KSC5386

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5386 DESCRIPTION ·High Collector-Base Voltage: VCBO = 1500V(Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 16 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN KSC5386 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 4 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; RBE= 0 1 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 250 mA hFE DC Current Gain IC= 1A; VCE= 5V 8 VECF C-E Diode Forward Voltage IF= 6A IC= 4A; IB1= 0.8A; IB2= -1.6A; VCC= 200V 2.0 V tf Fall Time 0.2 μs isc Website：www.iscsemi.cn 2