KSD363

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD363 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 300V(Min) ·Collector Current- IC= 6A ·Collector Power Dissipation: PC= 40W@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 6 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. KSD363 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA ; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.5 V ICBO Collector Cutoff Current VCB= 250V; IE= 0 1 mA hFE DC Current Gain IC= 1A; VCE= 5V 40 240 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 10 MHz hFE Classifications R 40-80 O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2