KSD401

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD401 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546 APPLICATIONS ·Designed for TV Vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 2 A PC 25 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. KSD401 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 150 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.5mA ; IE= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 5 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 50 μA hFE DC Current Gain IC= 0.4A; VCE= 10V 40 400 fT Current-Gain—Bandwidth Product IC= 0.4A; VCE= 10V 5 MHz hFE Classifications R 40-80 O 70-140 Y 120-240 G 200-400 isc Website：www.iscsemi.cn 2