KSD5018

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018 DESCRIPTION ·High Breakdown Voltage: V(BR)CEO= 275V(Min) ·Built-in Resistor Between Base and Emitter ·Wide Area of Safe Operation APPLICATIONS ·Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 0.5 A PC 40 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCER VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 1mA; RBE= 330Ω IC= 1.5A; IB1= 0.05A;Clamped IC= 2A; IB= 5mA B KSD5018 MIN 600 275 TYP. MAX UNIT V V 1.5 1.5 2.0 1 1 1000 200 V V V mA mA IC= 3A; IB= 20mA B IC= 2A; IB= 5mA B VCE= 500V VEB= 10V; IC= 0 IC= 2A ; VCE= 2V IC= 4A ; VCE= 2V isc Website：www.iscsemi.cn 2