KSD5057

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5057 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 20 A PC 60 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN KSD5057 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) VBE(sat) ICBO ICES Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V μA Collector Cutoff Current VCB= 800V ; IE= 0 VCE= 1500V ; VBE= 0 10 Collector Cutoff Current 1 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 3 VECF C-E Diode Forward Voltage IF= 6A 2.0 V μs tf Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A 0.3 isc Website：www.iscsemi.cn 2