KTC3229

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KTC3229 DESCRIPTION ・With TO-220F package ・High voltage :VCEO=300V APPLICATIONS ・For color TV chroma output application PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature Ta=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 5 0.1 20 2 150 -55~150 UNIT V V V A mA W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA; IB=1mA VCB=240V; IE=0 VEB=5V; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V IC=20mA ; VCE=20V f=1MHz;VCB=20V 20 30 75 MIN KTC3229 TYP. MAX 1.0 1.0 1.0 UNIT V μA μA 200 MHz 4.0 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE KTC3229 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors KTC3229 4