MTP50N06V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor MTP50N06V FEATURES ·Drain Current –ID=42A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 60 ±20 42 147 125 150 -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.2 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MTP50N06V MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V Ω RDS(on) IGSS Drain-Source On-Resistance VGS= 10V; ID= 21A VGS= ±20V;VDS= 0 VDS= 60V; VGS=0 VDS= 60V; VGS=0; Tj= 150℃ IS= 42A; VGS=0 0.028 ±100 10 100 2.5 Gate-Body Leakage Current nA μA IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage V · isc Website：www.iscsemi.cn