S2000A1

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000A1 DESCRIPTION ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications PINNING(See Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION ABOSOLUTE MAXIMUM RATINGS (TC=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 8 15 4 125 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN S2000A1 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 IC=4.5A ;IB=2A 5 V VCE(sat) VBE(sat) ICBO Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage IC=4.5A ;IB=2.0A 1.5 V Collector cut-off current VCB=1500V; VBE=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 40 hFE-2 DC current gain IC=4.5A ; VCE=5V 4.5 9 COB fT Collector output capacitance IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 95 pF Transition frequency 2 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2000A1 Fig.2 outline dimensions 3