S2000AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI DESCRIPTION ・With TO-3P(H)IS package ・High voltage ・Fast switching APPLICATIONS ・Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 15 50 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN S2000AFI TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2.0A VCE=1500V; VBE=0 TC=125℃ VEB=5V; IC=0 1.3 1 2 1 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=5V;f=5MHz 7 MHz Switching times inductive load μs μs ts Storage time IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3μH 7 tf Fall time 0.55 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2000AFI Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3