S2000N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2000N DESCRIPTION ・With TO-3P(H)IS package ・High voltage,high speed ・Low collector saturation voltage APPLICATIONS ・Color TV horizontal output applications ・Color TV switching regulator applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 4 50 150 -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. S2000N MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=4.5A ;IB=2.0A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.2 V ICBO Collector cut-off current VCB=1500V; VBE=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=4.5A ; VCE=5V 4.5 9 COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF fT Transition frequency IC=0.1A ; VCE=10V 2 MHz Switching times μs μs ts Storage time ICP=4.5A;IB1(end)=1.0A fH=15.75kHz 8 12 tf Fall time 0.4 0.7 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2000N Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3