S2055F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2055F DESCRIPTION ・With TO-3P(H)IS package ・High voltage ,high speed ・Low collector saturation voltage ・Built-in damper diode APPLICATIONS ・Color TV horizontal output applications ・Color TV switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 4 125 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IB=100mA ; IB=0 IC=4.5A ;IB=1.0A IC=4.5A ;IB=1.0A VCB=1500V; VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 10 4.5 95 2 MIN 700 TYP. S2055F MAX UNIT V 5.0 1.2 1 300 30 9 V V mA mA pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2055F Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3