S2818A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor S2818A DESCRIPTION ·High Voltage ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-peak 7.5 A IBM Base Current-peak Collector Power Dissipation @ TC≤95℃ Junction Temperature 4 A PC 12.5 W Tj 115 ℃ Tstg Storage Temperature Range -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.6 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES hFE COB fT VECF PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product C-E Diode Forward Voltage CONDITIONS IC= 100mA; IB= 0; L= 25mH IE= 200mA; IC= 0 IC= 4.5A; IB= 2A IC= 4.5A; IB= 2A VCE= 1500V; VBE= 0 IC= 4.5A; VCE= 5V IE= 0; VCB= 10V; f= 1MHz IC= 0.1A; VCE= 5V IF= 5A 2.25 125 7 MIN 700 5 TYP S2818A MAX UNIT V V 1.0 1.5 1.0 V V mA pF MHz 2.0 V Switching Times ts tf Storage Time IC= 4.5A; IB(end)= 1.8A Fall Time 0.7 μs 10 μs isc Website：www.iscsemi.cn