STP75NF75

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor STP75NF75 FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage: VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max) DESCRIPTION Suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirements . APPLICATIONS ·Solenoid and relay drivers ·DC motor control ·DC-DC converters DC ·Automotive environment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 75 ±20 80 320 300 175 -55~175 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.5 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS STP75NF75 MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 75 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 40A 0.011 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 VDS= 75V; VGS= 0 VDS= 75V; VGS= 0; Tj= 125℃ IS= 80A; VGS=0 ±100 1 10 1.5 nA IDSS Zero Gate Voltage Drain Current μA VSD Forward On-Voltage V · isc Website：www.iscsemi.cn