4N26XG

4N25X, 4N26X, 4N27X, 4N28X 4N25, 4N26, 4N27, 4N28 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS z UL recognised, File No. E91231 Package Code " GG " 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead form : - STD z Dimensions in mm 2.54 7.0 6.0 1 2 6 5 3 4 1.2 - G form - SMD approved to CECC 00802 Certified to EN60950 by :Nemko - Certificate No. P01102464 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 DESCRIPTION The 4N25, 4N26, 4N27, 4N28 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z DC motor controllers z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Collector Current Power Dissipation 30V 70V 6V 50mA 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 17/7/08 DB91028 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 1.5 V IF = 10mA 10 μA VR = 6V 30 V IC = 1mA 70 6 50 V V nA IC = 100μA IE = 100μA VCE = 10V 0.5 % % V 10mA IF , 10V VCE 10mA IF , 10V VCE 50mA IF , 2mA IC VRMS VPK Ω See note 1 See note 1 VIO = 500V (note 1) μs μs VCC = 5V , IF= 10mA RL = 75Ω , ( FIG 1) Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) ( Note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) 4N25, 4N26 4N27, 4N28 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 20 10 5300 7500 5x1010 Input-output Isolation Resistance RISO Output Rise Time, tr Output Fall Time, tf Note 1 Note 2 TEST CONDITION 2 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 75Ω tr Output tf Output 10% 10% 90% 90% FIG 1 17/7/08 DB91028m-AAS/A5 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current Relative current transfer ratio Collector power dissipation PC (mW) 200 150 100 50 2.8 2.4 2.0 1.6 1.2 0.8 VCE = 0.5V TA = 25°C 0.4 0 0 -30 0 25 50 75 100 1 125 2 5 10 20 50 Forward current IF (mA) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 80 Relative current transfer ratio Forward current IF (mA) 70 60 50 40 30 20 10 1.4 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25°C 0.2 0 -30 0 25 50 75 100 125 1 Ambient temperature TA ( °C ) 1.0 0.5 0 0 25 50 75 Ambient temperature TA ( °C ) 17/7/08 100 Collector-emitter saturation voltage VCE(SAT) (V) Relative current transfer ratio IF = 10mA VCE = 10V -30 5 10 20 50 Forward current IF (mA) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 2 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.14 0.12 IF = 50mA IC = 2mA 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB91028m-AAS/A5