4N38

4N38X, 4N38AX 4N38, 4N38A OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS UL recognised, File No. E91231 Package Code " GG " 2.54 7.0 6.0 1.2 7.62 6.62 Dimensions in mm 1 2 3 6 5 4 'X' SPECIFICATIONAPPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 Certified to EN60950 by :Nemko - Certificate No. P01102464 3.0 7.62 4.0 3.0 0.5 13° Max 0.26 0.5 3.35 DESCRIPTION The 4N38, 4N38A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. High BVCEO (80V min) High Isolation Voltage (5.3kVRMS ,7.5kVPK ) All electrical parameters 100% tested Custom electrical selections available APPLICATIONS DC motor controllers Industrial systems controllers Measuring instruments Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT OPTION G ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Collector Current Power Dissipation POWER DISSIPATION 80V 80V 6V 50mA 160mW 60mA 6V 105mW 7.62 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 17/7/08 DB90047 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Collector-base Dark Current (ICBO) Current Transfer Ratio (CTR) Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 80 80 6 50 20 20 1.0 MIN TYP MAX UNITS 1.2 1.5 10 V μA V V V nA nA % V VRMS VPK Ω 2 2 μs μs TEST CONDITION IF = 10mA VR = 6V IC = 1mA IC = 100μA IE = 100μA VCE = 60V VCE = 60V 10mA IF , 10V VCE 20mA IF , 4mA IC See note 1 See note 1 Coupled Input-output Isolation Resistance RISO 5x1010 Response Time (rise) Response Time (fall) Note 1 Note 2 VIO = 500V (note 1) VCC = 5V , IF= 10mA, RL = 75Ω (FIG 1) Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input RL = 75Ω Output Output 10% tr tf ton toff 10% 90% 90% FIG 1 17/7/08 DB90047m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Relative current transfer ratio Relative Current Transfer Ratio vs. Forward Current 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 1 2 VCE = 1V TA = 25°C 5 10 20 50 150 100 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 80 70 Relative current transfer ratio Forward current IF (mA) Forward current IF (mA) Relative Current Transfer Ratio vs. Forward Current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 5 VCE = 10V TA = 25°C 60 50 40 30 20 10 -30 0 25 50 75 100 125 10 20 50 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Forward current IF (mA) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB90047m-AAS/A3 IF = 10mA VCE = 10V Collector-emitter saturation voltage VCE(SAT) (V) Relative current transfer ratio IF = 20mA IC = 4mA 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 17/7/08