CNX83AG

CNX83AG OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 2.54 7.0 6.0 1.2 Dimensions in mm 1 2 3 7.62 4.0 3.0 0.5 0.26 6 5 4 'X' SPECIFICATION APPROVALS l VDE 0884 approval pending l EN60950 approval pending 7.62 6.62 DESCRIPTION The CNX83AG optically coupled isolator consists of an infrared light emitting diode and a NPN silicon photo transistor in a standard 6 pin dual in line plastic package. 3.0 0.5 3.35 10.16 FEATURES l High Current Transfer Ratio (40% min) l Low Saturation Voltage suitable for TTL integrated circuits l High BVCEO (50V min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 60mA 6V 105mW 50V 70V 6V 160mW Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 13/12/00 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92513-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) ( Note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (IC / IF ) (Note 2) MIN TYP MAX UNITS 1.2 6 10 50 70 6 50 1.5 V V µA V V V nA TEST CONDITION IF = 10mA I R = 1 0 µA VR = 6 V IC = 1mA IC = 100µA IE = 100µA VCE = 10V 10mA IF , 0.4V VCE 10mA IF , 5V VCE 0.4 5300 7500 5x1010 3 3 12 12 V VRMS VPK Ω µs µs µs µs Output Coupled 0.4 1.5 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Turn-on Time Turn-off Time Turn-on Time Turn-off Time ton toff ton toff 10mA IF , 4mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 5V , IC = 2mA , RL = 100Ω VCC = 5V , IC = 2mA , RL = 1kΩ Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. 13/12/00 DB92513-AAS/A1 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) Collector Current vs. Collector-emitter Voltage 50 TA = 25°C 50 30 20 15 20 10 0 10 IF = 5mA 150 Collector current I C (mA) 40 30 100 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) (V) Forward Current vs. Ambient Temperature 80 70 Forward current I F (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Relative current transfer ratio 0 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Forward Current 2.8 Relative current transfer ratio IF = 10mA IC = 4mA IF = 10mA VCE = 0.4V Collector-emitter saturation voltage V CE(SAT) 2.4 2.0 1.6 1.2 0.8 0.4 0 1 2 VCE = 0.4V TA = 25°C 5 10 20 50 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 Forward current IF (mA) DB92513-AAS/A1 13/12/00