IS121

IS121 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS121 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES l l l l l Dimensions in mm Marked as FPT1. Current Transfer Ratio MIN. 50% Isolation Voltage (3.75kVRMS ,5.3kVPK ) All electrical parameters 100% tested Drop in replacement for Toshiba TLP121 APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 22/4/02 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92843l-AAS/A3 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation (derate linearly 2.26mW/°C above 25°C) 35V 6V 150mW 170mW ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) Optional CTR Grades: IS121A IS121B IS121C IS121D MIN TYP MAX UNITS 1.2 4 10 35 6 100 50 80 130 200 300 TEST CONDITION IF = 20mA IR = 10µA VR = 4V IC = 0.1mA I E = 1 0 µA VCE = 20V 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 20mA IF , 1mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω 1.4 V V µA V V nA % % % % % Output 600 160 260 400 600 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 3750 5300 0.2 V VRMS VPK Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 4 3 18 18 Ω µs µs Measured with input leads shorted together and output leads shorted together. 22/4/02 DB92843l-AAS/A3 TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 ) 12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1 CHARACTERISTIC CURVES Fig.1 Forword Current vs. Ambient Temperatute 60 50 40 30 20 10 0 -55 Fig.2 Collector Power Dissiption vs. Ambient Temperature 200 Collector Power dissipation Pc (mW) 0 25 50 75 100 o F (mA) 150 Forward current I 100 50 125 0 -55 0 25 50 75 100 o 125 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 1mA 3mA 5mA 7mA 6 Fig.4 Forward Current vs. Forward Voltage O Ic=0.5mA Collecotr-emitter saturation voltage VCE (sat) (V) Ta= 25 C F (mA) 500 200 100 50 20 10 5 2 Ta= 75 C 50 C o o 5 4 3 2 1 0 25 C 0C -25 C o o o Forward current I 1 0 5 10 15 0 0.5 1.0 1.5 2.0 2.5 3.0 Forward current I F (mA) Forward voltage V F (V) Fig.5 Current Transfer Ratio vs. Forward Current 200 180 Fig.6 Collector Current vs. Collector-emitter Voltage 50 Current transfer ratio CTR (%) VCE= 5V Ta= 25 C o I F = 30mA 25mA Ta= 25 C o 140 120 100 80 60 40 20 0 1 2 5 10 20 50 Collector current Ic (mA) 160 40 20mA 30 15mA 20 10mA 10 5mA 0 0 1 2 3 4 5 6 7 8 9 Pc(MAX.) Forward current I F (mA) Collector-emitter voltage V CE (V) 12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1 CHARACTERISTIC CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 150 Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.10 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) I F = 5mA VCE= 2V I F = 20mA I C = 1mA 0.08 100 0.06 0.04 50 0.02 0 20 40 60 80 o 0 100 20 40 60 80 o 100 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 10000 Fig.10 Response Time vs. Load Resistance 500 200 100 (nA) VCE= 20V CEO VCE = 2V I C = 2mA Ta= 25 C o Response time ( s) 1000 50 20 10 5 2 1 0.5 ts tr tf td Collector dark current I 100 10 1 20 40 60 80 o 100 0.2 0.05 0.1 0.2 0.5 1 2 5 10 Ambient temperature Ta ( C) Load resistance R L ( k ) Fig.11 Frequency Response Test Circuit for Response Time Vcc Input Output Input Output 10% 90% td ts tr tf 0 VCE= 2V I C = 2mA Ta= 25 C o RD RL Voltage gain Av (dB) 100 Ω 10 R L = 10k Ω 1k Ω Test Circuit for Frequency Response Vcc 20 RD 2 5 10 20 50 100 500 RL Output 0.5 1 Frequency f (kHz) 12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1 TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 230 C 200 C 180 C 1 minute 25 C 2 minutes 1.5 minutes 1 minute (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1