IS725

IS725 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 DESCRIPTION The IS725 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (300V min.) l Low collector dark current :1µA max. at 200V VCE l Low input current 1mA IF APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances 2.54 7.0 6.0 1.2 7.62 6.62 1 2 3 Dimensions in mm 6 5 4 7.62 4.0 3.0 0.5 13° Max 0.26 3.0 0.5 3.35 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-baseVoltage BVECO Collector Current IC Power Dissipation 300V 300V 6V 150mA 300mW 50mA 6V 70mW OPTION SM SURFACE MOUNT OPTION G 7.62 POWER DISSIPATION Total Power Dissipation 350mW 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 7/12/00 DB91065m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO ) Collector-base Breakdown (BVCBO ) Emitter-base Breakdown (BVEBO ) Collector-emitter Dark Current (ICEO ) MIN TYP MAX UNITS 1.2 6 10 300 300 6 1 1.4 V V µA V V V µA TEST CONDITION IF = 10mA I R = 1 0 µA VR = 6 V IC = 1mA IC = 0.1mA IE = 0.1mA VCE = 200V Output Coupled Current Transfer Ratio (CTR) 1000 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 4000 1.2 % V VRMS VPK 1mA IF , 2V VCE 20mA IF , 100mA IC See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz VCE = 2V, IC= 20mA, RL = 100Ω, RBE= open VCE = 2V, IC= 20mA, RL = 100Ω, RBE= open Input-output Isolation Resistance RISO 5x1010 Input-output Capacitance Cf Cut-off frequency fc 1 1 Ω pF kHz µs µs Output Rise Time Output Fall Time Note 1 Note 2 tr tf 300 100 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC Input 100Ω IC = 20mA Output ton tr Input Output 10% 90% 10% 90% toff tf 7/12/00 D B91065m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature 400 Collector power dissipation P C (mW) 140 Collector current I C (mA) 300 120 Collector Current vs. Collector-emitter Voltage 10mA 4mA 2mA 100 80 60 40 20 IF = 0.5mA 0 0.4 0.8 1.2 1.6 2.0 1mA 200 100 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 60 Relative current transfer ratio 50 Forward current I F (mA) 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0 Collector-emitter voltage VCE ( V ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 IF = 1mA VCE= 2V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) Collector Dark Current vs. Ambient Temperature 10-5 Collector dark current I CEO (A) VCE= 200V 100 CE(SAT) (V) Collector-emitter saturation voltage V 1.2 1.0 0.8 0.6 0.4 0.2 0 -30 10-6 10-7 10-8 10-9 10-10 10-11 IF = 20mA IC = 100mA 0 25 50 75 100 -30 0 25 50 75 100 Ambient temperature TA ( °C ) 7/12/00 Ambient temperature TA ( °C ) D B91065m-AAS/A1