ISQ2X

ISD2 ISQ2 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 2.54 DESCRIPTION The IS*2 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z Current Transfer Ratio (100% to 150%) z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High BVCEO (70V min) Dimensions in mm ISD2 7.0 6.0 1 8 2 3 7 6 5 4 1.2 10.16 9.16 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 0.26 3.35 ISQ2 2.54 APPLICATIONS z Computer terminals z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION SM 7.0 6.0 1.2 20.32 19.32 10.2 9.5 3 14 4 13 5 12 6 11 7 10 9 7.62 4.0 3.0 7.62 1.4 0.9 15 13° Max 0.5 3.0 1.2 0.6 16 2 8 OPTION G SURFACE MOUNT 1 0.5 3.35 0.26 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 30/10/14 DB92786m-AAS/A3 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 125°C Operating Temperature -25°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current Power Dissipation 70V 6V 50mA 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output IF = 50mA 10 μA VR = 4V V IC = 1mA Emitter-collector Breakdown (BVECO) 6 V IE = 10μA 100 nA VCE = 20V 500 % 10mA IF , 10V VCE % 10mA IF , 0.4V VCE Current Transfer Ratio (CTR) (Note 2) 100 170 Input to Output Isolation Voltage VISO Input to Output Isolation Voltage VISO 5300 7500 VRMS VPK See note 1 See note 1 Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1) μs μs IC = 2mA VCE = 2V, RL = 100Ω Rise Time, tr Fall Time, tf 30/10/14 V 70 Saturated Current Transfer Ratio Note 1 Note 2 1.65 Collector-emitter Breakdown (BVCEO) Collector-emitter Dark Current (ICEO) Coupled TEST CONDITION 4 3 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92786m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio Collector power dissipation PC (mW) 200 150 100 50 1.5 IF = 10mA VCE = 0.4V 1.0 0.5 0 0 -30 0 25 50 75 100 -30 125 0 25 50 75 Ambient temperature TA ( °C ) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 100 60 Relative current transfer ratio Forward current IF (mA) 50 40 30 20 10 2.8 2.4 2.0 1.6 1.2 0.8 VCE = 0.4V TA = 25°C 0.4 0 0 -30 0 25 50 75 100 125 1 10 20 50 Relative Current Transfer Ratio vs. Forward Current IF = 10mA VCE = 10V Relative current transfer ratio Relative current transfer ratio Relative Current Transfer Ratio vs. Ambient Temperature 1.0 0.5 0 1.4 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25°C 0.2 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 30/10/14 5 Forward current IF (mA) Ambient temperature TA ( °C ) 1.5 2 100 1 2 5 10 20 50 Forward current IF (mA) DB92786m-AAS/A3