MOC8021

MOC8020, MOC8021 NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l 2.54 7.0 6.0 1.2 7.62 6.62 1 2 3 Dimensions in mm 6 5 4 UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION The MOC8020, MOC8021 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a standard 6pin dual in line plastic package with the base pin unconnected. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio (500% min) l BVceo 35V l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Base pin unconnected for improved noise immunity in high EMI environment l High sensitivity to low input drive current l Custom electrical selections available APPLICATIONS Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances l 7.62 4.0 3.0 0.5 13° Max 0.26 3.0 0.5 3.35 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 125°C Operating Temperature -25°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 35V 6V 150mW 50mA 6V 70mW OPTION SM SURFACE MOUNT OPTION G 7.62 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 Total Power Dissipation 170mW (derate linearly 3.3mW/°C above 25°C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 28/3/03 DB92152m-AAS/A5 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Output Collector Current ( IC )(Note 2) MOC8020 MOC8021 35 6 10-6 MIN TYP MAX UNITS 1.2 1.4 10 V µA TEST CONDITION IF = 10mA VR = 4V IC = 0.1mA I E = 1 0 µA VCE = 10V V V Α 50 100 mA mA 10mA IF , 5V VCE 10mA IF , 5V VCE Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Response Time (Rise), tr Response Time (Fall), tf 5300 7500 1011 VRMS VPK Ω µs µs (note 1) (note 1) VIO = 500V (note 1) VCE= 2V, IC= 10mA, RL = 100Ω , fig.1 60 53 Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 28/3/03 DB92152m-AAS/A5 Fig.1 Forward Current vs. Ambient Temperature 60 Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc (mW) 200 Forward current I F (mA) 50 40 30 20 10 0 -25 150 100 50 0 25 50 75 100 o 125 0 -25 0 25 50 75 100 o 125 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Current Transfer Ratio vs. Forward Current 3500 VCE= 2V Fig.4 Forward Current vs. Forward Voltage 100 o Current transfer ratio CTR (%) 3000 2500 2000 1500 1000 500 0 0.1 1 1 Forward current IF (mA) 10 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 Forward voltage (V) Forward current (mA) 100 C 80 C 60 C 10 o o 40 C 20 C o o Fig.5 Collector Current vs. Collector-emitter Voltage 60 PC(MAX.) Fig.6 Collector Current vs. Collector-emitter Voltage 100 90 PC(MAX.) I F= 5mA Collector current Ic (mA) Collector current Ic (mA) 50 40 30 20 10 0 0 2 4 6 8 10 I F= 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.2mA 0.3mA 0.4mA 0.1mA 80 70 60 50 40 30 20 10 0 0 2mA 1mA 1 2 3 4 5 Collector-emitter voltage Vce (V) Collector-emitter voltage Vce (V) 28/03/03 DB92152m-AAS/A5 Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 1.0 Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 1.00 0.80 0.60 0.40 0.20 0.00 I F= 20mA Ic= 5mA Relative current transfer ratio (%) I F= 1mA VCE= 2V 0.8 0.6 0.4 0.2 0 20 40 60 80 O 100 20 40 60 80 O 100 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 10.00 Fig.10 Response Time vs. Load Resistance 5 2 3 10 5 2 2 10 5 2 10 5 2 0 10 Collector dark current I CEO (nA) VCE= 10V VCE= 2V I C= 10mA tf tr 1.00 0.10 Response time ( s) td ts 0.1 1 10 0.01 20 40 60 80 O 100 Ambient temperature Ta ( C) Load resistance RL (k ) Fig.11 Frequency Response Test Circuit for Response Time Input Output Output td tr ts tf VCE= 2V I C= 2mA Voltage gain Av (dB) 0 Vcc Input RD RL 10% 90% Test Circuit for Frequency Response -10 RL= 10k 1k 100 RD Vcc RL Output -20 0.1 1 10 100 Frequency f (kHz) 28/03/03 DB92152m-AAS/A5