MOC8113

MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l BSI approved - Certificate No. 8001 DESCRIPTION The MOC8111, MOC8112, MOC8113 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Base pin unconnected for improved noise immunity in high EMI environment l 2.54 7.0 6.0 1.2 7.62 6.62 1 2 3 Dimensions in mm 6 5 4 7.62 4.0 3.0 0.5 13° Max 0.26 3.0 0.5 3.35 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 0.6 0.1 10.46 9.86 OPTION SM SURFACE MOUNT OPTION G 30V 6V 160mW 7.62 1.25 0.75 0.26 10.16 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 31/3/03 DB92197m-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Output Collector Current ( IC ) MOC8111 MOC8112 MOC8113 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Response Time (Rise), tr Response Time (Fall), tf 2 2 30 6 50 MIN TYP MAX UNITS 1.15 1.5 10 V µA TEST CONDITION IF = 10mA VR = 6V IC = 1mA IE = 100µA VCE = 10V 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 0.5mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 5V , IF = 10mA RL = 75Ω (FIG 1) V V nA Coupled 2 5 10 0.15 0.4 mA mA mA V VRMS VPK Ω µs µs Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE1 31/3/03 DB92197m-AAS/A2 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Collector Current vs. Collector-emitter Voltage 50 TA = 25°C 50 30 20 15 20 10 0 10 IF = 5mA 150 Collector current IC (mA) 40 30 100 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 80 Current transfer ratio CTR (%) 70 Forward current IF (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 0 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 280 240 200 160 120 80 40 0 1 2 5 10 20 50 Forward current IF (mA) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB92197m-AAS/A2 VCE = 10V TA = 25°C MOC8113 MOC8112 MOC8111 Collector-emitter saturation voltage VCE(SAT) (V) Relative current transfer ratio IF = 10mA VCE = 10V IF = 10mA IC = 0.5mA 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 31/3/03