MOCD217

MOCD217 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD217 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package. FEATURES Super Small Outline Low Input Current CTR 100% HighIsolationVoltage (3750VRMS ) All electrical parameters 100% tested Custom electrical selections available APPLICATIONS IFeedback Control Circuits Interfacing and coupling systems of different potentials and impedances General Purpose Switching Circuits Monitor and Detection Circuits ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 DC93137 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature Operating Temperature -55°C to + 150°C -55°C to + 110°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 90mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current Power Dissipation 80V 7V 50mA 150mW POWER DISSIPATION Total Power Dissipation 250mW ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 1.5 V IF = 10mA 100 μA VR = 6V Collector-emitter Breakdown (BVCEO) 80 V IC = 0.1mA Emitter-collector Breakdown (BVECO) 7 V IE = 100μA nA VCE = 10V % 1mAIF ,5V VCE V 10mAIF, 2.4mAIC VRMS See note 1 Ω VIO = 500VDC (note 1) μs μs VCC = 5V , IC=2mA,RL=100Ω Reverse Current (IR) Output Collector-emitter Dark Current (ICEO) Coupled TEST CONDITION Current Transfer Ratio (CTR) 50 100 130 Collector-Emitter Saturation Voltage 0.4 Input to Output Isolation Voltage VISO 3750 Input-output Isolation Resistance RISO Output Rise Time Output Fall Time (tr) (tf) 1011 1.6 2.2 18 Note 1 Measured with input leads shorted together and output leads shorted together. 8/5/09 DC93134