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PS2502-4

PS2502-4

  • 厂商:

    ISOCOM(英国安数)

  • 封装:

  • 描述:

    PS2502-4 - HIGH DENSITY MOUNTING PHOTODARLINGTON OPTICALLY COUPLED ISOLATORS - ISOCOM COMPONENTS

  • 数据手册
  • 价格&库存
PS2502-4 数据手册
PS2502-1X, PS2502-2X, PS2502-4X PS2502-1, PS2502-2, PS2502-4 HIGH DENSITY MOUNTING PHOTODARLINGTON OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P01102465 Fimko - Certificate No. FI18162 Semko - Reference No. 0202041/01-25 Demko - Certificate No. 311161-01 l PS2502-1X PS2502-1 2.54 7.0 6.0 Dimensions in mm 1 2 4 3 1.2 5.08 4.08 7.62 4.0 3.0 0.5 3.0 0.26 0.5 2.54 7.0 6.0 1.2 10.16 9.16 7.62 4.0 3.0 0.5 3.0 3.35 0.5 1 2 3 4 5 7.0 6.0 1.2 20.32 19.32 4.0 3.0 0.5 3.0 0.5 3.35 0.26 6 7 8 7.62 13° Max 0.26 16 15 14 13 12 11 10 9 13° Max 3.35 13° Max BSI approved - Certificate No. 8001 DESCRIPTION The PS2502-1, PS2502-2, PS2502-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photodarlingtons in space efficient dual in line plastic packages. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio (200%min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT OPTION G PS2502-2X PS2502-2 1 2 3 4 8 7 6 5 PS2502-4X PS2502-4 2.54 7.62 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 30/4/03 DB92306m-AAS/A8 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) ( Note 2 ) 40V 6V 150mW MIN TYP MAX UNITS 1.2 1.4 10 40 6 V µA TEST CONDITION IF = 10mA VR = 4V IC = 0.5mA IE = 100µA V V Emitter-collector Breakdown (BVECO) Coupled Current Transfer Ratio (CTR) (Note 2) 200 2000 % 1mA IF , 2V VCE Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 5300 7500 1.0 V VRMS VPK Ω µs µs 1mA IF , 2mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 10mA, RL= 100Ω Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time tr tf 60 53 300 250 Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. 30/4/03 DB92306m-AAS/A8 Collector Power Dissipation vs. Ambient Temperature =1mA 200 Collector power dissipation PC (mW) Collector-emitter saturation voltage VCE(SAT) (V) 6 5 4 3 2 1 0 0 Collector-emitter Saturation Voltage vs. Forward Current 30mA 50mA 1.5 5mA 150 100 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 60 Ic TA = 25°C 0.5 1.0 2.0 2.5 3.0 Forward current IF (mA) Collector Current vs. Collector-emitter Voltage 100 10mA TA = 25°C 50 Forward current IF (mA) Collector current IC (mA) 80 60 2mA 40 IF = 1mA 20 0 -30 0 25 50 75 100 125 0 1 2 3 4 5 Ambient temperature TA ( °C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 1.2 1.0 0.8 0.6 0.4 0.2 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) 30/4/03 40 30 20 10 0 5mA Collector-emitter voltage VCE ( V ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Collector-emitter saturation voltage VCE(SAT) (V) Relative current transfer ratio IF = 1mA IC = 2mA IF = 1mA VCE = 2V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 D B92306m-AAS/A8
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