TLP521X

厂商：
ISOCOM(英国安数光)
封装：
DIP-4
描述：
OPTOISO 5.3KV TRANS 4DIP

数据手册：

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详情介绍
数据手册
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TLP521X 数据手册

TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4 TLP521XGB, TLP521-2XGB, TLP521-4XGB TLP521X, TLP521-2X, TLP521-4X HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l TLP521 2.54 7.0 6.0 1.2 5.08 4.08 1 2 Dimensions in mm 4 3 7.62 4.0 3.0 0.5 13° Max 0.26 BSI approved - Certificate No. 8001 DESCRIPTION The TLP521, TLP521-2, TLP521-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio ( 50% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO ( 55Vmin ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT OPTION G 3.0 TLP521-2 0.5 2.54 3.35 1 7.0 6.0 2 3 4 7.62 4.0 3.0 0.5 8 7 6 5 1.2 10.16 9.16 3.0 3.35 0.5 13° Max 0.26 1 2 3 4 5 7.0 6.0 6 7 8 7.62 13° Max 0.26 16 15 14 13 12 11 10 9 TLP521-4 2.54 7.62 1.2 20.32 19.32 4.0 3.0 0.5 0.5 3.35 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/4/03 DB92546m-AAS/A3 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation (derate linearly 2.67mW/ °C above 25°C) 55V 6V 150mW 200mW ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) 55 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) TLP521, TLP521-2, TLP521-4 CTR selection available BL GB GB Collector-emitter Saturation VoltageVCE (SAT) -GB Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Response Time (Rise), tr Response Time (Fall), tf 5300 7500 5x1010 4 3 50 200 100 30 MIN TYP MAX UNITS 1.0 1.15 1.3 10 V µA TEST CONDITION IF = 10mA VR = 4V IC = 0.5mA IE = 100µA VCE = 20V 5mA IF , 5V VCE 1mA IF , 0.4V VCE 8mA IF , 2.4mA IC 1mA IF , 0.2mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω V V nA 100 Coupled 600 600 600 % % % % V V VRMS VPK Ω µs µs 0.4 0.4 Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. 7/4/03 D B92546m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) 25 Collector current IC (mA) 150 20 15 10 5 0 -30 0 25 50 75 100 125 0 Collector Current vs. Low Collector-emitter Voltage TA = 25°C 50 40 30 20 10 5 IF = 2mA 100 50 0 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 60 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE ( V ) Collector Current vs. Collector-emitter Voltage 50 50 30 Collector current IC (mA) 40 30 20 10 0 20 15 10 TA = 25°C 50 Forward current IF (mA) 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 IF = 5mA IC = 1mA Current transfer ratio CTR (%) 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) 7/4/03 IF = 5mA 0 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 280 240 200 160 120 80 40 0 1 2 5 10 20 50 Forward current IF (mA) D B92546m-AAS/A3 Collector-emitter saturation voltage VCE(SAT) (V) VCE = 5V TA = 25°C

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TLP521X

1. 物料型号： - TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4, TLP521XGB, TLP521-2XGB, TLP521-4XGB, TLP521X, TLP521-2X, TLP521-4X。

2. 器件简介： - TLP521、TLP521-2、TLP521-4系列光耦隔离器由红外发光二极管和NPN硅光电晶体管组成，采用空间效率高的双列直插塑料封装。

3. 引脚分配： - 10mm引脚间距：在型号后加G。 - 表面贴装：在型号后加SM。 - 卷带包装：在型号后加SMT&R。

4. 参数特性： - 高电流传输比（最小50%）。 - 高隔离电压（5.3 kV RMS, 7.5 kV PK）。 - 高击穿电压（BVCEO 55V最小）。 - 所有电气参数100%测试。 - 可提供定制电气选项。

5. 功能详解： - 光耦隔离器用于电气隔离，保护电路不受高压冲击。 - 具有高电流传输比和高隔离电压，保证信号传输的可靠性和安全性。

6. 应用信息： - 计算机终端。 - 工业系统控制器。 - 测量仪器。 - 不同电位和阻抗系统间的信号传输。

7. 封装信息： - ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified)： - 存储温度：-55°C至+125°C。 - 工作温度：-30°C至+100°C。 - 引脚焊接温度（距离外壳1/16英寸处10秒）：260°C。

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