TLP626

TLP626, TLP626-2,TLP626-4 LOW INPUT CURRENT A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 DESCRIPTION The TLP626, TLP626-2, TLP626-4 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l Low input current ± 0.5mA IF l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l AC or polarity insensitive input l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Telephone sets, Telephone exchangers l Signal transmission between systems of different potentials and impedances TLP626 2.54 7.0 6.0 1.2 5.08 4.08 1 2 Dimensions in mm 4 3 7.62 4.0 3.0 0.5 13° Max 0.26 3.0 0.5 3.35 TLP626-2 2.54 1 7.0 6.0 2 3 4 7.62 4.0 3.0 0.5 13° Max 0.26 1 2 16 15 14 13 12 11 10 9 7.62 8 7 6 5 1.2 10.16 9.16 3.0 0.5 3.35 TLP626-4 2.54 3 4 5 7.0 6.0 6 7 8 20.32 19.32 4.0 3.0 0.5 OPTION SM SURFACE MOUNT OPTION G 7.62 1.2 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 3.0 0.5 3.35 13° Max 0.26 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92549m-AAS /A1 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Power Dissipation ± 50mA 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) MIN TYP MAX UNITS 1.0 1.15 1.3 V TEST CONDITION IF = ± 10mA 55V 6V 150mW Output Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) Low Input CTR 55 6 100 100 50 V V nA IC = 0.5mA IE = 100µA VCE = 24V ± 1mAIF , 0.5V VCE ± 0.5mAIF,1.5V VCE ± 1mAIF , 0.5mAIC ± 1mAIF , 1mAIC See note 1 See note 1 VIO = 500V (note 1) VCC = 10V , IC= 2mA, RL= 100Ω Coupled 1200 % % Collector-emitter Saturation VoltageVCE (SAT) 0.2 0.4 V V Input to Output Isolation Voltage VISO 5300 7500 VRMS VPK Ω Input-output Isolation Resistance RISO 5x1010 Rise Time Fall Time Turn-on Time Turn-off Time tr tf ton toff 8 8 10 8 µs µs µs µs Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. 7/12/00 D B92549m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) 1.5 150 Relative current transfer ratio Relative Current Transfer Ratio vs. Ambient Temperature IF = ± 0.5mA VCE = 1.5V 1.0 100 0.5 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 60 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Forward Current 2.8 Relative current transfer ratio Forward current I F (±mA) 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1 0.2 VCE = 1.5V TA = 25°C 0.5 1.0 2 5 Forward current IF (±mA) Relative Current Transfer Ratio vs. Forward Current 2.8 Relative current transfer ratio 2.4 2.0 1.6 1.2 0.8 0.4 VCE = 0.5V TA = 25°C Relative current transfer ratio IF = ±1mA VCE = 0.5V 1.0 0.5 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) 7/12/00 0 0.1 0.2 0.5 1.0 2 5 Forward current IF (±mA) D B92549m-AAS/A1