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IS21ES32G-JQLI

IS21ES32G-JQLI

  • 厂商:

    ISSI(芯成半导体)

  • 封装:

    LBGA-100

  • 描述:

    IC FLASH 256GBIT EMMC 100LFBGA

  • 数据手册
  • 价格&库存
IS21ES32G-JQLI 数据手册
IS21ES08G/16G/32G/64G IS22ES08G/16G/32G/64G 8GB/16GB/32GB/64GB eMMC With eMMC 5.0 Interface PRELIMINARY DATA SHEET IS21/22ES04G/08G/16G/32G/64G 8GB/16GB/32GB/64GB eMMC with eMMC 5.0 Interface PRELIMINARY INFORMATION FEATURES • Packaged NAND flash memory with eMMC 5.0 interface • • • • IS21/22ES08G: 8Gigabyte IS21/22ES16G: 16Gigabyte IS21/22ES32G: 32Gigabyte IS21/22ES64G: 64Gigabyte • • • • • • • • • • • • • • • • Compliant with eMMC Specification Ver.4.4, 4.41,4.5,5.0 Bus mode High-speed eMMC protocol Clock frequency: 0-200MHz. Ten-wire bus (clock, 1 bit command, 8 bit data bus) and a hardware reset. Supports three different data bus widths : 1 bit(default), 4 bits, 8 bits Data transfer rate: up to 52Mbyte/s (using 8 parallel data lines at 52 MHz) Single data rate : up to 200Mbyte/s @ 200MHz (HS200) Dual data rate : up to 400Mbyte/s @ 200MHz (HS400) Operating voltage range : VCCQ = 1.8 V/3.3 V VCC = 3.3 V Supports Enhanced Mode where the device can be configured as pseudo-SLC (pSLC) for higher read/write performance, endurance, and reliability. Error free memory access Internal error correction code (ECC) to protect data communication Internal enhanced data management algorithm Solid protection from sudden power failure, safe-update operations for data content Security Support secure bad block erase and trim commands Enhanced write protection with permanent and partial protection options Field Firmware Update(FFU) Boot Partition and RPMB Partition Enhanced Device Life time Pre EOL information Production State Awareness Power Off Notification for Sleep Temperature range Industrial Grade : -40 ℃ ~ 85 ℃ Automotive Grade (A1): -40 ℃ ~ 85 ℃ Quality RoHS compliant (for detailed RoHS declaration, please contact your representative.) Package 153 FBGA (11.5mm x 13mm x 1.0mm) 100 FBGA (14.0mm x 18.0mm x 1.4mm) Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 2 IS21/22ES08G/16G/32G/64G GENERAL DESCRIPTION ISSI eMMC products follow the JEDEC eMMC 5.0 standard. It is ideal for embedded storage solutions for Industrial application and automotive application, which require high performance across a wide range of operating temperatures. eMMC encloses the MLC NAND and eMMC controller inside as one JEDEC standard package, providing a standard interface to the host. The eMMC controller directly manages NAND flash, including ECC, wear-leveling, IOPS optimization and read sensing. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 3 IS21/22ES08G/16G/32G/64G TABLE OF CONTENTS FEATURES............................................................................................................................................................ 2 GENERAL DESCRIPTION .................................................................................................................................... 3 TABLE OF CONTENTS ........................................................................................................................................ 4 1. PERFORMANCE SUMMARY ........................................................................................................................ 6 1.1 SYSTEM PERFORMANCE ...................................................................................................................... 6 1.2 POWER CONSUMPTION ......................................................................................................................... 6 1.3 BOOT PARTITION AND RPMB (REPLAY PROTECTED MEMORY BLOCK) ...................................... 6 1.4 USER DENSITY ........................................................................................................................................ 7 2. PIN CONFIGURATION .................................................................................................................................. 8 3. PIN DESCRIPTIONS ................................................................................................................................... 10 4. eMMC Device and System ........................................................................................................................... 11 5. REGISTER SETTINGS ................................................................................................................................ 12 5.1 OCR Register ............................................................................................................................................... 12 5.2 CID Register ........................................................................................................................................... 12 5.3 CSD Register ......................................................................................................................................... 13 5.4 Extended CSD Register ........................................................................................................................ 15 5.5 RCA Register ......................................................................................................................................... 21 5.6 DSR Register ......................................................................................................................................... 21 6. The eMMC BUS ........................................................................................................................................... 22 7. POWER-UP .................................................................................................................................................. 23 7.1 eMMC POWER-UP ................................................................................................................................. 23 7.2 eMMC POWER-CYCLING ...................................................................................................................... 24 8. ELECTRICAL CHARACTERISTICS ............................................................................................................ 25 8.1 ABSOLUTE MAXIMUM RATINGS (1) POWER CONSUMPTION .......................................................... 25 8.2 Operating Conditions ........................................................................................................................... 25 8.2.1 POWER SUPPLY: eMMC ...................................................................................................................... 26 8.2.2 eMMC Power Supply Voltage ............................................................................................................... 26 8.2.3 BUS SIGNAL LINE LOAD ...................................................................................................................... 27 8.2.4 HS400 REFERENCE LOAD ................................................................................................................... 28 8.3 BUS SIGNAL LEVELS ........................................................................................................................... 29 8.3.1 BUS SIGNAL LINE LOAD ...................................................................................................................... 29 8.3.2 PUSH-PULL MODE BUS SIGNAL LEVEL-eMMC ................................................................................ 29 8.3.3 BUS OPERATING CONDITIONS for HS200 & HS400 ......................................................................... 30 8.3.4 BUS DEVICE OUTPUT DRIVER REQUIREMENTS for HS200 & 400 ................................................. 30 8.4 BUS TIMING ........................................................................................................................................... 30 8.5 DEVICE INTERFACE TIMIMG ............................................................................................................... 31 Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 4 IS21/22ES08G/16G/32G/64G 8.6 BUS TIMING FOR DAT SIGNALS DURING DUAL DATA RATE OPERATION .................................. 33 8.6.1 DUAL DATA RATE INTERFACE TIMINGS ........................................................................................... 33 8.7 BUS TIMING SPECIFICATION IN HS400 MODE .................................................................................. 34 8.7.1 HS400 DEVICE OUTPUT TIMING ......................................................................................................... 35 The Data Strobe is used to read data in HS400 mode. The Data Strobe is toggled only during data read or CRC status response .............................................................................................................................................................. 35 9. 10. PACKAGE TYPE INFORMATION ............................................................................................................... 37 ORDERING INFORMATION – Valid Part Numbers ............................................................................... 39 Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 5 IS21/22ES08G/16G/32G/64G 1. PERFORMANCE SUMMARY 1.1 SYSTEM PERFORMANCE Typical value Product Sequential Read (MB/s) Sequential Write (MB/s) Random Read (IOPS) Random Write (IOPS) IS21/22ES08G 250 27.3 4866 1542 IS21/22ES16G 255 24.6 4972 1396 IS21/22ES32G 254 47.8 5012 1641 IS21/22ES64G 255 91.8 4991 1804 Notes: 1. Values given for an 8-bit bus width, running HS400 mode, VCC=3.3V, VCCQ=1.8V. 2. Performance numbers might be subject to changes without notice. 1.2 POWER CONSUMPTION Read (mA) Write (mA) Product Standby (mA) VCCQ(1.8V) VCC(3.3V) VCCQ(1.8V) VCC(3.3V) IS21/22ES08G 195 50 84 49 0.099 IS21/22ES16G 205 54 84 51 0.091 IS21/22ES32G 215 54 92 65 0.114 IS21/22ES64G 233 55 105 74 0.211 Notes: 1. Values given for an 8-bit bus width, a clock frequency of 200MHz DDR mode, VCC= 3.6V±5%, VCCQ=1.95V±5%. 2. Standby current is measured at Vcc=3.3V±5 %, VCCQ=1.8V±5%, 8-bit bus width without clock frequency. 3. Current numbers might be subject to changes without notice. 1.3 BOOT PARTITION AND RPMB (REPLAY PROTECTED MEMORY BLOCK) Density 8 GB 16 GB 32 GB 64 GB Boot partition 1 4096 KB 4096 KB 4096 KB 4096 KB Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 Boot partition 2 4096 KB 4096 KB 4096 KB 4096 KB RPMB 4096 KB 4096 KB 4096 KB 4096 KB 6 IS21/22ES08G/16G/32G/64G 1.4 USER DENSITY Total user density depends on device type. Note: 1. Products User Density IS21/22ES08G 7818182656 Bytes IS21/22ES16G 15636365312 Bytes IS21/22ES32G 31272730624 Bytes IS21/22ES64G 62545461248 Bytes Current numbers might be subject to changes without notice. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 7 IS21/22ES08G/16G/32G/64G 2. PIN CONFIGURATION 153 FBGA Top View (Ball Down) 3 4 DAT DAT DAT 0 1 DAT DAT 3 4 6 7 8 9 2 VSS NC NC NC DAT DAT DAT 5 6 7 NC NC NC NC 11 12 13 14 NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC VCC NC NC NC NC NC VSS NC NC NC NC NC NC DS VSS NC NC NC NC NC NC VSS VCC NC NC NC K NC NC NC NC NC NC NC L NC NC NC NC NC NC M NC NC NC N NC P NC NC 1 2 1 2 A NC NC B NC C NC I NC D NC NC NC E NC NC NC NC F NC NC NC G NC NC H NC J VDD 5 VSS VCC NC Q Q NC VCC VSS NC NC RST _n NC NC VSS VCC VCC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC 7 8 9 10 11 12 CMD VCC VSS Q Q VCC VSS VCC VSS Q Q Q Q 3 4 5 6 VSS Q CLK Q NC eMMC Note: 1. 10 SUPPLY GROUND 13 14 NC H5 (DS), A6 (VSS) and J5 (VSS) can be left floating if HS400 mode is not used. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 8 IS21/22ES08G/16G/32G/64G 100 FBGA Top View (Ball Down) 1 2 A NC NC B NC 4 3 5 6 8 7 9 10 NC NC NC C D RFU RFU E RFU RFU F VCC G RFU RFU RFU RFU RFU RFU I RFU RFU RFU RFU RFU VCC VCC VCC VCC VCC VCC VCC VSS VSS VSS VSS VSS VSS VSS VSS VSS VCC VCC VSS Q Q RFU RFU RFU RFU Q Q RFU RFU RFU VSS RFU RFU RFU RFU DAT DAT DAT DAT 0 2 RFU DS RFU RFU 5 7 VCC VSS VCC RFU RFU Q Q Q RFU RFU DAT DAT VDD H J K VCC VSS VCC L Q Q Q M RFU RFU DAT DAT 1 3 VSS VCC Q Q N P VSS RST Q _n RFU RFU RFU CMD VSS RFU RFU CLK Q RFU 4 6 VCC VSS Q Q RFU R T NC U DNU 1 NC NC 2 eMMC Note: 1. NC 3 4 SUPPLY 5 6 GROUND 8 7 NC 9 NC 10 RFU K5 (DS) and J5 (VSS) can be left floating if HS400 mode is not used. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 9 IS21/22ES08G/16G/32G/64G 3. PIN DESCRIPTIONS Pin Name Type(1) CLK I Pin Function DATA INPUT Each cycle of this signal directs a one bit transfer on the command and either a one bit (1x) or a two bits transfer (2x) on all the data lines. The frequency may vary between zero and the maximum clock frequency DATA DAT0~DAT7 I/O/PP CMD I/O/PP/OD RST# I DS O/PP VDDI VCC VCCQ VSS VSSQ RFU N.C. - These are bidirectional data channels. The DAT signals operate in push-pull mode. Only the Device or the host is driving these signals at a time. By default, after power up or reset, only DAT0 is used for data transfer. A wider data bus can be configured for data transfer, using either DAT0-DAT3 or DAT0-DAT7, by the eMMC host controller. The eMMC Device includes internal pull-ups for data lines DAT1-DAT7. Immediately after entering the 4-bit mode, the Device disconnects the internal pull ups of lines DAT1, DAT2, and DAT3. Correspondingly, immediately after entering to the 8-bit mode the Device disconnects the internal pull-ups of lines DAT1–DAT7. COMMAND/RESPONSE This signal is a bidirectional command channel used for Device initialization and transfer of commands. The CMD signal has two operation modes: open-drain for initialization mode, and push-pull for fast command transfer. Commands are sent from the eMMC host controller to the eMMC Device and responses are sent from the Device to the.host. HARDWARE RESET Data Strobe This signal is generated by the device and used for output in HS400 mode. The frequency of this signal follows the frequency of CLK. For data output each cycle of this signal directs two bits transfer(2x) on the data - one bit for positive edge and the other bit for negative edge. For CRC status response output and CMD response output (enabled only HS400 enhanced strobe mode), the CRC status is latched on the positive edge only, and don't care on the negative edge. INTERNAL VOLTAGE NODE At least a 0.1uF capacitor is required to connect VDDI to ground. A 1uF capacitor is recommended. Do not tie to supply voltage or ground. POWER SUPPLY VCC is the power supply for Core POWER SUPPLY VCC is the power supply for I/O Ground VSS is the ground for Core GROUND VSSQ is the ground for I/O Reserved For Future Use NO CONNECTION Lead is not internally connected. Note: 1. I: input; O: output; PP: push-pull; OD: open-drain; NC: Not connected (or logical high); S: power Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 10 IS21/22ES08G/16G/32G/64G 4. eMMC Device and System eMMC consists of a single chip MMC controller and NAND flash memory module. The micro-controller interfaces with a host system allowing data to be written to and read from the NAND flash memory module. The controller allows the host to be independent from details of erasing and programming the flash memory. Figure 4.1 eMMC System Overview Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 11 IS21/22ES08G/16G/32G/64G 5. REGISTER SETTINGS 5.1 OCR Register The 32-bit operation conditions register (OCR) stores the VDD voltage profile of the Device and the access mode indication. In addition, this register includes a status information bit. This status bit is set if the Device power up procedure has been finished. The OCR register shall be implemented by all Devices. Table 5.1 OCR Register VCCQ Voltage Window Width (Bits) OCR Bit OCR Value Device power up status bit (busy) (1) 1 [31] Note 1 Access Mode 2 [30:29] 10b(sector mode) Reserved 5 [28:24] 0 0000b VCCQ: 2.7 – 3.6V 9 [23:15] 1 1111 1111b VCCQ: 2.0 – 2.6V VCCQ: 1.7 – 1.95V Reserved 7 1 7 [14:8] [7] [6:0] 000 0000b 1b 000 0000b Note: 1. This bit is set to LOW if the device has not finished the power up routine. 5.2 CID Register The Card Identification (CID) register is 128 bits wide. It contains the Device identification information used during the Device identification phase (eMMC protocol). Table 5.2 CID Register Name Field Width (Bits) CID Bits CID Value Manufacturer ID MID 8 [127:120] 9Dh Reserved - 6 [119:114] - Device/BGA CBX 2 [113:112] 1h OEM/application ID OID 8 [111:104] 1h 8GB Product Name 16GB PNM 32GB IS008G 48 [103:56] 64GB Product Revision IS016G IS032G IS064G PRV 8 [55:48] 50h Product Serial Number PSN 32 [47:16] Random by Production Manufacturing Date MDT 8 [15:8] Month, Year CRC7 Checksum CRC 7 [7:1] Not used, always “1” - 1 [0] - (1) 1h Note: 1. The description is same as e.MMC ™ JEDEC standard. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 12 IS21/22ES08G/16G/32G/64G 5.3 CSD Register The Card-Specific Data (CSD) register provides information on how to access the contents stored in eMMC. The CSD registers are used to define the error correction type, maximum data access time, data transfer speed, data format…etc. For details, refer to section 7.3 of the JEDEC Standard Specification No.JESD84-B50. Table 5.3 CSD Register Name Field CSD Structure CSD_STRUCTURE Width (Bits) 2 System Specification Version SPEC_VERS 4 - Reserved CSD Bits CSD Value(1) [127:126] 3h [125:122] 4h 2 [121:120] - TAAC 8 [119:112] 4Fh NSAC 8 [111:104] 1h TRAN_SPEED 8 [103:96] 32h (2) Data Read Access Time 1 Data Read Access Time 2 in CLK Cycles (NSAC x 100) Maximum Bus Clock Frequency Card Command Classes CCC 12 [95:84] F5h Maximum Read Data Block Length READ_BL_LEN 4 [83:80] 9h Partial Blocks for Reads supported READ_BL_PARTIAL 1 [79] 0h Write Block Misalignment WRITE_BLK_MISALIGN 1 [78] 0h Read Block Misalignment READ_BLK_MISALIGN 1 [77] 0h DS Register Implemented DSR_IMP 1 [76] 0h - 2 [75:74] - Reserved (2) Device Size C-SIZE 12 [73:62] FFFh Maximum Read Current at VDD min VDD_R_CURR_MIN 3 [61:59] 7h Maximum Read Current at VDD max VDD_R_CURR_MAX 3 [58:56] 7h Maximum Write Current at VDD min VDD_W_CURR_MIN 3 [55:53] 7h Maximum Write Current at VDD max VDD_W_CURR_MAX 3 [52:50] 7h Device Size Multiplier C_SIZE_MULT 3 [49:47] 7h Erase Group Size ERASE_GRP_SIZE 5 [42:46] 1Fh Erase Group Size Multiplier ERASE_GRP_SIZE_MULT 5 [41:37] 1Fh Write Protect Group Size WR_GRP_SIZE 5 [36:32] 0Fh Write Protect Group Enable WR_GRP_ENABLE 1 [31] 1h Manufacturer Default ECC DEFAULT_ECC 2 [30:29] 0h Write-Speed Factor R2W_FACTOR 3 [28:26] 2h Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 13 IS21/22ES08G/16G/32G/64G Name Field Maximum Write Data Block Length WRITE_BL_LEN Width (Bits) 4 Partial Blocks for Writes supported WRITE_BL_PARTIAL Reserved (2) CSD Bits CSD Value(1) [25:22] 9h 1 [21] 0h - 4 [20:17] - Content Protection Application CONTENT_PROT_APP 1 [16] 0h File-Format Group FILE_FORMAT_GRP 1 [15] 0h Copy Flag (OTP) COPY 1 [14] 0h Permanent Write Protection PERM_WRITE_PROTECT 1 [13] 0h Temporary Write Protection TEMP_WRITE_PROTECT 1 [12] 0h File Format FILE_FORMAT 2 [11:10] 0h ECC ECC 2 [9:8] 0h CRC CRC 7 [7:1] 30h Not Used, always “1” - 1 [0] 1h Note: 1. CSD value might be subject to change without notice. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 14 IS21/22ES08G/16G/32G/64G 5.4 Extended CSD Register The Extended CSD register defines the Device properties and selected modes. It is 512 bytes long. The most significant 320 bytes are the Properties segment, which defines the Device capabilities and cannot be modified by the host. The lower 192 bytes are the Modes segment, which defines the configuration the Device is working in. These modes can be changed by the host by means of the SWITCH command. For details, refer to section 7.4 of the JEDEC Standard Specification No.JESD84-B50. Table 5.4 ECSD Register Name Field Reserved - Size (Bytes) 6 Extended Security Commands Error EXT_SECURITY_ERR Supported Command Sets HPI Features Background Operations Support ECSD Bits ECSD Value [511:506] - 1 [505] 0h S_CMD_SET 1 [504] 1h HPI_FEATURES 1 [503] 1h BKOPS_SUPPORT 1 [502] 1h Max Packed Read Commands MAX_PACKED_READS 1 [501] 3Ch Max Packed Write Commands MAX_PACKED_WRITES 1 [500] 3Ch Data Tag Support DATA_TAG_SUPPORT 1 [499] 1h Tag Unit Size TAG_UNIT_SIZE 1 [498] 3h Tag Resources Size TAG_RES_SIZE 1 [497] 0h Context Management Capabilities CONTEXT_CAPABILITIES 1 [496] 5h 8GB Large Unit Size LARGE_UNIT_SIZE_ M1 16GB 32GB 07h 1 [495] 64GB 07h 0Fh 0Fh Extended Partitions Attribute Support EXT_SUPPORT 1 [494] 3h Supported Modes SUPPORT_MODES 1 [493] 1h FFU Features FFU_FEATURES 1 [492] 0h Operations Code Timeout OPERATION_CODE_TIEMOUT 1 [491] 0h FFU Argument FFU_ARG 4 [490:487] 65535 Reserved Number of FW Sectors Correctly Programmed 181 [486:306] - 4 [305:302] 0h 32 [301:270] 0h Device Life Time Estimation Type B NUMBER_OF_FW_SECTORS_C ORRECTLY_pROGRAMMED VENDOR_PROPRIETARY_HEALT H_REPORT DEVICE_LIFE_TIME_EST_TYP_B 1 [269] 1h Device Life Time Estimation Type A DEVICE_LIFE_TIME_EST_TYP_A 1 [268] 1h Pre EOL Information PRE_EOL_INFO 1 [267] 1h Vendor Proprietary Health Report Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 15 IS21/22ES08G/16G/32G/64G Name Field Optimal Read Size OPTIMAL_READ_SIZE Optimal Write Size OPTIMAL_WRIT E_SIZE 8/16/32/64GB Size (Bytes) 1 ECSD Bits ECSD Value(1) [266] 1h 1 [265] 8h Optimal Trim Unit Size OPTIMAL_TRIM_UNIT_SIZE 1 [264] 1h Device Version DEVICE_VERSION 2 [263:262] 0h Firmware Version Power Class for 200MHz, DDR at VCC=3.6V Cache Size FIRMWARE_VERSION 8 [261:254] - PWR_CL_DDR_200_360 1 [253] 0h CACHE_SIZE 4 [252:249] 1024 Generic CMD6 Timeout GENERIC_CMD6_TIME 1 [248] 19h Power Off Notification (Long) Timeout POWER_OFF_LONG_TIME 1 [247] FFh Background Operations Status Number of Correctly Programmed Sectors First Initialization Time After Partitioning (First CMD1 to Device ready) Reserved BKOPS_STATUS CORRECTLY_PRG_SECTORS_ NUM 1 [246] 0h 4 [245:242] 0h INI_TIMEOUT_PA 1 [241] 64h - 1 [240] - Power Class for 52MHz, DDR at 3.6V PWR_CL_DDR_52_360 1 [239] 0h Power Class for 52MHz, DDR at 1.95V PWR_CL_DDR_52_195 1 [238] 0h Power Class for 200MHz at 3.6V PWR_CL_200_360 1 [237] 0h Power Class for 200MHz at 1.95V Minimum Write Performance for 8-bit at 52MHz in DDR Mode Minimum Read Performance for 8-bit at 52MHz in DDR Mode Reserved PWR_CL_200_195 [236] 0h TRIM Multiplier Secure Feature Support MIN_PERF_DDR_W_8_52 1 [235] 0h MIN_PERF_DDR_R_8_52 1 [234] 0h - 1 [233] - 1 [232] 1 [231] 8/16/32GB TRIM_MULT 64GB SEC_FEATURE_SUPPORT 8/16GB SECURE ERASE Multiplier SECURE TRIM Multiplier SEC_ERASE_ MULT 32GB SEC_TRIM_M ULT 11h 22h 55h 25h 1 [230] 2Ch 64GB 21h 8/16GB 25h 32GB 1 [229] 64GB 2Ch 21h Boot Information BOOT_INFO 1 [228] 7h Reserved - 1 [227] - Boot Partition Size BOOT_SIZE_MULT 1 [226] 20h Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 16 IS21/22ES08G/16G/32G/64G Name Size (Bytes) Field ECSD Bits 8GB Access Size 16GB ACC_SIZE 32GB 7h 1 [225] 64GB High-Capacity Erase Unit Size High-Capacity Erase Timeout HC_ERASE_GRP_SIZE 8/16/32GB ERASE_TIME OUT_MULT 64GB ECSD Value(1) 7h 8h 9h 1 [224] 1 [223] 1h 11h 22h Reliable Write-Sector Count REL_WR_SEC_C 1 [222] 1h High-Capacity Write Protect Group Size HC_WP_GRP_SIZE 1 [221] 10h Sleep Current (VCC) S_C_VCC 1 [220] 0Ah Sleep Current (VCCQ) 1 [219] 0Bh 1 [218] 14h Sleep/Awake Timeout S_C_VCCQ PRODUCTION_STATE_AWARE NESS_TIMEOUT S_A_TIMEOUT 1 [217] 13h Sleep Notification Timeout SLEEP_NOTIFICATION_TIME 1 [216] 0Fh Production State Awareness Timeout 15269888(5) 8GB Sector Count 16GB SEC_COUNT 32GB 4 [215:212] 61079552(5) 122159104(5) 64GB Reserved Minimum Write Performance for 8-bit at 52MHz Minimum Read Performance for 8-bit at 52MHz Minimum Write Performance for 8-bit at 26MHz and 4-bit at 52MHz Minimum Read Performance for 8-bit at 26MHz and 4-bit at 52MHz Minimum Write Performance for 4-bit at 26MHz Minimum Read Performance for 4-bit at 26MHz Reserved 30539776(5) - 1 [211] - MIN_PERF_W_8_52 1 [210] 8h MIN_PERF_R_8_52 1 [209] 8h MIN_PERF_W_8_26_4_52 1 [208] 8h MIN_PERF_R_8_26_4_52 1 [207] 8h MIN_PERF_W_4_26 1 [206] 8h MIN_PERF_R_4_26 1 [205] 8h - 1 [204] - Power Class for 26MHz at 3.6V PWR_CL_26_360 1 [203] 0h Power Class for 52MHz at 3.6V PWR_CL_52_360 1 [202] 0h Power Class for 26MHz at 1.95V PWR_CL_26_195 1 [201] 0h Power Class for 52MHz at 1.95V PWR_CL_52_195 1 [200] 0h Partition Switching Timing PARTITION_SWITCH_TIME 1 [199] 3h Out-of-Interrupt Busy Timing OUT_OF_INTERRUPT_TIME 1 [198] 4h Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 17 IS21/22ES08G/16G/32G/64G ECSD Bits [197] ECSD Value(1) DRIVER_STRENGTH Size (Bytes) 1 CARD_TYPE 1 [196] 57h Reserved - 1 [195] - CSD Structure Version CSD_STRUCTURE 1 [194] 2h Reserved - 1 [193] - Extended CSD Structure Revision EXT_CSD_REV 1 [192] 7h Command Set CMD_SET 1 [191] 0h Name Field I/O Driver Strength Card Type 1Fh Reserved - 1 [190] - Command Set Revision CMD_SET_REV 1 [189] 0h Reserved - 1 [188] - Power Class POWER_CLASS 1 [187] 0h Reserved - 1 [186] - High-Speed Interface Timing HS_TIMING 1 [185] 1h(3) Reserved - 1 [184] - Bus Width Mode BUS_WIDTH 1 [183] 2h(4) Reserved - 1 [182] - Erased memory Content ERASED_MEM_CONT 1 [181] 0h Reserved - 1 [180] - Partition Configuration PARTITION_CONFIG 1 [179] 0h Boot Configuration Protection BOOT_CONFIG_PROT 1 [178] 0h Boot Bus Width BOOT_BUS_CONDITIONS 1 [177] 0h Reserved - 1 [176] - High-Density Erase Group Definition ERASE_GROUP_DEF 1 [175] 0h Boot Write Protection Status Registers BOOT_WP_STATUS 1 [174] 0h Boot Area Write Protection Register BOOT_WP 1 [173] 0h Reserved - 1 [172] - User Write Protection Register USER_WP 1 [171] 0h Reserved - 1 [170] - Firmware Configuration FW_CONFIG 1 [169] 0h 1 [168] 20h RPMB Size RPMB_SIZE_MU LT 8/16/32/64GB Write Reliability Setting Register WR_REL_SET 1 [167] 1Fh Write Reliability Parameter Register WR_REL_PARAM 1 [166] 04h Start Sanitize Operation SANITIZE_START 1 [165] 0h Manually Start Background Operations BKOPS_START 1 [164] 0h Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 18 IS21/22ES08G/16G/32G/64G Field Size (Bytes) ECSD Bits ECSD Value(1) BKOPS_EN 1 [163] 0h RST_n_FUNCTION 1 [162] 0h HPI Management HPI_MGMT 1 [161] 0h Partitioning Support PARTITIONING_SUPPORT 1 [160] 7h Name Enable Background Operations Handshake Hardware Reset Function 8GB Maximum Enhanced Area Size 16GB MAX_ENH_SIZ E_MULT 32GB 466 3 [159:157] 64GB Partitions Attribute Partitioning Setting General-Purpose Partition Size PATTITIONS_ATTRIBUTE PARTITIONING_SETTING_COM PLETED GP_SIZE_MULT4 GP_SIZE_MULT3 GP_SIZE_MULT2 932 1864 3728 1 [156] 0h 1 [155] 0h [154:152] 0h [151:149] 0h [148:146] 0h [145:143] 0h 12 GP_SIZE_MULT1 Enhanced User Data Area Size ENH_SIZE_MULT 3 [142:140] 0h Enhanced User Data Start Address ENH_START_ADDR 4 [139:136] 0h Reserved - 1 [135] - Bad Block Management mode SEC_BAD_BLK_MGMNT PRODUCTION_STATE_AWARE NESS 1 [134] 0h 1 [133] 0h Production State Awareness Package Case Temperature is controlled Periodic Wake-Up Program CID/CSD in DDR Mode Support Reserved TCASE_SUPPORT 1 [132] 0h PERIODIC_WAKEUP PROGRAM_CID_CSD_DDR_SU PPORT - 1 [131] 0h 1 [130] 1h 2 [129:128] - Vendor Specific Fields VENDOR_SPECIFIC_NFIELD 64 [127:64] - Native Sector Size NATIVE_SECTOR_SIZE 1 [63] 0h Sector Size Emulation USE_NATIVE_SECTOR 1 [62] 0h Sector Size st 1 Initialization After Disabling Sector Size Emulation Class 6 Command Control Number of Addressed Groups To Be Released Exception Events Control DATA_SECTOR_SIZE 1 [61] 0h INI_TIMEOUT_EMU 1 [60] 0h CLASS_6_CTRL 1 [59] 0h DYNCAP_NEEDED 1 [58] 0h EXCEPTION_EVENTS_CTRL 2 [57:56] 0h Exception Events Status EXCEPTION_EVENTS_STATUS 2 [55:54] 0h Extended Partitions Attribute EXT_PARTITIONS_ATTRIBUTE 2 [53:52] 0h Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 19 IS21/22ES08G/16G/32G/64G Context Configuration CONTEXT_CONF Size (Bytes) 15 Packed Command Status PACKED_COMMAND_STATUS 1 [36] 0h Packed Command Failure Index PACKED_FAILURE_INDEX 1 [35] 0h Name Field ECSD Bits [51:37] ECSD Value(1) 0h Power Off Notification POWER_OFF_NOTIFICATION 1 [34] 0h Control To Turn The Cache ON/OFF CACHE_CTRL 1 [33] 0h Flushing Of The Cache FLUSH_CACHE 1 [32] 0h Reserved - 1 [31] - Mode Config MODE_CONFIG 1 [30] 0h Mode Operation Codes MODE_OPERATION_STATUS 1 [29] 0h Reserved - 2 [28:27] - FFU Status FFU_STATUS 1 [26] 0h Pre Loading Data Size PRE_LOADING_DATA_SIZE 4 [25:22] Max Pre Loading Data Size MAX_PRE_LOADING _DATA_SIZE 16GB 32GB 0h 7569408(5) 8GB 4 [21:18] 15204352(5) 30408704(5) 60817408(5) 1 [17] 1h Secure Removal Type 64GB PRODUCT_STATE_AWARENES S_ENABLEMENT SECURE_REMOVAL_TYPE 1 [16] 1h Command Queue Mod Enable CMQ_MODE_EN 1 [15] 0h Reserved - 15 [14:0] Product State Awareness Enablement Note: 1. Reserved bits should read as “0”. 2. Obsolete values should be don’t care. 3. This field is 0 after power-on, H/W reset or software reset, thus selecting the backwards compatible interface timing for the Device. If the host sets 1 to this field, the Device changes the timing to high speed interface timing (see Section 10.6.1 of JESD84-B50). If the host sets value 2, the Device changes its timing to HS200 interface timing (see Section 10.8.1 of JESD854-B50). If the host sets HS_TIMING [3:0] to 0x3, the device changes it’s timing to HS400 interface timing (see 10.10). 4. It is set to “0” (1bit data bus) after power up and can be changed by a SWITCH command. 5. Could be changed by Formware update. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 20 IS21/22ES08G/16G/32G/64G 5.5 RCA Register The writable 16-bit Relative Device Address (RCA) register carries the Device address assigned by the host during the Device identification. This address is used for the addressed host-Device communication after the Device identification procedure. The default value of the RCA register is 0x0001. The value 0x0000 is reserved to set all Devices into the Stand-by State with CMD7. For detailed register setting value, please refer to FAE. 5.6 DSR Register The 16-bit driver stage register (DSR) is described in detail in Section 7.6 of the JEDEC Standard Specification No.JESD84-B50. It can be optionally used to improve the bus performance for extended operating conditions (depending on parameters like bus length, transfer rate or number of Devices). The CSD register carries the information about the DSR register usage. For detailed register setting value, please refer to FAE. Table 5.1 eMMC Registers Width Name Description (Bytes) CID 16 Device Identification number, an individual number for identification. Relative Device Address is the Device system address, dynamically RCA 2 assigned by the host during initialization. DSR 2 Driver Stage Register, to configure the Device’s output drivers. Device Specific Data, information about the Device operation CSD 16 conditions. Operation Conditions Register. Used by a special broadcast command OCR 4 to identify the voltage type of the Device. Extended Device Specific Data. Contains information about the Device EXT_CSD 512 capabilities and selected modes. Introduced in standard v4.0 Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 Implementation Mandatory Mandatory Optional Mandatory Mandatory Mandatory 21 IS21/22ES08G/16G/32G/64G 6. The eMMC BUS The eMMC bus has ten communication lines and three supply lines: • CMD: Command is a bidirectional signal. The host and Device drivers are operating in two modes, open drain and push/pull. • DAT0-7: Data lines are bidirectional signals. Host and Device drivers are operating in push-pull mode • CLK: Clock is a host to Device signal. CLK operates in push-pull mode • Data Strobe: Data Strobe is a Device to host signal. Data Strobe operates in push-pull mode. Figure 6.1 BUS Circuitry Diagram The ROD is switched on and off by the host synchronously to the open-drain and push-pull mode transitions. The host does not have to have open drain drivers, but must recognize this mode to switch on the R OD. RDAT and RCMD are pull-up resistors protecting the CMD and the DAT lines against bus floating device when all device drivers are in a high-impedance mode. A constant current source can replace the ROD by achieving a better performance (constant slopes for the signal rising and falling edges). If the host does not allow the switchable ROD implementation, a fixed RCMD can be used).Consequently the maximum operating frequency in the open drain mode has to be reduced if the used R CMD value is higher than the minimal one given in. RData strobe is pull-down resistor used in HS400 device. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 22 IS21/22ES08G/16G/32G/64G 7. POWER-UP 7.1 eMMC POWER-UP An eMMC bus power-up is handled locally in each device and in the bus master. 7.1 shows the power-up sequence and is followed by specific instructions regarding the power-up sequence. Refer to section 12.1 of the JEDEC Standard Specification No.JESD84-B50 for specific instructions regarding the power-up sequence. Figure 7.1 eMMC POWER-UP Diagram Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 23 IS21/22ES08G/16G/32G/64G 7.2 eMMC POWER-CYCLING The master can execute any sequence of VCC and VCCQ power-up/power-down. However, the master must not issue any commands until VCC and VCCQ are stable within each operating voltage range. After the slave enters sleep mode, the master can power-down VCC to reduce power consumption. It is necessary for the slave to be ramped up to VCC before the host issues CMD5 (SLEEP_AWAKE) to wake the slave unit. For more information about power cycling see Section 10.1.3 of the JEDEC Standard Specification No.JESD84-B50. Figure 7.2 eMMC POWER-CYCLE Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 24 IS21/22ES08G/16G/32G/64G 8. ELECTRICAL CHARACTERISTICS 8.1 ABSOLUTE MAXIMUM RATINGS (1) POWER CONSUMPTION Input Voltage VCC Supply VCCQ Supply -0.6V to +4.6V -0.6V to +4.6V -0.6V to +4.6V Notes: 1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 8.2 Operating Conditions Parameter Peak voltage on all lines All Inputs Input Leakage Current (before initialization sequence and/or the internal pull up resistors connected) Input Leakage Current (after initialization sequence and the internal pull up resistors disconnected) All Outputs Output Leakage Current (before initialization sequence) Output Leakage Current (after initialization sequence) Symbol Min Max. Unit -0.5 VCCQ + 0.5 V -100 100 μA -2 2 μA -100 -2 100 2 μA μA Remark Notes: 1. Initialization sequence is defined in Section 10.1 of the JEDEC Standard Specification No.JESD84-B50. 2. DS (Data Strobe) pin is excluded. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 25 IS21/22ES08G/16G/32G/64G 8.2.1 POWER SUPPLY: eMMC In the eMMC, VCC is used for the NAND flash device and its interface voltage; VCCQ is for the controller and the MMC interface voltage as shown in Figure 8.1. The core regulator is optional and only required when internal core logic voltage is regulated from VCCQ. A CReg capacitor must be connected to the VDDi terminal to stabilize regulator output on the system. Figure 8.1 eMMC Internal Power Diagram 8.2.2 eMMC Power Supply Voltage The eMMC supports one or more combinations of VCC and VCCQ as shown in Table 8.1. The VCCQ must be defined at equal to or less than VCC. Table 8.1 – eMMC Operating Voltage Parameter Symbol MIN MAX Unit Remarks Supply voltage (NAND) VCC 2.7 3.6 V Supply voltage (I/O) VCCQ 2.7 3.6 V 1.7 1.95 V Supply power-up for 3.3V tPRUH 35 ms Supply power-up for 1.8V tPRUL 25 ms The eMMC must support at least one of the valid voltage configurations, and can optionally support all valid voltage configurations. Vcc Table 8.2 – eMMC Voltage Combinations VCCQ 1.7V–1.95V 2.7V-3.6V Valid 2.7V–3.6V1 Valid Note: 1. VCCQ (I/O) 3.3 volt range is not supported in HS200 /HS400 devices. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 26 IS21/22ES08G/16G/32G/64G 8.2.3 BUS SIGNAL LINE LOAD The total capacitance CL of each line of the eMMC bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CDEVICE of eMMC connected to this line: CL = CHOST + CBUS + CDEVICE The sum of the host and bus capacitances must be under 20pF. Table 8.3 – Signal Line Load Parameter Pull-up resistance for CMD Pull-up resistance for DAT0–7 Bus signal line capacitance Single Device capacitance Maximum signal line inductance Symbol Min Max Unit RCMD 4.7 50 Kohm to prevent bus floating RDAT 10 50 Kohm to prevent bus floating CL 30 pF CDEVICE 6 pF 16 nH VCCQ decoupling capacitor 2.2+0.1 4.7+0.22 μF VCC capacitor value 1+0.1 4.7+0.22 μF 1 4.7+0.1 μF VDDi capacitor value CREG Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 Remark Single Device It should be located as close as possible to the balls defined in order to minimize connection parasitic It should be located as close as possible to the balls defined in order to minimize connection parasitic To stabilize regulator output to controller core logics. It should be located as close as possible to the balls defined in order to minimize connection parasitic 27 IS21/22ES08G/16G/32G/64G 8.2.4 HS400 REFERENCE LOAD The circuit in Figure 8.2 shows the reference load used to define the HS400 Device Output Timings and overshoot / undershoot parameters. The reference load is made up by the transmission line and the CREFERENCE capacitance. The reference load is not intended to be a precise representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers should use IBIS or other simulation tools to correlate the reference load to system environment. Manufacturers should correlate to their production test conditions. Delay time (td) of the transmission line has been introduced to make the reference load independent from the PCB technology and trace length. Figure 8.2 HS400 Reference Load Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 28 IS21/22ES08G/16G/32G/64G 8.3 BUS SIGNAL LEVELS As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage. Figure 8.3 BUS Signal Levels 8.3.1 BUS SIGNAL LINE LOAD The total capacitance CL of each line of the eMMC bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CDEVICE of eMMC connected to this line: CL = CHOST + CBUS + CDEVICE The sum of the host and bus capacitances must be under 20pF. Table 8.4 – Open-drain Bus Signal Level Parameter Symbol Min Max. Output HIGH voltage VOH VDD – 0.2 Output LOW voltage VOL 0.3 The input levels are identical with the push-pull mode bus signal levels. 8.3.2 Unit V V Conditions IOH = -100 μA IOL = 2 mA PUSH-PULL MODE BUS SIGNAL LEVEL-eMMC The device input and output voltages shall be within the following specified ranges for any V DD of the allowed voltage range For 2.7V-3.6V VCCQ range (compatible with JESD8C.01) Parameter Output HIGH voltage Output LOW voltage Input HIGH voltage Input LOW voltage Table 8.5 – Push-pull Signal Level—High-voltage eMMC Symbol Min Max. Unit Conditions VOH 0.75 * VCCQ V IOH = -100 μA @ VCCQ min VOL 0.125 * VCCQ V IOL = 100 μA @ VCCQ min VIH 0.625 * VCCQ VCCQ + 0.3 V VIL VSS – 0.3 0.25 * VCCQ V Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 29 IS21/22ES08G/16G/32G/64G For 1.70V – 1.95V VCCQ range (: Compatible with EIA/JEDEC Standard “EIA/JESD8-7 Normal Range” as defined in the following table. Parameter Table 8.6 – Push-pull Signal Level—1.70 -1.95 VCCQ Voltage Range Symbol Min Max. Unit Output HIGH voltage VOH Output LOW voltage VOL Input HIGH voltage Input LOW voltage VIH VIL VCCQ – 0.45V 0.65 * VCCQ 1 VSS – 0.3 Conditions V IOH = -2mA 0.45V V IOL = 2mA VCCQ + 0.3 V VDD2 V 0.35 * Notes: 1. 0.7 * VDD for MMC™4.3 and older revisions /HS400 devices. 2. 0.3 * VDD for MMC™4.3 and older revisions. 8.3.3 BUS OPERATING CONDITIONS for HS200 & HS400 The bus operating conditions for HS200 devices is the same as specified in sections 10.5.1 of JESD84-B50 through 13.5.2 of JESD84-B50. The only exception is that VCCQ=3.3v is not supported. 8.3.4 BUS DEVICE OUTPUT DRIVER REQUIREMENTS for HS200 & 400 Refer to section 10.5.4 of the JEDEC Standard Specification No.JESD84-B50. 8.4 BUS TIMING Figure 8.4 BUS Timing Diagram Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 30 IS21/22ES08G/16G/32G/64G 8.5 DEVICE INTERFACE TIMIMG Table 8.7 – High-speed Device Interface Timing Parameter Symbol Min Clock CLK1 Max. Unit Remark fPP 0 523 MHz CL ≤ 30 pF Tolerance:+100KHz fOD 0 400 kHz Tolerance: +20KHz tWH 6.5 tWL 6.5 tTLH 3 tTHL 3 Inputs CMD, DAT (referenced to CLK) Input set-up time tISU 3 Input hold time tIH 3 Outputs CMD, DAT (referenced to CLK) Output delay time during data transfer tODLY 13.7 Output hold time tOH 2.5 Signal rise time5 tRISE 3 Signal fall time tFALL 3 ns ns ns ns CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF ns ns CL ≤ 30 pF CL ≤ 30 pF ns ns ns ns CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF Clock frequency Data Transfer Mode (PP)2 Clock frequency Identification Mode (OD) Clock high time Clock low time Clock rise time4 Clock fall time Notes: 1. 2. 3. 4. 5. CLK timing is measured at 50% of VDD devices. eMMC shall support the full frequency range from 0-26Mhz or 0-52MH. Device can operate as high-speed Device interface timing at 26 MHz clock frequency. CLK rise and fall times are measured by min (VIH) and max (VIL). Inputs CMD DAT rise and fall times are measured by min (VIH) and max (VIL) and outputs CMD DAT rise and fall times are measured by min (VOH) and max (VOL). Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 31 IS21/22ES08G/16G/32G/64G Table 8.8 – Backward-compatible Device Interface Timing Clock CLK2 3 Clock frequency Data Transfer Mode (PP) fPP 0 26 MHz Clock frequency Identification Mode (OD) fOD 0 400 kHz Clock high time tWH 10 Clock low time tWL 10 ns Clock rise time4 tTLH 10 ns Clock fall time tTHL 10 ns Inputs CMD, DAT (referenced to CLK) Input set-up time tISU 3 ns Input hold time tIH 3 ns Outputs CMD, DAT (referenced to CLK) Output set-up time5 tOSU 11.7 ns 5 Output hold time tOH 8.3 ns CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF CL ≤ 30 pF Notes: 1. The Device must always start with the backward-compatible interface timing. The timing mode can be switched to highspeed interface timing by the host sending the SWITCH command (CMD6) with the argument for high-speed interface select. 2. CLK timing is measured at 50% of VDD. 3. For compatibility with Devices that support the v4.2 standard or earlier, host should not use > 26 MHz before switching to high-speed interface timing. 4. CLK rise and fall times are measured by min (VIH) and max (VIL). 5. tOSU and tOH are defined as values from clock rising edge. However, there may be Devices or devices which utilize clock falling edge to output data in backward compatibility mode. Therefore, it is recommended for hosts either to settWL value as long as possible within the range which will not go over tCK-tOH(min) in the system or to use slow clock frequency, so that host could have data set up margin for those devices. In this case, each device which utilizes clock falling edge might show the correlation either between tWL and tOSU or between tCK and tOSU for the device in its own datasheet as a note or its application notes. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 32 IS21/22ES08G/16G/32G/64G 8.6 BUS TIMING FOR DAT SIGNALS DURING DUAL DATA RATE OPERATION These timings apply to the DAT [7:0] signals only when the device is configured for dual data mode operation. In this dual data mode, the DAT signals operate synchronously of both the rising and the falling edges of CLK. The CMD signal still operates synchronously of the rising edge of CLK and therefore complies with the bus timing specified in section 10.5 of JEDEC Standard Specification No.JESD84-B50, therefore there is no timing change for the CMD signal. Figure 8.5 Timing Diagram; Data Input/Output in Dual Data Rate Mode 8.6.1 DUAL DATA RATE INTERFACE TIMINGS Parameter Table 8.9 – High-speed Dual Data Rate Interface Timing Symbol Min Max. Unit Remark Input CLK1 Clock duty cycle Input DAT (referenced to CLK-DDR mode) Input set-up time Input hold time Output DAT (referenced to CLK-DDR mode) Output delay time during data transfer Signal rise time (all signals)2 Signal fall time (all signals) 45 tISUddr tIHddr 2.5 2.5 tODLYddr tRISE tFALL 1.5 55 7 2 2 % Includes jitter, phase noise ns ns CL ≤ 20 pF CL ≤ 20 pF ns ns ns CL ≤ 20 pF CL ≤ 20 pF CL ≤ 20 pF Notes: 1. 2. CLK timing is measured at 50% of VDD. Inputs CMD, DAT rise and fall times are measured by min (V IH) and max (VIL), and outputs CMD, DAT rise and fall times are measured by min (VOH) and max (VOL) Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 33 IS21/22ES08G/16G/32G/64G 8.7 BUS TIMING SPECIFICATION IN HS400 MODE DUAL DATA RATE INTERFACE TIMINGS The CMD input timing for HS400 mode is the same as CMD input timing for HS200 mode. Figure 8.6 and Table 8.10 show Device input timing. Notes: 1. tISU and tIH measured at VIL(max.) and VIH(min.). 2. VIH denotes VIH(min.) and VIL denotes VIL(max.). Figure 8.6 HS400 Device Data Input Timing Parameter Symbol Table 8.10 – HS400 Device input timing Min Max Unit Remark Input CLK Cycle time data transfer mode Slew rate Duty cycle distortion Minimum pulse width tPERIOD 5 SR 1.125 tCKDCD tCKMPW 0.0 2.2 0.3 V/ns 200MHz (Max), between rising edges With respect to VT. With respect to VIH/VIL. ns Allowable deviation from an ideal 50% duty cycle. ns With respect to VT. Includes jitter, phase noise With respect to VT. Input DAT (referenced to CLK) Input set-up time tISUddr 0.4 ns CDevice ≤ 6pF With respect to VIH/VIL. Input hold time tIHddr 0.4 ns CDevice ≤ 6pF With respect to VIH/VIL. Slew rate SR 1.125 Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 V/ns With respect to VIH/VIL. 34 IS21/22ES08G/16G/32G/64G 8.7.1 HS400 DEVICE OUTPUT TIMING The Data Strobe is used to read data in HS400 mode. The Data Strobe is toggled only during data read or CRC status response Figure 8.7 HS400 Device Output Timing Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 35 IS21/22ES08G/16G/32G/64G Table 8.11 – HS400 Device Output timing Parameter Symbol Min Max Unit Remark Data Strobe Cycle time data transfer mode tPERIOD 5 200MHz(Max), between rising edges With respect to VT Slew rate SR 1.125 Duty cycle distortion tDSDCD 0.0 Minimum pulse width tDSMPW 2.0 Read pre-amble tRPRE 0.4 - tPERIOD Read postamble tRPST 0.4 - tPERIOD With respect to VOH/VOL and HS400 reference load V/ns 0.2 ns Allowable deviation from the input CLK duty cycle distortion (tCKDCD) With respect to VT Includes jitter, phase noise ns With respect to VT Max value is specified by manufacturer. Value up to infinite is valid Max value is specified by manufacturer. Value up to infinite is valid Output DAT (referenced to Data Strobe) Output skew tRQ 0.4 ns With respect to VOH/VOL and HS400 reference load Output hold skew tRQH 0.4 ns With respect to VOH/VOL and HS400 reference load. Slew rate SR V/ns With respect to VOH/VOL and HS400 reference load 1.125 NOTE 1: Measured with HS400 reference load Table 8.12 – HS400 Capacitance Parameter Symbol Min Pull-up resistance for CMD RCMD Pull-up resistance for DAT0-7 Max Unit 4.7 100(1) Kohm RDAT 10 100(1) Kohm Pull-down resistance for Data Strobe RDS 10 100(1) Kohm Internal pull up resistance DAT1-DAT7 Rint 10 150 Kohm Single Device capacitance CDevice 6 pF Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 Type Remark 36 IS21/22ES08G/16G/32G/64G 9. PACKAGE TYPE INFORMATION 9.1 100-ball FBGA Package (Q) Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 37 IS21/22ES08G/16G/32G/64G 9.2 153-BALL FBGA Package (C) Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 38 IS21/22ES08G/16G/32G/64G 10. ORDERING INFORMATION – Valid Part Numbers IS 21 E S 08G -J Q L I TEMPERATURE RANGE I = Industrial (-40°C to +85°C) A1 = Automotive Grade (-40°C to +85°C) PACKAGING CONTENT L = RoHS compliant PACKAGE Type C = 153-ball FBGA Q = 100-ball FBGA OPTION J = Standard Generation. Blank = 1st Gen. eMMC Density 08G = 8 GB 16G = 16 GB 32G = 32 GB 64G = 64 GB INTERFACE S = eMMC 5.0 F = eMMC 5.1 Technology E = ISSI eMMC with MLC NAND Product Family 21 = Managed NAND 22 = Automotive Managed NAND BASE PART NUMBER IS = Integrated Silicon Solution Inc. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 39 IS21/22ES08G/16G/32G/64G Density Interface NAND Flash Package Temp. Grade I-Temp. 100 FBGA Automotive, A1 8GB eMMC 5.0 IS21ES08G-JQLI (1) I-Temp. Automotive, A1 IS21ES08G-JCLI (1) I-Temp. 100 FBGA Automotive, A1 eMMC 5.0 IS21ES16G-JQLI (1) I-Temp. I-Temp. Automotive, A1 IS21ES32G-JQLI (1) I-Temp. Automotive, A1 IS22ES32G-JQLA1 IS21ES32G-JCLI (1) I-Temp. 100 FBGA Automotive, A1 eMMC 5.0 IS22ES16G-JCLA1 128Gbx2 153 FBGA 64GB IS22ES16G-JQLA1 IS21ES16G-JCLI Automotive, A1(1) 100 FBGA eMMC 5.0 IS22ES08G-JCLA1 128Gbx1 153 FBGA 32GB IS22ES08G-JQLA1 64Gbx1 153 FBGA 16GB Order Part Number IS22ES32G-JCLA1 IS21ES64G-JQLI (1) IS22ES64G-JQLA1 128Gbx4 I-Temp. 153 FBGA Automotive, A1(1) IS21ES64G-JCLI IS22ES64G-JCLA1 Note: 1. A1: Meets AEC-Q100 requirements with PPAP. Integrated Silicon Solution, Inc. – www.issi.com – Rev. 0B 02/05/2018 40 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ISSI: IS21ES32G-JCLI IS21ES32G-JCLI-TR IS21ES32G-JQLI IS21ES32G-JQLI-TR
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