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IS21TF08G-JCLI

IS21TF08G-JCLI

  • 厂商:

    ISSI(芯成半导体)

  • 封装:

    VFBGA153_13X11.5MM

  • 描述:

    IS21TF08G-JCLI

  • 数据手册
  • 价格&库存
IS21TF08G-JCLI 数据手册
IS21/22TF08G IS21TF08G IS22TF08G 8GB eMMC With eMMC 5.1 Interface & pSLC Mode NAND DATA SHEET Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 1 IS21/22TF08G 8GB eMMC with eMMC 5.1 Interface & pSLC Mode NAND FEATURES • Packaged NAND flash memory with eMMC 5.1 interface - IS21/22TF08G: 8Gigabyte • • • • • • • • • • • Compliant with eMMC Specification Ver.4.3, 4.4, 4.41,4.5, 4.51, 5.0, 5.1 Device can be converted to eMMC 4.3, 4.41, 4.51, 5.0 via initializing Bus mode High-speed eMMC protocol Clock frequency: 0-200MHz. Ten-wire bus (clock, 1 bit command, 8 bit data bus) and a hardware reset. Supports three different data bus widths : 1 bit(default), 4 bits, 8 bits Data transfer rate: up to 52Mbyte/s (using 8 parallel data lines at 52 MHz) Single data rate : up to 200Mbyte/s @ 200MHz (HS200) Dual data rate : up to 400Mbyte/s @ 200MHz (HS400) Operating voltage range : VCCQ = 1.8 V/3.3 V (Automotive A2 Grade only supports 1.8V VCCQ) VCC = 2.7 – 3.6V Error free memory access Internal error correction code (ECC) to protect data communication Internal enhanced data management algorithm Solid protection from sudden power failure, safe-update operations for data content Security Support secure erase and trim commands Enhanced write protection with permanent and partial protection options Key Features : HS400, Field Firmware Update (FFU), Power Off Notification, Pre EOL information, Enhanced Device Life time, Optimal Size eMMC 5.1 Features: Command Queuing, Enhanced Strobe, Cache Flushing Report, BKOPS Control, Cache Barrier, RPMB Throughput Improve, Secure Write Protection. Temperature range Industrial Grade (I): -40 ℃ ~ 85 ℃ Automotive Grade (A1): -40 ℃ ~ 85 ℃ Automotive Grade (A2): -40 ℃ ~ 105 ℃ (The Surface Temperature of Tc cannot be over 115 ℃) Package 153 FBGA (11.5mm x 13mm x 1.0mm) 100 FBGA (14.0mm x 18.0mm x 1.4mm) Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 2 IS21/22TF08G GENERAL DESCRIPTION ISSI eMMC products follow the JEDEC eMMC 5.1 standard. It is ideal for embedded storage solutions for Industrial application and automotive application, which require high performance across a wide range of operating temperatures. eMMC encloses the pSLC Mode NAND and eMMC controller inside as one JEDEC standard package, providing a standard interface to the host. The eMMC controller directly manages NAND flash, including ECC, wear-leveling, IOPS optimization and read sensing. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 3 IS21/22TF08G TABLE OF CONTENTS FEATURES ............................................................................................................................................................ 2 GENERAL DESCRIPTION .................................................................................................................................... 3 TABLE OF CONTENTS ......................................................................................................................................... 4 1. PERFORMANCE SUMMARY ................................................................................................................... 6 1.1 Typical Sequential Burst Performance (PSA Pseudo-SLC Burst Status) .......................................... 6 1.2 Typical Sequential Sustained Performance (Normal Status) .............................................................. 6 1.3 Typical Random Burst Performance (PSA Pseudo SLC Burst Status) .............................................. 7 1.4 Typical Random Sustained Performance (Normal Status) .................................................................. 7 1.5 Device Power Consumption RMS VCC/VCCQ (TA = 25 ℃ @ 3.3V/1.8V) ................................................. 8 1.6 Device Power Consumption Standby VCC/VCCQ (TA = 25 ℃ @ 3.3V/1.8V) ........................................... 8 1.7 BOOT PARTITION AND RPMB (REPLAY PROTECTED MEMORY BLOCK) ....................................... 9 1.8 USER DENSITY ...................................................................................................................................... 10 2. PIN CONFIGURATION and DDESCRIPTIONS ...................................................................................... 11 3. OPERATING and STORAGE TEMPERATURE...................................................................................... 14 4. eMMC Device and System ...................................................................................................................... 15 4.1 Memory Addressing..................................................................................................................................... 15 5. REGISTER SETTINGS ........................................................................................................................... 16 5.1 OCR Register ................................................................................................................................................ 16 5.2 CID Register ........................................................................................................................................... 16 5.3 CSD Register .......................................................................................................................................... 16 5.4 Extended CSD Register......................................................................................................................... 19 6. The eMMC BUS ....................................................................................................................................... 25 7. eMMC Device Overview .......................................................................................................................... 26 7.1 Clock (CLK) ............................................................................................................................................ 26 7.2 Data Strobe ............................................................................................................................................. 26 7.3 Command (CMD) .................................................................................................................................... 26 7.4 Input/Outputs (DAT0-DAT7) .................................................................................................................. 26 8. eMMC Functional Description.................................................................................................................. 27 8.1 Pseudo Technology (pSLC) .................................................................................................................. 27 8.2 Field Firmware Update (FFU) ................................................................................................................ 27 8.3 Power Off Notification for Sleep........................................................................................................... 28 8.4 Enhanced User Data Area ..................................................................................................................... 29 8.5 Write Cache ............................................................................................................................................ 29 8.6 Cache Enhancement Barrier................................................................................................................. 29 8.7 Cache Flushing Policy .......................................................................................................................... 30 8.8 Command Queuing (Disable by default) ............................................................................................. 31 Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 4 IS21/22TF08G 8.9 Production State Awareness (PSA) ..................................................................................................... 32 9. PACKAGE TYPE INFORMATION ........................................................................................................... 33 9.1 100-ball FBGA Package (Q) .......................................................................................................................... 33 9.2 153-BALL FBGA Package (C) ....................................................................................................................... 34 10. ORDERING INFORMATION – Valid Part Numbers ................................................................................ 35 Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 5 IS21/22TF08G 1. PERFORMANCE SUMMARY 1.1 Typical Sequential Burst Performance (PSA Pseudo-SLC Burst Status) Speed Mode & Operation Write Cache On 8GB Unit Read 320 MB/s Write 135 MB/s Read 320 MB/s Write 130 MB/s Read 175 MB/s Write 140 MB/s Read 175 MB/s Write 120 MB/s HS400 Write Cache Off Write Cache On HS200 Write Cache Off Notes: 1. Values for an 8-bit bus width, running ISSI proprietary tool, VCC=3.3V, VCCQ=1.8V. 2. Performance numbers might be subject to changes without notice. 3. The write cache size is 1536KB. 1.2 Typical Sequential Sustained Performance (Normal Status) Speed Mode & Operation Write Cache On 8GB Unit Read 320 MB/s Write 135 MB/s Read 320 MB/s Write 125 MB/s Read 175 MB/s Write 135 MB/s Read 175 MB/s Write 120 MB/s HS400 Write Cache Off Write Cache On HS200 Write Cache Off Notes: 1. Values for an 8-bit bus width, running HS400 mode, VCC=3.3V, VCCQ=1.8V. 2. Performance numbers might be subject to changes without notice. 3. The write cache size is 1536KB. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 6 IS21/22TF08G 1.3 Typical Random Burst Performance (PSA Pseudo SLC Burst Status) Speed Mode & Operation Write Cache On 8GB Unit Read 24,000 IOPS Write 28,000 IOPS Read 24,000 IOPS Write 2,400 IOPS Read 24,000 IOPS Write 28,000 IOPS Read 24,000 IOPS Write 2,300 IOPS HS400 Write Cache Off Write Cache On HS200 Write Cache Off Notes: 1. Values for an 8-bit bus width, running ISSI proprietary tool, VCC=3.3V, VCCQ=1.8V. 2. Performance numbers might be subject to changes without notice. 3. The write cache size is 1536KB. 1.4 Typical Random Sustained Performance (Normal Status) Speed Mode & Operation Write Cache On 8GB Unit Read 24,000 IOPS Write 28,400 IOPS Read 24,000 IOPS Write 2,400 IOPS Read 24,000 IOPS Write 28,500 IOPS Read 24,000 IOPS Write 2,300 IOPS HS400 Write Cache Off Write Cache On HS200 Write Cache Off Notes: 1. Values for an 8-bit bus width, running ISSI proprietary tool, VCC=3.3V, VCCQ=1.8V. 2. Performance numbers might be subject to changes without notice. 3. The write cache size is 1536KB. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 7 IS21/22TF08G 1.5 Device Power Consumption RMS VCC/VCCQ (TA = 25 ℃ @ 3.3V/1.8V) Speed Mode & Operation 8GB Unit ICC 55 mA ICCQ 220 mA ICC 55 mA ICCQ 120 mA ICC 40 mA ICCQ 220 mA ICC 55 mA ICCQ 120 mA Read HS400 Write Read HS200 Write Notes: 1. The measurement for RMS current is done as average RMS current consumption over a period of 100ms. 2. Current numbers might be subject to changes without notice. 1.6 Device Power Consumption Standby VCC/VCCQ (TA = 25 ℃ @ 3.3V/1.8V) Speed Mode & Operation HS400 HS200 8GB Unit CMD5 Sleep 190 uA Standby ICCQ 240 uA Standby ICC 30 uA CMD5 Sleep 190 uA Standby ICCQ 240 uA Standby ICC 30 uA Notes: 1. The current is measured at VCC = 3.3V + 5%, VCCQ = 1.8V + 5%, 8-bit bus width without clock frequency.. 2. Current numbers might be subject to changes without notice. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 8 IS21/22TF08G 1.7 BOOT PARTITION AND RPMB (REPLAY PROTECTED MEMORY BLOCK) Option Boot partition 1 Boot partition 2 RPMB J 4,096 KB 4,096 KB 4,096 KB B 16,384 KB 16,384 KB 4,096 KB Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 9 IS21/22TF08G 1.8 USER DENSITY Total user density depends on device type (Flash Mode). Part Number Capacity Flash Mode User Density Size IS/2122TF08G 8GB pSLC 7,817,134,080 Bytes Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 10 IS21/22TF08G 2. PIN CONFIGURATION and DDESCRIPTIONS 153 FBGA Top View (Ball Down) 3 4 DAT DAT DAT 0 1 DAT DAT 3 4 6 7 8 9 2 VSS RFU NC NC DAT DAT DAT 5 6 7 NC NC NC NC 11 12 13 14 NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC RFU NC NC NC VCC RFU NC NC NC RFU VSS RFU NC NC NC NC NC DS VSS NC NC NC NC NC NC VSS VCC NC NC NC K NC NC NC RFU NC NC NC L NC NC NC NC NC NC M NC NC NC N NC P NC NC 1 2 1 2 A NC NC B NC C NC I NC D NC NC NC E NC NC NC RFU F NC NC NC G NC NC H NC J VDD 5 VSS VCC NC Q Q NC VCC VSS RFU RFU RST _n RFU RFU VSS VCC VCC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC Q RFU NC NC RFU NC NC NC NC 6 7 8 9 10 11 12 CMD VCC VSS Q Q VCC VSS VCC VSS Q Q Q 3 4 5 VSS Q CLK Q NC eMMC Note: 1. 10 SUPPLY GROUND NC 13 14 RFU H5 (DS), A6 (VSS) and J5 (VSS) can be left floating if HS400 mode is not used. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 11 IS21/22TF08G 100 FBGA Top View (Ball Down) 1 2 A NC NC B NC 4 3 5 6 8 7 9 10 NC NC NC C D RFU RFU E RFU RFU F VCC G RFU RFU RFU RFU RFU RFU I RFU RFU RFU RFU RFU VCC VCC VCC VCC VCC VCC VCC VSS VSS VSS VSS VSS VSS VSS VSS VSS VCC VCC VSS Q Q RFU RFU RFU RFU Q Q RFU RFU RFU VSS RFU RFU RFU RFU DAT DAT DAT DAT 0 2 RFU DS RFU RFU 5 7 VCC VSS VCC RFU RFU Q Q Q RFU RFU DAT DAT 4 6 VCC VSS Q Q VDD H J K VCC VSS VCC L Q Q Q M RFU RFU DAT DAT 1 3 VSS VCC Q Q N P VSS RST Q _n RFU RFU RFU RFU RFU CMD CLK RFU VSS RFU Q R T NC U NC 1 NC NC 2 eMMC Note: 1. NC 3 4 SUPPLY 5 6 GROUND 8 7 NC 9 NC 10 RFU K5 (DS) and J5 (VSS) can be left floating if HS400 mode is not used. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 12 IS21/22TF08G PIN DESCRIPTIONS Pin Name CLK Clock Signal DAT0~DAT7 Data Bus Description CMD Command Signal RST# DS Hardware Reset Signal Data Strobe Signal, used in HS400 mode. VDDI Connect capacitor from VDDI to GND for stabilize internal power. VCC Supply voltage for controller and Flash memory power. VCCQ Supply voltage for controller and Flash memory I/O power. VSS Supply voltage ground for controller and Flash memory. Can be short with VSSQ. VSSQ Supply voltage ground for controller and Flash memory I/O. Can be short with VSSQ. RFU Reserved For Future Use. Left it floating for future use. NC In eMMC chip is no connect. Left it floating. Note: 1. I: input; O: output; PP: push-pull; OD: open-drain; NC: Not connected (or logical high); S: power Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 13 IS21/22TF08G 3. OPERATING and STORAGE TEMPERATURE Grade Condition Minimum and Maximum Ambient Temperature Industrial Maximum Case Temperature Temperature (1) (1) Minimum and Maximum Non-operating Temperature (2) Minimum and Maximum Ambient Temperature (1) Auto (A1) Maximum Case Temperature (1) Minimum and Maximum Non-operating Temperature (2) Minimum and Maximum Ambient Temperature (1) Auto (A2) Maximum Case Temperature (1) Minimum and Maximum Non-operating Temperature (2) -40 ℃ to 85 ℃ 95 ℃ -40 ℃ to 85 ℃ -40 ℃ to 85 ℃ 95 ℃ -40 ℃ to 85 ℃ -40 ℃ to 105 ℃ 115 ℃ -40 ℃ to 105 ℃ Notes: 1. To achieve optimized and performance, case temperature should not exceed maximum ambient operating temperature. 2. After being soldered onto PCBA. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 14 IS21/22TF08G 4. eMMC Device and System eMMC consists of a single chip MMC controller and NAND flash memory module. The micro-controller interfaces with a host system allowing data to be written to and read from the NAND flash memory module. The controller allows the host to be independent from details of erasing and programming the flash memory. Figure 4.1 eMMC System Overview 4.1 Memory Addressing Previous implementations of the eMMC specification are following byte addressing with 32-bit field. This addressing mechanism permitted for eMMC densities up to and including 2 GB. To support larger density, the addressing mechanism was update to support sector addresses (512 B sectors). The sector addresses shall be used for all devices with capacity larger than 2 GB. To determine the addressing mode, use the host should read bit [30:29] in the OCR register. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 15 IS21/22TF08G 5. REGISTER SETTINGS Within the Device interface six registers are defined: OCR, CID, CSD, EXT_CSD, RCA and DSR. These can be accessed only by corresponding commands (see Section 6.10 of JESD84-B51). 5.1 OCR Register The 32-bit operation conditions register (OCR) stores the VDD voltage profile of the Device and the access mode indication. In addition, this register includes a status information bit. This status bit is set if the Device power up procedure has been finished. The OCR register shall be implemented by all Devices. Table 5.1 OCR Register VCCQ Voltage Window Device power up status bit (busy) Width (Bits) OCR Bit OCR Value (1) 1 [31] Note 1 Access Mode 2 [30:29] 10b (sector mode) Reserved 5 [28:24] 0 0000b VCCQ: 2.7 – 3.6V 9 [23:15] 1 1111 1111b VCCQ: 2.0 – 2.6V VCCQ: 1.7 – 1.95V Reserved 7 1 7 [14:8] [7] [6:0] 000 0000b 1b 000 0000b Note: 1. This bit is set to LOW if the device has not finished the power up routine. 5.2 CID Register The Card Identification (CID) register is 128 bits wide. It contains the Device identification information used during the Device identification phase (eMMC protocol). Table 5.2 CID Register CID Bits CID Value MID Width (Bits) 8 [127:120] 9Dh - 6 [119:114] 0h CBX 2 [113:112] 1h Name Field Manufacturer ID Reserved Device/BGA OEM/application ID Product name OID PNM 8GB 8 [111:104] 1h 48 [103:56] IS008G Product Revision PRV 8 [55:48] 51h Product Serial Number PSN 32 [47:16] Random by Production Manufacturing Date MDT 8 [15:8] Month, Year CRC7 Checksum CRC 7 [7:1] Not used, always “1” - 1 [0] - (1) 1h Note: 1. The description is same as e.MMC ™ JEDEC standard. 5.3 CSD Register Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 16 IS21/22TF08G The Card-Specific Data (CSD) register provides information on how to access the contents stored in eMMC. The CSD registers are used to define the error correction type, maximum data access time, data transfer speed, data format…etc. For details, refer to section 7.3 of the JEDEC Standard Specification No.JESD84-B51. Table 5.3 CSD Register 2 4 2 8 Cell Type R R R R CSDslice [127:126] [125:122] [121:120] [119:112] NSAC 8 R [111:104] 1h TRAN_SPEED CCC READ_BL_LEN 8 12 4 [103:96] [95:84] [83:80] 32h 8F5h 9h READ_BL_PARTIAL 1 R R R R [79:79] 0h WRITE_BLK_MISALIGN READ_BLK_MISALIGN DSR_IMP C_SIZE 1 1 1 2 12 [78:78] [77:77] [76:76] [75:74] [73:62] 0h 0h 0h 0h FFFh VDD_R_CURR_MIN 3 R R R R R R [61:59] 7h VDD_R_CURR_MAX 3 [58:56] 7h VDD_W_CURR_MIN 3 [55:53] 7h VDD_W_CURR_MAX 3 [52:50] 7h C_SIZE_MULT ERASE_GRP_SIZE ERASE_GRP_MULT WP_GRP_SIZE WP_GRP_ENABLE DEFAULT_ECC R2W_FACTOR WRITE_BL_LEN 3 5 5 5 1 2 3 4 [49:47] [46:42] [41:37] [36:32] [31:31] [30:29] [28:26] [25:22] 7h 1Fh 1Fh 0Fh 1h 0h 2h 9h WRITE_BL_PARTIAL 1 R R R R R R R R R [21:21] 0h - 4 R [20:17] 0h Name Field Width CSD structure System specification version Reserved Data read access-time 1 Data read access-time 2 in CLK cycles (NSAC*100) Max. bus clock frequency Device command classes Max. read data block length Partial blocks for read allowed Write block misalignment Read block misalignment DSR implemented Reserved Device size Max. read current @ VDD min Max. read current @ VDD max Max. write current @ VDD min Max. write current @ VDD max Device size multiplier Erase group size Erase group size multiplier Write protect group size Write protect group enable Manufacturer default ECC Write speed factor Max. write data block length Partial blocks for write allowed Reserved CSD_STRUCTURE SPEC_VERS TAAC Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 R R R Value 3h 4h 0h 4Fh 17 IS21/22TF08G Name Content protection application File format group Copy flag (OTP) Permanent write protection Temporary write protection File format ECC code CRC Not used, always’1’ Field Width CONTENT_PROT_APP 1 FILE_FORMAT_GRP COPY PERM_WRITE_PROTECT TMP_WRITE_PROTECT FILE_FORMAT ECC CRC - 1 1 1 1 2 2 7 1 Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 Cell Type R CSDslice Value [16:16] 0h R/W R/W R/W R/W/E R/W R/W/E R/W/E - [15:15] [14:14] [13:13] [12:12] [11:10] [9:8] [7:1] [0:0] 0h 0h 0h 0h 0h 0h 2Eh 1h 18 IS21/22TF08G 5.4 Extended CSD Register The Extended CSD register defines the Device properties and selected modes. It is 512 bytes long. The most significant 320 bytes are the Properties segment, which defines the Device capabilities and cannot be modified by the host. The lower 192 bytes are the Modes segment, which defines the configuration the Device is working in. These modes can be changed by the host by means of the SWITCH command. Table 5.4 ECSD Register Name Properties Segment Reserved Extended Security Commands Error Supported Command Sets HPI features Background operations support Max packed read commands Max packed write commands Data Tag Support Tag Unit Size Tag Resources Size Context management capabilities Large Unit size Extended partitions attribute support Supported modes FFU features Operation codes timeout FFU Argument Barrier support Reserved CMDQ support CMDQ depth Reserved Number of FW sectors correctly programmed Vendor proprietary health report Device life time estimation type B Device life time estimation type A Pre EOL information Optimal read size Optimal write size Field Size (Bytes) CSD-slice Value – 6 [511:506] 0h EXT_SECURITY_ERR 1 [505] 0h S_CMD_SET HPI_FEATURES BKOPS_SUPPORT MAX_PACKED_READS MAX_PACKED_WRITES DATA_TAG_SUPPORT TAG_UNIT_SIZE TAG_RES_SIZE 1 1 1 1 1 1 1 1 [504] [503] [502] [501] [500] [499] [498] [497] 1h 1h 1h 20h 20h 1h 3h 0h CONTEXT_CAPABILITIES 1 [496] 5h LARGE_UNIT_SIZE_M1 1 [495] 18h EXT_SUPPORT 1 [494] 3h SUPPORTED_MODES FFU_FEATURES OPERATION_CODE_TIME_ OUT FFU_ARG BARRIER_SUPPORT Reserved CMDQ_SUPPORT CMDQ_DEPTH Reserved NUMBER_OF_FW_SECTOR S_CORRECTLY_PROGRAM MED VENDOR_PROPRIETARY_H EALTH_REPORT DEVICE_LIFE_TIME_EST_T YP_B DEVICE_LIFE_TIME_EST_T YP_A PRE_EOL_INFO OPTIMAL_READ_SIZE OPTIMAL_WRITE_SIZE 1 1 [493] [492] 3h 0h 1 [491] 0h 4 1 177 1 1 1 [490:487] [486] [485:309] [308] [307] [306] 0h 0h 0h 1h 1Fh 0h 4 [305:302] 0h 32 [301:270] – 1 [269] 1h 1 [268] 1h 1 1 1 [267] [266] [265] 1h 1h 8h Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 19 IS21/22TF08G Name Field Optimal trim unit size Device version Firmware version Power class for 200MHz, DDR at VCC=3.6V Cache size Generic CMD6 timeout Power off notification(long) timeout Background operations status Number of correctly programmed sectors 1st initialization time after partitioning Cache Flushing Policy Power class for 52MHz, DDR at 3.6V Power class for 52MHz, DDR at 1.95V Power class for 200MHz at 3.6V Power class for 200MHz, at 1.95V Minimum Write Performance for 8bit at 52MHz in DDR mode Minimum Read Performance for 8bit at 52MHz in DDR mode Reserved TRIM Multiplier Secure Feature support Secure Erase Multiplier Secure TRIM Multiplier Boot information Reserved OPTIMAL_TRIM_UNIT_SIZE DEVICE_VERSION FIRMWARE_VERSION Size (Bytes) 1 2 8 PWR_CL_DDR_200_360 Boot partition size BOOT_SIZE_MULTI Access size High-capacity erase unit size High-capacity erase timeout Reliable write sector count High-capacity write protect group size Sleep current (VCC) CSD-slice Value [264] [263:262] [261:254] 1h 0h – (note 5) 1 [253] 0h CACHE_SIZE GENERIC_CMD6_TIME 4 1 [252:249] [248] 600h Ah POWER_OFF_LONG_TIME 1 [247] 32h BKOPS_STATUS CORRECTLY_PRG_SECTOR S_NUM 1 [246] 0h 4 [245:242] 0h INI_TIMEOUT_AP 1 [241] 1Eh CACHE_FLUSH_POLICY 1 [240] 1h PWR_CL_DDR_52_360 1 [239] 0h PWR_CL_DDR_52_195 1 [238] 0h PWR_CL_200_360 1 [237] 0h PWR_CL_200_195 1 [236] 0h MIN_PERF_DDR_W_8_52 1 [235] 4Bh MIN_PERF_DDR_R_8_52 1 [234] 0h – TRIM_MULT SEC_FEATURE_SUPPORT SEC_ERASE_MULT SEC_TRIM_MULT BOOT_INFO – 1 1 1 1 1 1 1 [233] [232] [231] [230] [229] [228] [227] 1 [226] ACC_SIZE HC_ERASE_GRP_SIZE ERASE_TIMEOUT_MULT REL_WR_SEC_C 1 1 1 1 [225] [224] [223] [222] 0h 12h 55h 64h 64h 7h 0h 20h 80h 7h 1h 12h 1h HC_WP_GRP_SIZE 1 [221] 10h S_C_VCC 1 [220] 8h Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 J-option B-option 20 IS21/22TF08G Name Field Sleep current (VCCQ) Production state awareness Timeout Sleep/awake timeout S_C_VCCQ PRODUCTION_STATE_AW ARENESS_TIMEOUT S_A_TIMEOUT SLEEP_NOTIFICATION_TI ME SEC_COUNT Sleep Notification timeout Sector Count Security write protect information Minimum Write Performance for 8bit at 52MHz Minimum Read Performance for 8bit at 52MHz Minimum Write Performance for 8bit at 26MHz, for 4bit at 52MHz Minimum Read Performance for 8bit at 26MHz, for 4bit at 52MHz Minimum Write Performance for 4bit at 26MHz Minimum Read Performance for 4bit at 26MHz Reserved Power class for 26MHz at 3.6V 1R Power class for 52MHz at 3.6V 1R Power class for 26MHz at 1.95V 1 R Power class for 52MHz at 1.95V 1 R Partition switching timing Out-of-interrupt busy timing I/O Driver Strength Device type Reserved CSD structure version Reserved Extended CSD revision Modes Segment Command set Reserved Size (Bytes) 1 CSD-slice Value [219] 8h 1 [218] 0h 1 [217] 15h 1 [216] Fh 4 [215:212] 15267840 SECURE_WP_INFO 1 [211] 1h MIN_PERF_W_8_52 1 [210] 4Bh MIN_PERF_R_8_52 1 [209] 0h MIN_PERF_W_8_26_4_52 1 [208] 2Bh MIN_PERF_R_8_26_4_52 1 [207] 0h MIN_PERF_W_4_26 1 [206] 1Eh MIN_PERF_R_4_26 1 [205] 0h – 1 [204] 0h PWR_CL_26_360 1 [203] 0h PWR_CL_52_360 1 [202] 0h PWR_CL_26_195 1 [201] 0h PWR_CL_52_195 1 [200] 0h PARTITION_SWITCH_TIME OUT_OF_INTERRUPT_TIM E DRIVER_STRENGTH CARD_TYPE – – – EXT_CSD_REV 1 [199] 3h 1 [198] Ah 1 1 1 1 1 1 [197] [196] [195] [194] [193] [192] 1Fh 57h 0h 2h 0h 8h CMD_SET – 1 1 [191] [190] 0h 0h Name Field Command set revision Reserved CMD_SET_REV – Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 Size (Bytes) 1 1 CSD-slice Value [189] [188] 0h 0h 21 IS21/22TF08G Power class Reserved High-speed interface timing Strobe support Bus width mode Reserved Erased memory content Reserved Partition configuration Boot config protection Boot bus Conditions Reserved High-density erase group definition Boot write protection status registers Boot area write protection register Reserved User area write protection register Reserved FW configuration RPMB Size Write reliability setting register Write reliability parameter register Start Sanitize operation Manually start background operations Enable background operations handshake H/W reset function HPI management Partitioning Support Max Enhanced Area Size Partitions attribute Partitioning Setting POWER_CLASS – HS_TIMING STROBE_SUPPORT BUS_WIDTH – ERASED_MEM_CONT – PARTITION_CONFIG BOOT_CONFIG_PROT BOOT_BUS_CONDITIONS – 1 1 1 1 1 1 1 1 1 1 1 1 [187] [186] [185] [184] [183] [182] [181] [180] [179] [178] [177] [176] 0h 0h 1h (note 3) 1h 2h (note 4) 0h 0h 0h 0h 0h 0h 0h ERASE_GROUP_DEF 1 [175] 0h BOOT_WP_STATUS 1 [174] 0h BOOT_WP 1 [173] 0h – 1 [172] 0h USER_WP 1 [171] 0h – FW_CONFIG RPMB_SIZE_MULT WR_REL_SET 1 1 1 1 [170] [169] [168] [167] 1Eh 0h 20h 1Fh WR_REL_PARAM 1 [166] 15h SANITIZE_START 1 [165] 0h BKOPS_START 1 [164] 0h BKOPS_EN 1 [163] 2h RST_n_FUNCTION HPI_MGMT PARTITIONING_SUPPORT MAX_ENH_SIZE_MULT PARTITIONS_ATTRIBUTE PARTITION_SETTING_COM PLETED 1 1 1 3 1 [162] [161] [160] [159:157] [156] 0h 0h 7h 3A8h 1h 1 [155] 1h Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 22 IS21/22TF08G Name Field General Purpose Partition Size General Purpose Partition Size General Purpose Partition Size General Purpose Partition Size Enhanced User Data Area Size Enhanced User Data Start Address Reserved Bad Block Management mode GP_SIZE_MULT 4 GP_SIZE_MULT3 GP_SIZE_MULT2 GP_SIZE_MULT1 ENH_SIZE_MULT Size (Bytes) 3 3 3 3 3 ENH_START_ADDR Production state awareness Package Case Temperature is controlled Periodic Wake-up Program CID/CSD in DDR mode support Reserved Vendor Specific Fields Error code Error type Native sector size Sector size emulation Sector size 1st initialization after disabling sector size emulation Class 6 commands control Number of addressed group to be Released Exception events control Exception events status Extended Partitions Attribute Context configuration Packed command status Packed command failure index Power Off Notification Control to turn the Cache ON/OFF Flushing of the cache Reserved Mode config CSD-slice Value [154:152] [151:149] [148:146] [145:143] [142:140] 0h 0h 0h 0h 3A8h 4 [139:136] 0h – SEC_BAD_BLK_MGMNT PRODUCTION_STATE_AWA RENESS 1 1 [135] [134] 0h 0h 1 [133] 0h TCASE_SUPPORT 1 [132] 0h PERIODIC_WAKEUP PROGRAM_CID_CSD_DDR_ SUPPORT – VENDOR_SPECIFIC_FIELD ERROR_CODE ERROR_TYPE NATIVE_SECTOR_SIZE USE_NATIVE_SECTOR DATA_SECTOR_SIZE 1 [131] 0h 1 [130] 1h 2 61 2 1 1 1 1 [129:128] [127:67] [66:65] [64] [63] [62] [61] 0h – 0h 0h 0h 0h 0h INI_TIMEOUT_EMU 1 [60] 0h CLASS_6_CTRL 1 [59] 0h DYNCAP_NEEDED 1 [58] 0h 2 [57:56] 0h 2 [55:54] 0h 2 [53:52] 0h 15 [51:37] - 1 [36] 0h 1 [35] 0h 1 [34] 0h CACHE_CTRL 1 [33] 0h FLUSH_CACHE Reserved MODE_CONFIG 1 1 1 [32] [31] [30:30] 0h 0h 0h EXCEPTION_EVENTS_CTR L EXCEPTION_EVENTS_STAT US EXT_PARTITIONS_ATTRIBU TE CONTEXT_CONF PACKED_COMMAND_STAT US PACKED_FAILURE_INDEX POWER_OFF_NOTIFICATIO N Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 23 IS21/22TF08G Size (Bytes) 1 2 1 4 CSDslice [29:29] [28:27] [26:26] [25:22] 4 [21:18] 4843520 1 [17:17] 1h 1 [16:16] 01h CMQ_MODE_EN 1 [15:15] 0h Reserved 15 [14:0] 0h Name Field Mode operation codes Reserved FFU status Per loading data size MODE_OPERATION_CODES Reserved FFU_STATUS PRE_LOADING_DATA_SIZE MAX_PRE_LOADING_DATA_ SIZE PRODUCT_STATE_AWAREN ESS_ENABLEMENT SECURE_REMOVAL_TYPE Max pre loading data size Product state awareness enablement Secure removal type Command Queue Mode enable Reserved Value 0h 0h 0h 0h Notes: 1. Reserved bits should read as “0”. 2. Obsolete values should be don’t care. 3. This field is 0 after power-on, H/W reset or software reset, thus selecting the backwards compatible interface timing for the Device. If the host sets 1 to this field, the Device changes the timing to high speed interface timing (see Section 10.6.1 of JESD84-B50). If the host sets value 2, the Device changes its timing to HS200 interface timing (see Section 10.8.1 of JESD854-B50). If the host sets HS_TIMING [3:0] to 0x3, the device changes it’s timing to HS400 interface timing (see 10.10). 4. It is set to “0” (1bit data bus) after power up and can be changed by a SWITCH command. 5. Could be changed by Firmware release note. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 24 IS21/22TF08G 6. The eMMC BUS The eMMC bus has ten communication lines and three supply lines: • CMD: Command is a bidirectional signal. The host and Device drivers are operating in two modes, open drain and push/pull. • DAT0-7: Data lines are bidirectional signals. Host and Device drivers are operating in push-pull mode • CLK: Clock is a host to Device signal. CLK operates in push-pull mode • Data Strobe: Data Strobe is a Device to host signal. Data Strobe operates in push-pull mode. Figure 6.1 BUS Circuitry Diagram The ROD is switched on and off by the host synchronously to the open-drain and push-pull mode transitions. The host does not have to have open drain drivers, but must recognize this mode to switch on the ROD. RDAT and RCMD are pullup resistors protecting the CMD and the DAT lines against bus floating device when all device drivers are in a highimpedance mode. A constant current source can replace the ROD by achieving a better performance (constant slopes for the signal rising and falling edges). If the host does not allow the switchable ROD implementation, a fixed RCMD can be used).Consequently the maximum operating frequency in the open drain mode has to be reduced if the used RCMD value is higher than the minimal one given in. RData strobe is pull-down resistor used in HS400 device. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 25 IS21/22TF08G 7. eMMC Device Overview The eMMC device transfers data via a configurable number of data bus signals. The communication signals are: 7.1 Clock (CLK) Each cycle of this signal directs a one-bit transfer on the command and either a one bit (1x) or a two bits transfer (2x) on all the data lines. The frequency may vary between zero and the maximum clock frequency. 7.2 Data Strobe This signal is generated by the device and used for output in HS400 mode. The frequency of this signal follows the frequency of CLK. For data output each cycle of this signal directs two bits transfer(2x) on the data - one bit for positive edge and the other bit for negative edge. For CRC status response output and CMD response output (enabled only HS400 enhanced strobe mode), the CRC status is latched on the positive edge only, and don't care on the negative edge. 7.3 Command (CMD) This signal is a bidirectional command channel used for Device initialization and transfer of commands. The CMD signal has two operation modes: open-drain for initialization mode, and push-pull for fast command transfer. Commands are sent from the eMMC host controller to the eMMC Device and responses are sent from the Device to the host. 7.4 Input/Outputs (DAT0-DAT7) These are bidirectional data channels. The DAT signals operate in push-pull mode. Only the Device or the host is driving these signals at a time. By default, after power up or reset, only DAT0 is used for data transfer. A wider data bus can be configured for data transfer, using either DAT0-DAT3 or DAT0-DAT7, by the eMMC host controller. The eMMC Device includes internal pull-ups for data lines DAT1-DAT7. Immediately after entering the 4-bit mode, the Device disconnects the internal pull ups of lines DAT1, DAT2, and DAT3. Correspondingly, immediately after entering to the 8-bit mode the Device disconnects the internal pull-ups of lines DAT1–DAT. Table 5.1 Communication Interface Name CLK DAT0 DAT1 DAT2 DAT3 DAT4 DAT5 DAT6 DAT7 CMD RST_n VCC VCCQ VSS VSSQ DS Note: 1. Type1 I I/O/PP I/O/PP I/O/PP I/O/PP I/O/PP I/O/PP I/O/PP I/O/PP I/O/PP/OD I S S S S O/PP Description Clock Data Data Data Data Data Data Data Data Command/Response Hardware reset Supply voltage for Core Supply voltage for I/O Supply voltage ground for Core Supply voltage ground for I/O Data strobe I: input, O: output, PP: push-pull, OD: open-drain, NC: Not connected (or logical high), S: power supply. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 26 IS21/22TF08G 8. eMMC Functional Description 8.1 Pseudo Technology (pSLC) Each cell in a TLC NAND can be programmed to store 3 bits of data with 8 total voltage states. In Pseudo-SLC mode, the memory cell is used in 1-bit mode, thus resulting in higher endurance, lower error rates and extended temperature range. The firmware optimizes the eMMC device with Pseudo technology to achieve industrial and automotive level reliability. For ISSI eMMC device, Pseudo SLC (pSLC) mode provides one third capacity of TLC mode. 8.2 Field Firmware Update (FFU) Field Firmware Updates (FFU) enables features enhancement in the field. Using this mechanism, the host downloads a new version of the firmware to the eMMC device and, following a successful download, instructs the eMMC device to install the new downloaded firmware into the device. In order to start the FFU process the host first checks if the eMMC device supports FFU capabilities by reading SUPPPORTED_MODES and FW_CONFIG fields in the EXT_CSD. If the eMMC device supports the FFU feature the host may start the FFU process. The FFU process starts by switching to FFU Mode in MODE_CONFIG field in the EXT_CSD. In FFU Mode host should use closed-ended or open ended commands for downloading the new firmware and reading vendor proprietary data. In this mode, the host should set the argument of these commands to be as defined in FFU_ARG field. In case these commands have a different argument the device behavior is not defined and the FFU process may fail. The host should set Block Length to be DATA_SECTOR_SIZE. Downloaded firmware bundle must be DATA_SECTOR_SIZE size aligned (internal padding of the bundle might be required). Once in FFU Mode the host may send the new firmware bundle to the device using one or more write commands. The host could regain regular functionality of write and read commands by setting MODE_CONFIG field in the EXT_CSD back to Normal state. Switching out of FFU Mode may abort the firmware download operation. When host switched back to FFU Mode, the host should check the FFU Status to get indication about the number of sectors which were downloaded successfully by reading the NUMBER_OF_FW_SECTORS_CORRECTLY_PROGRAMMED in the extended CSD. In case the number of sectors which were downloaded successfully is zero the host should re-start downloading the new firmware bundle from its first sector. In case the number of sectors which were downloaded successfully is positive the host should continue the download from the next sector, which would resume the firmware download operation. In case MODE_OPERATION_CODES field is not supported by the device the host sets to NORMAL state and initiates a CMD0/HW_Reset/Power cycle to install the new firmware. In such case the device doesn’t need to use NUMBER_OF_FW_SECTORS_CORRECTLY_PROGRAMMED. In both cases occurrence of a CMD0/HW_Reset/Power occurred before the host successfully downloaded the new firmware bundle to the device may cause the firmware download process to be aborted Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 27 IS21/22TF08G 8.3 Power Off Notification for Sleep The host should notify the device before it powers the device off. This allows the device to better prepare itself for being powered off. Power the device off means to turn off all its power supplies. In particular, the host should issue a power off notification (POWER_OFF_LONG, POWER_OFF_SHORT) if it intends to turn off both VCC and VCCQ power I or it may use to a power off notification (SLEEP_NOTIFICATION) if it intends to turn-off VCC after moving the device to Sleep state. To indicate to the device that power off notification is supported by the host, a supporting host shall first set the POWER_OFF_NOTIFICATION byte in EXT_CSD [34] to POWERED_ON (0x01). To execute a power off, before powering the device down the host will changes the value to either POWER_OFF_SHORT (0x02) or POWER_OFF_LONG (0x03). Host should wait for the busy line to be de-asserted. Once the setting has changed to either 0x02 or 0x03, host may safely power off the device. The host may issue SLEEP_AWAKE (CMD5) to enter or to exit from Sleep state if POWER_OFF_NOTIFICATION byte is set to POWERED_ON. Before moving to Standby state and then to Sleep state, the host sets POWER_OFF_NOTIFICATION to SLEEP_NOTIFICATION and waits for the DAT0 line de-assertion. While in Sleep (slp) state VCC (Memory supply) may be turned off as defined in 4.1.6. Removing power supplies other than VCC while the device is in the Sleep (slp) state may result in undefined device behavior. Before removing all power supplies, the host should transition the device out of Sleep (slp) state back to Transfer state using CMD5 and CMD7 and then execute a power off notification setting POWER_OFF_NOTIFICATION byte to either POWER_OFF_SHORT or POWER_OFF_LONG. If host continues to send commands to the device after switching to the power off setting (POWER_OFF_LONG, POWER_OFF_SHORT or SLEEP_NOTIFICATION) or performs HPI during its busy condition, the device shall restore the POWER_OFF_NOTIFICATION byte to POWERED_ON. If host tries to change POWER_OFF_NOTIFICATION to 0x00 after writing another value there, a SWITCH_ERROR is generated. The difference between the two power-off modes is how urgent the host wants to turn power off. The device should respond to POWER_OFF_SHORT quickly under the generic CMD6 timeout. If more time is acceptable, POWER_OFF_LONG may be used and the device shall respond to it within the POWER_OFF_LONG_TIME timeout. While POWER_OFF_NOTIFICATION is set to POWERED_ON, the device expects the host to host shall: • • • Keep the device power supplies alive (both VCC and VCCQ) and in their active mode Not power off the device intentionally before changing POWER_OFF_NOTIFICATION to either POWER_OFF_LONG or POWER_OFF_SHORT Not power off VCC intentionally before changing POWER_OFF_NOTIFICATION to SLEEP_NOTIFICATION and before moving the device to Sleep state Before moving to Sleep state hosts may set the POWER_OFF_NOTIFICATION byte to SLEEP_NOTIFICATION (0x04) if aware that the device is capable of autonomously initiating background operations for possible performance improvements. Host should wait for the busy line to be de-asserted. Busy line may be asserted up the period defined in SLEEP_NOTIFICATION_TIME byte in EXT_CSD [216]. Once the setting has changed to 0x04 host may set the device into Sleep mode (CMD7+CMD5). After getting out from Sleep the POWER_OFF_NOTIFICATION byte will restore its value to POWERED_ON. HPI may interrupt the SLEEP_NOTIFICATION operation. In that case POWER_OFF_NOTIFICATION byte will restore to POWERED_ON. Integrated Silicon Solution, Inc. – www.issi.com – Rev. A 04/26/2022 28 IS21/22TF08G 8.4 Enhanced User Data Area ISSI eMMC supports Enhanced User Data Area feature which allows the User Data Area of eMMC to be configured as SLC Mode. Therefore, when host set the Enhanced User Data Area, the area will occupy more size of original set up size. The Max Enhanced User Data Area size is defined as - (MAX_ENH_SIZE_MULT x HC_WP_GRP_SIZE x HC_ERASE_GRP_SIZE x 512 KBytes). The Enhanced use data area size is defined as (ENH_SIZE_MULT x HC_WP_GRP_SIZE x HC_ERASE_GRP_SIZE x 512 KBytes). The host shall follow the flow chart of JEDEC spec for configuring the parameters of General Purpose Area Partitions and Enhanced User Data Area. 8.5 Write Cache Cache is a temporary storage space in an eMMC device. The cache should in typical case reduce the access time and increase the speed (compared to an access to the main nonvolatile storage). The cache is not directly accessible by the host. This temporary storage space may be utilized also for some implementation specific operations like as an execution memory for the memory controller and/or as storage for an address mapping table etc. However, there is data inconsistence risk when using nonvolatile cache. It’s recommend only turning on the cache for the application which requires not too high reliability. The cache shall be OFF by default after power up, RST_n assertion or CMD0. All accesses shall be directed to the nonvolatile storage like defined elsewhere in this specification. The cache function can be turned ON and OFF by writing to the CACHE_CTRL byte (EXT_CSD byte [33]). Turning the cache ON shall enable behavior model defined in this section. Turning the cache OFF shall trigger flushing of the data to the nonvolatile storages 8.6 Cache Enhancement Barrier Barrier function provides a way to perform a delayed in-order flushing of a cached data. The main motivation for using barrier commands is to avoid the long delay that is introduced by flush commands. There are cases where the host is not interested in flushing the data right away, however it would like to keep an order between different cached data batches. The barrier command enables the host achieving the in-order goal but without paying the flush delay, since the real flushing can be delayed by the device to some later idle time. The formal definition of the barrier rule is as follows: Denote a sequence of requests Ri, i=0,..,N. Assuming a barrier is set between requests Rx and Rx+1 (0
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