IS25LP032D
IS25WP032D
32Mb
SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI &
QUAD I/O QPI DTR INTERFACE
DATA SHEET
IS25LP032D
IS25WP032D
32Mb
SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI &
QUAD I/O QPI DTR INTERFACE
FEATURES
• Industry Standard Serial Interface
- IS25LP032D: 32Mbit/4Mbyte
- IS25WP032D: 32Mbit/4Mbyte
- 256 bytes per Programmable Page
- Supports standard SPI, Fast, Dual, Dual
I/O, Quad, Quad I/O, SPI DTR, Dual I/O
DTR, Quad I/O DTR, and QPI
- Supports Serial Flash Discoverable
Parameters (SFDP)
• Low Power with Wide Temp. Ranges
- Single Voltage Supply
IS25LP: 2.30V to 3.60V
IS25WP: 1.65V to 1.95V
- 4 mA Active Read Current (typ.)
- 10 µA Standby Current (typ.)
- 1 µA Deep Power Down (typ.)
- Temp Grades:
Extended: -40°C to +105°C
Auto Grade (A3): -40°C to +125°C
• High Performance Serial Flash (SPI)
- 50MHz Normal and 133Mhz Fast Read
- 532 MHz equivalent QPI
- DTR (Dual Transfer Rate) up to 66MHz
- Selectable Dummy Cycles
- Configurable Drive Strength
- Supports SPI Modes 0 and 3
- More than 100,000 Erase/Program Cycles
- More than 20-year Data Retention
• Advanced Security Protection
- Software and Hardware Write Protection
- Power Supply Lock Protect
- 4x256-Byte Dedicated Security Area
with OTP User-lockable Bits
- 128 bit Unique ID for Each Device
(Call Factory)
• Flexible & Efficient Memory Architecture
- Chip Erase with Uniform: Sector/Block
Erase (4/32/64 Kbyte)
- Program 1 to 256 Bytes per Page
- Program/Erase Suspend & Resume
• Efficient Read and Program modes
- Low Instruction Overhead Operations
- Continuous Read 8/16/32/64-Byte
Burst Wrap
- Selectable Burst Length
- QPI for Reduced Instruction Overhead
- AutoBoot Operation
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A14
02/20/2022
• Industry Standard Pin-out & Packages(1)
- B = 8-pin SOIC 208mil
- N = 8-pin SOIC 150mil
- T = 8-contact USON 4x3mm
- E = 8-contact XSON 4x4mm
- K = 8-contact WSON 6x5mm
- L = 8-contact WSON 8x6mm(Call Factory)
- M = 16-pin SOIC 300mil
- G= 24-ball TFBGA 4x6 ARRAY
- H = 24-ball TFBGA 5x5 ARRAY
- KGD (Call Factory)
Notes:
1. Call Factory for other package options available.
2
IS25LP032D
IS25WP032D
GENERAL DESCRIPTION
The IS25LP032D and IS25WP032D Serial Flash memory offers a versatile storage solution with high flexibility and
performance in a simplified pin count package. ISSI’s “Industry Standard Serial Interface” Flash is for systems that
require limited space, a low pin count, and low power consumption. The device is accessed through a 4-wire SPI
Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable
(CE#) pins, which can also be configured to serve as multi-I/O (see pin descriptions).
The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies
of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4) which equates to 66Mbytes/s of
data throughput. The IS25xP series of Flash adds support for DTR (Double Transfer Rate) commands that transfer
addresses and read data on both edges of the clock. These transfer rates can outperform 16-bit Parallel Flash
memories allowing for efficient memory access to support XIP (execute in place) operation.
Initial state of the memory array is erased (all bits are set to 1) when shipped from the factory.
QPI (Quad Peripheral Interface) supports 2-cycle instruction further reducing instruction times. Pages can be
erased in groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sector
and block architecture allows for a high degree of flexibility so that the device can be utilized for a broad variety of
applications requiring solid data retention.
GLOSSARY
Standard SPI
In this operation, a 4-wire SPI Interface is utilized, consisting of Serial Data Input (SI), Serial Data Output (SO),
Serial Clock (SCK), and Chip Enable (CE#) pins. Instructions are sent via the SI pin to encode instructions,
addresses, or input data to the device on the rising edge of SCK. The SO pin is used to read data or to check the
status of the device. This device supports SPI bus operation modes (0, 0) and (1, 1).
Multi I/O SPI
Multi-I/O operation utilizes an enhanced SPI protocol to allow the device to function with Dual Output, Dual Input
and Output, Quad Output, and Quad Input and Output capability. Executing these instructions through SPI mode
will achieve double or quadruple the transfer bandwidth for READ and PROGRAM operations.
QPI
The device supports Quad Peripheral Interface (QPI) operations only when the device is switched from
Standard/Dual/Quad SPI mode to QPI mode using the enter QPI (35h) instruction. The typical SPI protocol requires
that the byte-long instruction code being shifted into the device only via SI pin in eight serial clocks. The QPI mode
utilizes all four I/O pins to input the instruction code thus requiring only two serial clocks. This can significantly
reduce the SPI instruction overhead and improve system performance. Only QPI mode or SPI/Dual/Quad mode
can be active at any given time. Enter QPI (35h) and Exit QPI (F5h) instructions are used to switch between these
two modes, regardless of the non-volatible Quad Enable (QE) bit status in the Status Register. Power Reset or
Software Reset will return the device into the standard SPI mode. SI and SO pins become bidirectional I/O0 and
I/O1, and WP# and HOLD# pins become I/O2 and I/O3 respectively during QPI mode.
DTR
In addition to SPI and QPI features, the device also supports Fast READ DTR operation. Fast READ DTR operation
allows high data throughput while running at lower clock frequencies. Fast READ DTR operation uses both rising
and falling edges of the clock for address inputs, and data outputs, resulting in reducing input and output cycles by
half.
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IS25LP032D
IS25WP032D
TABLE OF CONTENTS
FEATURES ............................................................................................................................................................ 2
GENERAL DESCRIPTION .................................................................................................................................... 3
TABLE OF CONTENTS ......................................................................................................................................... 4
1.
PIN CONFIGURATION ................................................................................................................................... 7
2.
PIN DESCRIPTIONS ...................................................................................................................................... 9
3.
BLOCK DIAGRAM ........................................................................................................................................ 11
4.
SPI MODES DESCRIPTION ........................................................................................................................ 12
5.
SYSTEM CONFIGURATION ........................................................................................................................ 14
5.1 BLOCK/SECTOR ADDRESSES ............................................................................................................ 14
5.2 Serial Flash Discoverable Parameters ................................................................................................... 15
6.
REGISTERS ................................................................................................................................................. 20
6.1 STATUS REGISTER .............................................................................................................................. 20
6.2 FUNCTION REGISTER .......................................................................................................................... 24
6.3 READ REGISTER AND EXTENDED REGISTER.................................................................................. 25
6.4 AUTOBOOT REGISTER ........................................................................................................................ 29
7.
PROTECTION MODE................................................................................................................................... 30
7.1 HARDWARE WRITE PROTECTION...................................................................................................... 30
7.2 SOFTWARE WRITE PROTECTION ...................................................................................................... 30
8.
DEVICE OPERATION .................................................................................................................................. 31
8.1 NORMAL READ OPERATION (NORD, 03h) ......................................................................................... 34
8.2 FAST READ OPERATION (FRD, 0Bh) .................................................................................................. 36
8.3 HOLD OPERATION ................................................................................................................................ 38
8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh) ............................................................................. 38
8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh) ..................................................................... 41
8.6 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh).................................................................... 42
8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh) ............................................................................ 44
8.8 PAGE PROGRAM OPERATION (PP, 02h) ............................................................................................ 48
8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h) .......................................................... 50
8.10 ERASE OPERATION ........................................................................................................................... 51
8.11 SECTOR ERASE OPERATION (SER, D7h/20h) ................................................................................. 52
8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h) .............................................................. 53
8.13 CHIP ERASE OPERATION (CER, C7h/60h) ....................................................................................... 55
8.14 WRITE ENABLE OPERATION (WREN, 06h) ...................................................................................... 56
8.15 WRITE DISABLE OPERATION (WRDI, 04h) ....................................................................................... 57
8.16 READ STATUS REGISTER OPERATION (RDSR, 05h) ..................................................................... 58
8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h) ................................................................... 59
8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h) ................................................................. 60
8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)............................................................... 61
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IS25WP032D
8.20 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QPIEN, 35h; QPIDI, F5h) .. 62
8.21 PROGRAM/ERASE SUSPEND & RESUME........................................................................................ 63
8.22 ENTER DEEP POWER DOWN (DP, B9h) ........................................................................................... 65
8.23 RELEASE DEEP POWER DOWN (RDPD, ABh) ................................................................................. 66
8.24 SET READ PARAMETERS OPERATION (SRPNV: 65h, SRPV: C0h/63h) ........................................ 67
8.25 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h) ...................... 69
8.26 READ READ PARAMETERS OPERATION (RDRP, 61h) ................................................................... 70
8.27 READ EXTENDED READ PARAMETERS OPERATION (RDERP, 81h) ............................................ 71
8.28 CLEAR EXTENDED READ PARAMETERS OPERATION (CLERP, 82h) .......................................... 72
8.29 READ PRODUCT IDENTIFICATION (RDID, ABh) .............................................................................. 73
8.30 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh) .. 75
8.31 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h) .......................... 76
8.31 READ UNIQUE ID NUMBER (RDUID, 4Bh) ........................................................................................ 77
8.32 READ SFDP OPERATION (RDSFDP, 5Ah) ........................................................................................ 78
8.33 NO OPERATION (NOP, 00h) ............................................................................................................... 78
8.34 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE
RESET .......................................................................................................................................................... 79
8.35 SECURITY INFORMATION ROW........................................................................................................ 80
8.36 INFORMATION ROW ERASE OPERATION (IRER, 64h) ................................................................... 81
8.37 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) ............................................................... 82
8.38 INFORMATION ROW READ OPERATION (IRRD, 68h) ..................................................................... 83
8.39 FAST READ DTR MODE OPERATION In SPI MODE (FRDTR, 0Dh) ................................................ 84
8.40 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh) .................................................... 86
8.41 FAST READ QUAD I/O DTR MODE OPERATION In SPI MOde (FRQDTR, EDh) ............................ 89
8.42 SECTOR LOCK/UNLOCK FUNCTIONS .............................................................................................. 93
8.43 AUTOBOOT .......................................................................................................................................... 95
9.
ELECTRICAL CHARACTERISTICS............................................................................................................. 99
9.1 ABSOLUTE MAXIMUM RATINGS (1) ..................................................................................................... 99
9.2 OPERATING RANGE ............................................................................................................................. 99
9.3 DC CHARACTERISTICS ...................................................................................................................... 100
9.4 AC MEASUREMENT CONDITIONS .................................................................................................... 101
9.5 PIN CAPACITANCE ............................................................................................................................. 101
9.6 AC CHARACTERISTICS ...................................................................................................................... 102
9.7 SERIAL INPUT/OUTPUT TIMING ........................................................................................................ 104
9.8 POWER-UP AND POWER-DOWN ...................................................................................................... 107
9.9 PROGRAM/ERASE PERFORMANCE ................................................................................................. 108
9.10 RELIABILITY CHARACTERISTICS ................................................................................................... 108
10.
PACKAGE TYPE INFORMATION ......................................................................................................... 109
10.1 8-Pin JEDEC 208mil Broad Small Outline Integrated Circuit (SOIC) Package (B) ............................ 109
10.2 8-Pin JEDEC 150mil Broad Small Outline Integrated Circuit (SOIC) Package (N) ............................ 110
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IS25WP032D
10.3 8-Contact Ultra-Thin Small Outline No-Lead (USON) Package 4x3mm (T)....................................... 111
10.4 8-Contact Ultra-Thin Small Outline No-Lead (WSON) Package 6x5mm (K) ..................................... 112
10.5 8-Contact Ultra-Thin Small Outline No-Lead (WSON) Package 8x6mm (L) ...................................... 113
10.6 16-Pin JEDEC 300mil Small Outline Integrated Circuit (SOIC) Package (M) .................................... 114
10.7 24-Ball Thin Profile Fine Pitch BGA 6x8mm 4x6 array (G) ................................................................ 115
10.8 24-Ball Thin Profile Fine Pitch BGA 6x8mm 5x5 array (H) ................................................................. 116
10.9 8-Contact Extremely-Thin Small Outline No-Lead (XSON) Package 4x4mm (E) .............................. 117
11.
ORDERING INFORMATION - Valid Part Numbers............................................................................... 118
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IS25WP032D
1. PIN CONFIGURATION
CE#
1
SO (IO1)
2
3
WP# (IO2)
4
GND
8
Vcc
7
HOLD# or
(1)
RESET# (IO3)
6
5
SCK
CE#
1
8 Vcc
SO (IO1)
2
7 RESET# (IO3)(1)
WP# (IO2)
3
6 SCK
GND
4
5 SI (IO0)
HOLD# or
SI (IO0)
8-pin WSON 8x6mm (Package: L)
8-pin WSON 6x5mm (Package: K)
8-pin XSON 4x4mm (Package: E)
8-pin USON 4x3mm (Package: T)
8-pin SOIC 208mil (Package: B)
8-pin SOIC 150mil (Package: N)
(1)
HOLD# or RESET#
(IO3)
1
Vcc
2
16
F1
NC
SCK
15
SI (IO0)
RESET#/NC
3
14
NC
NC
4
13
NC
NC
5
12
NC
NC
6
11
NC
CE#
7
10
GND
SO (IO1)
8
9
WP# (IO2)
16-pin SOIC 300mil (Package: M)
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IS25LP032D
IS25WP032D
Top View, Balls Facing Down
Top View, Balls Facing Down
A1
A2
A3
A3
NC
NC
NC
A4
RESET#/NC
B1
B2
B3
B4
NC
SCK
GND
VCC
C1
C2
C3
C4
NC
CE#
NC
WP#(IO2)
D1
D2
D3
D4
NC
SO(IO1)
SI(IO0)
HOLD# or
RESET# (IO3)
(1)
E1
E2
E3
E4
NC
NC
NC
NC
F1
F2
F3
F4
NC
NC
NC
NC
24-ball TFBGA 6x8mm (4x6 ball array)
(Package: G)
Note:
1.
A2
A3
A3
A4
A5
NC
NC
RESET#/NC
NC
B1
B2
B3
B4
B5
NC
SCK
GND
VCC
NC
C1
C2
C3
C4
C5
NC
CE#
NC
WP#(IO2)
NC
D1
D2
D3
D4
NC
SO(IO1)
SI(IO0)
HOLD# or
RESET# (IO3)
NC
D5
E1
E2
E3
E4
E5
NC
NC
NC
NC
NC
(1)
24-ball TFBGA 6x8mm (5x5 ball array)
(Package: H)
The pin can be configured as Hold# or Reset# by setting P7 bit of the Read Register. Pin default is Hold# (IO3).
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IS25LP032D
IS25WP032D
2. PIN DESCRIPTIONS
SYMBOL
TYPE
DESCRIPTION
Chip Enable: The Chip Enable (CE#) pin enables and disables the devices
operation. When CE# is high the device is deselected and output pins are in a high
impedance state. When deselected the devices non-critical internal circuitry power
down to allow minimal levels of power consumption while in a standby state.
CE#
INPUT
When CE# is pulled low the device will be selected and brought out of standby mode.
The device is considered active and instructions can be written to, data read, and
written to the device. After power-up, CE# must transition from high to low before a
new instruction will be accepted.
Keeping CE# in a high state deselects the device and switches it into its low power
state. Data will not be accepted when CE# is high.
SI (IO0),
SO (IO1)
INPUT/OUTPUT
Serial Data Input, Serial Output, and IOs (SI, SO, IO0, and IO1):
This device supports standard SPI, Dual SPI, and Quad SPI operation. Standard SPI
instructions use the unidirectional SI (Serial Input) pin to write instructions,
addresses, or data to the device on the rising edge of the Serial Clock (SCK).
Standard SPI also uses the unidirectional SO (Serial Output) to read data or status
from the device on the falling edge of the serial clock (SCK).
In Dual and Quad SPI mode, SI and SO become bidirectional IO pins to write
instructions, addresses or data to the device on the rising edge of the Serial Clock
(SCK) and read data or status from the device on the falling edge of SCK. Quad
SPI instructions use the WP# and HOLD# pins as IO2 and IO3 respectively.
WP# (IO2)
INPUT/OUTPUT
Write Protect/Serial Data IO (IO2): The WP# pin protects the Status Register from
being written in conjunction with the SRWD bit. When the SRWD is set to “1” and the
WP# is pulled low, the Status Register bits (SRWD, QE, BP3, BP2, BP1, BP0) are
write-protected and vice-versa for WP# high. When the SRWD is set to “0”, the Status
Register is not write-protected regardless of WP# state.
When the QE bit is set to “1”, the WP# pin (Write Protect) function is not available
since this pin is used for IO2.
HOLD# or RESET#/Serial Data IO (IO3): When the QE bit of Status Register is set
to “1”, HOLD# pin or RESET# is not available since it becomes IO3.
Most packages except for 16-pin SOIC and 24-ball BGA:
When QE=0, the pin acts as HOLD# or RESET# and either one can be selected by
the P7 bit setting in Read Register. HOLD# will be selected if P7=0 (Default) and
RESET# will be selected if P7=1.
16-pin SOIC and 24-ball BGA packages :
HOLD# (IO3)
or
RESET# (IO3)
-
When QE=0 and Dedicated RESET# is Enabled (Default), the pin acts as
HOLD# regardless of the P7 bit setting in Read Register.
-
When QE=0 and Dedicated RESET# is Disabled, the pin acts as HOLD# or
RESET# and either one can be selected by the P7 bit setting in Read Register.
HOLD# will be selected if P7=0 (Default) and RESET# will be selected if P7=1.
INPUT/OUTPUT
The HOLD# pin allows the device to be paused while it is selected. It pauses serial
communication by the master device without resetting the serial sequence. The
HOLD# pin is active low. When HOLD# is in a low state and CE# is low, the SO pin
will be at high impedance. Device operation can resume when HOLD# pin is brought
to a high state.
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IS25LP032D
IS25WP032D
SYMBOL
TYPE
DESCRIPTION
RESET#: This dedicated RESET# is available in 16-pin SOIC and 24-ball BGA
packages.
RESET#
INPUT/OUTPUT
SCK
INPUT
Vcc
POWER
GND
GROUND
NC
Unused
The RESET# pin is a hardware RESET signal. When RESET# is driven HIGH, the
memory is in the normal operating mode. When RESET# is driven LOW, the memory
enters reset mode and output is High-Z. If RESET# is driven LOW while an internal
WRITE, PROGRAM, or ERASE operation is in progress, data may be lost.
Dedicated RESET# function can be Disabled when bit 0 of Function Register = 1.
It has an internal pull-up resistor and may be left floating if not used.
Serial Data Clock: Synchronized Clock for input and output timing operations.
Power: Device Core Power Supply
Ground: Connect to ground when referenced to Vcc
NC: Pins labeled “NC” stand for “No Connect”. Not internally connected.
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IS25LP032D
IS25WP032D
3. BLOCK DIAGRAM
Control Logic
High Voltage Generator
Status
Register
I/O Buffers and
Data Latches
256 Bytes
Page Buffer
SCK
WP#
(IO2)
SI
(IO0)
SO
(IO1)
(1)
HOLD# (IO3)
Serial Peripheral Interface
CE#
X-Decoder
RESET#
Y-Decoder
Memory Array
Address Latch &
Counter
Note:
1: In case of 16-pin SOIC or 24-ball TFBFA, when QE=0 and Dedicated RESET# is Disabled, the pin acts as HOLD# or
RESET# and either one can be selected by the P7 bit setting in Read Register. HOLD# will be selected if P7=0
(Default) and RESET# will be selected if P7=1.
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IS25LP032D
IS25WP032D
4. SPI MODES DESCRIPTION
Multiple IS25LP032D devices or multiple IS25WP032D devices can be connected on the SPI serial bus and
controlled by a SPI Master, i.e. microcontroller, as shown in Figure 4.1. The devices support either of two SPI
modes:
Mode 0 (0, 0)
Mode 3 (1, 1)
The difference between these two modes is the clock polarity. When the SPI master is in stand-by mode, the serial
clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer to Figure
4.2 and Figure 4.3 for SPI and QPI mode. In both modes, the input data is latched on the rising edge of Serial Clock
(SCK), and the output data is available from the falling edge of SCK.
Figure 4.1 Connection Diagram among SPI Master and SPI Slaves (Memory Devices)
SDO
SPI interface with
(0,0) or (1,1)
SDI
SCK
SCK SO
SI
SCK SO
SI
SCK SO
SI
SPI Master
(i.e. Microcontroller)
CS3
CS2
SPI
Memory
Device
CS1
SPI
Memory
Device
CE#
CE#
WP#
HOLD#
or RESET#
SPI
Memory
Device
CE#
WP# HOLD#
or RESET#
WP# HOLD#
or RESET#
Notes:
1. In case of 16-pin SOIC and 24-ball TFBGA, dedicated RESET# is supported.
2. SI and SO pins become bidirectional IO0 and IO1 respectively during Dual I/O mode and SI, SO, WP#, and HOLD#
pins become bidirectional IO0, IO1, IO2, and IO3 respectively during Quad I/O or QPI mode.
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IS25LP032D
IS25WP032D
Figure 4.2 SPI Mode Support
CPOL CPHA
Shift in
(Mode 0)
0
0
SCK
(Mode 3)
1
1
SCK
SI
Shift out
LSB IN
MSB IN
SO
LSB OUT
MSB OUT
Figure 4.3 QPI Mode Support
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Mode 0
3-byte Address
Mode Bits
Data 1
Data 2
Data 3
IO0
C4
C0
20
16
12
8
4
0
4
0
4
0
4
0
4
0
...
IO1
C5
C1
21
17
13
9
5
1
5
1
5
1
5
1
5
1
...
IO2
C6
C2
22
18
14
10
6
2
6
2
6
2
6
2
6
2
...
IO3
C71
C3
23 1
19
15
11
7
3
71
3
71
3
71
3
71
3
...
Note1: MSB (Most Significant Bit)
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IS25LP032D
IS25WP032D
5. SYSTEM CONFIGURATION
The memory array is divided into uniform 4 Kbyte sectors or uniform 32/64 Kbyte blocks (a block consists of
eight/sixteen adjacent sectors respectively).
Table 5.1 illustrates the memory map of the device. The Status Register controls how the memory is protected.
5.1 BLOCK/SECTOR ADDRESSES
Table 5.1 Block/Sector Addresses
Memory
Density
Block No.
(64Kbyte)
Block No.
(32Kbyte)
Block 0
Block 0
Block 1
Block 2
Block 1
Block 3
Block 4
Block 2
Block 5
:
:
Block 30
32Mb
Block 15
Block 31
:
:
Block 62
Block 31
Block 63
:
:
Block 124
Block 62
Block 125
Block 126
Block 63
Block 127
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Sector No.
Sector Size
(Kbyte)
Address Range
Sector 0
4
000000h – 000FFFh
:
:
:
:
:
:
Sector 15
4
00F000h – 00FFFFh
Sector 16
4
010000h – 010FFFh
:
:
:
:
:
:
Sector 31
4
01F000h – 01FFFFh
Sector 32
4
020000h – 020FFFh
:
:
:
:
:
:
Sector 47
4
02F000h – 02FFFFh
:
:
:
Sector 240
4
0F0000h – 0F0FFFh
:
:
:
:
:
:
Sector 255
4
0FF000h – 0FFFFFh
:
:
:
Sector 496
4
1F0000h – 1F0FFFh
:
:
:
:
:
:
Sector 511
4
1FF000h – 1FFFFFh
:
:
:
Sector 992
4
3E0000h – 3E0FFFh
:
:
:
:
:
:
Sector 1007
4
3EF000h – 3EFFFFh
Sector 1008
4
3F0000h – 3F0FFFh
:
:
:
:
:
:
Sector 1023
4
3FF000h – 3FFFFFh
14
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5.2 SERIAL FLASH DISCOVERABLE PARAMETERS
The Serial Flash Discoverable Parameters (SFDP) standard defines the structure of the SFDP database within the
memory device. SFDP is the standard of JEDEC JESD216.
The JEDEC-defined header with Parameter ID FF00h and related Basic Parameter Table is mandatory. Additional
parameter headers and tables are optional.
Table 5.2 Signature and Parameter Identification Data Values
Description
SFDP Signature
SFDP Revision
Number of Parameter Headers (NPH)
Unused
Parameter ID LSB
Parameter Minor Revision
Parameter Major Revision
Parameter Table Length (in DWPRDs)
Basic Flash Parameter Table Pointer (PTP)
Parameter ID MSB
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Minor
Major
Address
(Byte)
00h
01h
02h
03h
04h
05h
06h
07h
08h
09h
0Ah
0Bh
0Ch
0Dh
0Eh
0Fh
Address
(Bit)
7:0
15:8
23:16
31:24
7:0
15:8
23:16
31:24
7:0
15:8
23:16
31:24
7:0
15:8
23:16
31:24
15
Data
53h
46h
44h
50h
06h
01h
00h
FFh
00h
06h
01h
10h
30h
00h
00h
FFh
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Table 5.3 JEDEC Basic Flash Parameter Table
Description
Minimum Sector Erase Sizes
Write Granularity
Volatile Status Register Block Protect bits
Write Enable Instruction Select for writing to Volatile Status
Register
Unused
4KB Erase Instruction
Supports (1-1-2) Fast Read
Address Bytes
Supports Double Transfer Rate (DTR) Clocking
Supports (1-2-2) Fast Read
Supports (1-4-4) Fast Read
Supports (1-1-4) Fast Read
Unused
Reserved
Flash memory Density (bits)
1-4-4 Fast Read Wait Cycle Count
1-4-4 Fast Read Mode bit Cycle Count
1-4-4 Fast Read Instruction
1-1-4 Fast Read Wait Cycle Count
1-1-4 Fast Read Mode bit Cycle Count
1-1-4 Fast Read Instruction
1-1-2 Fast Read Wait Cycle Count
1-1-2 Fast Read Mode bit Cycle Count
1-1-2 Fast Read Instruction
1-2-2 Fast Read Wait Cycle Count
1-2-2 Fast Read Mode bit Cycle Count
1-2-2 Fast Read Instruction
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Address
(Byte)
30h
Address
(Bit)
1:0
2
3
Data
01b
1b
0b
4
0b
33h
7:5
15:8
16
18:17
19
20
21
22
23
31:24
111b
20h
1b
00b
1b
1b
1b
1b
1b
FFh
34h
35h
36h
37h
7:0
15:8
23:16
31:24
FFh
FFh
FFh
01h
4:0
7:5
15:8
20:16
23:21
31:24
00100b
010b
EBh
01000b
000b
6Bh
4:0
7:5
15:8
20:16
23:21
31:24
01000b
000b
3Bh
00000b
100b
BBh
31h
32h
38h
39h
3Ah
3Bh
3Ch
3Dh
3Eh
3Fh
16
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Table 5.3 JEDEC Basic Flash Parameter Table (Continued)
Address
(Bit)
0
3:1
4
7:5
31:8
0
111b
1
111b
FFFFFFh
15:0
20:16
23:21
31:24
FFFFh
00000b
000b
FFh
4Bh
15:0
20:16
23:21
31:24
FFFFh
00100b
010b
EBh
Erase Type 1 Size (4KB)
Erase Type 1 Instruction
Erase Type 2 Size (32KB)
Erase Type 2 Instruction
4Ch
4Dh
4Eh
4Fh
7:0
15:8
23:16
31:24
0Ch
20h
0Fh
52h
Erase Type 3 Size (64KB)
Erase Type 3 Instruction
Erase Type 4 Size (256KB)
Erase Type 4 Instruction
50h
51h
52h
53h
7:0
15:8
23:16
31:24
10h
D8h
00h
FFh
57:54h
3:0
8:4
10:9
15:11
17:16
22:18
24:23
29:25
31:30
0011b
00100b
01b
00110b
01b
01001b
01b
00000b
00b
Description
Supports (2-2-2) Fast Read
Reserved
Supports (4-4-4) Fast Read
Reserved
Reserved
Address
(Byte)
40h
43:41h
Reserved
2-2-2 Fast Read Wait Cycle Count
2-2-2 Fast Read Mode bit Cycle Count
2-2-2 Fast Read Instruction
45:44h
Reserved
4-4-4 Fast Read Wait Cycle Count
4-4-4 Fast Read Mode bit Cycle Count
4-4-4 Fast Read Instruction
49:48h
46h
47h
4Ah
Multiplier from typical erase time to maximum erase time
Sector Type 1 ERASE time (typ)
Sector Type 2 ERASE time (typ)
Sector Type 3 ERASE time (typ)
Sector Type 4 ERASE time (typ)
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Data
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Table 5.3 JEDEC Basic Flash Parameter Table (Continued)
Description
Multiplier from typical time to maximum time for page or byte
PROGRAM
Page size
Address
(Byte)
58h
Page Program Typical time
Byte Program Typical time, first byte
5Ah:59h
Byte Program Typical time, additional byte
Chip Erase, Typical time
Units
Reserved
Prohibited Operations During Program Suspend
Prohibited Operations During Erase Suspend
Reserved
Program Resume to Suspend Interval
Suspend in-progress program max latency
5Bh
5Ch
5Eh:5Dh
Erase Resume to Suspend Interval
Suspend in-progress erase max latency
5Fh
Suspend /Resume supported
Address
(Bit)
Data
3:0
0010b
7:4
12:8
13
17:14
18
22:19
23
28:24
30:29
31
1000b
11000b
0b
0111b
0b
0000b
0b
00001b
10b
1b
3:0
7:4
8
12:9
17:13
19:18
23:20
28:24
30:29
31
1100b
1110b
1b
0110b
01100b
10b
0110b
01100b
10b
0b
Program Resume Instruction
Program Suspend Instruction
Resume Instruction
Suspend Instruction
60h
61h
62h
63h
7:0
15:8
23:16
31:24
7Ah
75h
7Ah
75h
Reserved
Status Register Polling Device Busy
64h
1:0
7:2
11b
111101b
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Table 5.3 JEDEC Basic Flash Parameter Table (Continued)
Address
(Byte)
Description
Exit Deep Power-down to next operation delay
3V
1.8V
Exit Deep Power-down to next operation delay Units
Exit Deep Power-down Instruction
Enter Deep Power-down Instruction
Deep Power-down Supported
4-4-4 mode disable sequences (QPIDI)
4-4-4 mode enable sequences (QPIEN)
0-4-4 Mode Supported
0-4-4 Mode Exit Method
0-4-4 Mode Entry Method:
Quad Enable Requirements (QER)
Hold or RESET Disable
Reserved
Volatile or Non-Volatile Register and Write Enable (WREN)
Instruction for Status Register 1
Reserved
Soft Reset and Rescue Sequence Support
Exit 4-Byte Addressing
Enter 4-Byte Addressing
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Address
(Bit)
14:13
22:15
30:23
31
00010b
00100b
01b
ABh
B9h
0b
3:0
8:4
9
15:10
19:16
22:20
23
31:24
1010b
00100b
1b
110000b
1100b
010b
0b
FFh
6:0
1100001b
7
13:8
1b
110000b
110000000
0b
10000000b
12:8
67h:65h
69h:68h
6Ah
6Bh
6Ch
6Eh:6Dh
6Fh
Data
23:14
31:24
19
IS25LP032D
IS25WP032D
6. REGISTERS
The device has various sets of Registers: Status, Function, Read, Extended Read and Autoboot.
When the register is read continuously, the same data is output repeatedly until CE# goes HIGH.
6.1 STATUS REGISTER
Status Register Format and Status Register Bit Definitions are described in Table 6.1 & Table 6.2.
Table 6.1 Status Register Format
Default
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
SRWD
QE
BP3
BP2
BP1
BP0
WEL
WIP
0
0
0
0
0
0
0
0
Table 6.2 Status Register Bit Definition
Bit
Name
Bit 0
WIP
Bit 1
WEL
Bit 2
BP0
Bit 3
BP1
Bit 4
BP2
Bit 5
BP3
Bit 6
QE
Bit 7
SRWD
Definition
Write In Progress Bit:
"0" indicates the device is ready(default)
"1" indicates a write cycle is in progress and the device is busy
Write Enable Latch:
"0" indicates the device is not write enabled (default)
"1" indicates the device is write enabled
Block Protection Bit: (See Table 6.4 for details)
"0" indicates the specific blocks are not write-protected (default)
"1" indicates the specific blocks are write-protected
Quad Enable bit:
“0” indicates the Quad output function disable (default)
“1” indicates the Quad output function enable
Status Register Write Disable: (See Table 7.1 for details)
"0" indicates the Status Register is not write-protected (default)
"1" indicates the Status Register is write-protected
Read/Write
Type
R
Volatile
R/W1
Volatile
R/W
Non-Volatile
R/W
Non-Volatile
R/W
Non-Volatile
Note1: WEL bit can be written by WREN and WRDI commands, but cannot by WRSR command.
The BP0, BP1, BP2, BP3, QE, and SRWD are non-volatile memory cells that can be written by a Write Status
Register (WRSR) instruction. The default value of the BP0, BP1, BP2, BP3, QE, and SRWD bits were set to “0” at
factory. The Status Register can be read by the Read Status Register (RDSR).
The function of Status Register bits are described as follows:
WIP bit: Write In Progress (WIP) is read-only, and can be used to detect the progress or completion of a Program,
Erase, or Write/Set Non-Volatile/OTP Register operation. WIP is set to “1” (busy state) when the device is executing
the operation. During this time the device will ignore further instructions except for Read Status/Function/Extended
Read Register and Software/Hardware Reset instructions. In addition to the instructions, an Erase/Program
Suspend instruction also can be executed during a Program or an Erase operation. When an operation has
completed, WIP is cleared to “0” (ready state) whether the operation is successful or not and the device is ready
for further instructions.
WEL bit: Write Enable Latch (WEL) indicates the status of the internal write enable latch. When WEL is “0”, the
internal write enable latch is disabled and the write operations described in Table 6.3 are inhibited. When WEL is
“1”, the Write operations are allowed. WEL bit is set by a Write Enable (WREN) instruction. Each Write Non-Volatile
Register, Program and Erase instruction must be preceded by a WREN instruction. The volatile register related
commands such as the Set Volatile Read Register and the Set Volatile Extended Read Register don’t require to
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set WEL to “1". WEL can be reset by a Write Disable (WRDI) instruction. It will automatically reset after the
completion of any Write operation.
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Table 6.3 Instructions requiring WREN instruction ahead
Instructions must be preceded by the WREN instruction
Name
PP
Hex Code
Operation
02h
Serial Input Page Program
PPQ
32h/38h
Quad Input Page Program
SER
D7h/20h
Sector Erase 4KB
BER32 (32KB)
52h
Block Erase 32KB
BER64 (64KB)
D8h
Block Erase 64KB
CER
C7h/60h
Chip Erase
WRSR
01h
Write Status Register
WRFR
42h
Write Function Register
SRPNV
65h
Set Read Parameters (Non-Volatile)
SERPNV
85h
Set Extended Read Parameters (Non-Volatile)
IRER
64h
Erase Information Row
IRP
62h
Program Information Row
WRABR
15h
Write AutoBoot Register
BP3, BP2, BP1, BP0 bits: The Block Protection (BP3, BP2, BP1 and BP0) bits are used to define the portion of
the memory area to be protected. Refer to Table 6.4 for the Block Write Protection (BP) bit settings. When a defined
combination of BP3, BP2, BP1 and BP0 bits are set, the corresponding memory area is protected. Any program or
erase operation to that area will be inhibited.
Note: A Chip Erase (CER) instruction will be ignored unless all the Block Protection Bits are “0”s.
SRWD bit: The Status Register Write Disable (SRWD) bit operates in conjunction with the Write Protection (WP#)
signal to provide a Hardware Protection Mode. When the SRWD is set to “0”, the Status Register is not writeprotected. When the SRWD is set to “1” and the WP# is pulled low (VIL), the bits of Status Register (SRWD, QE,
BP3, BP2, BP1, BP0) become read-only, and a WRSR instruction will be ignored. If the SRWD is set to “1” and
WP# is pulled high (VIH), the Status Register can be changed by a WRSR instruction.
QE bit: The Quad Enable (QE) is a non-volatile bit in the Status Register that allows quad operation. When the QE
bit is set to “0”, the pin WP# and HOLD#/RESET# are enabled. When the QE bit is set to “1”, the IO2 and IO3 pins
are enabled.
WARNING: The QE bit must be set to 0 if WP# or HOLD#/RESET# pin is tied directly to the power supply.
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Table 6.4 Block (64Kbyte) assignment by Block Write Protect (BP) Bits
Status Register Bits
Protected Memory Area
BP3
BP2
BP1
BP0
0
0
0
0
None
0
0
0
1
1 block : 63
0
0
1
0
2 blocks : 62 - 63
0
0
1
1
4 blocks : 60 - 63
0
1
0
0
8 blocks : 56 - 63
0
1
0
1
16 blocks : 48 - 63
0
1
1
0
32 blocks : 32 - 63
0
1
1
1
1
0
0
0
1
0
0
1
32 blocks : 0 - 31
1
0
1
0
16 blocks : 0 - 15
1
0
1
1
8 blocks : 0 - 7
1
1
0
0
4 blocks 0 - 3
1
1
0
1
2 blocks : 0 - 1
1
1
1
0
1 block : 0
1
1
1
1
None
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All Blocks
23
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6.2 FUNCTION REGISTER
Function Register Format and Bit definition are described in Table 6.5 and Table 6.6.
Table 6.5 Function Register Format
Default
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
IRL3
IRL2
IRL1
IRL0
ESUS
PSUS
Reserved
0
0
0
0
0
0
0
Bit 0
Dedicated
RESET# Disable
0 or 1
Table 6.6 Function Register Bit Definition
Bit
Name
Bit 0
Dedicated
RESET# Disable
Bit 1
Reserved
Bit 2
PSUS
Bit 3
ESUS
Bit 4
IR Lock 0
Bit 5
IR Lock 1
Bit 6
IR Lock 2
Bit 7
IR Lock 3
Definition
Dedicated RESET# Disable bit
“0” indicates Dedicated RESET# was enabled
“1” indicates Dedicated RESET# was disabled
Reserved
Program suspend bit:
“0” indicates program is not suspend
“1” indicates program is suspend
Erase suspend bit:
"0" indicates Erase is not suspend
"1" indicates Erase is suspend
Lock the Information Row 0:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 1:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 2:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 3:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Read
/Write
Type
R/W for 0
R only for 1
OTP
R
Reserved
R
Volatile
R
Volatile
R/W
OTP
R/W
OTP
R/W
OTP
R/W
OTP
Note: Once OTP bits of Function Register are written to “1”, it cannot be modified to “0” any more.
Dedicated RESET# Disable bit: The default status of the bit is dependent on part number. The device with
dedicated RESET# can be programmed to “1” to disable dedicated RESET# function to move RESET# function to
Hold#/RESET# pin (or ball). So the device with dedicated RESET# can be used for dedicated RESET# application
and HOLD#/RESET# application.
PSUS bit: The Program Suspend Status bit indicates when a Program operation has been suspended. The PSUS
changes to “1” after a suspend command is issued during the program operation. Once the suspended Program
resumes, the PSUS bit is reset to “0”.
ESUS bit: The Erase Suspend Status bit indicates when an Erase operation has been suspended. The ESUS bit
is “1” after a suspend command is issued during an Erase operation. Once the suspended Erase resumes, the
ESUS bit is reset to “0”.
IR Lock bit 0 ~ 3: The default is “0” so that the Information Row can be programmed. If the bit set to “1”, the
Information Row can’t be programmed. Once it sets to “1”, it cannot be changed back to “0” since IR Lock bits are
OTP.
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6.3 READ REGISTER AND EXTENDED REGISTER
Read Register format and Bit definitions are described below. Read Register and Extended Read Register consist
of a pair of rewritable non-volatile register and volatile register, respectively. During power up sequence, volatile
register will be loaded with the value of non-volatile value.
6.3.1 READ REGISTER
Table 6.7 and Table 6.8 define all bits that control features in SPI/QPI modes. HOLD#/RESET# pin selection (P7)
bit is used to select HOLD# pin or RESET# pin in SPI mode when QE=“0” for the device with HOLD#/RESET#.
When QE=1 or in QPI mode, P7 bit setting will be ignored since the pin becomes IO3.
For 16-pin SOIC or 24-ball TFBGA with dedicated RESET# device (Dedicated RESET# Disable bit in Functional
Register is “0”), HOLD# will be selected regardless of P7 bit setting when QE=“0” in SPI mode.
The Dummy Cycle bits (P6, P5, P4, P3) define how many dummy cycles are used during various READ modes.
The wrap selection bits (P2, P1, P0) define burst length with an enable bit.
The SET READ PARAMETERS Operations (SRPNV: 65h, SRPV: C0h or 63h) are used to set all the Read Register
bits, and can thereby define HOLD#/RESET# pin selection, dummy cycles, and burst length with wrap around.
SRPNV is used to set the non-volatile register and SRPV is used to set the volatile register.
Table 6.7 Read Register Parameter Bit Table
Default
P7
HOLD#/
RESET#
0
P6
Dummy
Cycles
0
P5
Dummy
Cycles
0
P4
Dummy
Cycles
0
P3
Dummy
Cycles
0
P2
Wrap
Enable
0
P1
Burst
Length
0
P0
Burst
Length
0
Table 6.8 Read Register Bit Definition
Read/Write
Bit
Name
Definition
P0
Burst Length
Burst Length
R/W
P1
Burst Length
Burst Length
R/W
P2
Burst Length
Set Enable
Burst Length Set Enable Bit:
"0" indicates disable (default)
"1" indicates enable
R/W
P3
Dummy Cycles
P4
Dummy Cycles
P5
Dummy Cycles
P6
Dummy Cycles
P7
HOLD#/
RESET#
Type
Non-Volatile
and Volatile
Non-Volatile
and Volatile
Non-Volatile
and Volatile
Non-Volatile
and Volatile
Non-Volatile
and Volatile
Non-Volatile
and Volatile
Non-Volatile
and Volatile
R/W
Number of Dummy Cycles:
Bits1 to Bit4 can be toggled to select the number of dummy cycles
(1 to 15 cycles)
R/W
R/W
R/W
HOLD#/RESET# pin selection Bit:
"0" indicates the HOLD# pin is selected (default)
"1" indicates the RESET# pin is selected
Non-Volatile
and Volatile
R/W
Table 6.9 Burst Length Data
P1
P0
8 bytes
0
0
16 bytes
0
1
32 bytes
1
0
64 bytes
1
1
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Table 6.10 Wrap Function
Wrap around boundary
P2
Whole array regardless of P1 and P0 value
0
Burst Length set by P1 and P0
1
Table 6.11 Read Dummy Cycles vs Max Frequency
P[6:3]
Dummy
Cycles2,3
1
Fast Read5 Fast Read5
0Bh
0Bh
Fast Read
Dual
Output
3Bh
Fast Read
Dual IO
BBh
Fast Read
Quad
Output
6Bh
Fast Read
Quad IO
EBh
FRDTR
0Dh
FRDDTR
BDh
FRQDTR
EDh
SPI
QPI
SPI
SPI
SPI
SPI, QPI
SPI/QPI
SPI4
SPI, QPI
133MHz
104MHz
133MHz
115MHz
133MHz
104MHz
66/66MHz
66MHz
66MHz
60MHz
66MHz
33MHz
50/20MHz
33MHz
20MHz
0
Default
1
1
84MHz
33MHz
84MHz
2
2
104MHz
50MHz
104MHz
84MHz
80MHz
50MHz
66/33MHz
50MHz
33MHz
3
3
133MHz
60MHz
115MHz
104MHz
90MHz
60MHz
66/46MHz
66MHz
46MHz
4
4
133MHz
70MHz
133MHz
115MHz
104MHz
70MHz
66/60MHz
66MHz
60MHz
5
5
133MHz
84MHz
133MHz
133MHz
115MHz
84MHz
66/66MHz
66MHz
66MHz
6
6
133MHz
104MHz
133MHz
133MHz
133MHz
104MHz
7
7
133MHz
115MHz
(6)
(6)
133MHz
133MHz
133MHz
66/66MHz
66MHz
66MHz
115MHz
(6)
66/66MHz
66MHz
66MHz
(6)
8
8
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
66/66MHz
66MHz
66MHz
9
9
133MHz
133MHz(6
133MHz
133MHz
133MHz
133MHz(6
66/66MHz
66MHz
66MHz
10
10
133MHz
133MHz(6
133MHz
133MHz
133MHz
133MHz(6
66/66MHz
66MHz
66MHz
133MHz
(6)
133MHz
(6)
66/66MHz
66MHz
66MHz
133MHz
(6
66/66MHz
66MHz
66MHz
133MHz
(6
66/66MHz
66MHz
66MHz
(6)
66/66MHz
66MHz
66MHz
(6
66/66MHz
66MHz
66MHz
11
12
13
14
15
11
12
13
14
15
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
(6
(6)
133MHz
(6
133MHz
(6
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
133MHz
Notes:
1. Default dummy cycles are as follows.
Operation
Command
Dummy Cycles
Normal mode
DTR mode
Normal mode
DTR mode
Fast Read (SPI mode)
0Bh
0Dh
8
8
Fast Read (QPI mode)
0Bh
0Dh
6
6
Fast Read Dual Output
3Bh
-
8
-
Fast Read Dual IO SPI
BBh
BDh
4
4
Fast Read Quad Output
6Bh
-
8
-
Fast Read Quad IO (SPI mode)
EBh
EDh
6
6
Fast Read Quad IO (QPI mode)
EBh
EDh
6
6
Comment
RDUID, IRRD instructions are also
applied.
2. Enough number of dummy cycles must be applied to execute properly the AX read operation.
3. Must satisfy bus I/O contention. For instance, if the number of dummy cycles and AX bit cycles are same, then X
must be Hi-Z.
4. QPI mode is not available for FRDDTR command.
5. RDUID, IRRD instructions are also applied.
6. 104MHz for IS25WP032D.
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6.3.2 EXTENDED READ REGISTER
Table 6.12 and Table 6.13 define all bits that control features in SPI/QPI modes. The ODS2, ODS1, ODS0 (EB7,
EB6, EB5) bits provide a method to set and control driver strength. The four bits (EB3, EB2, EB1, EB0) are readonly bits and may be checked to know what the WIP status is or whether there is an error during an Erase, Program,
or Write/Set Register operation. These bits are not affected by SERPNV or SERPV commands. EB4 bit remains
reserved for future use.
The SET EXTENDED READ PARAMETERS Operations (SERPNV: 85h, SERPV: 83h) are used to set all the
Extended Read Register bits, and can thereby define the output driver strength used during READ modes. SRPNV
is used to set the non-volatile register and SRPV is used to set the volatile register.
Table 6.12 Extended Read Register Bit Table
EB7
EB6
EB5
EB4
EB3
EB2
EB1
EB0
ODS2
ODS1
ODS0
Reserved
E_ERR
P_ERR
PROT_E
WIP
1
1
1
1
0
0
0
0
Read/Write
Type
R
Volatile
R
Volatile
R
Volatile
R
Volatile
R
Reserved
Non-Volatile
and Volatile
Non-Volatile
and Volatile
Non-Volatile
and Volatile
Default
Table 6.13 Extended Read Register Bit Definition
Bit
Name
EB0
WIP
EB1
PROT_E
EB2
P_ERR
EB3
E_ERR
EB4
Reserved
EB5
ODS0
EB6
ODS1
EB7
ODS2
Definition
Write In Progress Bit:
Has exactly same function as the bit0 (WIP) of Status Register
“0”: Ready, “1”: Busy
Protection Error Bit:
"0" indicates no error
"1" indicates protection error in an Erase or a Program operation
Program Error Bit:
"0" indicates no error
"1" indicates an Program operation failure or protection error
Erase Error Bit:
"0" indicates no error
"1" indicates a Erase operation failure or protection error
Reserved
R/W
Output Driver Strength:
Output Drive Strength can be selected according to Table 6.14
R/W
R/W
Table 6.14 Driver Strength Table
ODS2
ODS1
ODS0
Description
0
0
0
Reserved
0
0
1
12.50%
0
1
0
25%
0
1
1
37.50%
1
0
0
Reserved
1
0
1
75%
1
1
0
100%
1
1
1
50%
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Remark
Default
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WIP bit: The definition of the WIP bit is exactly same as the one of Status Register.
PROT_E bit: The Protection Error bit indicates whether an Erase or Program operation has attempted to modify a
protected array sector or block, or to access a locked Information Row region. When the bit is set to “1” it indicates
that there was an error or errors in previous Erase or Program operations. See Table 6.15 for details.
P_ERR bit: The Program Error bit indicates whether a Program operation has succeeded or failed, or whether a
Program operation has attempted to program a protected array sector/block or a locked Information Row region.
When the bit is set to “1” it indicates that there was an error or errors in previous Program or Write/Set Non-Volatile
Register operations. See Table 6.15 for details.
E_ERR bit: The Erase Error bit indicates whether an Erase operation has succeeded or failed, or whether an Erase
operation has attempted to erase a protected array sector/block or a locked Information Row region. When the bit
is set to “1” it indicates that there was an error or errors in previous Erase or Write/Set Non-Volatile Register
operations. See Table 6.15 for details.
Table 6.15 Instructions to set PROT_E, P_ERR, or E_ERR bit
Instructions
PP/PPQ
IRP
WRSR/WRABR/SRPNV/
SERPNV
WRFR
SER/BER32K/BER64K/CER/
IRER
Description
The commands will set the P_ERR if there is a failure in the operation. Attempting to program
within the protected array sector/block or within an erase suspended sector/block will result in
a programming error with P_ERR and PROT_E set to “1”.
The command will set the P_ERR if there is a failure in the operation. In attempting to program
within a locked Information Row region, the operation will fail with P_ERR and PROT_E set to
1.
The update process for the non-volatile register bits involves an erase and a program operation
on the non-volatile register bits. If either the erase or program portion of the update fails, the
related error bit (P_ERR or E_ERR) will be set to “1”.
Only for WRSR command, when Status Register is write-protected by SRWD bit and WP# pin,
attempting to write the register will set PROT_E and E_ERR to “1”.
The commands will set the P_ERR if there is a failure in the operation.
The commands will set the E_ERR if there is a failure in the operation. E_ERR and PROT_E
will be set to “1” when the user attempts to erase a protected main memory sector/block or a
locked Information Row region. Chip Erase (CER) command will set E_ERR and PROT_E if
any Block Protection bits (BP3~BP0) are not 0. .
Notes:
1. OTP bits in the Function Register may only be programmed to “1”. Writing of the bits back to “0” is ignored and no
error is set.
2. Read only bits in registers are never modified by a command so that the corresponding bits in the Write/Set Register
command data byte are ignored without setting any error indication.
3. Once the PROT_E, P_ERR, and E_ERR error bits are set to “1”, they remains set to “1” until they are cleared to “0”
with a Clear Extended Read Register (CLERP) command. This means that those error bits must be cleared through
the CLERP command. Alternatively, Hardware Reset, or Software Reset may be used to clear the bits.
4. Any further command will be executed even though the error bits are set to “1”.
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6.4 AUTOBOOT REGISTER
AutoBoot Register Bit (32 bits) Definitions are described in Table 6.15.
Table 6.16 AutoBoot Register Parameter Bit Table
Bits
Symbols
Function
Type
Default
Value
AB[31:24]
ABSA
Reserved
Reserved
00h
AB[23:5]
ABSA
AutoBoot Start
Address
NonVolatile
00000h
AB[4:1]
ABSD
AutoBoot Start
Delay
NonVolatile
0h
AB0
ABE
AutoBoot
Enable
NonVolatile
0
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Description
Reserved for future use
32 byte boundary address for the start of boot code
access
Number of initial delay cycles between CE# going
low and the first bit of boot code being transferred,
and it is the same as dummy cycles of FRD (QE=0)
or FRQIO (QE=1).
Example: The number of initial delay cycles is 8
(QE=0) or 6 (QE=1) when AB[4:1]=0h (Default
setting).
1 = AutoBoot is enabled
0 = AutoBoot is not enabled
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7. PROTECTION MODE
The device supports hardware and software write-protection mechanisms.
7.1 HARDWARE WRITE PROTECTION
The Write Protection (WP#) pin provides a hardware write protection method for BP3, BP2, BP1, BP0, SRWD, and
QE in the Status Register. Refer to the section 6.1 STATUS REGISTER.
Write inhibit voltage (VWI) is specified in the section 9.8 POWER-UP AND POWER-DOWN. All write sequence will
be ignored when Vcc drops to VWI.
Table 7.1 Hardware Write Protection on Status Register
SRWD
WP#
Status Register
0
Low
Writable
1
Low
Protected
0
High
Writable
1
High
Writable
Note: Before the execution of any program, erase or write Status Register instruction, the Write Enable Latch (WEL)
bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not enabled, the program,
erase or write register instruction will be ignored.
7.2 SOFTWARE WRITE PROTECTION
The device also provides a software write protection feature. The Block Protection (BP3, BP2, BP1, BP0) bits allow
part or the whole memory area to be write-protected.
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8. DEVICE OPERATION
The device utilizes an 8-bit instruction register. Refer to Table 8.1. Instruction Set for details on instructions and
instruction codes. All instructions, addresses, and data are shifted in with the most significant bit (MSB) first on
Serial Data Input (SI) or Serial Data IOs (IO0, IO1, IO2, IO3). The input data on SI or IOs is latched on the rising
edge of Serial Clock (SCK) for normal mode and both of rising and falling edges for DTR mode after Chip Enable
(CE#) is driven low (VIL). Every instruction sequence starts with a one-byte instruction code and is followed by
address bytes, data bytes, or both address bytes and data bytes, depending on the type of instruction. CE# must
be driven high (VIH) after the last bit of the instruction sequence has been shifted in to end the operation.
Table 8.1 Instruction Set
Instruction
Name
Operation
Mode
Byte0
Byte1
Byte2
Byte3
Byte4
NORD
Normal Read
Mode
SPI
03h
A
A
A
Data out
FRD
Fast Read
Mode
SPI
QPI
0Bh
A
A
A
Dummy(1)
Byte
Data out
FRDIO
Fast Read
Dual I/O
SPI
BBh
A
Dual
A
Dual
A
Dual
AXh(1),(2)
Dual
Dual
Data out
FRDO
Fast Read
Dual Output
SPI
3Bh
A
A
A
Dummy(1)
Byte
Dual
Data out
FRQIO
Fast Read
Quad I/O
SPI
QPI
EBh
A
Quad
A
Quad
A
Quad
AXh(1), (2)
Quad
Quad
Data out
FRQO
Fast Read
Quad Output
SPI
6Bh
A
A
A
Dummy(1)
Byte
Quad
Data out
FRDTR
Fast Read
DTR Mode
SPI
QPI
0Dh
A
A
A
Dummy(1)
Byte
Dual
Data out
FRDDTR
Fast Read
Dual I/O DTR
SPI
BDh
A
Dual
A
Dual
A
Dual
AXh(1), (2)
Dual
Dual
Data out
FRQDTR
Fast Read
Quad I/O DTR
SPI
QPI
EDh
A
A
A
AXh(1), (2)
Quad
Quad
Data out
PP
Input Page
Program
SPI
QPI
02h
A
A
A
PD
(256byte)
PPQ
Quad Input
Page Program
SPI
32h
38h
A
A
A
Quad PD
(256byte)
SER
Sector Erase
SPI
QPI
D7h
20h
A
A
A
BER32
(32KB)
Block Erase
32Kbyte
SPI
QPI
52h
A
A
A
BER64
(64KB)
Block Erase
64Kbyte
SPI
QPI
D8h
A
A
A
CER
Chip Erase
SPI
QPI
C7h
60h
WREN
Write Enable
SPI
QPI
06h
WRDI
Write Disable
SPI
QPI
04h
RDSR
Read Status
Register
SPI
QPI
05h
SR
WRSR
Write Status
Register
SPI
QPI
01h
WSR
Data
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Byte5
Byte6
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IS25LP032D
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Instruction
Name
Operation
Mode
Byte0
Byte1
RDFR
Read Function
Register
SPI
QPI
48h
Data
out
WRFR
Write Function
Register
SPI
QPI
42h
WFR
Data
QPIEN
Enter
QPI mode
SPI
35h
QPIDI
Exit
QPI mode
QPI
F5h
PERSUS
Suspend during
program/erase
SPI
QPI
75h
B0h
PERRSM
Resume
program/erase
SPI
QPI
7Ah
30h
DP
Deep Power
Down
SPI
QPI
B9h
SPI
QPI
ABh
XXh(3)
SPI
QPI
65h
Data in
SPI
QPI
C0h
63h
Data in
SPI
QPI
85h
Data in
SPI
QPI
83h
Data in
SPI
QPI
61h
Data out
SPI
QPI
81h
Data out
RDID,
RDPD
SRPNV
SRPV
SERPNV
SERPV
RDRP
RDERP
Read ID /
Release
Power Down
Set Read
Parameters
(Non-Volatile)
Set Read
Parameters
(Volatile)
Set Extended
Read
Parameters
(Non-Volatile)
Set Extended
Read
Parameters
(Volatile)
Read Read
Parameters
(Volatile)
Read Extended
Read Parameters
(Volatile)
Byte2
Byte3
Byte4
XXh(3)
XXh(3)
ID7-ID0
ID7-ID0
CLERP
Clear Extended
Read Register
SPI
QPI
82h
RDJDID
Read JEDEC
ID Command
SPI
QPI
9Fh
MF7-MF0
ID15-ID8
RDMDID
Read
Manufacturer
& Device ID
SPI
QPI
90h
XXh(3)
XXh(3)
RDJDIDQ
Read JEDEC
ID
QPI mode
QPI
AFh
MF7-MF0
ID15-ID8
ID7-ID0
RDUID
Read
Unique ID
SPI
QPI
4Bh
A(4)
A(4)
RDSFDP
SFDP Read
SPI
QPI
5Ah
A
A
NOP
No Operation
SPI
QPI
00h
RSTEN
Software
Reset
Enable
SPI
QPI
66h
RST
Software Reset
SPI
QPI
99h
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Byte5
00h
MF7-MF0
ID7-ID0
01h
ID7-ID0
MF7-MF0
A(4)
Dummy
Byte
Data out
A
Dummy
Byte
Data out
Byte6
32
IS25LP032D
IS25WP032D
Instruction
Name
IRER
IRP
IRRD
Operation
Erase
Information
Row
Program
Information
Row
Read
Information
Row
Mode
Byte0
Byte1
Byte2
Byte3
SPI
QPI
64h
A
A
A
SPI
QPI
62h
A
A
A
PD
(256byte)
SPI
QPI
68h
A
A
A
Dummy
Byte
A
A
A
Data in 1
Data in 2
Data in 3
SECUNLOCK
Sector Unlock
SPI
QPI
26h
SECLOCK
Sector Lock
SPI
QPI
24h
RDABR
Read AutoBoot
Register
SPI
QPI
14h
WRABR
Write AutoBoot
Register
SPI
QPI
15h
Byte4
Byte5
Byte6
Data out
Data in 4
Notes:
1. The number of dummy cycles depends on the value setting in the Table 6.11 Read Dummy Cycles.
2. AXh has to be counted as a part of dummy cycles. X means “don’t care”.
3. XX means “don’t care”.
4. A are “don’t care” and A are always “0”.
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8.1 NORMAL READ OPERATION (NORD, 03h)
The NORMAL READ (NORD) instruction is used to read memory contents at a maximum frequency of 50MHz.
The NORD instruction code is transmitted via the SI line, followed by three address bytes (A23 - A0) of the first
memory location to be read. A total of 24 address bits are shifted in, but only AVMSB (Valid Most Significant Bit) - A0
are decoded. The remaining bits (A23 – AVMSB+1) are ignored. The first byte addressed can be at any memory
location. Upon completion, any data on the SI will be ignored. Refer to Table 8.2 for the related Address Key.
The first byte data (D7 - D0) is shifted out on the SO line, MSB first. A single byte of data, or up to the whole memory
array, can be read out in one NORMAL READ instruction. The address is automatically incremented by one after
each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH) after
the data comes out. When the highest address of the device is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read in one continuous READ instruction.
If the NORMAL READ instruction is issued while an Erase, Program or Write operation is in process (WIP=1) the
instruction is ignored and will not have any effects on the current operation.
Table 8.2 Address Key
Valid Address
32Mb
AVMSB–A0
A21-A0 (A23-A22=X)
Note: X=Don’t Care
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Figure 8.1 Normal Read Sequence
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
...
28
29
30
31
0
SCK
Mode 0
3-byte Address
SI
Instruction = 03h
23
22
...
21
3
2
1
45
46
47
High Impedance
SO
CE #
32
33
34
35
36
37
39
38
40
41
42
43
44
...
SCK
SI
Data Out 1
SO
tV
7
6
5
4
3
Data Out 2
2
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0
7
6
5
4
3
2
0
1
35
...
IS25LP032D
IS25WP032D
8.2 FAST READ OPERATION (FRD, 0Bh)
The FAST READ (FRD) instruction is used to read memory data at up to a 133MHz clock.
The FAST READ instruction code is followed by three address bytes (A23 - A0) and dummy cycles (configurable,
default is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first
data byte from the address is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT,
during the falling edge of SCK.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FAST READ instruction. The FAST READ
instruction is terminated by driving CE# high (VIH).
If the FAST READ instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction
is ignored without affecting the current cycle.
Figure 8.2 Fast Read Sequence
CE #
Mode 3 0
1
2
3
4
5
6
8
7
9
10
...
28
29
30
31
SCK
Mode 0
3-byte Address
SI
Instruction = 0Bh
23
22
21
...
3
2
1
0
41
42
43
44
45
46
47
...
High Impedance
SO
CE #
32
33
34
35
36
37
38
39
40
SCK
SI
Dummy Cycles
Data Out
tV
SO
7
6
5
4
3
2
0
1
...
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.
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FAST READ OPERATION IN QPI MODE (FRD, 0Bh)
The FAST READ (FRD) instruction is used also in QPI mode to read memory data at up to a 133MHz clock.
The FAST READ instruction code (2 clocks) is followed by three address bytes (A23-A0 — 6 clocks) and dummy
cycles (configurable, default is 6 cycles), transmitted via the IO3, IO2, IO1 and IO0 lines, with each bit latched-in
during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines,
with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FAST READ instruction. The FAST READ
instruction in QPI mode is terminated by driving CE# high (VIH).
If the FAST READ instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction
is ignored without affecting the current cycle.
The Fast Read sequence in QPI mode is also applied to the commands in the following table 8.3.
Table 8.3 Instructions that Fast Read sequence in QPI Mode is applied to
Instruction Name
FRQIO
RDUID
IRRD
Operation
Fast Read Quad I/O
Read Unique ID
Read Information Row
Hex Code
EBh
4Bh
68h
Figure 8.3 Fast Read Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
4
5
6
7
8
9
...
13
14
15
16
17
...
SCK
Mode 0
tV
IO[3:0]
0Bh
Instruction
23:20 19:16 15:12 11:8
3-byte Address
7:4
3:0
7:4
6 Dummy Cycles
3:0
Data 1
7:4
3:0
...
Data 2
Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy
Cycles.
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8.3 HOLD OPERATION
HOLD# is used in conjunction with CE# to select the device. When the device is selected and a serial sequence is
underway, HOLD# can be used to pause the serial communication with the master device without resetting the
serial sequence. To pause, HOLD# is brought low while the SCK signal is low. To resume serial communication,
HOLD# is brought high while the SCK signal is low (SCK may still toggle during HOLD). Inputs to SI will be ignored
while SO is in the high impedance state, during HOLD.
Note: HOLD# is not supported in DTR mode or with QE=1 or when RESET# is selected for the HOLD# or RESET# pin.
Timing graph can be referenced in AC Parameters Figure 9.4.
8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh)
The FRDIO allows the address bits to be input two bits at a time. This may allow for code to be executed directly
from the SPI in some applications.
The FRDIO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable, default
is 4 clocks), transmitted via the IO1 and IO0 lines, with each pair of bits latched-in during the rising edge of SCK.
The address MSB is input on IO1, the next bit on IO0, and this shift pattern continues to alternate between the two
lines. Depending on the usage of AX read operation mode, a mode byte may be located after address input.
The first data byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum
frequency fCT, during the falling edge of SCK. The MSB is output on IO1, while simultaneously the second bit is
output on IO0. Figure 8.4 illustrates the timing sequence.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRDIO instruction. FRDIO instruction is
terminated by driving CE# high (VIH).
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8
bits, such as M7 to M0. Four cycles after address input are reserved for Mode bits in FRDIO execution. M7 to M4
are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables
the AX read operation and subsequent FRDIO execution skips command code. It saves cycles as described in
Figure 8.5. When the code is different from AXh (where X is don’t care), the device exits the AX read operation.
After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration
retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11
includes number of mode bit cycles. If dummy cycles are configured as 4 cycles, data output will start right after
mode bit is applied.
If the FRDIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not affect the current cycle.
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Figure 8.4 Fast Read Dual I/O Sequence (with command decode cycles)
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
...
18
19
20
21
SCK
Mode 0
4 Dummy Cycles
3-byte Address
IO0
Instruction = BBh
22
20
18
...
2
0
6
4
23
21
19
...
3
1
7
5
High Impedance
IO1
Mode Bits
CE #
22
23
24
25
26
27
29
28
30
31
32
33
34
35
36
37
...
SCK
tV
IO0
2
0
6
4
2
0
6
Data Out 1
IO1
3
1
7
5
3
4
2
0
6
Data Out 2
1
7
5
3
4
2
0
6
4
...
1
7
5
...
Data Out 3
1
7
5
3
Mode Bits
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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Figure 8.5 Fast Read Dual I/O AX Read Sequence (without command decode cycles)
CE #
Mode 3 0
1
2
3
...
11
12
13
14
15
16
17
18
19
20
...
21
SCK
Mode 0
4 Dummy Cycles
3-byte Address
tV
Data Out 2
Data Out 1
IO0
22
20
18
...
2
0
6
4
2
0
6
4
2
0
6
4
...
IO1
23
21
19
...
3
1
7
5
3
1
7
5
3
1
7
5
...
Mode Bits
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the
mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh)
The FRDO instruction is used to read memory data on two output pins each at up to a 133MHz clock.
The FRDO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable, default
is 8 clocks), transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data
byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency
fCT, during the falling edge of SCK. The first bit (MSB) is output on IO1. Simultaneously, the second bit is output
on IO0.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRDO instruction. The FRDO instruction is
terminated by driving CE# high (VIH).
If the FRDO instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is
ignored and will not have any effects on the current cycle.
Figure 8.6 Fast Read Dual Output Sequence
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
...
28
29
30
31
SCK
Mode 0
3-byte Address
IO0
Instruction = 3Bh
23
22
41
42
21
...
3
2
1
0
44
45
46
47
...
High Impedance
IO1
CE #
32
33
34
35
36
37
38
39
40
43
SCK
tV
IO0
6
2
0
6
Data Out 1
8 Dummy Cycles
IO1
4
7
5
3
4
2
0
...
1
...
Data Out 2
1
7
5
3
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.
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8.6 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh)
The FRQO instruction is used to read memory data on four output pins each at up to a 133 MHz clock.
A Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad Output instruction.
The FRQO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable,
default is 8 clocks), transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the
first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted
out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while
simultaneously the second bit is output on IO2, the third bit is output on IO1, etc.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h
address, allowing the entire memory to be read with a single FRQO instruction. FRQO instruction is termin ated
by driving CE# high (VIH).
If a FRQO instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is
ignored and will not have any effects on the current cycle.
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Figure 8.7 Fast Read Quad Output Sequence
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
...
28
29
30
31
SCK
Mode 0
3-byte Address
IO0
Instruction = 6Bh
23
22
41
42
21
...
3
2
1
0
44
45
46
47
...
High Impedance
IO1
High Impedance
IO2
High Impedance
IO3
CE #
32
33
34
35
36
37
38
39
40
43
SCK
tV
IO0
4
8 Dummy Cycles
0
4
0
4
0
4
0
...
Data Out 1 Data Out 2 Data Out 3 Data Out 4
IO1
5
1
5
1
5
1
5
1
...
IO2
6
2
6
2
6
2
6
2
...
IO3
7
3
7
3
7
3
7
3
...
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.
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8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh)
The FRQIO instruction allows the address bits to be input four bits at a time. This may allow for code to be executed
directly from the SPI in some applications.
A Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad I/O instruction.
The FRQIO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable, default
is 6 clocks), transmitted via the IO3, IO2, IO1 and IO0 lines, with each group of four bits latched-in during the rising
edge of SCK. The address of MSB inputs on IO3, the next bit on IO2, the next bit on IO1, the next bit on IO0, and
continue to shift in alternating on the four. Depending on the usage of AX read operation mode, a mode byte may
be located after address input.
The first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted
out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while
simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. Figure 8.8 illustrates the timing
sequence.
The first byte addressed can be at any memory location. The address is automatically incremented after each byte
of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h
address, allowing the entire memory to be read with a single FRQIO instruction. FRQIO instruction is terminated
by driving CE# high (VIH).
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8
bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO execution. M7 to M4
are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables
the AX read operation and subsequent FRQIO execution skips command code. It saves cycles as described in
Figure 8.9. When the code is different from AXh (where X is don’t care), the device exits the AX read operation.
After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration
retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11
includes number of mode bit cycles. If dummy cycles are configured as 6 cycles, data output will start right after
mode bits and 4 additional dummy cycles are applied.
If the FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
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Figure 8.8 Fast Read Quad I/O Sequence (with command decode cycles)
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
11
12
13
14
15
SCK
Mode 0
3-byte Address
IO0
20
16
12
8
4
0
4
0
21
17
13
9
5
1
5
1
IO2
22
18
14
10
6
2
6
2
IO3
23
19
15
11
7
3
7
3
Instruction = EBh
High Impedance
IO1
Mode Bits
CE #
16
17
18
19
20
21
23
22
24
25
26
27
28
29
30
31
...
SCK
6 Dummy Cycles
tV Data Out 1 Data Out 2 Data Out 3 Data Out 4 Data Out 5 Data Out 6
IO0
4
0
4
0
4
0
4
0
4
0
4
0
...
IO1
5
1
5
1
5
1
5
1
5
1
5
1
...
6
2
6
2
6
2
6
2
6
2
6
2
...
7
3
7
3
7
3
7
3
7
3
7
3
...
IO2
IO3
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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Figure 8.9 Fast Read Quad I/O AX Read Sequence (without command decode cycles)
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
...
SCK
Mode 0
6 Dummy Cycles
3-byte Address
tV
Data Out 1 Data Out 2
IO0
20
16
12
8
4
0
4
0
4
0
4
0
...
IO1
21
17
13
9
5
1
5
1
5
1
5
1
...
IO2
22
18
14
10
6
2
6
2
6
2
6
2
...
IO3
23
19
15
11
7
3
7
3
7
3
7
3
...
Mode Bits
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the
mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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FAST READ QUAD I/O OPERATION IN QPI MODE (FRQIO, EBh)
The FRQIO instruction is also used in QPI mode to read memory data at up to a 133MHz clock.
It is not required to set QE bit to “1”.before Fast Read Quad I/O instruction in QPI mode.
The FRQIO instruction in QPI mode utilizes all four IO lines to input the instruction code so that only two clocks are
required, while the FRQIO instruction in SPI mode requires that the byte-long instruction code is shifted into the
device only via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQIO instruction in
QPI mode. In addition, subsequent address and data out are shifted in/out via all four IO lines like the FRQIO
instruction. In fact, except for the command cycle, the FRQIO operation in QPI mode is exactly same as the FRQIO
operation in SPI mode.
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8
bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO execution. M7 to M4
are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables
the AX read operation and subsequent FRQIO execution skips command code. It saves cycles as described in
Figure 8.9. When the code is different from AXh (where X is don’t care), the device exits the AX read operation.
After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration
retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11
includes number of mode bit cycles. If dummy cycles are configured as 6 cycles, data output will start right after
mode bits and 4 additional dummy cycles are applied.
If the FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
Figure 8.10 Fast Read Quad I/O Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
4
5
6
7
8
9
...
13
14
15
16
17
...
SCK
Mode 0
Mode Bits
IO[3:0]
EBh
Instruction
23:20 19:16 15:12 11:8
3-byte Address
7:4
3:0
7:4
3:0
6 Dummy Cycles
tV
7:4
3:0
Data 1
7:4
3:0
...
Data 2
Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy
Cycles.
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8.8 PAGE PROGRAM OPERATION (PP, 02h)
The Page Program (PP) instruction allows up to 256 bytes data to be programmed into memory in a single
operation. The destination of the memory to be programmed must be outside the protected memory area set by
the Block Protection (BP3, BP2, BP1, BP0) bits. A PP instruction which attempts to program into a page that is
write-protected will be ignored. Before the execution of PP instruction, the Write Enable Latch (WEL) must be
enabled through a Write Enable (WREN) instruction.
The PP instruction code, three address bytes and program data (1 to 256 bytes) are input via the Sl line. Program
operation will start immediately after the CE# is brought high, otherwise the PP instruction will not be executed.
The internal control logic automatically handles the programming voltages and timing. The progress or completion
of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If
the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously
latched data are discarded, and the last 256 bytes are kept to be programmed into the page. The starting byte can
be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning
of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same
page will remain unchanged.
Note: A program operation can alter “1”s into “0”s. The same byte location or page may be programmed more than
once, to incrementally change “1”s to “0”s. An erase operation is required to change “0”s to “1”s.
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Figure 8.11 Page Program Sequence In SPI Mode
1
...
7
8
9
...
31
32
33
...
39
...
...
2079
Mode 3 0
2072
CE #
SCK
Mode 0
SI
3-byte Address
Instruction = 02h
23
22
...
Data In 1
Data In 256
0
7
6
...
0
...
7
...
0
6
7
8
9
10
11
12
13
14
15
...
7:4
3:0
7:4
3:0
7:4
3:0
7:4
3:0
7:4
3:0
...
High Impedance
SO
Figure 8.12 Page Program Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
4
5
SCK
Mode 0
IO[3:0]
02h
23:20 19:16 15:12 11:8
3-byte Address
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Data In 1
Data In 2
Data In 3
Data In 4
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8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h)
The Quad Input Page Program instruction allows up to 256 bytes data to be programmed into memory in a single
operation with four pins (IO0, IO1, IO2 and IO3). The destination of the memory to be programmed must be outside
the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits. A Quad Input Page Program
instruction which attempts to program into a page that is write-protected will be ignored.
Before the execution of Quad Input Page Program instruction, the QE bit in the Status Register must be set to “1”
and the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction.
Program operation will start immediately after the CE# is brought high, otherwise the Quad Input Page Program
instruction will not be executed. The internal control logic automatically handles the programming voltages and
timing. The progress or completion of the program operation can be determined by reading the WIP bit in Status
Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the
program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously
latched data are discarded, and the last 256 bytes data are kept to be programmed into the page. The starting byte
can be anywhere within the page. When the end of the page is reached, the address will wrap around to the
beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on
the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s. The same byte location or page may be programmed more than
once, to incrementally change “1”s to “0”s. An erase operation is required to change “0”s to “1”s.
Figure 8.13 Quad Input Page Program Sequence
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
...
31
32
33
34
35
...
SCK
Mode 0
3-byte Address
Data In 1
Data In 2
4
0
4
0
...
5
1
5
1
...
IO2
6
2
6
2
...
IO3
7
3
7
3
...
IO0
IO1
Instruction = 32h/38h
High Impedance
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22
...
0
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8.10 ERASE OPERATION
The Erase command sets all bits in the addressed sector or block to “1”s.
The memory array of the device is organized into uniform 4 Kbyte sectors or 32/64 Kbyte uniform blocks (a block
consists of eight/sixteen adjacent sectors respectively).
Before a byte is reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to “1”).
In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase (BER)
and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without affecting the
data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the whole
memory array of a device. A sector erase, block erase, or chip erase operation can be executed prior to any
programming operation.
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8.11 SECTOR ERASE OPERATION (SER, D7h/20h)
A Sector Erase (SER) instruction erases a 4 Kbyte sector before the execution of a SER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically reset after
the completion of Sector Erase operation.
A SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire instruction
sequence The SER instruction code, and three address bytes are input via SI. Erase operation will start immediately
after CE# is pulled high. The internal control logic automatically handles the erase voltage and timing.
The progress or completion of the erase operation can be determined by reading the WIP bit in the Status Register
using a RDSR instruction.
If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been
completed.
Figure 8.14 Sector Erase Sequence in SPI mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
1
0
SCK
Mode 0
3-byte Address
SI
SO
Instruction = D7h/20h
23
22
21
...
4
5
6
7
7:4
3:0
3
2
High Impedance
Figure 8.15 Sector Erase Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
SCK
Mode 0
IO[3:0]
3-byte Address
D7h/20h
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8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h)
A Block Erase (BER) instruction erases a 32/64Kbyte block. Before the execution of a BER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after the
completion of a block erase operation.
The BER instruction code and three address bytes are input via SI. Erase operation will start immediately after the
CE# is pulled high, otherwise the BER instruction will not be executed. The internal control logic automatically
handles the erase voltage and timing.
Figure 8.16 Block Erase (64K) Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
2
1
0
SCK
Mode 0
3-byte Address
SI
SO
Instruction = D8h
23
22
21
...
4
5
6
7
7:4
3:0
3
High Impedance
Figure 8.17 Block Erase (64K) Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
SCK
Mode 0
IO[3:0]
3-byte Address
D8h
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Figure 8.18 Block Erase (32K) Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
2
1
0
SCK
Mode 0
3-byte Address
SI
SO
Instruction = 52h
23
22
21
...
4
5
6
7
7:4
3:0
3
High Impedance
Figure 8.19 Block Erase (32K) Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
SCK
Mode 0
IO[3:0]
3-byte Address
52h
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8.13 CHIP ERASE OPERATION (CER, C7h/60h)
A Chip Erase (CER) instruction erases the entire memory array. Before the execution of CER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is automatically reset after
completion of a chip erase operation.
The CER instruction code is input via the SI. Erase operation will start immediately after CE# is pulled high,
otherwise the CER instruction will not be executed. The internal control logic automatically handles the erase
voltage and timing.
Chip Erase (CER) instruction can be executed only when Block Protection (BP3~BP0) bits are set to 0s. If the BP
bits are not 0, the CER command is not executed and E_ERR and PROT_E are set.
Figure 8.20 Chip Erase Sequence In SPI Mode
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
SI
Instruction = C7h/60h
SO
High Impedance
Figure 8.21 Chip Erase Sequence In QPI Mode
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
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8.14 WRITE ENABLE OPERATION (WREN, 06h)
The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit is reset to the
write-protected state after power-up. The WEL bit must be write enabled before any write operation, including
Sector Erase, Block Erase, Chip Erase, Page Program, Program Information Row, Write Status Register, Write
Function Register, Set non-volatile Read Register, Set non-volatile Extended Read Register, and Write Autoboot
Register operations except for Set volatile Read Register and Set volatile Extended Read Register. The WEL bit
will be reset to the write-protected state automatically upon completion of a write operation. The WREN instruction
is required before any above operation is executed.
Figure 8.22 Write Enable Sequence In SPI Mode
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
Instruction = 06h
SI
High Impedance
SO
Figure 8.23 Write Enable Sequence In QPI Mode
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
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8.15 WRITE DISABLE OPERATION (WRDI, 04h)
The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI instruction
is not required after the execution of a write instruction, since the WEL bit is automatically reset.
Figure 8.24 Write Disable Sequence In SPI Mode
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
Instruction = 04h
SI
High Impedance
SO
Figure 8.25 Write Disable Sequence In QPI Mode
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
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8.16 READ STATUS REGISTER OPERATION (RDSR, 05h)
The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a
program, erase or write Status Register operation, RDSR instruction can be used to check the progress or
completion of an operation by reading the WIP bit of Status Register.
Figure 8.26 Read Status Register Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Mode 0
SI
Instruction = 05h
tV
SO
Data Out
7
6
5
4
3
2
1
Figure 8.27 Read Status Register Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
SCK
Mode 0
tV
IO[3:0]
05h
7:4
3:0
Data Out
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IS25WP032D
8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h)
The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and Status
Register write protection features by writing “0”s or “1”s into the non-volatile BP3, BP2, BP1, BP0, and SRWD bits.
Also WRSR instruction allows the user to disable or enable quad operation by writing “0” or “1” into the non-volatile
QE bit.
Figure 8.28 Write Status Register Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
11
12
13
14
15
2
1
0
SCK
Mode 0
Data In
SI
SO
Instruction = 01h
7
6
2
3
7:4
3:0
5
4
3
High Impedence
Figure 8.29 Write Status Register Sequence In QPI Mode
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
01h
Data In
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8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h)
The Read Function Register (RDFR) instruction provides access to the Function Register. Refer to Table 6.6
Function Register Bit Definition for more detail.
Figure 8.30 Read Function Register Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Mode 0
SI
Instruction = 48h
tV
SO
Data Out
7
6
5
4
3
2
1
Figure 8.31 Read Function Register Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
SCK
Mode 0
tV
IO[3:0]
48h
7:4
3:0
Data Out
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8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)
The Write Function Register (WRFR) instruction allows the user to disable dedicated RESET# pin or ball on 16-pin
SOIC or 24 ball TFBGA by setting Dedicated RESET# Disable bit to “1”. Also Information Row Lock bits
(IRL3~IRL0) can be set to “1” individually by WRFR instruction in order to lock Information Row.
Since Dedicated RESET# Disable bit and IRL bits are OTP, once they are set to “1”, they cannot be set back to “0”
again
Figure 8.32 Write Function Register Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
11
12
13
14
15
2
1
0
SCK
Mode 0
Data In
SI
SO
Instruction = 42h
7
6
5
4
3
High Impedence
Figure 8.33 Write Function Register Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
7:4
3:0
SCK
Mode 0
IO[3:0]
42h
Data In
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8.20 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QPIEN, 35h; QPIDI, F5h)
The Enter Quad Peripheral Interface (QPIEN) instruction, 35h, enables the Flash device for QPI bus operation.
Upon completion of the instruction, all instructions thereafter will be 4-bit multiplexed input/output until a power
cycle or an Exit Quad Peripheral Interface instruction is sent to device.
The Exit Quad Peripheral Interface (QPIDI) instruction, F5h, resets the device to 1-bit SPI protocol operation. To
execute an Exit Quad Peripheral Interface operation, the host drives CE# low, sends the QPIDI instruction, then
drives CE# high. The device just accepts QPI (2 clocks) command cycles.
Figure 8.34 Enter Quad Peripheral Interface (QPI) Mode Sequence
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
Instruction = 35h
SI
High Impedance
SO
Figure 8.35 Exit Quad Peripheral Interface (QPI) Mode Sequence
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
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8.21 PROGRAM/ERASE SUSPEND & RESUME
The device allows the interruption of Sector Erase, Block Erase, or Page Program operations to conduct other
operations. 75h/B0h command for suspend and 7Ah/30h for resume will be used. (SPI/QPI all acceptable) Function
Register bit2 (PSUS) and bit3 (ESUS) are used to check whether or not the device is in suspend mode.
Suspend to read ready timing (tSUS): 100µs (MAX)
Resume to another suspend timing (tRS): 80µs (TYP)
SUSPEND DURING SECTOR-ERASE OR BLOCK-ERASE (PERSUS 75h/B0h)
The Suspend command allows the interruption of Sector Erase and Block Erase operations. But Suspend command
will be ignored during Chip Erase operation. After the Suspend command, other commands include array read
operation can be accepted.
But Write Status Register command (01h) and Erase instructions are not allowed during Erase Suspend. Also,
array read for being erased sector/block is not allowed.
To execute Erase Suspend operation, the host drives CE# low, sends the Suspend command cycle (75h/B0h),
then drives CE# high. The Function Register indicates that the Erase has been suspended by setting the ESUS bit
from “0” to “1”, but the device will not accept another command until it is ready. To determine when the device will
accept a new command, poll the WIP bit or wait the specified time tSUS. When ESUS bit is set to “1”, the Write
Enable Latch (WEL) bit clears to “0”.
SUSPEND DURING PAGE PROGRAMMING (PERSUS 75h/B0h)
The Suspend command also allows the interruption of all array Program operations. After the Suspend command,
other commands include array read operation can be accepted can be accepted.
But Write Status Register instruction (01h) and Program instructions are not allowed during Program Suspend.
Also, array read for being programmed page is not allowed.
To execute the Program Suspend operation, the host drives CE# low, sends the Suspend command cycle
(75h/B0h), then drives CE# high. The Function Register indicates that the programming has been suspended by
setting the PSUS bit from “0” to “1”, but the device will not accept another command until it is ready. To determine
when the device will accept a new command, poll the WIP bit or wait the specified time tSUS. When PSUS bit is set
to “1”, the Write Enable Latch (WEL) bit clears to “0”.
PROGRAM/ERASE RESUME (PERRSM 7Ah/30h)
The Program/Erase Resume restarts the Program or Erase command that was suspended, and clears the suspend
status bit in the Function Register (ESUS or PSUS bits) to “0”. To execute the Program/Erase Resume operation,
the host drives CE# low, sends the Program/Erase Resume command cycle (7Ah/30h), then drives CE# high. A
cycle is two nibbles long, most significant nibble first. To issue another Erase Suspend operation after Erase
Resume operation, Erase Resume to another Erase Suspend delay (tRS) is required, but it could require longer
Erase time to complete Erase operation.
To determine if the internal, self-timed Write operation completed, poll the WIP bit.
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Table 8.4 Instructions accepted during Suspend
Instruction Allowed
Operation
Suspended
Name
Hex Code
Program or Erase
NORD
03h
Read Data Bytes from Memory at Normal Read Mode
Program or Erase
FRD
0Bh
Read Data Bytes from Memory at Fast Read Mode
Program or Erase
FRDIO
BBh
Fast Read Dual I/O
Program or Erase
FRDO
3Bh
Fast Read Dual Output
Program or Erase
FRQIO
EBh
Fast Read Quad I/O
Program or Erase
FRQO
6Bh
Fast Read Quad Output
Program or Erase
FRDTR
0Dh
Fast Read DTR Mode
Program or Erase
FRDDTR
BDh
Fast Read Dual I/O DTR
Program or Erase
FRQDTR
EDh
Fast Read Quad I/O DTR
Erase
PP
02h
Serial Input Page Program
Erase
PPQ
32h/38h
Quad Input Page Program
Erase
WREN
06h
Write Enable
Program or Erase
RDSR
05h
Read Status Register
Program or Erase
RDFR
48h
Read Function Register
Program or Erase
CLERP
82h
Clear Extended Read Register
Program or Erase
PERRSM
7Ah/30h
Resume program/erase
Erase
PERSUS
75h/B0h
Program/Erase Suspend
Program or Erase
RDID
ABh
Program or Erase
SRPV
C0/63h
Program or Erase
SERPV
83h
Set Extended Read Parameters (Volatile)
Program or Erase
RDRP
61h
Read Read Parameters (Volatile)
Program or Erase
RDERP
81h
Read Extended Read Parameters (Volatile)
Program or Erase
RDJDID
9Fh
Read Manufacturer and Product ID by JEDEC ID Command
Program or Erase
RDMDID
90h
Read Manufacturer and Device ID
Program or Erase
RDJDIDQ
AFh
Read JEDEC ID QPI mode
Program or Erase
RDUID
4Bh
Read Unique ID Number
Program or Erase
RDSFDP
5Ah
SFDP Read
Program or Erase
NOP
00h
No Operation
Program or Erase
RSTEN
66h
Software reset enable
Program or Erase
RST
99h
Reset (Only along with 66h)
Program or Erase
IRRD
68h
Read Information Row
Erase
SECUNLOCK
26h
Sector Unlock
Erase
SECLOCK
24h
Sector Lock
Program or Erase
RDABR
14h
Read AutoBoot Register
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Read Manufacturer and Product ID
Set Read Parameters (Volatile)
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8.22 ENTER DEEP POWER DOWN (DP, B9h)
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (enter
into Power-down mode). During this mode, standby current is reduced from Isb1 to Isb2. While in the Power-down
mode, the device is not active and all Write/Program/Erase instructions are ignored. The instruction is initiated by
driving the CE# pin low and shifting the instruction code into the device. The CE# pin must be driven high after the
instruction has been latched, or Power-down mode will not engage. Once CE# pin driven high, the Power-down
mode will be entered within the time duration of tDP. While in the Power-down mode only the Release from Powerdown/RDID instruction, which restores the device to normal operation, will be recognized. All other instructions are
ignored, including the Read Status Register instruction which is always available during normal operation. Ignoring
all but one instruction makes the Power Down state a useful condition for securing maximum write protection. It is
available in both SPI and QPI mode.
Figure 8.36 Enter Deep Power Down Mode Sequence In SPI Mode
tDP
CE #
Mode 3 0
1
2
3
4
5
6
7
SCK
Mode 0
SI
SO
Instruction = B9h
High Impedance
Figure 8.37 Enter Deep Power Down Mode Sequence In QPI Mode
tDP
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
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8.23 RELEASE DEEP POWER DOWN (RDPD, ABh)
The Release Deep Power-down/Read Device ID instruction is a multi-purpose command. To release the device
from the Power-down mode, the instruction is issued by driving the CE# pin low, shifting the instruction code “ABh”
and driving CE# high.
Releasing the device from Power-down mode will take the time duration of tRES1 before normal operation is restored
and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration. If the Release
Deep Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in progress (WIP=1) the
instruction is ignored and will not have any effects on the current cycle.
Figure 8.38 Release Deep Power Down Mode Sequence In SPI Mode
tRES1
CE #
Mode 3 0
1
2
3
4
5
6
7
SCK
Mode 0
SI
SO
Instruction = ABh
High Impedance
Figure 8.39 Release Deep Power Down Mode Sequence In QPI Mode
tRES1
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
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8.24 SET READ PARAMETERS OPERATION (SRPNV: 65h, SRPV: C0h/63h)
Set Read Parameter Bits
This device supports configurable burst length and dummy cycles in both SPI and QPI mode by setting three bits
(P2, P1, P0) and four bits (P6, P5, P4, P3) within the Read Register, respectively. To set those bits the SRPNV
and SRPV operation instruction are used. Details regarding burst length and dummy cycles can be found in Table
6.9, Table 6.10, and Table 6.11. HOLD#/RESET# pin selection (P7) bit in the Read Register can be set with the
SRPNV and SRPV operation as well, in order to select HOLD#/RESET# pin as RESET# or HOLD#.
For the device with dedicated RESET# pin (or ball), RESET# pin (or ball) will be a separate pin (or ball) and it is
independent of the P7 bit setting in Read Register
SRPNV is used to set the non-volatile Read register, while SRPV is used to set the volatile Read register.
Note: When SRPNV is executed, the volatile Read Register is set as well as the non-volatile Read Register.
Figure 8.40 Set Read Parameters Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2
1
0
SCK
Mode 0
Data In
SI
SO
Instruction = 65h or C0h/63h
7
6
2
3
7:4
3:0
5
4
3
High Impedence
Figure 8.41 Set Read Parameters Sequence In QPI Mode
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
65h or
C0h/63h
Data In
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Read with “8/16/32/64-Byte Wrap Around”
The device is capable of burst read with wrap around in both SPI and QPI mode. The size of burst length is
configurable by using P0, P1, and P2 bits in Read Register. P2 bit (Wrap enable) enables the burst mode feature.
P0 and P1 define the size of burst. Burst lengths of 8, 16, 32, and 64 bytes are supported. By default, address
increases by one up through the entire array. By setting the burst length, the data being accessed can be limited
to the length of burst boundary within a 256 byte page. The first output will be the data at the initial address which
is specified in the instruction. Following data will come out from the next address within the burst boundary. Once
the address reaches the end of boundary, it will automatically move to the first address of the boundary. CE# high
will terminate the command.
For example, if burst length of 8 and initial address being applied is 0h, following byte output will be from address
00h and continue to 01h,..,07h, 00h, 01h… until CE# terminates the operation. If burst length of 8 and initial address
being applied is FEh(254d), following byte output will be from address FEh and continue to FFh, F8h, F9h, FAh,
FBh, FCh, FDh, and repeat from FEh until CE# terminates the operation.
The commands, “SRPV (65h) or SRPNV (C0h or 63h)”, are used to configure the burst length. If the following data
input is one of “00h”,”01h”,”02h”, and ”03h”, the device will be in default operation mode. It will be continuous burst
read of the whole array. If the following data input is one of “04h”,”05h”,”06h”, and ”07h”, the device will set the
burst length as 8,16,32 and 64, respectively.
To exit the burst mode, another “C0h or 63h” command is necessary to set P2 to 0. Otherwise, the burst mode will
be retained until either power down or reset operation. To change burst length, another “C0h or 63h” command
should be executed to set P0 and P1 (Detailed information in Table 6.9 Burst Length Data). All read commands
will operate in burst mode once the Read Register is set to enable burst mode.
Refer to Figure 8.40 and Figure 8.41 for instruction sequence.
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8.25 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h)
Set Read Operational Driver Strength
This device supports configurable Operational Driver Strength in both SPI and QPI modes by setting three bits
(ODS0, ODS1, ODS2) within the Extended Read Register. To set the ODS bits the SERPNV and SERPV operation
instructions are required. The device’s driver strength can be reduced as low as 12.50% of full drive strength.
Details regarding the driver strength can be found in Table 6.14.
SERPNV is used to set the non-volatile Extended Read register, while SERPV is used to set the volatile Extended
Read register.
Notes:
1. The default driver strength is set to 50%.
2. When SERPNV is executed, the volatile Read Extended Register is set as well as the non-volatile Read Extended
Register.
Figure 8.42 Set Extended Read Parameters Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2
1
0
SCK
Mode 0
Data In
SI
SO
Instruction = 85h/83h
7
6
5
4
3
High Impedence
Figure 8.43 Set Extended Read Parameters Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
7:4
3:0
SCK
Mode 0
IO[3:0]
85h/83h
Data In
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8.26 READ READ PARAMETERS OPERATION (RDRP, 61h)
Prior to, or after setting Read Register, the data of the Read Register can be confirmed by the RDRP command.
The instruction is only applicable for the volatile Read Register, not for the non-volatile Read Register.
Figure 8.44 Read Read Parameters Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Mode 0
SI
Instruction = 61h
tV
SO
Data Out
7
6
5
4
3
2
1
Figure 8.45 Read Read Parameters Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
SCK
Mode 0
tV
IO[3:0]
61h
7:4
3:0
Data Out
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8.27 READ EXTENDED READ PARAMETERS OPERATION (RDERP, 81h)
Prior to, or after setting Extended Read Register, the data of the Extended Read Register can be confirmed by the
RDERP command. The instruction is only applicable for the volatile Extended Read Register, not for the nonvolatile Extended Read Register.
During the execution of a Program, Erase or Write Non-Volatile Register operation, the RDERP instruction will be
executed, which can be used to check the progress or completion of an operation by reading the WIP bit.
Figure 8.46 Read Extended Read Parameters Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Mode 0
SI
Instruction = 81h
tV
SO
Data Out
7
6
5
4
3
2
1
Figure 8.47 Read Extended Read Parameters Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
SCK
Mode 0
tV
IO[3:0]
81h
7:4
3:0
Data Out
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8.28 CLEAR EXTENDED READ PARAMETERS OPERATION (CLERP, 82h)
A Clear Extended Read Register (CLERP) instruction clears PROT_E, P_ERR, and E_ERR error bits in the
Extended Read Register to “0” when the error bits are set to “1”. Once the error bits are set to “1”, they remains set
to “1” until they are cleared to “0” with a CLERP command.
Figure 8.48 Clear Extended Read Parameters Sequence In SPI Mode
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
Instruction = 82h
SI
High Impedance
SO
Figure 8.49 Clear Extended Read Parameters Sequence In QPI Mode
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
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8.29 READ PRODUCT IDENTIFICATION (RDID, ABh)
The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. It can support both SPI
and QPI modes. The Read Product Identification (RDID) instruction is for reading out the old style of 8-bit Electronic
Signature, whose values are shown as table of Product Identification.
The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SI during the rising SCK
edge. Then the Device ID is shifted out on SO with the MSB first, each bit been shifted out during the falling edge
of SCK. The RDID instruction is ended by driving CE# high. The Device ID (ID7-ID0) outputs repeatedly if additional
clock cycles are continuously sent to SCK while CE# is at low.
Table 8.5 Product Identification
Manufacturer ID
(MF7-MF0)
ISSI Serial Flash
9Dh
Instruction
ABh
90h
Part Number
Device ID (ID7-ID0)
9Fh
Memory Type + Capacity
(ID15-ID0)
IS25LP032D
15h
6016h
IS25WP032D
15h
7016h
Figure 8.50 Read Product Identification Sequence In SPI Mode
CE #
Mode 3 0
1
...
7
8
9
...
31
32
33
...
39
SCK
Mode 0
SI
Instruction = ABh
3 Dummy Bytes
tV
SO
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Data Out
Device ID
(ID7-ID0)
73
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Figure 8.51 Read Product Identification Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
4
5
6
7
8
9
SCK
Mode 0
tV
IO[3:0]
ABh
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Device ID
(ID7-ID0)
74
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8.30 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh)
The JEDEC ID READ instruction allows the user to read the manufacturer and product ID of devices. Refer to Table
8.5 Product Identification for Manufacturer ID and Device ID. After the JEDEC ID READ command (9Fh in SPI
mode and QPI mode, AFh in QPI mode) is input, the Manufacturer ID is shifted out MSB first followed by the 2byte electronic ID (ID15-ID0) that indicates Memory Type and Capacity, one bit at a time. Each bit is shifted out
during the falling edge of SCK. If CE# stays low after the last bit of the 2-byte electronic ID, the Manufacturer ID
and 2-byte electronic ID will loop until CE# is pulled high.
Figure 8.52 RDJDID (Read JEDEC ID) Sequence In SPI Mode
CE #
Mode 3 0
1
...
7
8
9
15
...
16
17
...
23
24
25
...
SCK
Mode 0
SI
Instruction = 9Fh
tV
Manufacturer ID
(MF7-MF0)
SO
Capacity
(ID7-ID0)
Memory Type
(ID15-ID8)
Figure 8.53 RDJDID and RDJDIDQ (Read JEDEC ID) Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
4
5
6
7
SCK
Mode 0
IO[3:0]
tV
9Fh/AFh
7:4
3:0
MF7-MF0
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7:4
3:0
ID7-ID0
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8.31 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h)
The Read Device Manufacturer and Device ID (RDMDID) instruction allows the user to read the Manufacturer and
product ID of devices. Refer to Table 8.5 Product Identification for Manufacturer ID and Device ID. The RDMDID
instruction code is followed by two dummy bytes and one byte address (A7~A0), each bit being latched-in on SI
during the rising edge of SCK. If one byte address is initially set as A0 = 0, then the Manufacturer ID is shifted out
on SO with the MSB first followed by the Device ID (ID7- ID0). Each bit is shifted out during the falling edge of SCK.
If one byte address is initially set as A0 = 1, then Device ID will be read first followed by the Manufacturer ID. The
Manufacturer and Device ID can be read continuously alternating between the two until CE# is driven high.
Figure 8.54 Read Product Identification by RDMDID Sequence In SPI Mode
CE #
Mode 3 0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
SCK
Mode 0
SI
Instruction = 90h
3-byte Address
tV
Device ID
(ID7-ID0)
Manufacturer ID
(MF7-MF0)
SO
Notes:
1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) → 1-byte Device ID (ID7-ID0)
ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) → 1-byte Manufacturer ID (MF7-MF0)
2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is
pulled high.
Figure 8.55 Read Product Identification by RDMDID Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
SCK
Mode 0
tV
IO[3:0]
90h
23:20 19:16 15:12 11:8
Instruction
3-byte Address
7:4
3:0
7:4
3:0
7:4
3:0
Manufacturer Device ID
ID (MF7-MF0) (ID7-ID0)
Notes:
1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) → 1-byte Device ID (ID7-ID0)
ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) → 1-byte Manufacturer ID (MF7-MF0)
2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is
pulled high.
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8.31 READ UNIQUE ID NUMBER (RDUID, 4Bh)
The Read Unique ID Number (RDUID) instruction accesses a factory-set read-only 16-byte number that is unique
to the device. The ID number can be used in conjunction with user software methods to help prevent copying or
cloning of a system. The RDUID instruction is instated by driving the CE# pin low and shifting the instruction code
(4Bh) followed by 3 address bytes and dummy cycles (configurable, default is 8 clocks). After which, the 16-byte
ID is shifted out on the falling edge of SCK as shown below.
As a result, the sequence of RDUID instruction is same as FAST READ. RDUID sequence in QPI mode is also
same as FAST READ sequence in QPI mode except for the instruction code. Refer to the FAST READ in QPI
mode operation.
Note: 16 bytes of data will repeat as long as CE# is low and SCK is toggling.
Figure 8.56 RDUID Sequence In SPI Mode
CE #
Mode 3 0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
...
SCK
Mode 0
SI
Instruction = 4Bh
3 Byte Address
Dummy Cycles
tV
SO
Data Out
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.
A[23:16]
A[15:9]
A[8:4]
A[3:0]
XXh
XXh
00h
0h Byte address
XXh
XXh
00h
1h Byte address
XXh
XXh
00h
2h Byte address
XXh
XXh
00h
…
Table 8.6 Unique ID Addressing
XXh
XXh
00h
Fh Byte address
Note: XX means “don’t care”.
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8.32 READ SFDP OPERATION (RDSFDP, 5Ah)
The Serial Flash Discoverable Parameters (SFDP) standard provides a consistent method of describing the
functions and features of serial Flash devices in a standard set of internal parameter tables. These parameters can
be interrogated by host system software to enable adjustments needed to accommodate divergent features from
multiple vendors. For more details please refer to the JEDEC Standard JESD216 (Serial Flash Discoverable
Parameters).
The sequence of issuing RDSFDP instruction in SPI mode is:
CE# goes low → Send RDSFDP instruction (5Ah) → Send 3 address bytes on SI pin → 8 dummy cycles on SI pin
→ Read SFDP code on SO → End RDSFDP operation by driving CE# high at any time during data out. Refer to
ISSI’s Application note for SFDP table. The data at the addresses that are not specified in SFDP table are
undefined.
RDSFDP Sequence in QPI mode, has 8 dummy cycles before SFDP code, too.
Figure 8.57 RDSFDP (Read SFDP) Sequence in SPI mode
CE #
Mode 3 0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
...
SCK
Mode 0
SI
Instruction = 5Ah
3 Byte Address
Dummy Cycles
tV
SO
Data Out
8.33 NO OPERATION (NOP, 00h)
The No Operation command solely cancels a Reset Enable command and has no impact on any other commands.
It is available in both SPI and QPI modes. To execute a NOP, the host drives CE# low, sends the NOP command
cycle (00H), then drives CE# high.
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8.34 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE RESET
The Software Reset operation is used as a system reset that puts the device in normal operating mode. During the
Reset operation, the value of volatile registers will default back to the value in the corresponding non-volatile
register. This operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST). The operation
requires the Reset-Enable command followed by the Reset command. Any command other than the Reset
command after the Reset-Enable command will disable the Reset-Enable.
Execute the CE# pin low → sends the Reset-Enable command (66h), and drives CE# high. Next, the host drives
CE# low again, sends the Reset command (99h), and pulls CE# high.
Only if the RESET# pin is enabled, Hardware Reset function is available.
For the device with HOLD#/RESET#, the RESET# pin will be solely applicable in SPI mode and when the QE bit =
“0”. For the device with dedicated RESET# (Dedicated RESET# Disable bit is “0” in Function Register), the RESET#
pin is always applicable regardless of the QE bit value in Status Register and HOLD#/RESET# selection bit (P7) in
Read Register in SPI/QPI mode.
In order to activate Hardware Reset, the RESET# pin (or ball) must be driven low for a minimum period of tRESET
(100ns). Drive RESET# low for a minimum period of tRESET will interrupt any on-going internal and external
operations, release the device from deep power down mode1, disable all input signals, force the output pin enter a
state of high impedance, and reset all the read parameters.
The required wait time after activating a HW Reset before the device will accept another instruction is tHWRST of
35us.
The Software/Hardware Reset during an active Program or Erase operation aborts the operation, which can result
in corrupting or losing the data of the targeted address range. Depending on the prior operation, the reset timing
may vary. Recovery from a Write operation will require more latency than recovery from other operations.
Note1: The Status and Function Registers remain unaffected.
Figure 8.58 Software Reset Enable and Software Reset Sequence In SPI Mode (RSTEN, 66h + RST, 99h)
CE#
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
SCK
Mode 0
SI
Instruction = 66h
Instruction = 99h
High Impedance
SO
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Figure 8.59 Software Reset Enable and Software Reset Sequence In QPI Mode (RSTEN, 66h + RST, 99h)
CE#
Mode 3 0
1
0
1
SCK
Mode 0
IO[3:0]
99h
66h
8.35 SECURITY INFORMATION ROW
The security Information Row is comprised of an additional 4 x 256 bytes of programmable information. The security
bits can be reprogrammed by the user. Any program security instruction issued while an erase, program or write
cycle is in progress is rejected without having any effect on the cycle that is in progress.
Table 8.7 Information Row Valid Address Range
Address Assignment
IRL0 (Information Row Lock0)
IRL1
IRL2
IRL3
A[23:16]
00h
00h
00h
00h
A[15:8]
00h
10h
20h
30h
A[7:0]
Byte address
Byte address
Byte address
Byte address
Bit 7~4 of the Function Register is used to permanently lock the programmable memory array.
When Function Register bit IRLx = “0”, the 256 bytes of the programmable memory array can be programmed.
When Function Register bit IRLx = “1”, the 256 bytes of the programmable memory array function as read only.
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8.36 INFORMATION ROW ERASE OPERATION (IRER, 64h)
Information Row Erase (IRER) instruction erases the data in the Information Row x (x: 0~3) array. Prior to the
operation, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is
automatically reset after the completion of the operation.
The sequence of IRER operation: Pull CE# low to select the device → Send IRER instruction code → Send three
address bytes → Pull CE# high. CE# should remain low during the entire instruction sequence. Once CE# is pulled
high, Erase operation will begin immediately. The internal control logic automatically handles the erase voltage and
timing.
Figure 8.60 IRER (Information Row Erase) Sequence
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
1
0
SCK
Mode 0
3-byte Address
SI
SO
Instruction = 64h
23
22
21
...
3
2
High Impedance
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8.37 INFORMATION ROW PROGRAM OPERATION (IRP, 62h)
The Information Row Program (IRP) instruction allows up to 256 bytes data to be programmed into the memory in
a single operation. Before the execution of IRP instruction, the Write Enable Latch (WEL) must be enabled through
a Write Enable (WREN) instruction.
The IRP instruction code, three address bytes and program data (1 to 256 bytes) should be sequentially input.
Three address bytes has to be input as specified in the Table 8.7 Information Row Valid Address Range. Program
operation will start once the CE# goes high, otherwise the IRP instruction will not be executed. The internal control
logic automatically handles the programming voltages and timing. The progress or completion of the program
operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”,
the program operation is still in progress. If WIP bit is “0”, the program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page. The
previously latched data are discarded and the last 256 bytes data are kept to be programmed into the page. The
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around
to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other
bytes on the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s, The same byte location or Information Row array may be
programmed more than once to incrementally change “1” to “0”s. An erase operation is required to change “0”s
back to “1”s.
Figure 8.61 IRP (Information Row Program) Sequence
1
...
7
8
9
...
31
32
33
...
39
...
...
2079
Mode 3 0
2072
CE #
SCK
Mode 0
SI
SO
3-byte Address
Instruction = 62h
23
22
...
Data In 1
0
7
6
...
Data In 256
0
...
7
...
High Impedance
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8.38 INFORMATION ROW READ OPERATION (IRRD, 68h)
The IRRD instruction is used to read memory data at up to a 133MHz clock.
The IRRD instruction code is followed by three address bytes (A23 - A0) and dummy cycles (configurable, default
is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data
byte addressed is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling
edge of SCK.
The address is automatically incremented by one after each byte of data is shifted out. Once the address reaches
the last address of each 256 byte Information Row, the next address will not be valid and the data of the address
will be garbage data. It is recommended to repeat four times IRRD operation that reads 256 byte with a valid starting
address of each Information Row in order to read all data in the 4 x 256 byte Information Row array. The IRRD
instruction is terminated by driving CE# high (VIH).
If an IRRD instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
The sequence of IRRD instruction is same as FAST READ except for the instruction code. IRRD QPI sequence is
also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI operation.
Figure 8.62 IRRD (Information Row Read) Sequence
CE #
Mode 3
0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
...
SCK
Mode 0
SI
Instruction = 68h
3 Byte Address
Dummy Cycles
tV
SO
Data Out
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.
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8.39 FAST READ DTR MODE OPERATION IN SPI MODE (FRDTR, 0Dh)
The FRDTR instruction is for doubling the data in and out. Signals are triggered on both rising and falling edge of
clock. The address is latched on both rising and falling edge of SCK, and data of each bit shifts out on both rising
and falling edge of SCK at a maximum frequency. The 2-bit address can be latched-in at one clock, and 2-bit data
can be read out at one clock, which means one bit at the rising edge of clock, the other bit at the falling edge of
clock.
The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte of data is shifted out, so the whole memory can be read out in a single FRDTR instruction. The
address counter rolls over to 0 when the highest address is reached.
The sequence of issuing FRDTR instruction is: CE# goes low → Sending FRDTR instruction code (1bit per clock)
→ 3-byte address on SI (2-bit per clock) → 8 dummy clocks (configurable, default is 8 clocks) on SI → Data out on
SO (2-bit per clock) → End FRDTR operation via driving CE# high at any time during data out.
While a Program/Erase/Write Status Register cycle is in progress, FRDTR instruction will be rejected without any
effect on the current cycle.
Figure 8.63 FRDTR Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
...
19
20
21
SCK
Mode 0
3-byte Address
SI
Instruction = 0Dh
23 22 21 20 19 18 17
...
0
High Impedance
SO
CE #
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
...
SCK
SI
8 Dummy Cycles
tV
Data Out 1
SO
Data Out 2
Data Out ...
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 ...
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.
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FAST READ DTR MODE OPERATION IN QPI MODE (FRDTR, 0Dh)
The FRDTR instruction in QPI mode utilizes all four IO lines to input the instruction code so that only two clocks
are required, while the FRDTR instruction requires that the byte-long instruction code is shifted into the device only
via IO0 line in eight clocks. In addition, subsequent address and data out are shifted in/out via all four IO lines unlike
the FRDTR instruction. Eventually this operation is same as the FRQDTR in QPI mode, but the only different thing
is that AX mode is not available in the FRDTR operation in QPI mode.
The sequence of issuing FRDTR instruction in QPI mode is: CE# goes low → Sending FRDTR instruction (4-bit
per clock) → 24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → 6 dummy clocks (configurable,
default is 6 clocks) → Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → End FRDTR operation in QPI
mode by driving CE# high at any time during data out.
If the FRDTR instruction in QPI mode is issued while a Program/Erase/Write Status Register cycle is in progress
(WIP=1), the instruction will be rejected without any effect on the current cycle.
Figure 8.64 FRDTR Sequence In QPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
...
SCK
Mode 0
IO0
IO1
IO2
IO3
Instruction
= 0Dh
6 Dummy Cycles
3-byte Address
tV
Data Data
Out Out
4
0
20 16 12 8 4 0
4 0 4 0 ...
5
1
21 17 13 9 5 1
5 1 5 1 ...
6
2
22 18 14 10 6 2
6 2 6 2 ...
7
3
23 19 15 11 7 3
7 3 7 3 ...
Notes:
1. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
2. Sufficient dummy cycles are required to avoid I/O contention.
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8.40 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh)
The FRDDTR instruction enables Double Transfer Rate throughput on dual I/O of the device in read mode. The
address (interleave on dual I/O pins) is latched on both rising and falling edge of SCK, and the data (interleave on
dual I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency. The 4-bit address can be
latched-in at one clock, and 4-bit data can be read out at one clock, which means two bits at the rising edge of
clock, the other two bits at the falling edge of clock.
The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte of data is shifted out, so the whole memory can be read out with a single FRDDTR instruction. The
address counter rolls over to 0 when the highest address is reached. Once writing FRDDTR instruction, the
following address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing FRDDTR instruction is: CE# goes low → Sending FRDDTR instruction (1-bit per clock) →
24-bit address interleave on IO1 & IO0 (4-bit per clock) → 4 dummy clocks (configurable, default is 4 clocks) on
IO1 & IO0 → Data out interleave on IO1 & IO0 (4-bit per clock) → End FRDDTR operation via pulling CE# high at
any time during data out (Please refer to Figure 8.65 for 2 x I/O Double Transfer Rate Read Mode Timing Waveform).
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation
mode which enables subsequent FRDDTR execution skips command code. It saves cycles as described in Figure
8.66. When the code is different from AXh, the device exits the AX read operation. After finishing the read operation,
device becomes ready to receive a new command.
If the FRDDTR instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1), the
instruction will be rejected without any effect on the current cycle.
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Figure 8.65 FRDDTR Sequence (with command decode cycles)
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
...
13
14
SCK
Mode 0
3-byte Address
IO0
Instruction = BDh
22 20 18 16 14 12 10
4 Dummy Cycles
...
0 6 4
Mode Bits
High Impedance
IO1
23 21 19 17 15 13 11
...
1 7 5
CE #
15
16
17
18
19
20
21
22
23
24
25
26
27
28
...
29
SCK
tV
IO0
2 0
Data Out
Data Out
Data Out
Data Out
Data Out
Data Out
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 ...
Mode Bits
IO1
3 1
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 ...
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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Figure 8.66 FRDDTR AX Read Sequence (without command decode cycles)
CE #
Mode 3 0
1
2
...
6
7
8
9
10
11
12
13
14
15
16
...
SCK
Mode 0
4 Dummy Cycles
3-byte Address
IO0
22 20 18 16 14 12 10
...
0 6 4 2 0
tV
Data Out
Data Out
Data Out
6 4 2 0 6 4 2 0 6 4 2 0 ...
Mode Bits
IO1
23 21 19 17 15 13 11
...
1 7 5 3 1
7 5 3 1 7 5 3 1 7 5 3 1 ...
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the
mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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8.41 FAST READ QUAD I/O DTR MODE OPERATION IN SPI MODE (FRQDTR, EDh)
The FRQDTR instruction enables Double Transfer Rate throughput on quad I/O of the device in read mode.
A Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad I/O instruction.
The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCK, and data (interleave on 4
I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency. The 8-bit address can be latchedin at one clock, and 8-bit data can be read out at one clock, which means four bits at the rising edge of clock, the
other four bits at the falling edge of clock.
The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out with a single FRQDTR instruction. The
address counter rolls over to 0 when the highest address is reached. Once writing FRQDTR instruction, the
following address/dummy/data out will perform as 8-bit instead of previous 1-bit.
The sequence of issuing FRQDTR instruction is: CE# goes low → Sending FRQDTR instruction (1-bit per clock)
→ 24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → 6 dummy clocks (configurable, default is 6
clocks) → Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → End FRQDTR operation by driving CE#
high at any time during data out.
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation
mode which enables subsequent FRQDTR execution skips command code. It saves cycles as described in Figure
8.68. When the code is different from AXh, the device exits the AX read operation. After finishing the read operation,
device becomes ready to receive a new command.
If the FRQDTR instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1), the
instruction will be rejected without any effect on the current cycle.
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Figure 8.67 FRQDTR Sequence (with command decode cycles)
CE #
Mode 3 0
1
2
3
4
5
7
6
8
9
10
11
12
SCK
Mode 0
3-byte Address
IO0
Instruction = EDh
6 Dummy Cycles
20 16 12 8 4 0 4 0
High Impedance
IO1
21 17 13 9 5 1 5 1
IO2
22 18 14 10 6 2 6 2
IO3
23 19 15 11 7 3 7 3
Mode Bits
CE #
13
14
15
16
17
18
19
20
21
22
23
24
25
26
...
SCK
Data Data Data Data Data Data Data Data Data Data
tV Out Out Out Out Out Out Out Out Out Out
IO0
4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 ...
IO1
5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 ...
IO2
6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 ...
IO3
7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 ...
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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Figure 8.68 FRQDTR Sequence (without command decode cycles)
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
...
SCK
Mode 0
6 Dummy Cycles
3-byte Address
IO0
IO1
IO2
IO3
Data Data Data Data
tV Out Out Out Out
20 16 12 8 4 0 4 0
4 0 4 0 4 0 4 0 ...
21 17 13 9 5 1 5 1
5 1 5 1 5 1 5 1 ...
22 18 14 10 6 2 6 2
6 2 6 2 6 2 6 2 ...
23 19 15 11 7 3 7 3
7 3 7 3 7 3 7 3 ...
Mode Bits
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the
mode bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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FAST READ QUAD IO DTR MODE OPERATION IN QPI MODE (FRQDTR, EDh)
The FRQDTR instruction in QPI mode utilizes all four IO lines to input the instruction code so that only two clocks
are required, while the FRQDTR instruction requires that the byte-long instruction code is shifted into the device
only via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQDTR instruction in QPI
mode. In addition, subsequent address and data out are shifted in/out via all four IO lines like the FRQDTR
instruction. In fact, except for the command cycle, the FRQDTR operation in QPI mode is exactly same as the
FRQDTR operation in SPI mode.
It is not required to set QE bit to “1”.before Fast Read Quad I/O DTR instruction in QPI mode.
The sequence of issuing FRQDTR instruction in QPI mode is: CE# goes low → Sending FRQDTR instruction (4bit per clock) → 24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → 6 dummy clocks (configurable,
default is 6 clocks) → Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → End FRQDTR operation by
driving CE# high at any time during data out.
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation
mode which enables subsequent FRQDTR execution skips command code. When the code is different from AXh,
the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new
command.
If the FRQDTR instruction in QPI mode is issued while a Program/Erase/Write Status Register cycle is in progress
(WIP=1), the instruction will be rejected without any effect on the current cycle.
Figure 8.69 FRQDTR Sequence In QPI Mode (with command decode cycles)
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
...
SCK
Mode 0
IO0
IO1
IO2
IO3
Instruction
= EDh
6 Dummy Cycles
3-byte Address
tV
Data Data
Out Out
4
0
20 16 12 8 4 0 4 0
4 0 4 0 ...
5
1
21 17 13 9 5 1 5 1
5 1 5 1 ...
6
2
22 18 14 10 6 2 6 2
6 2 6 2 ...
7
3
23 19 15 11 7 3 7 3
7 3 7 3 ...
Mode Bits
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are
same, then X should be Hi-Z.
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8.42 SECTOR LOCK/UNLOCK FUNCTIONS
SECTOR UNLOCK OPERATION (SECUNLOCK, 26h)
The Sector Unlock command allows the user to select a specific sector to allow program and erase operations.
This instruction is effective when the blocks are designated as write-protected through the BP0, BP1, BP2, and
BP3 bits in the Status Register. Only one sector can be enabled at any time. To enable a different sector, a
previously enabled sector must be disabled by executing a Sector Lock command. The instruction code is followed
by a 24-bit address specifying the target sector, but A0 through A11 are not decoded. The remaining sectors within
the same block remain as read-only.
Figure 8.70 Sector Unlock Sequence In SPI Mode
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
1
0
SCK
Mode 0
3-byte Address
SI
SO
Instruction = 26h
23
22
21
...
4
5
6
7
7:4
3:0
3
2
High Impedance
Figure 8.71 Sector Unlock Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
SCK
Mode 0
Instruction
IO[3:0]
26h
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23:20 19:16 15:12 11:8
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SECTOR LOCK OPERATION (SECLOCK, 24h)
The Sector Lock command relocks a sector that was previously unlocked by the Sector Unlock command. The
instruction code does not require an address to be specified, as only one sector can be enabled at a time. The
remaining sectors within the same block remain in read-only mode.
Figure 8.72 Sector Lock Sequence In SPI Mode
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
Instruction = 24h
SI
High Impedance
SO
Figure 8.73 Sector Lock Sequence In QPI Mode
CE#
Mode 3 0
1
SCK
Mode 0
IO[3:0]
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8.43 AUTOBOOT
SPI devices normally require 32 or more cycles of command and address shifting to initiate a read command. And,
in order to read boot code from an SPI device, the host memory controller or processor must supply the read
command from a hardwired state machine or from some host processor internal ROM code.
Parallel NOR devices need only an initial address, supplied in parallel in a single cycle, and initial access time to
start reading boot code.
The AutoBoot feature allows the host memory controller to take boot code from the device immediately after the
end of reset, without having to send a read command. This saves 32 or more cycles and simplifies the logic needed
to initiate the reading of boot code.
• As part of the Power-up Reset, Hardware Reset, or Software Reset process the AutoBoot feature automatically
starts a read access from a pre-specified address. At the time the reset process is completed, the device is
ready to deliver code from the starting address. The host memory controller only needs to drive CE# signal from
high to low and begin toggling the SCK signal. The device will delay code output for a pre-specified number of
clock cycles before code streams out.
– The Auto Boot Start Delay (ABSD) field of the AutoBoot register specifies the initial delay if any is needed by
the host.
– The host cannot send commands during this time.
– If QE bit (Bit 6) in the Status Register is set to “1”, Fast Read Quad I/O operation will be selected and initial
delay is the same as dummy cycles of Fast Read Quad I/O Read operation. If it is set to “0”, Fast Read
operation will be applied and initial delay is the same as dummy cycles of Fast Read operation. Maximum
operation frequency will be 133MHz for both operations.
• The starting address of the boot code is selected by the value programmed into the AutoBoot Start Address
(ABSA) field of the AutoBoot Register.
– Data will continuously shift out until CE# returns high.
• At any point after the first data byte is transferred, when CE# returns high, the SPI device will reset to standard
SPI mode; able to accept normal command operations.
– A minimum of one byte must be transferred.
– AutoBoot mode will not initiate again until another power cycle or a reset occurs.
• An AutoBoot Enable bit (ABE) is set to enable the AutoBoot feature.
The AutoBoot register bits are non-volatile and provide:
• The starting address set by the AutoBoot Start Address (ABSA).
• The number of initial delay cycles, set by the AutoBoot Start Delay (ABSD) 4-bit count value.
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Figure 8.74 AutoBoot Sequence (QE = 0)
CE #
Mode 3
0
1
2
...
n-1
n
n+2
n+1
n+3
n+4
n+5
n+6
n+7
n+8
n+9
...
n+10
SCK
Mode 0
SI
ABSD Delay (n)
tV
SO
7
6
5
3
4
2
1
0
7
...
6
High Impedance
Data Out 1
Data Out 2
...
Figure 8.75 AutoBoot Sequence (QE = 1)
CE #
Mode 3
0
1
2
...
n-1
n+2
n+1
n
n+3
n+4
n+5
n+7
n+6
n+9
n+8
n+10
SCK
Mode 0
ABSD Delay (n)
tV
IO0
4
0
4
0
4
0
4
0
4
0
...
IO1
5
1
5
1
5
1
5
1
5
1
...
IO2
6
2
6
2
6
2
6
2
6
2
...
IO3
7
3
7
3
7
3
7
3
7
3
...
High Impedance
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96
...
...
IS25LP032D
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AUTOBOOT REGISTER READ OPERATION (RDABR, 14h)
The AutoBoot Register Read command is shifted in. Then the 32-bit AutoBoot Register is shifted out, least
significant byte first, most significant bit of each byte first. It is possible to read the AutoBoot Register continuously
by providing multiples of 32 bits.
Figure 8.76 RDABR Sequence In SPI Mode
CE #
Mode 3
0
1
2
3
4
5
6
8
7
9
10
11
12
13
14
...
15
SCK
Mode 0
SI
Instruction = 14h
tV
SO
7
6
5
4
3
2
1
Data Out 1
Figure 8.77 RDABR Sequence In QPI Mode
CE#
Mode 3 0
1
2
...
3
SCK
Mode 0
tV
IO[3:0]
14h
7:4
3:0
...
Data Out
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AUTOBOOT REGISTER WRITE OPERATION (WRABR, 15h)
Before the WRABR command can be accepted, a Write Enable (WREN) command must be issued and decoded
by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.
The WRABR command is entered by shifting the instruction and the data bytes, least significant byte first, most
significant bit of each byte first. The WRABR data is 32 bits in length.
CE# must be driven high after the 32nd bit of data has been latched. If not, the WRABR command is not executed.
As soon as CE# is driven high, the WRABR operation is initiated. While the WRABR operation is in progress, Status
Register may be read to check the value of the Write-In Progress (WIP) bit. The WIP bit is “1” during the WRABR
operation, and is a 0 when it is completed. When the WRABR cycle is completed, the WEL is set to “0”.
Figure 8.78 WRABR Sequence In SPI Mode
CE #
Mode 3
0
1
2
3
4
5
7
6
8
9
10
11
12
13
14
15
7
6
5
4
3
2
1
0
...
SCK
Mode 0
SI
Instruction = 15h
Data In 1
SO
High Impedance
Figure 8.79 WRABR Sequence In QPI Mode
CE#
Mode 3 0
1
2
3
7:4
3:0
...
SCK
Mode 0
IO[3:0]
15h
...
Data In 1
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9. ELECTRICAL CHARACTERISTICS
9.1 ABSOLUTE MAXIMUM RATINGS (1)
Storage Temperature
Input Voltage with Respect to Ground on All Pins
All Output Voltage with Respect to Ground
IS25LP
IS25WP
VCC
Electrostatic Discharge Voltage (Human Body Model)(2)
-65°C to +150°C
-0.5V to VCC + 0.5V
-0.5V to VCC + 0.5V
-0.5V to +6.0V
-0.5V to +2.5V
-2000V to +2000V
Notes:
1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. ANSI/ESDA/JEDEC JS-001
9.2 OPERATING RANGE
Operating Temperature
VCC Power Supply
Extended Grade E
-40°C to 105°C
Automotive Grade A3
-40°C to 125°C
IS25LP
2.3V (VMIN) – 3.6V (VMAX); 3.0V (Typ)
IS25WP
1.65V (VMIN) –1.95V (VMAX); 1.8V (Typ)
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9.3 DC CHARACTERISTICS
(Under operating range)
Symbol
ICC1
Typ(2)
Max
NORD at 50MHz,
4
12
FRD Single at 133MHz
6
14
FRD Dual at 133MHz
8
15
FRD Quad at 133MHz
10
17
FRD Quad at 84MHz
8
15
FRD Quad at 104MHz
9
16
FRD Single DTR at 66MHz
6
14
FRD Dual DTR at 66MHz
8
15
FRD Quad DTR at 66MHz
10
17
Parameter
Condition
VCC Active Read current(3)
Min
85°C
ICC2
ICC3
VCC Program Current
CE# = VCC
VCC WRSR Current
CE# = VCC
Units
mA
25
105°C
22
25
125°C
25
85°C
25
105°C
22
25
125°C
25
85°C
25
mA
ICC4
VCC Erase Current
(SER/BER32/BER64)
CE# = VCC
105°C
22
25
125°C
25
85°C
ICC5
ISB1
VCC Erase Current (CE)
CE# = VCC
VCC Standby Current CMOS
CE# = VCC,
VIN = GND or VCC (4)
IS25LP
ISB2
Deep power down
current
25
105°C
22
125°C
25
85°C
22 (6)
105°C
IS25WP
28 (6)
10
125°C
45
85°C
12(6)
105°C
CE# = VCC,
VIN = GND or VCC (4)
25
18(6)
8
125°C
25
5(6)
85°C
105°C
Input Leakage Current
ILO
VIL
Output Leakage Current
(1)
µA
10(6)
1
125°C
ILI
µA
15
VIN = 0V to VCC
±1(5)
µA
VIN = 0V to VCC
(5)
µA
±1
Input Low Voltage
-0.5
0.3VCC
V
VIH(1)
Input High Voltage
0.7VCC
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 100 µA
0.2
V
VOH
Output High Voltage
IOH = -100 µA
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Notes:
1. Maximum DC voltage on input or I/O pins is VCC + 0.5V. During voltage transitions, input or I/O pins may overshoot
VCC by + 2.0V for a period of time not to exceed 20ns. Minimum DC voltage on input or I/O pins is
-0.5V. During voltage transitions, input or I/O pins may undershoot GND by -2.0V for a period of time not to exceed
20ns.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC
= VCC (Typ), TA=25°C.
3. Outputs are unconnected during reading data so that output switching current is not included.
4. VIN = Vcc for the dedicated RESET# pin (or ball).
5. The Max of ILI and ILO for the dedicated RESET# pin (or ball) is ±2 µA.
6. These parameters are characterized and are not 100% tested.
9.4 AC MEASUREMENT CONDITIONS
Symbol
CL
Parameter
Min
Max
Units
Load Capacitance up to 104MHz
30
pF
Load Capacitance up to 133MHz
15
pF
5
ns
TR,TF
Input Rise and Fall Times
VIN
Input Pulse Voltages
0.2VCC to 0.8VCC
V
VREFI
Input Timing Reference Voltages
0.3VCC to 0.7VCC
V
VREFO
Output Timing Reference Voltages
0.5VCC
V
Figure 9.1 Output test load & AC measurement I/O Waveform
0.8VCC
VCC/2
AC
Measurement
Level
IS25LP
IS25WP
Input
1.8k
0.2VCC
OUTPUT PIN
1.2k
15/30pf
9.5 PIN CAPACITANCE
(TA = 25°C, VCC=3V (IS25LPx), 1.8V (IS25WPx), 1MHz)
Symbol
CIN
CIN/OUT
Parameter
Test Condition
Input Capacitance
(CE#, SCK)
Input/Output Capacitance
(other pins)
Max
Min
Max
VIN = 0V
-
6
-
6
pF
VIN/OUT = 0V
-
8
-
10
pF
Notes:
1. These parameters are characterized and are not 100% tested.
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Min
101
IS25LP032D
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9.6 AC CHARACTERISTICS
(Under operating range, refer to section 9.4 for AC measurement conditions)
Symbol
fCT
Parameter
Clock Frequency except for fast read Quad I/O, QPI,
DTR and read (03h)
IS25LP
Clock Frequency for fast read Quad I/O
and QPI
IS25WP
fC
Clock Frequency for fast read DTR:
SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, and
QPI DTR.
Clock Frequency for read (03h)
tCLCH(1)
SCK Rise Time (peak to peak)
(1)
SCK Fall Time ( peak to peak)
tCHCL
Min
Typ(2)
Max
Units
0
133
0
133
0
104
0
66
MHz
0
50
MHz
MHz
0.1
V/ns
0.1
V/ns
For read (03h)
0.45 x 1/fCmax
For others
0.45 x 1/fCTmax
For read (03h)
0.45 x 1/fCmax
For others
0.45 x 1/fCTmax
tCKH
SCK High Time
tCKL
SCK Low Time
tCEH
CE# High Time
7
ns
tCS
CE# Active Setup Time
5
ns
tCH
CE# Active Hold Time
5
ns
tCHSL
CE# Not Active Hold Time
2.7
ns
tSHCH
CE# Not Active Setup Time
2.7
ns
tDS
Data In Setup Time
tDH
Data in Hold Time
tV
Output Valid
tOH
tDIS
STR
2
DTR
1.5
STR
2
DTR
1.5
tWHSL
ns
ns
ns
@ 133MHz (CL = 15pF)
7
@ 104MHz (CL = 30pF)
8
Output Hold Time
(1)
ns
2
ns
Output Disable Time
(3)
ns
8
ns
Write Protect Setup Time
20
ns
tSHWL(3)
Write Protect Hold Time
100
ns
tHLCH
HOLD Active Setup Time relative to SCK
2
ns
tCHHH
HOLD Active Hold Time relative to SCK
2
ns
tHHCH
HOLD Not Active Setup Time relative to SCK
2
ns
tCHHL
HOLD Not Active Hold Time relative to SCK
2
ns
tLZ(1)
HOLD to Output Low Z
tHZ(1)
HOLD to Output High Z
tEC
ns
12
ns
Sector Erase Time (4Kbyte)
70
300
ms
Block Erase Time (32Kbyte)
0.1
0.5
s
Block Erase time (64Kbyte)
0.15
1.0
s
Chip Erase Time (32Mb)
tPP
12
Page Program Time
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24
s
0.2
0.8
ms
102
IS25LP032D
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Symbol
Parameter
tRES1(1)
Release deep power down
tDP(1)
Deep power down
tW
Write Status Register time
tSUS
(1)
tRESET(1)
tHWRST
(1)
Max
3
IS25WP
5
Resume to next suspend
(1)
Typ(2)
IS25LP
Suspend to read ready
tRS(1)
tSRST
Min
µs
3
µs
2
15
ms
-
100
µs
80
-
µs
35
µs
Software Reset recovery time
RESET# pin low pulse width
Units
100
ns
Hardware Reset recovery time
35
µs
Notes:
1. These parameters are characterized and not 100% tested.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC
= VCC (Typ), TA=25°C.
3. Only applicable as a constraint for a WRITE STATUS REGISTER command when SRWD is set at 1.
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9.7 SERIAL INPUT/OUTPUT TIMING
Figure 9.2 SERIAL INPUT TIMING (STR Mode)
tCEH
CE#
tCHSL
tCS
tCH
tSHCH
SCK
tDS
tDH
MSB IN
SI or IO
LSB IN
Figure 9.3 SERIAL INPUT TIMING (DTR Mode)
tCEH
CE#
tCHSL
tCH
tCS
tSHCH
SCK
tDS
tDH
SI or IO
MSB
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104
IS25LP032D
IS25WP032D
Figure 9.4 OUTPUT TIMING (STR Mode)
CE#
tCKH
SCK
tV
tOH
tCKL
MSB OUT
SO or IO
tDIS
LSB OUT
Figure 9.5 OUTPUT TIMING (DTR Mode)
CE#
tCKH
SCK
tV
SO or IO
tOH
MSB
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tCKL
tDIS
LSB
105
IS25LP032D
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Figure 9.6 HOLD TIMING
CE#
tHLCH
tCHHL
tHHCH
SCK
tCHHH
tHZ
tLZ
SO
SI
HOLD#
Figure 9.7 WRITE PROTECT SETUP AND HOLD TIMIMNG DURING WRITE STATUS REGISTER (SRWD=1)
WP#
tWHSL
tSHWL
CE #
Mode 3 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2
1
0
SCK
Mode 0
SI
SO
Data In
Instruction = 01h
7
6
5
4
3
High Impedence
Note: WP# must be kept high until the embedded operation finish.
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IS25WP032D
9.8 POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must be NOT SELECTED until Vcc reaches at the right level. (Adding a
simple pull-up resistor on CE# is recommended.)
Figure 9.8 Power up timing
VCC
VCC ( max)
Chip Selection Not Allowed
VCC(min)
tVCE
= Vcc min. to CE# Low
Device is fully
accessible
VWI
Time
Symbol
Parameter
tVCE(1)
Vcc(min) to CE# Low
VWI(1)
Write Inhibit Voltage
Min.
Max
300
us
IS25LP
2.1
IS25WP
1.4
Note: These parameters are characterized and not 100% tested.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A14
02/20/2022
Unit
107
V
IS25LP032D
IS25WP032D
9.9 PROGRAM/ERASE PERFORMANCE
Parameter
Typ
Max
Unit
Sector Erase Time (4Kbyte)
70
300
ms
Block Erase Time (32Kbyte)
0.1
0.5
s
Block Erase Time (64Kbyte)
0.15
1.0
s
Chip Erase Time (32Mb)
8
24
Page Programming Time
0.2
0.8
ms
Byte Program
8
40
µs
Note: These parameters are characterized and not 100% tested.
9.10 RELIABILITY CHARACTERISTICS
Parameter
Min
Max
Unit
Test Method
Endurance
100,000
-
Cycles
JEDEC Standard A117
Data Retention
20
-
Years
JEDEC Standard A117
Latch-Up
-100
+100
mA
JEDEC Standard 78
Note: These parameters are characterized and not 100% tested.
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IS25WP032D
10. PACKAGE TYPE INFORMATION
10.1 8-PIN JEDEC 208MIL BROAD SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) PACKAGE (B)
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10.2 8-PIN JEDEC 150MIL BROAD SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) PACKAGE (N)
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IS25LP032D
IS25WP032D
10.3 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (USON) PACKAGE 4X3MM (T)
Note:
1. Please click here to refer to Application Note (AN25D011, Thin USON/WSON/XSON package
handling precautions) for assembly guidelines.
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IS25LP032D
IS25WP032D
10.4 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 6X5MM (K)
Note:
1. Please click here to refer to Application Note (AN25D011, Thin USON/WSON/XSON package
handling precautions) for assembly guidelines.
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IS25LP032D
IS25WP032D
10.5 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 8X6MM (L)
Note:
1. Please click here to refer to Application Note (AN25D011, Thin USON/WSON/XSON package
handling precautions) for assembly guidelines.
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IS25LP032D
IS25WP032D
10.6 16-PIN JEDEC 300MIL SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) PACKAGE (M)
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IS25LP032D
IS25WP032D
10.7 24-BALL THIN PROFILE FINE PITCH BGA 6X8MM 4X6 ARRAY (G)
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IS25WP032D
10.8 24-BALL THIN PROFILE FINE PITCH BGA 6X8MM 5X5 ARRAY (H)
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IS25LP032D
IS25WP032D
10.9 8-CONTACT EXTREMELY-THIN SMALL OUTLINE NO-LEAD (XSON) PACKAGE 4X4MM (E)
Note:
1. Please click here to refer to Application Note (AN25D011, Thin USON/WSON/XSON package
handling precautions) for assembly guidelines.
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Rev. A14
02/20/2022
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IS25LP032D
IS25WP032D
11. ORDERING INFORMATION - Valid Part Numbers
IS25LP 032 D -
J
B
L
E :P
PBO (Polybenzoxazole) LAYER
:P = Die Overcoat process-PBO layer (Call Factory)
Blank = Without Die Overcoat process-PBO layer
TEMPERATURE RANGE
E = Extended (-40°C to +105°C)
A3 = Automotive Grade (-40°C to +125°C)
PACKAGING CONTENT
L = RoHS compliant
PACKAGE Type (1)
B = 8-pin SOIC 208mil
N = 8-pin SOIC 150mil
T = 8-contact USON 4x3mm
E = 8-contact XSON 4x4mm
K = 8-contact WSON 6x5mm
L = 8-contact WSON 8x6mm (Call Factory)
M = 16-pin SOIC 300mil
G = 24-ball TFBGA (6x8mm) 4x6 ball array (Call Factory)
H = 24-ball TFBGA (6x8mm) 5x5 ball array (Call Factory)
W = KGD (Call Factory)
Option
J = Standard
R = Dedicated RESET# pin for 16-pin SOIC/24-ball TFBGA
Q = QE bit set to 1 (Call Factory)
Die Revision
D = Revision D
Density
032 = 32 Megabit
BASE PART NUMBER
IS = Integrated Silicon Solution Inc.
25LP = FLASH, 2.30V ~ 3.60V, QPI
25WP = FLASH, 1.65V ~ 1.95V, QPI
Note:
1. Call Factory for other package options available
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IS25WP032D
Density,
Voltage
32Mb,
3V
32Mb,
1.8V
Frequency (MHz)
STR 133,
DTR 66
STR 133,
DTR 66
Order Part Number
Package
IS25LP032D-JBLE
8-pin SOIC 208mil
IS25LP032D-QBLE
8-pin SOIC 208mil
IS25LP032D-JNLE
8-pin SOIC 150mil
IS25LP032D-QNLE
8-pin SOIC 150mil
IS25LP032D-JTLE
8-contact USON 4x3mm
IS25LP032D-JELE
8-contact XSON 4x4mm
IS25LP032D-JKLE
8-contact WSON 6x5mm
IS25LP032D-RMLE
16-pin SOIC 300mil
IS25LP032D-RGLE
24-ball TFBGA 6x8mm 4x6 ball array (Call Factory)
IS25LP032D-RHLE
24-ball TFBGA 6x8mm 5x5 ball array (Call Factory)
IS25LP032D-JBLA3
8-pin SOIC 208mil
IS25LP032D-QBLA3
8-pin SOIC 208mil
IS25LP032D-JNLA3
8-pin SOIC 150mil
IS25LP032D-QNLA3
8-pin SOIC 150mil
IS25LP032D-JTLA3
8-contact USON 4x3mm
IS25LP032D-QTLA3
8-contact USON 4x3mm
IS25LP032D-JELA3
8-contact XSON 4x4mm
IS25LP032D-JKLA3
8-contact WSON 6x5mm
IS25LP032D-JLLA3
8-contact WSON 8x6mm
IS25LP032D-RMLA3
16-pin SOIC 300mil
IS25LP032D-RGLA3
24-ball TFBGA 6x8mm 4x6 ball array (Call Factory)
IS25LP032D-RHLA3
24-ball TFBGA 6x8mm 5x5 ball array (Call Factory)
IS25WP032D-JBLE
8-pin SOIC 208mil
IS25WP032D-QBLE
8-pin SOIC 208mil
IS25WP032D-JNLE
8-pin SOIC 150mil
IS25WP032D-QNLE
8-pin SOIC 150mil
IS25WP032D-JTLE
8-contact USON 4x3mm
IS25WP032D-JELE
8-contact XSON 4x4mm
IS25WP032D-JKLE
8-contact WSON 6x5mm
IS25WP032D-RMLE
16-pin SOIC 300mil
IS25WP032D-RGLE
24-ball TFBGA 6x8mm 4x6 ball array (Call Factory)
IS25WP032D-RHLE
24-ball TFBGA 6x8mm 5x5 ball array (Call Factory)
IS25WP032D-JBLA3
8-pin SOIC 208mil
IS25WP032D-QBLA3
8-pin SOIC 208mil
IS25WP032D-JNLA3
8-pin SOIC 150mil
IS25WP032D-QNLA3
8-pin SOIC 150mil
IS25WP032D-JTLA3
8-contact USON 4x3mm
IS25WP032D-JELA3
8-contact XSON 4x4mm
IS25WP032D-JKLA3
8-contact WSON 6x5mm
IS25WP032D-RMLA3
16-pin SOIC 300mil
IS25WP032D-RGLA3
24-ball TFBGA 6x8mm 4x6 ball array (Call Factory)
IS25WP032D-RHLA3
24-ball TFBGA 6x8mm 5x5 ball array (Call Factory)
Notes:
2. A3 meets AEC-Q100 requirements with PPAP.
Temp Grades: E= -40 to 105°C, A3= -40 to 125°C
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Rev. A14
02/20/2022
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