IS25LQ020A-JNLE

IS25LQ020A 2M-BIT 3V- QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LQ020A: 256K x 8 (2 Mbit) • Cost Effective Sector/Block Architecture -2 Mb : Uniform 4KByte sectors / four uniform 64KByte blocks • Serial Peripheral Interface (SPI) Compatible - Supports single-, dual- or quad-output - Supports SPI Modes 0 and 3 - Maximum 33 MHz clock rate for normal read - Maximum 80 MHz clock rate for fast read - Maximum 160 MHz clock rate equivalent Dual SPI - Maximum 320 MHz clock rate equivalent Quad SPI • Page Program (up to 256 Bytes) Operation - Max 0.4 ms per page program • Sector, Block or Chip Erase Operation - Maximum 10 ms sector, block or chip erase • Low Power Consumption - Typical 10 mA active read current - Typical 5 mA program/erase current • Hardware Write Protection - Protect and unprotect the device from write operation by Write Protect (WP#) Pin • Software Write Protection - The Block Protect (BP2, BP1, BP0) bits allow partial or entire memory to be configured as readonly • High Product Endurance - Guaranteed 100,000 program/erase cycles - Minimum 20 years data retention • Industrial Standard Pin-out and Package - 8-pin 150mil SOIC - 8-pin 150mil VVSOP - 8-pin TSSOP - Lead-free (Pb-free) GENERAL DESCRIPTION The IS25LQ020A are Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad-output. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 80 MHz in fast read, the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers. The IS25LQ020A are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (SlO), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. The devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in one program operation. These devices are divided into uniform 4 KByte sectors or 64 KByte Blocks in the IS25LQ020A. The IS25LQ020A are manufactured on ISSI™’s advanced non-volatile technology. The devices are offered in 8pin SOIC/VVSOP 150mil & 8-pin TSSOP. Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 1 IS25LQ020A CONNECTION DIAGRAMS CE# 1 8 Vcc SO (IO1) 2 7 WP# (IO2) 3 6 SCK GND 4 5 SI (IO0) CE# SO WP# GND 1 2 3 4 8 7 6 5 Vcc HOLD# SCK SI HOLD# (IO3) 8-Pin TSSOP 8-Pin SOIC/VVSOP PIN DESCRIPTIONS SYMBOL TYPE DESCRIPTION CE# INPUT SCK SI (IO0) SO (IO1) GND Vcc WP# (IO2) INPUT INPUT/OUTPUT OUTPUT HOLD# (IO3) INPUT Chip Enable: CE# low activates the devices internal circuitries for device operation. CE# high deselects the devices and switches into standby mode to reduce the power consumption. When a device is not selected, data will not be accepted via the serial input pin (Sl), and the serial output pin (SO) will remain in a high impedance state. Serial Data Clock Serial Data Input/Output Serial Data Input/Output Ground Device Power Supply Write Protect/Serial Data Output: A hardware program/erase protection for all or part of a memory array. When the WP# pin is low, memory array write-protection depends on the setting of BP3, BP2, BP1 and BP0 bits in the Status Register. When the WP# is high, the devices are not write-protected. When the QE bit of is set “1”, the /WP pin (Hardware Write Protect) function is not available since this pin is used for IO2 Hold/ Serial Data Output: Pause serial communication by the master device without resetting the serial sequence. When the QE bit of Status Register-2 is set for “1”, the HOLD# pin function is not available since this pin is used for IO3. INPUT/OUTPUT Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 2 IS25LQ020A BLOCK DIAGRAM WP# (IO3) SI (IO0) SO (IO1) HOLD# (IO2) Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 3 IS25LQ020A SPI MODES DESCRIPTION Multiple IS25LQ020A devices can be connected on the SPI serial bus and controlled by a SPI Master, i.e. microcontroller, as shown in Figure 1. The devices support either of two SPI modes: Mode 0 (0, 0) Mode 3 (1, 1) The difference between these two modes is the clock polarity when the SPI master is in Stand-by mode: the serial clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer to Figure 2. For both modes, the input data is latched on the rising edge of Serial Clock (SCK), and the output data is available from the falling edge of SCK. Figure 1. Connection Diagram among SPI Master and SPI Slaves (Memory Devices) SDO SPI Interface with (0,0) or (1,1) SDI SCK SCK SPI Master (i.e. Microcontroller) CS3 CS2 SO SI SCK SPI Memory Device CS1 CE# WP# SO SI SCK CE# WP# CE# HOLD# SI SPI Memory Device SPI Memory Device HOLD# SO WP# HOLD# Note: 1. The Write Protect (WP#) and Hold (HOLD#) signals should be driven high or low as appropriate. Figure 2. SPI Modes Supported SCK Mode 0 (0,0) SCK Mode 3 (1,1) SI MSb Input mode SO Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 MSb 4 IS25LQ020A SYSTEM CONFIGURATION The IS25LQ020A devices are designed to interface directly with the synchronous Serial Peripheral Interface (SPI) of the Motorola MC68HCxx series of microcontrollers or any SPI interface-equipped system controllers. The IS25LQ020A memory array is divided into uniform 4 KByte sectors or uniform 64 KByte blocks (a block consists of sixteen adjacent sectors on the 2Mb). Table 1 illustrates the memory map of the devices. BLOCK/SECTOR ADDRESSES Table 1. Block/Sector Addresses of IS25LQ020A Memory Density Block No. Block 0 Block Size (KBytes) 64 2 Mbit Sector No. Sector Size (KBytes) Address Range Sector 0 4 000000h - 000FFFh Sector 1 : Sector 15 Sector 16 4 : 4 4 001000h - 001FFFh 4 : 4 : : 01F000h - 01FFFFh : 4 030000h – 03FFFFh Block 1 64 : : Sector 17 : Sector 31 : Block 3 64 : Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 : 00F000h - 00FFFFh 010000h - 010FFFh 011000h - 011FFFh 5 IS25LQ020A REGISTERS STATUS REGISTER Refer to Tables 5 and 6 for Status Register Format and BP2, BP1, BP0 bits: The Block Protection (BP2, BP1 Status Register Bit Definitions. and BP0) bits are used to define the portion of the memory area to be protected. Refer to Tables 7, 8 and The BP0, BP1, BP2 and SRWD are non-volatile 9 for the Block Write Protection bit settings. When a memory cells that can be written by a Write Status defined combination of BP2, BP1 and BP0 bits are set, Register (WRSR) instruction. The default value of the the corresponding memory area is protected. Any BP2, BP1, BP0, and SRWD bits were set to “0” at program or erase operation to that area will be factory. The Status Register can be read by the Read inhibited. Note: a Chip Erase (CHIP_ER) instruction is Status Register (RDSR). Refer to Table 10 for executed only if all the Block Protection Bits are set as Instruction Set. “0”s. The function of Status Register bits are described as follows: WIP bit: The Write In Progress (WIP) bit is read-only, and can be used to detect the progress or completion of a program or erase operation. When the WIP bit is “0”, the device is ready for a write status register, program or erase operation. When the WIP bit is “1”, the device is busy. WEL bit: The Write Enable Latch (WEL) bit indicates the status of the internal write enable latch. When the WEL is “0”, the write enable latch is disabled, and all write operations, including write status register, page program, sector erase, block and chip erase operations are inhibited. When the WEL bit is “1”, write operations are allowed. The WEL bit is set by a Write Enable (WREN) instruction. Each write register, program and erase instruction must be preceded by a WREN instruction. The WEL bit can be reset by a Write Disable (WRDI) instruction. It will automatically be the reset after the completion of a write instruction. SRWD bit: The Status Register Write Disable (SRWD) bits operates in conjunction with the Write Protection (WP#) signal to provide a Hardware Protection Mode. When the SRWD is set to “0”, the Status Register is not write-protected. When the SRWD is set to “1” and the WP# is pulled low (VIL), the bits of Status Register (SRWD, BP2, BP1, BP0) become read-only, and a WRSR instruction will be ignored. If the SRWD is set to “1” and WP# is pulled high (VIH), the Status Register can be changed by a WRSR instruction. QE bit: The Quad Enable (QE) is a non-volatile bit in the status register that allows Quad operation. When the QE bit is set to “0”,the pin WP# and HOLD# are enable. When the QE bit is set to “1”, the pin IO2 and IO3 are enable. WARNING: The QE bit should never be set to a 1 during standard SPI or Dual SPI operation if the WP# or HOLD# pins are tied directly to the power supply or ground. Table 5. Status Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 SRWD1 QE x BP2 BP1 BP0 WEL Default (flash bit) 0 0 0 0 0 0 0 * The default value of the BP2, BP1, BP0, and SRWD bits were set to “0” at factory. Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 Bit 0 WIP 0 6 IS25LQ020A REGISTERS (CONTINUED) Table 6. Status Register Bit Definition Bit Name Bit 0 WIP Bit 1 WEL Bit 2 Bit 3 Bit 4 Bit 5 BP0 BP1 BP2 X Bit 6 QE Bit 7 SRWD Definition Write In Progress Bit: "0" indicates the device is ready "1" indicates a write cycle is in progress and the device is busy Write Enable Latch: "0" indicates the device is not write enabled (default) "1" indicates the device is write enabled Block Protection Bit: (See Tables 7, 8 and 9 for details) "0" indicates the specific blocks are not write-protected (default) "1" indicates the specific blocks are write-protected Quad Enable bit: “0” indicates the Quad output function disable (default) “1” indicates the Quad output function enable Status Register Write Disable: (See Table 10 for details) "0" indicates the Status Register is not write-protected (default) "1" indicates the Status Register is write-protected Read/Write Non-Volatile bit R No R/W No R/W Yes R/W Yes R/W Yes Table 7. Block Write Protect Bits for IS25LQ020A Status Register Bits BP2 BP1 BP0 0 0 0 0 0 1 0 1 0 0 1 1 Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 IS25LQ020A- Protected Memory Area 2 Mbit None Upper quarter (block : 3): 030000h - 03FFFFh Upper quarter (two blocks :2 and 3): 020000h - 03FFFFh All Blocks 7 IS25LQ020A REGISTERS (CONTINUED) PROTECTION MODE The IS25LQ020A have two types of write-protection mechanisms: hardware and software. These are used to prevent irrelevant operation in a possibly noisy environment and protect the data integrity. HARDWARE WRITE-PROTECTION The devices provide two hardware write-protection features: a. When inputting a program, erase or write status register instruction, the number of clock pulse is checked to determine whether it is a multiple of eight before the executing. Any incomplete instruction command sequence will be ignored. b. Write inhibit is 2.0V, all write sequence will be ignored when Vcc drop to 2.0V and lower. c. The Write Protection (WP#) pin provides a hardware write protection method for BP3, BP2, BP1, BP0 and SRWD in the Status Register. Refer to the STATUS REGISTER description. The IS25LQ020A also provides two software write protection features: a. Before the execution of any program, erase or write status register instruction, the Write Enable Latch (WEL) bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not enabled first, the program, erase or write register instruction will be ignored. b. The Block Protection (BP2, BP1, BP0) bits allow part or the whole memory area to be writeprotected. Table 10. Hardware Write Protection on Status Register SRWD 0 1 0 1 WP# Low Low High High Status Register Writable Protected Writable Writable SOFTWARE WRITE PROTECTION DEVICE OPERATION The IS25LQ020A utilize an 8-bit instruction register. Refer to Table 11 Instruction Set for details of the Instructions and Instruction Codes. All instructions, addresses, and data are shifted in with the most significant bit (MSB) first on Serial Data Input (SI). The input data on SI is latched on the rising edge of Serial Clock (SCK) after Chip Enable (CE#) is driven low (VIL). Every instruction sequence starts with a one-byte Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 instruction code and is followed by address bytes, data bytes, or both address bytes and data bytes, depending on the type of instruction. CE# must be driven high (VIH) after the last bit of the instruction sequence has been shifted in. The timing for each instruction is illustrated in the following operational descriptions. 8 IS25LQ020A Table 11. Instruction Set Instruction Name Hex Code Operation Command Cycle Maximum Frequency RDID/RDES JEDEC ID READ RDMDID WREN WRDI RDSR WRSR READ FAST_READ FRDO FRDIO FRQO FRQIO MR PAGE_ PROG ABh 9Fh 90h 06h 04h 05h 01h 03h 0Bh 3Bh BBh 6Bh EBh FFh 02h Read Product ID and Release from Deep Power Down Read Manufacturer and Product ID by JEDEC ID Command Read Manufacturer and Device ID Write Enable Write Disable Read Status Register Write Status Register Read Data Bytes from Memory at Normal Read Mode Read Data Bytes from Memory at Fast Read Mode Fast Read Dual Output Fast Read Dual I/O Fast Read Quad Output Fast Read Quad I/O Mode Reset Page Program Data Bytes Into Memory 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 33 MHz 80 MHz 80 MHz 80MHz 80 MHz 80MHz 80MHz 80 MHz SECTOR_ER D7h/ 20h D8h C7h/ 60h 32h Sector Erase 4 Bytes 1 Byte 4 Bytes 1 Byte 1 Byte 1 Byte 2 Bytes 4 Bytes 5 Bytes 5 Bytes 3 Bytes 5 Bytes 2 Bytes 2 Byte 4 Bytes + 256B 4 Bytes Block Erase Chip Erase 4 Bytes 1 Byte 80 MHz 80 MHz Page Program Data Bytes Into Memory with Quad interface B1h Program 65 bytes of Security area 4 Bytes + 256B 4 Bytes 80 MHz 4Bh Read 65 bytes of Security area 4 Bytes 33 MHz BLOCK_ER CHIP_ER Quad page program Program information Raw Read information Raw 80 MHz HOLD OPERATION HOLD# is used in conjunction with CE# to select the IS25LQ020A. When the devices are selected and a serial sequence is underway, HOLD# can be used to pause the serial communication with the master device without resetting the serial sequence. Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 To pause, HOLD# is brought low while the SCK signal is low. To resume serial communication, HOLD# is brought high while the SCK signal is low (SCK may still toggle during HOLD). Inputs to Sl will be ignored while SO is in the high impedance state. 9 IS25LQ020A DEVICE OPERATION (CONTINUED) RDID (READ PRODUCT IDENTIFICATION) / RDES (RELEASE FROM DEEP POWER DOWN) COMMAND The Read Product Identification (RDID) instruction is for reading out an 8-bit Electronic Signature whose values are shown in Table 12: Product Identification. The output of RDID is not the same as the newer JEDEC ID instruction. RDID is not recommended for new designs. For new designs please use the JEDEC ID instruction. The RDID/RDES instruction code is followed by three dummy bytes, each bit being latched-in on SI during the rising edge of SCK. Then the Device ID is shifted out on SO with the MSB first, each bit been shifted out during the falling edge of SCK. The RDID/RDES instruction is ended by CE# goes high. The Device ID outputs repeatedly if clock cycles continue on SCK while CE# is held low. To release the device from the RDID/RDES instruction, drive CE# high as shown in figure 3. Before the device can resume normal operations and other instructions are accepted, the time tRES1 must first pass. The CE# pin must remain high during the tRES1 time duration. If the RDID/RDES instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on the current cycle. Table 12. Product Identification Product Identification First (ID1) Manufacturer ID: Second (ID2) Device ID: ID1 IS25LQ020A 11h Data 9Dh 7Fh ID2 42h Figure 3. Read Product Identification Sequence CE# 0 1 7 8 9 38 31 46 39 47 54 SCK INSTRUCTION SI SO 3 Dummy Bytes 1010 1011b HIGH IMPEDANCE Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 Device ID1 Device ID1 Device ID1 10 IS25LQ020A DEVICE OPERATION (CONTINUED) JEDEC ID READ COMMAND (READ PRODUCT IDENTIFICATION BY JEDEC ID) OPERATION The JEDEC ID READ instruction allows the user to read the manufacturer and product ID of devices. Refer to Table 12 Product Identification for ISSI Manufacturer ID and Device ID. After the JEDEC ID READ command is input, the second Manufacturer ID (7Fh) is shifted out on SO with the MSB first, followed by the first Manufacturer ID (9Dh) and the Device ID (42h, in the case of the IS25LQ020A), each bit shifted out during the falling edge of SCK. If CE# stays low after the last bit of the Device ID is shifted out, the Manufacturer ID and Device ID will loop until CE# is pulled high. Figure 4. Read Product Identification by JEDEC ID READ Sequence CE# 0 15 16 7 8 23 24 31 SCK INSTRUCTION SI SO 1001 1111b HIGH IMPEDANCE Manufacture ID2 Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 Manufacture ID1 Device ID2 11 IS25LQ020A DEVICE OPERATION (CONTINUED) RDMDID COMMAND (READ DEVICE MANUFACTURER AND DEVICE ID) OPERATION The RDMDID instruction allows the user to read the manufacturer and product ID of the devices. Refer to Table 12 Product Identification for ISSI™ manufacturer ID and device ID. The RDMDID instruction code is followed by two dummy bytes and one byte address (A7~A0), each bit being latched-in on SI during the rising edge of SCK. If one byte address is initially set to A0 = 0, then the first manufacturer ID (9Dh) is shifted out on SO with the MSB first, the device ID1 and the second manufacturer ID (7Fh), each bit shifted out during the falling edge of SCK. If one byte address is initially set to A0 = 1, then device ID1 will be read first, followed by the first manufacture ID (9Dh), and then second manufacture ID (7Fh). The manufacture and device ID1 can be read continuously, alternating from one to the others. The instruction is completed by driving CE# high. Figure 5. Read Product Identification by RDMDID READ Sequence CE# 0 1 2 3 4 5 6 9 8 7 10 11 SCK 28 29 30 31 1 A0 ... 3 - BYTE ADDRESS SIO INSTRUCTION = 1001 0000b 23 22 2 ... 3 21 HIGH IMPEDANCE SO CE# 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCK SIO Data Out1 SO 7 6 5 4 3 Data Out2 2 1 Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 0 7 6 5 4 3 2 1 0 12 IS25LQ020A CE# 47 48 49 50 51 52 53 54 55 4 3 2 1 0 56 SCK SIO Data Out3 SO 7 6 5 Note : (1) ADDRESS A0 = 0, will output Manufacture ID1 first -> Device ID1-> Manufacturing ID2 ex: 9Dh,11h,7Fh and repeat until device is de-selected (2) ADDRESS A0 = 1, will output Device ID1 first -> Manufacturing ID1-> Manufacturing ID2 ex: 11h,9Dh,7Fh and repeat until device is de-selected Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 13 IS25LQ020A DEVICE OPERATION (CONTINUED) WRITE ENABLE OPERATION The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit of the IS25Q020A is reset to the write –protected state after power-up. The WEL bit must be write enabled before any write operation, including sector, block erase, chip erase, page program, and write status register. The WEL bit will be reset to the write-protect state automatically upon completion of a write operation. The WREN instruction is required before any above operation is executed. Figure 6. Write Enable Sequence WRDI COMMAND (WRITE DISABLE) OPERATION The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI instruction is not required after the execution of a write instruction, since the WEL bit is automatically reset. Figure 7. Write Disable Sequence Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 14 IS25LQ020A DEVICE OPERATION (CONTINUED) RDSR COMMAND (READ STATUS REGISTER) OPERATION The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a program, erase or write status register operation, all other instructions will be ignored except the RDSR instruction, which can be used to check the progress or completion of an operation by reading the WIP bit of Status Register. Figure 8. Read Status Register Sequence WRSR COMMAND (WRITE STATUS REGISTER) OPERATION The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and status register write protection features by writing “0”s or “1”s into the non-volatile BP2, BP1, BP0 and SRWD bits. Figure 9. Write Status Register Sequence Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 15 IS25LQ020A DEVICE OPERATION (CONTINUED) READ COMMAND (READ DATA) OPERATION The Read Data (READ) instruction is used to read memory data of a IS25LQ020A under normal mode running up to 33 MHz. The READ instruction code is transmitted via the Sl line, followed by three address bytes (A23 - A0) of the first memory location to be read. A total of 24 address bits are shifted in, but only AMS (most significant address) - A0 are decoded. The remaining bits (A23 – AMS) are ignored. The first byte addressed can be at any memory location. Upon completion, any data on the Sl will be ignored. Refer to Table 13 for the related Address Key. out on the SO line, MSB first. A single byte of data, or up to the whole memory array, can be read out in one READ instruction. The address is automatically incremented after each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH) after the data comes out. When the highest address of the devices is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read in one continuous READ instruction. If a Read Data instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects on the current cycle The first byte data (D7 - D0) addressed is then shifted Table 13. Address Key Address AN (AMS – A0) Don't Care Bits IS25LQ020A A17 - A0 A23 – A18 Figure 12. Read Data Sequence Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 16 IS25LQ020A DEVICE OPERATION (CONTINUED) FAST_READ COMMAND (FAST READ DATA) OPERATION The FAST_READ instruction is used to read memory data at up to a 80 MHz clock. The first byte addressed can be at any memory location. The address is automatically incremented after each byte of data is shifted out. When the highest The FAST_READ instruction code is followed by three address is reached, the address counter will roll over to address bytes (A23 - A0) and a dummy byte (8 clocks), the 000000h address, allowing the entire memory to be transmitted via the SI line, with each bit latched-in read with a single FAST_READ instruction. The during the rising edge of SCK. Then the first data byte FAST_READ instruction is terminated by driving CE# addressed is shifted out on the SO line, with each bit high (VIH). If a Fast Read Data instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) shifted out at a maximum frequency fCT, during the the instruction is ignored and will not have any effects on falling edge of SCK. the current cycle Figure 13. Fast Read Data Sequence SIO Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 17 IS25LQ020A DEVICE OPERATION (CONTINUED) FRDO COMMAND (FAST READ DUAL OUTPUT) OPERATION The FRDO instruction is used to read memory data on two output pins each at up to a 80 MHz clock. The first byte addressed can be at any memory location. The address is automatically incremented The FRDO instruction code is followed by three after each byte of data is shifted out. When the highest address bytes (A23 - A0) and a dummy byte (8 clocks), address is reached, the address counter will roll over to transmitted via the SI line, with each bit latched-in the 000000h address, allowing the entire memory to be during the rising edge of SCK. Then the first data byte read with a single FRDO instruction. FRDO instruction addressed is shifted out on the SO and SIO lines, with is terminated by driving CE# high (VIH). If a FRDO instruction is issued while an Erase, Program or Write each pair of bits shifted out at a maximum frequency cycle is in process (BUSY=1) the instruction is ignored fCT, during the falling edge of SCK. The first bit (MSb) is output on SO, while simultaneously the second bit is and will not have any effects on the current cycle output on SIO. Figure 14. Fast Read Dual-Output Sequence CE# 0 2 1 3 4 5 6 7 8 9 10 11 SCK 30 31 2 1 0 46 47 48 2 0 6 1 7 28 29 ... 3 - BYTE ADDRESS SI INSTRUCTION = 0011 1011b 23 22 21 42 43 ... 3 HIGH IMPEDANCE SO CE# 32 33 34 35 36 37 38 39 40 41 44 45 SCK IO switch from input to output IO0 HIGH IMPEDANCE 6 4 2 0 6 DATA OUT 1 IO1 HIGH IMPEDANCE 7 5 3 4 DATA OUT 2 1 7 5 3 8 dummy clocks Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 18 IS25LQ020A DEVICE OPERATION (CONTINUED) FRDIO COMMAND (FAST READ DUAL I/O) OPERATION The FRDIO instruction is similar to the FRDO instruction, but allows the address bits to be input two bits at a time. This may allow for code to be executed directly from the SPI in some applications. The first byte addressed can be at any memory location. The address is automatically incremented after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to The FRDIO instruction code is followed by three the 000000h address, allowing the entire memory to be address bytes (A23 - A0) and a mode byte, transmitted read with a single FRDIO instruction. FRDIO via the IO0 and IO1 lines, with each pair of bits instruction is terminated by driving CE# high (VIH). latched-in during the rising edge of SCK. The address MSb is input on IO1, the next bit on IO0, and continues The device expects the next operation will be another to shift in alternating on the two lines. The mode byte FRDIO. It remains in this mode until it receives a contains the value Ax, where x is a “don’t care” value. Mode Reset (FFh) command. In subsequent FRDIO Then the first data byte addressed is shifted out on the execution, the command code is not input, saving IO1 and IO0 lines, with each pair of bits shifted out at a timing cycles as described in Figure 16. If a FRDIO maximum frequency fCT, during the falling edge of SCK. instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored The MSb is output on IO1, while simultaneously the and will not have any effects on the current cycle second bit is output on IO0. Figure 15 illustrates the timing sequence. Figure 15. Fast Read Dual I/O Sequence (with command decode cycles) CE# 0 2 1 3 4 5 6 8 7 9 10 SCK 11 18 19 20 21 ... 3 - BYTE ADDRESS IO0 INSTRUCTION = 1011 1011b 21 19 ... 2 23 22 20 ... 3 1 22 IO1 MODE BITS 0 6 7 4 5 CE# 22 23 24 25 26 27 28 29 30 31 SCK IO switch from input to output IO0 6 4 2 0 6 DATA OUT 1 IO1 7 5 3 4 2 0 6 1 7 DATA OUT 2 1 7 Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 5 3 19 IS25LQ020A DEVICE OPERATION (CONTINUED) Figure 16. Fast Read Dual I/O Sequence (without command decode cycles) CE# 0 1 2 SCK 11 3 13 14 15 16 17 19 20 21 22 23 24 22 21 19 ... 2 IO switch from input to output MODE BITS 0 6 6 4 23 22 20 ... 3 1 7 5 4 2 0 6 DATA OUT 1 2 dummy clocks IO1 18 … 3 - BYTE ADDRESS IO0 12 7 5 3 4 2 0 DATA OUT 2 1 7 5 3 1 FRQO COMMAND (FAST READ QUAD OUTPUT) OPERATION The FRQO instruction is used to read memory data on four output pins each at up to a 80 MHz clock. simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. The FRQO instruction code is followed by three address bytes (A23 - A0) and a dummy byte (8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSb) is output on IO3, while The first byte addressed can be at any memory location. The address is automatically incremented after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRQO instruction. FRQO instruction is terminated by driving CE# high (VIH). If a FRQO Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects on the current cycle 20 IS25LQ020A DEVICE OPERATION (CONTINUED) Figure 17. Fast Read Quad-Output Sequence CE# r 0 1 2 3 4 5 6 9 8 7 10 11 SCK 28 29 30 31 1 0 ... 3 - BYTE ADDRESS SI INSTRUCTION = 0110 1011b 23 ... 3 22 21 2 HIGH IMPEDANCE SO CE# 32 33 34 35 36 37 38 40 39 41 43 42 44 45 46 47 SCK 8 dummy clocks IO0 HIGH IMPEDANCE IO1 HIGH IMPEDANCE IO switch from input to output DATA OUT 1 DATA OUT 2 HIGH IMPEDANCE IO3 Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 DATA OUT n 4 0 4 0 4 0 4 0 4 5 1 5 1 5 1 5 1 5 6 2 6 2 6 2 6 2 6 7 3 7 3 7 3 7 3 7 HIGH IMPEDANCE IO2 ... 21 IS25LQ020A DEVICE OPERATION (CONTINUED) FRQIO COMMAND (FAST READ QUAD I/O) OPERATION The FRQIO instruction is similar to the FRQO instruction, but allows the address bits to be input four bits at a time. This may allow for code to be executed directly from the SPI in some applications. third bit is output on IO1, etc. Figure 18 illustrates the timing sequence. The first byte addressed can be at any memory location. The address is automatically incremented The FRQIO instruction code is followed by three after each byte of data is shifted out. When the highest address bytes (A23 - A0) and a mode byte, transmitted address is reached, the address counter will roll over to via the IO3, IO2, IO0 and IO1 lines, with each group of the 000000h address, allowing the entire memory to be four bits latched-in during the rising edge of SCK. The read with a single FRQIO instruction. FRQIO address MSb is input on IO3, the next bit on IO2, the instruction is terminated by driving CE# high (VIH). next bit on IO1, the next bit on IO0, and continue to shift in alternating on the four. The mode byte contains The device expects the next operation will be another the value Ax, where x is a “don’t care” value. Then the FRQIO. It remains in this mode until it receives a first data byte addressed is shifted out on the IO3, IO2, Mode Reset (FFh) command. In subsequent FRDIO IO1 and IO0 lines, with each group of four bits shifted execution, the command code is not input, saving out at a maximum frequency fCT, during the falling edge cycles as described in Figure 19. If a FRQIO instruction is issued while an Erase, Program or Write cycle is in of SCK. The first bit (MSb) is output on IO3, while process (BUSY=1) the instruction is ignored and will not simultaneously the second bit is output on IO2, the have any effects on the current cycle Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 22 IS25LQ020A Figure 18. Fast Read Quad I/O Sequence (with command decode cycles) CE# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK 3 - BYTE ADDRESS IO0 INSTRUCTION = 1110 1011b 20 16 12 MODE BITS 8 4 0 4 IO1 21 17 13 9 5 1 5 IO2 22 18 14 10 6 2 6 IO3 23 19 15 11 7 3 7 CE# 16 17 18 19 20 21 22 23 24 25 26 27 SCK 4 dummy cycles DATA OUT 1 DATA OUT 2 DATA OUT 3 DATA OUT 4 IO0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 IO switch from input to output Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 23 IS25LQ020A DEVICE OPERATION (CONTINUED) Figure 19. Fast Read Quad I/O Sequence (without command decode cycles) CE# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK 3 - BYTE ADDRESS MODE BITS 4 Dummy Clock IO0 DATA OUT 1 DATA OUT 2 20 16 12 8 4 0 4 4 0 4 IO1 21 17 13 9 5 1 5 5 1 5 IO2 22 18 14 10 6 2 6 6 2 6 IO3 23 19 15 11 7 3 7 7 3 7 MR COMMAND (MODE RESET) OPERATION The Mode Reset command is used to conclude subsequent FRDIO and FRQIO operations. It resets the Mode bits to a value that is not Ax. It should be executed after an FRDIO or FRQIO operation, and is recommended also as the first Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 command after a system reset. The timing sequence is different depending whether the MR command is used after an FRDIO or FRQIO, as shown in Figure 20. 24 IS25LQ020A Figure 20, Mode Reset Command Mode Reset for Dual I/O Mode Reset for Quad I/O CE# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK SIO SO INSTRUCTION = 1111 1111b INSTRUCTION = 1111 1111b HIGH IMPEDANCE Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 25 IS25LQ020A DEVICE OPERATION (CONTINUED) PAGE_PROG COMMAND (PAGE PROGRAM) OPERATION The Page Program (PAGE_PROG) instruction allows up to 256 bytes data to be programmed into memory in a single operation. The destination of the memory to be programmed must be outside the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits. A PAGE_PROG instruction which attempts to program into a page that is write-protected will be ignored. Before the execution of PAGE_PROG instruction, the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. The PAGE_PROG instruction code, three address bytes and program data (1 to 256 bytes) are input via the Sl line. Program operation will start immediately after the CE# is brought high, otherwise the PAGE_PROG instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. During a program operation, all instructions will be ignored except the RDSR instruction. The progress or completion of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously latched data are discarded, and the last 256 bytes data are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A byte cannot be reprogrammed without first erasing the whole sector or block. Figure 21. Page Program Sequence Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 26 IS25LQ020A DEVICE OPERATION (CONTINUED) Quad Input Page Program operation The Quad Input Page Program instruction allows up to 256 bytes data to be programmed into memory in a single operation with four pins (IO0, IO1, IO2 and IO3). The destination of the memory to be programmed must be outside the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits. A Quad Input Page Program instruction which attempts to program into a page that is writeprotected will be ignored. Before the execution of Quad Input Page Program instruction, the QE bit in the status register must be set to “1” and the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. RDSR instruction. The progress or completion of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously latched data are discarded, and the last 256 bytes data are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. The Quad Input Page Program instruction code, three address bytes and program data (1 to 256 bytes) are input via the four pins (IO0, IO1, IO2 and IO3). Program operation will start immediately after the CE# is brought high, otherwise the Quad Input Page Program instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. During a program operation, all instructions will be ignored except the Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A byte cannot be reprogrammed without first erasing the whole sector or block. CE# 0 1 2 3 4 5 6 7 8 9 10 SCK 11 28 29 30 31 32 34 35 ... DATA IN 1 3 - BYTE ADDRESS IO0 33 DATA IN 2 4 0 4 0 5 1 5 1 IO2 6 2 6 2 IO3 7 3 7 3 INSTRUCTION = 0101 0010b IO1 Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 23 22 21 ... 3 2 1 0 27 IS25LQ020A DEVICE OPERATION (CONTINUED) ERASE OPERATION The memory array of the IS25LQ020A is organized into uniform 4 KByte sectors or 32 KByte uniform blocks (64KByte Blocks for the 2Mb). Before a byte can be reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to “1”). In order to erase the devices, there are three erase instructions available: Sector Erase (SECTOR_ER), Block Erase (BLOCK_ER) and Chip Erase (CHIP_ER). A sector erase operation allows any individual sector to be erased without affecting the data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the whole memory array of a device. A sector erase, block erase or chip erase operation can be executed prior to any programming operation. SECTOR_ER COMMAND (SECTOR ERASE) OPERATION operation can be determined by reading the WIP bit in the Status Register using a RDSR instruction. If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been completed. BLOCK_ER COMMAND (BLOCK ERASE) OPERATION A Block Erase (BLOCK_ER) instruction erases a single block of the IS25LQ020A. Before the execution of a BLOCK_ER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after the completion of a block erase operation. The BLOCK_ER instruction code and three address bytes are input via SI. Erase operation will start immediately after the CE# is pulled high, otherwise the BLOCK_ER instruction will not be executed. The internal control logic automatically handles the erase voltage and timing. Refer to Figure 23 for Block Erase Sequence. A SECTOR_ER instruction erases a 4 KByte sector. Before the execution of a SECTOR_ER instruction, the Write Enable Latch (WEL) must be set via a Write CHIP_ER COMMAND (CHIP ERASE) OPERATION Enable (WREN) instruction. The WEL bit is reset automatically after the completion of sector an erase A Chip Erase (CHIP_ER) instruction erases the entire operation. memory array of a IS25LQ020A. Before the execution of CHIP_ER instruction, the Write Enable Latch (WEL) A SECTOR_ER instruction is entered, after CE# is must be set via a Write Enable (WREN) instruction. pulled low to select the device and stays low during the The WEL is reset automatically after completion of a entire instruction sequence The SECTOR_ER chip erase operation. instruction code, and three address bytes are input via SI. Erase operation will start immediately after CE# is The CHIP_ER instruction code is input via the SI. pulled high. The internal control logic automatically Erase operation will start immediately after CE# is handles the erase voltage and timing. Refer to Figure pulled high, otherwise the CHIP_ER instruction will not 22 for Sector Erase Sequence. be executed. The internal control logic automatically handles the erase voltage and timing. Refer to Figure During an erase operation, all instruction will be 24 for Chip Erase Sequence. ignored except the Read Status Register (RDSR) instruction. The progress or completion of the erase Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 28 IS25LQ020A DEVICE OPERATION (CONTINUED) Figure 22. Sector Erase Sequence Figure 23. Block Erase Sequence Figure 24. Chip Erase Sequence Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 29 IS25LQ020A DEVICE OPERATION (CONTINUED) Program Security information Row instruction (PSIR) The PSIR instructions can read and programmed (Erase) using three dedicated instructions. The program information Raw instruction is used to program at most 65 bytes to the security memory area (by changing bits from ‘1’ to ‘0’, only). Before it can be accepted, a write enable (WREN) instruction must previously have been executed. After the write enable (WREN) instruction has been decoded, the device sets the write enable latch (WEL) bit. The program information Row instruction is entered by driving CE# pin Low, followed by the instruction code, three address bytes and at least one data byte on serial data input (SI). CE# pin must be driven High after the eighth bits of the last data byte has been latched in, otherwise the Program information Row instruction is not executed. If more than 64 bytes data are sent to a device, the address counter can not roll over. After CE# pin is driven High, the self-timed page program cycle (whose duration is tpotp) is initiated. While the program OTP cycle is in progress, the status register may be read to check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during the self-timed program cycle, and it is 0 when it is completed. At some unspecified time before the cycle is complete, the write enable latch (WEL) bit is reset. CE# 0 1 2 3 4 5 6 7 8 9 10 11 28 29 30 31 2 1 0 ... SCK SI INSTRUCTION = 1011 0001b 23 22 MSB ... 21 24-bit address CE# 32 33 34 35 36 37 38 39 40 41 42 43 ... SCK MSB SI 7 6 5 4 3 2 1 0 Data Byte 1 7 6 5 Data Byte 2 ... Data Byte n Note: 1  n  65 Figure 30. Program information Raw Sequence Note: 1. The SIR address is from 000000h to 00003Fh. 2. The SIR protection bit is in the address 000040h Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 30 IS25LQ020A DEVICE OPERATION (CONTINUED) To lock the OTP memory: Bit 0 of the OTP control byte, that is byte 64, is used to permanently lock the OTP memory array. When bit 0 of byte 65 = ’1’, the 64 bytes of the OTP memory array can be programmed. When bit 0 of byte 65 = ‘0’, the 64 bytes of the OTP memory array are read-only and cannot be programmed anymore. Once a bit of the OTP memory has been programmed to ‘0’, it can no longer be set to ‘1’. Therefore, as soon as bit 0 of byte 64 (control byte) is set to ‘0’, the 64 bytes of the OTP memory array become read-only in a permanent way. Any program OTP (POTP) instruction issued while an erase, program or write cycle is in progress is rejected without having any effect on the cycle that is in progress OTP control byte Byte1 Byte2 Byte64 Byte65 X X X X X Bit 1~bit 7 do not care Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 X X Bit 0 When bit 0 = 0 the 64 OTP bytes become read only 31 IS25LQ020A DEVICE OPERATION (CONTINUED) Read Security Information Row (RSIR) The RSIR instruction read the security information Row. There is no rollover mechanism with the read OTP (ROTP) instruction. This means that the read OTP (ROTP) instruction must be sent with a maximum of 65 bytes to read, since once the 65th byte has been read, the same (65th) byte keeps being read on the SO pin. Fig 33. Read Security information Row instruction CE# 0 2 1 3 4 5 6 8 7 9 10 11 28 29 30 31 2 1 0 32 33 7 6 34 35 36 37 38 39 4 3 2 1 ... SCK SI INSTRUCTION = 0100 1011b 23 22 MSB 21 ... 24-bit address SO 5 0 Data Out0 CE# 40 41 42 43 44 45 46 47 ... SCK SI MSB SO 7 6 5 4 3 2 1 0 Data outpur 1 Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 7 6 5 Data output 2 ... Data output N 32 IS25LQ020A ABSOLUTE MAXIMUM RATINGS (1) Temperature Under Bias Storage Temperature Standard Package Lead-free Package Input Voltage with Respect to Ground on All Pins (2) All Output Voltage with Respect to Ground VCC (2) Surface Mount Lead Soldering Temperature -65oC to +125oC -65oC to +125oC 240oC 3 Seconds 260oC 3 Seconds -0.5 V to VCC + 0.5 V -0.5 V to VCC + 0.5 V -0.5 V to +6.0 V Notes: 1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. The functional operation of the device conditions that exceed those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condition for extended periods may affect device reliability. 2. Maximum DC voltage on input or I/O pins is VCC + 0.5 V. During voltage transitions, input or I/O pins may overshoot VCC by + 2.0 V for a period of time not to exceed 20 ns. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may undershoot GND by -2.0 V for a period of time not to exceed 20 ns. DC AND AC OPERATING RANGE Part Number Operating Temperature Vcc Power Supply IS25LQ020A -40oC to +105oC 2.3 V - 3.6 V DC CHARACTERISTICS Applicable over recommended operating range from: TAC = -40°C to +105°C, VCC = 2.3 V to 3.6 V (unless otherwise noted). Symbol ICC1 ICC2 ISB1 ISB2 ILI ILO VIL VIH VOL VOH Parameter Vcc Active Read Current Vcc Program/Erase Current Vcc Standby Current CMOS Vcc Standby Current TTL Input Leakage Current Output Leakage Current Input Low Voltage Input HIgh Voltage Output Low Voltage Output High Voltage Condition VCC = 3.6V at 33 MHz, SO = Open VCC = 3.6V at 33 MHz, SO = Open VCC = 3.6V, CE# = VCC VCC = 3.6V, CE# = VIH to VCC VIN = 0V to VCC VIN = 0V to VCC, TAC = 0oC to 105oC Min -0.5 0.7VCC 2.3V < VCC < 3.6V Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 IOL = 2.1 mA IOH = -100 µA VCC - 0.2 Typ 10 5 Max 15 10 10 3 1 1 0.3Vcc VCC + 0.3 0.45 Units mA mA µA mA µA µA V V V V 33 IS25LQ020A AC CHARACTERISTICS Applicable over recommended operating range from TA = -40°C to +105°C, VCC = 2.3 V to 3.6 V CL = 1 TTL Gate and 30 pF (unless otherwise noted). Symbol fCT fC tRI tFI tCKH tCKL tCEH tCS tCH tDS tDH tHS tHD tV tOH tLZ tHZ tDIS tEC tPP tVCS tw Parameter Clock Frequency for fast read mode Clock Frequency for read mode Input Rise Time Input Fall Time SCK High Time SCK Low Time CE# High Time CE# Setup Time CE# Hold Time Data In Setup Time Data in Hold Time Hold Setup Time Hold Time Output Valid Output Hold Time Normal Mode Hold to Output Low Z Hold to Output High Z Output Disable Time Secter/Block/Chip Erase Time Page Program Time VCC Set-up Time Write Status Register time Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 Min 0 0 Typ Max 80 33 8 8 4 4 25 10 5 2 2 15 15 8 0 0.2 200 200 100 10 0.4 50 2 Units MHz MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms µs ms 34 IS25LQ020A AC CHARACTERISTICS (CONTINUED) SERIAL INPUT/OUTPUT TIMING (1) Note: 1. For SPI Mode 0 (0,0) Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 35 IS25LQ020A AC CHARACTERISTICS (CONTINUED) HOLD TIMING PIN CAPACITANCE (f = 1 MHz, T = 25°C ) CIN COUT Typ 4 8 Max 6 12 Units pF pF Conditions VIN = 0 V VOUT = 0 V Note: These parameters are characterized but not 100% tested. OUTPUT TEST LOAD INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL 30pF Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 36 IS25LQ020A POWER-UP AND POWER-DOWN At Power-up and Power-down, the device must not be selected (CE# must follow the voltage applied on Vcc) until Vcc reaches the correct value: - Vcc(min) at Power-up, and then for a further delay of tVCE - Vss at Power-down Usually a simple pull-up resistor on CE# can be used to insure safe and proper Power-up and Power-down. To avoid data corruption and inadvertent write operations during power up, a Power On Reset (POR) circuit is included. The logic inside the device is held reset while Vcc is less than the POR threshold value (Vwi) during power up, the device does not respond to any instruction until a time delay of tPUW has elapsed after the moment that Vcc rised above the VWI threshold. However, the correct operation of the device is not guaranteed if, by this time, Vcc is still below Vcc(min). No Write Status Register, Program or Erase instructions should be sent until the later of: - tPUW after Vcc passed the VWI threshold - tVCE after Vcc passed the Vcc(min) level At Power-up, the device is in the following state: - The device is in the Standby mode - The Write Enable Latch (WEL) bit is reset At Power-down, when Vcc drops from the operating voltage, to below the Vwi, all write operations are disabled and the device does not respond to any write instruction. Vcc Vcc(max) All Write Commands are Rejected Chip Selection Not Allowed Vcc(min) Reset State tVCE V (write inhibit) Read Access Allowed Device fully accessible tPUW Time Symbol tVCE *1 tPUW *1 Parameter Vcc(min) to CE# Low Power-Up time delay to Write instruction *1 VWI Write Inhibit Voltage Note : *1. These parameters are characterized only. Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 Min. Max. 10 1 2.0 2.4 Unit us 10 ms V 37 IS25LQ020A PROGRAM/ERASE PERFORMANCE Parameter Sector Erase Time Block Erase Time Chip Erase Time Page Programming Time Unit ms ms ms ms Typ Max 10 10 10 0.2 0.4 Remarks From writing erase command to erase completion From writing erase command to erase completion From writing erase command to erase completion From writing program command to program completion Note: These parameters are characterized and are not 100% tested. RELIABILITY CHARACTERISTICS Parameter Endurance Data Retention ESD - Human Body Model ESD - Machine Model Latch-Up Min 100,000 20 2,000 200 100 + ICC1 Typ Unit Cycles Years Volts Volts mA Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard A114 JEDEC Standard A115 JEDEC Standard 78 Note: These parameters are characterized and are not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 38 IS25LQ020A PACKAGE TYPE INFORMATION ` 8-Pin JEDEC 150mil Small Outline Integrated Circuit (SOIC) Package (measure in millimeters) Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 39 IS25LQ020A 8-Pin 150mil Very Small Outline Integrated Circuit (VVSOP) Package (measure in millimeters) Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 40 IS25LQ020A 8-pin TSSOP Package (measure in millimeters) Pin1 6.2 6.6 4.3 4.5 0.127 Detail A 2.9 3.1 1.00 1.05 1.05 1.20 Detail A 0.25 0.30 GAGE PLANE 0.05 0.15 0.25 0.65 0.5 0.7 00 80 Unit : millimeters Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 41 IS25LQ020A Appendix1: Safe Guard function Safe Guard function is a security function for customer to protect by sector (4Kbyte). Every sector has a one bit register to decide if it will be safe guard protected or not. (“0”means protect and “1” means not protect by safe guard.) IS25LQ020A (sector 0~sector 63) *safe guard function priority is higher than status register (BP0/1/2) Mapping table for safe guard register Sector0 Sector1 Sector2 Sector3 Sector4 Sector5 Sector6 Sector7 Sector8 Sector9 Sector10 Sector11 Sector12 Sector13 Sector14 Sector15 D6 1 1 1 1 1 1 1 0 1 1 1 1 1 1 1 0 D5 1 1 1 1 1 1 0 1 1 1 1 1 1 1 0 1 D4 1 1 1 1 1 0 1 1 1 1 1 1 1 0 1 1 D3 1 1 1 1 0 1 1 1 1 1 1 1 0 1 1 1 D2 1 1 1 0 1 1 1 1 1 1 1 0 1 1 1 1 D1 1 1 0 1 1 1 1 1 1 1 0 1 1 1 1 1 D0 1 0 1 1 1 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 1 0 1 1 1 1 1 1 1 …… …… …… …… …… …… …… …… …… …… Sector56 Sector57 Sector58 Sector59 Sector60 Sector61 Sector62 Sector63 Chip Erase disable* Address[9:0] D7 000h 000h 000h 000h 000h 000h 000h 000h 001h 001h 001h 001h 001h 001h 001h 001h 007h 007h 007h 007h 007h 007h 007h 007h 1 1 1 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 1 008h 0 0 0 0 0 0 0 0 Note:1. Please set the Chip Erase disable to "00" after finished the register setting. 2. Please set the address 009h to "00" after finished the register setting. Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 42 IS25LQ020A Read Safe Guard register The READ Safe Guard instruction code is transmitted via the SlO line, followed by three address bytes (A23 - A0) of the first register location to be read. The first byte data (D7 - D0) addressed is then shifted out on the SO line, MSb first. The address is automatically incremented after each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH) after the data comes out. CS 1 2 7 8 9 10 23 24 25 26 31 32 33 34 39 40 41 42 47 48 SCK SI 2Fh A23-A0 SO 1st byte 2nd byte D7-D0 D7-D0 Fig a. Timing waveform of Read Safe guard register Erase Safe Guard register If we want to erase the safe guard register to let the flash into unprotect status, it needs five continuous instructions. If any instruction is wrong, the erase command will be ignored. Erase wait time follow product erase timing spec. Fig b. shows the complete steps for Erase safe guard register. Program Safe Guard register If we want to erase the safe guard register to let the flash into unprotect status, it needs five continuous instructions. If any instruction is wrong, the program command will be ignored. The Program safe guard instruction allows up to 256 bytes data to be programmed into memory in a single operation. Program wait time follow product program timing spec. Fig c. shows the complete steps for program safe guard register. Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 43 IS25LQ020A Sector Protection Mode Erase CS 1 2 7 8 9 10 31 32 SCK SI 55h A23-A0 CS 1 2 7 8 9 10 31 32 SCK SI AAh A23-A0 CS 1 2 7 8 9 10 31 32 SCK SI 80h A23-A0 CS 1 2 7 8 9 10 31 32 SCK SI AAh A23-A0 CS 1 2 7 8 SCK SI 2Bh Fig b. Erase safe guard register Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 44 IS25LQ020A CS 1 2 7 8 9 10 31 32 SCK SI 55h A23-A0 CS 1 2 7 8 9 10 31 32 SCK SI AAh A23-A0 CS 1 2 7 8 9 10 31 32 SCK SI A0h A23-A0 CS 1 2 7 8 9 10 31 32 SCK SI 55h A23-A0 CS 1 2 7 8 9 10 31 32 33 34 39 40 41 42 47 48 SCK 1st byte SI 23h A23-A0 D7-D0 2nd byte D7-D0 Fig c. program safe guard register Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 45 IS25LQ020A Appendix2: Sector Unlock function Instruction Name Hex Code 26h 24h SECT_UNLOCK SECT_LOCK Operation Command Cycle 4 Bytes 1 Byte Sector unlock Sector lock Maximum Frequency 80 MHz 80 MHz SEC_UNLOCK COMMAND OPERATION The Sector unlock command allows the user to select a specific sector to allow program and erase operations. This instruction is effective when the blocks are designated as write-protected through the BP0, BP1 and BP2 bits in the status register. Only one sector can be enabled at any time. To enable a different sector, a previously enabled sector must be disabled by executing a Sector Lock command. The instruction code is followed by a 24-bit address specifying the target sector, but A0 through A11 are not decoded. The remaining sectors within the same block remain in read-only mode. Figure d. Sector Unlock Sequence Sector unlock CS 1 2 7 8 1 2 7 8 9 10 15 16 17 18 23 24 25 26 31 32 SCK SI 06h 26h A23-A16 A15-A8 A7-A0 In the sector unlock procedure, [A11:A0] needs equal to “0”, unlock procedure is completed, otherwise chip will regard it as illegal command. Note: 1.If the clock number will not match 8 clocks(command)+ 24 clocks (address), it will be ignored. 2.It must be executed write enable (06h) before sector unlock instructions. Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 46 IS25LQ020A SECT_LOCK COMMAND OPERATION The Sector Lock command reverses the function of the Sector Unlock command. The instruction code does not require an address to be specified, as only one sector can be enabled at a time. The remaining sectors within the same block remain in read-only mode. Figure e. Sector Lock Sequence Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 47 IS25LQ020A Part Number Operating Frequency (MHz) IS25LQ020A-JNLE 80 IS25LQ020A-JVLE 80 IS25LQ020A-JDLE 80 Integrated Silicon Solution, Inc.- www.issi.com Rev. A1 1/22/2014 Package Temperature Range 8-Pin 150mil SOIC 8-Pin 150mil VVSOP 8-Pin TSSOP -40oC to +105oC 48