IS25WP080D-JKLE

IS25LP080D IS25WP080D IS25WP040D IS25WP020D 8/4/2Mb SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE DATA SHEET IS25LP080D IS25WP080D/040D/020D 8/4/2Mb SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE FEATURES • Industry Standard Serial Interface - IS25LP080D: 8Mbit/1Mbyte - IS25WP080D: 8Mbit/1Mbyte - IS25WP040D: 4Mbit/512Kbyte - IS25WP020D: 2Mbit/256Kbyte - 256 bytes per Programmable Page - Supports standard SPI, Fast, Dual, Dual I/O, Quad, Quad I/O, SPI DTR, Dual I/O DTR, Quad I/O DTR, and QPI - Supports Serial Flash Discoverable Parameters (SFDP) • High Performance Serial Flash (SPI) - 50MHz Normal and 133Mhz Fast Read - 532 MHz equivalent QPI - DTR (Dual Transfer Rate) up to 66MHz - Selectable Dummy Cycles - Configurable Drive Strength - Supports SPI Modes 0 and 3 - More than 100,000 Erase/Program Cycles - More than 20-year Data Retention • Flexible & Efficient Memory Architecture - Chip Erase with Uniform: Sector/Block Erase (4/32/64 Kbyte) - Program 1 to 256 Bytes per Page - Program/Erase Suspend & Resume • Efficient Read and Program modes - Low Instruction Overhead Operations - Continuous Read 8/16/32/64-Byte Burst Wrap - Selectable Burst Length - QPI for Reduced Instruction Overhead - AutoBoot Operation Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 • Low Power with Wide Temp. Ranges - Single Voltage Supply IS25LP: 2.30V to 3.60V IS25WP: 1.65V to 1.95V - 10 mA Active Read Current - 8 µA Standby Current - 1 µA Deep Power Down - Temp Grades: Extended: -40°C to +105°C Auto Grade (A3): -40°C to +125°C • Advanced Security Protection - Software and Hardware Write Protection - Power Supply Lock Protect - 4x256-Byte Dedicated Security Area with OTP User-lockable Bits - 128 bit Unique ID for Each Device (Call Factory) • Industry Standard Pin-out & Packages(1) - B = 8-pin SOIC 208mil - N = 8-pin SOIC 150mil - V = 8-pin VVSOP 150mil - K = 8-contact WSON 6x5mm - U = 8-contact USON 2x3mm - T = 8-contact USON 4x3mm (Call Factory) - KGD (Call Factory) Notes: 1. Call Factory for other package options available 2 IS25LP080D IS25WP080D/040D/020D GENERAL DESCRIPTION The IS25LP080D and IS25WP080D/040D/020D Serial Flash memory offers a versatile storage solution with high flexibility and performance in a simplified pin count package. ISSI’s “Industry Standard Serial Interface” Flash is for systems that require limited space, a low pin count, and low power consumption. The device is accessed through a 4-wire SPI Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which can also be configured to serve as multi-I/O (see pin descriptions). The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4) which equates to 66Mbytes/s of data throughput. The IS25xP series of Flash adds support for DTR (Double Transfer Rate) commands that transfer addresses and read data on both edges of the clock. These transfer rates can outperform 16-bit Parallel Flash memories allowing for efficient memory access to support XIP (execute in place) operation. Initial state of the memory array is erased (all bits are set to 1) when shipped from the factory. QPI (Quad Peripheral Interface) supports 2-cycle instruction further reducing instruction times. Pages can be erased in groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sector and block architecture allows for a high degree of flexibility so that the device can be utilized for a broad variety of applications requiring solid data retention. GLOSSARY Standard SPI In this operation, a 4-wire SPI Interface is utilized, consisting of Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. Instructions are sent via the SI pin to encode instructions, addresses, or input data to the device on the rising edge of SCK. The SO pin is used to read data or to check the status of the device. This device supports SPI bus operation modes (0, 0) and (1, 1). Multi I/O SPI Multi-I/O operation utilizes an enhanced SPI protocol to allow the device to function with Dual Output, Dual Input and Output, Quad Output, and Quad Input and Output capability. Executing these instructions through SPI mode will achieve double or quadruple the transfer bandwidth for READ and PROGRAM operations. QPI The device supports Quad Peripheral Interface (QPI) operations only when the device is switched from Standard/Dual/Quad SPI mode to QPI mode using the enter QPI (35h) instruction. The typical SPI protocol requires that the byte-long instruction code being shifted into the device only via SI pin in eight serial clocks. The QPI mode utilizes all four I/O pins to input the instruction code thus requiring only two serial clocks. This can significantly reduce the SPI instruction overhead and improve system performance. Only QPI mode or SPI/Dual/Quad mode can be active at any given time. Enter QPI (35h) and Exit QPI (F5h) instructions are used to switch between these two modes, regardless of the non-volatile Quad Enable (QE) bit status in the Status Register. Power Reset or Software Reset will return the device into the standard SPI mode. SI and SO pins become bidirectional I/O0 and I/O1, and WP# and HOLD# pins become I/O2 and I/O3 respectively during QPI mode. DTR In addition to SPI and QPI features, the device also supports SPI DTR READ. SPI DTR allows high data throughput while running at lower clock frequencies. SPI DTR READ mode uses both rising and falling edges of the clock to drive output, resulting in reducing input and output cycles by half. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 3 IS25LP080D IS25WP080D/040D/020D TABLE OF CONTENTS FEATURES ............................................................................................................................................................ 2 GENERAL DESCRIPTION .................................................................................................................................... 3 TABLE OF CONTENTS ......................................................................................................................................... 4 1. PIN CONFIGURATION ................................................................................................................................... 7 2. PIN DESCRIPTIONS ...................................................................................................................................... 8 3. BLOCK DIAGRAM .......................................................................................................................................... 9 4. SPI MODES DESCRIPTION ........................................................................................................................ 10 5. SYSTEM CONFIGURATION ........................................................................................................................ 12 5.1 BLOCK/SECTOR ADDRESSES ............................................................................................................ 12 5.2 Serial Flash Discoverable Parameters ................................................................................................... 13 6. REGISTERS ................................................................................................................................................. 18 6.1 STATUS REGISTER .............................................................................................................................. 18 6.2 FUNCTION REGISTER .......................................................................................................................... 21 6.3 READ REGISTER AND EXTENDED REGISTER.................................................................................. 22 6.4 AUTOBOOT REGISTER ........................................................................................................................ 26 7. PROTECTION MODE................................................................................................................................... 27 7.1 HARDWARE WRITE PROTECTION...................................................................................................... 27 7.2 SOFTWARE WRITE PROTECTION ...................................................................................................... 27 8. DEVICE OPERATION .................................................................................................................................. 28 8.1 NORMAL READ OPERATION (NORD, 03h) ......................................................................................... 31 8.2 FAST READ OPERATION (FRD, 0Bh) .................................................................................................. 33 8.3 HOLD OPERATION ................................................................................................................................ 35 8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh) ............................................................................. 35 8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh) ..................................................................... 38 8.6 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh).................................................................... 39 8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh) ............................................................................ 41 8.8 PAGE PROGRAM OPERATION (PP, 02h) ............................................................................................ 45 8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h) .......................................................... 47 8.10 ERASE OPERATION ........................................................................................................................... 48 8.11 SECTOR ERASE OPERATION (SER, D7h/20h) ................................................................................. 49 8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h) .............................................................. 50 8.13 CHIP ERASE OPERATION (CER, C7h/60h) ....................................................................................... 52 8.14 WRITE ENABLE OPERATION (WREN, 06h) ...................................................................................... 53 8.15 WRITE DISABLE OPERATION (WRDI, 04h) ....................................................................................... 54 8.16 READ STATUS REGISTER OPERATION (RDSR, 05h) ..................................................................... 55 8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h) ................................................................... 56 8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h) ................................................................. 57 8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)............................................................... 58 8.20 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QPIEN, 35h; QPIDI, F5h) .. 59 Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 4 IS25LP080D IS25WP080D/040D/020D 8.21 PROGRAM/ERASE SUSPEND & RESUME........................................................................................ 60 8.22 ENTER DEEP POWER DOWN (DP, B9h) ........................................................................................... 62 8.23 RELEASE DEEP POWER DOWN (RDPD, ABh) ................................................................................. 63 8.24 SET READ PARAMETERS OPERATION (SRPNV: 65h, SRPV: C0h/63h) ........................................ 64 8.25 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h) ...................... 66 8.26 READ READ PARAMETERS OPERATION (RDRP, 61h) ................................................................... 67 8.27 READ EXTENDED READ PARAMETERS OPERATION (RDERP, 81h) ............................................ 68 8.28 CLEAR EXTENDED READ PARAMETERS OPERATION (CLERP, 82h) .......................................... 69 8.29 READ PRODUCT IDENTIFICATION (RDID, ABh) .............................................................................. 70 8.30 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh) .. 72 8.31 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h) .......................... 73 8.31 READ UNIQUE ID NUMBER (RDUID, 4Bh) ........................................................................................ 74 8.32 READ SFDP OPERATION (RDSFDP, 5Ah) ........................................................................................ 75 8.33 NO OPERATION (NOP, 00h) ............................................................................................................... 75 8.34 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE RESET .......................................................................................................................................................... 76 8.35 SECURITY INFORMATION ROW........................................................................................................ 77 8.36 INFORMATION ROW ERASE OPERATION (IRER, 64h) ................................................................... 78 8.37 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) ............................................................... 79 8.38 INFORMATION ROW READ OPERATION (IRRD, 68h) ..................................................................... 80 8.39 FAST READ DTR MODE OPERATION In SPI MODE (FRDTR, 0Dh) ................................................ 81 8.40 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh) .................................................... 83 8.41 FAST READ QUAD IO DTR MODE OPERATION IN SPI MODE (FRQDTR, EDh) ............................ 86 8.42 SECTOR LOCK/UNLOCK FUNCTIONS .............................................................................................. 90 8.43 AUTOBOOT .......................................................................................................................................... 92 9. ELECTRICAL CHARACTERISTICS............................................................................................................. 96 9.1 ABSOLUTE MAXIMUM RATINGS (1) ..................................................................................................... 96 9.2 OPERATING RANGE ............................................................................................................................. 96 9.3 DC CHARACTERISTICS ........................................................................................................................ 97 9.4 AC MEASUREMENT CONDITIONS ...................................................................................................... 98 9.5 PIN CAPACITANCE ............................................................................................................................... 98 9.6 AC CHARACTERISTICS ........................................................................................................................ 99 9.7 SERIAL INPUT/OUTPUT TIMING ........................................................................................................ 101 9.8 POWER-UP AND POWER-DOWN ...................................................................................................... 104 9.9 PROGRAM/ERASE PERFORMANCE ................................................................................................. 105 9.10 RELIABILITY CHARACTERISTICS ................................................................................................... 105 10. PACKAGE TYPE INFORMATION ......................................................................................................... 106 10.1 8-Pin JEDEC 208mil Broad Small Outline Integrated Circuit (SOIC) Package (B) ............................ 106 10.2 8-Pin JEDEC 150mil Broad Small Outline Integrated Circuit (SOIC) Package (N) ............................ 107 10.3 8-Pin 150mil VVSOP Package (V)...................................................................................................... 108 10.4 8-Contact Ultra-Thin Small Outline No-Lead (USON) Package 2x3mm (U) ...................................... 109 Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 5 IS25LP080D IS25WP080D/040D/020D 10.5 8-Contact Ultra-Thin Small Outline No-Lead (USON) Package 4x3mm (T)....................................... 110 10.6 8-Contact Ultra-Thin Small Outline No-Lead (WSON) Package 6x5mm (K) ..................................... 111 11. ORDERING INFORMATION - Valid Part Numbers............................................................................... 112 Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 6 IS25LP080D IS25WP080D/040D/020D 1. PIN CONFIGURATION CE# SO (IO1) 1 2 8 Vcc 7 HOLD# or (1) RESET# (IO3) WP# (IO2) 3 6 SCK GND 4 5 SI (IO0) 8-pin SOIC 208mil (Package: B) 8-pin SOIC 150mil (Package: N) 8-pin VVSOP 150mil (Package: V) Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 CE# 1 8 Vcc SO (IO1) 2 7 RESET# (IO3)(1) WP# (IO2) 3 6 SCK GND 4 5 SI (IO0) HOLD# or 8-pin USON 2x3mm (Package: U) 8-pin USON 4x3mm (Package: T) 8-pin WSON 6x5mm (Package: K) 7 IS25LP080D IS25WP080D/040D/020D 2. PIN DESCRIPTIONS SYMBOL TYPE DESCRIPTION Chip Enable: The Chip Enable (CE#) pin enables and disables the devices operation. When CE# is high the device is deselected and output pins are in a high impedance state. When deselected the devices non-critical internal circuitry power down to allow minimal levels of power consumption while in a standby state. CE# INPUT When CE# is pulled low the device will be selected and brought out of standby mode. The device is considered active and instructions can be written to, data read, and written to the device. After power-up, CE# must transition from high to low before a new instruction will be accepted. Keeping CE# in a high state deselects the device and switches it into its low power state. Data will not be accepted when CE# is high. SI (IO0), SO (IO1) INPUT/OUTPUT Serial Data Input, Serial Output, and IOs (SI, SO, IO0, and IO1): This device supports standard SPI, Dual SPI, and Quad SPI operation. Standard SPI instructions use the unidirectional SI (Serial Input) pin to write instructions, addresses, or data to the device on the rising edge of the Serial Clock (SCK). Standard SPI also uses the unidirectional SO (Serial Output) to read data or status from the device on the falling edge of the serial clock (SCK). In Dual and Quad SPI mode, SI and SO become bidirectional IO pins to write instructions, addresses or data to the device on the rising edge of the Serial Clock (SCK) and read data or status from the device on the falling edge of SCK. Quad SPI instructions use the WP# and HOLD# pins as IO2 and IO3 respectively. WP# (IO2) INPUT/OUTPUT Write Protect/Serial Data IO (IO2): The WP# pin protects the Status Register from being written in conjunction with the SRWD bit. When the SRWD is set to “1” and the WP# is pulled low, the Status Register bits (SRWD, QE, BP3, BP2, BP1, BP0) are write-protected and vice-versa for WP# high. When the SRWD is set to “0”, the Status Register is not write-protected regardless of WP# state. When the QE bit is set to “1”, the WP# pin (Write Protect) function is not available since this pin is used for IO2. HOLD# or RESET#/Serial Data IO (IO3): When the QE bit of Status Register is set to “1”, HOLD# pin or RESET# is not available since it becomes IO3. When QE=0, the pin acts as HOLD# or RESET# and either one can be selected by the P7 bit setting in Read Register. HOLD# will be selected if P7=0 (Default) and RESET# will be selected if P7=1. HOLD# or RESET# (IO3) INPUT/OUTPUT The HOLD# pin allows the device to be paused while it is selected. It pauses serial communication by the master device without resetting the serial sequence. The HOLD# pin is active low. When HOLD# is in a low state and CE# is low, the SO pin will be at high impedance. Device operation can resume when HOLD# pin is brought to a high state. RESET# pin is a hardware RESET signal. When RESET# is driven HIGH, the memory is in the normal operating mode. When RESET# is driven LOW, the memory enters reset mode and output is High-Z. If RESET# is driven LOW while an internal WRITE, PROGRAM, or ERASE operation is in progress, data may be lost. SCK INPUT Vcc POWER GND GROUND NC Unused Serial Data Clock: Synchronized Clock for input and output timing operations. Power: Device Core Power Supply Ground: Connect to ground when referenced to Vcc NC: Pins labeled “NC” stand for “No Connect” and should be left unconnected. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 8 IS25LP080D IS25WP080D/040D/020D 3. BLOCK DIAGRAM Control Logic High Voltage Generator Status Register I/O Buffers and Data Latches 256 Bytes Page Buffer Serial Peripheral Interface CE# SCK WP# (IO2) SI (IO0) SO (IO1) Y-Decoder (1) X-Decoder HOLD# or RESET# (IO3) Memory Array Address Latch & Counter Note1: According to the P7 bit setting in Read Register, either HOLD# (P7=0) or RESET# (P7=1) pin can be selected. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 9 IS25LP080D IS25WP080D/040D/020D 4. SPI MODES DESCRIPTION Multiple IS25LP080D device or multiple IS25WP080D/040D/020D devices can be connected on the SPI serial bus and controlled by a SPI Master, i.e. microcontroller, as shown in Figure 4.1. The devices support either of two SPI modes: Mode 0 (0, 0) Mode 3 (1, 1) The difference between these two modes is the clock polarity. When the SPI master is in stand-by mode, the serial clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer to Figure 4.2 and Figure 4.3 for SPI and QPI mode. In both modes, the input data is latched on the rising edge of Serial Clock (SCK), and the output data is available from the falling edge of SCK. Figure 4.1 Connection Diagram among SPI Master and SPI Slaves (Memory Devices) SDO SPI interface with (0,0) or (1,1) SDI SCK SCK SO SI SCK SO SI SCK SO SI SPI Master (i.e. Microcontroller) CS3 CS2 SPI Memory Device CS1 SPI Memory Device CE# SPI Memory Device CE# WP# HOLD# or RESET (1) CE# WP# HOLD# or RESET# (1) WP# HOLD# or RESET# (1) Notes: 1. According to the P7 bit setting in Read Register, either HOLD# (P7=0) or RESET# (P7=1) pin can be selected. 2. SI and SO pins become bidirectional IO0 and IO1 respectively during Dual I/O mode and SI, SO, WP#, and HOLD# pins become bidirectional IO0, IO1, IO2, and IO3 respectively during Quad I/O or QPI mode. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 10 IS25LP080D IS25WP080D/040D/020D Figure 4.2 SPI Mode Support CPOL CPHA Shift in (Mode 0) 0 0 SCK (Mode 3) 1 1 SCK SI Shift out LSB IN MSB IN SO LSB OUT MSB OUT Figure 4.3 QPI Mode Support CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK Mode 0 3-byte Address Mode Bits Data 1 Data 2 Data 3 IO0 C4 C0 20 16 12 8 4 0 4 0 4 0 4 0 4 0 ... IO1 C5 C1 21 17 13 9 5 1 5 1 5 1 5 1 5 1 ... IO2 C6 C2 22 18 14 10 6 2 6 2 6 2 6 2 6 2 ... IO3 C71 C3 23 1 19 15 11 7 3 71 3 71 3 71 3 71 3 ... Note1: MSB (Most Significant Bit) Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 11 IS25LP080D IS25WP080D/040D/020D 5. SYSTEM CONFIGURATION The memory array is divided into uniform 4 Kbyte sectors or uniform 32/64 Kbyte blocks (a block consists of eight/sixteen adjacent sectors respectively). Table 5.1 illustrates the memory map of the device. The Status Register controls how the memory is protected. 5.1 BLOCK/SECTOR ADDRESSES Table 5.1 Block/Sector Addresses Memory Density Block No. (64Kbyte) Block No. (32Kbyte) Block 0 Block 0 Block 1 Block 2 Block 1 2Mb(1) Block 3 : : 4Mb(1) Block 6 Block 3 8Mb Block 7 : : Block 14 Block 7 Block 15 : : Block 30 Block 15 Block 31 Sector No. Sector Size (Kbytes) Address Range Sector 0 : : Sector 15 Sector 16 : : Sector 31 4 : : 4 4 : : 4 000000h – 000FFFh : : 00F000h - 00FFFFh 010000h – 010FFFh : : 01F000h - 01FFFFh : : : Sector 48 : : Sector 63 4 : : 4 030000h – 030FFFh : : 03F000h – 03FFFFh : : : Sector 112 : : Sector 127 4 : : 4 070000h – 070FFFh : : 07F000h – 07FFFFh : : : Sector 240 : : Sector 255 4 : : 4 0F0000h – 0F0FFFh : : 0FF000h – 0FFFFFh Note: 1. 4Mb/2Mb will be available only for 1.8V device. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 12 IS25LP080D IS25WP080D/040D/020D 5.2 SERIAL FLASH DISCOVERABLE PARAMETERS The Serial Flash Discoverable Parameters (SFDP) standard defines the structure of the SFDP database within the memory device. SFDP is the standard of JEDEC JESD216. The JEDEC-defined header with Parameter ID FF00h and related Basic Parameter Table is mandatory. Additional parameter headers and tables are optional. Table 5.2 Signature and Parameter Identification Data Values Description SFDP Signature SFDP Revision Number of Parameter Headers (NPH) Unused Parameter ID LSB Parameter Minor Revision Parameter Major Revision Parameter Table Length (in DWPRDs) Basic Flash Parameter Table Pointer (PTP) Parameter ID MSB Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Minor Major Address (Byte) 00h 01h 02h 03h 04h 05h 06h 07h 08h 09h 0Ah 0Bh 0Ch 0Dh 0Eh 0Fh Address (Bit) 7:0 15:8 23:16 31:24 7:0 15:8 23:16 31:24 7:0 15:8 23:16 31:24 7:0 15:8 23:16 31:24 13 Data 53h 46h 44h 50h 06h 01h 00h FFh 00h 06h 01h 10h 30h 00h 00h FFh IS25LP080D IS25WP080D/040D/020D Table 5.3 JEDEC Basic Flash Parameter Table Address (Byte) Description Minimum Sector Erase Sizes Write Granularity Volatile Status Register Block Protect bits Write Enable Instruction Select for writing to Volatile Status Register Unused 4KB Erase Instruction Supports (1-1-2) Fast Read Address Bytes Supports Double Transfer Rate (DTR) Clocking Supports (1-2-2) Fast Read Supports (1-4-4) Fast Read Supports (1-1-4) Fast Read Unused Reserved Flash memory Density (bits) Flash memory Density (bits) Flash memory Density (bits) 1-4-4 Fast Read Wait Cycle Count 1-4-4 Fast Read Mode bit Cycle Count 1-4-4 Fast Read Instruction 1-1-4 Fast Read Wait Cycle Count 1-1-4 Fast Read Mode bit Cycle Count 1-1-4 Fast Read Instruction 1-1-2 Fast Read Wait Cycle Count 1-1-2 Fast Read Mode bit Cycle Count 1-1-2 Fast Read Instruction 1-2-2 Fast Read Wait Cycle Count 1-2-2 Fast Read Mode bit Cycle Count 1-2-2 Fast Read Instruction Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 8Mb 4Mb 2Mb 30h Address (Bit) 1:0 2 3 Data 01b 1b 0b 4 0b 33h 7:5 15:8 16 18:17 19 20 21 22 23 31:24 111b 20h 1b 00b 1b 1b 1b 1b 1b FFh 34h 35h 36h 36h 36h 37h 7:0 15:8 23:16 23:16 23:16 31:24 FFh FFh 7Fh 3Fh 1Fh 00h 4:0 7:5 15:8 20:16 23:21 31:24 00100b 010b EBh 01000b 000b 6Bh 4:0 7:5 15:8 20:16 23:21 31:24 01000b 000b 3Bh 00000b 100b BBh 31h 32h 38h 39h 3Ah 3Bh 3Ch 3Dh 3Eh 3Fh 14 IS25LP080D IS25WP080D/040D/020D Table 5.3 JEDEC Basic Flash Parameter Table (Continued) Address (Bit) 0 3:1 4 7:5 31:8 0 111b 1 111b FFFFFFh 15:0 20:16 23:21 31:24 FFFFh 00000b 000b FFh 4Bh 15:0 20:16 23:21 31:24 FFFFh 00100b 010b EBh Erase Type 1 Size (4KB) Erase Type 1 Instruction Erase Type 2 Size (32KB) Erase Type 2 Instruction 4Ch 4Dh 4Eh 4Fh 7:0 15:8 23:16 31:24 0Ch 20h 0Fh 52h Erase Type 3 Size (64KB) Erase Type 3 Instruction Erase Type 4 Size (256KB) Erase Type 4 Instruction 50h 51h 52h 53h 7:0 15:8 23:16 31:24 10h D8h 00h FFh 57:54h 3:0 8:4 10:9 15:11 17:16 22:18 24:23 29:25 31:30 0011b 00100b 01b 00110b 01b 01001b 01b 00000b 00b Description Supports (2-2-2) Fast Read Reserved Supports (4-4-4) Fast Read Reserved Reserved Address (Byte) 40h 43:41h Reserved 2-2-2 Fast Read Wait Cycle Count 2-2-2 Fast Read Mode bit Cycle Count 2-2-2 Fast Read Instruction 45:44h Reserved 4-4-4 Fast Read Wait Cycle Count 4-4-4 Fast Read Mode bit Cycle Count 4-4-4 Fast Read Instruction 49:48h 46h 47h 4Ah Multiplier from typical erase time to maximum erase time Sector Type 1 ERASE time (typ) Sector Type 2 ERASE time (typ) Sector Type 3 ERASE time (typ) Sector Type 4 ERASE time (typ) Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 15 Data IS25LP080D IS25WP080D/040D/020D Table 5.3 JEDEC Basic Flash Parameter Table (Continued) Address (Byte) Address (Bit) Data 3:0 0010b 7:4 12:8 13 17:14 18 22:19 23 28:24 28:24 28:24 30:29 31 1000b 11000b 0b 0111b 0b 0000b 0b 00111b 00011b 00001b 01b 1b 3:0 7:4 8 12:9 17:13 1100b 1110b 1b 0110b 01100b 19:18 10b 23:20 0110b 5Fh 28:24 30:29 31 01100b 10b 0b Program Resume Instruction Program Suspend Instruction Resume Instruction Suspend Instruction 60h 61h 62h 63h 7:0 15:8 23:16 31:24 7Ah 75h 7Ah 75h Reserved Status Register Polling Device Busy 64h 1:0 7:2 11b 111101b Description Multiplier from typical time to maximum time for page or byte PROGRAM Page size 58h Page Program Typical time Byte Program Typical time, first byte 5Ah:59h Byte Program Typical time, additional byte Chip Erase, Typical time 8Mb 4Mb 2Mb 5Bh Units Reserved Prohibited Operations During Program Suspend Prohibited Operations During Erase Suspend Reserved Program Resume to Suspend Interval Suspend in-progress program max latency 5Ch 5Eh:5Dh Erase Resume to Suspend Interval Suspend in-progress erase max latency Suspend /Resume supported Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 16 IS25LP080D IS25WP080D/040D/020D Table 5.3 JEDEC Basic Flash Parameter Table (Continued) Address (Byte) Description Exit Deep Power-down to next operation delay 3V 1.8V Exit Deep Power-down to next operation delay Units Exit Deep Power-down Instruction Enter Deep Power-down Instruction Deep Power-down Supported 4-4-4 mode disable sequences (QPIDI) 4-4-4 mode enable sequences (QPIEN) 0-4-4 Mode Supported 0-4-4 Mode Exit Method 0-4-4 Mode Entry Method: Quad Enable Requirements (QER) Hold or RESET Disable Reserved Volatile or Non-Volatile Register and Write Enable (WREN) Instruction for Status Register 1 Reserved Soft Reset and Rescue Sequence Support Exit 4-Byte Addressing Enter 4-Byte Addressing Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Address (Bit) 14:13 22:15 30:23 31 00010b 00100b 01b ABh B9h 0b 3:0 8:4 9 15:10 19:16 22:20 23 31:24 1010b 00100b 1b 110000b 1100b 010b 0b FFh 6:0 1100001b 7 13:8 1b 110000b 110000000 0b 10000000b 12:8 67h:65h 69h:68h 6Ah 6Bh 6Ch 6Eh:6Dh 6Fh Data 23:14 31:24 17 IS25LP080D IS25WP080D/040D/020D 6. REGISTERS The device has various sets of Registers: Status, Function, Read, Extended Read and Autoboot. When the register is read continuously, the same data is output repeatedly until CE# goes HIGH. 6.1 STATUS REGISTER Status Register Format and Status Register Bit Definitions are described in Table 6.1 & Table 6.2. Table 6.1 Status Register Format Default Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 SRWD QE BP3 BP2 BP1 BP0 WEL WIP 0 0 0 0 0 0 0 0 Table 6.2 Status Register Bit Definition Bit Name Bit 0 WIP Bit 1 WEL Bit 2 BP0 Bit 3 BP1 Bit 4 BP2 Bit 5 BP3 Bit 6 QE Bit 7 SRWD Definition Write In Progress Bit: "0" indicates the device is ready(default) "1" indicates a write cycle is in progress and the device is busy Write Enable Latch: "0" indicates the device is not write enabled (default) "1" indicates the device is write enabled Block Protection Bit: (See Table 6.4 for details) "0" indicates the specific blocks are not write-protected (default) "1" indicates the specific blocks are write-protected Quad Enable bit: “0” indicates the Quad output function disable (default) “1” indicates the Quad output function enable Status Register Write Disable: (See Table 7.1 for details) "0" indicates the Status Register is not write-protected (default) "1" indicates the Status Register is write-protected Read/Write Type R Volatile R/W1 Volatile R/W Non-Volatile R/W Non-Volatile R/W Non-Volatile Note1: WEL bit can be written by WREN and WRDI commands, but cannot by WRSR command. The BP0, BP1, BP2, BP3, QE, and SRWD are non-volatile memory cells that can be written by a Write Status Register (WRSR) instruction. The default value of the BP0, BP1, BP2, BP3, QE, and SRWD bits were set to “0” at factory. The Status Register can be read by the Read Status Register (RDSR). The function of Status Register bits are described as follows: WIP bit: Write In Progress (WIP) is read-only, and can be used to detect the progress or completion of a Program, Erase, or Write/Set Non-Volatile/OTP Register operation. WIP is set to “1” (busy state) when the device is executing the operation. During this time the device will ignore further instructions except for Read Status/Function/Extended Read Register and Software/Hardware Reset instructions. In addition to the instructions, an Erase/Program Suspend instruction also can be executed during a Program or an Erase operation. When an operation has completed, WIP is cleared to “0” (ready state) whether the operation is successful or not and the device is ready for further instructions. WEL bit: Write Enable Latch (WEL) indicates the status of the internal write enable latch. When WEL is “0”, the internal write enable latch is disabled and the write operations described in Table 6.3 are inhibited. When WEL is “1”, the Write operations are allowed. WEL bit is set by a Write Enable (WREN) instruction. Each Write Non-Volatile Register, Program and Erase instruction must be preceded by a WREN instruction. The volatile register related commands such as the Set Volatile Read Register and the Set Volatile Extended Read Register don’t require to set WEL to “1". WEL can be reset by a Write Disable (WRDI) instruction. It will automatically reset after the completion of any Write operation. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 18 IS25LP080D IS25WP080D/040D/020D Table 6.3 Instructions requiring WREN instruction ahead Instructions must be preceded by the WREN instruction Name PP Hex Code Operation 02h Serial Input Page Program PPQ 32h/38h Quad Input Page Program SER D7h/20h Sector Erase 4KB BER32 (32KB) 52h Block Erase 32KB BER64 (64KB) D8h Block Erase 64KB CER C7h/60h Chip Erase WRSR 01h Write Status Register WRFR 42h Write Function Register SRPNV 65h Set Read Parameters (Non-Volatile) SERPNV 85h Set Extended Read Parameters (Non-Volatile) IRER 64h Erase Information Row IRP 62h Program Information Row WRABR 15h Write AutoBoot Register BP3, BP2, BP1, BP0 bits: The Block Protection (BP3, BP2, BP1 and BP0) bits are used to define the portion of the memory area to be protected. Refer to Table 6.4 for the Block Write Protection (BP) bit settings. When a defined combination of BP3, BP2, BP1 and BP0 bits are set, the corresponding memory area is protected. Any program or erase operation to that area will be inhibited. Note: A Chip Erase (CER) instruction will be ignored unless all the Block Protection Bits are “0”s. SRWD bit: The Status Register Write Disable (SRWD) bit operates in conjunction with the Write Protection (WP#) signal to provide a Hardware Protection Mode. When the SRWD is set to “0”, the Status Register is not writeprotected. When the SRWD is set to “1” and the WP# is pulled low (VIL), the bits of Status Register (SRWD, QE, BP3, BP2, BP1, BP0) become read-only, and a WRSR instruction will be ignored. If the SRWD is set to “1” and WP# is pulled high (VIH), the Status Register can be changed by a WRSR instruction. QE bit: The Quad Enable (QE) is a non-volatile bit in the Status Register that allows quad operation. When the QE bit is set to “0”, the pin WP# and HOLD#/RESET# are enabled. When the QE bit is set to “1”, the IO2 and IO3 pins are enabled. WARNING: The QE bit must be set to 0 if WP# or HOLD#/RESET# pin is tied directly to the power supply. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 19 IS25LP080D IS25WP080D/040D/020D Table 6.4 Block (64Kbyte) assignment by Block Write Protect (BP) Bits Status Register Bits Protected Memory Area BP3 BP2 BP1 BP0 8 Mbit 4 Mbit(1) 2 Mbit(1) 0 0 0 0 None None None 0 0 0 1 1 block : 15 1 block : 7 1 block : 3 0 0 1 0 2 blocks : 14 - 15 2 blocks : 6 - 7 2 blocks : 2 - 3 0 0 1 1 4 blocks : 12 - 15 4 blocks : 4 - 7 0 1 0 0 8 blocks : 8 - 15 0 1 0 1 0 1 1 0 0 1 1 1 1 0 0 0 1 0 0 1 1 0 1 0 1 0 1 1 8 blocks : 0 - 7 1 1 0 0 4 blocks : 0 - 3 4 blocks : 0 - 3 1 1 0 1 2 blocks : 0 - 1 2 blocks : 0 - 1 2 blocks : 0 - 1 1 1 1 0 1 block : 0 1 block : 0 1 block : 0 1 1 1 1 None None None All Blocks All Blocks All Blocks Note: 1. 4Mb/2Mb will be available only for 1.8V device. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 20 IS25LP080D IS25WP080D/040D/020D 6.2 FUNCTION REGISTER Function Register Format and Bit definition are described in Table 6.5 and Table 6.6. Table 6.5 Function Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 IRL3 IRL2 IRL1 IRL0 ESUS PSUS Reserved Reserved 0 0 0 0 0 0 0 0 Default Table 6.6 Function Register Bit Definition Bit Name Definition Bit 0 Reserved Reserved Bit 1 Reserved Bit 2 PSUS Bit 3 ESUS Bit 4 IR Lock 0 Bit 5 IR Lock 1 Bit 6 IR Lock 2 Bit 7 IR Lock 3 Reserved Program suspend bit: “0” indicates program is not suspend “1” indicates program is suspend Erase suspend bit: "0" indicates Erase is not suspend "1" indicates Erase is suspend Lock the Information Row 0: “0” indicates the Information Row can be programmed “1” indicates the Information Row cannot be programmed Lock the Information Row 1: “0” indicates the Information Row can be programmed “1” indicates the Information Row cannot be programmed Lock the Information Row 2: “0” indicates the Information Row can be programmed “1” indicates the Information Row cannot be programmed Lock the Information Row 3: “0” indicates the Information Row can be programmed “1” indicates the Information Row cannot be programmed Read /Write R Reserved R Reserved R Volatile R Volatile R/W OTP R/W OTP R/W OTP R/W OTP Type Note: Once OTP bits of Function Register are written to “1”, it cannot be modified to “0” any more. PSUS bit: The Program Suspend Status bit indicates when a Program operation has been suspended. The PSUS changes to “1” after a suspend command is issued during the program operation. Once the suspended Program resumes, the PSUS bit is reset to “0”. ESUS bit: The Erase Suspend Status bit indicates when an Erase operation has been suspended. The ESUS bit is “1” after a suspend command is issued during an Erase operation. Once the suspended Erase resumes, the ESUS bit is reset to “0”. IR Lock bit 0 ~ 3: The default is “0” so that the Information Row can be programmed. If the bit set to “1”, the Information Row can’t be programmed. Once it set to “1”, it cannot be changed back to “0” since IR Lock bits are OTP. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 21 IS25LP080D IS25WP080D/040D/020D 6.3 READ REGISTER AND EXTENDED REGISTER Read Register format and Bit definitions are described below. Read Register and Extended Read Register consist of a pair of rewritable non-volatile register and volatile register, respectively. During power up sequence, volatile register will be loaded with the value of non-volatile value. 6.3.1 READ REGISTER Table 6.7 and Table 6.8 define all bits that control features in SPI/QPI modes. HOLD#/RESET# pin selection (P7) bit is used to select HOLD# pin or RESET# pin in SPI mode when QE=“0”. When QE=1 or in QPI mode, P7 bit setting will be ignored since the pin becomes IO3.. The Dummy Cycle bits (P6, P5, P4, P3) define how many dummy cycles are used during various READ modes. The wrap selection bits (P2, P1, P0) define burst length with an enable bit. The SET READ PARAMETERS Operations (SRPNV: 65h, SRPV: C0h or 63h) are used to set all the Read Register bits, and can thereby define HOLD#/RESET# pin selection, dummy cycles, and burst length with wrap around. SRPNV is used to set the non-volatile register and SRPV is used to set the volatile register. Table 6.7 Read Register Parameter Bit Table Default P7 HOLD#/ RESET# 0 P6 Dummy Cycles 0 P5 Dummy Cycles 0 P4 Dummy Cycles 0 P3 Dummy Cycles 0 P2 Wrap Enable 0 P1 Burst Length 0 P0 Burst Length 0 Table 6.8 Read Register Bit Definition Read/Write Bit Name Definition P0 Burst Length Burst Length R/W P1 Burst Length Burst Length R/W P2 Burst Length Set Enable Burst Length Set Enable Bit: "0" indicates disable (default) "1" indicates enable R/W P3 Dummy Cycles P4 Dummy Cycles P5 Dummy Cycles P6 Dummy Cycles P7 HOLD#/ RESET# Type Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile R/W Number of Dummy Cycles: Bits1 to Bit4 can be toggled to select the number of dummy cycles (1 to 15 cycles) R/W R/W R/W HOLD#/RESET# pin selection Bit: "0" indicates the HOLD# pin is selected (default) "1" indicates the RESET# pin is selected Non-Volatile and Volatile R/W Table 6.9 Burst Length Data P1 P0 8 bytes 0 0 16 bytes 0 1 32 bytes 1 0 64 bytes 1 1 Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 22 IS25LP080D IS25WP080D/040D/020D Table 6.10 Wrap Function Wrap around boundary P2 Whole array regardless of P1 and P0 value 0 Burst Length set by P1 and P0 1 Table 6.11 Read Dummy Cycles vs Max Frequency P[6:3] Dummy Cycles2,3 Fast Read5 Fast Read5 0Bh 0Bh Fast Read Dual Output 3Bh Fast Read Dual IO BBh Fast Read Quad Output 6Bh Fast Read Quad IO EBh FRDTR 0Dh FRDDTR BDh FRQDTR EDh SPI QPI SPI SPI SPI SPI, QPI SPI/QPI SPI4 SPI, QPI 0 Default1 133MHz 104MHz 133MHz 115MHz 133MHz 104MHz 66/66MHz 66MHz 66MHz 1 1 84MHz 33MHz 84MHz 60MHz 66MHz 33MHz 50/20MHz 33MHz 20MHz 2 2 104MHz 50MHz 104MHz 84MHz 80MHz 50MHz 66/33MHz 50MHz 33MHz 3 3 133MHz 60MHz 115MHz 104MHz 90MHz 60MHz 66/46MHz 66MHz 46MHz 4 4 133MHz 70MHz 133MHz 115MHz 104MHz 70MHz 66/60MHz 66MHz 60MHz 5 5 133MHz 84MHz 133MHz 133MHz 115MHz 84MHz 66/66MHz 66MHz 66MHz 6 6 133MHz 104MHz 133MHz 133MHz 133MHz 104MHz 66/66MHz 66MHz 66MHz 7 7 133MHz 115MHz 133MHz 133MHz 133MHz 115MHz 66/66MHz 66MHz 66MHz 8 8 133MHz 133MHz 133MHz 133MHz 133MHz 133MHz 66/66MHz 66MHz 66MHz 9 9 133MHz 133MHz 133MHz 133MHz 133MHz 133MHz 66/66MHz 66MHz 66MHz 10 10 133MHz 133MHz 133MHz 133MHz 133MHz 133MHz 66/66MHz 66MHz 66MHz 11 11 133MHz 133MHz 133MHz 133MHz 133MHz 133MHz 66/66MHz 66MHz 66MHz 12 12 133MHz 133MHz 133MHz 133MHz 133MHz 133MHz 66/66MHz 66MHz 66MHz 13 13 133MHz 133MHz 133MHz 133MHz 133MHz 133MHz 66/66MHz 66MHz 66MHz 14 14 133MHz 133MHz 133MHz 133MHz 133MHz 133MHz 66/66MHz 66MHz 66MHz 15 15 133MHz 133MHz 133MHz 133MHz 133MHz 133MHz 66/66MHz 66MHz 66MHz Notes: 1. Default dummy cycles are as follows. Operation Command Dummy Cycles Normal mode DTR mode Normal mode DTR mode Fast Read (SPI mode) 0Bh 0Dh 8 8 Fast Read (QPI mode) 0Bh 0Dh 6 6 Fast Read Dual Output 3Bh - 8 - Fast Read Dual IO SPI BBh BDh 4 4 Fast Read Quad Output 6Bh - 8 - Fast Read Quad IO (SPI mode) EBh EDh 6 6 Fast Read Quad IO (QPI mode) EBh EDh 6 6 Comment RDUID, IRRD instructions are also applied. 2. Enough number of dummy cycles must be applied to execute properly the AX read operation. 3. Must satisfy bus I/O contention. For instance, if the number of dummy cycles and AX bit cycles are same, then X must be Hi-Z. 4. QPI mode is not available for FRDDTR command. 5. RDUID, IRRD instructions are also applied. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 23 IS25LP080D IS25WP080D/040D/020D 6.3.2 EXTENDED READ REGISTER Table 6.12 and Table 6.13 define all bits that control features in SPI/QPI modes. The ODS2, ODS1, ODS0 (EB7, EB6, EB5) bits provide a method to set and control driver strength. The four bits (EB3, EB2, EB1, EB0) are readonly bits and may be checked to know what the WIP status is or whether there is an error during an Erase, Program, or Write/Set Register operation. These bits are not affected by SERPNV or SERPV commands. EB4 bit remains reserved for future use. The SET EXTENDED READ PARAMETERS Operations (SERPNV: 85h, SERPV: 83h) are used to set all the Extended Read Register bits, and can thereby define the output driver strength used during READ modes. SRPNV is used to set the non-volatile register and SRPV is used to set the volatile register. Table 6.12 Extended Read Register Bit Table EB7 EB6 EB5 EB4 EB3 EB2 EB1 EB0 ODS2 ODS1 ODS0 Reserved E_ERR P_ERR PROT_E WIP 1 1 1 1 0 0 0 0 Read/Write Type R Volatile R Volatile R Volatile R Volatile R Reserved Non-Volatile and Volatile Non-Volatile and Volatile Non-Volatile and Volatile Default Table 6.13 Extended Read Register Bit Definition Bit Name EB0 WIP EB1 PROT_E EB2 P_ERR EB3 E_ERR EB4 Reserved EB5 ODS0 EB6 ODS1 EB7 ODS2 Definition Write In Progress Bit: Has exactly same function as the bit0 (WIP) of Status Register “0”: Ready, “1”: Busy Protection Error Bit: "0" indicates no error "1" indicates protection error in an Erase or a Program operation Program Error Bit: "0" indicates no error "1" indicates an Program operation failure or protection error Erase Error Bit: "0" indicates no error "1" indicates a Erase operation failure or protection error Reserved R/W Output Driver Strength: Output Drive Strength can be selected according to Table 6.14 R/W R/W Table 6.14 Driver Strength Table ODS2 ODS1 ODS0 Description 0 0 0 Reserved 0 0 1 12.50% 0 1 0 25% 0 1 1 37.50% 1 0 0 Reserved 1 0 1 75% 1 1 0 100% 1 1 1 50% Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Remark Default 24 IS25LP080D IS25WP080D/040D/020D WIP bit: The definition of the WIP bit is exactly same as the one of Status Register. PROT_E bit: The Protection Error bit indicates whether an Erase or Program operation has attempted to modify a protected array sector or block, or to access a locked Information Row region. When the bit is set to “1” it indicates that there was an error or errors in previous Erase or Program operations. See Table 6.15 for details. P_ERR bit: The Program Error bit indicates whether a Program operation has succeeded or failed, or whether a Program operation has attempted to program a protected array sector/block or a locked Information Row region. When the bit is set to “1” it indicates that there was an error or errors in previous Program or Write/Set Non-Volatile Register operations. See Table 6.15 for details. E_ERR bit: The Erase Error bit indicates whether an Erase operation has succeeded or failed, or whether an Erase operation has attempted to erase a protected array sector/block or a locked Information Row region. When the bit is set to “1” it indicates that there was an error or errors in previous Erase or Write/Set Non-Volatile Register operations. See Table 6.15 for details. Table 6.15 Instructions to set PROT_E, P_ERR, or E_ERR bit Instructions PP/PPQ IRP WRSR/WRABR/SRPNV/ SERPNV WRFR SER/BER32K/BER64K/CER/ IRER Description The commands will set the P_ERR if there is a failure in the operation. Attempting to program within the protected array sector/block or within an erase suspended sector/block will result in a programming error with P_ERR and PROT_E set to “1”. The command will set the P_ERR if there is a failure in the operation. In attempting to program within a locked Information Row region, the operation will fail with P_ERR and PROT_E set to 1. The update process for the non-volatile register bits involves an erase and a program operation on the non-volatile register bits. If either the erase or program portion of the update fails, the related error bit (P_ERR or E_ERR) will be set to “1”. Only for WRSR command, when Status Register is write-protected by SRWD bit and WP# pin, attempting to write the register will set PROT_E and E_ERR to “1”. The commands will set the P_ERR if there is a failure in the operation. The commands will set the E_ERR if there is a failure in the operation. E_ERR and PROT_E will be set to “1” when the user attempts to erase a protected main memory sector/block or a locked Information Row region. Chip Erase (CER) command will set E_ERR and PROT_E if any Block Protection bits (BP3~BP0) are not 0. . Notes: 1. OTP bits in the Function Register may only be programmed to “1”. Writing of the bits back to “0” is ignored and no error is set. 2. Read only bits in registers are never modified by a command so that the corresponding bits in the Write/Set Register command data byte are ignored without setting any error indication. 3. Once the PROT_E, P_ERR, and E_ERR error bits are set to “1”, they remains set to “1” until they are cleared to “0” with a Clear Extended Read Register (CLERP) command. This means that those error bits must be cleared through the CLERP command. Alternatively, Hardware Reset, or Software Reset may be used to clear the bits. 4. Any further command will be executed even though the error bits are set to “1”. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 25 IS25LP080D IS25WP080D/040D/020D 6.4 AUTOBOOT REGISTER AutoBoot Register Bit (32 bits) Definitions are described in Table 6.15. Table 6.16 AutoBoot Register Parameter Bit Table Bits Symbols Function Type Default Value AB[31:24] ABSA Reserved Reserved 00h AB[23:5] ABSA AutoBoot Start Address NonVolatile 00000h AB[4:1] ABSD AutoBoot Start Delay NonVolatile 0h AB0 ABE AutoBoot Enable NonVolatile 0 Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Description Reserved for future use 32 byte boundary address for the start of boot code access Number of initial delay cycles between CE# going low and the first bit of boot code being transferred, and it is the same as dummy cycles of FRD (QE=0) or FRQIO (QE=1). Example: The number of initial delay cycles is 8 (QE=0) or 6 (QE=1) when AB[4:1]=0h (Default setting). 1 = AutoBoot is enabled 0 = AutoBoot is not enabled 26 IS25LP080D IS25WP080D/040D/020D 7. PROTECTION MODE The device supports hardware and software write-protection mechanisms. 7.1 HARDWARE WRITE PROTECTION The Write Protection (WP#) pin provides a hardware write protection method for BP3, BP2, BP1, BP0, SRWD, and QE in the Status Register. Refer to the section 6.1 STATUS REGISTER. Write inhibit voltage (VWI) is specified in the section 9.8 POWER-UP AND POWER-DOWN. All write sequence will be ignored when Vcc drops to VWI. Table 7.1 Hardware Write Protection on Status Register SRWD WP# Status Register 0 Low Writable 1 Low Protected 0 High Writable 1 High Writable Note: Before the execution of any program, erase or write Status Register instruction, the Write Enable Latch (WEL) bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not enabled, the program, erase or write register instruction will be ignored. 7.2 SOFTWARE WRITE PROTECTION The device also provides a software write protection feature. The Block Protection (BP3, BP2, BP1, BP0) bits allow part or the whole memory area to be write-protected. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 27 IS25LP080D IS25WP080D/040D/020D 8. DEVICE OPERATION The device utilizes an 8-bit instruction register. Refer to Table 8.1. Instruction Set for details on instructions and instruction codes. All instructions, addresses, and data are shifted in with the most significant bit (MSB) first on Serial Data Input (SI) or Serial Data IOs (IO0, IO1, IO2, IO3). The input data on SI or IOs is latched on the rising edge of Serial Clock (SCK) for normal mode and both of rising and falling edges for DTR mode after Chip Enable (CE#) is driven low (VIL). Every instruction sequence starts with a one-byte instruction code and is followed by address bytes, data bytes, or both address bytes and data bytes, depending on the type of instruction. CE# must be driven high (VIH) after the last bit of the instruction sequence has been shifted in to end the operation. Table 8.1 Instruction Set Instruction Name Operation Mode Byte0 Byte1 Byte2 Byte3 Byte4 NORD Normal Read Mode SPI 03h A A A Data out FRD Fast Read Mode SPI QPI 0Bh A A A Dummy(1) Byte Data out A Dual A Dual AXh(1),(2) Dual Dual Data out Byte5 FRDIO Fast Read Dual I/O SPI BBh A Dual FRDO Fast Read Dual Output SPI 3Bh A A A Dummy(1) Byte Dual Data out FRQIO Fast Read Quad I/O SPI QPI EBh A Quad A Quad A Quad AXh(1), (2) Quad Quad Data out FRQO Fast Read Quad Output SPI 6Bh A A A Dummy(1) Byte Quad Data out FRDTR Fast Read DTR Mode SPI QPI 0Dh A A A Dummy(1) Byte Dual Data out FRDDTR Fast Read Dual I/O DTR SPI BDh A Dual A Dual A Dual AXh(1), (2) Dual Dual Data out FRQDTR Fast Read Quad I/O DTR SPI QPI EDh A A A AXh(1), (2) Quad Quad Data out PP Input Page Program SPI QPI 02h A A A PD (256byte) PPQ Quad Input Page Program SPI 32h 38h A A A Quad PD (256byte) SER Sector Erase SPI QPI D7h 20h A A A BER32 (32KB) Block Erase 32Kbyte SPI QPI 52h A A A BER64 (64KB) Block Erase 64Kbyte SPI QPI D8h A A A CER Chip Erase SPI QPI C7h 60h WREN Write Enable SPI QPI 06h WRDI Write Disable SPI QPI 04h RDSR Read Status Register SPI QPI 05h SR WRSR Write Status Register SPI QPI 01h WSR Data Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Byte6 28 IS25LP080D IS25WP080D/040D/020D Instruction Name Operation Mode Byte0 Byte1 RDFR Read Function Register SPI QPI 48h Data out WRFR Write Function Register SPI QPI 42h WFR Data QPIEN Enter QPI mode SPI 35h QPIDI Exit QPI mode QPI F5h PERSUS Suspend during program/erase SPI QPI 75h B0h PERRSM Resume program/erase SPI QPI 7Ah 30h DP Deep Power Down SPI QPI B9h SPI QPI ABh XXh(3) SPI QPI 65h Data in SPI QPI C0h 63h Data in SPI QPI 85h Data in SPI QPI 83h Data in SPI QPI 61h Data out SPI QPI 81h Data out RDID, RDPD SRPNV SRPV SERPNV SERPV RDRP RDERP Read ID / Release Power Down Set Read Parameters (Non-Volatile) Set Read Parameters (Volatile) Set Extended Read Parameters (Non-Volatile) Set Extended Read Parameters (Volatile) Read Read Parameters (Volatile) Read Extended Read Parameters (Volatile) Byte2 Byte3 Byte4 XXh(3) XXh(3) ID7-ID0 ID7-ID0 CLERP Clear Extended Read Register SPI QPI 82h RDJDID Read JEDEC ID Command SPI QPI 9Fh MF7-MF0 ID15-ID8 RDMDID Read Manufacturer & Device ID SPI QPI 90h XXh(3) XXh(3) RDJDIDQ Read JEDEC ID QPI mode QPI AFh MF7-MF0 ID15-ID8 ID7-ID0 RDUID Read Unique ID SPI QPI 4Bh A(4) A(4) RDSFDP SFDP Read SPI QPI 5Ah A A NOP No Operation SPI QPI 00h RSTEN Software Reset Enable SPI QPI 66h RST Software Reset SPI QPI 99h Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Byte5 00h MF7-MF0 ID7-ID0 01h ID7-ID0 MF7-MF0 A(4) Dummy Byte Data out A Dummy Byte Data out Byte6 29 IS25LP080D IS25WP080D/040D/020D Instruction Name IRER IRP IRRD Operation Erase Information Row Program Information Row Read Information Row Mode Byte0 Byte1 Byte2 Byte3 SPI QPI 64h A A A SPI QPI 62h A A A PD (256byte) SPI QPI 68h A A A Dummy Byte A A A Data in 1 Data in 2 Data in 3 SECUNLOCK Sector Unlock SPI QPI 26h SECLOCK Sector Lock SPI QPI 24h RDABR Read AutoBoot Register SPI QPI 14h WRABR Write AutoBoot Register SPI QPI 15h Byte4 Byte5 Byte6 Data out Data in 4 Notes: 1. The number of dummy cycles depends on the value setting in the Table 6.11 Read Dummy Cycles. 2. AXh has to be counted as a part of dummy cycles. X means “don’t care”. 3. XX means “don’t care”. 4. A are “don’t care” and A are always “0”. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 30 IS25LP080D IS25WP080D/040D/020D 8.1 NORMAL READ OPERATION (NORD, 03h) The NORMAL READ (NORD) instruction is used to read memory contents at a maximum frequency of 50MHz. The NORD instruction code is transmitted via the SI line, followed by three address bytes (A23 - A0) of the first memory location to be read. A total of 24 address bits are shifted in, but only AVMSB (Valid Most Significant Bit) - A0 are decoded. The remaining bits (A23 – AVMSB+1) are ignored. The first byte addressed can be at any memory location. Upon completion, any data on the SI will be ignored. Refer to Table 8.2 for the related Address Key. The first byte data (D7 - D0) is shifted out on the SO line, MSB first. A single byte of data, or up to the whole memory array, can be read out in one NORMAL READ instruction. The address is automatically incremented by one after each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH) after the data comes out. When the highest address of the device is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read in one continuous READ instruction. If the NORMAL READ instruction is issued while an Erase, Program or Write operation is in process (WIP=1) the instruction is ignored and will not have any effects on the current operation. Table 8.2 Address Key Address 8Mb 4Mb 2Mb AVMSB–A0 A19-A0 (A23-A20=X) A18-A0 (A23-A19=X) A17-A0 (A23-A18=X) Note: X=Don’t Care Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 31 IS25LP080D IS25WP080D/040D/020D Figure 8.1 Normal Read Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 28 29 30 31 0 SCK Mode 0 3-byte Address SI Instruction = 03h 23 22 ... 21 3 2 1 45 46 47 High Impedance SO CE # 32 33 34 35 36 37 39 38 40 41 42 43 44 ... SCK SI Data Out 1 SO tV 7 6 5 4 3 Data Out 2 2 Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 1 0 7 6 5 4 3 2 0 1 32 ... IS25LP080D IS25WP080D/040D/020D 8.2 FAST READ OPERATION (FRD, 0Bh) The FAST READ (FRD) instruction is used to read memory data at up to a 133MHz clock. The FAST READ instruction code is followed by three address bytes (A23 - A0) and dummy cycles (configurable, default is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte from the address is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK. The first byte addressed can be at any memory location. The address is automatically incremented by one after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FAST READ instruction. The FAST READ instruction is terminated by driving CE# high (VIH). If the FAST READ instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored without affecting the current cycle. Figure 8.2 Fast Read Sequence CE # Mode 3 0 1 2 3 4 5 6 8 7 9 10 ... 28 29 30 31 SCK Mode 0 3-byte Address SI Instruction = 0Bh 23 22 21 ... 3 2 1 0 41 42 43 44 45 46 47 ... High Impedance SO CE # 32 33 34 35 36 37 38 39 40 SCK SI Dummy Cycles Data Out tV SO 7 6 5 4 3 2 0 1 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 33 IS25LP080D IS25WP080D/040D/020D FAST READ OPERATION IN QPI MODE (FRD, 0Bh) The FAST READ (FRD) instruction is used also in QPI mode to read memory data at up to a 133MHz clock. The FAST READ instruction code (2 clocks) is followed by three address bytes (A23-A0 — 6 clocks) and dummy cycles (configurable, default is 6 cycles), transmitted via the IO3, IO2, IO1 and IO0 lines, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK. The first byte addressed can be at any memory location. The address is automatically incremented by one after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FAST READ instruction. The FAST READ instruction in QPI mode is terminated by driving CE# high (VIH). If the FAST READ instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored without affecting the current cycle. The Fast Read sequence in QPI mode is also applied to the commands in the following table 8.3. Table 8.3 Address Key Instruction Name FRQIO RDUID IRRD Operation Fast Read Quad I/O Read Unique ID Read Information Row Hex Code EBh 4Bh 68h Figure 8.3 Fast Read Sequence In QPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 8 9 ... 13 14 15 16 17 ... SCK Mode 0 tV IO[3:0] 0Bh Instruction 23:20 19:16 15:12 11:8 3-byte Address 7:4 3:0 7:4 6 Dummy Cycles 3:0 Data 1 7:4 3:0 ... Data 2 Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 34 IS25LP080D IS25WP080D/040D/020D 8.3 HOLD OPERATION HOLD# is used in conjunction with CE# to select the device. When the device is selected and a serial sequence is underway, HOLD# can be used to pause the serial communication with the master device without resetting the serial sequence. To pause, HOLD# is brought low while the SCK signal is low. To resume serial communication, HOLD# is brought high while the SCK signal is low (SCK may still toggle during HOLD). Inputs to SI will be ignored while SO is in the high impedance state, during HOLD. Note: HOLD is not supported in DTR mode or with QE=1 or when RESET# is selected for the HOLD# or RESET# pin. Timing graph can be referenced in AC Parameters Figure 9.4. 8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh) The FRDIO allows the address bits to be input two bits at a time. This may allow for code to be executed directly from the SPI in some applications. The FRDIO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable, default is 4 clocks), transmitted via the IO1 and IO0 lines, with each pair of bits latched-in during the rising edge of SCK. The address MSB is input on IO1, the next bit on IO0, and this shift pattern continues to alternate between the two lines. Depending on the usage of AX read operation mode, a mode byte may be located after address input. The first data byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The MSB is output on IO1, while simultaneously the second bit is output on IO0. Figure 8.4 illustrates the timing sequence. The first byte addressed can be at any memory location. The address is automatically incremented by one after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRDIO instruction. FRDIO instruction is terminated by driving CE# high (VIH). The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8 bits, such as M7 to M0. Four cycles after address input are reserved for Mode bits in FRDIO execution. M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables the AX read operation and subsequent FRDIO execution skips command code. It saves cycles as described in Figure 8.5. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 4 cycles, data output will start right after mode bit is applied. If the FRDIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not affect the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 35 IS25LP080D IS25WP080D/040D/020D Figure 8.4 Fast Read Dual I/O Sequence (with command decode cycles) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 18 19 20 21 SCK Mode 0 4 Dummy Cycles 3-byte Address IO0 Instruction = BBh 22 20 18 ... 2 0 6 4 23 21 19 ... 3 1 7 5 High Impedance IO1 Mode Bits CE # 22 23 24 25 26 27 29 28 30 31 32 33 34 35 36 37 ... SCK tV IO0 2 0 6 4 2 0 6 Data Out 1 IO1 3 1 7 5 3 4 2 0 6 Data Out 2 1 7 5 3 4 2 0 6 4 ... 1 7 5 ... Data Out 3 1 7 5 3 Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 36 IS25LP080D IS25WP080D/040D/020D Figure 8.5 Fast Read Dual I/O AX Read Sequence (without command decode cycles) CE # Mode 3 0 1 2 3 ... 11 12 13 14 15 16 17 18 19 20 ... 21 SCK Mode 0 4 Dummy Cycles 3-byte Address tV Data Out 2 Data Out 1 IO0 22 20 18 ... 2 0 6 4 2 0 6 4 2 0 6 4 ... IO1 23 21 19 ... 3 1 7 5 3 1 7 5 3 1 7 5 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 37 IS25LP080D IS25WP080D/040D/020D 8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh) The FRDO instruction is used to read memory data on two output pins each at up to a 133MHz clock. The FRDO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable, default is 8 clocks), transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO1. Simultaneously, the second bit is output on IO0. The first byte addressed can be at any memory location. The address is automatically incremented by one after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRDO instruction. The FRDO instruction is terminated by driving CE# high (VIH). If the FRDO instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects on the current cycle. Figure 8.6 Fast Read Dual Output Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 28 29 30 31 SCK Mode 0 3-byte Address IO0 Instruction = 3Bh 23 22 41 42 21 ... 3 2 1 0 44 45 46 47 ... High Impedance IO1 CE # 32 33 34 35 36 37 38 39 40 43 SCK tV IO0 6 2 0 6 Data Out 1 8 Dummy Cycles IO1 4 7 5 3 4 2 0 ... 1 ... Data Out 2 1 7 5 3 Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 38 IS25LP080D IS25WP080D/040D/020D 8.6 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh) The FRQO instruction is used to read memory data on four output pins each at up to a 133 MHz clock. The FRQO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable, default is 8 clocks), transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. The first byte addressed can be at any memory location. The address is automatically incremented after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRQO instruction. FRQO instruction is termin ated by driving CE# high (VIH). If a FRQO instruction is issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 39 IS25LP080D IS25WP080D/040D/020D Figure 8.7 Fast Read Quad Output Sequence CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 28 29 30 31 SCK Mode 0 3-byte Address IO0 Instruction = 6Bh 23 22 41 42 21 ... 3 2 1 0 44 45 46 47 ... High Impedance IO1 High Impedance IO2 High Impedance IO3 CE # 32 33 34 35 36 37 38 39 40 43 SCK tV IO0 4 8 Dummy Cycles 0 4 0 4 0 4 0 ... Data Out 1 Data Out 2 Data Out 3 Data Out 4 IO1 5 1 5 1 5 1 5 1 ... IO2 6 2 6 2 6 2 6 2 ... IO3 7 3 7 3 7 3 7 3 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 40 IS25LP080D IS25WP080D/040D/020D 8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh) The FRQIO instruction allows the address bits to be input four bits at a time. This may allow for code to be executed directly from the SPI in some applications. The FRQIO instruction code is followed by three address bytes (A23 – A0) and dummy cycles (configurable, default is 6 clocks), transmitted via the IO3, IO2, IO1 and IO0 lines, with each group of four bits latched-in during the rising edge of SCK. The address of MSB inputs on IO3, the next bit on IO2, the next bit on IO1, the next bit on IO0, and continue to shift in alternating on the four. Depending on the usage of AX read operation mode, a mode byte may be located after address input. The first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. Figure 8.8 illustrates the timing sequence. The first byte addressed can be at any memory location. The address is automatically incremented after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRQIO instruction. FRQIO instruction is terminated by driving CE# high (VIH). The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8 bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO execution. M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables the AX read operation and subsequent FRQIO execution skips command code. It saves cycles as described in Figure 8.9. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 6 cycles, data output will start right after mode bits and 4 additional dummy cycles are applied. If the FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not have any effects on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 41 IS25LP080D IS25WP080D/040D/020D Figure 8.8 Fast Read Quad I/O Sequence (with command decode cycles) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 SCK Mode 0 3-byte Address IO0 20 16 12 8 4 0 4 0 21 17 13 9 5 1 5 1 IO2 22 18 14 10 6 2 6 2 IO3 23 19 15 11 7 3 7 3 Instruction = EBh High Impedance IO1 Mode Bits CE # 16 17 18 19 20 21 23 22 24 25 26 27 28 29 30 31 ... SCK 6 Dummy Cycles tV Data Out 1 Data Out 2 Data Out 3 Data Out 4 Data Out 5 Data Out 6 IO0 4 0 4 0 4 0 4 0 4 0 4 0 ... IO1 5 1 5 1 5 1 5 1 5 1 5 1 ... 6 2 6 2 6 2 6 2 6 2 6 2 ... 7 3 7 3 7 3 7 3 7 3 7 3 ... IO2 IO3 Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 42 IS25LP080D IS25WP080D/040D/020D Figure 8.9 Fast Read Quad I/O AX Read Sequence (without command decode cycles) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ... SCK Mode 0 6 Dummy Cycles 3-byte Address tV Data Out 1 Data Out 2 IO0 20 16 12 8 4 0 4 0 4 0 4 0 ... IO1 21 17 13 9 5 1 5 1 5 1 5 1 ... IO2 22 18 14 10 6 2 6 2 6 2 6 2 ... IO3 23 19 15 11 7 3 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 43 IS25LP080D IS25WP080D/040D/020D FAST READ QUAD I/O OPERATION IN QPI MODE (FRQIO, EBh) The FRQIO instruction is also used in QPI mode to read memory data at up to a 133MHz clock. The FRQIO instruction in QPI mode utilizes all four IO lines to input the instruction code so that only two clocks are required, while the FRQIO instruction in SPI mode requires that the byte-long instruction code is shifted into the device only via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQIO instruction in QPI mode. In addition, subsequent address and data out are shifted in/out via all four IO lines like the FRQIO instruction. In fact, except for the command cycle, the FRQIO operation in QPI mode is exactly same as the FRQIO operation in SPI mode. The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8 bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO execution. M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah), it enables the AX read operation and subsequent FRQIO execution skips command code. It saves cycles as described in Figure 8.9. When the code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. SPI or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 6 cycles, data output will start right after mode bits and 4 additional dummy cycles are applied. If the FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not have any effects on the current cycle. Figure 8.10 Fast Read Quad I/O Sequence in QPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 8 9 ... 13 14 15 16 17 ... SCK Mode 0 Mode Bits IO[3:0] EBh Instruction 23:20 19:16 15:12 11:8 3-byte Address 7:4 3:0 7:4 3:0 6 Dummy Cycles tV 7:4 3:0 Data 1 7:4 3:0 ... Data 2 Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 44 IS25LP080D IS25WP080D/040D/020D 8.8 PAGE PROGRAM OPERATION (PP, 02h) The Page Program (PP) instruction allows up to 256 bytes data to be programmed into memory in a single operation. The destination of the memory to be programmed must be outside the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits. A PP instruction which attempts to program into a page that is write-protected will be ignored. Before the execution of PP instruction, the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. The PP instruction code, three address bytes and program data (1 to 256 bytes) are input via the Sl line. Program operation will start immediately after the CE# is brought high, otherwise the PP instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. The progress or completion of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously latched data are discarded, and the last 256 bytes are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. Note: A program operation can alter “1”s into “0”s. The same byte location or page may be programmed more than once, to incrementally change “1”s to “0”s. An erase operation is required to change “0”s to “1”s. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 45 IS25LP080D IS25WP080D/040D/020D Figure 8.11 Page Program Sequence in SPI Mode 1 ... 7 8 9 ... 31 32 33 ... 39 ... ... 2079 Mode 3 0 2072 CE # SCK Mode 0 SI 3-byte Address Instruction = 02h 23 22 ... Data In 1 Data In 256 0 7 6 ... 0 ... 7 ... 0 6 7 8 9 10 11 12 13 14 15 ... 7:4 3:0 7:4 3:0 7:4 3:0 7:4 3:0 7:4 3:0 ... High Impedance SO Figure 8.12 Page Program Sequence in QPI Mode CE# Mode 3 0 1 2 3 4 5 SCK Mode 0 IO[3:0] 02h 23:20 19:16 15:12 11:8 3-byte Address Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Data In 1 Data In 2 Data In 3 Data In 4 46 IS25LP080D IS25WP080D/040D/020D 8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h) The Quad Input Page Program instruction allows up to 256 bytes data to be programmed into memory in a single operation with four pins (IO0, IO1, IO2 and IO3). The destination of the memory to be programmed must be outside the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits. A Quad Input Page Program instruction which attempts to program into a page that is write-protected will be ignored. Before the execution of Quad Input Page Program instruction, the QE bit in the Status Register must be set to “1” and the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. The Quad Input Page Program instruction code, three address bytes and program data (1 to 256 bytes) are input via the four pins (IO0, IO1, IO2 and IO3). Program operation will start immediately after the CE# is brought high, otherwise the Quad Input Page Program instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. The progress or completion of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously latched data are discarded, and the last 256 bytes data are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. Note: A program operation can alter “1”s into “0”s. The same byte location or page may be programmed more than once, to incrementally change “1”s to “0”s. An erase operation is required to change “0”s to “1”s. Figure 8.13 Quad Input Page Program Sequence CE # Mode 3 0 1 2 3 4 5 6 7 8 9 ... 31 32 33 34 35 ... SCK Mode 0 3-byte Address Data In 1 Data In 2 4 0 4 0 ... 5 1 5 1 ... IO2 6 2 6 2 ... IO3 7 3 7 3 ... IO0 IO1 Instruction = 32h/38h High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 23 22 ... 0 47 IS25LP080D IS25WP080D/040D/020D 8.10 ERASE OPERATION The Erase command sets all bits in the addressed sector or block to “1”s. The memory array of the device is organized into uniform 4 Kbyte sectors or 32/64 Kbyte uniform blocks (a block consists of eight/sixteen adjacent sectors respectively). Before a byte is reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to “1”). In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase (BER) and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without affecting the data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the whole memory array of a device. A sector erase, block erase, or chip erase operation can be executed prior to any programming operation. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 48 IS25LP080D IS25WP080D/040D/020D 8.11 SECTOR ERASE OPERATION (SER, D7h/20h) A Sector Erase (SER) instruction erases a 4 Kbyte sector before the execution of a SER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically reset after the completion of Sector Erase operation. A SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire instruction sequence The SER instruction code, and three address bytes are input via SI. Erase operation will start immediately after CE# is pulled high. The internal control logic automatically handles the erase voltage and timing. The progress or completion of the erase operation can be determined by reading the WIP bit in the Status Register using a RDSR instruction. If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been completed. Figure 8.14 Sector Erase Sequence In QPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 1 0 SCK Mode 0 3-byte Address SI SO Instruction = D7h/20h 23 22 21 ... 4 5 6 7 7:4 3:0 3 2 High Impedance Figure 8.15 Sector Erase Sequence In QPI Mode CE# Mode 3 0 1 2 3 SCK Mode 0 IO[3:0] 3-byte Address D7h/20h Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 23:20 19:16 15:12 11:8 49 IS25LP080D IS25WP080D/040D/020D 8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h) A Block Erase (BER) instruction erases a 32/64Kbyte block. Before the execution of a BER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after the completion of a block erase operation. The BER instruction code and three address bytes are input via SI. Erase operation will start immediately after the CE# is pulled high, otherwise the BER instruction will not be executed. The internal control logic automatically handles the erase voltage and timing. Figure 8.16 Block Erase (64K) Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 2 1 0 SCK Mode 0 3-byte Address SI SO Instruction = D8h 23 22 21 ... 4 5 6 7 7:4 3:0 3 High Impedance Figure 8.17 Block Erase (64K) Sequence In QPI Mode CE# Mode 3 0 1 2 3 SCK Mode 0 IO[3:0] 3-byte Address D8h Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 23:20 19:16 15:12 11:8 50 IS25LP080D IS25WP080D/040D/020D Figure 8.18 Block Erase (32K) Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 2 1 0 SCK Mode 0 3-byte Address SI SO Instruction = 52h 23 22 21 ... 4 5 6 7 7:4 3:0 3 High Impedance Figure 8.19 Block Erase (32K) Sequence In QPI Mode CE# Mode 3 0 1 2 3 SCK Mode 0 IO[3:0] 3-byte Address 52h Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 23:20 19:16 15:12 11:8 51 IS25LP080D IS25WP080D/040D/020D 8.13 CHIP ERASE OPERATION (CER, C7h/60h) A Chip Erase (CER) instruction erases the entire memory array. Before the execution of CER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is automatically reset after completion of a chip erase operation. The CER instruction code is input via the SI. Erase operation will start immediately after CE# is pulled high, otherwise the CER instruction will not be executed. The internal control logic automatically handles the erase voltage and timing. Chip Erase (CER) instruction can be executed only when Block Protection (BP3~BP0) bits are set to 0s. If the BP bits are not 0, the CER command is not executed and E_ERR and PROT_E are set. Figure 8.20 Chip Erase Sequence In SPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 SI Instruction = C7h/60h SO High Impedance Figure 8.21 Chip Erase Sequence In QPI Mode CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 C7h/60h 52 IS25LP080D IS25WP080D/040D/020D 8.14 WRITE ENABLE OPERATION (WREN, 06h) The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit is reset to the write-protected state after power-up. The WEL bit must be write enabled before any write operation, including Sector Erase, Block Erase, Chip Erase, Page Program, Program Information Row, Write Status Register, Write Function Register, Set non-volatile Read Register, Set non-volatile Extended Read Register, and Write Autoboot Register operations except for Set volatile Read Register and Set volatile Extended Read Register. The WEL bit will be reset to the write-protected state automatically upon completion of a write operation. The WREN instruction is required before any above operation is executed. Figure 8.22 Write Enable Sequence In SPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 06h SI High Impedance SO Figure 8.23 Write Enable Sequence In QPI Mode CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 06h 53 IS25LP080D IS25WP080D/040D/020D 8.15 WRITE DISABLE OPERATION (WRDI, 04h) The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI instruction is not required after the execution of a write instruction, since the WEL bit is automatically reset. Figure 8.24 Write Disable Sequence In SPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 04h SI High Impedance SO Figure 8.25 Write Disable Sequence In QPI Mode CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 04h 54 IS25LP080D IS25WP080D/040D/020D 8.16 READ STATUS REGISTER OPERATION (RDSR, 05h) The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a program, erase or write Status Register operation, RDSR instruction can be used to check the progress or completion of an operation by reading the WIP bit of Status Register. Figure 8.26 Read Status Register Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 05h tV SO Data Out 7 6 5 4 3 2 1 Figure 8.27 Read Status Register Sequence In QPI Mode CE# Mode 3 0 1 2 3 SCK Mode 0 tV IO[3:0] 05h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 55 0 IS25LP080D IS25WP080D/040D/020D 8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h) The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and Status Register write protection features by writing “0”s or “1”s into the non-volatile BP3, BP2, BP1, BP0, and SRWD bits. Also WRSR instruction allows the user to disable or enable quad operation by writing “0” or “1” into the non-volatile QE bit. Figure 8.28 Write Status Register Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 01h 7 6 2 3 7:4 3:0 5 4 3 High Impedence Figure 8.29 Write Status Register Sequence In QPI Mode CE# Mode 3 0 1 SCK Mode 0 IO[3:0] 01h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 56 IS25LP080D IS25WP080D/040D/020D 8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h) The Read Function Register (RDFR) instruction provides access to the Function Register. Refer to Table 6.6 Function Register Bit Definition for more detail. Figure 8.30 Read Function Register Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 48h tV SO Data Out 7 6 5 4 3 2 1 Figure 8.31 Read Function Register Sequence In QPI Mode CE# Mode 3 0 1 2 3 SCK Mode 0 tV IO[3:0] 48h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 57 0 IS25LP080D IS25WP080D/040D/020D 8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h) Information Row Lock bits (IRL3~IRL0) can be set to “1” individually by WRFR instruction in order to lock Information Row. Since IRL bits are OTP, once it is set to “1”, it cannot set back to “0” again. Figure 8.32 Write Function Register Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 42h 7 6 5 4 3 High Impedence Figure 8.33 Write Function Register QPI Sequence In QPI Mode CE# Mode 3 0 1 2 3 7:4 3:0 SCK Mode 0 IO[3:0] 42h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 58 IS25LP080D IS25WP080D/040D/020D 8.20 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QPIEN, 35h; QPIDI, F5h) The Enter Quad Peripheral Interface (QPIEN) instruction, 35h, enables the Flash device for QPI bus operation. Upon completion of the instruction, all instructions thereafter will be 4-bit multiplexed input/output until a power cycle or an Exit Quad Peripheral Interface instruction is sent to device. The Exit Quad Peripheral Interface (QPIDI) instruction, F5h, resets the device to 1-bit SPI protocol operation. To execute an Exit Quad Peripheral Interface operation, the host drives CE# low, sends the QPIDI instruction, then drives CE# high. The device just accepts QPI (2 clocks) command cycles. Figure 8.34 Enter Quad Peripheral Interface (QPI) Mode Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 35h SI High Impedance SO Figure 8.35 Exit Quad Peripheral Interface (QPI) Mode Sequence CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 F5h 59 IS25LP080D IS25WP080D/040D/020D 8.21 PROGRAM/ERASE SUSPEND & RESUME The device allows the interruption of Sector Erase, Block Erase, or Page Program operations to conduct other operations. 75h/B0h command for suspend and 7Ah/30h for resume will be used. (SPI/QPI all acceptable) Function Register bit2 (PSUS) and bit3 (ESUS) are used to check whether or not the device is in suspend mode. Suspend to read ready timing (tSUS): 100µs (TYP) Resume to another suspend timing (tRS): 80µs (TYP) SUSPEND DURING SECTOR-ERASE OR BLOCK-ERASE (PERSUS 75h/B0h) The Suspend command allows the interruption of Sector Erase and Block Erase operations. But Suspend command will be ignored during Chip Erase operation. After the Suspend command, other commands include array read operation can be accepted. But Write Status Register command (01h) and Erase instructions are not allowed during Erase Suspend. Also, array read for being erased sector/block is not allowed. To execute Erase Suspend operation, the host drives CE# low, sends the Suspend command cycle (75h/B0h), then drives CE# high. The Function Register indicates that the Erase has been suspended by setting the ESUS bit from “0” to “1”, but the device will not accept another command until it is ready. To determine when the device will accept a new command, poll the WIP bit or wait the specified time tSUS. When ESUS bit is set to “1”, the Write Enable Latch (WEL) bit clears to “0”. SUSPEND DURING PAGE PROGRAMMING (PERSUS 75h/B0h) The Suspend command also allows the interruption of all array Program operations. After the Suspend command, other commands include array read operation can be accepted can be accepted. But Write Status Register instruction (01h) and Program instructions are not allowed during Program Suspend. Also, array read for being programmed page is not allowed. To execute the Program Suspend operation, the host drives CE# low, sends the Suspend command cycle (75h/B0h), then drives CE# high. The Function Register indicates that the programming has been suspended by setting the PSUS bit from “0” to “1”, but the device will not accept another command until it is ready. To determine when the device will accept a new command, poll the WIP bit or wait the specified time tSUS. When PSUS bit is set to “1”, the Write Enable Latch (WEL) bit clears to “0”. PROGRAM/ERASE RESUME (PERRSM 7Ah/30h) The Program/Erase Resume restarts the Program or Erase command that was suspended, and clears the suspend status bit in the Function Register (ESUS or PSUS bits) to “0”. To execute the Program/Erase Resume operation, the host drives CE# low, sends the Program/Erase Resume command cycle (7Ah/30h), then drives CE# high. A cycle is two nibbles long, most significant nibble first. To issue another Erase Suspend operation after Erase Resume operation, Erase Resume to another Erase Suspend delay (tRS) is required, but it could require longer Erase time to complete Erase operation. To determine if the internal, self-timed Write operation completed, poll the WIP bit. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 60 IS25LP080D IS25WP080D/040D/020D Table 8.4 Instructions accepted during Suspend Instruction Allowed Operation Suspended Name Hex Code Program or Erase NORD 03h Read Data Bytes from Memory at Normal Read Mode Program or Erase FRD 0Bh Read Data Bytes from Memory at Fast Read Mode Program or Erase FRDIO BBh Fast Read Dual I/O Program or Erase FRDO 3Bh Fast Read Dual Output Program or Erase FRQIO EBh Fast Read Quad I/O Program or Erase FRQO 6Bh Fast Read Quad Output Program or Erase FRDTR 0Dh Fast Read DTR Mode Program or Erase FRDDTR BDh Fast Read Dual I/O DTR Program or Erase FRQDTR EDh Fast Read Quad I/O DTR Erase PP 02h Serial Input Page Program Erase PPQ 32h/38h Quad Input Page Program Erase WREN 06h Write Enable Program or Erase RDSR 05h Read Status Register Program or Erase RDFR 48h Read Function Register Program or Erase CLERP 82h Clear Extended Read Register Program or Erase PERRSM 7Ah/30h Resume program/erase Erase PERSUS 75h/B0h Program/Erase Suspend Program or Erase RDID ABh Program or Erase SRPV C0/63h Program or Erase SERPV 83h Set Extended Read Parameters (Volatile) Program or Erase RDRP 61h Read Read Parameters (Volatile) Program or Erase RDERP 81h Read Extended Read Parameters (Volatile) Program or Erase RDJDID 9Fh Read Manufacturer and Product ID by JEDEC ID Command Program or Erase RDMDID 90h Read Manufacturer and Device ID Program or Erase RDJDIDQ AFh Read JEDEC ID QPI mode Program or Erase RDUID 4Bh Read Unique ID Number Program or Erase RDSFDP 5Ah SFDP Read Program or Erase NOP 00h No Operation Program or Erase RSTEN 66h Software reset enable Program or Erase RST 99h Reset (Only along with 66h) Program or Erase IRRD 68h Read Information Row Erase SECUNLOCK 26h Sector Unlock Erase SECLOCK 24h Sector Lock Program or Erase RDABR 14h Read AutoBoot Register Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Operation Read Manufacturer and Product ID Set Read Parameters (Volatile) 61 IS25LP080D IS25WP080D/040D/020D 8.22 ENTER DEEP POWER DOWN (DP, B9h) The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (enter into Power-down mode). During this mode, standby current is reduced from Isb1 to Isb2. While in the Power-down mode, the device is not active and all Write/Program/Erase instructions are ignored. The instruction is initiated by driving the CE# pin low and shifting the instruction code into the device. The CE# pin must be driven high after the instruction has been latched, or Power-down mode will not engage. Once CE# pin driven high, the Power-down mode will be entered within the time duration of tDP. While in the Power-down mode only the Release from Powerdown/RDID instruction, which restores the device to normal operation, will be recognized. All other instructions are ignored, including the Read Status Register instruction which is always available during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition for securing maximum write protection. It is available in both SPI and QPI mode. Figure 8.36 Enter Deep Power Down Mode Sequence In SPI MOde tDP CE # Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 SI SO Instruction = B9h High Impedance Figure 8.37 Enter Deep Power Down Mode Sequence In QPI Mode tDP CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 B9h 62 IS25LP080D IS25WP080D/040D/020D 8.23 RELEASE DEEP POWER DOWN (RDPD, ABh) The Release Deep Power-down/Read Device ID instruction is a multi-purpose command. To release the device from the Power-down mode, the instruction is issued by driving the CE# pin low, shifting the instruction code “ABh” and driving CE# high. Releasing the device from Power-down mode will take the time duration of tRES1 before normal operation is restored and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration. If the Release Deep Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in progress (WIP=1) the instruction is ignored and will not have any effects on the current cycle. Figure 8.38 Release Deep Power Down Mode Sequence In SPI Mode tRES1 CE # Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 SI SO Instruction = ABh High Impedance Figure 8.39 Release Deep Power Down Mode Sequence In QPI Mode tRES1 CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 ABh 63 IS25LP080D IS25WP080D/040D/020D 8.24 SET READ PARAMETERS OPERATION (SRPNV: 65h, SRPV: C0h/63h) Set Read Parameter Bits This device supports configurable burst length and dummy cycles in both SPI and QPI mode by setting three bits (P2, P1, P0) and four bits (P6, P5, P4, P3) within the Read Register, respectively. To set those bits the SRPNV and SRPV operation instruction are used. Details regarding burst length and dummy cycles can be found in Table 6.9, Table 6.10, and Table 6.11. HOLD#/RESET# pin selection (P7) bit in the Read Register can be set with the SRPNV and SRPV operation as well, in order to select RESET# pin instead of HOLD# pin. SRPNV is used to set the non-volatile Read register, while SRPV is used to set the volatile Read register. Note: When SRPNV is executed, the volatile Read Register is set as well as the non-volatile Read Register. Figure 8.40 Set Read Parameters Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 65h or C0h/63h 7 6 2 3 7:4 3:0 5 4 3 High Impedence Figure 8.41 Set Read Parameters Sequence In QPI Mode CE# Mode 3 0 1 SCK Mode 0 IO[3:0] 65h or C0h/63h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 64 IS25LP080D IS25WP080D/040D/020D Read with “8/16/32/64-Byte Wrap Around” The device is capable of burst read with wrap around in both SPI and QPI mode. The size of burst length is configurable by using P0, P1, and P2 bits in Read Register. P2 bit (Wrap enable) enables the burst mode feature. P0 and P1 define the size of burst. Burst lengths of 8, 16, 32, and 64 bytes are supported. By default, address increases by one up through the entire array. By setting the burst length, the data being accessed can be limited to the length of burst boundary within a 256 byte page. The first output will be the data at the initial address which is specified in the instruction. Following data will come out from the next address within the burst boundary. Once the address reaches the end of boundary, it will automatically move to the first address of the boundary. CE# high will terminate the command. For example, if burst length of 8 and initial address being applied is 0h, following byte output will be from address 00h and continue to 01h,..,07h, 00h, 01h… until CE# terminates the operation. If burst length of 8 and initial address being applied is FEh(254d), following byte output will be from address FEh and continue to FFh, F8h, F9h, FAh, FBh, FCh, FDh, and repeat from FEh until CE# terminates the operation. The commands, “SRPV (65h) or SRPNV (C0h or 63h)”, are used to configure the burst length. If the following data input is one of “00h”,”01h”,”02h”, and ”03h”, the device will be in default operation mode. It will be continuous burst read of the whole array. If the following data input is one of “04h”,”05h”,”06h”, and ”07h”, the device will set the burst length as 8,16,32 and 64, respectively. To exit the burst mode, another “C0h or 63h” command is necessary to set P2 to 0. Otherwise, the burst mode will be retained until either power down or reset operation. To change burst length, another “C0h or 63h” command should be executed to set P0 and P1 (Detailed information in Table 6.9 Burst Length Data). All read commands will operate in burst mode once the Read Register is set to enable burst mode. Refer to Figure 8.40 and Figure 8.41 for instruction sequence. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 65 IS25LP080D IS25WP080D/040D/020D 8.25 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h) Set Read Operational Driver Strength This device supports configurable Operational Driver Strength in both SPI and QPI modes by setting three bits (ODS0, ODS1, ODS2) within the Extended Read Register. To set the ODS bits the SERPNV and SERPV operation instructions are required. The device’s driver strength can be reduced as low as 12.50% of full drive strength. Details regarding the driver strength can be found in Table 6.14. SERPNV is used to set the non-volatile Extended Read register, while SERPV is used to set the volatile Extended Read register. Notes: 1. The default driver strength is set to 50%. 2. When SERPNV is executed, the volatile Read Extended Register is set as well as the non-volatile Read Extended Register. Figure 8.42 Set Extended Read Parameters Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 Data In SI SO Instruction = 85h/83h 7 6 5 4 3 High Impedence Figure 8.43 Set Extended Read Parameters Sequence In QPI Mode CE# Mode 3 0 1 2 3 7:4 3:0 SCK Mode 0 IO[3:0] 85h/83h Data In Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 66 IS25LP080D IS25WP080D/040D/020D 8.26 READ READ PARAMETERS OPERATION (RDRP, 61h) Prior to, or after setting Read Register, the data of the Read Register can be confirmed by the RDRP command. The instruction is only applicable for the volatile Read Register, not for the non-volatile Read Register. Figure 8.44 Read Read Parameters Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 61h tV SO Data Out 7 6 5 4 3 2 1 Figure 8.45 Read Read Parameters Sequence In QPI Mode CE# Mode 3 0 1 2 3 SCK Mode 0 tV IO[3:0] 61h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 67 0 IS25LP080D IS25WP080D/040D/020D 8.27 READ EXTENDED READ PARAMETERS OPERATION (RDERP, 81h) Prior to, or after setting Extended Read Register, the data of the Extended Read Register can be confirmed by the RDERP command. The instruction is only applicable for the volatile Extended Read Register, not for the nonvolatile Extended Read Register. During the execution of a Program, Erase or Write Non-Volatile Register operation, the RDERP instruction will be executed, which can be used to check the progress or completion of an operation by reading the WIP bit. Figure 8.46 Read Extended Read Parameters Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK Mode 0 SI Instruction = 81h tV SO Data Out 7 6 5 4 3 2 1 Figure 8.47 Read Extended Read Parameters Sequence In QPI Mode CE# Mode 3 0 1 2 3 SCK Mode 0 tV IO[3:0] 81h 7:4 3:0 Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 68 0 IS25LP080D IS25WP080D/040D/020D 8.28 CLEAR EXTENDED READ PARAMETERS OPERATION (CLERP, 82h) A Clear Extended Read Register (CLERP) instruction clears PROT_E, P_ERR, and E_ERR error bits in the Extended Read Register to “0” when the error bits are set to “1”. Once the error bits are set to “1”, they remains set to “1” until they are cleared to “0” with a CLERP command. Figure 8.48 Clear Extended Read Parameters Sequence In SPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 82h SI High Impedance SO Figure 8.49 Clear Extended Read Parameters Sequence In QPI Mode CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 82h 69 IS25LP080D IS25WP080D/040D/020D 8.29 READ PRODUCT IDENTIFICATION (RDID, ABh) The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. It can support both SPI and QPI modes. The Read Product Identification (RDID) instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as table of Product Identification. The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SI during the rising SCK edge. Then the Device ID is shifted out on SO with the MSB first, each bit been shifted out during the falling edge of SCK. The RDID instruction is ended by driving CE# high. The Device ID (ID7-ID0) outputs repeatedly if additional clock cycles are continuously sent to SCK while CE# is at low. Table 8.5 Product Identification Manufacturer ID (MF7-MF0) ISSI Serial Flash 9Dh Instruction ABh 90h Part Number Device ID (ID7-ID0) 9Fh Memory Type + Capacity (ID15-ID0) IS25LP080D 13h 6014h IS25WP080D 13h 7014h IS25WP040D 12h 7013h IS25WP020D 11h 7012h Figure 8.50 RDID (Read Product Identification) Sequence In SPI Mode CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 SCK Mode 0 SI Instruction = ABh 3 Dummy Bytes tV SO Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Data Out Device ID (ID7-ID0) 70 IS25LP080D IS25WP080D/040D/020D Figure 8.51 RDID (Read Product Identification) Sequence In QPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 8 9 SCK Mode 0 tV IO[3:0] ABh Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 6 Dummy Cycles Device ID (ID7-ID0) 71 IS25LP080D IS25WP080D/040D/020D 8.30 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh) The JEDEC ID READ instruction allows the user to read the manufacturer and product ID of devices. Refer to Table 8.5 Product Identification for Manufacturer ID and Device ID. After the JEDEC ID READ command (9Fh in SPI mode, AFh in QPI mode) is input, the Manufacturer ID is shifted out MSB first followed by the 2-byte electronic ID (ID15-ID0) that indicates Memory Type and Capacity, one bit at a time. Each bit is shifted out during the falling edge of SCK. If CE# stays low after the last bit of the 2-byte electronic ID, the Manufacturer ID and 2-byte electronic ID will loop until CE# is pulled high. Figure 8.52 RDJDID (Read JEDEC ID In SPI Mode) Sequence CE # Mode 3 0 1 ... 7 8 9 15 ... 16 17 ... 23 24 25 ... SCK Mode 0 SI Instruction = 9Fh tV Manufacturer ID (MF7-MF0) SO Capacity (ID7-ID0) Memory Type (ID15-ID8) Figure 8.53 RDJDIDQ (Read JEDEC ID In QPI Mode) Sequence CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 IO[3:0] tV AFh 7:4 3:0 MF7-MF0 Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 7:4 3:0 ID15-ID8 7:4 3:0 ID7-ID0 72 31 IS25LP080D IS25WP080D/040D/020D 8.31 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h) The Read Device Manufacturer and Device ID (RDMDID) instruction allows the user to read the Manufacturer and product ID of devices. Refer to Table 8.5 Product Identification for Manufacturer ID and Device ID. The RDMDID instruction code is followed by two dummy bytes and one byte address (A7~A0), each bit being latched-in on SI during the rising edge of SCK. If one byte address is initially set as A0 = 0, then the Manufacturer ID is shifted out on SO with the MSB first followed by the Device ID (ID7- ID0). Each bit is shifted out during the falling edge of SCK. If one byte address is initially set as A0 = 1, then Device ID will be read first followed by the Manufacturer ID. The Manufacturer and Device ID can be read continuously alternating between the two until CE# is driven high. Figure 8.54 RDMDID (Read Product Identification) Sequence In SPI Mode CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47 SCK Mode 0 SI Instruction = 90h 3-byte Address tV Device ID (ID7-ID0) Manufacturer ID (MF7-MF0) SO Notes: 1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) → 1-byte Device ID (ID7-ID0) ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) → 1-byte Manufacturer ID (MF7-MF0) 2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is pulled high. Figure 8.55 RDMDID (Read Product Identification) Sequence In QPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 SCK Mode 0 tV IO[3:0] 90h 23:20 19:16 15:12 11:8 Instruction 3-byte Address 7:4 3:0 7:4 3:0 7:4 3:0 Manufacturer Device ID ID (MF7-MF0) (ID7-ID0) Notes: 1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) → 1-byte Device ID (ID7-ID0) ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) → 1-byte Manufacturer ID (MF7-MF0) 2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is pulled high. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 73 IS25LP080D IS25WP080D/040D/020D 8.31 READ UNIQUE ID NUMBER (RDUID, 4Bh) The Read Unique ID Number (RDUID) instruction accesses a factory-set read-only 16-byte number that is unique to the device. The ID number can be used in conjunction with user software methods to help prevent copying or cloning of a system. The RDUID instruction is instated by driving the CE# pin low and shifting the instruction code (4Bh) followed by 3 address bytes and dummy cycles (configurable, default is 8 clocks). After which, the 16-byte ID is shifted out on the falling edge of SCK as shown below. As a result, the sequence of RDUID instruction is same as FAST READ. RDUID QPI sequence is also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI operation. Note: 16 bytes of data will repeat as long as CE# is low and SCK is toggling. Figure 8.56 RDUID Sequence CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47 ... SCK Mode 0 SI Instruction = 4Bh 3 Byte Address Dummy Cycles tV SO Data Out Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. A[23:16] A[15:9] A[8:4] A[3:0] XXh XXh 00h 0h Byte address XXh XXh 00h 1h Byte address XXh XXh 00h 2h Byte address XXh XXh 00h … Table 8.6 Unique ID Addressing XXh XXh 00h Fh Byte address Note: XX means “don’t care”. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 74 IS25LP080D IS25WP080D/040D/020D 8.32 READ SFDP OPERATION (RDSFDP, 5Ah) The Serial Flash Discoverable Parameters (SFDP) standard provides a consistent method of describing the functions and features of serial Flash devices in a standard set of internal parameter tables. These parameters can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. For more details please refer to the JEDEC Standard JESD216 (Serial Flash Discoverable Parameters). The sequence of issuing RDSFDP instruction in SPI mode is: CE# goes low → Send RDSFDP instruction (5Ah) → Send 3 address bytes on SI pin → 8 dummy cycles on SI pin → Read SFDP code on SO → End RDSFDP operation by driving CE# high at any time during data out. Refer to ISSI’s Application note for SFDP table. The data at the addresses that are not specified in SFDP table are undefined. RDSFDP Sequence in QPI mode, has 8 dummy cycles before SFDP code, too. Figure 8.57 RDSFDP (Read SFDP) Sequence in SPI mode CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47 ... SCK Mode 0 SI Instruction = 5Ah 3 Byte Address Dummy Cycles tV SO Data Out 8.33 NO OPERATION (NOP, 00h) The No Operation command solely cancels a Reset Enable command and has no impact on any other commands. It is available in both SPI and QPI modes. To execute a NOP, the host drives CE# low, sends the NOP command cycle (00H), then drives CE# high. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 75 IS25LP080D IS25WP080D/040D/020D 8.34 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE RESET The Software Reset operation is used as a system reset that puts the device in normal operating mode. During the Reset operation, the value of volatile registers will default back to the value in the corresponding non-volatile register. This operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST). The operation requires the Reset-Enable command followed by the Reset command. Any command other than the Reset command after the Reset-Enable command will disable the Reset-Enable. Execute the CE# pin low → sends the Reset-Enable command (66h), and drives CE# high. Next, the host drives CE# low again, sends the Reset command (99h), and pulls CE# high. Only when the RESET# pin is enabled, Hardware Reset function is available. For the device with HOLD#/RESET#, the RESET# pin will be solely applicable when the QE bit = “0” and HOLD#/RESET# selection bit (P7) in Read Register is set to”1”. In order to activate Hardware Reset, the RESET# pin (or ball) must be driven low for a minimum period of tRESET (100ns). Drive RESET# low for a minimum period of tRESET will interrupt any on-going internal and external operations, release the device from deep power down mode1, disable all input signals, force the output pin enter a state of high impedance, and reset all the read parameters. The required wait time after activating a HW Reset before the device will accept another instruction is tHWRST of 35us. The Software/Hardware Reset during an active Program or Erase operation aborts the operation, which can result in corrupting or losing the data of the targeted address range. Depending on the prior operation, the reset timing may vary. Recovery from a Write operation will require more latency than recovery from other operations. Note1: The Status and Function Registers remain unaffected. Figure 8.58 Software Reset Enable and Software Reset Sequence In SPI Mode (RSTEN, 66h + RST, 99h) CE# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 SCK Mode 0 SI Instruction = 66h Instruction = 99h High Impedance SO Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 76 14 15 IS25LP080D IS25WP080D/040D/020D Figure 8.59 Software Reset Enable and Software Reset Sequence In QPI Mode (RSTEN, 66h + RST, 99h) CE# Mode 3 0 1 0 1 SCK Mode 0 IO[3:0] 99h 66h 8.35 SECURITY INFORMATION ROW The security Information Row is comprised of an additional 4 x 256 bytes of programmable information. The security bits can be reprogrammed by the user. Any program security instruction issued while an erase, program or write cycle is in progress is rejected without having any effect on the cycle that is in progress. Table 8.7 Information Row Valid Address Range Address Assignment IRL0 (Information Row Lock0) IRL1 IRL2 IRL3 A[23:16] 00h 00h 00h 00h A[15:8] 00h 10h 20h 30h A[7:0] Byte address Byte address Byte address Byte address Bit 7~4 of the Function Register is used to permanently lock the programmable memory array. When Function Register bit IRLx = “0”, the 256 bytes of the programmable memory array can be programmed. When Function Register bit IRLx = “1”, the 256 bytes of the programmable memory array function as read only. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 77 IS25LP080D IS25WP080D/040D/020D 8.36 INFORMATION ROW ERASE OPERATION (IRER, 64h) Information Row Erase (IRER) instruction erases the data in the Information Row x (x: 0~3) array. Prior to the operation, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically reset after the completion of the operation. The sequence of IRER operation: Pull CE# low to select the device → Send IRER instruction code → Send three address bytes → Pull CE# high. CE# should remain low during the entire instruction sequence. Once CE# is pulled high, Erase operation will begin immediately. The internal control logic automatically handles the erase voltage and timing. Figure 8.60 IRER (Information Row Erase) Sequence CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 1 0 SCK Mode 0 3-byte Address SI SO Instruction = 64h 23 22 21 ... 3 2 High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 78 IS25LP080D IS25WP080D/040D/020D 8.37 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) The Information Row Program (IRP) instruction allows up to 256 bytes data to be programmed into the memory in a single operation. Before the execution of IRP instruction, the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. The IRP instruction code, three address bytes and program data (1 to 256 bytes) should be sequentially input. Three address bytes has to be input as specified in the Table 8.7 Information Row Valid Address Range. Program operation will start once the CE# goes high, otherwise the IRP instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. The progress or completion of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page. The previously latched data are discarded and the last 256 bytes data are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. Note: A program operation can alter “1”s into “0”s, The same byte location or Information Row array may be programmed more than once to incrementally change “1” to “0”s. An erase operation is required to change “0”s back to “1”s. Figure 8.61 IRP (Information Row Program) Sequence 1 ... 7 8 9 ... 31 32 33 ... 39 ... ... 2079 Mode 3 0 2072 CE # SCK Mode 0 SI SO 3-byte Address Instruction = 62h 23 22 ... Data In 1 0 7 6 ... Data In 256 0 ... 7 ... High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 79 0 IS25LP080D IS25WP080D/040D/020D 8.38 INFORMATION ROW READ OPERATION (IRRD, 68h) The IRRD instruction is used to read memory data at up to a 133MHz clock. The IRRD instruction code is followed by three address bytes (A23 - A0) and dummy cycles (configurable, default is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK. The address is automatically incremented by one after each byte of data is shifted out. Once the address reaches the last address of each 256 byte Information Row, the next address will not be valid and the data of the address will be garbage data. It is recommended to repeat four times IRRD operation that reads 256 byte with a valid starting address of each Information Row in order to read all data in the 4 x 256 byte Information Row array. The IRRD instruction is terminated by driving CE# high (VIH). If an IRRD instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is ignored and will not have any effects on the current cycle. The sequence of IRRD instruction is same as FAST READ except for the instruction code. IRRD QPI sequence is also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI operation. Figure 8.62 IRRD (Information Row Read) Sequence CE # Mode 3 0 1 ... 7 8 9 ... 31 32 33 ... 39 40 41 ... 47 ... SCK Mode 0 SI Instruction = 68h 3 Byte Address Dummy Cycles tV SO Data Out Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 80 IS25LP080D IS25WP080D/040D/020D 8.39 FAST READ DTR MODE OPERATION IN SPI MODE (FRDTR, 0Dh) The FRDTR instruction is for doubling the data in and out. Signals are triggered on both rising and falling edge of clock. The address is latched on both rising and falling edge of SCK, and data of each bit shifts out on both rising and falling edge of SCK at a maximum frequency. The 2-bit address can be latched-in at one clock, and 2-bit data can be read out at one clock, which means one bit at the rising edge of clock, the other bit at the falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte of data is shifted out, so the whole memory can be read out in a single FRDTR instruction. The address counter rolls over to 0 when the highest address is reached. The sequence of issuing FRDTR instruction is: CE# goes low → Sending FRDTR instruction code (1bit per clock) → 3-byte address on SI (2-bit per clock) → 8 dummy clocks (configurable, default is 8 clocks) on SI → Data out on SO (2-bit per clock) → End FRDTR operation via driving CE# high at any time during data out. While a Program/Erase/Write Status Register cycle is in progress, FRDTR instruction will be rejected without any effect on the current cycle. Figure 8.63 FRDTR Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 19 20 21 SCK Mode 0 3-byte Address SI Instruction = 0Dh 23 22 21 20 19 18 17 ... 0 High Impedance SO CE # 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ... SCK SI 8 Dummy Cycles tV Data Out 1 SO Data Out 2 Data Out ... 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 ... Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 81 IS25LP080D IS25WP080D/040D/020D FAST READ DTR MODE OPERATION IN QPI MODE (FRDTR, 0Dh) The FRDTR QPI instruction utilizes all four IO lines to input the instruction code so that only two clocks are required, while the FRDTR instruction requires that the byte-long instruction code is shifted into the device only via IO0 line in eight clocks. In addition, subsequent address and data out are shifted in/out via all four IO lines unlike the FRDTR instruction. Eventually this operation is same as the FRQDTR QPI, but the only different thing is that AX mode is not available in the FRDTR QPI operation. The sequence of issuing FRDTR QPI instruction is: CE# goes low → Sending FRDTR QPI instruction (4-bit per clock) → 24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → 6 dummy clocks (configurable, default is 6 clocks) → Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → End FRDTR QPI operation by driving CE# high at any time during data out. If the FRDTR QPI instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle. Figure 8.64 FRDTR Sequence In QPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 ... SCK Mode 0 IO0 IO1 IO2 IO3 Instruction = 0Dh 6 Dummy Cycles 3-byte Address tV Data Data Out Out 4 0 20 16 12 8 4 0 4 0 4 0 ... 5 1 21 17 13 9 5 1 5 1 5 1 ... 6 2 22 18 14 10 6 2 6 2 6 2 ... 7 3 23 19 15 11 7 3 7 3 7 3 ... Notes: 1. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 2. Sufficient dummy cycles are required to avoid I/O contention. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 82 IS25LP080D IS25WP080D/040D/020D 8.40 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh) The FRDDTR instruction enables Double Transfer Rate throughput on dual I/O of the device in read mode. The address (interleave on dual I/O pins) is latched on both rising and falling edge of SCK, and the data (interleave on dual I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency. The 4-bit address can be latched-in at one clock, and 4-bit data can be read out at one clock, which means two bits at the rising edge of clock, the other two bits at the falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte of data is shifted out, so the whole memory can be read out with a single FRDDTR instruction. The address counter rolls over to 0 when the highest address is reached. Once writing FRDDTR instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit. The sequence of issuing FRDDTR instruction is: CE# goes low → Sending FRDDTR instruction (1-bit per clock) → 24-bit address interleave on IO1 & IO0 (4-bit per clock) → 4 dummy clocks (configurable, default is 4 clocks) on IO1 & IO0 → Data out interleave on IO1 & IO0 (4-bit per clock) → End FRDDTR operation via pulling CE# high at any time during data out (Please refer to Figure 8.64 for 2 x I/O Double Transfer Rate Read Mode Timing Waveform). If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation mode which enables subsequent FRDDTR execution skips command code. It saves cycles as described in Figure 8.65. When the code is different from AXh, the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. If the FRDDTR instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 83 IS25LP080D IS25WP080D/040D/020D Figure 8.65 FRDDTR Sequence (with command decode cycles) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 ... 13 14 SCK Mode 0 3-byte Address IO0 Instruction = BDh 22 20 18 16 14 12 10 4 Dummy Cycles ... 0 6 4 Mode Bits High Impedance IO1 23 21 19 17 15 13 11 ... 1 7 5 CE # 15 16 17 18 19 20 21 22 23 24 25 26 27 28 ... 29 SCK tV IO0 2 0 Data Out Data Out Data Out Data Out Data Out Data Out 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 ... Mode Bits IO1 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 ... Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 84 IS25LP080D IS25WP080D/040D/020D Figure 8.66 FRDDTR AX Read Sequence (without command decode cycles) CE # Mode 3 0 1 2 ... 6 7 8 9 10 11 12 13 14 15 16 ... SCK Mode 0 4 Dummy Cycles 3-byte Address IO0 22 20 18 16 14 12 10 ... 0 6 4 2 0 tV Data Out Data Out Data Out 6 4 2 0 6 4 2 0 6 4 2 0 ... Mode Bits IO1 23 21 19 17 15 13 11 ... 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 ... Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 85 IS25LP080D IS25WP080D/040D/020D 8.41 FAST READ QUAD IO DTR MODE OPERATION IN SPI MODE (FRQDTR, EDh) The FRQDTR instruction enables Double Transfer Rate throughput on quad I/O of the device in read mode. A Quad Enable (QE) bit of Status Register must be set to "1" before sending the FRQDTR instruction. The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCK, and data (interleave on 4 I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency. The 8-bit address can be latched-in at one clock, and 8-bit data can be read out at one clock, which means four bits at the rising edge of clock, the other four bits at the falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out with a single FRQDTR instruction. The address counter rolls over to 0 when the highest address is reached. Once writing FRQDTR instruction, the following address/dummy/data out will perform as 8-bit instead of previous 1-bit. The sequence of issuing FRQDTR instruction is: CE# goes low → Sending FRQDTR instruction (1-bit per clock) → 24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → 6 dummy clocks (configurable, default is 6 clocks) → Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → End FRQDTR operation by driving CE# high at any time during data out. If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation mode which enables subsequent FRQDTR execution skips command code. It saves cycles as described in Figure 8.68. When the code is different from AXh, the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. If the FRQDTR instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 86 IS25LP080D IS25WP080D/040D/020D Figure 8.67 FRQDTR Sequence (with command decode cycles) CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 SCK Mode 0 3-byte Address IO0 Instruction = EDh 6 Dummy Cycles 20 16 12 8 4 0 4 0 High Impedance IO1 21 17 13 9 5 1 5 1 IO2 22 18 14 10 6 2 6 2 IO3 23 19 15 11 7 3 7 3 Mode Bits CE # 13 14 15 16 17 18 19 20 21 22 23 24 25 26 ... SCK Data Data Data Data Data Data Data Data Data Data tV Out Out Out Out Out Out Out Out Out Out IO0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0 ... IO1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 5 1 ... IO2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 6 2 ... IO3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 7 3 ... Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 87 IS25LP080D IS25WP080D/040D/020D Figure 8.68 FRQDTR Sequence (without command decode cycles) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 ... SCK Mode 0 6 Dummy Cycles 3-byte Address IO0 IO1 IO2 IO3 Data Data Data Data tV Out Out Out Out 20 16 12 8 4 0 4 0 4 0 4 0 4 0 4 0 ... 21 17 13 9 5 1 5 1 5 1 5 1 5 1 5 1 ... 22 18 14 10 6 2 6 2 6 2 6 2 6 2 6 2 ... 23 19 15 11 7 3 7 3 7 3 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 88 IS25LP080D IS25WP080D/040D/020D FAST READ QUAD IO DTR MODE OPERATION IN QPI MODE (FRQDTR QPI, EDh) The FRQDTR QPI instruction utilizes all four IO lines to input the instruction code so that only two clocks are required, while the FRQDTR instruction requires that the byte-long instruction code is shifted into the device only via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQDTR QPI instruction. In addition, subsequent address and data out are shifted in/out via all four IO lines like the FRQDTR instruction. In fact, except for the command cycle, the FRQDTR QPI operation is exactly same as the FRQDTR. The sequence of issuing FRQDTR QPI instruction is: CE# goes low → Sending FRQDTR QPI instruction (4-bit per clock) → 24-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → 6 dummy clocks (configurable, default is 6 clocks) → Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) → End FRQDTR QPI operation by driving CE# high at any time during data out. If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation mode which enables subsequent FRQDTR QPI execution skips command code. It saves cycles as described in Figure 8.68. When the code is different from AXh, the device exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command. If the FRQDTR QPI instruction is issued while a Program/Erase/Write Status Register cycle is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle. Figure 8.69 FRQDTR QPI Sequence (with command decode cycles) CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 ... SCK Mode 0 IO0 IO1 IO2 IO3 Instruction = EDh 6 Dummy Cycles 3-byte Address tV Data Data Out Out 4 0 20 16 12 8 4 0 4 0 4 0 4 0 ... 5 1 21 17 13 9 5 1 5 1 5 1 5 1 ... 6 2 22 18 14 10 6 2 6 2 6 2 6 2 ... 7 3 23 19 15 11 7 3 7 3 7 3 7 3 ... Mode Bits Notes: 1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode bits are different from AXh, the device exits the AX read operation. 2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles. 3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bit cycles are same, then X should be Hi-Z. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 89 IS25LP080D IS25WP080D/040D/020D 8.42 SECTOR LOCK/UNLOCK FUNCTIONS SECTOR UNLOCK OPERATION (SECUNLOCK, 26h) The Sector Unlock command allows the user to select a specific sector to allow program and erase operations. This instruction is effective when the blocks are designated as write-protected through the BP0, BP1, BP2, and BP3 bits in the Status Register. Only one sector can be enabled at any time. To enable a different sector, a previously enabled sector must be disabled by executing a Sector Lock command. The instruction code is followed by a 24-bit address specifying the target sector, but A0 through A11 are not decoded. The remaining sectors within the same block remain as read-only. Figure 8.70 Sector Unlock Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 ... 28 29 30 31 1 0 SCK Mode 0 3-byte Address SI SO Instruction = 26h 23 22 21 ... 4 5 6 7 7:4 3:0 3 2 High Impedance Figure 8.71 Sector Unlock QPI Sequence In QPI Mode CE# Mode 3 0 1 2 3 SCK Mode 0 Instruction IO[3:0] 26h Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 3-byte Address 23:20 19:16 15:12 11:8 90 IS25LP080D IS25WP080D/040D/020D SECTOR LOCK OPERATION (SECLOCK, 24h) The Sector Lock command relocks a sector that was previously unlocked by the Sector Unlock command. The instruction code does not require an address to be specified, as only one sector can be enabled at a time. The remaining sectors within the same block remain in read-only mode. Figure 8.72 Sector Lock Sequence In SPI Mode CE# Mode 3 0 1 2 3 4 5 6 7 SCK Mode 0 Instruction = 24h SI High Impedance SO Figure 8.73 Sector Lock QPI Sequence In QPI Mode CE# Mode 3 0 1 SCK Mode 0 IO[3:0] Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 24h 91 IS25LP080D IS25WP080D/040D/020D 8.43 AUTOBOOT SPI devices normally require 32 or more cycles of command and address shifting to initiate a read command. And, in order to read boot code from an SPI device, the host memory controller or processor must supply the read command from a hardwired state machine or from some host processor internal ROM code. Parallel NOR devices need only an initial address, supplied in parallel in a single cycle, and initial access time to start reading boot code. The AutoBoot feature allows the host memory controller to take boot code from the device immediately after the end of reset, without having to send a read command. This saves 32 or more cycles and simplifies the logic needed to initiate the reading of boot code. • As part of the Power-up Reset, Hardware Reset, or Software Reset process the AutoBoot feature automatically starts a read access from a pre-specified address. At the time the reset process is completed, the device is ready to deliver code from the starting address. The host memory controller only needs to drive CE# signal from high to low and begin toggling the SCK signal. The device will delay code output for a pre-specified number of clock cycles before code streams out. – The Auto Boot Start Delay (ABSD) field of the AutoBoot register specifies the initial delay if any is needed by the host. – The host cannot send commands during this time. – If QE bit (Bit 6) in the Status Register is set to “1”, Fast Read Quad I/O operation will be selected and initial delay is the same as dummy cycles of Fast Read Quad I/O Read operation. If it is set to “0”, Fast Read operation will be applied and initial delay is the same as dummy cycles of Fast Read operation. Maximum operation frequency will be 133MHz for both operations. • The starting address of the boot code is selected by the value programmed into the AutoBoot Start Address (ABSA) field of the AutoBoot Register. – Data will continuously shift out until CE# returns high. • At any point after the first data byte is transferred, when CE# returns high, the SPI device will reset to standard SPI mode; able to accept normal command operations. – A minimum of one byte must be transferred. – AutoBoot mode will not initiate again until another power cycle or a reset occurs. • An AutoBoot Enable bit (ABE) is set to enable the AutoBoot feature. The AutoBoot register bits are non-volatile and provide: • The starting address set by the AutoBoot Start Address (ABSA). • The number of initial delay cycles, set by the AutoBoot Start Delay (ABSD) 4-bit count value. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 92 IS25LP080D IS25WP080D/040D/020D Figure 8.74 AutoBoot Sequence (QE = 0) CE # Mode 3 0 1 2 ... n-1 n n+2 n+1 n+3 n+4 n+5 n+6 n+7 n+8 n+9 ... n+10 SCK Mode 0 SI ABSD Delay (n) tV SO 7 6 5 3 4 2 1 0 7 ... 6 High Impedance Data Out 1 Data Out 2 ... Figure 8.75 AutoBoot Sequence (QE = 1) CE # Mode 3 0 1 2 ... n-1 n+2 n+1 n n+3 n+4 n+5 n+7 n+6 n+9 n+8 n+10 SCK Mode 0 ABSD Delay (n) tV IO0 4 0 4 0 4 0 4 0 4 0 ... IO1 5 1 5 1 5 1 5 1 5 1 ... IO2 6 2 6 2 6 2 6 2 6 2 ... IO3 7 3 7 3 7 3 7 3 7 3 ... High Impedance Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Data Out 1 Data Out 2 Data Out 3 Data Out 4 Data Out 5 93 ... ... IS25LP080D IS25WP080D/040D/020D AUTOBOOT REGISTER READ OPERATION (RDABR, 14h) The AutoBoot Register Read command is shifted in. Then the 32-bit AutoBoot Register is shifted out, least significant byte first, most significant bit of each byte first. It is possible to read the AutoBoot Register continuously by providing multiples of 32 bits. Figure 8.76 RDABR Sequence In SPI Mode CE # Mode 3 0 1 2 3 4 5 6 8 7 9 10 11 12 13 14 ... 15 SCK Mode 0 SI Instruction = 14h tV SO 7 6 5 4 3 2 1 Data Out 1 Figure 8.77 RDABR Sequence In QPI Mode CE# Mode 3 0 1 2 ... 3 SCK Mode 0 tV IO[3:0] 14h 7:4 3:0 ... Data Out Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 94 0 ... IS25LP080D IS25WP080D/040D/020D AUTOBOOT REGISTER WRITE OPERATION (WRABR, 15h) Before the WRABR command can be accepted, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WRABR command is entered by shifting the instruction and the data bytes, least significant byte first, most significant bit of each byte first. The WRABR data is 32 bits in length. CE# must be driven high after the 32nd bit of data has been latched. If not, the WRABR command is not executed. As soon as CE# is driven high, the WRABR operation is initiated. While the WRABR operation is in progress, Status Register may be read to check the value of the Write-In Progress (WIP) bit. The WIP bit is “1” during the WRABR operation, and is a 0 when it is completed. When the WRABR cycle is completed, the WEL is set to “0”. Figure 8.78 WRABR Sequence in SPI mode CE # Mode 3 0 1 2 3 4 5 7 6 8 9 10 11 12 13 14 15 7 6 5 4 3 2 1 0 ... SCK Mode 0 SI Instruction = 15h Data In 1 SO High Impedance Figure 8.79 WRABR Sequence In QPI Mode CE# Mode 3 0 1 2 3 7:4 3:0 ... SCK Mode 0 IO[3:0] 15h ... Data In 1 Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 95 ... IS25LP080D IS25WP080D/040D/020D 9. ELECTRICAL CHARACTERISTICS 9.1 ABSOLUTE MAXIMUM RATINGS (1) Storage Temperature Input Voltage with Respect to Ground on All Pins All Output Voltage with Respect to Ground IS25LP IS25WP VCC Electrostatic Discharge Voltage (Human Body Model)(2) -65°C to +150°C -0.5V to VCC + 0.5V -0.5V to VCC + 0.5V -0.5V to +6.0V -0.5V to +2.5V -2000V to +2000V Notes: 1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. ANSI/ESDA/JEDEC JS-001 9.2 OPERATING RANGE Operating Temperature VCC Power Supply Extended Grade E -40°C to 105°C Automotive Grade A3 -40°C to 125°C IS25LP 2.3V (VMIN) – 3.6V (VMAX); 3.0V (Typ) IS25WP 1.65V (VMIN) –1.95V (VMAX); 1.8V (Typ) Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 96 IS25LP080D IS25WP080D/040D/020D 9.3 DC CHARACTERISTICS (Under operating range) Symbol ICC1 Typ(2) Max NORD at 50MHz 4 12 FRD Single at 133MHz 6 14 FRD Dual at 133MHz 8 15 FRD Quad at 133MHz 10 17 FRD Quad at 84MHz 8 15 FRD Quad at 104MHz 9 16 FRD Single DTR at 66MHz 6 14 FRD Dual DTR at 66MHz 8 15 10 17 Parameter Condition VCC Active Read current (3) Min FRD Quad DTR at 66MHz 85°C ICC2 VCC Program Current CE# = VCC 105°C 22 25 25 85°C VCC WRSR Current CE# = VCC mA 25 125°C ICC3 Units 25 105°C 22 25 125°C 25 85°C 25 mA ICC4 ICC5 ISB1 VCC Erase Current (SER/BER32/BER64) CE# = VCC VCC Erase Current (CE) CE# = VCC VCC Standby Current CMOS IS25LP ISB2 CE# = VCC, VIN = GND or VCC CE# = VCC, VIN = GND or VCC Deep power down current IS25WP CE# = VCC, VIN = GND or VCC 105°C 22 25 125°C 25 85°C 25 105°C 22 25 125°C 25 85°C 15 (4) 105°C 20 (4) 8 125°C 30 85°C 10 (4) 105°C 15 (4) 6 125°C 20 85°C 5 (4) 105°C µA µA 10 (4) 1 125°C 15 ILI Input Leakage Current VIN = 0V to VCC ±1 µA ILO Output Leakage Current VIN = 0V to VCC ±1 µA VIL (1) Input Low Voltage -0.5 0.3VCC V VIH(1) Input High Voltage 0.7VCC VCC + 0.3 V VOL Output Low Voltage IOL = 100 µA 0.2 V VOH Output High Voltage IOH = -100 µA Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 VCC - 0.2 V 97 IS25LP080D IS25WP080D/040D/020D Notes: 1. Maximum DC voltage on input or I/O pins is VCC + 0.5V. During voltage transitions, input or I/O pins may overshoot VCC by + 2.0V for a period of time not to exceed 20ns. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, input or I/O pins may undershoot GND by -2.0V for a period of time not to exceed 20ns. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (Typ), TA=25°C. 3. Outputs are unconnected during reading data so that output switching current is not included. 4. These parameters are characterized and are not 100% tested. 9.4 AC MEASUREMENT CONDITIONS Symbol Max Units Load Capacitance up to 104MHz 30 pF Load Capacitance up to 133MHz 15 pF TR,TF Input Rise and Fall Times 5 ns VIN Input Pulse Voltages 0.2VCC to 0.8VCC V VREFI Input Timing Reference Voltages 0.3VCC to 0.7VCC V VREFO Output Timing Reference Voltages 0.5VCC V CL Parameter Min Figure 9.1 Output test load & AC measurement I/O Waveform 0.8VCC Input AC Measurement Level VCC/2 1.8k 0.2VCC OUTPUT PIN 1.2k 15/30pf 9.5 PIN CAPACITANCE (TA = 25°C, VCC=3V (IS25LPx), 1.8V (IS25WPx), 1MHz) Symbol CIN CIN/OUT Parameter Input Capacitance (CE#, SCK) Input/Output Capacitance (other pins) Test Condition Min Typ Max Units VIN = 0V - - 6 pF VIN/OUT = 0V - - 8 pF Notes: 1. These parameters are characterized and are not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 98 IS25LP080D IS25WP080D/040D/020D 9.6 AC CHARACTERISTICS (Under operating range, refer to section 9.4 for AC measurement conditions) Symbol Typ(3) Parameter Clock Frequency for fast read: SPI, Dual, Dual I/O, Quad I/O, and QPI. Clock Frequency for fast read DTR: SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, and QPI DTR. Clock Frequency for read (03h) Min tCLCH(1) SCK Rise Time (peak to peak) 0.1 V/ns (1) SCK Fall Time ( peak to peak) 0.1 V/ns fCT fC tCHCL Max Units 0 133 MHz 0 66 MHz 0 50 MHz For read (03h) 0.45 x 1/fCmax For others 0.45 x 1/fCTmax For read (03h) 0.45 x 1/fCmax For others 0.45 x 1/fCTmax tCKH SCK High Time tCKL SCK Low Time tCEH CE# High Time 7 ns tCS CE# Setup Time 5 ns tCH CE# Hold Time 5 ns tSHCH CE# Not Active Setup Time 2.7 ns tCHSL CE# Not Active Hold Time 2.7 ns tDS Data In Setup Time tDH Data in Hold Time tV Output Valid tOH tDIS STR 2 DTR 1.5 STR 2 DTR 1.5 tWHSL ns ns ns @ 133MHz (CL = 15pF) 7 @ 104MHz (CL = 30pF) 8 Output Hold Time (1) ns 2 ns Output Disable Time (3) ns 8 ns Write Protect Setup Time 20 ns tSHWL(3) Write Protect Hold Time 100 ns tHLCH HOLD Active Setup Time relative to SCK 2 ns tCHHH HOLD Active Hold Time relative to SCK 2 ns tHHCH HOLD Not Active Setup Time relative to SCK 2 ns tCHHL HOLD Not Active Hold Time relative to SCK 2 ns tLZ(1) HOLD to Output Low Z tHZ(1) HOLD to Output High Z tEC ns 12 ns Sector Erase Time (4Kbyte) 70 300 ms Block Erase Time (32Kbyte) 0.1 0.5 s s Block Erase time (64Kbyte) Chip Erase Time tPP 12 0.15 1.0 2Mb(4) 0.5 1.7 4Mb(4) 1 3 8Mb 2 6 0.2 0.8 Page Program Time Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 99 s ms IS25LP080D IS25WP080D/040D/020D Symbol Parameter tRES1(1) Release deep power down tDP(1) Deep power down tW Write Status Register time tSUS(1) TRS (1) tSRST(1) tRESET (1) tHWRST(1) Min Typ(2) Max IS25LP 3 IS25WP 5 Units µs 3 µs 2 15 ms Suspend to read ready 100 - µs Resume to next suspend 80 Software Reset recovery time RESET# pin low pulse width - µs 35 µs 35 µs 100 ns Hardware Reset recovery time Notes: 1. These parameters are characterized and not 100% tested. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (Typ), TA=25°C. 3. Only applicable as a constraint for a WRITE STATUS REGISTER command when SRWD is set at 1. 4. 4Mb/2Mb are available only for 1.8V device. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 100 IS25LP080D IS25WP080D/040D/020D 9.7 SERIAL INPUT/OUTPUT TIMING Figure 9.2 SERIAL INPUT TIMING (STR Mode) tCEH CE# tCHSL tCS tCH tSHCH SCK tDS tDH MSB IN SI or IO LSB IN Figure 9.3 SERIAL INPUT TIMING (DTR Mode) tCEH CE# tCHSL tCH tCS tSHCH SCK tDS tDH SI or IO MSB Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 LSB 101 IS25LP080D IS25WP080D/040D/020D Figure 9.4 OUTPUT TIMING (STR Mode) CE# tCKH SCK tV tOH tCKL MSB OUT SO or IO tDIS LSB OUT Figure 9.5 OUTPUT TIMING (DTR Mode) CE# tCKH SCK tV SO or IO tOH MSB Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 tCKL tDIS LSB 102 IS25LP080D IS25WP080D/040D/020D Figure 9.6 HOLD TIMING CE# tHLCH tCHHL tHHCH SCK tCHHH tHZ tLZ SO SI HOLD# Figure 9.7 WRITE PROTECT SETUP AND HOLD TIMIMNG DURING WRITE STATUS REGISTER (SRWD=1) WP# tWHSL tSHWL CE # Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2 1 0 SCK Mode 0 SI SO Data In Instruction = 01h 7 6 5 4 3 High Impedence Note: WP# must be kept high until the embedded operation finish. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 103 IS25LP080D IS25WP080D/040D/020D 9.8 POWER-UP AND POWER-DOWN At Power-up and Power-down, the device must be NOT SELECTED until Vcc reaches at the right level. (Adding a simple pull-up resistor on CE# is recommended.) Power up timing VCC VCC ( max) Chip Selection Not Allowed VCC(min) tVCE = Vcc min. to CE# Low Device is fully accessible VWI Time Symbol Parameter tVCE(1) Vcc(min) to CE# Low VWI(1) Write Inhibit Voltage Min. Max 300 us IS25LP 2.1 IS25WP 1.4 Note: These parameters are characterized and not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 Unit 104 V IS25LP080D IS25WP080D/040D/020D 9.9 PROGRAM/ERASE PERFORMANCE Parameter Typ Max Unit Sector Erase Time (4Kbyte) 70 300 ms Block Erase Time (32Kbyte) 0.1 0.5 s s Block Erase Time (64Kbyte) Chip Erase Time 0.15 1.0 2Mb 0.5 1.7 4Mb 1 3 8Mb s 2 6 Page Programming Time 0.2 0.8 ms Byte Program 8 40 µs Note: These parameters are characterized and not 100% tested. 9.10 RELIABILITY CHARACTERISTICS Parameter Min Max Unit Test Method Endurance 100,000 - Cycles JEDEC Standard A117 Data Retention 20 - Years JEDEC Standard A117 Latch-Up -100 +100 mA JEDEC Standard 78 Note: These parameters are characterized and not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 105 IS25LP080D IS25WP080D/040D/020D 10. PACKAGE TYPE INFORMATION 10.1 8-PIN JEDEC 208MIL BROAD SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) PACKAGE (B) Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 106 IS25LP080D IS25WP080D/040D/020D 10.2 8-PIN JEDEC 150MIL BROAD SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) PACKAGE (N) Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 107 IS25LP080D IS25WP080D/040D/020D 10.3 8-PIN 150MIL VVSOP PACKAGE (V) Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 108 IS25LP080D IS25WP080D/040D/020D 10.4 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (USON) PACKAGE 2X3MM (U) Note: 1. Please click here to refer to Application Note (AN25D011, Thin USON/WSON/XSON package handling precautions) for assembly guidelines. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 109 IS25LP080D IS25WP080D/040D/020D 10.5 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (USON) PACKAGE 4X3MM (T) Note: 1. Please click here to refer to Application Note (AN25D011, Thin USON/WSON/XSON package handling precautions) for assembly guidelines. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 110 IS25LP080D IS25WP080D/040D/020D 10.6 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 6X5MM (K) Note: 1. Please click here to refer to Application Note (AN25D011, Thin USON/WSON/XSON package handling precautions) for assembly guidelines. Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 111 IS25LP080D IS25WP080D/040D/020D 11. ORDERING INFORMATION - Valid Part Numbers IS25LP 080 D - J B L E :P PBO (Polybenzoxazole) LAYER :P = Die Overcoat process-PBO layer (Call Factory) Blank = Without Die Overcoat process-PBO layer TEMPERATURE RANGE E = Extended (-40°C to +105°C) A3 = Automotive Grade (-40°C to +125°C) PACKAGING CONTENT L = RoHS compliant PACKAGE Type (1) B = 8-pin SOIC 208mil N = 8-pin SOIC 150mil V = 8-pin VVSOP 150mil K = 8-contact WSON 6x5mm U = 8-contact USON 2x3mm T = 8-contact USON 4x3mm (Call Factory) W = KGD (Call Factory) Option J = Standard Q = QE bit set to 1 Die Revision D = Revision D Density 080 = 8 Megabit 040 = 4 Megabit 020 = 2 Megabit BASE PART NUMBER IS = Integrated Silicon Solution Inc. 25LP = FLASH, 2.30V ~ 3.60V, QPI 25WP = FLASH, 1.65V ~ 1.95V, QPI Note: 1. Call Factory for other package options available Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 112 IS25LP080D IS25WP080D/040D/020D Density, Voltage 8Mb, 3V Density, Voltage 8Mb, 1.8V 4Mb, 1.8V 2Mb, 1.8V Frequency (MHz) STR 133, DTR 66 Frequency (MHz) STR 133, DTR 66 STR 133, DTR 66 STR 133, DTR 66 Order Part Number(1) Package IS25LP080D-JBLE 8-pin SOIC 208mil IS25LP080D-JNLE 8-pin SOIC 150mil IS25LP080D-JVLE 8-pin VVSOP 150mil (Call Factory) IS25LP080D-JKLE 8-contact WSON 6x5mm IS25LP080D-JULE 8-contact USON 2x3mm IS25LP080D-JBLA3 8-pin SOIC 208mil IS25LP080D-JNLA3 8-pin SOIC 150mil IS25LP080D-JKLA3 8-contact WSON 6x5mm IS25LP080D-JULA3 8-contact USON 2x3mm IS25LP080D-QULA3 8-contact USON 2x3mm Order Part Number Package IS25WP080D-JBLE 8-pin SOIC 208mil IS25WP080D-JNLE 8-pin SOIC 150mil IS25WP080D-JVLE 8-pin VVSOP 150mil IS25WP080D-JKLE 8-contact WSON 6x5mm (Call Factory) IS25WP080D-JULE 8-contact USON 2x3mm IS25WP080D-JBLA3 8-pin SOIC 208mil IS25WP080D-JNLA3 8-pin SOIC 150mil IS25WP080D-JKLA3 8-contact WSON 6x5mm IS25WP080D-JULA3 8-contact USON 2x3mm IS25WP040D-JNLE 8-pin SOIC 150mil (Call Factory) IS25WP040D-JVLE 8-pin VVSOP 150mil IS25WP040D-JULE 8-contact USON 2x3mm (Call Factory) IS25WP040D-JNLA3 8-pin SOIC 150mil IS25WP040D-JULA3 8-contact USON 2x3mm IS25WP020D-JNLE 8-pin SOIC 150mil IS25WP020D-JVLE 8-pin VVSOP 150mil IS25WP020D-JULE 8-contact USON 2x3mm IS25WP020D-JNLA3 8-pin SOIC 150mil IS25WP020D-JULA3 8-contact USON 2x3mm (Call Factory) Notes: 1. A3 meets AEC-Q100 requirements with PPAP. Temp Grades: E= -40 to 105°C, A3= -40 to 125°C Integrated Silicon Solution, Inc.- www.issi.com Rev. B13 06/22/2021 113