IS34MW04G084/164
IS35MW04G084/164
4Gb SLC-4b ECC
1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND
INTERFACE
IS34/35MW04G084/164
4Gb(x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC
FEATURES
-
Flexible & Efficient Memory
Architecture
- Command/Address/Data Multiplexed I/O
Interface
- Command Register Operation
- Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
- NOP: 4 cycles
- Cache Program Operation for High
Performance Program
- Cache Read Operation
- Copy-Back Operation
- EDO mode
- OTP operation
- Two-Plane Operation
- Bad-Block-Protect
- Memory Cell: 1bit/Memory Cell
- Organization: 512Mb x8 /256Mb x16
- X8:
- Memory Cell Array: (512M + 16M) x 8bit
- Data Register: (2K + 64) x 8bit
- Page Size: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- X16:
- Memory Cell Array: (256M + 8M) x 16bit
- Data Register: (1K + 32) x 16bit
- Page Size: (1K + 32) Byte
- Block Erase: (64K + 2K) Byte
Efficient Read and Program modes
Highest performance
- Read Performance
- Random Read: 25us (Max.)
- Serial Access: 45ns (Max.)
- Write Performance
- Program time: 300us - typical
- Block Erase time: 3ms – typical
-
Low Power with Wide Temp. Ranges
Single 1.8V (1.7V to 1.95V) Voltage
Supply
15 mA Active Read Current
10 µA Standby Current
T emp Grades:
- Industrial: -40°C to +85°C
- Extended: -40°C to +105°C (1)
- Automotive, A1: -40°C to +85°C
- Automotive, A2: -40°C to +105°C (1)
Advanced Security Protection
- Hardware Data Protection:
- Program/Erase Lockout during Power
Transitions
Industry Standard Pin-out & Packages
- T =48-pin TSOP 1
Note:
1.
Call Factory
-
Reliable CMOS Floating Gate
Technology
-
ECC Requirement: X8 - 4bit/512Byte
X16 - 4bit/256Word
Endurance: 100K Program/Erase cycles
Data Retention: 10 years
-
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GENERAL DESCRIPTION
The IS34/35MW4G084/164 are 512Mx8/256Mx16 bit with spare 16Mx8/8Mx16 bit capacity. The devices
are offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the
solid state mass storage market. The memory is divided into blocks that can be erased independently
so it is possible to preserve valid data while old data is erased.
The device contains 4,096 blocks, composed by 64 pages consisting in two NAND structures of 32
series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 300us
and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block (or 64KWord for x16 device block).
Data in the page mode can be read out at 45ns cycle time per Word. The I/O pins serve as the ports for
address and command inputs as well as data input/output.
The copy back function allows the optimization of defective blocks management: when a page program
operation fails, the data can be directly programmed in another page inside the same array section
without the time consuming serial data insertion phase.
The cache program feature allows the data insertion in the cache register while the data register is
copied into the Flash array.
This pipelined program operation improves the program throughput when long files are written inside
the memory. A cache read feature is also implemented. This feature allows to dramatically improving
the read throughput when consecutive pages have to be streamed out. This device includes extra
feature: Automatic Read at Power Up.
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TABLE OF CONTENTS
FEATURES ............................................................................................................................................................ 2
GENERAL DESCRIPTION .................................................................................................................................... 3
TABLE OF CONTENTS ......................................................................................................................................... 4
1.
PIN CONFIGURATION ................................................................................................................................... 6
2.
PIN DESCRIPTIONS ...................................................................................................................................... 7
3.
BLOCK DIAGRAM .......................................................................................................................................... 8
4.
OPERATION DESCRIPTION ....................................................................................................................... 12
5.
ELECTRICAL CHARACTERISTICS............................................................................................................. 14
5.1 ABSOLUTE MAXIMUM RATINGS (1) ..................................................................................................... 14
5.2 Recommended Operating Conditions .................................................................................................... 14
5.3 DC CHARACTERISTICs ........................................................................................................................ 15
5.4 Valid Block .............................................................................................................................................. 15
5.5 AC Measurement Condition .................................................................................................................... 16
5.6 AC PIN CAPACITANCE (TA = 25°C, VCC=1.8V, 1MHz) ...................................................................... 16
5.7 Mode Selection ....................................................................................................................................... 16
5.8 ROGRAM/ERASE PERFORMANCne .................................................................................................... 17
5.9 AC CHARACTERISTICS for address/ command/data input .................................................................. 17
5.10 AC CHARACTERISTICS for Operation ................................................................................................ 18
6.
TIMING DIAGRAMS ..................................................................................................................................... 19
6.1 Command Latch Cycle ........................................................................................................................... 19
6.2 Address Latch Cycle ............................................................................................................................... 19
6.3 Input Data Latch Cycle ........................................................................................................................... 20
6.4 Serial Access Cycle after Read (CLE=L, WE#=H, ALE=L) .................................................................... 20
6.5 Serial Access Cycle after Read (EDO Type CLE=L, WE#=H, ALE=L) .................................................. 21
6.6 Status Read Cycle .................................................................................................................................. 21
6.7 Read Operation....................................................................................................................................... 22
6.8 Read Operation (Intercepted by CE#) .................................................................................................... 22
6.9 Random Data Output In a Page ............................................................................................................. 23
6.10 Page program Operation ...................................................................................................................... 23
6.11 Page Program Operation with Random Data Input .............................................................................. 24
6.12 Copy-Back Operation with Random Data InpuT .................................................................................. 24
6.13 Cache Program Operation .................................................................................................................... 25
6.14 Block Erase Operation .......................................................................................................................... 25
6.15 Cache Read Operation ......................................................................................................................... 26
6.16 Read ID Operation ................................................................................................................................ 27
6.17 TWo-plane Page Read Operation with Two-Plane Random Data Out ................................................ 28
6.18 two-plane Cache Read Operation ........................................................................................................ 29
6.19 Two-plane Program Operation ............................................................................................................. 31
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6.20 two-plane Cache Program Operation ................................................................................................... 32
6.21 READ Two Plane Block Erase Operation ............................................................................................. 33
7.
ID Definition Table ........................................................................................................................................ 34
8.
DEVICE OPERATION .................................................................................................................................. 36
8.1 Page READ OPERATION ...................................................................................................................... 36
8.2 Page Program ......................................................................................................................................... 38
8.3 Cache Program ....................................................................................................................................... 39
8.4 Copy-Back Program................................................................................................................................ 40
8.5 Block Erase ............................................................................................................................................. 41
8.6 Read Status ............................................................................................................................................ 41
8.7 Read ID ................................................................................................................................................... 43
8.8 Reset ....................................................................................................................................................... 44
8.9 Cache Read ............................................................................................................................................ 45
8.10 Two-Plane Page Read .......................................................................................................................... 46
8.11 Two-Plane Cache Read ........................................................................................................................ 47
8.12 Two-Plane Page Program .................................................................................................................... 48
8.13 Two-Plane Copy Back Program ........................................................................................................... 49
8.14 Two-Plane Cache Program .................................................................................................................. 51
8.15 Two-Plane Block Erase ........................................................................................................................ 52
8.16 Ready/Busy#......................................................................................................................................... 53
8.17 Data Protection and Power Up Sequence ............................................................................................ 54
8.18 Write Protect Operation ........................................................................................................................ 55
9.
INVALID BLOCK AND ERROR MANAGEMENT ......................................................................................... 57
9.1
Mask Out Initial Invalid Block(s)........................................................................................................... 57
9.2 Identifying Initial Invalid Block(s) and Block Replacement Management ............................................... 57
9.3 ERRor in Read or Write operation .......................................................................................................... 59
9.4 Addressing for PROGRAM operation ..................................................................................................... 64
9.5 System Interface Using CE# NOT Care operation ................................................................................. 65
10.
PACKAGE TYPE INFORMATION ........................................................................................................... 66
10.1 48-Pin TSOP (TYPE I) Package (T) ..................................................................................................... 66
11.
ORDERING INFORMATION – Valid Part Numbers ................................................................................ 67
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1. PIN CONFIGURATION
x16
x8
1
x8
x16
NC
NC
NC
VSS
NC
NC
NC
I/O15
NC
NC
NC
NC
NC
I/O7
NC
I/O14
NC
NC
I/O7
I/O6
NC
NC
I/O6
I/O13
R/B# R/B#
I/O5
I/O5
RE# RE#
I/O4
I/O12
CE# CE#
NC
I/O4
NC
NC
NC
NC
NC
NC
NC
NC
VCC VCC
12
37
VCC
VCC
VSS VSS
13
36
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
CLE CLE
NC
I/O11
ALE ALE
I/O3
I/O3
WE# WE#
I/O2
I/O10
WP# WP#
I/O1
I/O2
NC
NC
I/O0
I/O9
NC
NC
NC
I/O1
NC
NC
NC
I/O8
NC
NC
NC
I/O0
NC
NC
NC
VSS
48-pin TSOP (Type I)
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2. PIN DESCRIPTIONS
Pin Name
Pin Function
DATA INPUTS/OUTPUTS
I/O0 ~ I/O7 (X8)
I/O0 ~ I/O15 (X16) The I/O pins are used to input command, address and data, and to output data
during read operations. The I/O pins float to high-z when the chip is deselected or
when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the internal
command registers. Commands are latched into the command register through the
I/O ports on the rising edge of the WE# signal with CLE high.
ALE
CE#
ADDRESS LATCH ENABLE
The ALE input controls the activating path for addresses sent to the internal
address registers. Addresses are latched into the address register through the I/O
ports on the rising edge of WE# with ALE high.
CHIP ENABLE
The CE# input is the device selection control. When the device is in the Busy state,
CE# high is ignored, and the device does not return to standby mode in program or
erase operation. Regarding CE# control during read operation, refer to ’Page read’
section of Device operation.
RE#
READ ENABLE
The RE# input is the serial data-out control, and when it is active low, it drives the
data onto the I/O bus. Data is valid tREA after the falling edge of RE# which also
increments the internal column address counter by one.
WE#
WRITE ENABLE
The WE# input controls writes to the I/O ports. Commands, address and data are
latched on the rising edge of the WE# pulse.
WP#
WRITE PROTECT
The WP# pin provides inadvertent write/erase protection during power transitions.
The internal high voltage generator is reset when the WP# pin is active low.
R/B#
READY/BUSY OUTPUT
The R/B# output indicates the status of the device operation. When low, it indicates
that a program, erase or random read operation is in progress and returns to high
state upon completion. It is an open drain output and does not float to high-z
condition when the chip is deselected or when outputs are disabled.
VCC
POWER
VCC is the power supply for device.
VSS
GROUND
N.C.
NO CONNECTION
Lead is not internally connected.
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3. BLOCK DIAGRAM
CLE
WP#
RE#
IO Port
ALE
WE#
X-Decoder
High Voltage
Circuit
CE#
Control
Logic
R/B#
IO[7:0]
A12-A29
Address
Counter
A0-A11
Memory Array
( Two Planes for 4Gb)
Page Buffer
Y-Decoder
Data Buffer
Figure 3.1 Functional Block Diagram(x8)
Figure 3.2 Array Organization(x8)
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Table 3.1 ARRAY Address (x8)
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Address
1st cycle
A0
A1
A2
A3
A4
A5
A6
A7
Column Address
2nd
A8
A9
A10
A11
*L
*L
*L
*L
Column Address
3rd cycle
A12
A13
A14
A15
A16
A17
A18
A19
Row Address
4th
cycle
A20
A21
A22
A23
A24
A25
A26
A27
Row Address
5th cycle
A28
A29
*L
*L
*L
*L
*L
*L
Row Address
cycle
Notes:
1. Column Address: Starting Address of the Register.
2. * L must be set to “Low”.
3. The device ignores any additional input of address cycles than required.
4. A30 is Row address for 8G DDP. In case of 4G, A30 must be set to “Low”.
4. A18 is for Plane Address setting.
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CLE
WP#
RE#
IO Port
ALE
WE#
X-Decoder
High Voltage
Circuit
CE#
Control
Logic
R/B#
IO[15:0]
A11-A28
Address
Counter
A0-A10
Memory Array
( Two Planes for 4Gb)
Page Buffer
Y-Decoder
Data Buffer
Figure 3.3 Functional Block Diagram(x16)
Figure 3.4 Array Organization(x8)
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Table 3.2 ARRAY Address (x16)
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Address
1st cycle
A0
A1
A2
A3
A4
A5
A6
A7
Column Address
2nd
A8
A9
A10
*L
*L
*L
*L
*L
Column Address
3rd cycle
A11
A12
A13
A14
A15
A16
A17
A18
Row Address
4th
cycle
A19
A20
A21
A22
A23
A24
A25
A26
Row Address
5th cycle
A27
A28
*L
*L
*L
*L
*L
*L
Row Address
cycle
Notes:
1. Column Address: Starting Address of the Register.
2. *L must be set to “Low”.
3. The device ignores any additional input of address cycles than required.
4. A29 is Row address for 8G DDP. In case of 4G, A29 must be set to "Low"
5. A17 is for Plane Address setting.
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4. OPERATION DESCRIPTION
The IS34/35MW04G084/164 are 4Gbit memory organized as 256K rows (pages) by 2,112x8 columns.
Spare 64x8 columns are located from column address of 2,048~2,111. A 2,112-byte data register is
connected to memory cell arrays accommodating data transfer between the I/O buffers and memory
during page read and page program operations. The program and read operations are executed on a
page basis, while the erase operation is executed on a block basis. The memory array consists of 4,096
separately erasable 128K-byte blocks. It indicates that the bit-by-bit erase operation is prohibited on the
device.
The device has addresses multiplexed into 8 or 16 I/Os. This scheme dramatically reduces pin counts
and allows system upgrades to future densities by maintaining consistency in system board design.
Command, address and data are all written through I/O's by bringing WE# to low while CE# is low. Those
are latched on the rising edge of WE#. Command Latch Enable (CLE) and Address Latch Enable (ALE)
are used to multiplex command and address respectively, via the I/O pins. Some commands require one
bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some
other commands, like page read and block erase and page program, require two cycles: one cycle for
setup and the other cycle for execution.
In addition to the enhanced architecture and interface, the device incorporates copy-back program
feature from one page to another page without need for transporting the data to and from the external
buffer memory.
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Table 4.1 Command Set
1st Cycle
2nd Cycle
Read
00h
30h
Read for Copy-Back
00h
35h
Read ID
90h
-
Reset
FFh
-
Page Program
80h
10h
Copy-Back Program
85h
10h
Block Erase
60h
D0h
85h
-
05h
E0h
Read Status
70h
-
O
Read Status 2
F1h
-
O
60h-60h
30h
60h-60h
35h
00h-05h
E0h
Two-Plane Page Program(2)
80h-11h
81h-10h
Two-Plane Copy-Back Program(2)
85h-11h
81h-10h
Two-Plane Block Erase
60h-60h
D0h
Cache Program
80h
15h
Cache Read
31h
-
Read Start For Last Page Cache Read
3Fh
-
Two-Plane Cache Read(3)
60h-60h
33h
Two-Plane Cache Program (2)
80h-11h
81h-15h
Function
Random Data Input
(1)
Random Data Output
(1)
Two-Plane Read(3)
Two-Plane Read for Copy-Back
Two-Plane Random Data
Output(1) (3)
Acceptable Command during
Busy
O
Notes:
1. Random Data Input/Output can be executed in a page.
2. Any command between 11h and 80h/81h/85h is prohibited except 70h/F1h and FFh.
3. Two-Plane Random Data Output must be used after Two-Plane Read operation or Two-Plane Cache Read operation.
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5. ELECTRICAL CHARACTERISTICS
5.1 ABSOLUTE MAXIMUM RATINGS (1)
Storage Temperature
Input Voltage with Respect to Ground on All Pins
All I/O Voltage with Respect to Ground
VCC
-65°C to +150°C
240°C 3 Seconds
260°C 3 Seconds
-0.6V to +4.6V
-0.6V to VCC + 0.3V( < 4.6V)
-0.6V to +4.6V
Short Circuit Current
Electrostatic Discharge Voltage (Human Body Model)(2)
5mA
-2000V to +2000V
Surface Mount Lead Soldering Temperature
Standard Package
Lead-free Package
Notes:
1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. ANSI/ESDA/JEDEC JS-001
5.2 RECOMMENDED OPERATING CONDITIONS
Part Number
Operating Temperature (Industrial Grade)
Operating Temperature (Extended Grade)
Operating Temperature (Automotive Grade A1)
Operating Temperature (Automotive Grade A2)
VCC Power Supply
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-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
1.7V (VMIN) – 1.95V (VMAX); 1.8V (Typ)
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5.3 DC CHARACTERISTICS
(Under operating range)
Parameter
Page Read
with Serial Access
Operating
Current Program
Erase
Symbol
Test Conditions
Min
Typ.
-
15
tRC=tRCMin,
CE#=VIL, IOUT=0mA
ICC1
ICC2
-
-
15
ICC3
-
-
15
Max
20
Stand-by Current (TTL)
ISB1
CE#=VIH, WP#=0V/VCC
-
-
1
Stand-by Current (CMOS)
ISB2
CE#=VCC-0.2,
WP#=0V/VCC
-
10
50
Unit
mA
Input Leakage Current
ILI
VIN=0 to Vcc (max)
-
-
+/-10
Output Leakage Current
ILO
VOUT=0 to Vcc (max)
-
-
+/-10
Input High Voltage
VIH (1)
0.8xVCC
-
Vcc+0.3
Input Low Voltage, All inputs
VIL (1)
-0.3
-
0.2xVCC
Output High Voltage Level
VOH
IOH=-100 uA
-
-
Output Low Voltage Level
VOL
IOL=+100 uA
-
-
0.1
Output Low Current (R/B#)
IOL
(R/B#)
VOL=0.2V
3
4
-
uA
V
VCC-0.1
mA
Notes:
1. VIL can undershoot to - 2V and VIH can overshoot to VCC + 2V for durations of 20 ns or less.
2. Typical value are measured at Vcc=1.8V, TA=25℃. Not 100% tested.
5.4 VALID BLOCK
Parameter
Symbol
Min
Typ.
Max
Unit
NVB
4,016
-
4,096
Block
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Notes:
1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used.
The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks
that contain one or more bad bits which cause status failure during program and erase operation. Do not erase or program
factory-marked bad blocks. Refer to the attached technical notes for appropriate management of initial invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment and is
guaranteed to be a valid block up to 1K program/erase cycles with 4bit/512Byte ECC.
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5.5 AC MEASUREMENT CONDITION
Symbol
Parameter
CL
Output Load
TR,TF
Input Rise and Fall Times
VIN
Input Pulse Voltages
VREFI
VREFO
Min
Max
Units
1 TTL GATE and CL = 30pF
pF
5
ns
0V to VCC
V
Input Timing Reference Voltages
0.5VCC
V
Output Timing Reference Voltages
0.5VCC
V
Note:
1. Refer to 8.16 Ready/Busy#, R/B#’s Busy to Ready time is decided by pull up register (Rp) tied to R/B# pin.
5.6 AC PIN CAPACITANCE (TA = 25°C, VCC=1.8V, 1MHZ)
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
CIN
Input Capacitance
VIN = 0V
-
-
10
pF
CI/O
Input /Output Capacitance
VI/O = 0V
-
-
10
pF
Note:
1. These parameters are characterized and not 100% tested.
5.7 MODE SELECTION
CLE
ALE
CE#
H
L
L
WE#
RE#
WP#
H
X
Mode
Command Input
Read Mode
L
H
L
H
X
H
L
L
H
H
Address Input (5 clock)
Command Input
Write Mode
L
H
L
H
H
Address Input (5 clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read (Busy)
X
X
X
X
X
H
During Program (Busy)
X
X
X
X
X
H
During Erase (Busy)
X
X(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/VCC(2) Stand-by
Notes :
1. X can be VIL or VIH.
2. WP# should be biased to CMOS high or CMOS low for standby.
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5.8 ROGRAM/ERASE PERFORMANCNE
(Industriall: TA=-40 to 85℃, Automotive, A1: TA=-40 to 85℃, Vcc=1.7V ~ 1.95V)
Parameter
Symbol
tPROG
Min
-
Typ
300
Max
750
Unit
us
tCBSY
-
3
700
us
Nop
-
-
4
cycle
Block Erase Time
tBERS
-
3
10
ms
Dummy Busy Time for Two-Plane Page Program
tDBSY
-
0.5
1
us
Average Program Time
Dummy Busy Time for Cache Operation
Number of Partial Program Cycles in the Same Page
Notes:
1. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 1.8V Vcc
and 25℃ temperature.
2. tPROG is the average program time of all pages. Users should be noted that the program time variation from
page to page is possible.
3. tCBSY max.time depends on timing between internal program completion and data-in.
5.9 AC CHARACTERISTICS FOR ADDRESS/ COMMAND/DATA INPUT
Parameter
CLE Setup Time
CLE Hold Time
CE# Setup Time
CE# Hold Time
WE# Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE# High Hold Time
Address to Data Loading Time
Symbol
tCLS(1)
tCLH
tCS(1)
tCH
tWP
tALS(1)
tALH
tDS(1)
tDH
tWC
tWH
tADL(2)
Min
25
10
35
10
25
25
10
20
10
45
15
100(2)
Max
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note:
1. The transition of the corresponding control pins must occur only once while WE# is held low.
2. tADL is the time from the WE rising edge of final address cycle to the WE# rising edge of first data cycle.
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5.10 AC CHARACTERISTICS FOR OPERATION
Parameter
Symbol
Data Transfer from Cell to Register
tR
ALE to RE# Delay
tAR
CLE to RE# Delay
tCLR
Ready to RE# Low
tRR
RE# Pulse Width
tRP
WE# High to Busy
tWB
WP# Low to WE# Low (disable mode)
tWW
WP# High to WE# Low (enable mode)
Read Cycle Time
tRC
RE# Access Time
tREA
CE# Access Time
tCEA
RE# High to Output Hi-Z
tRHZ
CE# High to Output Hi-Z
tCHZ
CE# High to ALE or CLE Don’t care
tCSD
RE# High to Output Hold
tRHOH
RE# Low to Output Hold
tRLOH
CE# High to Output Hold
tCOH
RE# High Hold Time
tREH
Output Hi-Z to RE# Low
tIR
RE# High to WE# Low
tRHW
WE# High to RE# Low
tWHR
Read
Device
Resetting Program
tRST
Time
Erase
during… Ready
Cache Busy in Read Cache
tDCBSYR
(following 31h and 3Fh)
Min
10
10
20
25
-
Max
25
100
Unit
us
ns
ns
ns
ns
ns
100
-
ns
45
0
15
5
15
15
0
100
60
-
30
45
100
30
5
10
500
5 (1)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
us
us
-
30
us
-
Note: If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us.
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6. TIMING DIAGRAMS
6.1 COMMAND LATCH CYCLE
Figure 6.1 Command Latch Cycle
6.2 ADDRESS LATCH CYCLE
Figure 6.2 Address Latch Cycle
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6.3 INPUT DATA LATCH CYCLE
Figure 6.3 Input Data Latch Cycle
6.4 SERIAL ACCESS CYCLE AFTER READ (CLE=L, WE#=H, ALE=L)
Note:
1.
2.
Dout transition is measured at ±200mV from steady state voltage at I/O with load.
tRHOH starts to be valid when frequency is lower than 33MHz.
Figure 6.4 Serial Access Cycle after Read
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6.5 SERIAL ACCESS CYCLE AFTER READ (EDO TYPE CLE=L, WE#=H, ALE=L)
Note:
1. Transition is measured at +/-200mV from steady state voltage with load.
This parameter is sample and not 100% tested. (tCHZ, tRHZ)
2. tRLOH is valid when frequency is higher than 33MHZ.
tRHOH starts to be valid
Figure 6.5 Serial Access Cycle after Read (EDO Type CLE=L, WE#=H, ALE=L)
6.6 STATUS READ CYCLE
Figure 6.6 Status Read Cycle
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6.7 READ OPERATION
Figure 6.7 Read Operation
6.8 READ OPERATION (INTERCEPTED BY CE#)
Figure 6.8 Read Operation (Intercepted by CE#)
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6.9 RANDOM DATA OUTPUT IN A PAGE
Figure 6.9 Random Data Output in a Page
6.10 PAGE PROGRAM OPERATION
Figure 6.10 Page Program Operation
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6.11 PAGE PROGRAM OPERATION WITH RANDOM DATA INPUT
Note: tADL is the time from the WE# rising edge of final address cycle to the WE# rising edge of the first data cycle.
Figure 6.11 Page Program Operation with Random Data Input
6.12 COPY-BACK OPERATION WITH RANDOM DATA INPUT
Figure 6.12 Copy-Back Operation with Random Data Input
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6.13 CACHE PROGRAM OPERATION
Figure 6.13 Cache Program Operation
6.14 BLOCK ERASE OPERATION
Figure 6.14. Block Erase Operation
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6.15 CACHE READ OPERATION
Figure 6.15.Cache Read Operation
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6.16 READ ID OPERATION
Figure 6.16 Read ID Operation
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6.17 TWO-PLANE PAGE READ OPERATION WITH TWO-PLANE RANDOM DATA OUT
Figure 6.17 Two Plane Page Read Operation with Two-Plane Random Data Out
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6.18 TWO-PLANE CACHE READ OPERATION
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Notes:
1. The column address will be reset to 0 by the 3Fh command input.
2. Cache Read operation is available only within a block.
3. Make sure to terminate the operation with 3Fh command. If the operation is terminated by 31h command, monitor I/O6
(Ready/Busy) by issuing Status Read Command (70h) and make sure the previous page read operation is completed. If
the page read operation is completed, issue FFh reset before next operation.
Figure 6.18 Two-Plane Cache Read Operation
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6.19 TWO-PLANE PROGRAM OPERATION
Figure 6.19 Two-Plane Program Operation
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6.20 TWO-PLANE CACHE PROGRAM OPERATION
Figure 6.20 Two-Plane Cache Program Operation
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6.21 READ TWO PLANE BLOCK ERASE OPERATION
Figure 6.21 Two-Plane Block Erase Operation
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7. ID Definition Table
The device contains ID codes that identify the device type and the manufacturer.
1st Cycle
(Maker Code)
C8h
IS34/35MW04G164(X16)
IS34/35MW04G084 (X8)
C8h
Part No.
1st Byte
2nd Byte
3rd Byte
4th Byte
5th Byte
6th Byte
7th Byte
8th Byte
2nd Cycle
(Device Code)
BCh
3rd Cycle
4th Cycle
5th Cycle
6th ~ 9th Cycle
90h
55h
90h
15h
54h
54h
7Fh
7Fh
ACh
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, etc
Page Size, Block Size, etc
Plane Number, Plane Size, ECC Level
JEDEC Maker Code Continuation Code, 7Fh
JEDEC Maker Code Continuation Code, 7Fh
JEDEC Maker Code Continuation Code, 7Fh
3rd ID Data
Item
Internal Chip Number
Cell Type
Number of
Simultaneously
Programmed Pages
Interleave Program
Between Multiple Chips
Cache Program
Description
1
2
4
8
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
1
2
4
8
Not Support
Support
Not Support
Support
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I/O7
I/O6
I/O5
0
0
1
1
I/O4
I/O3
I/O2
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
34
I/O1
0
0
1
1
I/O0
0
1
0
1
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4th ID Data
Item
Page Size
(w/o redundant area)
Redundant Area Size
(Byte/512Byte)
Block Size
(w/o redundant area)
Organization
Serial Access Time
5th ID Data
Item
ECC Level
Plane Number
Plane Size(without Redundant
Area)
Reserved
6th ~ 8th ID Data
Item
JEDEC Maker Code Continuation
Code
Description
1KB
2KB
4KB
8KB
8
16
64KB
128KB
256KB
512KB
X8
X16
45ns
Reserved
25ns
Reserved
I/O7
Description
4bit/512B
2bit/512B
1bit/512B
Reserved
1
2
4
8
64Kb
128Kb
256Kb
512Kb
1Gb
2Gb
4Gb
8Gb
Reserved
I/O7
Description
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I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
0
0
1
1
I/O0
0
1
0
1
I/O1
0
0
1
1
I/O0
0
1
0
1
0
1
0
0
1
1
0
1
0
1
0
1
0
0
1
1
0
1
0
1
I/O6
I/O5
I/O4
I/O3
I/O2
0
0
1
1
0
1
0
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
0
1
1
1
1
1
1
1
0
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8. DEVICE OPERATION
8.1 PAGE READ OPERATION
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h
command, five-cycle address, and 30h command. After initial power up, the 00h command can be skipped because
it has been latched in the command register. The 2,112Byte of data on a page are transferred to cache registers
via data registers within 25us (tR). Host controller can detect the completion of this data transfer by checking the
R/B# output. Once data in the selected page have been loaded into cache registers, each Byte can be read out in
45ns cycle time by continuously pulsing RE#. The repetitive high-to-low transitions of RE# clock signal make the
device output data starting from the designated column address to the last column address.
The device can output data at a random column address instead of sequential column address by using the
Random Data Output command. Random Data Output command can be executed multiple times in a page.
After power up, device is in read mode so 00h command cycle is not necessary to start a read operation.
A page read sequence is illustrated in Figure below, where column address, page address are placed in between
commands 00h and 30h. After tR read time, the R/B# de-asserts to ready state. Read Status command (70h) can
be issued right after 30h. Host controller can toggle RE# to access data starting with the designated column address
and their successive bytes.
CE#
CLE
ALE
WE#
RE#
tR
R/B#
I/Ox
00h
Address (5cycles)
30h
Data Output( Serial Access)
Col. Add. 1,2 & Row Add. 1,2,3
(00h Command)
Data Field
Spare Field
Read Operation
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RE#
tR
R/B#
00h
I/Ox
Address 5 cycles
30h
Data Output( Serial Access)
Col. Add. 1,2 & Row Add. 1,2,3
1
Data Field
Spare Field
RE#
R/B#
05h
I/Ox
1
Col.1 Col.2
E0h
Data Output( Serial Access)
Col. Add. 1,2
Data Field
Spare Field
Random Page Operation
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8.2 PAGE PROGRAM
The device is programmed based on the unit of a page, and consecutive partial page programming on one page
without intervening erase operation is strictly prohibited. Addressing of page program operations within a block
should be in sequential order. A complete page program cycle consists of a serial data input cycle in which up to
2,112byteof data can be loaded into data register via cache register, followed by a programming period during
which the loaded data are programmed into the designated memory cells.
The serial data input cycle begins with the Serial Data Input command (80h), followed by a five-cycle address
input and then serial data loading. The bytes not to be programmed on the page do not need to be loaded. The
column address for the next data can be changed to the address follows Random Data Input command (85h).
Random Data Input command may be repeated multiple times in a page. The Page Program Confirm command
(10h) starts the programming process. Writing 10h alone without entering data will not initiate the programming
process. The internal write engine automatically executes the corresponding algorithm and controls timing for
programming and verification, thereby freeing the host controller for other tasks. Once the program process starts,
the host controller can detect the completion of a program cycle by monitoring the R/B# output or reading the Status
bit (I/O6) using the Read Status command. Only Read Status and Reset commands are valid during programming.
When the Page Program operation is completed, the host controller can check the Status bit (I/O0) to see if the
Page Program operation is successfully done. The command register remains the Read Status mode unless
another valid command is written to it.
A page program sequence is illustrated in Figure below, where column address, page address, and data input
are placed in between 80h and 10h. After tPROG program time, the R/B# de-asserts to ready state. Read Status
command (70h) can be issued right after 10h.
R/B#
tPROG
“0”
I/Ox
80h
Address & Data Input
10h
70h
I/O0
Pass
Col. Add. 1,2 & Row Add. 1,2,3
Data
“1”
Fail
Program and Read Status Operation
R/B#
I/Ox
tPROG
80h
Address &
Data Input
85h
Col. Add. 1,2 & Row Add. 1,2,3
Data
Address &
Data Input
Col. Add. 1,2
Data
“0”
10h
70h
I/O0
Pass
“1”
Fail
Random Data Input In a Page
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8.3 CACHE PROGRAM
The Cache Program is an extension of Page Program, which is executed with 2,112 byte(x8) or 1,056 words(x16)
data registers, and is available only within a block. Since the device has 1 page of cache memory, serial data input
may be executed while data stored in data register are programmed into memory cell.
After writing the first set of data up to 2,112 bytes(x8) or 1,056 words(x16) into the selected cache registers,
Cache Program command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and
to start internal program operation. To transfer data from cache registers to data registers, the device remains in
Busy state for a short period of time (tCBSY) and has its cache registers ready for the next data-input while the
internal programming gets started with the data loaded into data registers. Read Status command (70h) may be
issued to find out when cache registers become ready by polling the Cache-Busy status bit (I/O6). Pass/fail status
of only the previous page is available upon the return to Ready state. When the next set of data is inputted with the
Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming
of the cache registers is initiated only when the pending program cycle is finished and the data registers are
available for the transfer of data from cache registers. The status bit (I/O5) for internal Ready/Busy may be polled
to identity the completion of internal programming. If the system monitors the progress of programming only with
R/B#, the last page of the target programming sequence must be programmed with actual Page Program command
(10h).
tCBSY
tCBSY
R/B#
I/Ox
80h
Address & Data Input
15h
80h
Col. Add. 1,2 & Row Add. 1,2,3
Data
Address & Data Input
15h
Col. Add. 1,2 & Row Add. 1,2,3
Data
1
Max. 63 times repeatable
tPROG
R/B#
I/Ox
80h
1
Address & Data Input
10h
Col. Add. 1,2 & Row Add. 1,2,3
Data
70h
I/O0
'1'
Fail
'0'
Pass
Last Page Input and Program
NOTE:
1. Since programming the last page does not employ caching, the program time has to be that of Page Program. However,
if the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated
only after completion of the previous cycle, which can be expressed as the following formula.
2. tPROG = Program time for the last page + Program time for the (last-1)th page – (Program command cycle time + Last page
data loading time)
Fast Cache Program (Available only within a Block)
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8.4 COPY-BACK PROGRAM
Copy-Back Program is designed to efficiently copy data stored in memory cells without time-consuming data
reloading when there is no bit error detected in the stored data. The benefit is particularly obvious when a portion
of a block is updated and the rest of the block needs to be copied to a newly assigned empty block. Copy-Back
operation is a sequential execution of Read for Copy-Back and of Copy-Back Program with Destination address. A
Read for Copy-Back operation with “35h” command and the Source address moves the whole 2,112byte data into
the internal buffer. The host controller can detect bit errors by sequentially reading the data output. Copy-Back
Program is initiated by issuing Page-Copy Data-Input command (85h) with Destination address. If data modification
is necessary to correct bit errors and to avoid error propagation, data can be reloaded after the Destination address.
Data modification can be repeated multiple times as shown in Figure below. Actual programming operation begins
when Program Confirm command (10h) is issued. Once the program process starts, the Read Status command
(70h) may be entered to read the status register. The host controller can detect the completion of a program cycle
by monitoring the R/B# output, or the Status bit (I/O6) of the Status Register. When the Copy-Back Program is
complete, the Status Bit (I/O0) may be checked. The command register remains Read Status mode until another
valid command is written to it.
R/B#
I/Ox
tR
00h
Address
5Cycles
35h
tPROG
Data output
Col. Add. 1,2 & Row Add. 1,2,3
Source Address
85h
Address
5Cycles
10h
Col. Add. 1,2 & Row Add. 1,2,3
Destination Address
70h
I/O0
'0'
Pass
'1'
Fail
Page Copy-Back Program Operation
Page Copy-Back Program Operation with Random Data Input
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8.5 BLOCK ERASE
The block-based Erase operation is initiated by an Erase Setup command (60h), followed by a three-cycle row
address, in which only Plane address and Block address are valid while Page address is ignored. The Erase
Confirm command (D0h) following the row address starts the internal erasing process. The two-step command
sequence is designed to prevent memory content from being inadvertently changed by external noise.
At the rising edge of WE# after the Erase Confirm command input, the internal control logic handles erase and
erase-verify. When the erase operation is completed, the host controller can check Status bit (I/O0) to see if the
erase operation is successfully done. Figure below illustrates a block erase sequence, and the address input (the
first page address of the selected block) is placed in between commands 60h and D0h. After tBERS erase time,
the R/B# de-asserts to ready state. Read Status command (70h) can be issued right after D0h to check the
execution status of erase operation.
tBERS
R/B#
I/Ox
60h
Address Input
D0h
Row Add. 1,2,3
70h
I/O0
'1'
Fail
'0'
Pass
Block Erase Operation
8.6 READ STATUS
A status register on the device is used to check whether program or erase operation is completed and whether
the operation is completed successfully. After writing 70h/F1h command to the command register, a read cycle
outputs the content of the status register to I/O pins on the falling edge of CE# or RE#, whichever occurs last.
These two commands allow the system to poll the progress of each device in multiple memory connections even
when R/B# pins are common-wired. RE# or CE# does not need to toggle for status change.
The command register remains in Read Status mode unless other commands are issued to it. Therefore, if the
status register is read during a random read cycle, a read command (00h) is needed to start read cycles.
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Table 8.1 Status Register Definition for 70h Command
I/O
Page Program Block Erase Cache Program Read
Cache Read
Definition
Pass : 0
Fail : 1
Pass : 0
Fail : 1
I/O 0
Pass/Fail
Pass/Fail
Pass/Fail(N)
NA
NA
I/O 1
NA
NA
Pass/Fail(N-1)
NA
NA
NA
NA
NA
NA
Don’t cared
NA
NA
NA
NA
True
Ready/Busy
NA
NA
NA
NA
True
Ready/Busy
Don’t cared
Don’t cared
Busy : 0
Ready : 1
Busy : 0
Ready : 1
Protected :0
Not Protected : 1
I/O 3
I/O 4
NA
(Pass/Fail,OTP)
NA
NA
I/O 5
NA
NA
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
I/O 7
Write Protect
Write Protect
Write Protect
Write Protect
Write Protect
I/O 2
NA
Note:
1. I/Os defined NA are recommended to be masked out when Read Status is being executed.
2. N = current page, N-1 = previous page.
Table 8.2 Status Register Definition for F1h Command
I/O
Page Program Block Erase Cache Program
I/O 0
Chip Pass/Fail Chip Pass/Fail
Chip Pass/Fail(N)
Plane0
Pass/Fail
Plane1
Pass/Fail
Plane0
Pass/Fail
Plane1
Pass/Fail
I/O 3
NA
NA
I/O 4
NA
NA
I/O 5
NA
NA
True Read/Busy
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
I/O 7
Write Protect
Write Protect
Write Protect
I/O 1
I/O 2
Plane0 Pass/Fail(N)
Plane1 Pass/Fail(N)
Plane0 Pass/Fail(N1)
Plane1 Pass/Fail(N1)
Read
Cache Read
Definition
Pass : 0
NA
NA
Fail : 1
Pass : 0
NA
NA
Fail : 1
Pass : 0
NA
NA
Fail : 1
Pass : 0
NA
NA
Fail : 1
Pass : 0
NA
NA
Fail : 1
True
Busy : 0
NA
Ready/Busy
Ready : 1
Busy : 0
Ready/Busy Ready/Busy
Ready : 1
Protected :0
Write Protect Write Protect
Not Protected : 1
Note:
3. I/Os defined NA are recommended to be masked out when Read Status is being executed.
4. N = current page, N-1 = previous page.
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8.7 READ ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an
address input of 00h. Five read cycles sequentially output the manufacturer code (C8h), and the device code and
3rd, 4th, 5th cycle ID respectively. The command register remains in Read ID mode until further commands are
issued to it.
Read ID Operation
Table 8.3 ID definition Table
1st Cycle
2nd Cycle
(Maker Code) (Device Code)
IS34/35MW04G084(X8)
C8h
ACh
Part No.
IS34/35MW04G164(X16)
C8h
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BCh
3rd Cycle
4th Cycle
5th Cycle
90h
15h
54h
90h
55h
54h
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8.8 RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy
state during random read, program or erase mode, the reset operation will abort these operations. The contents
of memory cells being altered are no longer valid, as the data will be partially programmed or erased. The
command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when
WP# is high. If the device is already in reset state a new reset command will be accepted by the command
register. The R/B# pin changes to low for tRST after the Reset command is written. Refer to Figure below.
tRST
R/B#
I/Ox
FFh
Reset Operation
Table 8.4 Device Status Table
Operation Mode
After Power-up
After Reset
00h Command is latched
Waiting for next command
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8.9 CACHE READ
Cache Read is an extension of Page Read, and is available only within a block. The normal Page Read
command (00h-30h) is always issued before invoking Cache Read. After issuing the Cache Read
command (31h), read data of the designated page (page N) are transferred from data registers to
cache registers in a short time period of tDCBSYR, and then data of the next page (page N+1) is
transferred to data registers while the data in the cache registers are being read out. Host controller
can retrieve continuous data and achieve fast read performance by iterating Cache Read operation.
The Read Start for Last Page Cache Read command (3Fh) is used to complete data transfer from
memory cells to data registers.
Read Operation with Cache Read
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8.10 TWO-PLANE PAGE READ
The Two-plane Page Read sequence and its restrictions are shown in Figure below. Two-plane
Page Read is initiated by repeating command 60h followed the three address cycles twice, and
only same page of same block can be selected from each plane. Once the data is loaded into the
cache registers, the data output of the first plane can be read out by issuing command 00h with five
address cycles, command 05h with two-cycle column address and finally E0h. The data output of
the second plane can be read out using the identical command sequence.
tR
R/B#
I/Ox
60h
Address
(3 Cycle)
60h
Row Add. 1,2,3
Address
(3 Cycle)
30h
Row Add. 1,2,3
1
Page address: Page M
Page address: Page M
Plane address: Fixed 'Low' Plane address: Fixed 'High'
Block address: Block N
Block address: Block N
R/B#
00h
I/Ox
Address
(5 Cycle)
05h
Col. Add. 1,2 & Row Add. 1,2,3
E0h
Data Output
Col. Add. 1,2
Column address: Valid
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'Low'
Block address: Block N
1
Address
(2 Cycle)
2
R/B#
00h
I/Ox
Address
(5 Cycle)
05h
Col. Add. 1,2 & Row Add. 1,2,3
2
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'High'
Block address: Block N
Address
(2 Cycle)
E0h
Data Output
Col. Add. 1,2
Column address: Valid
Two-Plane Page Read
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8.11 TWO-PLANE CACHE READ
The Two-plane Cache Read sequence is shown in below, only same page of same block can be
selected from each plane. After Read Confirm command (33h), the data are transferred to data
registers within tR. After issuing Cache Read command (31h), read data in the data registers are
transferred to cache registers within a short period of time (tDCBSYR). Once the data are loaded into the
cache registers, the data of both planes can be read out in the same way as the Two-Plane Page Read
operation. The host controller shall use 3Fh instead of 31h to indicate the Two-plane Cache Read
operation for the last target pages.
Two-Plane Cache Read
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8.12 TWO-PLANE PAGE PROGRAM
Two-plane Page Program is an extension of Page Program, and which utilizes the two sets of
2,112-byte data registers to enable simultaneous programming of same page of same block from
each plane.
After writing the first set of data (up to 2,112 bytes) into the selected data registers, Dummy Page
Program command (11h) instead of Page Program command (10h) is input to finish data loading
for the first memory plane. R/B# remains in Busy state for a short period of time (t DBSY). Read
Status (70h) may be issued to find out when the device returns to Ready state by polling the Status
bit I/O6. The second set of data for the other memory plane is loaded after the 81h command and
address sequence. After that, the Page Program command (10h) must be issued to start the
programming process. Refer to Page Program command for the operation of R/B# and Read
Status. The Status bit I/O0 is set to “1” when either page fails. Fig 41 shows the restriction in
addressing with Two-plane Page Program.
Two-Plane Page Program
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8.13 TWO-PLANE COPY BACK PROGRAM
Two-Plane Copy-Back Program is an extension of Copy-Back Program, for a single plane with 2,112 byte data
registers. Since the device is equipped with two memory planes, activating the two sets of 2,112 byte data
registers enables a simultaneous programming of two pages.
tR
R/B#
I/Ox
Address
(3 Cycle)
60h
60h
Row Add. 1,2,3
Address
(3 Cycle)
35h
Row Add. 1,2,3
1
Page address: Page M
Page address: Page M
Plane address: Fixed 'Low' Plane address: Fixed 'High'
Block address: Block N
Block address: Block N
R/B#
Address
(5 Cycle)
00h
I/Ox
Address
(2 Cycle)
05h
Col. Add. 1,2 & Row Add. 1,2,3
Column address: Valid
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'Low'
Block address: Block N
1
Data Output
E0h
Col. Add. 1,2
2
R/B#
Address
(5 Cycle)
00h
I/Ox
Address
(2 Cycle)
05h
Col. Add. 1,2 & Row Add. 1,2,3
Col. Add. 1,2
Column address: Valid
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'High'
Block address: Block N
2
3
tDBSY
tPROG
R/B#
I/Ox
Address
11h
(5 Cycle)
Destination Address
Col. Add. 1,2 & Row Add. 1,2,3 Note
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'Low'
Block address: Block N
85h
3
Address
(5 Cycle)
81h
10h
70h/
F1h
Destination Address
Col. Add. 1,2 & Row Add. 1,2,3
Column address: Fixed 'Low'
Page address: Page M
Plane address: Fixed 'High'
Block address: Block N
Plane0
“0”
I/Ox
“1”
Pass
Fail
Plane1
Data Field
Data Field
Target page
Target page
Source page
1
Data Output
E0h
(1): Two-Plane Read for Copy Back
(2): Two-Plane Random Data Out
(3): Two-Plane Copy Back Program
Source page
3
1
Spare Field
2
3
Spare Field
2
Two-Plane Copy Back Program
Notes:
1. Copy Back Program operation is allowed only within the same memory plane.
2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
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Notes:
1. Copy Back Program operation is allowed only within the same memory plane.
2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
Two-Plane Copy Back Program with Random Data Input
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8.14 TWO-PLANE CACHE PROGRAM
Two-Plane Cache Program
Note: Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
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8.15 TWO-PLANE BLOCK ERASE
Similar to Two-plane Page Program, two symmetric blocks from each plane can be simultaneously
erased by using Two-plane Block Erase command. Following figure illustrates the Two-plane Block
Erase sequence.
Two-Plane Block Erase
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8.16 READY/BUSY#
The device has a R/B# output that provides a hardware method of indicating the completion of a page
program, erase and random read completion. The R/B# pin is normally high but transition to low after
program or erase command is written to the command register or random read is started after address
loading. It returns to high when the internal controller has finished the operation. The pin is an opendrain driver thereby allowing two or more R/B# outputs to be Or-tied. Because pull-up resistor value is
related to tr(R/B#) and current drain during busy (ibusy) , an appropriate value can be obtained with the
following reference chart. Its value can be determined by the following guidance.
Ready/Busy# Pin Electrical Specifications
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8.17 DATA PROTECTION AND POWER UP SEQUENCE
The timing sequence shown in the figure below is necessary for the power-on/off sequence.
The device internal initialization starts after the power supply reaches an appropriate level in the power on
sequence. During the initialization the device R/B# signal indicates the Busy state as shown in the figure below.
In this time period, the acceptable commands are 70h.
The WP# signal is useful for protecting against data corruption at power on/off.
AC Waveforms for Power Transition
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8.18 WRITE PROTECT OPERATION
Enabling WP# during erase and program busy is prohibited. The erase and program operations are enabled and
disabled as follows:
Enable Programming
WE#
I/Ox
80h
10h
WP#
R/B#
tWW (Min. 100 ns)
Note: WP# keeps “High” until programming finish
Disable Programming
WE#
I/Ox
80h
10h
WP#
R/B#
tWW (Min. 100 ns)
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Enable Erasing
WE#
I/Ox
60h
D0h
WP#
R/B#
tWW (Min. 100 ns)
NOTE: WP# keeps “High” until erasing finish
Disable Erasing
WE#
I/Ox
60h
D0h
WP#
R/B#
tWW (Min. 100 ns)
Enable/Disable Programming and Enable Erasing
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9. INVALID BLOCK AND ERROR MANAGEMENT
9.1 MASK OUT INITIAL INVALID BLOCK(S)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not
guaranteed by ISSI. The information regarding the initial invalid block(s) is called the initial invalid block information.
Devices with initial invalid block(s) have the same quality level as devices with all valid blocks and have the same
AC and DC characteristics. An initial invalid block(s) does not affect the performance of valid block(s) because it is
isolated from the bit line and the common source line by a select transistor. The system design must be able to
mask out the initial invalid block(s) via address mapping.
The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase
cycles with 4bit/512Byte ECC.
9.2 IDENTIFYING INITIAL INVALID BLOCK(S) AND BLOCK REPLACEMENT MANAGEMENT
Unpredictable behavior may result from programming or erasing the defective blocks. Figure below illustrates an
algorithm for searching factory-mapped defects, and the algorithm needs to be executed prior to any erase or
program operations.
A host controller has to scan the data at the first byte in the spare area of the first page or second page of each
block from block 0 to the last block using page read command.
Any block where the 1st byte in the spare area of the first or second page does not contain “FFh” is an invalid block.
Do not erase or program factory-marked bad blocks. The host controller must be able to recognize the initial invalid
block information and to create a corresponding table to manage block replacement upon erase or program error
when additional invalid blocks develop with Flash memory usage.
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Check for “FFh” at the first byte in the
spare area of the first page or second
page of each block.
Figure 9.1 Algorithm for Bad Block Scanning
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9.3 ERROR IN READ OR WRITE OPERATION
Within its lifetime, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report
for the actual data. The following possible failure modes should be considered to implement a highly reliable
system. In the case of status read failure after erase or program, block replacement should be done. Because
program status fail during a page program does not affect the data of the other pages in the same block, block
replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the
current target data and copying the rest of the replaced block. In case of Read, ECC must be employed. To improve
the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be
reclaimed by ECC without any block replacement. The additional block failure rate does not include those reclaimed
blocks.
Write
Read
Failure Mode
Erase failure
Program failure
Up to 4 bit failure
Detection and Countermeasure Sequence
Read Status after Erase Block Replacement
Read Status after Program Block Replacement
Verify ECC ECC Correction
Note: Error Correcting Code RS Code or BCH Code etc.
Example: 4bit correction / 512 Byte
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Figure 9.2 Program Flow Chart
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Figure 9.3 Erase Flow Chart
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Figure 9.4 Read Flow Chart
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Block A
1st
~
(n-1) th
n th
An error occurs.
page
1
Block B
1st
~
(n-1) th
n th
Buffer memory of the
controller
2
An error occurs.
page
* Step 1
When an error happens in the nth page of the Block 'A' during erase or program
operation.
* Step 2
Copy the data in the 1st ~ (n-1)th page to the same location of another free
block. (Block 'B')
* Step 3
Then, copy the nth page data of the Block 'A' in the buffer memory to the nth
page of the Block 'B'
* Step 4
Do not erase or program to Block 'A' by creating an 'invalid block' table or
other appropriate scheme.
Figure 9.5 Blcok Replacement
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9.4 ADDRESSING FOR PROGRAM OPERATION
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block
to MSB (most significant bit) pages of the block. Random page address programming is prohibited. In this case,
the definition of LSB page is the LSB among the pages to be programmed. Therefore, LSB page doesn’t need to
be page 0.
Figure 9.6 Addressing for Program Operation
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9.5 SYSTEM INTERFACE USING CE# NOT CARE OPERATION
For an easier system interface, CE# may be inactive during the data-loading or serial access as shown below.
The internal 2,112byte data registers are utilized as separate buffers for this operation and the system design
gets more flexible. In addition, for voice or audio applications that use slow cycle time on the order of μ-seconds,
de-activating CE# during the data-loading and serial access would provide significant savings in power
consumption.
Figure 9.7 Program/Read-Operation with CE# Not-Care Operation
Address Information
Data
Data In/Out
IS34/35MW04G084
(4Gb x8)
IS34/35MW04G164
(4Gb X16)
Address
I/O
Device
I/Ox
Col.
Add1
Col.
Add2
2,112Byte
I/O 0~I/O 7
A0 ~ A7
A8 ~ A11
1,056Word
I/O 0~I/O
15
A0 ~ A7
A8 ~ A10
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Row
Add1
A12 ~
A19
A11 ~
A18
Row
Add2
A20 ~
A27
A19 ~
A26
65
Row
Add3
A28 ~
A29
A27 ~
A28
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10. PACKAGE TYPE INFORMATION
10.1 48-PIN TSOP (TYPE I) PACKAGE (T)
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11. ORDERING INFORMATION – Valid Part Numbers
IS 34 M W 04G 08 4
- T L I
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
E = Industrial (-40°C to +105°C) (Call Factory)
A1 = Automotive Grade (-40°C to +85°C)
A2 = Automotive Grade (-40°C to +105°C) (Call Factory)
PACKAGING CONTENT
L = RoHS compliant
PACKAGE Type (1)
T = 48-pin TSOP (Type I)
Die Revision
Blank = First Gen.
ECC Requirement
4 = 4-bit ECC
Bus Width
08 = x8 NAND
16 = x16 NAND (Call Factory)
Density
04G = 4 Gigabit
VDD
W = 1.8V
Technology
M = Standard NAND (SLC)
Product Family
34 = NAND
35 = Automotive NAND
BASE PART NUMBER
IS = Integrated Silicon Solution Inc.
VDD
Density
Bus
1.8V
4Gb
X8
Temp. Grade
Order Part Number
Package
Industrial
IS34MW04G084-TLI
48-pin TSOP (Type I)
Automotive (A1)
IS35MW04G084-TLA1
48-pin TSOP (Type I)
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