IS39LV512-70VCE

,6/9,6/9,6/9 0ELW0ELW.ELW9ROWRQO\&026)ODVK0HPRU\ FEATURES ‡Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V ‡0HPRU\2UJDQL]DWLRQ - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit) ‡+LJK3HUIRUPDQFH5HDG - 70 ns access time ‡&RVW(IIHFWLYH6HFWRU%ORFN$UFKLWHFWXUH - Uniform 4 Kbyte sectors - Uniform 64 Kbyte blocks (sector group - except IS39LV512) ‡'DWD3ROOLQJDQG7RJJOH%LW)HDWXUHV ‡+DUGZDUH'DWD3URWHFWLRQ ‡$XWRPDWLF(UDVHDQG%\WH3URJUDP %XLOGLQDXWRPDWLFSURJUDPYHUL¿FDWLRQ - Typical 16 μs/byte programming time - Typical 55 ms sector/block/chip erase time ‡/RZ3RZHU&RQVXPSWLRQ - Typical 4 mA active read current - Typical 8 mA program/erase current - Typical 0.1 μA CMOS standby current ‡+LJK3URGXFW(QGXUDQFH - 100,000 program/erase cycles per single sector - Minimum 20 years data retention ‡,QGXVWULDO6WDQGDUG3LQRXWDQG3DFNDJLQJ - 32-pin (8 mm x 14 mm) VSOP - 32-pin PLCC - Optional lead-free (Pb-free) package ‡2SHUDWLRQWHPSHUDWXUHUDQJH - IS39LV040/010/512 0oC~+85oC *(1(5$/'(6&5,37,21 The IS39LV040/010/512 are 4 Mbit / 1 Mbit / 512 Kbit 3.0 Volt-only Flash Memories. These devices are designed to use a single low voltage, range from 2.70 Volt to 3.60 Volt, power supply to perform read, erase and program operations. The 12.0 Volt VPP power supply for program and erase operations are not required. The devices can be programmed in standard EPROM programmers as well. The memory array of IS39LV512 is divided into uniform 4 Kbyte sectors for data or code storage. The memory arrays of IS39LV010/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks (sector group FRQVLVWVRIVL[WHHQDGMDFHQWVHFWRUV7KHVHFWRURUEORFNHUDVHIHDWXUHDOORZVXVHUVWRÀH[LEO\HUDVHDPHPRU\ area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in others. The chip erase feature allows the whole memory array to be erased in one single erase operation. The devices can be programmed on a byte-by-byte basis after performing the erase operation. The devices have a standard microprocessor interface as well as a JEDEC standard pin-out/command set. The program operation is executed by issuing the program command code into command register. The internal control logic automatically handles the programming voltage ramp-up and timing. The erase operation is executed by issuing the chip erase, block, or sector erase command code into command register. The internal control logic automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit functions, the progress or completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or the Toggle Bit on I/O6. The IS39LV040/010/512 are manufactured on pFLASH™’s advanced nonvolatile CMOS technology. The devices are offered in 32-pin VSOP and PLCC packages with 70 ns access time. Integrated Silicon Solution, Inc. — www.issi.com Rev. B 07/29/2015 1 ,6/9,6/9,6/9 A17 NC NC WE# WE# WE# 1 VCC NC NC 2 VCC A16 A16 NC 3 VCC A15 A15 A15 4 A18 A12 A12 I S 3 9 L V 0 4 0 I S 3 9 L V 0 10 A12 I S 3 9 L V 5 12 I S 3 9 L V 0 10 I S 3 9 L V 0 4 0 &211(&7,21',$*5$06 32 31 30 I S 3 9 L V 5 12 I S 3 9 L V 0 10 I S 3 9 L V 0 4 0 I S 3 9 L V 5 12 A7 A7 A7 5 A6 A6 A6 A5 A5 A5 29 A14 A14 A14 6 28 A13 A13 A13 7 27 A8 A8 A8 A9 A9 A4 A4 A4 8 26 A9 A3 A3 A3 9 25 A11 A11 A11 24 OE# OE# OE# A2 A2 A2 10 A1 A1 A1 11 23 A10 A10 A10 A0 A0 A0 12 22 CE# CE# CE# 13 21 I/O7 I/O7 I/O7 IS39LV512 IS39LV010 I/O5 I/O6 I/O5 I/O6 I/O6 I/O4 I/O5 20 I/O4 I/O4 19 I/O3 I/O3 18 I/O3 GND 17 GND I/O2 16 GND 15 I/O2 IS39LV040 I S 3 9 L V 0 10 I/O1 I S 3 9 L V 5 12 14 I/O2 I/O0 I/O1 I/O0 I/O1 I/O0 32-Pin PLCC IS39LV040 IS39LV010 IS39LV512 A11 A9 A8 A13 A14 A17 WE# V CC A18 A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC WE# V CC NC A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC WE# V CC NC NC A15 A12 A7 A6 A5 A4 1 2 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 IS39LV040 OE# A10 CE# I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 32-Pin VSOP Integrated Silicon Solution, Inc. — www.issi.com Rev. B 07/29/2015 2 ,6/9,6/9,6/9 3,1'(6&5,37,216 6