IS41LV16100-50TI

IS41C16100 IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: — 5V ± 10% (IS41C16100) — 3.3V ± 10% (IS41LV16100) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40oC to 85oC ISSI April 2003 ® DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems. These features make the IS41C16100and IS41LV16100 ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications. The IS41C16100 and IS41LV16100 are packaged in a 42-pin 400mil SOJ and 400-mil 50- (44-) pin TSOP (Type II). The lead-free 400mil 50- (44-) option is available too. KEY TIMING PARAMETERS PIN CONFIGURATIONS 50(44)-Pin TSOP (Type II) 42-Pin SOJ Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND -50 50 13 25 20 84 -60 60 15 30 25 104 Unit ns ns ns ns ns VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND Min. EDO Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) PIN DESCRIPTIONS A0-A9 I/O0-15 WE OE RAS UCAS LCAS Vcc GND NC Address Inputs Data Inputs/Outputs Write Enable Output Enable Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Power Ground No Connection Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. IIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 1 IS41C16100 IS41LV16100 FUNCTIONAL BLOCK DIAGRAM ISSI ® OE WE LCAS UCAS CAS CLOCK GENERATOR WE CONTROL LOGICS OE CONTROL LOGIC CAS WE OE RAS RAS CLOCK GENERATOR DATA I/O BUS REFRESH COUNTER DATA I/O BUFFERS ROW DECODER RAS COLUMN DECODERS SENSE AMPLIFIERS I/O0-I/O15 MEMORY ARRAY 1,048,576 x 16 ADDRESS BUFFERS A0-A9 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 TRUTH TABLE Function Standby Read: Word Read: Lower Byte Read: Upper Byte Write: Word (Early Write) Write: Lower Byte (Early Write) Write: Upper Byte (Early Write) Read-Write(1,2) EDO Page-Mode Read(2) 1st Cycle: 2nd Cycle: Any Cycle: 1st Cycle: 2nd Cycle: 1st Cycle: 2nd Cycle: Read(2) Write(1,3) RAS H L L L L L L L L L L L L L L L→H→L L→H→L L H→L LCAS H L L H L L H L H→L H→L L→H H→L H→L H→L H→L L L H L UCAS H L H L L H L L H→L H→L L→H H→L H→L H→L H→L L L H L WE X H H H L L L H→L H H H L L H→L H→L H L X X OE X L L L X X X L→H L L L X X L→H L→H L X X X Address tR/tC X ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL NA/COL NA/NA ROW/COL NA/COL ROW/COL NA/COL ROW/COL ROW/COL ROW/NA X I/O ISSI High-Z DOUT Lower Byte, DOUT Upper Byte, High-Z Lower Byte, High-Z Upper Byte, DOUT DIN Lower Byte, DIN Upper Byte, High-Z Lower Byte, High-Z Upper Byte, DIN DOUT, DIN DOUT DOUT DOUT DIN DIN DOUT, DIN DOUT, DIN DOUT DOUT High-Z High-Z ® EDO Page-Mode Write(1) EDO Page-Mode(1,2) Read-Write Hidden Refresh RAS-Only Refresh CBR Refresh(4) Notes: 1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active). 2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active). 3. EARLY WRITE only. 4. At least one of the two CAS signals must be active (LCAS or UCAS). Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 3 IS41C16100 IS41LV16100 Functional Description The IS41C16100 and IS41LV16100 is a CMOS DRAM optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 16 address bits. These are entered ten bits (A0-A9) at time. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS). RAS is used to latch the first nine bits and CAS is used to latch the latter nine bits. The IS41C16100 and IS41LV16100 has two CAS controls, LCAS and UCAS. The LCAS and UCAS inputs internally generates a CAS signal functioning in an identical manner to the single CAS input on the other 1M x 16 DRAMs. The key difference is that each CAS controls its corresponding I/O tristate logic (in conjunction with OE and WE and RAS). LCAS controls I/O0 through I/O7 and UCAS controls I/O8 through I/O15. The IS41C16100 and IS41LV16100 CAS function is determined by the first CAS (LCAS or UCAS) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IS41C16100 and IS41LV16100 both BYTE READ and BYTE WRITE cycle capabilities. ISSI ® while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 9-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle. Self Refresh Cycle The Self Refresh allows the user a dynamic refresh, data retention mode at the extended refresh period of 128 ms. i.e., 125 µs per row when using distributed CBR refreshes. The feature also allows the user the choice of a fully static, low power data retention mode. The optional Self Refresh feature is initiated by performing a CBR Refresh cycle and holding RAS LOW for the specified tRAS. The Self Refresh mode is terminated by driving RAS HIGH for a minimum time of tRP. This delay allows for the completion of any internal refresh cycles that may be in process at the time of the RAS LOW-to-HIGH transition. If the DRAM controller uses a distributed refresh sequence, a burst refresh is not required upon exiting Self Refresh. However, if the DRAM controller utilizes a RAS-only or burst refresh sequence, all 1,024 rows must be refreshed within the average internal refresh rate, prior to the resumption of normal operation. Memory Cycle A memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOEA are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters. Extended Data Out Page Mode EDO page mode operation permits all 1,024 columns within a selected row to be randomly accessed at a high data rate. In EDO page mode read cycle, the data-out is held to the next CAS cycle’s falling edge, instead of the rising edge. For this reason, the valid data output time in EDO page mode is extended compared with the fast page mode. In the fast page mode, the valid data output time becomes shorter as the CAS cycle time becomes shorter. Therefore, in EDO page mode, the timing margin in read cycle is larger than that of the fast page mode even if the CAS cycle time becomes shorter. In EDO page mode, due to the extended data function, the CAS cycle time can be shorter than in the fast page mode if the timing margin is the same. The EDO page mode allows both read and write operations during one RAS cycle, but the performance is equivalent to that of the fast page mode in that case. Power-On After application of the VCC supply, an initial pause of 200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VCC or be held at a valid VIH to avoid current surges. Write Cycle A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs first. Auto Refresh Cycle To retain data, 1,024 refresh cycles are required in each 16 ms period. There are two ways to refresh the memory. 1. By clocking each of the 1,024 row addresses (A0 through A9) with RAS at least once every 128 ms. Any read, write, readmodify-write or RAS-only cycle refreshes the addressed row. 2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS, 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 ABSOLUTE MAXIMUM RATINGS(1) Symbol VT VCC IOUT PD TA TSTG Parameters Voltage on Any Pin Relative to GND Supply Voltage Output Current Power Dissipation Commercial Operation Temperature Industrial Operationg Temperature Storage Temperature 5V 3.3V 5V 3.3V Rating –1.0 to +7.0 –0.5 to +4.6 –1.0 to +7.0 –0.5 to +4.6 50 1 0 to +70 -40 to +85 –55 to +125 Unit V V mA W °C °C °C ISSI ® Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.) Symbol VCC VIH VIL TA Parameter Supply Voltage Input High Voltage Input Low Voltage Commercial Ambient Temperature Industrial Ambient Temperature 5V 3.3V 5V 3.3V 5V 3.3V Min. 4.5 3.0 2.4 2.0 –1.0 –0.3 0 –40 Typ. 5.0 3.3 — — — — — — Max. 5.5 3.6 VCC + 1.0 VCC + 0.3 0.8 0.8 70 85 Unit V V V °C °C CAPACITANCE(1,2) Symbol CIN1 CIN2 CIO Parameter Input Capacitance: A0-A9 Input Capacitance: RAS, UCAS, LCAS, WE, OE Data Input/Output Capacitance: I/O0-I/O15 Max. 5 7 7 Unit pF pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 5 IS41C16100 IS41LV16100 ELECTRICAL CHARACTERISTICS(1) (Recommended Operating Conditions unless otherwise noted.) Symbol IIL IIO VOH VOL ICC1 Parameter Input Leakage Current Output Leakage Current Output High Voltage Level Output Low Voltage Level Standby Current: TTL Test Condition Any input 0V ≤ VIN ≤ Vcc Other inputs not under test = 0V Output is disabled (Hi-Z) 0V ≤ VOUT ≤ Vcc IOH = –5.0 mA (5V) IOH = –2.0 mA (3.3V) IOL = 4.2 mA (5V) IOL = 2.0 mA (3.3V) RAS, LCAS, UCAS ≥ VIH Commerical 5V 3.3V Industrial 5V 3.3V 5V 3.3V -50 -60 -50 -60 -50 -60 -50 -60 Speed Min. –5 –5 2.4 — — — — — — — — — — — — — — — ISSI Max. 5 5 — 0.4 3 3 4 4 2 2 160 145 90 80 160 145 160 145 µA µA V V mA mA mA mA ® Unit ICC2 ICC3 Standby Current: CMOS Operating Current: Random Read/Write(2,3,4) Average Power Supply Current Operating Current: EDO Page Mode(2,3,4) Average Power Supply Current Refresh Current: RAS-Only(2,3) Average Power Supply Current Refresh Current: CBR(2,3,5) Average Power Supply Current RAS, LCAS, UCAS ≥ VCC – 0.2V RAS, LCAS, UCAS, Address Cycling, tRC = tRC (min.) RAS = VIL, LCAS, UCAS, Cycling tPC = tPC (min.) RAS Cycling, LCAS, UCAS ≥ VIH tRC = tRC (min.) RAS, LCAS, UCAS Cycling tRC = tRC (min.) ICC4 mA ICC5 mA ICC6 mA Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. Dependent on cycle rates. 3. Specified values are obtained with minimum cycle time and the output open. 4. Column-address is changed once each EDO page cycle. 5. Enables on-chip refresh and address counters. 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol t RC t RAC t CAC tAA tRAS t RP tCAS t CP t CSH t RCD tASR t RAH tASC t CAH t AR t RAD t RAL t RPC t RSH t RHCP tCLZ t CRP tOD tOE tOED tOEHC tOEP tOES t RCS t RRH t RCH t WCH t WCR Parameter Random READ or WRITE Cycle Time Access Time from RAS (6, 7) (6, 8, 15) (6) ISSI Min. 84 — — — 50 30 8 (9, 25) (26) ® -50 Max. — 50 13 25 10K — 10K — — 37 — — — — — 25 — — — — — — 15 13 — — — — — — — — — Min. 104 — — — 60 40 10 9 40 14 0 10 0 10 40 12 30 5 10 37 0 5 3 — 20 5 10 5 0 0 0 10 50 -60 Max. — 60 15 30 10K — 10K — — 45 — — — — — 30 — — — — — — 15 15 — — — — — — — — — Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Access Time from CAS RAS Pulse Width RAS Precharge Time CAS Pulse Width CAS Hold Time CAS Precharge Time (21) Access Time from Column-Address 9 38 12 0 8 (20) RAS to CAS Delay Time Row-Address Hold Time (10, 20) Row-Address Setup Time Column-Address Setup Time Column-Address Hold Time 0 8 30 10 25 5 8 37 0 5 3 — 20 5 10 5 0 0 0 8 40 (20) Column-Address Hold Time (referenced to RAS) RAS to Column-Address Delay Time(11) Column-Address to RAS Lead Time RAS to CAS Precharge Time RAS Hold Time (27) RAS Hold Time from CAS Precharge CAS to Output in Low-Z Output Disable Time Output Enable Time (15, 29) (21) CAS to RAS Precharge Time (19, 28, 29) (15, 16) Output Enable Data Delay (Write) OE HIGH Hold Time from CAS HIGH OE HIGH Pulse Width OE LOW to CAS HIGH Setup Time Read Command Setup Time (17, 20) Read Command Hold Time (referenced to RAS)(12) Read Command Hold Time (referenced to CAS)(12, 17, 21) Write Command Hold Time(17, 27) Write Command Hold Time (referenced to RAS)(17) Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 7 IS41C16100 IS41LV16100 AC CHARACTERISTICS (Continued)(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol tWP tWPZ t RWL t CWL tWCS t DHR t ACH tOEH t DS t DH t RWC t RWD t CWD tAWD t PC t RASP t CPA t PRWC t COH tOFF tWHZ t CLCH t CSR t CHR t ORD tREF tREF tT Parameter Write Command Pulse Width (17) ISSI Min. 8 10 13 8 0 39 15 8 0 8 108 64 26 39 20 50 — 56 5 1.6 3 10 5 8 0 — — 1 -50 Max. — — — — — — — — — — — — — — — 100K 30 — — 12 10 — — — — 16 128 50 Min. 10 10 15 10 0 39 15 10 0 10 133 77 32 47 25 60 — 68 5 1.6 3 10 5 10 0 — — 1 -60 Max. — — — — — — — — — — — — — — — 100K 35 — — 15 10 — — — — 16 128 50 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ns ® WE Pulse Widths to Disable Outputs Write Command to RAS Lead Time(17) Write Command to CAS Lead Time Write Command Setup Time (17, 21) (14, 17, 20) Data-in Hold Time (referenced to RAS) Column-Address Setup Time to CAS Precharge during WRITE Cycle OE Hold Time from WE during READ-MODIFY-WRITE cycle(18) Data-In Setup Time(15, 22) Data-In Hold Time(15, 22) READ-MODIFY-WRITE Cycle Time RAS to WE Delay Time during READ-MODIFY-WRITE Cycle(14) CAS to WE Delay Time(14, 20) Column-Address to WE Delay Time(14) EDO Page Mode READ or WRITE Cycle Time(24) RAS Pulse Width in EDO Page Mode Access Time from CAS Precharge EDO Page Mode READ-WRITE Cycle Time(24) Data Output Hold after CAS LOW Output Buffer Turn-Off Delay from CAS or RAS(13,15,19, 29) Output Disable Delay from WE Last CAS going LOW to First CAS returning HIGH(23) CAS Setup Time (CBR REFRESH)(30, 20) CAS Hold Time (CBR REFRESH) (30, 21) (15) OE Setup Time prior to RAS during HIDDEN REFRESH Cycle Auto Refresh Period (1,024 Cycles) Self Refresh Period (1,024 Cycles) Transition Time (Rise or Fall) (2, 3) 8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 AC TEST CONDITIONS Output load: Two TTL Loads and 50 pF (Vcc = 5.0V ±10%) One TTL Load and 50 pF (Vcc = 3.3V ±10%) Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V ±10%); VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V ±10%) Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5V ±10%, 3.3V ±10%) ISSI ® Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs. 3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. If CAS and RAS = VIH, data output is High-Z. 5. If CAS = VIL, data output may contain data from the last valid READ cycle. 6. Measured with a load equivalent to one TTL gate and 50 pF. 7. Assumes that tRCD - tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown. 8. Assumes that tRCD • tRCD (MAX). 9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data output buffer, CAS and RAS must be pulsed for tCP. 10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC. 11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA. 12. Either tRCH or tRRH must be satisfied for a READ cycle. 13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. 14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS • tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD • tRWD (MIN), tAWD • tAWD (MIN) and tCWD • tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle. 15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS. 16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE WRITE or READ-MODIFY-WRITE is not possible. 17. Write command is defined as WE going low. 18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and OE is taken back to LOW after tOEH is met. 19. The I/Os are in open during READ cycles once tOD or tOFF occur. 20. The first χCAS edge to transition LOW. 21. The last χCAS edge to transition HIGH. 22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles. 23. Last falling χCAS edge to first rising χCAS edge. 24. Last rising χCAS edge to next cycle’s last rising χCAS edge. 25. Last rising χCAS edge to first falling χCAS edge. 26. Each χCAS must meet minimum pulse width. 27. Last χCAS to go LOW. 28. I/Os controlled, regardless UCAS and LCAS. 29. The 3 ns minimum is a parameter guaranteed by design. 30. Enables on-chip refresh and address counters. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 9 IS41C16100 IS41LV16100 READ CYCLE ISSI tRC tRAS tRP ® RAS tCSH tCRP tRCD tRSH tCAS tCLCH tRRH UCAS/LCAS tAR tASR tRAD tRAH tRAL tASC tCAH ADDRESS WE Row tRCS Column tRCH Row tAA tRAC tCAC tCLC tOFF(1) I/O Open tOE Valid Data tOD Open OE tOES Undefined Don’t Care Note: 1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. 10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 EARLY WRITE CYCLE (OE = DON'T CARE) ISSI tRC tRAS tRP ® RAS tCSH tCRP tRCD tRSH tCAS tCLCH UCAS/LCAS tAR tASR tRAD tRAH tASC tRAL tCAH tACH ADDRESS Row Column tCWL tRWL tWCR tWCS tWCH tWP Row WE tDHR tDS tDH I/O Valid Data Don’t Care Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 11 IS41C16100 IS41LV16100 READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) ISSI tRWC tRAS tRP ® RAS tCSH tCRP tRCD tRSH tCAS tCLCH UCAS/LCAS tAR tRAD tASR tRAH tASC tCAH tACH tRAL ADDRESS Row tRCS Column tRWD tCWD tAWD Row tCWL tRWL tWP WE tAA tRAC tCAC tCLZ tDS tDH I/O Open tOE Valid DOUT tOD Valid DIN Open tOEH OE Undefined Don’t Care 12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 EDO-PAGE-MODE READ CYCLE ISSI tRASP tRP ® RAS tCSH tCRP tRCD tCAS, tCLCH tCP tPC(1) tCAS, tCLCH tCP tRSH tCAS, tCLCH tCP UCAS/LCAS tAR tRAD tASR tASC tCAH tASC tCAH tASC tRAL tCAH ADDRESS Row tRAH tRCS Column Column Column tRCH Row tRRH WE tAA tRAC tCAC tCLZ tCAC tCOH tAA tCPA tCAC tCLZ tAA tCPA tOFF I/O Open tOE tOES Valid Data Valid Data tOEHC tOD tOES Valid Data tOE Open tOD OE tOEP Undefined Don’t Care Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 13 IS41C16100 IS41LV16100 EDO-PAGE-MODE EARLY-WRITE CYCLE tRASP ISSI tRP tRHCP tCSH tPC tCAS, tCLCH tCP tCAS, tCLCH tCP tRSH tCAS, tCLCH tACH tRAL tCAH ® RAS tCRP tRCD tCP UCAS/LCAS tAR tRAD tASR tASC tACH tCAH tASC tACH tCAH tASC ADDRESS Row tRAH Column tCWL tWCS tWCH tWP Column tCWL tWCS tWCH tWP Column tCWL tWCS tWCH tWP Row WE tWCR tDHR tDS tDH tDS tDH tDS tDH tRWL I/O OE Valid Data Valid Data Valid Data Don’t Care 14 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 ISSI tRASP tRP ® EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles) RAS tCSH tCRP tRCD tCAS, tCLCH tCP tPC / tPRWC(1) tCAS, tCLCH tCP tRSH tCAS, tCLCH tCP UCAS/LCAS tASR tRAH tAR tRAD tASC tRAL tCAH tCAH tASC tCAH tASC ADDRESS Row tRWD tRCS Column tCWL tWP tAWD tCWD Column tCWL tWP tAWD tCWD Column tRWL tCWL tWP tAWD tCWD Row WE tAA tRAC tCAC tCLZ tDH tDS tCAC tCLZ tAA tCPA tDH tDS tCAC tCLZ tAA tCPA tDH tDS I/O Open tOE DOUT DIN tOD tOE DOUT DIN tOD tOE DOUT DIN tOD tOEH Open OE Undefined Don’t Care Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 15 IS41C16100 IS41LV16100 EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY WRITE) ISSI tRASP tRP ® RAS tCSH tPC tCRP tRCD tCAS tCP tCAS tPC tCP tRSH tCAS tCP UCAS/LCAS tASR tRAH tAR tRAD tASC tACH tRAL tCAH tCAH tASC tCAH tASC ADDRESS Row tRCS Column (A) Column (B) tRCH tWCS Column (N) tWCH Row WE tAA tRAC tCAC tCPA tCAC tCOH tAA tWHZ tDS tDH I/O Open tOE Valid Data (A) Valid Data (B) DIN Open OE Don’t Care 16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 AC WAVEFORMS READ CYCLE (With WE-Controlled Disable) ISSI ® RAS tCSH tCRP tRCD tCAS tCP UCAS/LCAS tAR tRAD tASR tRAH tASC tCAH tASC ADDRESS WE Row tRCS Column tRCH tRCS Column tAA tRAC tCAC tCLZ tWHZ tCLZ I/O Open tOE Valid Data Open tOD OE Undefined Don’t Care RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE) tRC tRAS tRP RAS tCRP tRPC UCAS/LCAS tASR tRAH ADDRESS I/O Row Open Row Don’t Care Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 17 IS41C16100 IS41LV16100 CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE) ISSI tRP tRAS tRP tRAS ® RAS tRPC tCP tCHR tCSR tRPC tCSR tCHR UCAS/LCAS I/O Open HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW) tRAS tRP tRAS RAS tCRP tRCD tRSH tCHR UCAS/LCAS tAR tASR tRAD tRAH tASC tRAL tCAH ADDRESS Row Column tAA tRAC tCAC tCLZ tOFF(2) I/O Open tOE tORD Valid Data Open tOD OE Undefined Don’t Care Notes: 1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH. 2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. 18 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 IS41C16100 IS41LV16100 ORDERING INFORMATION : 5V Commercial Range: 0°C to 70°C Speed (ns) Order Part No. 50 60 IS41C16100-50K IS41C16100-50T IS41C16100-60K IS41C16100-60T Package 400-mil SOJ 400-mil TSOP (Type II) 400-mil SOJ 400-mil TSOP (Type II) ISSI ® Industrial Range: -40°C to 85°C Speed (ns) Order Part No. 50 60 IS41C16100-50KI IS41C16100-50TI IS41C16100-60KI IS41C16100-60TI Package 400-mil SOJ 400-mil TSOP (Type II) 400-mil SOJ 400-mil TSOP (Type II) Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03 19 IS41C16100 IS41LV16100 ORDERING INFORMATION : 3.3V Commercial Range: 0°C to 70°C Speed (ns) 50 IS41LV16100-50K IS41LV16100-50T IS41LV16100-50TL IS41LV16100-60K IS41LV16100-60T IS41LV16100-60TL Order Part No. Package 400-mil SOJ 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free 400-mil SOJ 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free ISSI ® 60 Industrial Range: -40°C to 85°C Speed (ns) 50 IS41LV16100-50KI IS41LV16100-50TI IS41LV16100-50TLI IS41LV16100-60KI IS41LV16100-60TI IS41LV16100-60TLI Order Part No. Package 400-mil SOJ 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free 400-mil SOJ 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free 60 20 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. I 04/16/03