IS42S32160C-75BL

IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page – Burst Type: interleaved or linear Power supply Vdd/Vddq +3.3V ± 0.3V LVTTL interface Auto Refresh and Self Refresh Individual byte controlled by DQM0-3 JANUARY 2009 DESCRIPTION: The ISSI's IS42S32160C is a 512Mb Synchronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs signals are registered on the rising edge of the clock input, CLK. The 512Mb SDRAM is internally configured by stacking two 256MB, 16Mx16 devices. Each of the 4M x32 banks is organized as 8192 rows by 512 columns by 32 bits. KEY TIMING PARAMETERS Parameter Clk Cycle Time CAS Latency = 2 CAS Latency = 3 Clk Frequency CAS Latency = 2 CAS Latency = 3 Access Time from Clock CAS Latency = 2 CAS Latency = 3 -6 10 6.0 100 166 6.5 5.4 -75 10 7.5 100 133 6.5 6 Unit ns ns MHz MHz ns ns OPTIONS: • • • • • Die revision: C Configuration(s): 16Mx32 Package(s): 90 Ball BGA (8x13mm) Lead-free package available Temperature Range: Commercial and Industrial ADDRESS TABLE Parameter Configuration Bank Address Pins Autoprecharge Pins Row Addresses Column Addresses Refresh Count 16Mx32 4M x 32 x 4 banks BA0, BA1 A10/AP A0 – A12 A0 – A8 8192 / 64ms Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. Rev. B 01/22/09 1 IS42S32160C FUNCTIONAL BLOCK DIAGRAM 16Mbx16 SDRAM CLK CKE CS RAS CAS WE DQML DQMH 16 2 COMMAND DECODER & CLOCK GENERATOR DATA IN BUFFER 16 MODE REGISTER 13 REFRESH CONTROLLER DQ 0-15 SELF REFRESH CONTROLLER A10 A12 A11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 BA0 BA1 16 DATA OUT BUFFER VDD/VDDQ Vss/VssQ 16 REFRESH COUNTER 8192 8192 8192 8192 ROW DECODER MULTIPLEXER 13 MEMORY CELL ARRAY 13 ROW ADDRESS LATCH 13 ROW ADDRESS BUFFER BANK 0 SENSE AMP I/O GATE COLUMN ADDRESS LATCH 9 512 (x 16) BANK CONTROL LOGIC BURST COUNTER COLUMN ADDRESS BUFFER COLUMN DECODER 9 FUNCTIONAL BLOCK DIAGRAM 16Mbx32 SDRAM CS CLK CKE# Die 01 Command Addresses Die 02 DQ0 –DQ31 2 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C PIN DESCRIPTIONS Symbol Type Description CLK CKE Input Input Clock:CLK is driven by the system clock.All SDRAM input signals are sampled on the positive edge of CLK.CLK also increments the internal burst counter and controls the output registers. Clock Enable:CKE activates(HIGH)and deactivates(LOW) the CLK signal.If CKE goes low synchronously with clock(set-up and hold time same as other inputs),the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the CKE remains low.When all banks are in the idle state,deactivating the clock controls the entry to the Power Down and Self Refresh modes.CKE is synchronous except after the device enters Power Down and Self Refresh modes,where CKE becomes asynchronous until exiting the same mode. The input buffers,including CLK,are disabled during Power Down and Self Refresh modes,providing low standby power. Bank Select:BS0 and BS1 defines to which bank the BankActivate,Read,Write,or BankPrecharge command is being applied. Address Inputs:A0-A12 are sampled during the BankActivate command (row address A0-A12) and Read/Write command (column address A0-A8 with A10 defining Auto Precharge) to select one location in the respective bank.During a Precharge command,A10 is sampled to determine if all banks are to be precharged (A10 =HIGH). The address inputs also provide the op-code during a Mode Register Set . BS0,BS1 Input A0-A12 Input CS# Input Chip Select:CS# enables (sampled LOW) and disables (sampled HIGH) the command decoder.All commands are masked when CS# is sampled HIGH.CS#provides for external bank selection on systems with multiple banks.It is considered part of the command code. Row Address Strobe:The RAS# signal defines the operation commands in conjunction with the CAS# and WE# signals and is latched at the positive edges of CLK.When RAS# and CS# are asserted “LOW”and CAS# is asserted “HIGH,”either the BankActivate command or the Precharge command is selected by the WE#signal.When the WE#is asserted “HIGH,”the BankActivate command is selected and the bank designated by BS is turned on to the active state.When the WE# is asserted “LOW,”the Precharge command is selected and the bank designated by BS is switched to the idle state after the precharge operation. Column Address Strobe:The CAS# signal defines the operation commands in conjunction with the RAS# and WE# signals and is latched at the positive edges of CLK. When RAS# is held “HIGH”and CS#is asserted “LOW,”the column access is started by asserting CAS#”LOW.”Then, the Read or Write command is selected by asserting WE# “LOW”or “HIGH.” Write Enable:The WE# signal defines the operation commands in conjunction with the RAS# and CAS# signals and is latched at the positive edges of CLK.The WE# input is used to select the BankActivate or Precharge command and Read or Write command. Data Input/Output Mask:DQM0-DQM3 are byte specific, nonpersistent I/O buffer controls. The I/O buffers are placed in a high-z state when DQM is sampled HIGH.Input data is masked when DQM is sampled HIGH during a write cycle.Output data is masked (two-clock latency) when DQM is sampled HIGH during a read cycle. DQM3 masks DQ31-DQ24, DQM2 masks DQ23-DQ16, DQM1 masks DQ15-DQ8, and DQM0 masks DQ7-DQ0. RAS# Input CAS# Input WE# Input DQM0-3 Input DQ0-31 Input/ Data I/O:The DQ0-31 input and output data are synchronized with the positive edge of CLK. Output The I/Os are byte-maskable during Reads and Writes. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 1 3 IS42S32160C PIN CONFIGURATION PACKAGE CODE: B 90 BALL FBGA (Top View) (8.00 mm x 13.00 mm Body, 0.8 mm Ball Pitch) 123456789 A B C D E F G H J K L M N P R PIN DESCRIPTIONS A0-A12 A0-A8 BA0, BA1 DQ0 to DQ31 CLK CKE CS RAS CAS 4 Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM0-DQM3 VDD Vss VDDQ VssQ NC Write Enable x32 Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection DQ26 DQ24 VSS VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0 CAS VDD DQ6 DQ1 DQ16 VSSQ DQM2 VDD A0 BA1 CS A1 A11 RAS DQ28 VDDQ VSSQ VSSQ DQ27 DQ25 VSSQ DQ29 DQ30 VDDQ DQ31 VSS DQM3 A4 A7 CLK DQM1 A5 A8 CKE NC NC A3 A6 A12 A9 NC VSS WE DQM0 DQ7 VSSQ DQ5 VDDQ DQ3 VDDQ VDDQ DQ8 VSSQ DQ10 DQ9 VSSQ DQ12 DQ14 DQ11 VDDQ VSSQ DQ13 DQ15 VSS VDDQ VSSQ DQ4 VDD DQ0 DQ2 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C OPERATION MODE Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Truth table shows the operation commands. Truth Table Command BankActivate BankPrecharge PrechargeAll Write (1),(2) State Idle (3) Any Any Active (3) Active (3) Active (3) Active (3) Set Idle Any Active(4) Any Idle Idle Idle (SelfRefresh) CKEn-1 CKE H H H H H H H H H H H H H L H H L L H H X X X X X X X X X X X H L H L L H H X X DQM(6) BS0,1 X X X X X X X X X X X X X X X X X X L H X X X X X X X X X X X X V V X V V V V A10 A12, A11 A9-0 Row address L H L H L H X X Column address (A0 ~A8) Column address (A0 ~A8) CS# RAS# CAS# WE# L L L L L L L L L L H L L H L X H L X H L X X L L L H H H H L H H X L L X H X X H X X H X X H H H L L L L L H H X L L X H X X H X X H X X H L L L L H H L H L X H H X H X X H X X H X X Write and Auto Precharge Read Read and Autoprecharge Mode Register No-Operation Burst Stop Device Deselect AutoRefresh SelfRefresh Entry SelfRefresh Exit OP code X X X X X X X X X X X X X X X X X X X X X X X X Clock Suspend Mode Entry Active Power Down Mode Entry Any(5) Clock Suspend Mode Exit Active Power Down Mode Exit Any (PowerDown) Data Write/Output Enable Active Data Mask/Output Disable Active Note: 1. V =Valid,X =Don ’t care,L =Logic low,H =Logic high 2. CKEn signal is input level when commands are provided. CKEn-1 signal is input level one clock cycle before the commands are provided. 3. These are states of bank designated by BS signal. 4. Device state is 1,2,4,8,and full page burst operation. 5. Power Down Mode can not enter in the burst operation. When this command is asserted in the burst cycle,device state is clock suspend mode. 6. DQM0-3 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 5 IS42S32160C I Commands 1 I ® BankActivate (RAS#=”L”, CAS#=”H”, WE#=”H”, BS =Bank, A0-A12 =Row Address) The BankActivate command activates the idle bank designated by the BS0,1 (Bank Select) signal.By latching the row address on A0 to A12 at the time of this command, the selected row access is initiated.The read or write operation in the same bank can occur after a time delay of tRCD(min.) from the time of bank activation.A subsequent BankActivate command to a different row in the same bank can only be issued after the previous active row has been precharged (refer to the following figure).The minimum time interval between successive BankActivate commands to the same bank is defined by tRC(min.).The SDRAM has four internal banks on the same chip and shares part of the internal circuitry to reduce chip area;therefore it restricts the back-to-back activation of the four banks. tRRD(min.) specifies the minimum time required between activating different banks. After this command is used,the Write command and the Block Write command perform the no mask write operation. T0 CLK ADDRESS Bank A Row Addr. Bank A Col Addr. T1 T2 T3 .............. Tn+3 Tn+4 Tn+5 Tn+6 .............. Bank B Row Addr. Bank A Row Addr. RAS# - CAS# delay (tRCD) RAS#- RAS# delay time (tRRD) R/W A with AutoPrecharge COMMAND Bank A Activate NOP NOP .............. Bank B Activate NOP NOP Bank A Activate RAS# Cycle time (tRC) Auto Precharge Begin :"H" or "L" Bank Activate 2 BankPrecharge command (RAS#=”L”, CAS#=”H”, WE#=”L”, BS =Bank, A10 =”L”) The BankPrecharge command precharges the bank disignated by BS0,1 signal.The precharged bank is switched from the active state to the idle state.This command can be asserted anytime after tRAS(min.) is satisfied from the BankActivate command in the desired bank.The maximum time any bank can be active is specified by tRAS(max.).Therefore,the precharge function must be performed in any active bank within tRAS(max.).At the end of precharge, the precharged bank is still in the idle state and is ready to be activated again. 6 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C 3 PrechargeAll command (RAS#=”L”, CAS#=”H”, WE#=”L”, BS =Don t care, A10 =”H”) The Precharge All command precharges all the four banks simultaneously and can be issued even if all banks are not in the active state. All banks are then switched to the idle state. Read command (RAS#=”H”, CAS#=”L”, WE#=”H”, BS =Bank, A10 =”L”, A0-A8 =Column Address) The Read command is used to read a burst of data on consecutive clock cycles from an active row in an active bank.The bank must be active for at least tRCD(min.) before the Read command is issued.During read bursts, the valid data-out element from the starting column address will be available following the CAS# latency after the issue of the Read command.Each subsequent data- out element will be valid by the next positive clock edge (refer to the following figure).The DQs go into high-impedance at the end of the burst unless other command is initiated. The burst length,burst sequence,and CAS# latency are determined by the mode register which is already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). 4 T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND READ A NOP NOP DOUT A0 NOP NOP NOP NOP NOP NOP CAS# latency=2 t CK2 , DQ- s CAS# latency=3 t CK3 , DQ- s DOUT A1 DOUT A2 DOUT A3 DOUT A0 DOUT A1 DOUT A2 DOUT A3 Burst Read Operation(Burst Length =4,CAS#Latency =2,3) The read data appears on the DQs subject to the values on the DQM inputs two clocks earlier (i.e.DQM latency is two clocks for output buffers). A read burst without the auto precharge function may be interrupted by a subsequent Read or Write command to the same bank or the other active bank before the end of the burst length.It may be interrupted by a BankPrecharge/PrechargeAll command to the same bank too.The interrupt coming from the Read command can occur on any clock cycle following a previous Read command (refer to the following figure). Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 7 IS42S32160C T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND READ A READ B NOP NOP NOP NOP NOP NOP NOP CAS# latency=2 t CK2 , DQ- s CAS# latency=3 t CK3 , DQ- s DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3 DOUT A 0 DOUT B0 DOUT B1 DOUT B2 DOUT B3 Read Interrupted by a Read (Burst Length =4,CAS#Latency =2,3) The DQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes from a Write command.The DQMs must be asserted (HIGH)at least two clocks prior to the Write command to suppress data-out on the DQ pins.To guarantee the DQ pins against I/O contention,a single cycle with high-impedance on the DQ pins must occur between the last read data and the Write command (refer to the following three figures).If the data output of the burst read occurs at the second clock of the burst write,the DQMs must be asserted (HIGH)at least one clock prior to the Write command to avoid internal bus contention. 8 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK DQM COMMAND NOP READ A NOP NOP NOP NOP WRITE B NOP NOP DQ’s DOUT A Must be Hi-Z before the Write Command DINB 0 DINB 1 DINB 2 : "H" or "L" Read to Write Interval (Burst Length = 4,CAS# Latency =3) T0 CLK DQM T1 T2 T3 T4 T5 T6 T7 T8 1 Clk Interval COMMAND NOP NOP BANKA ACTIVAT E NOP READ A WRITEA NOP NOP NOP CAS# latency=2 tCK2, DQs : "H" or "L" DIN A0 DIN A1 DIN A2 DIN A3 Read to Write Interval (Burst Length = 4,CAS# Latency =2) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK DQM COMMAND CAS# latency=2 t CK2 ,tCK2, DQs DQ’s NOP NOP READ A NOP NOP WRITEB NOP NOP NOP DIN B0 DIN B1 DIN B2 DIN B3 : "H" or "L" Read to Write Interval (Burst Length = 4,CAS# Latency =2) A read burst without the auto precharge function may be interrupted by a BankPrecharge/ PrechargeAll command to the same bank.The Figure "Read to Precharge" shows the optimum time that BankPrecharge/PrechargeAll command is issued in different CAS# latency. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 9 IS42S32160C B T0 CLK I T1 T2 T3 T4 T5 T6 T7 T8 Bank, Col A Bank(s ) Bank, Row ® ADDRESS tRP COMMAND READ A NOP NOP NOP Precharge NOP NOP Activate NOP CAS# latency=2 t CK2 , DQ's CAS# latency=3 t CK3 , DQ's DOUT A 0 DOUT A 1 DOUT A 2 DOUT A 3 DOUT A 0 DOUT A 1 DOUT A 2 DOUT A 3 Read to Precharge (CAS#Latency =2,3) 5 Write command (RAS#=”H”, CAS#=”L”, WE#=”L”, BS =Bank, A10 =”L”, A0-A8 =Column Address) The Write command is used to write a burst of data on consecutive clock cycles from an active row in an active bank.The bank must be active for at least tRCD(min.) before the Write command is issued.During write bursts, the first valid data-in element will be registered coincident with the Write command. Subsequent data elements will be registered on each successive positive clock edge (refer to Figure "Burst Write Operation").The DQs remain with high-impedance at the end of the burst unless another command is initiated.The burst length and burst sequence are determined by the mode register,which is already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND NOP WRITEA I NOP NOP NOP NOP NOP NOP NOP DQ0 - DQ3 DIN A 0 DIN A1 DIN A 2 DIN A 3 don’t care The first data element and the write are registered on the same clock edge. Extra data is masked. Burst Write Operation (Burst Length =4,CAS# Latency =2,3) A write burst without the AutoPrecharge function may be interrupted by a subsequent Write, BankPrecharge/ PrechargeAll,or Read command before the end of the burst length. An interrupt coming from Write command can occur on any clock cycle following the previous Write command (refer to the Figure "Write Interrupted by a Write"). 10 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C T0 CLK COMMAND NOP T1 T2 T3 T4 T5 T6 T7 T8 WRITEA WRITEB NOP NOP NOP NOP NOP NOP 1 Clk Interval DQ’s DIN A0 DIN B0 DIN B1 DIN B2 DIN B3 Write Interrupted by a Write (Burst Length =4, CAS# Latency =2,3) The Read command that interrupts a write burst without auto precharge function should be issued one cycle after the clock edge in which the last data-in element is registered. In order to avoid data contention, input data must be removed from the DQs at least one clock cycle before the first read data appears on the outputs (refer to Figure "Write Interrupted by a Read". Once the Read command is registered, the data inputs will be ignored and writes will not be executed. T0 CLK COMMAND T1 T2 T3 T4 T5 T6 T7 T8 NOP WRITEA READ B NOP NOP NOP NOP NOP NOP CAS# latency=2 t CK2 , DQ’s CAS# latency=3 t CK3 , DQ’s DIN A0 don’t care DOUT B0 DOUT B1 DOUT B2 DOUT B3 DIN A0 don’t care don’t care DOUT B0 DOUT B1 DOUT B2 DOUT B3 Input data for the write is masked. DI N Input data must be removed from the DQs at least one clock cycle before the Read data appears on the outputs to avoid data contention. Write Interrupted by a Read (Burst Length =4, CAS# Latency =2,3) The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function should be issued m cycles after the clock edge in which the last data-in element is registered,where m equals tWR/ tCK rounded up to the next whole number. In addition, the DQM signals must be used to mask input data, starting with the clock edge following the last data-in element and ending with the clock edge on which the BankPrecharge/ PrechargeAll command is entered (refer to the Figure "Write to Precharge"). T0 T1 T2 T3 T4 T5 T6 CLK DQM t RP COMMAND WRITE NOP Precharge NOP NOP Activate NOP ADDRESS BANK COL n t WR BANK (S) ROW DQ DIN n D IN n+1 : don't care Note:The DQMs can remain low in this example if the length of the write burst is 1 or 2. Write to Precharge 11 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 IS42S32160C B T0 CLK I T1 T2 T3 T4 T5 T6 T7 T8 Bank, Col A Bank(s ) Bank, Row ® ADDRESS tRP COMMAND READ A NOP NOP NOP Precharge NOP NOP Activate NOP CAS# latency=2 t CK2 , DQ's CAS# latency=3 t CK3 , DQ's DOUT A 0 DOUT A 1 DOUT A 2 DOUT A 3 DOUT A 0 DOUT A 1 DOUT A 2 DOUT A 3 Read to Precharge (CAS#Latency =2,3) 5 Write command (RAS#=”H”, CAS#=”L”, WE#=”L”, BS =Bank, A10 =”L”, A0-A8 =Column Address) The Write command is used to write a burst of data on consecutive clock cycles from an active row in an active bank.The bank must be active for at least tRCD(min.) before the Write command is issued.During write bursts, the first valid data-in element will be registered coincident with the Write command. Subsequent data elements will be registered on each successive positive clock edge (refer to Figure "Burst Write Operation").The DQs remain with high-impedance at the end of the burst unless another command is initiated.The burst length and burst sequence are determined by the mode register,which is already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND NOP WRITEA I NOP NOP NOP NOP NOP NOP NOP DQ0 - DQ3 DIN A 0 DIN A1 DIN A 2 DIN A 3 don’t care The first data element and the write are registered on the same clock edge. Extra data is masked. Burst Write Operation (Burst Length =4,CAS# Latency =2,3) A write burst without the AutoPrecharge function may be interrupted by a subsequent Write, BankPrecharge/ PrechargeAll,or Read command before the end of the burst length. An interrupt coming from Write command can occur on any clock cycle following the previous Write command (refer to the Figure "Write Interrupted by a Write"). 10 Integrated Silicon Solution, Inc. Rev. B 01/22/09 I IS42S32160C I ® (iii) WRITE with Auto Precharge Interrupted by a READ Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out ap- pearing CAS latency later. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. WRITE With Auto Precharge Interrupted by a READ T0 CLK COMMAND BANK n NOP WRITE - AP BANK n NOP READ - AP BANK m NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 NOP Page Active WRITE with Burst of 4 Interrupt Burst, Write-Back t WR - BANK n Precharge t RP - BANK n t RP - BANK m Internal States BANK m Page Active READ with Burst of 4 ADDRESS BANK n, COL a DIN a DIN a+1 BANK m, COL d DOUT d CAS Latency = 3 (BANK m) DOUT d+1 DQ NOTE: 1. DQM is LOW. DON’T CARE (iv) WRITE with Auto Precharge Interrupted by a WRITE Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank n when when registered. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the WRITE to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank m. WRITE With Auto Precharge Interrupted by a WRITE T0 T1 T2 T3 T4 T5 T6 T7 COMMAND BANK n NOP WRITE - AP BANK n NOP WRITE - AP BANK m NOP NOP NOP Page Active WRITE with Burst of 4 Interrupt Burst, Write-Back t WR - BANK n Precharge t RP - BANK n t WR - BANK m Write-Back Internal States BANK m Page Active WRITE with Burst of 4 ADDRESS BANK n, COL a DIN a BANK m, COL d DIN a+1 DIN a+2 DIN d DIN d+1 DIN d+2 DIN d+3 NOTE: 1. DQM is LOW. DON’T CARE Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 13 IS42S32160C 7 Mode Register Set command (RAS# =”L”, CAS# =”L”, WE# =”L”, BS0,1 and A12-A0 =Register Data) The mode register stores the data for controlling the various operating modes of SDRAM. The Mode Register Set command programs the values of CAS# latency, Addressing Mode and Burst Length in the Mode register to make SDRAM useful for a variety of different applications. The default values of the Mode Register after power-up are undefined;therefore this command must be issued at the power-up sequence.The state of pins BS0,1 and A0-A12 in the same cycle is the data written to the mode register.One clock cycle is required to complete the write in the mode register (refer to Figure "Mode Register Set Cycle").The contents of the mode register can be changed using the same command and the clock cycle requirements during operation as long as all banks are in the idle state. T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 tCK2 CKE Clock min. CS# RAS# CAS# WE# Address Key ADDR. DQM DQ Hi-Z tRP Precharge All Mode Register Set Command Any Command Mode Register Set Cycle 14 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C M The mode register is divided into various fields depending on functionality. Address BS0,1 A12-A10 Function RFU* A9 WBL A8 A7 A6 A5 A4 A3 BT A2 A1 A0 Test Mode CAS Latency Burst Length *Note:RFU (Reserved for future use)should stay 0 during MRS cycle. Burst Length Field (A2~A0) This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be 2, 4, 8, or full page. A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 Burst Length 1 2 4 8 Reserved Reserved Reserved Full Page Burst Type Field (A3) The Burst Type can be one of two modes,Interleave Mode or Sequential Mode. A3 0 1 Burst Type Sequential Interleave • Addressing Sequence of Sequential Mode An internal column address is performed by increasing the address from the column address which is input to the device.The internal column address is varied by the Burst Length as shown in the following table. When the value of column address,(n +m),in the table is larger than 255, only the least significant 8 bits are effective. Data n Column Address 0 n 1 n+1 2 n+2 3 n+3 4 n+4 5 n+5 6 n+6 7 n+7 - 255 n+255 256 n 257 n+1 - 2 words: Burst Length 4 words: 8 words: Full Page: Column address is repeated until terminated. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 15 IS42S32160C • Addressing Sequence of Interleave Mode A column access is started in the input column address and is performed by inverting the address bits in the sequence shown in the following table. Data n Data 0 Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 Data 7 A8 A8 A8 A8 A8 A8 A8 A8 A7 A7 A7 A7 A7 A7 A7 A7 A6 A6 A6 A6 A6 A6 A6 A6 Column Address A5 A5 A5 A5 A5 A5 A5 A5 A4 A4 A4 A4 A4 A4 A4 A4 A3 A3 A3 A3 A3 A3 A3 A3 A2 A2 A2 A2 A2# A2# A2# A2# A1 A1 A1# A1# A1 A1 A1# A1# A0 A0# A0 A0# A0 A0# A0 A0# Burst Length 4 words 8 words CAS# Latency Field (A6~A4) This field specifies the number of clock cycles from the assertion of the Read command to the first read data.The minimum whole value of CAS# Latency depends on the frequency of CLK.The minimum whole value satisfying the following formula must be programmed into this field. tCAC(min) 4, CAS# Latency =2,3) T0 CL K COMMAN D T1 T2 T3 T4 T5 T6 T7 T8 NOP WRITE A NOP NOP Burst Stop NOP NOP NOP NOP CAS# latency=2,3 DQ’s DIN A0 DIN A1 DIN A2 don’t care Input Data for the Write is masked. Termination of a Burst Write Operation (Burst Length =X) Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 17 IS42S32160C 10 Device Deselect command (CS# =”H”) The Device Deselect command disables the command decoder so that the RAS#,CAS#,WE# and Address inputs are ignored,regardless of whether the CLK is enabled.This command is similar to the No Operation command. AutoRefresh command (RAS# =”L”, CAS# =”L”, WE# =”H”, CKE =”H”) The AutoRefresh command is used during normal operation of the SDRAM and is analogous to CAS#-beforeRAS#(CBR)Refresh in conventional DRAMs.This command is non-persistent, so it must be issued each time a refresh is required.The addressing is generated by the internal refresh controller.This makes the address bits a “don’t care”during an AutoRefresh command.The internal refresh counter increments automatically on every auto refresh cycle to all of the rows.The refresh operation must be performed 4096 times within 64ms (32ms for Industrial grade). The time required to complete the auto refresh operation is specified by tRC(min.).To provide the AutoRefresh command, all banks need to be in the idle state and the device must not be in power down mode (CKE is high in the previous cycle).This command must be followed by NOPs until the auto refresh operation is completed.The precharge time requirement,tRP(min),must be met before successive auto refresh operations are performed. SelfRefresh Entry command (RAS# =”L”, CAS# =”L”, WE# =”H”, CKE =”L”) The SelfRefresh is another refresh mode available in the SDRAM. It is the preferred refresh mode for data retention and low power operation.Once the SelfRefresh command is registered, all the inputs to the SDRAM become “don't care”with the exception of CKE, which must remain LOW.The refresh addressing and timing is internally generated to reduce power consumption.The SDRAM may remain in SelfRefresh mode for an indefinite period. The SelfRefresh mode is exited by restarting the external clock and then asserting HIGH on CKE (SelfRefresh Exit command). SelfRefresh Exit command (CKE =”H”, CS# =”H”or CKE =”H”, RAS# =”H”,CAS# =”H”, WE# =”H”) This command is used to exit from the SelfRefresh mode. Once this command is registered, NOP or Device Deselect commands must be issued for tRC(min.) because time is required for the completion of any bank currently being internally refreshed. If auto refresh cycles in bursts are performed during normal operation, a burst of 4096 auto refresh cycles should be completed just prior to entering and just after exiting the SelfRefresh mode. Clock Suspend Mode Entry /PowerDown Mode Entry command (CKE =”L”) When the SDRAM is operating the burst cycle, the internal CLK is suspended(masked)from the subsequent cycle by issuing this command (asserting CKE “LOW”). The device operation is held intact while CLK is suspended.On the other hand,when all banks are in the idle state,this command performs entry into the PowerDown mode.All input and output buffers (except the CKE buffer) are turned off in the PowerDown mode. The device may not remain in the Clock Suspend or PowerDown state longer than the refresh period (64ms) since the command does not perform any refresh operations. Clock Suspend Mode Exit /PowerDown Mode Exit command When the internal CLK has been suspended, the operation of the internal CLK is initiated from the subsequent cycle by providing this command (asserting CKE “HIGH”). When the device is in the PowerDown mode, the device exits this mode and all disabled buffers are turned on to the active state. tPDE(min.) is required when the device exits from the PowerDown mode. Any subsequent commands can be issued after one clock cycle from the end of this command. Data Write /Output Enable,Data Mask /Output Disable command (DQM =”L”,”H”) During a write cycle, the DQM signal functions as a Data Mask and can control every word of the input data.During a read cycle, the DQM functions as the controller of output buffers. DQM is also used for device selection, byte selection and bus control in a memory system. 11 12 13 14 15 16 18 Integrated Silicon Solution, Inc. Rev. B 01/22/09 I IS42S32160C ABSOLUTE MAXIMUM RATINGS(1) Symbol VDD VDDQ I Rating Unit V V V V mA W °C °C ® Parameters VI VO ICS PD TOPT TSTG Supply Voltage (with respect to VSS) –0.5 to +4.6 Supply Voltage for Output (with respect to VSSQ) –0.5 to +4.6 Input Voltage (with respect to VSS) –0.5 to VDD+0.5 Output Voltage (with respect to VSSQ) –1.0 to VDDQ+0.5 Short circuit output current 50 Power Dissipation (TA = 25 °C) 1 Operating Temperature Storage Temperature Com. Ind. 0 to +70 -40 to +85 –55 to +150 Notes: 1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC RECOMMENDED OPERATING CONDITIONS Symbol VDD VDDQ VIH VIL Parameter Supply Voltage Supply Voltage for DQ High Level Input Voltage (all Inputs) Low Level Input Voltage (all Inputs) Min. 3.0 3.0 2.0 -0.3 Typ. 3.3 3.3 — — Max. 3.6 3.6 VDD + 0.3 +0.8 Unit V V V V Notes: 1. All voltages are referenced to VSS =0V 2. VIH(overshoot): VIH (max) = VDD + 2V (pulse width ≤ 3ns) 3. VIL(undershoot): VIL (min) = - 2V (pulse width ≤ 3ns) CAPACITANCE CHARACTERISTICS (At TA = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted) Symbol CIN CCLK CI/O Parameter Input Capacitance, address & control pin Input Capacitance, CLK pin Min. 5.0 5.0 Max. 7.0 7.6 12 Unit pF pF pF Data Input/Output Capacitance 8 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 19 IS42S32160C D.C. ELECTRICAL CHARACTERISTICS (RECOMMENDED OPERATING CONDITIONS) Description/ Test Condition Operating Current 1 bank tRC ≥ tRC(min), Outputs Open, Input operation signal one transition per one cycle Precharge Standby Current in power down mode tCK = 15ns, CKE ≤ VIL(max) Precharge Standby Current in power down mode tCK = ∞, CKE ≤ VIL(max) Precharge Standby Current in non-power down mode CKE VIH(min), CS# ≥ VIH(min), tCK = 15ns Precharge Standby Current in non-power down mode CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞ Active Standby Current in power down mode CKE ≤ VIL(max), tCK = 15ns Active Standby Current in power down mode CKE& CLK ≤ VIL(max), tCK = ∞ Active Standby Current in non-power down mode CKE ≥ VIH(min), CS# ≥ VIH(min), tCK = 15ns Active Standby Current in non-power down mode CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞ Operating Current (Burst mode) tCK =tCK(min), Outputs Open, Multi-bank interleave Refresh Current tRC ≥ tRC(min) Self Refresh Current CKE ≤ 0.2V Symbol -6 Max. -75 Unit Note IDD1 IDD2P IDD2PS IDD2N IDD2NS IDD3P IDD3PS IDD3N IDD3NS IDD4 IDD5 IDD6 300 4 4 60 40 6 6 80 50 300 360 1 6 270 4 4 60 40 6 6 80 50 260 320 6 mA 3 3, 4 3 Parameter IIL IOL VOH VOL Description Input Leakage Current (0V ≤ VIN ≤ VDD, All other pins not under test = 0V ) Output Leakage Current (0V ≤ VOUT ≤ VDD, DQ disable ) LVTTL Output "H" Level Voltage ( IOUT = -2mA ) LVTTL Output "L" Level Voltage ( IOUT = 2mA ) Min. -5 -5 2.4 Max. +5 +5 Unit µA µA V Note 0.4 V 20 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C E AC ELECTRICAL CHARACTERISTICS (RECOMMENDED OPERATING CONDITIONS) 5,6,7,8 -6 Symbol A.C. Parameter Min. Max. Min. - 75 Max. Unit Note tRC tRRD tRCD tRP tRAS tCK2 tCK3 tAC2 tAC3 tOH tCH tCL tIS tIH tLZ tHZ tSRX tWR tCCD tMRS Row cycle time (same bank) Row activate to row activate delay (different banks) RAS# to CAS# delay (same bank) Precharge to refresh/row activate command (same bank) Row activate to precharge time (same bank) Clock cycle time CL* = 2 CL* = 3 Access time from CLK (positive edge) Data output hold time Clock high time Clock low time Data/Address/Control Input set-up time Data/Address/Control Input hold time Data output low impedance Data output high impedance Exit SELF REFRESH-to-ACTIVE command Write Recovery Time CAS# to CAS# Delay time Mode Register Set cycle time CL* = 2 CL* = 3 66 12 18 18 42 10 6 6.5 5.4 2.5 2.75 2.75 2 1 1 6 70 2 1 2 120K 70 15 20 20 48 10 7.5 6.5 6 2.5 2.75 2.75 2 1 1 6 70 2 1 2 CLK ns 120K 9 9 9 9 9 9 9 10 10 10 10 9 8 8 9 * CL is CAS# Latency. Note: 1. Stress greater than those listed under “Absolute Maximum Ratings”may cause permanent damage to the device. 2. All voltages are referenced to Vss. 3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and tRC.Input signals are changed one time during tCK. 4. These parameters depend on the output loading.Specified values are obtained with the output open. 5. Power-up sequence is described in Note 11. 6. A.C. Test Conditions Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 21 IS42S32160C LVTTL Interface Reference Level of Output Signals Output Load Input Signal Levels Transition Time (Rise and Fall)of Input Signals Reference Level of Input Signals 1.4V 50 Ω Output 1.4V /1.4V Reference to the Under Output Load 2.4V /0.4V 1ns 1.4V Z0=50 Ω 30pF LVTTL A.C. Test Load Transition times are measured between VIH and VIL.Transition(rise and fall) of input signals are in a fixed slope (1 ns). 8. tHZ defines the time in which the outputs achieve the open circuit condition and are not at reference levels. 9. If clock rising time is longer than 1 ns, (tR /2 -0.5)ns should be added to the parameter. 10. Assumed input rise and fall time tT (tR &tF )= 1 ns If tR or tF is longer than 1 ns,transient time compensation should be considered,i.e.,[(tr +tf)/2 -1 ]ns should be added to the parameter. 11. Power up Sequence Power up must be performed in the following sequence. (i) Power must be applied to VDD and VDDQ (simultaneously) when all input signals are held “NOP”state and both CKE =”H”and DQM =”H.”The CLK signals must be started at the same time (ii) After power-up,a pause of 200µ seconds minimum is required.Then,it is recommended that DQM is held “HIGH”(VDD levels)to ensure DQ output is in high impedence. (iii) All banks must be precharged. (iv) Mode Register Set command must be asserted to initialize the Mode register. (v) A minimum of 2 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of the device. 7. 22 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C I I T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 ® Timing Waveforms AC Parameters for Write Timing (Burst Length=4, CAS# Latency=2) CLK tCH CKE tCL tIS tIS tIH tCK2 Begin Auto Precharge Bank A Begin Auto Precharge Bank B tIS CS# RAS# CAS# WE# -5 , , -7 , x x BS0,1 tIS ADDR. RBx tIH CAx RBx CBx RAy CAy RAz RBy DQM tRCD Hi-Z tRC Ax0 Ax1 Ax2 tDAL Ax3 Bx0 Bx1 Bx2 tIS Bx3 Ay0 tIH Ay1 Ay2 Ay3 tWR tRP tRRD DQ Activate Write with Activate Write with Activate Command Auto Precharge Command Auto Precharge Command Bank A Command Bank B Command Bank A Bank A Bank B Write Command Bank A Precharge Activate Command Command Bank A Bank A Activate Command Bank B Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 23 IS42S32160C AC Parameters for Read Timing (Burst Length=2, CAS# Latency=2) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 tCH tCL CKE tCK2 tIS Begin AutoPrecharge Bank B tIS CS# RAS# tIH tIH CAS# WE# BS0,1 tIH A10 RAx RBx RAy tIS ADD RAx CAx RBx CBx RAy tRRD DQM Hi-Z DQ tRAS tRC tAC2 tLZ tAC2 Ax0 tRCD tHZ Ax1 Bx0 tRP Bx1 t OH Activate Command Bank A Read Command Bank A Activate Command Bank B Read with Auto Precharge Command Bank B Precharge Command Bank A t HZ Activate Command Bank A 24 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Auto Refresh (CBR)(Burst Length=4, CAS# Latency=2) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx ADD RAx CAx DQM tRP tRC tRC DQ Read Command Bank A Ax0 Ax1 Ax2 Ax3 Precharge All Auto Refresh Command Command Auto Refresh Command Activate Command Bank A Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 25 IS42S32160C Power on Sequence and Auto Refresh (CBR) T0 T1 T2 T3 T4 T5 T6 T7 CLK CKE High level is required T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Minimum of 2 Refresh Cycles are required tMRS CS RAS CAS WE BS0, 1 A10 Address Key ADD DQM High Level is Necessary DQ Hi-Z tRP tRC Precharge Inputs Command All Banks must be stable for 200us 1st Auto Refresh Command 2nd Auto Refresh Command Mode Register Set Command Command 26 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C I Self Refresh Entry & Exit Cycle I T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 ® T0 T1 T2 CLK *Note 1 *Note 2 *Note 4 tRC(min) tSRX *Note 5 *Note 6 *Note 7 CKE *Note 3 tPDE tIS CS# RAS# *Note 8 *Note 8 CAS# BS0,1 ADD WE# DQM DQ Hi-Z Hi-Z SelfRefresh Enter SelfRefresh Exit Auto Refresh Note:To Enter SelfRefresh Mode 1. CS#,RAS#&CAS#with CKE should be low at the same clock cycle. 2. After 1 clock cycle,all the inputs including the system clock can be don ’t care except for CKE. 3. The device remains in SelfRefresh mode as long as CKE stays “low”. Once the device enters SelfRefresh mode,minimum tRAS is required before exit from SelfRefresh. To Exit SelfRefresh Mode 1. System clock restart and be stable before returning CKE high. 2. Enable CKE and CKE should be set high for minimum time of tSRX. 3. CS#starts from high. 4. Minimum tRC is required after CKE going high to complete SelfRefresh exit. 5. 8192 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the system uses burst refresh. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 27 IS42S32160C Clock Suspension During Burst Read (Using CKE) (Burst Length=4, CAS# Latency=2) T0 CLK T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx ADD RAx CAx DQM tHZ DQ Hi-Z Ax0 Ax1 Ax2 Ax3 Activate Command Bank A Read Command Bank A Clock Suspend 1 Cycle Clock Suspend 2 Cycle Clock Suspend 3 Cycle Note:CKE to CLK disable/enable =1 clock 28 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C I ( T0 T 1 T 2 T3 T4 T5 T6 T7 T8 T9 I T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 ® Clock Suspension During Burst Read (Using CKE) (Burst Length=4, CAS# Latency=3) CLK tCK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx ADD RAx CAx DQM tHZ DQ Hi-Z Ax0 Ax1 Ax2 Ax3 Activate Command Bank A Read Command Bank A Clock Suspend Clock Suspend 1 Cycle 2 Cycle Clock Suspend 3 Cycle Note:CKE to CLK disable/enable =1 clock Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 29 IS42S32160C Clock Suspension During Burst Write (Using CKE) (Burst Length=4, CAS# Latency=2) ( T0 CLK T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx ADD RAx CAx DQM DQ Hi-Z DAx0 DAx1 DAx2 DAx3 Activate Command Bank A Clock Suspend Clock Suspend 1 Cycle 2 Cycle Clock Suspend 3 Cycle Write Command Bank A Note:CKE to CLK disable/enable =1 clock 30 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C I ( T0 CLK CKE I T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 ® Clock Suspension During Burst Write (Using CKE) (Burst Length=4, CAS# Latency=3) T 1 T2 tCK3 CS# RAS# CAS# WE# BS0,1 A10 RAx ADD RAx CAx DQM DQ Hi-Z DAx0 DAx1 DAx2 DAx3 Activate Command Bank A Clock Suspend Clock Suspend 2 Cycle 1 Cycle Clock Suspend 3 Cycle Write Command Bank A Note:CKE to CLK disable/enable =1 clock Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 31 IS42S32160C Power Down Mode and Clock Mask (Burst Length=4, CAS# Latency=2) T0 CLK T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCK2 CKE t IS tPDE Valid CS# RAS# CAS# WE# BS0,1 A10 RAx ADD RAx CAx DQM t HZ Hi-Z DQ ACTIVE STANDBY Activate Read Command Command Bank A Bank A Power Down Power Down Mode Entry Mode Exit Ax0 Ax1 Ax2 Ax3 PRECHARGE STANDBY Clock Mask Start Clock Mask End Precharge Command Bank A Power Down Mode Entry Power Down Mode Exit Any Command 32 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Random Column Read (Page within same Bank) (Burst Length=4, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE CS# RAS# CAS# WE# BA0,1 A10 RAw RAz ADD RAw CAw CAx CAy RAz CAz DQM DQ Hi-Z Aw0 Aw1 Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Ay3 Az0 Az1 Az2 Az3 Activate Command Bank A Read Command Bank A Read Command Bank A Read Command Bank A Precharge Activate Command Command Bank A Bank A Read Command Bank A Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 33 IS42S32160C Random Column Read (Page within same Bank) (Burst Length=4, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAw RAz ADD RAw CAw CAx CAy RAz CAz DQM DQ Hi-Z Aw0 Aw1 Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Ay3 Az0 Activate Command Bank A Read Command Bank A Read Command Bank A Read Command Bank A Precharge Command Bank A Activate Command Bank A Read Command Bank A 34 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Random Column Write (Page within same Bank) (Burst Length=4, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RBw RBz ADD RBw CBw CBx CBy RBz CBz DQM DQ Hi-Z DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3 DBz0 DBz1 DBz2 DBz3 Activate Command Bank A Write Command Bank A Write Command Bank B Write Command Bank B Precharge Command Bank B Activate Command Bank B Write Command Bank B Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 35 IS42S32160C Random Column Write (Page within same Bank) (Burst Length=4, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RBw RBz ADD RBw CBw CBx CBy RBz CBz DQM Hi-Z DQ DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3 DBz0 DBz1 DBz2 Activate Command Bank A Write Command Bank A Write Command Bank B Write Command Bank B Precharge Command Bank B Activate Command Bank B Write Command Bank B 36 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Random Row Read (Interleaving Banks) (Burst Length=8, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE High CS# RAS# CAS# WE# BS0,1 A10 RBx RAx RBy ADD RBx CBx RAx CAx RBy CBy tRCD DQM tAC3 tRP DQ Hi-Z Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7 By0 Activate Command Bank B Read Command Bank B Activate Command Bank A Read Command Bank A Precharge Command Bank B Activate Command Bank B Read Command Bank B Precharge Command Bank A Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 37 IS42S32160C Random Row Write (Interleaving Banks) (Burst Length=8, CAS# Latency=2) T0 T 1 T2 CLK T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RAy ADD RAx CAx RBx CBx RAy CAy tRCD DQM tWR* t RP tWR* DQ Hi-Z DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3 DAy4 Activate Command Bank A Write Command Bank A Activate Command Bank B Write Command Bank B Precharge Command Bank A Activate Command Bank A Write Command Bank A Precharge Command Bank B * tWR > tWR(min.) 38 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Random Row Write (Interleaving Banks) (Burst Length=8, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RAy ADD RAx CAx RBx CBx RAy CAy tRCD DQM tWR* tRP tWR* DQ Hi-Z DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3 Activate Command Bank A Write Command Bank A Activate Command Bank B Write Command Bank B Precharge Command Bank A Activate Command Bank A Write Command Bank A Precharge Command Bank B * tWR > tWR(min.) Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 39 IS42S32160C Random Row Write (Interleaving Banks) (Burst Length=8, CAS# Latency=2) T0 T 1 T2 CLK T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RAy ADD RAx CAx RBx CBx RAy CAy tRCD DQM tWR* t RP tWR* DQ Hi-Z DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3 DAy4 Activate Command Bank A Write Command Bank A Activate Command Bank B Write Command Bank B Precharge Command Bank A Activate Command Bank A Write Command Bank A Precharge Command Bank B * tWR > tWR(min.) 38 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Read and Write Cycle (Burst Length=4, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx ADD RAx CAx CAy CAz DQM Hi-Z DQ Ax0 Ax1 Ax2 Ax3 DAy0 DAy1 DAy3 Az0 Az1 Az3 Activate Command Bank A Read Command Bank A Write The Write Data Command is Masked with a Bank A Zero Clock Latency Read Command Bank A The Read Data is Masked with a Two Clock Latency Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 41 IS42S32160C Interleaving Column Read Cycle (Burst Length=4, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RAx ADD RAx CAy RAx CBw CBx CBy CAy CBz DQM tRCD tAC2 DQ Hi-Z Ax0 Ax1 Ax2 Ax3 Bw0 Bw1 Bx0 Bx1 By0 By1 Ay0 Ay1 Bz0 Bz1 Bz2 Bz3 Activate Command Bank A Read Command Bank A Activate Command Bank B Read Command Bank B Read Command Bank B Read Command Bank B Read Command Bank A Read Command Bank B Precharge Command Bank A Precharge Command Bank B 42 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Interleaved Column Read Cycle (Burst Length=4, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RBx ADD RAx CAx RBx CBx CBy CBz CAy DQM DQ Hi-Z tRCD tAC3 Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 By0 By1 Bz0 Bz1 Ay0 Ay1 Ay2 Ay3 Activate Command Bank A Read Command Bank A Activate Command Bank B Read Command Bank B Read Command Bank B Read Command Bank B Read Command Bank A Precharge Command Bank B Precharge Command Bank A Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 43 IS42S32160C Interleaved Column Write Cycle (Burst Length=4, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RBw ADD RAx CAx RBw CBw CBx CBy CAy CBz tRCD DQM tRP tRRD t WR tRP DQ Hi-Z DAx0 DAx1 DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy0 DBy1 DAy0 DAy1 DBz0 DBz1 DBz2 DBz3 Activate Command Bank A Write Command Bank A Activate Command Bank B Write Command Bank B Write Command Bank B Write Command Bank B Write Command Bank A Write Command Bank B Precharge Command Bank A Precharge Command Bank B 44 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Interleaved Column Write Cycle (Burst Length=4, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RBw ADD RAx CAx RBw CBw CBx CBy CAy CBz DQM tRCD tRRD > tRRD(min) tWR tRP tWR(min) DQ Hi-Z DAx0 DAx1 DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy0 DBy1 DAy0 DAy1 DBz0 DBz1 DBz2 DBz3 Activate Command Bank A Activate Command Bank B Write Command Bank B Write Command Bank B Write Command Bank B Write Command Bank A Write Command Bank A Write Command Bank B Precharge Command Bank A Precharge Command Bank B Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 45 IS42S32160C Auto Precharge after Read Burst (Burst Length=4, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBy RAz ADD RAx CAx RBx CBx RAy RBy CBy RAz CAz DQM Hi-Z DQ Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3 Ay0 Ay1 Ay2 Ay3 By0 By1 By2 By3 Az0 Az1 Az2 Activate Command Bank A Read Command Bank A Activate Command Bank B Read with Auto Precharge Command Bank B Activate Activate Read with Read with Read with Auto Precharge Command Auto Precharge Command Auto Precharge Bank B Bank A Command Command Command Bank B Bank A Bank A 46 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Auto Precharge after Read Burst (Burst Length=4, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBy ADD RAx CAx RBx CBx CAy RBy CBy DQM Hi-Z DQ Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3 Ay0 Ay1 Ay2 Ay3 By0 By1 By2 By3 Activate Command Bank A Activate Command Bank B Read Command Bank A Read with Auto Precharge Command Bank B Activate Command Bank B Read with Auto Precharge Command Bank A Read with Auto Precharge Command Bank B Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 47 IS42S32160C Auto Precharge after Write Burst (Burst Length=4, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBy RAz ADD RAx CAx RBx CBx CAy RBy CBy RAz CAz DQM DQ Hi-Z DAx0 DAx1 DAx2 DAx3 DBx0 DBx1 DBx2 DBx3 DAy0 DAy1 DAy2 DAy3 DBy0 DBy1 DBy2 DBy3 DAz0 DAz1 DAz2 DAz3 Activate Command Bank A Write Command Bank A Write with Activate Command Auto Precharge Bank B Command Bank B Write with Auto Precharge Command Bank A Write with Write with Activate Activate Command Auto Precharge Command Auto Precharge Bank B Bank A Command Command Bank B Bank A 48 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Auto Precharge after Write Burst (Burst Length=4, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 CKE High CS# RAS# CAS# WE# BS0,1 ‘ A9 RAx RBx RBy ADD RAx CAx RBx CBx CAy RBy CBy DQM DQ Hi-Z DAx0 DAx1 DAx2 DAx3 DBx0 DBx1 DBx2 DBx3 DAy0 DAy1 DAy2 DAy3 DBy0 DBy1 DBy2 DBy3 Activate Command Bank A Activate Command Bank B Write Command Bank A Write with Auto Precharge Command Bank B Write with Auto Precharge Command Bank A Activate Command Bank B Write with Auto Precharge Command Bank B Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 49 IS42S32160C Full Page Read Cycle (Burst Length=Full Page, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBy ADD RAx CAx RBx CBx RBy DQM tRP DQ Hi-Z 1 Ax Ax+1 Ax+2 Ax-2 Ax- Ax Ax+1 Bx Bx+1 B x+2 Bx+3 Bx+4 Bx+5 Bx+6 Activate Command Bank A Read Command Bank A Activate Command Bank B Read Command Full Page burst operation does not Bank B term in ate when the burst length is sat is fied; the burst counter increments and continues The burst counter wraps bursting beginning with the starting address. from the highest order Precharge Command Bank B Activate Command Bank B page address back to zero during this time interval Burst Stop Command 50 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Full Page Read Cycle (Burst Length=Full Page, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBy ADD RAx CAx RBx CBx RBy DQM tRP Hi-Z DQ Ax Ax+1 Ax+2 Ax-2 Ax-1 Ax Ax+1 Bx Bx+1 Bx+2 Bx+3 Bx+4 Bx+5 Activate Command Bank A Read Command Bank A Activate Command Bank B satisfied; the burst counter The burst counter wraps increments and continues from the highest order page address back to zero bursting beginning with the starting address. during this time interval Read Command Full Page burst operation does not Bank B terminate when the burst length is Precharge Command Bank B Activate Command Bank B Burst Stop Command Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 51 IS42S32160C Full Page Write Cycle (Burst Length=Full Page, CAS# Latency=2) T0 CLK T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 t CK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBy ADD RAx CAx RBx CBx RBy DQM DQ Hi-Z DAx DAx+1 DAx+2 DAx+3 DAx-1 DAx DAx+1 DBx DBx+1 DBx+2 DBx+3 DBx+4 DBx+55DBx+6 Activate Command Bank A Write Command Bank A Activate Command Bank B Write Command Bank B Data is ignored Precharge Command Bank B Activate Command Bank B The burst counter wraps from the highest order page address back to zero during this time interval Full Page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address. Burst Stop Command 52 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Full Page Write Cycle (Burst Length=Full Page, CAS# Latency=3) T0 CLK T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCK3 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBy ADD RAx CAx RBx CBx RBy DQM Data is ignored DQ Hi-Z DAx DAx+1 DAx+2 DAx+3 DAx-1 DAx DAx+1 DBx DBx+1 DBx+3 DBx+4 DBx+5 Activate Command Bank A Write Command Bank A Activate Command Bank B Write Command Bank B Precharge Command Bank B Activate Command Bank B The burst counter wraps from the highest order page address back to zero during this time interval Full Page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address. Burst Stop Command Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 53 IS42S32160C Byte Write Operation (Burst Length=4, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx ADD RAx CAx CAy CAz DQM0 DQM1,2,3 DQ0 - DQ7 Ax0 Ax1 Ax2 DAy1 DAy2 Az1 Az2 DQ8 - DQ15 Ax1 Ax2 Ax3 DAy0 DAy1 DAy3 Az1 Az2 Az3 Activate Command Bank A Read Upper 3 Bytes Command are masked Bank A Lower Byte is masked Write Upper 3 Bytes Command are masked Bank A Read Command Bank A Lower Byte is masked Lower Byte is masked 54 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Full Page Random Column Read (Burst Length=Full Page, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBw ADD RAx RBx CAx CBx CAy CBy CAz CBz RBw t RP DQM t RRD DQ tRCD Ax0 Bx0 Ay0 Ay1 By0 By1 Az0 Az1 Az2 Bz0 Bz1 Bz2 Activate Command Bank A Activate Command Bank B Command Bank B Read Command Bank A Read Command Bank A Read Command Bank B Read Command Bank A Read Command Bank B Read Precharge Command Bank B (Precharge Temination) Activate Command Bank B Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 55 IS42S32160C Full Page Random Column Write (Burst Length=Full Page, CAS# Latency=2) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RBw ADD RAx RBx CAx CBx CAy CBy CAz CBz RBw t WR DQM t RP tRRD DQ t RCD DAx0 DBx0 DAy0 DAy1 DBy0 DBy1 DAz0 DAz1 DAz2 DBz0 DBz1 DBz2 Activate Command Bank A Activate Command Bank B Write Command Bank B Write Write Command Command Bank A Bank A Write Command Bank B Write Command Bank A Write Command Bank B Precharge Command Bank B (Precharge Temination) Write Data is masked Activate Command Bank B 56 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C Precharge Termination of a Burst (Burst Length=8 or Full Page, CAS# Latency=2) T0 CLK T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx RAy RAz ADD RAx CAx RAy CAy RAz CAz tWR tRP DQM tRP tRP DQ DAx0 DAx1 DAx2 DAx3 Ay0 Ay1 Ay2 Az0 Az1 Az2 Activate Command Bank A Write Command Bank A Precharge Command Bank A Activate Command Bank A Command Bank A Read Precharge Command Bank A Precharge Termination of a Write Burst. Write data is masked. Activate Command Bank A Command Bank A Read Precharge Command Bank A Precharge Termination of a Read Burst. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 01/22/09 57 IS42S32160C Precharge Termination of a Burst (Burst Length=4,8 or Full Page, CAS# Latency=3) T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK tCK3 CKE High CS# RAS# CAS# WE# BS0,1 RAx A10 RAy RAz ADD RAx CAx RAy CAy RAz t WR DQM t RP tRP DQ DAx0 DAx1 Ay0 Ay1 Ay2 Activate Command Bank A Write Command Bank A Precharge Command Bank A Activate Command Bank A Command Bank A Read Precharge Command Bank A Activate Command Bank A Precharge Termination of a Read Burst Write Data is masked Precharge Termination of a Write Burst 58 Integrated Silicon Solution, Inc. Rev. B 01/22/09 IS42S32160C ORDERING INFORMATION - Vdd = 3.3V Commercial Range: 0°C to 70°C Frequency 133 MHz 166 MHz Speed (ns) 7.5 6.0 Order Part No. IS42S32160C-75BL IS42S32160C-6BL Package 8x13mm BGA, Lead-free 8x13mm BGA, Lead-free Industrial Range: -40°C to 85°C Frequency 133 MHz 166 MHz 166 MHz Speed (ns) 7.5 6.0 6.0 Order Part No. IS42S32160C-75BLI IS42S32160C-6BI IS42S32160C-6BLI Package 8x13mm BGA, Lead-free 8x13mm BGA 8x13mm BGA, Lead-free Integrated Silicon Solution, Inc. Rev. B 01/22/09 59 NOTE : 1. CONTROLLING DIMENSION : MM . 2. Reference document : JEDEC MS-207 Package Outline 08/28/2008