IS43/46DR81280A, IS43/46DR16640A
SEPTEMBER 2011
1Gb (x8, x16) DDR2 SDRAM
FEATURES
Clock frequency up to 400MHz
8 internal banks for concurrent operation
4‐bit prefetch architecture
Programmable CAS Latency: 3, 4, 5, 6 and 7
Programmable Additive Latency: 0, 1, 2, 3, 4, 5
and 6
Write Latency = Read Latency‐1
Programmable Burst Sequence: Sequential or
Interleave
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 7.8 s (8192 cycles/64 ms)
OCD (Off‐Chip Driver Impedance Adjustment)
ODT (On‐Die Termination)
Weak Strength Data‐Output Driver Option
OPTIONS
Bidirectional differential Data Strobe (Single‐
ended data‐strobe is an optional feature)
On‐Chip DLL aligns DQ and DQs transitions with
CK transitions
DQS# can be disabled for single‐ended data
strobe
Read Data Strobe supported (x8 only)
Differential clock inputs CK and CK#
VDD and VDDQ = 1.8V ± 0.1V
PASR (Partial Array Self Refresh)
SSTL_18 interface
tRAS lockout supported
Operating temperature:
Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)
Industrial (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)
Automotive, A1 (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)
Automotive, A2 (TA = ‐40°C to 105°C; TC = ‐40°C to
105°C)
Configuration:
128Mx8 (16M x 8 x 8 banks)
64Mx16 (8M x 16 x 8 banks)
Package:
60‐ball TW‐BGA for x8
84‐ball TW‐BGA for x16
ADDRESS TABLE
Parameter
Row Addressing
Column Addressing
Bank Addressing
Precharge Addressing
128Mx8
A0‐A13
A0‐A9
BA0‐BA2
A10
64Mx16
A0‐A12
A0‐A9
BA0‐BA2
A10
Clock Cycle Timing
Speed Grade
CL‐tRCD‐tRP
tCK (CL=3)
tCK (CL=4)
tCK (CL=5)
tCK (CL=6)
tCK (CL=7)
Frequency (max)
‐37C
DDR2‐533C
4‐4‐4
5
3.75
3.75
3.75
3.75
266
‐3D
DDR2‐667D
5‐5‐5
5
3.75
3
3
3
333
‐25E
DDR2‐800E
6‐6‐6
5
3.75
3
2.5
2.5
400
‐25D
DDR2‐800D
5‐5‐5
5
3.75
2.5
2.5
2.5
400
Units
tCK
ns
ns
ns
ns
ns
MHz
Note: The ‐37C device specification is shown for reference only.
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. D, 08/30/2011
1
IS43/46DR81280A, IS43/46DR16640A
Package Ball‐out and Description
DDR2 SDRAM (128Mx8) TW‐BGA Ball‐out (Top‐View) (8.00mm x 13.65mm Body, 0.8mm pitch)
Symbol
Description
CK, CK#
Input clocks
CKE
Clock enable
CS#
Chip Select
Command control pins
RAS#,CAS#,WE#
A[13:0]
Address
BA[2:0]
Bank Address
DQ[7:0]
I/O
DQS, DQS#
RDQS, RDQS#
Data Strobe
Redundant Data Strobe
DM
Input data mask
VDD
Supply voltage
VSS
Ground
VDDQ
DQ power supply
VSSQ
DQ ground
VREF
Reference voltage
VDDL
DLL power supply
VSSDL
DLL ground
ODT
NC
Notes:
1. Pins B3 and A2 have identical capacitance as pins B7
and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS#
are identical in function and timing to strobe pair DQS &
DQS# and input masking function is disabled.
3. The function of DM or RDQS/RDQS# are enabled by
EMRS command.
4. VDDL and VSSDL are power and ground for the DLL.
On Die Termination Enable
No connect
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Rev. D, 08/30/2011
2
IS43/46DR81280A, IS43/46DR16640A
DDR2 SDRAM (64Mx16) TW‐BGA Ball‐out (Top‐View) (8.00mm x 13.65mm Body, 0.8mm pitch)
1
A
B
C
D
E
F
G
H
J
5
6
7
8
9
DQ14 VSSQ UDM
UDQS VSSQ DQ15
VDDQ DQ9 VDDQ
VDDQ DQ8 VDDQ
DQ12 VSSQ DQ11
DQ10 VSSQ DQ13
NC
VSSQ LDQS VDDQ
VDD
DQ6
NC
VSS
VSSQ LDM
VDDQ DQ1 VDDQ
DQ4
VSSQ DQ3
LDQS VSSQ DQ7
VDDQ DQ0 VDDQ
DQ2
VSSQ DQ5
VDDL VREF
VSS
VSSDL
CK
VDD
CKE
WE
RAS
CK
ODT
BA0
BA1
CAS
CS
A2
A0
BA2
A10/AP A1
VSS
P
R
4
VSSQ UDQS VDDQ
M
N
3
VSS
VDD
K
L
2
VDD
A3
A5
A6
A4
A7
A9
A11
A8
A12
NC
NC
NC
VDD
VSS
Not populated
Symbol
Description
CK, CK#
Input clocks
CKE
Clock enable
CS#
Chip Select
Command control inputs
RAS#,CAS#,WE#
A[12:0]
Address
BA[2:0]
Bank Address
DQ[15:0]
I/O
UDQS, UDQS#
Upper Byte Data Strobe
LDQS, LDQS#
Lower Byte Data Strobe
UDM, LDM
Input data mask
VDD
Supply voltage
VSS
Ground
VDDQ
DQ power supply
VSSQ
DQ ground
VREF
Reference voltage
VDDL
DLL power supply
VSSDL
DLL ground
ODT
NC
Note:
VDDL and VSSDL are power and ground for the DLL.
On Die Termination Enable
No connect
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Rev. D, 08/30/2011
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IS43/46DR81280A, IS43/46DR16640A
Functional Description
Power‐up and Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may
result in undefined operation.
Power‐up and Initialization Sequence
The following sequence is required for Power‐up and Initialization.
1. Either one of the following sequence is required for Power‐up:
A. While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT1 at a LOW state (all other inputs may be
undefined.) The VDD voltage ramp time must be no greater than 200 ms from when VDD ramps from 300 mV to
VDD(Min); and during the VDD voltage ramp, |VDD‐VDDQ| ≥ 0.3 V. Once the ramping of the supply voltages is
complete (when VDDQ crosses VDDQ(Min)), the supply voltage specifications provided in the table Recommended DC
Operating Conditions (SSTL_1.8), prevail.
VDD, VDDL and VDDQ are driven from a single power converter output, AND
VTT is limited to 0.95V max, AND
VREF tracks VDDQ/2, VREF must be within ± 300mV with respect to VDDQ/2 during supply ramp time.
VDDQ ≥ VREF must be met at all times
B. While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT1 at a LOW state (all other inputs may be
undefined, voltage levels at I/Os and outputs must be less than VDDQ during voltage ramp time to avoid DRAM latch‐
up. During the ramping of the supply voltages, VDD ≥ VDDL ≥ VDDQ must be maintained and is applicable to both AC
and DC levels until the ramping of the supply voltages is complete, which is when VDDQ crosses VDDQ min. Once the
ramping of the supply voltages is complete, the supply voltage specifications provided in the table Recommended DC
Operating Conditions (SSTL‐1.8), prevail.
Apply VDD/VDDL before or at the same time as VDDQ.
VDD/VDDL voltage ramp time must be no greater 200 ms from when VDD ramps from 300 mV to VDD(Min) .
Apply VDDQ before or at the same time as VTT.
The VDDQ voltage ramp time from when VDD(Min) is achieved on VDD to the VDDQ(Min) is achieved on VDDQ
must be no greater than 500 ms.
2. Start clock and maintain stable condition.
3. For the minimum of 200 µs after stable power (VDD, VDDL, VDDQ, VREF, and VTT values are in the range of the minimum and
maximum values specified in the table Recommended DC Operating Conditions (SSTL‐1.8)) and stable clock (CK, CK#), then apply
NOP or Deselect and assert a logic HIGH to CKE.
4. Wait minimum of 400 ns then issue a precharge all command. During the 400 ns period, a NOP or Deselect command must be
issued to the DRAM.
5. Issue an EMRS command to EMR(2).
6. Issue an EMRS command to EMR(3).
7. Issue EMRS to enable DLL.
8. Issue a Mode Register Set command for DLL reset.
9. Issue a precharge all command.
10. Issue 2 or more auto‐refresh commands.
11. Issue a MRS command with LOW to A8 to initialize device operation. (i.e. to program operating parameters without resetting
the DLL.)
12. Wait at least 200 clock cycles after step 8 and then execute OCD Calibration (Off Chip Driver impedance adjustment). If OCD
calibration is not used, EMRS Default command (A9=A8=A7=HIGH) followed by EMRS OCD Calibration Mode Exit command
(A9=A8=A7=LOW) must be issued with other operating parameters of EMR(1).
13. The DDR2 SDRAM is now ready for normal operation.
Note:
1. To guarantee ODT off, VREF must be valid and a LOW level must be applied to the ODT pin.
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Rev. D, 08/30/2011
4
IS43/46DR81280A, IS43/46DR16640A
Initialization Sequence after Power‐Up Diagram
Programming the Mode Register and Extended Mode Registers
For application flexibility, burst length, burst type, CAS# latency, DLL reset function, write recovery time (WR) are user defined
variables and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable function, driver impedance,
additive CAS latency, ODT (On Die Termination), single‐ended strobe, and OCD (off chip driver impedance adjustment) are also user
defined variables and must be programmed with an Extended Mode Register Set (EMRS) command. Contents of the Mode Register
(MR) or Extended Mode Registers EMR[1] and EMR[2] can be altered by re‐executing the MRS or EMRS Commands. Even if the user
chooses to modify only a subset of the MR, EMR[1], or EMR[2] variables, all variables within the addressed register must be
redefined when the MRS or EMRS commands are issued. The x16 option does not have A13, so all references to this address can be
ignored for this option.
MRS, EMRS and Reset DLL do not affect memory array contents, which mean re‐initialization including those can be executed at any
time after power‐up without affecting memory array contents.
DDR2 Mode Register (MR) Setting
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls CAS# latency, burst
length, burst sequence, DLL reset, tWR and active power down exit time to make DDR2 SDRAM useful for various applications. The
default value of the mode register is not defined, therefore the mode register must be written after power‐up for proper operation.
The mode register is written by asserting LOW on CS#, RAS#, CAS#, WE#, BA0, BA1, and BA2 while controlling the state of address
pins A0 ‐ A13. The DDR2 SDRAM should be in all bank precharge with CKE already HIGH prior to writing into the mode register. The
mode register set command cycle time (tMRD) is required to complete the write operation to the mode register. The mode register
contents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in
the precharge state. The mode register is divided into various fields depending on functionality. Burst length is defined by A0 ‐ A2
with options of 4 and 8 bit burst lengths. The burst length decodes are compatible with DDR SDRAM. Burst address sequence type is
defined by A3; CAS latency is defined by A4 ‐ A6. The DDR2 doesn’t support half clock latency mode. A7 is used for test mode. A8 is
used for DLL reset. A7 must be set to LOW for normal MRS operation. Write recovery time tWR is defined by A9 ‐ A11. Refer to the
table for specific codes.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. D, 08/30/2011
5
IS43/46DR81280A, IS43/46DR16640A
Mode Register (MR) Diagram
Address
Field
BA2
BA1
BA0
(1)
A13
Mode
Register
0
0
0
0
A12
PD1
A11
A10
WR
A9
A8
DLL
A7
TM
A6
A5
CAS
Latency
A4
A3
BT
A2
A1
A0
Burst
Length
A12
0
1
Active power down exit time
Fast exit (use tXARD)
Slow exit(use tXARDS)
A11
0
0
0
0
1
1
1
1
A10
0
0
1
1
0
0
1
1
A5
0
0
1
1
0
0
1
1
A7
0
1
Mode
Normal
Reserved
CAS Latency
Reserved
Reserved
Reserved
3
4
5
6
7
A4
0
1
0
1
0
1
0
1
Burst Type
Sequential
Interleave
A3
0
1
A2
0
0
(2)
WR(cycles)
Reserved
2
3
4
5
6
7
8
DLL Reset
No
Yes
A8
0
1
A6
0
0
0
0
1
1
1
1
A9
0
1
0
1
0
1
0
1
A1
1
1
A0
0
1
BL
4
8
Notes:
1. A13 is reserved for future use and must be set to 0 when programming the MR.
2. WR(write recovery for autoprecharge) min is determined by tCK max and WR max is determined by tCK min. WR in clock cycles is calculated by dividing tWR (in
ns) by tCK (in ns) and rounding up a non‐integer value to the next integer (WR[cycles] = tWR(ns)/tCK(ns)). The mode register must be programmed to this value.
This is also used with tRP to determine tDAL.
DDR2 Extended Mode Register 1 (EMR[1]) Setting
The extended mode register 1 stores the data for enabling or disabling the DLL, output driver strength, ODT value selection and
additive latency. The default value of the extended mode register is not defined, therefore the extended mode register must be
written after power‐up for proper operation. Extended mode register 1 is written by asserting LOW on CS#, RAS#, CAS#, WE#, BA1,
and BA2, and HIGH on BA0, and controlling pins A0 – A13. The DDR2 SDRAM should be in all bank precharge with CKE already HIGH
prior to writing into the extended mode register. The mode register set command cycle time (tMRD) must be satisfied to complete
the write operation to the extended mode register. Mode register contents can be changed using the same command and clock
cycle requirements during normal operation as long as all banks are in the precharge state. A0 is used for DLL enable or disable. A1 is
used for enabling reduced strength data‐output driver. A3 ‐ A5 determines the additive latency, A2 and A6 are used for ODT value
selection, A7 ‐ A9 are used for OCD control, A10 is used for DQS# disable and A11 is used for RDQS enable.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. D, 08/30/2011
6
IS43/46DR81280A, IS43/46DR16640A
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal
operation after having the DLL disabled. The DLL is automatically disabled when entering self refresh operation and is automatically
re‐enabled upon exit of self refresh operation. Any time the DLL is enabled (and subsequently reset), 200 clock cycles must occur
before a Read command can be issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait
for synchronization to occur may result in a violation of the tAC or tDQSCK parameters.
Extended Mode Register 1(EMR[1]) Diagram
Address
Field
BA2
BA1
BA0
(1)
A13
Mode
Register
0
0
1
0
A12
Qoff
A11
RDQS
A10
DQS#
A9
A8
OCD
Program
A7
A6
Rtt
A5
A4
Additive
Latency
A3
A2
Rtt
A1
D.I.C
A0
DLL
A12
0
1
(2)
A11
0
1
A10
0
1
Qoff
Output buffer enabled
Ouput buffer disabled
RDQS Enable
Disable
Enable
DQS#
Enable
Disable
A9
0
0
0
1
1
A8
0
0
1
0
1
A7
0
1
0
0
1
A5
0
0
0
0
1
1
1
1
A4
0
0
1
1
0
0
1
1
A3
0
1
0
1
0
1
0
1
A1
0
1
A11
(RDQS)
0
0
1
1
A10
(DQS#)
0
1
0
1
Strobe Function Matrix
RDQS/DM RDQS#
DQS
DM
Hi‐Z
DQS
DM
Hi‐Z
DQS
RDQS
RDQS#
DQS
RDQS
Hi‐Z
DQS
DQS#
DQS#
Hi‐Z
DQS#
Hi‐Z
OCD Calibration Program
OCD Calibration mode exit; maintain setting
Drive(1)
Drive(0)
(3)
Adjust mode
(4)
OCD Calibration default
Additive Latency
0
1
2
3
4
5
6
Reserved
Output Drive Impedance Control
Normal Strength (100%)
Reduced strength (60%)
A6
0
0
1
1
A0
0
1
A2
0
1
0
1
Rtt(NOMINAL)
ODT Disabled
75 ohms
150 ohms
50 ohms
DLL enable
Enable
Disable
Notes:
1. A13 is reserved for future use and must be set to 0 when programming the EMR[1].
2. If RDQS is enabled, the DM function is disabled. RDQS is active for reads and don’t care for writes. The x16 option does not support RDQS. This must be set to 0
when programming the EMR[1] for the x16 option.
3. When Adjust mode is issued, AL from previously set value must be applied.
4. After setting to default, OCD calibration mode needs to be exited by setting A9‐A7 to 000.
DDR2 Extended Mode Register 2 (EMR[2]) Setting
The extended mode register 2 controls refresh related features. The default value of the extended mode register 2 is not defined.
Therefore, the extended mode register must be programmed during initialization for proper operation. The extended mode register
2 is written by asserting LOW on CS, RAS, CAS, WE, BA0, BA2, and HIGH on BA1, while controlling pins A0‐A13. The DDR2 SDRAM
should be in all bank precharge state with CKE already HIGH prior to writing into extended mode register 2. The mode register set
command cycle time (tMRD) must be satisfied to complete the write operation to the extended mode register 2. Mode register
contents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in
precharge state.
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Rev. D, 08/30/2011
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IS43/46DR81280A, IS43/46DR16640A
Extended Mode Register 2 (EMR[2]) Diagram
Address
Field
BA2
Mode
Register
0
BA1
1
BA0
0
A13(1)
0
A12(1)
0
A11(1)
0
A10(1)
0
A9(1)
0
A8(1)
0
A7
SRFt
A6(1)
0
A5(1)
0
A4(1)
0
A3(1)
0
A2
A1
A0
PASR(3)
High Temperature Self-Refresh Rate Enable
A7
0
Disable
1
Enable(2)
A2
A1
A0
Partial Array Self Refresh for 8
Banks
0
0
0
Full Array
All combinations
0
0
1
Half Array
000, 001, 010, 011
0
1
0
Quarter Array
000, 001
0
1
1
1/8 array
000
1
0
0
3/4 array
010, 011, 100, 101, 110, 111
1
0
1
Half array
100, 101, 110, 111
1
1
0
Quarter array
110, 111
1
1
1
1/8 array
111
BA[2:0]
Notes:
1. A3‐A6, and A8‐A13 are reserved for future use and must be set to 0 when programming the EMR[2].
2. Only Industrial and Automotive grade devices support the high temperature Self‐Refresh Mode. The controller can set the EMR (2) [A7] bit to enable this self‐
refresh rate if Tc > 85°C while in self‐refresh operation. TOPER may not be violated.
3. If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified address range will be lost if self refresh is entered. Data
integrity will be maintained if tREF conditions are met and no Self Refresh command is issued.
DDR2 Extended Mode Register 3 (EMR[3]) Setting
No function is defined in extended mode register 3. The default value of the extended mode register 3 is not defined. Therefore, the
extended mode register 3 must be programmed during initialization for proper operation.
DDR2 Extended Mode Register 3 (EMR[3]) Diagram
Address Field
BA2 BA1 BA0 A13 A12 A11 A10
A9
A8
A7
A6
A5
Mode Register
0*
1
1
0*
0*
0*
0*
0*
0*
0*
0*
0*
Note: All bits in EMR[3] except BA0 and BA1 are reserved for future use and must be set to 0 when programming the EMR[3].
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Rev. D, 08/30/2011
A4
A3
A2
A1
A0
0*
0*
0*
0*
0*
8
IS43/46DR81280A, IS43/46DR16640A
Truth Tables
Operation or timing that is not specified is illegal, and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
Command Truth Table
Function
(Extended) Mode Register
Refresh (REF)
Self Refresh Entry
CKE
Previous Current
Cycle
Cycle
H
H
H
H
L
H
Sel Refresh Exit
L
H
Single Bank Precharge
Precharge All Banks
Bank Activate
Write
Write with Auto Precharge
Read
Read with Auto Precharge
No Operation (NOP)
Device Deselect
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
X
X
Power Down Entry
H
L
Power Down Exit
L
H
(9)
A10
A9‐A0
Notes
X
X
1, 2
1
1, 8
X
1, 7, 8
CS#
RAS#
CAS#
WE#
BA2‐BA0
An ‐A11
L
L
L
H
L
L
L
L
L
L
L
L
L
H
H
L
H
L
L
L
L
X
H
L
L
L
H
H
H
H
H
X
X
H
X
H
L
L
L
X
H
H
H
H
L
L
L
L
H
X
X
H
X
H
L
H
H
X
H
L
L
H
L
L
H
H
H
X
X
H
X
H
BA
X
X
X
X
X
X
BA
X
BA
BA
BA
BA
BA
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1,4
X
X
X
X
1, 4
Opcode
X
X
X
L
X
H
X
Row Address
L Column
H Column
L Column
H Column
X
X
X
X
1, 2
1
1, 2
1, 2, 3, 10
1, 2, 3, 10
1, 2, 3, 10
1, 2, 3, 10
1
1
Notes:
1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE# and CKE at the rising edge of the clock.
2. Bank addresses BA0, BA1, and BA2 (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
3. Burst reads or writes at BL=4 cannot be terminated or interrupted. See sections "Reads interrupted by a Read" and "Writes interrupted by a Write" for details.
4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh requirements
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
6. “X” means “H or L (but a defined logic level)”
7. Self refresh exit is asynchronous.
8. VREF must be maintained during Self Refresh operation.
9. An refers to the MSBs of addresseses. An=A13 for x8, and An=A12 for x16.
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Rev. D, 08/30/2011
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Clock Enable (CKE) Truth Table
Current State
CKE
(2)
Power Down
Self Refresh
Bank(s) Active
All Banks Idle
Previous Cycle(1)(N‐1)
L
L
L
L
H
H
H
H
Current Cycle(1)(N)
L
H
L
H
L
L
L
H
Command (N)(3)
(3)
Action (N)
RAS#, CAS#, WE#, CS#
X
Maintain Power‐Down
Deselect or NOP
Power Down Exit
X
Maintain Self‐Refresh
Deselect or NOP
Self‐Refresh Exit
Deselect or NOP
Active Power Down Entry
Deselect or NOP
Precharge Power Down Entry
Refresh
Self‐Refresh Entry
Refer to the Command Truth Table
Notes
11, 13, 15
4, 8, 11, 13
11, 15, 16
4, 5, 9, 16
4, 8, 10, 11, 13
4, 8, 10, 11, 13
6, 9, 11, 13
7
Notes:
1. CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N).
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
5. On Self Refresh Exit, DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. Read commands may be issued only
after tXSRD (200 clocks) is satisfied.
6. Self Refresh mode can only be entered from the All Banks Idle state.
7. Must be a legal command as defined in the Command Truth Table.
8. Valid commands for Power Down Entry and Exit are NOP and DESELECT only.
9. Valid commands for Self Refresh Exit are NOP and DESELECT only.
10. Power Down and Self Refresh cannot be entered while Read or Write operations, (Extended) Mode Register Set operations or Precharge operations are in
progress.
11. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to
achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 x tCK + tIH.
12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
13. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the refresh requirements outlined in this
datasheet.
14. CKE must be maintained HIGH while the DDRII SDRAM is in OCD calibration mode.
15. “X” means “Don’t Care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven HIGH or LOW in Power Down if the ODT
function is enabled (Bit A2 or A6 set to “1” in EMR[1] ).
16. VREF must be maintained during Self Refresh operation.
Data Mask (DM) Truth Table
Name (Functional)
Write Enable
Write Inhibit
DM
L
H
DQs
Valid
X
Note
1
1
Note:
1. Used to mask write data, provided coincident with the corresponding data.
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Commands
DESELECT
The DESELECT function (CS# HIGH) prevents new commands from being executed by the DDR2 SDRAM. The DDR2 SDRAM is
effectively deselected. Operations already in progress are not affected. DESELECT is also referred to as COMMAND INHIBIT.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to instruct the selected DDR2 SDRAM to perform a NOP (CS# is LOW; RAS#, CAS#, and
WE# are HIGH). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress
are not affected.
LOAD MODE (LM)
The mode registers are loaded via bank address and address inputs. The bank address balls determine which mode register will be
programmed. See “Mode Register (MR)” in the next section. The LM command can only be issued when all banks are idle, and a
subsequent executable command cannot be issued until tMRD is met.
ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the bank
address inputs determines the bank, and the address inputs select the row. This row will remains active (or open) for accesses until a
PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same
bank.
READ
The READ command is used to initiate a burst read access to an active row. The value on the bank address inputs determine the
bank, and the address provided on address inputs A0–A9 selects the starting column location. The value on input A10 determines
whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row will remain open for subsequent accesses. DDR2 SDRAM also supports the AL
feature, which allows a READ or WRITE command to be issued prior to tRCD(Min) by delaying the actual registration of the
READ/WRITE command to the internal device by AL clock cycles.
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value on the bank select inputs selects the bank,
and the address provided on inputs A0–A9 selects the starting column location. The value on input A10 determines whether or not
auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if
auto precharge is not selected, the row will remain open for subsequent accesses.
DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to be issued prior to tRCD(MIN) by delaying the
actual registration of the READ/WRITE command to the internal device by AL clock cycles. Input data appearing on the DQ is written
to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW,
the corresponding data will be written to memory; if the DM signal is registered HIGH, the corresponding data inputs will be ignored,
and a WRITE will not be executed to that byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be
available for a subsequent row activation a specified time (tRP) after the PRECHARGE command is issued, except in the case of
concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long as it does not interrupt the data
transfer in the current bank and does not violate any other timing parameters. After a bank has been precharged, it is in the idle
state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is allowed if
there is no open row in that bank (idle state) or if the previously open row is already in the process of precharging. However, the
precharge period will be determined by the last PRECHARGE command issued to the bank.
REFRESH
REFRESH is used during normal operation of the DDR2 SDRAM and is analogous to CAS#‐before‐RAS# (CBR) REFRESH. All banks must
be in the idle mode prior to issuing a REFRESH command. This command is nonpersistent, so it must be issued each time a refresh is
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required. The addressing is generated by the internal refresh controller. This makes the address bits a “Don’t Care” during a
REFRESH command.
SELF REFRESH
The SELF REFRESH command can be used to retain data in the DDR2 SDRAM, even if the rest of the system is powered down. When
in the self refresh mode, the DDR2 SDRAM retains data without external clocking. All power supply inputs (including VREF) must be
maintained at valid levels upon entry/exit and during SELF REFRESH operation.
The SELF REFRESH command is initiated like a REFRESH command except CKE is LOW. The DLL is automatically disabled upon
entering self refresh and is automatically enabled upon exiting self refresh.
ODT (On‐Die Termination)
The On‐Die Termination feature allows the DDR2 SDRAM to easily implement an internal termination resistance (Rtt). For the x8
option, ODT can be configured for DQ[7:0], DQS, DQS#, DM, RDQS, and RDQS# signals. For the x16 option, ODT can be configured for
DQ[15:0], UDQS, LDQS, UDQS#, LDQS#, and UDM, and LDM signals. The ODT feature can be configured with the Extended Mode
Register Set (EMRS) command, and turned on or off using the ODT input signal. Before and after the EMRS is issued, the ODT input
must be received with respect to the timings of tAOFD, tMOD(max), tAOND; and the CKE input must be held HIGH throughout the
duration of tMOD(max).
The DDR2 SDRAM supports the ODT on and off functionality in Active, Standby, and Power Down modes, but not in Self Refresh
mode. ODT timing diagrams follow for Active/Standby mode and Power Down mode.
EMRS to ODT Update Delay
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ODT Timing for Active/Standby (Idle) Mode and Standard Active Power‐Down Mode
0
CK#
CK
1
2
3
4
5
6
7
~
tIS
CKE
~
tIS
tIS
ODT
tANPD
VIH(AC)
~
VIL(AC)
tAXPD
Internal Term.
Resistance
tIS
tAOND
tAOFD
~
RTT
tAOF(Min)
tAON(Min)
tAON(Max)
tAOF(Max)
Notes:
1. Both ODT to Power Down Entry and Exit Latency timing parameter tANPD and tAXPD are met, therefore Non‐Power Down Mode timings have to be applied.
2. ODT turn‐on time, tAON(Min) is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max, tAON(Max) is when the
ODT resistance is fully on. Both are measured from tAOND.
3. ODT turn off time min, tAOF(Min), is when the device starts to turn off the ODT resistance. ODT turn off time max, tAOF(Max) is when the bus is in high
impedance. Both are measured from tAOFD.
ODT Timing for Precharge Power‐Down Mode
Note: Both ODT to Power Down Endtry and Exit Latencies tANPD and tAXPD are not met, therefore Power‐Down Mode timings have to be applied.
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Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
‐1.0 to 2.3
V
1, 3
VDDQ
Voltage on VDDQ pin relative to Vss
‐ 0.5 to 2.3
V
1, 3
VDDL
Voltage on VDDL pin relative to Vss
‐ 0.5 to 2.3
V
1, 3
Vin, Vout
Voltage on any pin relative to Vss
‐ 0.5 to 2.3
V
1, 4
Tstg
Storage Temperature
‐55 to +150
°C
1, 2
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than
500mV, VREF may be equal to or less than 300mV.
4. Voltage on any input or I/O may not exceed voltage on VDDQ.
AC and DC Operating Conditions
Recommended DC Operating Conditions (SSTL_1.8)
Symbol
Parameter
VDD
Rating
Units
Notes
1.9
V
1
1.8
1.9
V
5
1.7
1.8
1.9
V
1, 5
0.49*VDDQ
VREF‐0.04
0.50*VDDQ
VREF
0.51*VDDQ
VREF+0.04
mV
V
2, 3
4
Min.
Typ.
Max.
Supply Voltage
1.7
1.8
VDDL
Supply Voltage for DLL
1.7
VDDQ
Supply Voltage for Output
VREF
VTT
Input Reference Voltage
Termination Voltage
Notes:
1. There is no specific device VDD supply voltage requirement for SSTL_1.8 compliance. However, under all conditions VDDQ must be less than or equal to VDD.
2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ
of the transmitting device and VREF is expected to track variations in VDDQ.
3. Peak to peak AC noise on VREF may not exceed +/‐2% VREF(DC).
4. VTT of transmitting device must track VREF of receiving device.
5. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Operating Temperature Condition (1, 2, 3)
Symbol
TOPER
TOPER
TOPER
Parameter
Commercial Operating Temperature
Industrial Operating Temperature, Automotive Operating Temperature (A1)
Automotive Operating Temperature (A2)
Rating
Tc = 0 to 85, Ta = 0 to 70
Tc = ‐40 to 95, Ta = ‐40 to 85
Tc = ‐40 to 105, Ta = ‐40 to 105
Units
°C
°C
°C
Notes:
1. Tc = Operating case temperature at center of package.
2. Ta = Operating ambient temperature immediately above package center.
3. Both temperature specifications must be met.
Thermal Resistance
Package
60‐ball
84‐ball
Substrate
4‐layer
4‐layer
Theta‐ja
(Airflow = 0m/s)
35.8
33.8
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Rev. D, 08/30/2011
Theta‐ja
(Airflow = 1m/s)
32.4
30.4
Theta‐ja
(Airflow = 2m/s)
29.2
27.5
Theta‐jc
Units
3
3
C/W
C/W
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AC and DC Logic Input Levels
Single‐ended DC Input Logic Level
Symbol
VIH(DC)
VIL(DC)
Parameter
DC input logic HIGH
DC input logic LOW
Min.
VREF + 0.125
‐ 0.3
Max.
VDDQ + 0.3 V
VREF ‐ 0.125
Units
V
V
Notes
Single‐ended AC Input logic level
Symbol
Parameter
VIH(AC)
VIL(AC)
DDR2‐533
DDR2‐667, 800
Min.
Max.
AC input logic HIGH
VREF + 0.250
AC input logic LOW
VSSQ ‐ Vpeak
Units
Min.
Max.
VDDQ + Vpeak
VREF + 0.200
VDDQ + Vpeak
V
VREF ‐ 0.250
VSSQ ‐ Vpeak
VREF ‐ 0.200
V
Note: Refer to Overshoot and Undershoot Specification for Vpeak value: maximum peak amplitude allowed for overshoot and undershoot.
AC Input Test Conditions
Symbol
VREF
VREF
SLEW
Condition
Input reference voltage
Input signal maximum peak to peak swing
Input signal minimum slew rate
Value
0.5 x VDDQ
1.0
1.0
Units
V
V
V/ns
Notes
1
1
2, 3
Notes:
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for
falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions.
AC Input Test Signal Waveform
VDDQ
VIH(ac) min
VIH(dc) min
VSWING(MAX)
VREF
VIL(dc) max
VIL(ac) max
ΔTF
Falling Slew =
ΔTR
VREF - VIL(ac) max
ΔTF
Rising Slew =
VSS
VIH(ac) min - VREF
ΔTR
Differential Input AC logic level
Symbol
VID(AC)
VIX(AC)
Parameter
AC differential input voltage
AC differential crosspoint voltage
Min.
0.5
0.5*VDDQ‐0.175
Max.
VDDQ
0.5*VDDQ+0.175
Units
V
V
Notes
1, 3
2
Notes:
1. VID(AC) specifies the input differential voltage |VTR ‐VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP
is the complementary input signal (such as CK#, DQS#, LDQS# or UDQS#). The minimum value is equal to V IH(AC) ‐ V IL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ. VIX(AC) indicates
the voltage at which differential input signals must cross.
3. Refer to Overshoot and Undershoot Specifications for Vpeak value: maximum peak amplitude allowed for overshoot and undershoot.
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Differential Signal Level Waveform
VDDQ
VTR
Crossing point
VID
VIX or VOX
VCP
VSSQ
Differential AC Output Parameters
Symbol
VOX(AC)
Parameter
AC differential crosspoint voltage
Min.
0.5 x VDDQ‐0.125
Max.
0.5 x VDDQ+0.125
Units
V
Note: The typical value of VOX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ. VOX(AC)
indicates the voltage at which differential output signals must cross.
Overshoot and Undershoot Specification
AC Overshoot and Undershoot Specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area above VDD*
Maximum undershoot area below VSS*
DDR2‐533
0.5
0.5
0.8
0.8
DDR2‐667
0.5
0.5
0.8
0.8
DDR2‐800
0.5
0.5
0.66
0.66
Unit
V
V
V‐ns
V‐ns
DDR2‐800
0.5
0.5
0.23
0.23
Unit
V
V
V‐ns
V‐ns
Note: Please refer to AC Overshoot and Undershoot Definition Diagram.
AC Overshoot and Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
Maximum peak amplitude allowed for overshoot area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area above VDDQ*
Maximum undershoot area below VSSQ*
DDR2‐533
0.5
0.5
0.23
0.23
DDR2‐667
0.5
0.5
0.23
0.23
Note: Please refer to AC Overshoot and Undershoot Definition Diagram.
AC Overshoot and Undershoot Definition Diagram
Maximum Amplitude
Overshoot Area
Volts VDD/VDDQ
(V) VSS/VSSQ
Maximum Amplitude
Undershoot Area
Time (ns)
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Output Buffer Characteristics
Output AC Test Conditions
Symbol
VOTR
Parameter
Output Timing Measurement Reference Level
SSTL_18
0.5 x VDDQ
Units
V
Note: The VDDQ of the device under test is referenced.
Output DC Current Drive
Symbol
IOH(DC)
IOL(DC)
Parameter
Output Minimum Source DC Current
Output Minimum Sink DC Current
SSTL_18
13.4
‐13.4
Units
mA
mA
Notes
1, 3, 4
2, 3, 4
Notes:
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT ‐ VDDQ)/IOH must be less than 21 Ω for values of VOUT between VDDQ and VDDQ ‐ 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 Ω for values of VOUT between 0 V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(DC) and IOL(DC) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure VIH min
plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver
operating point (see Section 3.3 of JESD8‐15A) along a 21 Ω load line to define a convenient driver current for measurement.
OCD Default Characteristics
Description
Parameter
Output Impedance
Output impedance step size for OCD calibration
Pull‐up and pull‐down mismatch
Min.
Nom.
Max.
Normal 18 ohms
See full strength default driver characteristics
0
1.5
0
4
Units
Notes
ohms
1, 2
ohms
6
ohms
1, 2, 3
Output slew rate
SOUT
1.5
5
V/ns
1, 4, 5, 7, 8, 9
Notes:
1. Absolute Specifications (TOPER; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V). DRAM I/O specifications for timing, voltage, and slew rate are no longer applicable if
OCD is changed from default settings.
2. Impedance measurement condition for output source dc current: VDDQ = 1.7 V; VOUT = 1420 mV; (VOUTVDDQ)/IOH must be less than 23.4 Ω for values of
VOUT between VDDQ and VDDQ ‐ 280 mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7 V; VOUT = 280 mV; VOUT/IOL must be
less than 23.4 Ω for values of VOUT between 0 V and 280 mV.
3. Mismatch is absolute value between pull‐up and pull‐down, both are measured at same temperature and voltage.
4. Slew rate measured from VIL(AC) to VIH(AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by
design and characterization.
6. This represents the step size when the OCD is near 18 Ω at nominal conditions across all process corners/variations and represents only the DRAM uncertainty.
A 0 Ω value (no calibration) can only be achieved if the OCD impedance is 18 Ω +/‐0.75 Ω under nominal conditions.
7. DRAM output slew rate specification applies to 667 MT/s speed bins.
8. Timing skew due to DRAM output slew rate mis‐match between DQS / DQS# and associated DQ’s is included in tDQSQ and tQHS specification.
Output Capacitance
Paramater
Input Capacitance (CK and CK#)
Input Capacitance Delta (CK and CK#)
Input Capacitance (all other input‐only pins)
Input Capacitance Delta (all other input‐only
pins)
I/O Capacitance (DQ, DM, DQS, DQS#)
I/O Capacitance Delta (DQ, DM, DQS, DQS#)
Symbol
CCK
CDCK
CI
‐37C (DDR2‐533C)
Min
Max
1.00
2.00
0.25
1.00
2.00
‐3D (DDR2‐667D)
Min
Max
1.00
2.00
0.25
1.00
2.00
‐25E (DDR2‐800E)/
‐25D (DDR2‐800D)
Min
Max
1.00
2.00
0.25
1.00
1.75
Units
pF
pF
pF
CDI
0.25
0.25
0.25
pF
CIO
CDIO
2.50
4.00
0.50
2.50
3.50
0.50
2.50
3.50
0.50
pF
pF
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ODT DC Electrical Characteristics
Parameter/Condition
Rtt effective impedance value for EMRS(A6=0, A2=1); 75 ohm
Rtt effective impedance value for EMRS(A6=1, A2=0); 150 ohm
Rtt effective impedance value for EMRS(A6=A2=1); 50 ohm
Deviation of VM with respect to VDDQ/2
Symbol
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
Delta VM
Min.
60
120
40
‐6
Nom.
75
150
50
Max.
90
180
60
+6
Units
ohms
ohms
ohms
%
Notes
1
1
1
2
Note:
1. Measurement Definition for Rtt(eff):
Apply VIHac and VILac to test pin seperately, then measure current I(VIHac) and I(VILac) respectively
VIH(AC) VIL(AC)
Rtt(eff)
I(VIH(AC)) I(VIL(AC))
2. Measurement Defintion for VM:
Measure voltage (VM) at test pin (midpoint) with no load:
2 x VM
VM
1 x100%
VDDQ
ODT AC Electrical Characteristics and Operating Conditions
Symbol
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
Parameter/Condition
ODT turn‐on delay
ODT turn‐on
ODT turn‐on (Power‐Down Mode)
ODT turn‐off delay
ODT turn‐off
ODT turn‐off (Power‐Down Mode)
ODT to Power‐Down Mode Entry L:atency
ODT Power Down Exit Latency
Min.
2
tAC(Min)
tAC(Min)+2ns
2.5
tAC(Min)
tAC(Min)+2ns
3
8
Max.
2
tAC(Max)+0.7ns
2tCK+tAC(Max)+1ns
2.5
tAC(Max)+0.6ns
2.5tCK+tAC+1ns
Units
tCK
ns
ns
tCK
ns
ns
tCK
tCK
Notes
1
3
2
3
4
4
Notes:
1.
2.
3.
4.
ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully
on. Both are measured from tAOND.
ODT turn off time min is when the device starts to turn‐off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from
tAOFD.
For Standard Active Power‐Down (with MR S A12 = “0”), the non power ‐down timings (tAOND, tAON, tAOFD and tAOF) apply.
tANPD an d tAXPD define the timing limit when either Power Down Mode Timings (tAONPD, tAOFPD) or Non‐Power Down Mode timings (tAOND, tAOFD) have
to be applied
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IDD Specifications and Conditions
IDD Measurement Conditions
Symbol Parameter/Condition
Operating Current ‐ One bank Active ‐ Precharge:
IDD0
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING.
Operating Current ‐ One bank Active ‐ Read ‐ Precharge:
IDD1
IDD2P
IDD2Q
IDD2N
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS# is HIGH
between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W
Precharge Power‐Down Current:
All banks idle; tCK = tCK(IDD); CKE is LOW, CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING
Precharge Standby Current:
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING
Precharge Quiet Standby Current:
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Active Power‐Down Current:
IDD3Pf All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING. MRS A12 bit is set to
“0”(Fast Power‐down Exit).
Active Power‐Down Current:
IDD3Ps All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING. MRS A12 bit is set to
“1”(Slow Power‐down Exit).
Active Standby Current:
IDD3N All banks open;
tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs
are SWITCHING; Data bus inputs are SWITCHING.
Operating Current ‐ Burst Read:
IDD4R All banks open, Continuous burst reads, IOUT = 0 mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is
HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W
Operating Current ‐ Burst Write:
IDD4W All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is
HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING.
Burst Auto‐Refresh Current:
IDD5B tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus
inputs are SWITCHING; Data bus inputs are SWITCHING.
Distributed Refresh Current:
IDD5D tCK = tCK(IDD); Refresh command frequency satisfying tREFI; CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus
inputs are SWITCHING; Data bus inputs are SWITCHING.
IDD6
IDD7
Self‐Refresh Current:
CK and CK# at 0 V; CKE 0.2 V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING.
Operating Bank Interleave Read Current:
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD) ‐ 1 x tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tFAW =
tFAW(IDD), tRCD = 1 x tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same
as IDD4R;
Notes:
1. Data bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS, and UDQS#. IDD values must be met with all combinations of EMRS bits 10 and 11.
2. For DDR2‐667/800 testing, tCK in the Conditions should be interpreted as tCK(avg).
3. Definitions for IDD:
a.
LOW is defined as VIN ≤ VILAC(max).
b. HIGH is defined as VIN ≥ VIHAC(min).
c.
STABLE = inputs stable at a HIGH or LOW level.
d. FLOATING = inputs at VREF = VDDQ/2.
e.
SWITCHING = inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs
changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes.
4. Legend: A=Activate, RA=Read with Auto‐Precharge, D=DESELECT.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. D, 08/30/2011
19
IS43/46DR81280A, IS43/46DR16640A
IDD Specifications
Symbol
IDD0
IDD1
IDD2P
IDD2N
IDD2Q
IDD3Pf
IDD3Ps
IDD3N
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
Configuration
‐37C
DDR2‐533C
‐3D
DDR2‐667D
‐25E/25D
DDR2‐800E/800D
Units
x8
x16
x8
x16
x8/x16
x8/x16
x8
x16
x8/x16
x8/x16
x8/x16
x8
x16
x8
x16
x8/x16
x8/x16
x8/x16
x8
x16
80
110
95
130
15
40
40
45
30
18
68
190
220
200
220
250
45
7
270
310
90
120
105
140
15
45
45
50
33
18
72
210
260
220
260
260
45
7
300
350
100
130
115
150
15
50
50
55
38
18
75
240
290
250
290
270
45
7
310
360
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes:
1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Parametric Test Condition.
3. IDD parameters are specified with ODT disabled.
o
4. For A2 temperature grade with TA > 85 C: IDD2P, IDD3P and IDD6 are deregulated to maximum values 18mA, 22mA and 9mA, respectively.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. D, 08/30/2011
20
IS43/46DR81280A, IS43/46DR16640A
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
‐37C
DDR2‐533C
Parameter
Symbol
Min Max
Row Cycle Time
Auto Refresh Row
Cycle Time
Row Active Time
Row Active to
Column Address
Delay
Row Active to Row
Active Delay
Four Activate
Window
Column Address to
Column Address
Delay
Row Precharge Time
Write Recovery Time
Auto precharge Write
recovery + Precharge
Time
Clock Cycle Time
Clock High Level
Width
Clock Low Level
Width
Cycle to cycle
Data‐Out Edge to
Clock Skew Edge
DQS‐Out Edge to
Clock Skew Edge
DQS‐Out Edge to
Clock Skew Edge
Data‐Out Hold Time
from DQS
Data Hold Skew
Factor
Clock Half Period
‐3D
DDR2‐667D
Min Max
‐25E
DDR2‐800E
Min Max
‐25D
DDR2‐800D
Min Max
Units
Notes
tRC
60
60
60
57.5
ns
tRFC
127.5
127.5
127.5
127.5
ns
11
tRAS
45
70K
45
70K
45
70K
45
70K
ns
21
tRCD
15
15
15
12.5
ns
20
tRRD(x8)
7.5
7.5
7.5
7.5
ns
tRRD(x16)
10
10
10
10
ns
tFAW(x8)
37.5
37.5
35
35
ns
tFAW(x16)
50
50
45
45
ns
tCCD
2
2
2
2
tCK
tRP
15
15
15
12.5
ns
tWR
15
15
15
15
ns
ns
12
tDAL
Min = tWR+tRP, Max = n/a
tCK3 (CL=3)
5
8
5
8
ns
2, 24
tCK4 (CL=4)
3.75
8
3.75
8
3.75
8
3.75
8
ns
2, 24
tCK5 (CL=5)
3
8
3
8
2.5
8
ns
2, 24
tCK6 (CL=6)
2.5
8
2.5
8
ns
24
tCH
0.45
0.55
0.48
0.52
0.48
0.52
0.48
0.52
tCK
tCL
0.45
0.55
0.48
0.52
0.48
0.52
0.48
0.52
tCK
ps
tJITcc
250
250
200
200
tAC
‐0.5
0.45
‐0.45
0.45
‐0.4
0.4
‐0.4
0.4
ns
tDQSCK
‐0.45
0.4
‐0.4
0.4
‐0.35
0.35
‐0.35
0.35
ns
tDQSQ
0.3
0.24
0.2
0.2
ns
ns
ps
ns
5
tQH
tQHS
tHP
Min = tHP(min)‐tQHS, Max = n/a
400
340
300
Min = tCH(min)/tCL(min), Max = n/a
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. D, 08/30/2011
300
21
IS43/46DR81280A, IS43/46DR16640A
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
‐37C
‐3D
‐25E
‐25D
Parameter
Symbol DDR2‐533C DDR2‐667D DDR2‐800E DDR2‐800D
Min Max Min Max Min Max Min Max
Units
Notes
Input Setup Time (fast
slew rate)
tIS
250
200
175
175
ps
15,17
Input Hold Time (fast slew
rate)
tIH
375
275
250
250
ps
15,17
tIPW
0.6
0.6
0.6
0.6
tCK
tDQSH
0.35
0.35
0.35
0.35
tCK
tDQSL
0.35
0.35
0.35
0.35
tCK
tCK
Input Pulse Width
Write DQS High Level
Width
Write DQS Low Level
Width
CLK to First Rising Edge of
DQS‐In
Data‐In Setup Time to
DQS‐In (DQ, DM)
Data‐In Hold Time to
DQS‐In (DQ, DM)
DQS falling edge from CLK
rising Setup Time
DQS falling edge from CLK
rising Hold Time
DQ & DM Pulse Width
Read DQS Preamble Time
Read DQS Postamble
Time
Write DQS Preamble
Setup Time
Write DQS Preamble Hold
Time
Write DQS Preamble Time
Write DQS Postamble
Time
Internal Read to
Precharge Command
Delay
Internal Write to Read
Command Delay
Data‐Out to High
Impedance from CK/CK#
DQS/DQS# Low
Impedance from CK/CK#
tDQSS
Min = ‐0.25tCK, Max = +0.25tCK
tDS
100
100
50
50
ps
16,17,
18
tDH
225
175
125
125
ps
16,17,
18
tDSS
0.2
0.2
0.2
0.2
tCK
tDSH
0.2
0.2
0.2
0.2
tCK
tDIPW
0.35
0.35
0.35
0.35
tCK
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
tWPRES
0
0
0
0
tCK
tWPREH
0.25
0.25
0.25
0.25
tCK
tWPRE
0.35
0.35
0.35
0.35
tCK
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
10
tRTP
7.5
7.5
7.5
7.5
ns
tWTR
7.5
7.5
7.5
7.5
ns
13
tHZ
Min = n/a, Max = tAC(max)
ns
7
tLZ(DQS)
Min = tAC(min), Max = tAC(max)
ns
7
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. D, 08/30/2011
22
IS43/46DR81280A, IS43/46DR16640A
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
‐37C
DDR2‐533C
Min
DQ to Low Impedance from
CK/CK#
Mode Register Set Delay
OCD Drive Mode Output
Delay
ODT Drive Mode Output
Delay
Exit Self refresh to Non‐Read
Command
Exit Self refresh to Read
Command
Exit Precharge Power Down
to any Non‐Read Command
Exit Active Power Down to
Read Command
Exit Active Power Down to
Read Command (slow exit,
low power)
Minimum time clocks
remains ON after CKE
asynchronously drops LOW
CKE minimum high and low
pulse width
Average Periodic Refresh
Interval (‐40°C ≤ TC ≤ +85° C)
Average Periodic Refresh
Interval (+85°C
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