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IS49FL004T-33JCE

IS49FL004T-33JCE

  • 厂商:

    ISSI(芯成半导体)

  • 封装:

    LCC-32

  • 描述:

    IC FLASH 4MBIT PARALLEL 32PLCC

  • 数据手册
  • 价格&库存
IS49FL004T-33JCE 数据手册
IS49FL004T 2 Mbit / 4 Mbit 3.3 Volt-only Firmware Hub/LPC Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 3.0 V - 3.6 V • Standard Intel Firmware Hub/LPC Interface - Read compatible to Intel® 82802 Firmware Hub devices - Conforms to Intel LPC Interface Specification Revision 1.1 • Memory Configuration - IS49FL002: 256K x 8 (2 Mbit) - IS49FL004: 512K x 8 (4 Mbit) • Cost Effective Sector/Block Architecture - IS49FL002: Sixty-four uniform 4 Kbyte sectors, or sixteen uniform 16 Kbyte blocks (sector group) - IS49FL004: One hundred and twenty-eight uniform 4 Kbyte sectors, or eight uniform 64 Kbyte blocks (sector group) • Top Boot Block - IS49FL002: 16 Kbyte top Boot Block - IS49FL004: 64 Kbyte top Boot Block • Firmware HUB (FWH)/Low Pin Count (LPC) Mode - 33 MHz synchronous operation with PCI bus - 5-signal communication interface for in-system read and write operations - Standard SDP Command Set - Data# Polling and Toggle Bit features - Register-based read and write protection for each block (FWH mode only) - 4 ID pins for multiple Flash chips selection (FWH mode only) - 5 GPI pins for General Purpose Input Register - TBL# pin for hardware write protection to Boot Block - WP# pin for hardware write protection to whole memory array except Boot Block • Address/Address Multiplexed (A/A Mux) Mode - 11-pin multiplexed address and 8-pin data I/O interface - Supports fast programming on EPROM programmers - Standard SDP Command Set • Automatic Erase and Program Operation - Data# Polling and Toggle Bit features - Build-in automatic program verification for extended product endurance - Typical 25 μs/byte programming time - Typical 50 ms sector/block/chip erase time • Lower Power Consumption • Two Configurable Interfaces - In-System hardware interface: Auto detection of Firmware Hub (FWH) or Low Pin Count (LPC) memory cycle for in-system read and write operations - Address/Address-Multiplexed (A/A Mux) interface for programming on EPROM Programmers during manufacturing - Typical 2 mA active read current - Typical 7 mA program/erase current • High Product Endurance - Guarantee 100,000 program/erase cycles per single sector (preliminary) - Minimum 20 years data retention • Compatible Pin-out and Packaging - 32-pin (8 mm x 14 mm) VSOP - 32-pin PLCC - Optional Halogen-free package • Hardware Data Protection 1 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T GENERAL DESCRIPTION The IS49FL002/004 are 2 Mbit/4 Mbit 3.3 Volt-only Flash Memories used as BIOS in PCs and Notebooks. These devices are designed to use a single low voltage, ranging from 3.0 Volt to 3.6 Volt, power supply to perform insystem or off-system read, erase and program operations. The 12.0 Volt VPP power supply are not required for the program and erase operations of devices. The devices conform to Intel® Low Pin Count (LPC) Interface specification revision 1.1 and also read-compatible with Intel 82802 Firmware Hub (FWH) for most PC and Notebook applications. The IS49FL002/004 support two configurable interfaces: In-system hardware interface which can automatic detect the FWH or LPC memory cycle for in-system read and write operations, and Address/Address Multiplexed (A/ A Mux) interface for fast manufacturing on EPROM Programmers. These devices are designed to work with both Intel Family chipset and Non-Intel Family Chipset platforms, it will provide PC and Notebook manufacturers great flexibility and simplicity for design, procurement, and material inventory. The memory array of IS49FL002 is divided into uniform 4 Kbyte sectors, or uniform 16 Kbytes blocks (sector group - consists of four adjecent sectors). The memory array of IS49FL004 is divided into uniform 4 Kbyte sectors, or uniform 64 Kbyte blocks (sector group - consists of sixteen adjecent sectors). The sector or block erase feature allows users to flexibly erase a memory area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in others. The chip erase feature allows the whole memory to be erased in one single erase operation. The devices can be programmed on a byte-by-byte basis after performing the erase operation. The program operation of IS49FL002/004 is executed by issuing the program command code into command register. The internal control logic automatically handles the programming voltage ramp-up and timing. The erase operation of the devices is executed by issuing the sector, block, or chip erase command code into command register. The internal control logic automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit functions in FWH/LPC and A/A Mux modes, the progress or completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or Toggle Bit on I/O6. The IS49FL002 has a 16 Kbyte top boot block which can be used to store user security data and code. The IS49FL004 has a 64 Kbyte top boot block. The boot block can be write protected by a hardware method controlled by the TBL# pin or a register-based protection turned on/off by the Block Locking Registers (FWH mode only). The rest of blocks except boot block in the devices also can be write protected by WP# pin or Block Locking Registers (FWH mode only). The IS49FL002/004 are manufactured on pFLASH™’s advanced nonvolatile technology. The devices are offered in 32-pin VSOP and PLCC packages with optional environmental friendly Halogen-free package. 2 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T A5 2 1 32 31 30 VCC NC GPI4 3 VCC 4 NC GPI4 WP# A10 WP# CLK A6 R/C# CLK GPI0 VCC GPI0 NC 5 RST# RST# RST# A7 GPI3 GPI1 GPI3 GPI1 A9 A/A Mux GPI2 LPC GPI2 FWH A/A Mux LPC FWH A8 CONNECTION DIAGRAMS A/A Mux LPC FWH 29 IC IC IC 6 28 GND GND GND 7 27 NC NC NC A4 8 26 NC NC ID3 RES A3 9 25 VCC VCC VCC ID2 RES A2 10 24 OE# INIT# INIT# ID1 RES A1 11 23 WE# ID0 RES A0 12 22 NC NC NC FWH0 LAD0 I/O0 13 21 I/O7 RES RES I/O4 I/O5 I/O6 RES RES RES RES RES RES 20 LAD3 19 FWH3 18 GND LAD2 FWH2 17 GND I/O1 16 GND A/A Mux LPC LAD1 FWH 15 FWH1 14 I/O3 TBL# NC I/O2 TBL# LFRAME# FWH4 32-PIN PLCC FWH LPC NC NC NC NC NC NC GND GND IC IC GPI4 GPI4 CLK CLK V CC V CC NC NC RST# RST# GPI3 GPI3 GPI2 GPI2 GPI1 GPI1 GPI0 GPI0 WP# WP# TBL# TBL# A/A Mux NC NC NC GND IC A10 R/C# V CC NC RST# A9 A8 A7 A6 A5 A4 A/A Mux 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-PIN (8mm x 14mm) VSOP Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# WE# NC I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 LPC INIT# LFRAME# NC RES RES RES RES LAD3 GND LAD2 LAD1 LAD0 RES RES RES RES FWH INIT# FW H4 NC RES RES RES RES FW H3 GND FW H2 FW H1 FW H0 ID0 ID1 ID2 ID3 3 IS49FL004T PRODUCT ORDERING INFORMATION IS49FL00x T -33 J C E Environmental Attribute E = Halogen-free Package Blank = Standard Package Temperature Range C = Commercial (0°C to +85°C) Package Type J = 32-pin Plastic J-Leaded Chip Carrier (32J) V = 32-pin (8 mm x 14 mm) VSOP (32V) Speed Option Boot Block Location T = Top Boot Block Device Number IS49FL002 (2 Mbit) IS49FL004 (4 Mbit) Part Number MHz Boot Block Location IS49FL002T-33JCE IS49FL002T-33JC IS49FL002T-33VCE 33 Commercial o o (0 C to + 85 C) Top 32V IS49FL004T-33JCE IS49FL004T-33VCE Temperature Range 32J IS49FL002T-33VC IS49FL004T-33JC Package 32J 33 IS49FL004T-33VC Commercial o o (0 C to +85 C) Top 32V 4 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T PIN DESCRIPTIONS In te rfa c e S YM B O L T YP E D E S C R IP T IO N PP FW H LPC A [1 0 :0 ] I X A d d re s s Inp uts : F o r i np uti ng the m ulti p le x a d d re s s e s a nd c o m m a nd s i n P P m o d e . R o w a nd c o lum n a d d re s s e s a re la tc he d d uri ng a re a d o r w ri te c yc le c o ntro lle d b y R /C # p i n. R /C # I X R o w /C o lum n S e le c t: To i nd i c a te the ro w o r c o lum n a d d re s s i n P P m o d e . W he n thi s p i n g o e s lo w, the ro w a d d re s s i s la tc he d . W he n thi s p i n g o e s hi g h, the c o lum n a d d re s s i s la tc he d . I/O X D a ta Inp uts /O utp uts : U s e d fo r A /A M ux m o d e o nly, to i np ut c o m m a nd /d a ta d uri ng w ri te o p e ra ti o n a nd to o utp ut d a ta d uri ng re a d o p e ra ti o n. T he d a ta p i ns flo a t to tri -s ta te w he n O E # i s d i s a b le d . WE# I X W ri te E na b le : A c ti va te the d e vi c e fo r w ri te o p e ra ti o n. W E # i s a c ti ve lo w. OE # I X O utp ut E na b le : C o ntro l the d e vi c e 's o utp ut b uffe rs d uri ng a re a d c yc le . O E # i s a c ti ve lo w. I/O [7 :0 ] IC I X X X Inte rfa c e C o nfi g ura ti o n S e le c t: T hi s p i n d e te rm i ne s w hi c h m o d e i s s e le c te d . W he n p ulls hi g h, the d e vi c e e nte rs i nto A /A M ux m o d e . W he n p ulls lo w, F W H /L P C m o d e i s s e le c te d . T hi s p i n m us t b e s e tup d uri ng p o w e r-up o r s ys te m re s e t, a nd s ta ys no c ha ng e d uri ng o p e ra ti o n. Thi s p i n i s i nte rna lly p ulle d d o w n w i th a re s i s to r b e tw e e n 2 0 -1 0 0 K R S T# I X X X R e s e t: To re s e t the o p e ra ti o n o f the d e vi c e a nd re turn to s ta nd b y m o d e . IN IT # I X X Ini ti a li ze : Thi s i s a s e c o nd re s e t p i n fo r i n-s ys te m us e . IN IT # o r R S T # p i n p ulls lo w w i ll i ni ti a te a d e vi c e re s e t. G P I[4 :0 ] I X X F W H /L P C G e ne ra l P urp o s e Inp uts : U s e d to s e t the G P I_ R E G fo r s ys te m d e s i g n p urp o s e o nly. T he va lue o f G P I_ R E G c a n b e re a d thro ug h F W H i nte rfa c e . The s e p i ns s ho uld b e s e t a t d e s i re d s ta te b e fo re the s ta rt o f the P C I c lo c k c yc le fo r re a d o p e ra ti o n a nd s ho uld re m a i n no c ha ng e unti l the e nd o f the re a d c yc le . U nus e d G P I p i ns m us t no t b e flo a te d . TB L # I X X To p B lo c k L o c k : W he n p ulls lo w, i t e na b le s the ha rd w a re w ri te p ro te c ti o n fo r to p b o o t b lo c k . W he n p ulls hi g h, i t d i s a b le s the ha rd w a re w ri te p ro te c ti o n. WP# I X X W ri te P ro te c t: W he n p ulls lo w, i t e na b le s the ha rd w a re w ri te p ro te c ti o n to the m e m o ry a rra y e xc e p t the to p b o o t b lo c k . W he n p ulls hi g h, i t d i s a b le s ha rd w a re w ri te p ro te c ti o n. I/O X F W H A d d re s s a nd D a ta : T he m a jo r I/O p i ns fo r tra ns m i tti ng d a ta , a d d re s s e s a nd c o m m a nd c o d e i n F W H m o d e . I X F W H Inp ut: To i nd i c a te the s ta rt o f a F W H m e m o ry c yc le o p e ra ti o n. A ls o us e d to a b o rt a F H W m e m o ry c yc le i n p ro g re s s . F W H [3 :0 ] FW H4 I/O X L P C A d d re s s a nd D a ta : T he m a jo r I/O p i ns fo r tra ns m i tti ng d a ta , a d d re s s e s a nd c o m m a nd c o d e i n L P C m o d e . LF RA M E # I X L P C F ra m e : To i nd i c a te the s ta rt o f a L P C m e m o ry c yc le o p e ra ti o n. A ls o us e d to a b o rt a L P C m e m o ry c yc le i n p ro g re s s . CLK I X F W H /L P C C lo c k : To p ro vi d e a s ync hro no us c lo c k fo r F W H a nd L P C m o d e o p e ra ti o ns . L A D [3 :0 ] ID [3 :0 ] X I Id e nti fi c a ti o n Inp uts : T he s e fo ur p i ns a re p a rt o f the m e c ha ni s m tha t a llo ws m ulti p le F W H d e vi c e s to b e a tta c he d to the s a m e b us . The s tra p p i ng o f the s e p i ns i s us e d to i d e nti fy the c o m p o ne nt. T he b o o t d e vi c e m us t ha ve ID [3 :0 ] = 0 0 0 0 b a nd i t i s re c o m m e nd e d tha t a ll s ub s e q ue nt d e vi c e s s ho uld us e s e q ue nti a l up -c o unt s tra p p i ng . The s e p i ns a re i nte rna lly p ulle d -d o w n w i th a re s i s to r b e tw e e n 2 0 -1 0 0 K X V CC X X X D e vi c e P o w e r S up p ly GN D X X X G ro und NC X X X N o C o nne c ti o n 5 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T RE S X X R e s e rve d : R e s e rve d func ti o n p i ns fo r future us e . Note: I = Input, O = Output 6 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T BLOCK DIAGRAM ERASE/PROGRA M VOLTAGE GENERATOR TBL# W P# INIT# FWH[3:0] or LAD[3:0] FWH4 or LF RA ME# CLK GPI[4:0] I/ O B U F F E R S FWH/LPC MODE INTERFACE H I GH V O L T A G E SWITCH A[10:0] I/O[7:0] WE# PP MODE I N T ER F A C E CONTROL LOGIC OE# R/C# DATA LATCH SENSE AMP IC AD D R ES S LATCH RST# Y-DECODER X-DECODER Y-GA TING MEMORY ARRAY DEVICE OPERATION MODE SELECTION controlled by a R/C# pin. The IS49FL002/004 can operate in two configurable interfaces: The In-System Hardware interface and Address/Address Multiplexed (A/A Mux) interface controlled by IC pin. If the IC pin is set to logic high (V IH), the devices enter into A/A Mux interface mode. If the IC pin is set logic low (VIL), the devices will be in in-system hardware interface mode. During the in-system hardware interface mode, the devices can automatically detect the Firmware Hub (FWH) or Low Pin Count (LPC) memory cycle sent from host system and response to the command accordingly. The IC pin must be setup during power-up or system reset, and stays no change during device operation. When working in-system, typically on a PC or Notebook, the IS49FL002/004 are connected to the host system through a 5-pin communication interface operated based on a 33-MHz synchronous clock. The 5-pin interface is defined as FWH[3:0] and FWH4 pins under FWH mode or as LAD[3:0] and LFRAME# pins under LPC mode for easy understanding as to those existing compatible products. When working off-system, typically on a EPROM Programmer, the devices are operated through 11-pin multiplexed address - A[10:0] and 8-pin data I/O - I/O[7: 0] interfaces. The memory addresses of devices are input through two bus cycles as row and column addresses Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 7 IS49FL004T PRODUCT IDENTIFICATION The product identification mode can be used to read the Manufacturer ID and the Device ID by a software Product ID Entry command in both in-system hardware interface and A/A Mux interface modes. The product indentification mode is activated by three-bus-cycle command. Refer to Table 1 for the Manufacturer ID and Device ID of IS49FL00x and Table 14 for the SDP Command Definition. In FWH mode, the product identification can also be read directly at FFBC0000h for Manufacturer ID - “9Dh” and FFBC0001h for Device ID in the 4 GByte system memory map. Table 1: Product Identification Description Manufacturer ID Device ID IS49FL002 IS49FL004 2Mb 4Mb Address Data 00000h 00002h 9Dh 7Fh 00001h 6Dh 6Eh 8 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T DEVICE OPERATION (CONTINUED) The IS49FL002/004 provide three levels of data protection for the critical BIOS code of PC and Notebook. It includes memory hardware write protection, hardware data protection and software data protection. SOFTWARE DATA PROTECTION The devices feature a software data protection function to protect the device from an unintentional erase or program operation. It is performed by JEDEC standard Software Data Protection (SDP) command sequences. See MEMORY HARDWARE WRITE PROTECTION Table 14 for SDP Command Definition. A program opThe IS49FL002 has a 16 Kbyte top boot block and the eration is initiated by three memory write cycles of unIS49FL004 has a 64 Kbyte top boot block. When work- lock command sequence. A chip (only available in A/A ing in-system, the memory hardware write protection fea- Mux mode), sector or block erase operation is initiated ture can be activated by two control pins - Top Block by six memory write cycles of unlock command Lock (TBL#) and Write Protection (WP#) for both FWH sequence. During SDP command sequence, any invalid and LPC modes. When TBL# is pulled low (VIL ), the boot command or sequence will abort the operation and force block is hardware write protected. A sector erase, block the device back to standby mode. erase, or byte program command attempts to erase or program the boot block will be ignored. When WP# is BYTE PROGRAMMING pulled low (VIL ), the Block 0 ~ Block 14 of IS49FL002, or the Block 0 ~ Block 6 of IS49FL004 (except the boot In program operation, the data is programmed into the block) are hardware write protected. Any attemp to erase devices (to a logical “0”) on a byte-by-byte basis. In FWH or program a sector or block within this area will be and LPC modes, a program operation is activated by writing the three-byte command sequence and program ignored. address/data through four consecutive memory write Both TBL# and WP# pins must be set low (VIL) for pro- cycles. In A/A Mux mode, a program operation is actitection or high (VIH) for un-protection prior to a program vated by writing the three-byte command sequence and or erase operation. A logic level change on TBL# or WP# program address/data through four consecutive bus pin during a program or erase operation may cause un- cycles. The row address (A10 - A0) is latched on the falling edge of R/C# and the column address (A21 - A11) predictable results. is latched on the rising edge of R/C#. The data is latched The TBL# and WP# pins work in combination with the on the rising edge of WE#. Once the program operation block locking registers. When active, these pins write is started, the internal control logic automatically handles protect the appropriate blocks regardless of the associ- the internal programming voltages and timing. ated block locking registers setting. A data “0” can not be programmed back to a “1”. Only erase operation can convert “0”s to “1”s. The Data# PollHARDWARE DATA PROTECTION ing on I/O7 or Toggle Bit on I/O6 can be used to detect Hardware data protection protects the devices from un- when the programming operation is completed in FWH, intentional erase or program operation. It is performed LPC, and A/A Mux modes. by the devices automatically in the following three ways: (a) VCC Detection: if VCC is below 1.8 V (typical), the CHIP ERASE program and erase functions are inhibited. (b) Write Inhibit Mode: holding any of the signal OE# The entire memory array can be erased by chip erase low, or WE# high inhibits a write cycle (A/A Mux mode operation available under the A/A Mux mode operated by EPROM Programmer only. Pre-programs the device only). (c) Noise/Glitch Protection: pulses of less than 5 ns (typi- is not required prior to the chip erase operation. Chip cal) on the WE# input will not initiate a write cycle (A/A erase starts immediately after a six-bus-cycle chip erase command sequence. All commands will be ignored once Mux mode only). the chip erase operation has started. The Data# Polling on I/O7 or Toggle Bit on I/O6 can be used to detect the progress or completion of erase operation. The devices will return back to standy mode after the9 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T completion of chip erase. 10 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T DEVICE OPERATION (CONTINUED) SECTOR AND BLOCK ERASE I/O6 TOGGLE BIT The IS49FL002 contains sixty-four uniform 4 Kbyte sectors, or sixteen uniform 16 Kbyte blocks (sector group consists of four adjecent sectors). The IS49FL004 contains one hundred and twenty-eight uniform 4 Kbyte sectors, or eight uniform 64 Kbyte blocks (sector group consists of sixteen adjecent sectors). A sector erase command is used to erase an individual sector. A block erase command is used to erase an individual block. See Table 12 - 13 for Sector/Block Address Tables. The IS49FL002/004 also provide a Toggle Bit feature to detect the progress or the completion of a program or erase operation. During a program or erase operation, an attempt to read data from the devices will result in I/ O6 toggling between “1” and “0”. When the program or erase operation is complete, I/O6 will stop toggling and valid data will be read. Toggle bit may be accessed at any time during a program or erase operation. RESET In FWH/LPC mode, an erase operation is activated by writing the six-byte command sequence through six consecutive write memory cycles. In A/A Mux mode, an erase operation is activated by writing the six-byte command in six consecutive bus cycles. Pre-programs the sector or block is not required prior to an erase operation. I/O7 DATA# POLLING The devices provide a Data# Polling feature to indicate the progress or the completion of a program or erase operation in all modes. During a program operation, an attempt to read the device will result in the complement of the last loaded data on I/O7. Once the program cycle is complete, the true data of the last loaded data is valid on all outputs. During an erase operation, an attempt to read the device will result a “0” on I/O7. After the erase cycle is complete, an attempt to read the device will result a “1” on I/O7. Any read, program, or erase operation to the devices can be reset by the INIT# or RST# pins. INIT# and RST# pins are internally hard-wired and have same function to the devices. The INIT# pin is only available in FWH and LPC modes. The RST# pin is available in all modes. It is required to drive INIT# or RST# pins low during system reset to ensure proper initialization. During a memory read operation, pulls low the INIT# or RST# pin will reset the devices back to standby mode and then the FWH[3:0] of FWH interface or the LAD[3: 0] of LPC interface will go to high impedance state. During a program or erase operation, pulls low the INIT# or RST# pin will abort the program or erase operation and reset the devices back to standby mode. A reset latency will occur before the devices resume to standby mode when such reset is performed. When a program or erase operation is reset before the completion of such operation, the memory contents of devices may become invalid due to an incomplete program or erase operation. 11 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T FWH MODE OPERATION FWH MODE MEMORY READ/WRITE OPERATION FWH ABORT OPERATION In FWH mode, the IS49FL002/004 are connected through a 5-pin communication interface - FWH[3:0] and FWH4 pins to work with Intel® Family of I/O Controller Hubs (ICH) chipset platforms. The FWH mode also support JEDEC standard Software Data Protection (SDP) product ID entry, byte program, sector erase, and block erase command sequences. The chip erase command sequence is only available in A/A Mux mode. The FWH4 signal indicates the start of a memory cycle or the termination of a cycle in FWH mode. Asserting FWH4 for one or more clock cycle with a valid START value on FWH[3:0] will initiate a memory read or memory write cycle. If the FWH4 is driven low again for one or more clock cycles during this cycle, this cycle will be terminated and the device will wait for the ABORT command “1111b” to release the FWH[3:0] bus. If the abort occurs during the program or erase operation such as The addresses and data are transmitted through the 4- checking the operation status with Data# Polling (I/O7) bit FWH[3:0] bus synchronized with the input clock on or Toggle Bit (I/O6) pins, the read status cycle will be CLK pin during a FWH memory cycle operation. The aborted but the internal program or erase operation will address or data on FWH[3:0] bus is latched on the ris- not be affected. Only the reset operation initiated by RST# ing edge of the clock. The pulse of FWH4 pin inserted or INIT# pin can terminate the program or erase operation. for one clock indicates the start of a FWH memory read or memory write cycle. Once the FWH memory cycle is started, asserted by FW H4, a START value “11xxb” is expected by IS49FL002/004 as a valid command cycle and is used to indicates the type of memory cycle (“1101b” for FWH memory read cycle or “1110b” for FWH memory write cycle). Addresses and data are transferred to and from the device decided by a series of “fields”. Field sequences and contents are strictly defined for FWH memory read and write operations. Refer to Table 2 and 3 for FWH Memory Read Cycle Definition and FWH Memory Write Cycle Definition. There are 7 clock fields in a FWH memory cycle that gives a 28 bit memory address A27 - A0 through FWH [3:0] pins, but only the last five address fields will be decoded by the FWH devices. The IS49FL002 decodes A17 - A0 with A19 and A18 ignored. The IS49FL004 decodes A18 - A0 with A19 ignored. The address A22 has the special function of directing reads and writes to the Flash array when A22 = 1 or to the register space with A22 = 0. The A27 - A23 and A21 - A20 are don’t care for the devices under FWH mode. The IS49FL002/004 are mapped within the top 4 Mbyte address range devoted to the FWH devices in the 4 Gbyte system memory space. Please see Table 11 for System Memory Map. 12 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T FWH MODE OPERATION (CONTINUED) Table 2: FWH Memory Read Cycle Definition Clock Cycle Field FWH[3:0] 1 START 1101 IDSEL 0000 to 1111 2 Direction Description IN Start of Cycle: "1101b" to indicate the start of a memory read cycle. IN ID Select Cycle: Indicates which FWH device should respond. If the IDSEL field matches the value set on ID[3:0] pins, then the particular FWH device will respond to subsequent commands. 3-9 IMADDR YYYY IN Address Cycles: This is the 28-bit memory address. The addresses transfer most-significant nibble first and leastsignificant nibble last. (i.e., A27 - 24 on FWH[3:0] first, and A3 - A0 on FWH[3:0] last). 10 IMSIZE 0000 IN Memory Size Cycle: Indicates how many bytes will be or transferred during multi-byte operations. The IS49FL00x only support "0000b" for one byte operation. 11 TAR0 1111 IN then Float 12 TAR1 1111 (float) 13 RSYNC 0000 (READY) OUT Ready Sync: The FWH device indicates the least-significant nibble of data byte will be ready in next clock cycle. 14-15 DATA YYYY OUT Data Cycles: The 8-bits data transferred with least-significant nibble first and most-significant nibble last. (i.e., I/O3 - I/O0 on LAD[3:0] first, then I/O7 - I/O4 on FWH[3:0] last). 16 TAR0 1111 OUT then Float 17 TAR1 1111 (float) Float then Turn-Around Cycle 1: The Intel ICH resumes control of the bus during this cycle. IN Turn-Around Cycle 0: The Intel ICH has driven the bus then float it to all "1"s and then floats the bus. Float then Turn-Around Cycle 1: The device takes control of the bus during this cycle. OUT Turn -Around Cycle 0: The FWH device has driven the bus then float it to all "1"s and then floats the bus. FWH MEMORY READ CYCLE WAVEFORMS C LK RST# or INIT# FWH4 Memor y Read Start FWH[3:0] 1101b 1 Clock IDSEL ID[3:0] IMSIZE Address xxxxb x1xxb 1 Clock A[19:16] A[15:12] A[11:8] Load Address in 7 Clocks From Host to Device A[7:4] A[3:0] 0000b TAR 1111b Tri-State 2 Clocks RSY N C 0000b 1 Clock Data D[3:0] D[7:4] TAR 1111b Tri-State Data Out 2 Clocks 2 Clocks From Device to Host Next Start 1101b 1 Clock 13 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T FWH MODE OPERATION (CONTINUED) Table 3: FWH Memory Write Cycle Definition Clock Cycle Field FWH[3:0] 1 START 1110 IDSEL 0000 to 1111 2 Direction Description IN Start of Cycle: "1110b" to indicate the start of a memory write cycle. IN ID Select Cycle: Indicates which FWH device should respond. If the IDSEL field matches the value set on ID[3:0] pins, then the particular FWH device will respond to subsequent commands. 3-9 IMADDR YYYY IN Address Cycles: This is the 28-bit memory address. The addresses transfer most-significant nibble first and leastsignificant nibble last. (i.e., A27 - 24 on FWH[3:0] first, and A3 - A0 on FWH[3:0] last). 10 IMSIZE 0000 IN Memory Size Cycle: Indicates how many bytes will be or transferred during multi-byte operations. The IS49FL00x only support "0000b" for one byte operation. 11-12 DATA YYYY IN Data Cycles: The 8-bits data transferred with least-significant nibble first and most-significant nibble last. (i.e., I/O3 - I/O0 on LAD[3:0] first, then I/O7 - I/O4 on FWH[3:0] last). 13 TAR0 1111 IN then Float 14 TAR1 1111 (float) 15 RSYNC 0000 (READY) OUT 16 TAR0 1111 OUT then Float 17 TAR1 1111 (float) Float then Turn-Around Cycle 1: The Intel ICH resumes control of the bus during this cycle. IN Turn-Around Cycle 0: The Intel ICH has driven the bus then float it to all "1"s and then floats the bus. Float then Turn-Around Cycle 1: The device takes control of the bus during this cycle. OUT Ready Sync: The FWH device indicates that it has received the data or command. Turn-Around Cycle 0: The FWH device has driven the bus then float it to all "1"s and then floats the bus. FWH MEMORY WRITE CYCLE WAVEFORMS C LK RST# or INIT# FWH4 Memor y Write Start FWH[3:0] 1110b 1 Clock Address IDSEL ID[3:0] xxxxb x1xxb 1 Clock A[19:16] A[15:12] IMSIZE A[11:8] A[7:4] Load Address in 7 Clocks From Host to Device A[3:0] 0000b Data D[3:0] TAR D[7:4] 1 Clock Load Data in 2 Clocks 1111b Tri-State 2 Clocks RSY NC 0000b TAR 1111b Tri-State 1 Clock 2 Clocks From Device to Host Next Start 1110b 1 Clock 14 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T FWH MODE OPERATION (CONTINUED) FWH BYTE PROGRAM WAVEFORMS CLK RST# or INIT# FWH4 Memor y Write Cycle FWH[3:0] Address IDSEL 1110b ID[3:0] 1 Clock 1 Clock xxxxb x1xxb xxxxb 0101b Data IMSIZE 0101b Load "5555h" in 7 Clocks 0101b 0101b 0000b 1010b TAR 1010b 1 Clock Load "AAh" in 2 Clocks Host to Device 1111b Tri-State 2 Clocks RSYN C 0000b 1 Clock TAR 1111b Tri-State 2 Clocks Device to Host CLK RST# or INIT# FWH4 FWH[3:0] 2nd Start IDSEL 1110b ID[3:0] 1 Clock 1 Clock IMSIZE Address xxxxb x1xxb xxxxb 0010b 1010b Load "2AAAh" in 7 Clocks 1010b 1010b 000 0b Data 0101b TAR 0101b 1 Clock Load "55h" in 2 Clocks Host to Device 1111b Tri-State 2 Clocks RSY NC 1 Clock TAR 1111b 0000b Tri-State 2 Clocks Device to Host CLK RST# or INIT# FWH4 FWH[3:0] 3rd Start IDSEL 1110b ID[3:0] 1 Cloc k 1 Clock IMSIZE Address xxxxb x1xxb xxxxb 0101b 0101b Load "5555h" in 7 Clocks 0101b 010 1b 0000b Data 0000b TAR 1010b 1 Clock Load "A0h" in 2 Clocks Host to Device 1111b Tri-State 2 Clocks RSY NC 0 000b 1 Clock TAR 1111b Tri-State 2 Clocks Device to Host CLK RST# or INIT# FWH4 FWH[3:0] 4th Start IDSEL 1110b ID[3:0] 1 Cloc k 1 Clock IMSIZE Address xxxxb x1xxb A[19:16] A[15:12] A[11:8] Load Address in 7 Clocks A[7:4] Host to Device A[3:1] 0000b Data D[3:0] TAR D[7:4] 1 Clock Load Data in 2 Clocks 1111b Tri-State 2 Clocks RSY NC 00 00b 1 Clock TAR 1111b Tri-State 2 Clocks Device to Host 15 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T FWH SECTOR ERASE WAVEFORMS CLK RST# or INIT# FWH4 M em o r y W ri te C y cl e I D S E L F WH [3 :0 ] 1 1 10 b 1 C l oc k ID[3:0] A ddr es s xxxxb x1xxb 1 C l oc k xxxxb 0 1 0 1b D a ta IM S IZ E 0 1 0 1b Lo a d " 55 55 h" i n 7 C l oc k s 0 1 0 1b 0 1 0 1b H os t to D ev ic e 0 0 0 0b 1 0 1 0b TA R 1 0 1 0b 1 C l oc k Loa d "A A h" i n 2 C l oc k s 1 1 1 1b T r i -S tat e 2 C l oc k s RS YNC 0 0 0 0b 1 C l oc k TAR 1 1 1 1b T r i -S tate 2 C l oc k s D ev ic e to H os t CLK RST# or INIT# FWH4 2nd S tar t F WH [3 :0 ] 1 1 10 b 1 C l oc k A ddr es s IDSE L ID[3:0] xxxxb x1xxb 1 C l oc k xxxxb 0 01 0 b IM S IZ E 1 01 0 b Lo ad " 2A A A h " i n 7 C l oc k s 1 01 0 b 1 01 0 b H os t to D evi c e 0 0 00 b D a ta 0 10 1 b TA R 0 10 1 b 1 C l oc k Load "55 h" i n 2 C l oc k s 1 11 1 b T r i -S tat e 2 C l oc k s RS YNC 1 C l oc k TAR 1 11 1 b 0 0 0 0b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# FWH4 F WH [3 :0 ] 3r d S tar t IDSE L 1 1 10 b ID[3:0] 1 C l oc k A ddr es s xxxxb x1xxb 1 C l oc k xxxxb 0 10 1 b IM S IZ E 0 10 1 b Lo ad " 5 55 5h " i n 7 C l oc k s 0 10 1 b 0 10 1 b H os t to D evi c e 0 00 0 b D a ta 0 00 0 b TAR 1 00 0 b 1 C l oc k Load "80h " i n 2 C l oc ks 1 11 1 b T r i -S tat e 2 C l oc k s RSY NC 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# FWH4 F WH [3 :0 ] 4th S tar t IDSE L 1 1 10 b ID[3:0] 1 C l oc k A ddr es s xxxxb x1xxb 1 C l oc k xxxxb 0 10 1 b IM S IZ E 0 10 1 b Loa d " 55 5 5" i n 7 C l oc k s 0 10 1 b 0 1 01 b H os t to D evi c e 0 00 0 b D a ta 0 10 1 b TAR 1 01 0 b 1 C l oc k Load "A A h" i n 2 C l oc ks 1 11 1 b T r i -S tat e 2 C l oc k s RSY NC 1 C l oc k TAR 1 11 1 b 0 0 0 0b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# FWH4 F WH [3 :0 ] 5th S tar t IDSE L 1 1 10 b ID[3:0] 1 C l oc k A ddr es s xxxxb x1xxb 1 C l oc k xxxxb 0 01 0 b IM S IZ E 0 01 0 b Lo ad " 2A A A h " i n 7 C l oc k s 1 01 0 b 1 01 0 b H os t to D evi c e 0 00 0 b D a ta 0 10 1 b TAR 0 10 1 b 1 C l oc k Load "55h " i n 2 C l oc ks 1 11 1 b T r i -S tat e 2 C l oc k s RSY NC 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# FWH4 6th S tar t FW H[ 3: 0 ] 11 1 0b 1 C l oc k ID[3:0] IM S IZ E A ddr es s IDSE L xxxxb x1xxb 1 C l oc k Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 xxxxb SA[19:16] S A [ 1 5: 1 2 ] xxxxb xxxxb L oa d S ec t or A ddr es s i n 7 C l oc k s H os t to D evi c e 0 00 0 b D a ta 0 00 0 b TAR 0 01 1 b S A = S ec tor A ddr es s 1 11 1 b T r i -S tat e 1 C l oc k RSY NC 0 0 0 0b Load "30h" i n 2 C l oc k s TAR 1 11 1 b Inter nal Er as e S tar t T r i -S tate 16 IS49FL004T 2 C l oc k s 1 C l oc k 2 C lo c k s D ev ic e to H os t 17 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T FWH BLOCK ERASE WAVEFORMS CLK RST# or INIT# FWH4 M em o r y W ri te C y cl e I D S E L F WH [3 :0 ] 1 1 10 b 1 C l oc k ID[3:0] A ddr es s xxxxb x1xxb 1 C l oc k xxxxb 0 1 0 1b D a ta IM S IZ E 0 1 0 1b L oa d " 55 55 h " i n 7 C l oc k s 0 1 0 1b 0 1 0 1b H os t to D ev ic e 0 0 0 0b 1 0 1 0b TA R 1010b 1 C l oc k Loa d "A A h" i n 2 C l oc k s 1 1 1 1b T r i -S tat e 2 C l oc k s RSY NC 0 0 0 0b 1 C l oc k TAR 1 1 1 1b T r i -S tate 2 C l oc k s D ev ic e to H os t CLK RST# or INIT# FWH4 2nd S tar t F WH [3 :0 ] 1 1 10 b 1 C l oc k A ddr es s IDSEL ID[3:0] xxxxb x1xxb 1 C l oc k xxxxb 0 01 0 b IM S IZ E 1 01 0 b Lo ad "2A A A h " i n 7 C l oc k s 1 01 0 b 1 01 0 b H os t to D evi c e 0 0 00 b D a ta 0 10 1 b TA R 0 10 1 b 1 C l oc k Load "55 h" i n 2 C l oc k s 1 11 1 b T r i -S tat e 2 C l oc k s RSY NC 1 C l oc k TAR 1 11 1 b 0 00 0 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# FWH4 F WH [3 :0 ] 3r d S tar t IDSE L 1 1 10 b ID[3:0] 1 C l oc k A ddr es s xxxxb x1xxb 1 C l oc k xxxxb 0 10 1 b IM S IZ E 0 10 1 b Lo ad "5 55 5h " i n 7 C l oc k s 0 10 1 b 0 10 1 b H os t to D evi c e 0 00 0 b D a ta 0 00 0 b TAR 1 0 00 b 1 C l oc k Load "80h " i n 2 C l oc ks 1 11 1 b T r i -S tat e 2 C l oc k s RS YNC 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# FWH4 F WH [3 :0 ] 4th S tar t IDSE L 1 1 10 b ID[3:0] 1 C l oc k A ddr es s xxxxb x1xxb 1 C l oc k xxxxb 0 10 1 b IM S IZ E 0 10 1 b Loa d " 55 5 5" i n 7 C l oc k s 0 10 1 b 0 1 0 1b H os t to D evi c e 0 00 0 b D a ta 0 10 1 b TAR 1 01 0 b 1 C l oc k Load "A A h" i n 2 C l ock s 1 11 1 b T r i -S tat e 2 C l oc k s RS YNC 1 C l oc k TAR 1 11 1 b 0 00 0 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# FWH4 F WH [3 :0 ] 5th S tar t IDSE L 1 1 10 b ID[3:0] 1 C l oc k A ddr es s xxxxb x1xxb 1 C l oc k xxxxb 0 01 0 b IM S IZ E 0 01 0 b Lo ad "2A A A h " i n 7 C l oc k s 1 01 0 b 1 01 0 b H os t to D evi c e 0 00 0 b D a ta 0 10 1 b TAR 0 1 01 b 1 C l oc k Load "55h " i n 2 C l oc ks 1 11 1 b T r i -S tat e 2 C l oc k s RS YNC 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# FWH4 6th S tar t FW H[ 3: 0 ] 11 1 0b 1 C l oc k ID[3:0] IM S IZ E A ddr es s IDSE L xxxxb x1xxb 1 C l oc k Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 xxxxb BA[19:16] B A [ 1 5: 1 4 ] + xxb Lo a d B l oc k A ddr es s i n 7 C l oc k s xxxxb xxxxb 0 00 0 b D a ta 0 00 0 b TAR 0 10 1 b H os t to D evi c e 1 1 1 1b B T r i -S tat e RS YNC 0 0 0 0b A TAR 1 1 1 1b Inter nal Er as e S tar t T r i -S tate 18 IS49FL004T = B l oc k A ddr es s 1 C l oc k Load "50h " i n 2 C l oc ks 2 C l oc k s 1 C l oc k 2 C l oc k s D ev ic e to H os t 19 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T FWH MODE OPERATION (CONTINUED) FWH GPI REGISTER READ WAVEFORMS C LK RST# or INIT# FWH4 Memor y Read Cycle FWH[3:0] IDSEL 1101b ID[3:0] 1 Clock 1 Clock Address xxxxb x0xxb 1100b 0000b IMSIZE 0001b 0000b 0000b 0000b 1 Clock Load Address "xBC0100h" in 7 Clocks From Host to Device TAR 1111b Tri-State RSY N C Data D[7:4] TAR 1111b Tri-State 0000b D[3:0] 2 Clocks 1 Clock Data Out 2 Clocks 2 Clocks From Device to Host TAR RSY N C Next Start 1101b 1 Clock FWH BLOCK LOCKING REGISTER READ WAVEFORMS C LK RST# or INIT# FWH4 FWH[3:0] Memor y Read Cycle IDSEL 1101b ID[3:0] 1 Cloc k Address xxxxb x0xxb 1 Clock A[19:16] 0000b IMSIZE 0000b 0000b Load Address "xBx0002h" in 7 Clocks From Host to Device 0010b 0000b 1 Clock 1111b Tri-State 2 Clocks 0000b 1 Clock Data D[3:0] TAR D[7:4] 1111b Tri-State Data Out 2 Clocks 2 Clocks From Device to Host Next Start 1101b 1 Clock 20 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T LPC MODE OPERATION LPC MODE MEMORY READ/WRITE OPERATION In LPC mode, the IS49FL002/004 use the 5-pin LPC interface includes 4-bit LAD[3:0] and LFRAME# pins to communicate with the host system. The addresses and data are transmitted through the 4-bit LAD[3:0] bus synchronized with the input clock on CLK pin during a LPC memory cycle operation. The address or data on LAD[3: 0] bus is latched on the rising edge of the clock. The pulse of LFRAME# signal inserted for one or more clocks indicates the start of a LPC memory read or write cycle. Once the LPC memory cycle is started, asserted by LFRAME#, a START value “0000b” is expected by the devices as a valid command cycle. Then a CYCTYPE + DIR value (“010xb” for memory read cycle or “011xb” for memory write cycle) is used to indicates the type of memory cycle. Refer to Table 4 and 5 for LPC Memory Read and Write Cycle Definition. There are 8 clock fields in a LPC memory cycle that gives a 32 bit memory address A31 - A0 through LAD[3: 0] with the most-significant nibble first. The memory space of IS49FL002/004 are mapped directly to top of 4 Gbyte system memory space. See Table 11 for System Memory Map. The IS49FL002 is mapped to the address location of (FFFFFFFFh - FFFC0000h), the A31- A18 must be loaded with “1” to select and activate the device during a LPC memory read or write operation. Only A17 - A0 is used to decode and access the 256 Kbyte memory. The I/O7 - I/O0 data is loaded onto LAD[3:0] in 2 clock cycles with least-significant nibble first and most-significant nibble last. The IS49FL004 is mapped to the address location of (FFFFFFFFh - FFF80000h), the A31- A19 must be loaded with “1” to select and activate the device during a LPC memory operation. Only A18 - A0 is used to decode and access the 512 Kbyte memory. 21 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T LPC MODE OPERATION (CONTINUED) Table 4: LPC Memory Read Cycle Definition Clock Cycle Field LAD[3:0] Direction 1 START 0000 IN Start of Cycle: "0000b" indicates the start of a LPC memory cycle. 2 CYCTYPE + DIR IN Cycle Type: Indicates the type of a LPC memory read cycle. CYCTYPE: Bits 3 - 2 must be "01b" for memory cycle. DIR: Bit 1 = "0b" indicates the type of cycle for Read. Bit 0 is reserved. Address Cycles: This is the 32-bit memory address. The addresses transfer most-significant nibble first and leastsignificant nibble last. (i.e., A31 - 28 on LAD[3:0] first, and A3 - A0 on LAD[3:0] last). 010x Description 3 - 10 ADDR YYYY IN 11 TAR0 1111 IN then Float 12 TAR1 1111 (float) 13 SYNC 0000 OUT Sync: The device indicates the least-significant nibble of data byte will be ready in next clock cycle. 14 - 15 DATA YYYY OUT Data Cycles: The 8-bits data transferred with least-significant nibble first and most-significant nibble last. (i.e., I/O3 - I/O0 on LAD[3:0] first, then I/O7 - I/O4 on LAD[3:0] last). 16 TAR0 1111 OUT then Float 17 TAR1 1111 (float) Float then Turn-Around Cycle 1: The Chipset resumes control of the bus during this cycle. IN Turn-Around Cycle 0: The Chipset has driven the bus to all "1"s and then float the bus. Float then Turn-Around Cycle 1: The device takes control of the bus during this cycle. OUT Turn-Around Cycle 0: The device has driven the bus to all "1"s and then floats the bus. LPC MEMORY READ CYCLE WAVEFORMS C LK RST# or INIT# LFR AME # LAD[3:0] Start Memor y Read Cycle 0000b 010Xb 1 Clock 1 Clock Address 1111b 1111b 1111b 11b + A[17:16] TAR A[15:12] Load Address in 8 Clocks From Host to Device A[11:8] A[7:4] A[3:0] 1111b Tri-State 2 Clocks SYN C Data D[7:4] TAR 0000b D[3:0] 1 Clock Data Out 2 Clocks 2 Clocks From Device to Host 1111b Tri-State Next Start 0000b 1 Clock 22 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T LPC MODE OPERATION (CONTINUED) Table 5: LPC Memory Write Cycle Definition Clock Cycle Field LAD[3:0] Direction 1 START 0000 IN Start of Cycle: "0000b" to indicate the start of a LPC memory cycle. 2 CYCTYPE + DIR IN Cycle Type: Indicates the type of a LPC memory write cycle. CYCTYPE: Bits 3 - 2 must be "01b" for memory cycle. DIR: Bit 1 = "1b" indicates the type of cycle for Write. Bit 0 is reserved. 011x Description 3 - 10 ADDR YYYY IN Address Cycles: This is the 32-bit memory address. The addresses transfer most-significant nibble first and leastsignificant nibble last. (i.e., A31 - 28 on LAD[3:0] first, and A3 - A0 on LAD[3:0] last). 11 - 12 DATA YYYY IN Data Cycles: The 8-bits data transferred with least-significant nibble first and most-significant nibble last. (i.e., I/O3 - I/O0 on LAD[3:0] first, then I/O7 - I/O4 on LAD[3:0] last). 13 TAR0 1111 IN then Float 14 TAR1 1111 (float) 15 SYNC 0000 OUT Sync: The device indicates that it has received the data or command. 16 TAR0 1111 OUT then Float Turn-Around Cycle 0: The device has driven the bus to all "1"s and then floats the bus. 17 TAR1 1111 (float) Float then Turn-Around Cycle 1: The Chipset resumes control of the bus during this cycle. IN Turn-Around Cycle 0: The Chipset has driven the bus to all "1"s and then float the bus. Float then Turn-Around Cycle 1: The device takes control of the bus during this cycle. OUT LPC MEMORY WRITE CYCLE WAVEFORMS C LK RST# or INIT# LFR AME # LAD[3:0] Start Memor y Write Cycle 0000b 011Xb 1 Clock 1 Clock Address 1111b 1111b 111 1b A[19:16] Data A[15:12] A[11:8] Load Address in 8 Clocks From Host to Device A[7:4] A[3:0] D[3:0] TAR D[7:4] Load Data in 2 Clocks 1111b Tri-State 2 Clocks SYNC 0000b TAR 1111b Tri-State 1 Clock 2 Clocks From Device to Host Next Start 0000b 1 Clock 23 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T LPC MODE OPERATION (CONTINUED) LPC BYTE PROGRAM WAVEFORMS CLK RST# or INIT# L F RA M E # 1st Start LAD[3:0] 0000b 1 Clock Memor y Write Cycle 011Xb Address 1111b 1111b 1 Clock 1111b 11xxb Data 0101b Load "5555h" in 8 Clocks 0101b 0101b 0101b 1010b TAR 1010b Load "AAh" in 2 Clocks Host to Device 1111b Tri-State 2 Clocks Sync 0000b 1 Clock TAR 1111b Tri-State 2 Clocks Device to Host CLK RST# or INIT# L F RA M E # LAD[3:0] 2nd Start Memor y Write Cycle 0000b 011Xb 1 Cloc k Address 1111b 1111b 1 Clock 111 1b 11xxb Data 0010b Load "2AAAh" in 8 Clocks 1010b 1010b 101 0b 0101b TAR 0101b Load "55h" in 2 Clocks Host to Device 1111b Tri-State 2 Clocks Sync 0000b 1 Clock TAR 1111b Tri-State 2 Clocks Device to Host CLK RST# or INIT# L F RA M E # 3rd Start LAD[3:0] 0000b 1 Cloc k Memor y Write Cycle 011Xb Address 1111b 1111b 1 Clock 111 1b 11xxb Data 0101b Load "5555h" in 8 Clocks 0101b 010 1b 0101b 0000b TAR 1010b Load "A0h" in 2 Clocks Host to Device 1111b Tri-State 2 Clocks Sync 0 000b 1 Clock TAR 1111b Tri-State 2 Clocks Device to Host CLK RST# or INIT# L F RA M E # LAD[3:0] 4th Start Memor y Write Cycle 0000b 011Xb 1 Cloc k Address 1111b 1111b 1 Clock 111 1b A[19:16] Data A[15:12] Load Address in 8 Clocks A[11:8] A[7:4] Host to Device A[3:1] D[3:0] TAR D[7:4] Load Data in 2 Clocks 1111b Tri-State 2 Clocks Sync 00 00b 1 Clock TAR 1111b Tri-State 2 Clocks Device to Host 24 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T LPC SECTOR ERASE WAVEFORMS CLK RST# or INIT# LFRAME# 1s t S tar t LAD[3:0] M em o r y W r i te C y cl e 0000b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1111b 1 1 1 1b 1111b 11x x b D a ta 0 1 0 1b L oa d " 55 55 h " i n 8 C l oc k s 0 1 0 1b 0 1 0 1b 0 1 0 1b 1 0 1 0b TA R 1010b Load "A A h" i n 2 C l oc k s H os t to D ev ic e 1 1 1 1b T r i -S tat e 2 C l oc k s S y nc 0 0 0 0b 1 C l oc k TAR 1 1 1 1b T r i -S tate 2 C l oc k s D ev ic e to H os t CLK RST# or INIT# LFRAME# LAD[3:0] 2nd S tar t M em o r y W r i te C yc l e 0 00 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1 1 1 1b 1 11 1 b 1 1 1 1b 11x x b D a ta 0 01 0 b Lo ad "2A A A h " i n 8 C l oc k s 1 01 0 b 1 01 0 b 1 0 10 b 0 10 1 b TAR 0 10 1 b Load "55 h" i n 2 C l ock s H os t to D evi c e 1 11 1 b T r i -S tat e 2 C l oc k s S y nc 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# LFRAME# 3r d S tar t LAD[3:0] M em or y W r i te C yc l e 0 00 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1 1 1 1b 1 11 1 b 1 1 1 1b 11x x b D a ta 0 10 1 b Lo ad "5 55 5h " i n 8 C l oc k s 0 10 1 b 0 10 1 b 0 10 1 b 0 00 0 b TAR 1 0 00 b Loa d "80h " i n 2 C l oc k s H os t to D evi c e 1 11 1 b T r i -S tat e 2 C l oc k s S y nc 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# LFRAME# LAD[3:0] 4th S tar t M em or y W r i te C yc l e 0 00 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1 1 1 1b 1 11 1 b 1 1 1 1b 11x x b D a ta 0 10 1 b Loa d " 55 5 5" i n 8 C l oc k s 0 10 1 b 0 1 0 1b 0 10 1 b 0 10 1 b TAR 1 01 0 b Load "A A h" i n 2 C l oc k s H os t to D evi c e 1 11 1 b T r i -S tat e 2 C l oc k s S y nc 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# LFRAME# 5th S tar t LAD[3:0] M em or y W r i te C yc l e 0 00 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1 1 1 1b 1 11 1 b 1 1 1 1b 11x x b D a ta 0 01 0 b Lo ad "2A A A h " i n 8 C l oc k s 1 01 0 b 1 01 0 b 1 01 0 b H os t to D evi c e 0 10 1 b TAR 0 1 01 b 1 11 1 b T r i -S tat e Load "55 h" i n 2 C l ock s 2 C l oc k s D a ta TA R S y nc 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# LFRAME# 6th S tar t LAD[3:0] 000 0 b 1 C l oc k M em or y W r i te C yc l e 0 1 1X b A ddr es s 1 1 11 b 1 11 1 b 1 C l oc k Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 1 1 1 1b SA[19:16] SA[15:12] Lo ad S ec tor A d dr es s i n 8 C l oc k s xxxxb xxxxb xxxxb 0 0 0 0b 0 0 1 1b Load "30h " i n 2 C l oc k s 1 1 1 1b T r i -S tat e 2 C l oc k s S y nc 0 0 0 0b 1 C l oc k TAR 1 1 1 1b Inter nal Er as e S tar t T r i -S tate 2 C l oc k s 25 H os t to D evi c e IS49FL004T D evi c e to H os t S A = S ec tor A ddr es s 26 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T LPC BLOCK ERASE WAVEFORMS CLK RST# or INIT# LFRAME# 1s t S tar t LAD[3:0] M em o r y W r i te C y cl e 0000b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1111b 1 1 1 1b 1111b 11x x b D a ta 0 1 0 1b L oa d " 55 55 h " i n 8 C l oc k s 0 1 0 1b 0 1 0 1b 0 1 0 1b 1 0 1 0b TA R 1010b Load "A A h" i n 2 C l oc k s H os t to D ev ic e 1 1 1 1b S y nc T r i -S tat e 2 C l oc k s 0 0 0 0b 1 C l oc k TAR 1 1 1 1b T r i -S tate 2 C l oc k s D ev ic e to H os t CLK RST# or INIT# LFRAME# LAD[3:0] 2nd S tar t M em o r y W r i te C yc l e 0 00 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1 1 1 1b 1 11 1 b 1 1 1 1b 11x x b D a ta 0 01 0 b Lo ad "2A A A h " i n 8 C l oc k s 1 01 0 b 1 01 0 b 1 0 10 b 0 10 1 b TA R 0 10 1 b Load "55 h" i n 2 C l ock s H os t to D evi c e 1 11 1 b T r i -S tat e 2 C l oc k s S y nc 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# LFRAME# 3r d S tar t LAD[3:0] M em or y W r i te C yc l e 0 00 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1 1 1 1b 1 11 1 b 1 1 1 1b 11x x b D a ta 0 10 1 b Lo ad "5 55 5h " i n 8 C l oc k s 0 10 1 b 0 10 1 b 0 10 1 b 0 00 0 b TAR 1 0 00 b Loa d "80h " i n 2 C l oc k s H os t to D evi c e 1 11 1 b S y nc T r i -S tat e 2 C l oc k s 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# LFRAME# LAD[3:0] 4th S tar t M em or y W r i te C yc l e 0 00 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1 1 1 1b 1 11 1 b 1 1 1 1b 11x x b D a ta 0 10 1 b Loa d " 55 5 5" i n 8 C l oc k s 0 10 1 b 0 1 0 1b 0 10 1 b 0 10 1 b TAR 1 01 0 b Load "A A h" i n 2 C l oc k s H os t to D evi c e 1 11 1 b T r i -S tat e 2 C l oc k s S y nc 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# LFRAME# 5th S tar t LAD[3:0] M em or y W r i te C yc l e 0 00 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1 1 1 1b 1 11 1 b 1 1 1 1b 11x x b D a ta 0 01 0 b Lo ad "2A A A h " i n 8 C l oc k s 1 01 0 b 1 01 0 b 1 01 0 b H os t to D evi c e 0 10 1 b TAR 0 1 01 b 1 11 1 b S y nc T r i -S tat e Load "55 h" i n 2 C l ock s 2 C l oc k s D a ta TAR 0 00 0 b 1 C l oc k TAR 1 11 1 b T r i -S tate 2 C l oc k s D evi c e to H os t CLK RST# or INIT# LFRAME# LAD[3:0] 6th S tar t M em or y W r i te C yc l e 000 0 b 0 1 1X b 1 C l oc k 1 C l oc k A ddr es s 1111b 1 1 1 1b Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 1 1 11 b BA[19:16] B A [ 1 5: 1 4 ] + xxb Lo a d B l oc k A ddr es s i n 8 C l oc k s xxxxb xxxxb xxxxb 0 0 0 0b 0 10 1 b Load "50h " i n 2 C l oc k s 1 11 1 b H o T r i -S tat e S y nc 0 00 0 b s t TAR 1 11 1 b Inter nal Er as e S tar t T r i -S tate 27 to D ev ic e B A = B l oc k A d dr es s IS49FL004T 2 C l oc k s 1 C l oc k 2 C l oc k s D ev ic e to H os t 28 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T LPC MODE OPERATION (CONTINUED) LPC GPI REGISTER READ WAVEFORMS C LK RST# or INIT# LFR AME # LAD[3:0] Start Memor y Read Cycle 0000b 010Xb 1 Cloc k Address 1111b 1111b 1 Clock 1011b 1100b TAR 0000b 0001b Load Address "FFBC0100h" in 8 Clocks From Host to Device 0000b 0000b 1111b Tri-State 2 Clocks SYN C 0000b 1 Clock Data D[3:0] TAR D[7:4] 1111b Tri-State Data Out 2 Clocks 2 Clocks From Device to Host Next Start 0000b 1 Clock 29 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T REGISTERS The IS49FL002/004 have two registers include the General Purpose Inputs Register (GPI_REG - available in FWH and LPC modes) and the Block Locking Register (BL_REG - available in FWH mode only). The GPI_REG can be read at FFBC0100h in the 4 Gbyte system memory map. And the BL_REG can be read through FFBx0002h where x = F - 0h. See Table 8 and 9 for the address of BL_REG. GENERAL PURPOSE INPUTS REGISTER The IS49FL002/004 contain an 8-bit General Purpose Inputs Register (GPI_REG) available in FWH and LPC modes. Only Bit 4 to Bit 0 are used in current version and Bit 7 to Bit 5 are reserved for future use. The GPI_REG is a pass-through register with the value set by GPI[4:0] pin during power-up. The GPI_REG is used for system design purpose only, the devices do not use this register. This register is read only and can be read at address location FFBC0100h in the 4 GByte system memory map through a memory read cycle. Refer to Table 6 for General Purpose Input Register Definition. BLOCK LOCKING REGISTERS The devices support block read-lock, write-lock, and lockdown features through a set of Block Locking Registers. Each memory block has an associated 8-bit read/writable block locking register. Only Bit 2 to Bit 0 are used in current version and Bit 7 to Bit 3 are reserved for future use. The default value of BL_REG is “01h” at power up. The definition of BL_REG is listed in Table 7. The FWH Register Configuration Map of IS49FL002 is shown in Table 8. The FWH Register Configuration Map of IS49FL004 is shown in Table 9. Unused register will be read as 00h. Table 6. General Purpose Inputs Register Definition Bit Bit Name 7:5 Function 32-PLCC Pin# 32-VSOP Pin# Reserved - - 4 GPI4 GPI_REG Bit 4 30 6 3 GPI3 GPI_REG Bit 3 3 11 2 GPI2 GPI_REG Bit 2 4 12 1 GPI1 GPI_REG Bit 1 5 13 0 GPI0 GPI_REG Bit 0 6 14 30 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T REGISTERS (CONTINUED) Table 7. Block Locking Register Definition Bit 7:3 Function Reserved 2 Read-Lock "1" = Prevents read operations in the block where set. "0" = Normal operation for reads in the block where clear. Default state. 1 Lock-Down "1" = Prevents further set or clear operations to the Write-Lock and Read-Lock bits. LockDown only can be set, but not cleared. The block will remain locked-down until reset (with RST# or INIT#), or until the device is power-on reset. "0" = Normal operation for Write-Lock and Read-Lock bit altering in the block where clear. Default state. 0 Write-Lock "1" = Prevents program or erase operations in the block where set. Default state. "0" = Normal operation for programming and erase in the block where clear. Data Bit[7:3] Bit 2 Bit 1 Bit 0 Resulting Block State 00h 00000 0 0 0 Full access. 01h 00000 0 0 1 Write locked. Default state at power-up. 02h 00000 0 1 0 Locked open (full access locked down). 03h 00000 0 1 1 Write-locked down. 04h 00000 1 0 0 Read locked. 05h 00000 1 0 1 Read and write locked. 06h 00000 1 1 0 Read-locked down. 07h 00000 1 1 1 Read-locked and write-locked down. 31 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T REGISTERS (CONTINUED) Table 8. IS49FL002 Block Locking Register Address Register Block Size (Kbytes) Protected Block Address Range Memory Map Address T_BLOCK_LK 16 3C000h - 3FFFFh FFBF8002h T_MINUS01_LK 16 16 16 38000h - 3BFFFh 34000h - 37FFFh 30000h - 33FFFh FFBF0002h T_MINUS02_LK 16 16 2C000h - 2FFFFh 28000h - 2BFFFh FFBE8002h T_MINUS03_LK 16 16 24000h - 27FFFh 20000h - 23FFFh FFBE0002h T_MINUS04_LK 16 16 1C000h - 1FFFFh 18000h - 1BFFFh FFBD8002h T_MINUS05_LK 16 16 14000h - 17FFFh 10000h - 13FFFh FFBD0002h T_MINUS06_LK 16 16 0C000h - 0FFFFh 08000h - 0BFFFh FFBC8002h T_MINUS07_LK 16 16 04000h - 07FFFh 00000h - 03FFFh FFBC0002h Table 9. IS49FL004 Block Locking Register Address Register Block Size (Kbytes) Protected Block Address Range Memory Map Address T_BLOCK_LK 64 70000h - 7FFFFh FFBF0002h T_MINUS01_LK 64 60000h - 6FFFFh FFBE0002h T_MINUS02_LK 64 50000h - 5FFFFh FFBD0002h T_MINUS03_LK 64 40000h - 4FFFFh FFBC0002h T_MINUS04_LK 64 30000h - 3FFFFh FFBB0002h T_MINUS05_LK 64 20000h - 2FFFFh FFBA0002h T_MINUS06_LK 64 10000h - 1FFFFh FFB90002h T_MINUS07_LK 64 00000h - 0FFFFh FFB80002h 32 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T A/A MUX MODE OPERATION are latched on the falling edge of R/C# pin. The column addresses (internal address A21 - A11) are latched on The IS49FL002/004 offers a Address/Address Multi- the rising edge of R/C# pin. The IS49FL002 uses A17 plexed (A/A Mux) mode for off-system operation, typi- - A0 internally to decode and access the 256 Kbytes cally on an EPROM Programmer, similar to a traditional memory space. The IS49FL004 use A18 - A0 Flash memory except the address input is multiplexed. respectively. In the A/A Mux mode, the programmer must drive the OE# pin to low (VIL) for read or WE# pins to low for write During a read operation, the OE# signal is used to conoperation. The devices have no Chip Enable (CE#) pin trol the output of data to the 8 I/O pins - I/O[7:0]. During for chip selection and activation as traditional Flash a write operation, the WE# signal is used to latch the memory. The R/C#, OE# and WE# pins are used to input data from I/O[7:0]. See Table 10 for Bus Operation activate the device and control the power. The 11 multi- Modes. plex address pins - A[10:0] and a R/C# pin are used to load the row and column addresses for the target memory location. The row addresses (internal address A10 - A0) A/A MUX MODE READ/WRITE OPERATION Table 10. A/A Mux Mode Bus Operation Modes Mode RST# OE# WE# Read VIH V IL VIH Write VIH V IH VIL X D IN Standby VIH V IH VIH X High Z Output Disable VIH V IH X X High Z Reset VIL X X X High Z Product Identification VIH VIL VIH Address X (1) A2 - A21 = X, A1 = VIL, A0 = VIL and A1 = VIH, A0 = VIH A2 - A21 = X, A1 = VIL , A0 = VIH I/O D OUT Manufacturer ID Device ID (2) (2) Notes: 1. X can be VIL or VIH. 2. Refer to Table 1 for the Manufacturer ID and Device ID of devices. 33 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T SYSTEM MEMORY MAP S ys tem M em or y (Top 4 MBy tes) FF FF FF FF h IS 4 9 F L 0 0 2 (2 Mbits) IS 4 9 F L 0 0 4 (4 Mbits) FFFC0000h IS 4 9 F L 0 0 8 (8 Mbits) FF F8 0 0 0 0 h FF F0 0 0 0 0 h Range for other FW H D ev i c e s FF C 0 00 0 0 h Table 11. System Memory Map 34 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T MEMORY BLOCKS AND ADDRESSES Table 12. IS49FL002 Sector/Block Address Table Hardware Protection Block Block Size (Kbytes) Sector Sector Size (Kbytes) Address Range TBL# Block 15 (Boot Block) 16 " " 3C000h - 3FFFFh Block 14 16 " " 38000h - 3BFFFh Block 13 16 " " 34000h - 37FFFh Block 12 16 " " 30000h - 33FFFh Block 11 16 " " 2C000h - 2FFFFh Block 10 16 " " 28000h - 2BFFFh Block 9 16 " " 24000h - 27FFFh Block 8 16 " " 20000h - 23FFFh Block 7 16 " " 1C000h - 1FFFFh Block 6 16 " " 18000h - 1BFFFh Block 5 16 " " 14000h - 17FFFh Block 4 16 " " 10000h - 13FFFh Block 3 16 " " 0C000h - 0FFFFh Block 2 16 " " 08000h - 0BFFFh Block 1 16 " " 04000h - 07FFFh Sector 3 4 03000h - 03FFFh Sector 2 4 02000h - 02FFFh Sector 1 4 01000h - 01FFFh Sector 0 4 00000h - 00FFFh WP# Block 0 16 35 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T MEMORY BLOCKS AND ADDRESSES (CONTINUED) Table 13. IS49FL004 Sector/Block Address Table Hardware Protection Block Block Size (Kbytes) Sector Sector Size (Kbytes) Address Range TBL# Block 7 (Boot Block) 64 " " 70000h - 7FFFFh Block 6 64 " " 60000h - 6FFFFh Block 5 64 " " 50000h - 5FFFFh Block 4 64 " " 40000h - 4FFFFh Block 3 64 " " 30000h - 3FFFFh Block 2 64 " " 20000h - 2FFFFh Block 1 64 " " 10000h - 1FFFFh Sector 15 4 0F000h - 0FFFFh : : : Sector 1 4 01000h - 01FFFh Sector 0 4 00000h - 00FFFh WP# Block 0 64 36 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T COMMAND DEFINITION Table 14. Software Data Protection Command Definition Command Sequence Bus Cycle 1st Bus Cycle Addr(2) Data 2nd Bus Cycle Addr Data 3rd Bus Cycle Addr Data 4th Bus Cycle Addr Data 5th Bus Cylce Addr Data 6th Bus Cycle Addr Data 1 Addr D OUT 6 5555h AAh 2AAAh 55h 5555h 80h 5555h AAh 2AAAh 55h 5555h 10h Sector Erase 6 5555h AAh 2AAAh 55h 5555h 80h 5555h AAh 2AAAh 55h SA (3) 30h Block Erase 6 5555h AAh 2AAAh 55h 5555h 80h 5555h AAh 2AAAh 55h BA (4) 50h Byte Program 4 5555h AAh 2AAAh 55h 5555h A0h Addr DIN Product ID Entry 3 5555h AAh 2AAAh 55h 5555h 90h 2AAAh 55h 5555h F0h Read Chip Erase (1) Product ID Exit (5) 3 5555h AAh Product ID Exit (5) 1 XXXXh F0h Notes: 1. Chip erase is available in A/A Mux Mode only. 2. Address A[15:0] is used for SDP command decoding internally and A15 must be “0” in FWH/LPC and A/A Mux modes. AMS - A16 = Don’t care where AMS is the most-significant address of IS49FL00x. 3. SA = Sector address to be erased. 4. BA = Block address to be erased. 5. Either one of the Product ID Exit command can be used. 37 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T DEVICE OPERATIONS FLOWCHARTS AUTOMATIC PROGRAMMING Start Load Data AAh to Addres s 5555h Load Data 55h to Addres s 2AAAh Load Data A 0h to Addres s 5555h Ad dre s s Increment Load Prog ram Data to Program Addres s I/O7 = Data? or I/O6 Stop Toggle? No Yes No Last Address ? Yes P ro gra mmi n g Completed Chart 1. Automatic Programming Flowchart 38 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T DEVICE OPERATIONS FLOWCHARTS (CONTINUED) AUTOMATIC ERASE Start Write Chip, Sector, or Block Erase Co m m a n d Data = FFh? or I/O6 Stop Toggle? No Yes Erasure Completed CHIP ERASE COMMAND SECTOR ERASE COMMAND Notes: 1. Please see Table 12 to Table 13 for Sector/Block Address Tables. 2. Only erase one sector or one block per erase operation. 3. When the TBL# pin is pulled low (VIL), the boot block will not be erased. BLOCK ERASE COMMAND Load Data AAh to Addres s 5555h Load Data AAh to Addres s 5555h Load Data AAh to Addres s 5555h Load Data 55h to Addres s 2AAAh Load Data 55h to Addres s 2AAAh Load Data 55h to Addres s 2AAAh Load Data 80h to Addres s 5555h Load Data 80h to Addres s 5555h Load Data 80h to Addres s 5555h Load Data AAh to Addres s 5555h Load Data AAh to Addres s 5555h Load Data AAh to Addres s 5555h Load Data 55h to Addres s 2AAAh Load Data 55h to Addres s 2AAAh Load Data 55h to Addres s 2AAAh Load Data 30h to (1,2,3) SA Load Data 50h to (1,2,3) BA Load Data 10h to Addres s 5555h (3) 39 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T Chart 2. Automatic Erase Flowchart 40 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T DEVICE OPERATIONS FLOWCHARTS (CONTINUED) SOFTWARE PRODUCT IDENTIFICATION ENTRY SOFTWARE PRODUCT IDENTIFICATION EXIT Load Data AAh to Addres s 5555h Load Data AAh to Addres s 5555h Load Data 55h to Addres s 2AAAh Load Data 55h to Addres s 2AAAh Load Data 90h to Addres s 5555h Load Data F0h to Addres s 5555h Enter Product Identification Mode (1,2) Exit Product Identification Mode (3) Load Data F0h to Addres s XXXXh or Exit Product Identification Mode (3) Notes: 1. After entering Product Identification Mode, the Manufacturer ID and the Device ID of IS49FL00x can be read. 2. Product Identification Exit command is required to end the Product Identification mode and return to standby mode. 3. Either Product Identification Exit command can be used, the device returns to standby mode. Chart 3. Software Product Identification Entry/Exit Flowchart 41 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T ABSOLUTE MAXIMUM RATINGS (1) Temperature Under Bias -55oC to +125oC Storage Temperature -65oC to +150oC Surface Mount Lead Soldering Temperature Input Voltage with Respect to Ground on All Pins Standard Package 240oC 3 Seconds Lead-free Package 260oC 3 Seconds (2) -0.5 V to VCC + 0.5 V All Output Voltage with Respect to Ground -0.5 V to VCC + 0.5 V V CC (2) -0.5 V to +6.0 V Notes: 1. Stresses under those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. The functional operation of the device or any other conditions under those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condition for extended periods may affected device reliability. 2. Maximum DC voltage on input or I/O pins are +6.25 V. During voltage transitioning period, input or I/O pins may overshoot to VCC + 2.0 V for a period of time up to 20 ns. Minimum DC voltage on input or I/O pins are -0.5 V. During voltage transitioning period, input or I/O pins may undershoot GND to -2.0 V for a period of time up to 20 ns. DC AND AC OPERATING RANGE Part Number IS49FL002 IS49FL004 Operating Temperature 0o C to 85oC 0o C to 85oC Vcc Power Supply 3.0 V - 3.6 V 3.0 V - 3.6 V 42 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T DC CHARACTERISTICS Symbol Parameter Condition Min Typ Max Units 100 A II Input Leakage Current for IC, V = 0 V to V , V = V IN CC CC CC max ID[3:0] pins ILI Input Leakage Current VIN = 0 V to VCC, VCC = VCC max A ILO Output Leakage Current VI/O = 0 V to VCC , VCC = VCC max A Standby VCC Current FWH4 or LFRAME# = VIH , (FWH/LPC Mode) f = 33 MHz; VCC = VCC max ISB Ready Mode VCC Current IRY (FWH/LPC Mode) ICC2 (FWH/LPC Mode) (1) A 10 mA 2 15 mA 7 20 mA FWH4 or LFRAME# = VIL, f = 33 MHz; IOUT = 0 mA, VCC = VCC max VCC Active Read Current ICC1 500 FWH4 or LFRAME# = VIL, f = 33 MHz; IOUT = 0 mA, VCC = VCC max VCC Program/Erase Current VIL Input Low Voltage -0.5 0.3 VCC V VIH Input High Voltage 0.7 VCC VCC + 0.5 V VOL Output Low Voltage IOL = 2.0 mA, VCC = VCC min 0.1 VCC V VOH Output High Voltage IOH = -100 mA, VCC = VCC min 0.9 VCC V Note: 1. Characterized but not 100% tested. AC CHARACTERISTICS PIN IMPEDANCE (VCC = 3.3 V, f = 1 MHz, T = 25°C ) Typ Max Units Conditions C I/O (1) I/O Pin Capacitance 12 pF VI/O = 0 V C IN (1) Input Capacitance 12 pF V IN = 0 V Pin Inductance 20 nH LPIN (2) Notes: 1. These parameters are characterized but not 100% tested. 2. Refer to PCI specification. 43 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T AC CHARACTERISTICS (CONTINUED) FWH/LPC INTERFACE AC INPUT/OUTPUT CHARACTERISTICS Symbol Parameter Condition 0 < VOUT < 0.3 VCC IOH (AC) Switching current high 0.3 VCC < VOUT < 0.9 VCC Min Max -12 VCC mA -17.1 (VCC - VOUT) mA Equation C (1) 0.7 VCC < VOUT < VCC (Test point) VOUT = 0.7 VCC VCC > VOUT > 0.6 VCC IOL (AC) Switching current low 0.6 VCC > VOUT > 0.1 VCC Units -32 VCC mA 16 VCC mA -17.1 (VCC - VOUT) mA 0.18 VCC > VOUT > 0 Equation D (1) (Test point) VOUT = 0.18 VCC 38 VCC mA ICL Low clamp current -3 < VIN < -1 ICH High clamp current VCC + 4 > VIN > VCC + 1 slewr (2) Output rise slew rate 0.2 VCC - 0.6 VCC load 1 4 V/ns slewf (2) Output fall slew rate 0.6 VCC - 0.2 VCC load 1 4 V/ns -25 + (VIN + 1) / 0.015 mA 25 + (VIN - VCC - 1) / 0.015 mA Notes: 1. See PCI specification. 2. PCI specification output load is used. FWH/LPC INTERFACE CLOCK CHARACTERISTICS Symbol Parameter Min Max Units tCYC Clock Cycle Time 30 ns tHIGH Clock High Time 11 ns tLOW Clock Low Time 11 ns Clock Slew Rate 1 INIT# or RST# Slew Rate 50 4 V/ns mV/ns 44 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T AC CHARACTERISTICS (CONTINUED) FWH/LPC INTERFACE CLOCK WAVEFORM tCY C tH I G H tL O W 0.5 V C C 0.6 V C C 0.4 V C C (mini mu m ) 0.3 V C C 0.2 V C C FWH/LPC INTERFACE MEASUREMENT CONDITION PARAMETERS Symbol Value Units V TH1 0.6 V CC V V TL1 0.2 V CC V V TEST 0.4 V CC V V MAX1 0.4 V CC V Input Signal Edge Rate 1 V/ns Note: 1. The input test environment is done with 0.1 VCC of overdrive over VIH and VIL. Timing parameters must be met with no more overdrive that this. VMAX specifies the maximum peak-to-peak waveform allowed for measuring input timing. Production testing may use different voltage values, but must correlate results back to these parameter. FWH/LPC MEMORY READ/WRITE OPERATIONS CHARACTERISTICS Symbol Parameter Min Max TCYC Clock Cycle Time 30 ns TSU Input Set Up Time 7 ns TH Input Hold Time 0 ns TVAL Clock to Data Out 2 TON Clock to Active Time (float to active delay) 2 TOFF Clock to Inactive Time (active to float delay) 11 Units ns ns 28 ns 45 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T AC CHARACTERISTICS (CONTINUED) FWH/LPC INPUT TIMING PARAMETERS CLK VTH V TEST tS U FWH[3:0] o r LAD[3:0] tH VTL V MAX INPUT VALID (Valid Input Data ) FWH/LPC OUTPUT TIMING PARAMETERS CLK V TH V TEST V TL t VAL FWH[3:0] or LAD[3:0] (Valid Outpu t Data) tO F F FWH[3:0] or LAD[3:0] (Float Outpu t Data) tO N 46 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T AC CHARACTERISTICS (CONTINUED) FWH/LPC RESET OPERATION CHARACTERISTICS Symbol Parameter Min Max Units 1 ms Reset Active Time to Clock Stable 100 s TRSTP Reset Pulse W idth 100 ns TRSTF Reset Active to Output Float Delay TPRST Reset Active Time to VCC Stable TKRST TRST (1) 50 ns 1 Reset Inactive Time to Input Active s Note: 1. There will be a 10 μs reset latency if a reset procedure is performed during a programming or erase operation. FWH/LPC RESET AC WAVEFORMS VCC TPRST CLK TKRST TRSTP RST #/INIT # TRST T R STF F WH[3:0] or LAD[3:0] F WH 4 or L F R A ME # A/A MUX MODE INPUT TEST MEASUREMENT CONDITION PARAMETERS 3.0 V Input 0.0 V 1.5 V AC M e as u re me n t Level A/A MUX MODE TEST LOAD CONDITION TO TESTER TO DUT CL Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 30 pF 47 IS49FL004T AC CHARACTERISTICS (CONTINUED) A/A MUX MODE READ OPERATIONS CHARACTERISTICS Symbol Parameter Min Max 270 Units ns t RC Read Cycle Time t ACC Address to Output Delay t RST RST# High to Row Address Set-up Time 1 ms t AS R/C# Address Set-up Time 45 ns t AH R/C# Address Hold Time 45 ns t OE OE# to Output Delay t DF OE# to Output High Z 0 t OH Output Hold from OE# or Address, whichever occured first 0 ns t VCS VCC Set-up Time 50 s 120 ns 50 ns 30 ns A/A MUX MODE READ OPERATIONS AC WAVEFORMS RST# tR C tR S T ADDRESS ROW ADDRESS tA S tA H C O L UM N A DD RES S tA S tA H R/C# tA C C OE# tO E tDF WE# tO H HIGH Z O U TP U T OUTPUT VAL ID tV C S V CC 48 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T AC CHARACTERISTICS (CONTINUED) A/A MUX MODE WRITE (PROGRAM/ERASE) OPERATIONS CHARACTERISTICS Symbol Parameter Min Max Units t RST RST# High to Row Address Set-up Time 1 ms t AS R/C# Address Set-up Time 50 ns t AH R/C# Address Hold Time 50 ns t CWH R/C# to WE# High Time 50 ns t OES OE# High Set-up Time 20 ns t OEH OE# High Hold Time 20 ns t DS Data Set-up Time 50 ns t DH Data Hold Time 5 ns t WP Write Pulse Width 100 ns t WPH Write Pulse Width High 100 ns t BP Byte Programming Time 40 s t EC Chip, Sector or Block Erase Cycle Time 80 ms t VCS VCC Set-up Time 50 s A/A MUX MODE WRITE OPERATIONS AC WAVEFORMS RST# tR C tR S T ADDRESS ROW ADDRESS tA S tA H C O L UM N A DD RES S tA S tA H R/C# tC W H tV C S tO E H OE# tO E S WE# O U TP U T HIGH Z V CC Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 tD S tDH I NP UT DATA 49 IS49FL004T AC CHARACTERISTICS (CONTINUED) A/A MUX MODE BYTE PROGRAM OPERATIONS AC WAVEFORMS 4-Byte Prog ram Com mand ADDRESS 55 55 2AAA tC W H tW P 55 55 R/C# B Y T E ADD RE S S tW P H tB P WE# OE# tD H tD S DATA AA 55 INP UT DATA A0 VAL ID DATA A/A MUX MODE CHIP ERASE OPERATIONS AC WAVEFORMS 6-Byte C hi p Erase Comm and ADDRESS 2AAA 5555 5555 2AAA 5555 5555 R/C# tC W H tW P tW P H tD S tD H tE C WE# OE# DATA IN AA 55 80 AA 55 10 50 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T AC CHARACTERISTICS (CONTINUED) A/A MUX MODE SECTOR/BLOCK ERASE OPERATIONS AC WAVEFORMS 6-Byte Bloc k Eras e Comm and ADDRESS 2AAA 55 55 55 55 2AAA 55 55 SECTOR OR BLOCK ADDRESS R/C# tC W H tW P tW P H tD S tD H tE C WE# OE# DATA IN AA 80 55 AA 55 30/50 A/A MUX MODE TOGGLE BIT AC WAVEFORMS ADDRESS ROW COLUMN R/C# WE# tO E H OE# tO E I/O6 D D Note: 1. Toggling OE# will operate Toggle Bit. 2. I/O6 may start and end from “1” or “0” in random. 51 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T AC CHARACTERISTICS (CONTINUED) A/A MUX MODE DATA# POLLING AC WAVEFORMS ADDRESS ROW COLUMN R/C# WE# tO E H OE# tO E I/O7 D D# D# D# D Note: Toggling OE# will operate Data# Polling. PROGRAM/ERASE PERFORMANCE Parameter Unit Typ Max Sector/Block Erase Time ms 50 80 From writing erase command to erase completion Chip Erase Time ms 50 80 From writing erase command to erase completion s 25 40 Excludes the time of four-cycle program command execution Byte Programming Time Remarks Note: These parameters are characterized but not 100% tested. RELIABILITY CHARACTERISTICS (1) Parameter Endurance Data Retention ESD - Human Body Model ESD - Machine Model Latch-Up Min Typ Unit Test Method 100,000 (2) Cycles JEDEC Standard A117 20 Years JEDEC Standard A103 2,000 >4,000 Volts JEDEC Standard A114 200 >400 Volts JEDEC Standard A115 100 + ICC1 mA JEDEC Standard 78 Notes: 1. These parameters are characterized but not 100% tested. 2. Preliminary specification only and will be formalized after cycling qualification test. Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 52 IS49FL004T PACKAGE TYPE INFORMATION 32V 32-Pin Thin Small Outline Package (VSOP - 8 mm x 14 mm)( measure in millimeters) 1.05 0.95 Pin 1 I.D. 0.27 0.17 8.10 7.90 0.50 BSC 0.15 0.05 12.50 12.30 14.20 13.80 1.20 MAX 0. 2 0 0. 1 0 0° 5° 0.25 0.70 0.50 32J 32-Pin Plastic Leaded Chip Carrier (measured in millimeters) 12.57 12.32 11.51 11.35 0 .74 X 30 ° 15.11 14.86 3.56 3.18 Pin 1 I.D. 14.05 13.89 SEAT I NG PLAN E 2.41 1.93 0.53 0.33 0.81 0.66 13.4 6 12.4 5 1.27 T yp. 53 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T TOP VIEW SIDE VIEW 54 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013 IS49FL004T ORDERING INFORMATION: Density 512K Frequency (MHz) Order Part Number Package IS49FLO00T 32-pin PLCC IS49FLO00T 32-pin PLCC 100 A* = A1, A2, A3, Automotive Temperature Ranges 55 Integrated Silicon Solution, Inc.- www.issi.com Rev. C 2/1/2013
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