IS49NLS18160-33B

IS49NLS93200,IS49NLS18160 288Mb (x9, x18) Separate I/O RLDRAM 2 Memory JANUARY 2020 FEATURES              400MHz DDR operation (800Mb/s/pin data rate) 14.4 Gb/s peak bandwidth (x18 Separate I/O at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz) 32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total each 32ms) 8 internal banks Non-multiplexed addresses (address multiplexing option available) SRAM-type interface Programmable READ latency (RL), row cycle time, and burst sequence length Balanced READ and WRITE latencies in order to optimize data bus utilization Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK.        Differential input clocks (CK, CK#) Differential input data clocks (DKx, DKx#) On-die DLL generates CK edge-aligned data and output data clock signals Data valid signal (QVLD) HSTL I/O (1.5V or 1.8V nominal) 25-60Ω matched impedance outputs 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O On-die termination (ODT) RTT IEEE 1149.1 compliant JTAG boundary scan Operating temperature: Commercial (TC = 0° to +95°C; TA = 0°C to +70°C), Industrial (TC = -40°C to +95°C; TA = -40°C to +85°C) OPTIONS  Package:  144-ball WBGA (lead-free)  Configuration:  32Mx9  16Mx18 Clock Cycle Timing:  Speed Grade -25E -25 -33 Unit tRC 15 20 20 ns tCK 2.5 2.5 3.3 ns Copyright © 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances RLDRAM is a registered trademark of Micron Technology, Inc. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 1 IS49NLS93200,IS49NLS18160 1 Package Ballout and Description 1.1 288Mb (32Mx9) Separate I/O BGA Ball-out (Top View) 1 2 3 4 9 10 11 12 A VREF VSS VEXT VSS VSS VEXT TMS TCK B VDD DNU3 DNU3 VSSQ VSSQ Q0 D0 VDD C VTT 3 DNU 3 DNU VDDQ VDDQ Q1 D1 VTT D A22 1 DNU3 DNU3 VSSQ VSSQ QK0# QK0 VSS E A21 1 3 DNU 3 DNU VDDQ VDDQ Q2 D2 A20 F A5 DNU3 DNU3 VSSQ VSSQ Q3 D3 QVLD G A8 A6 A7 VDD VDD A2 A1 A0 H BA2 A9 VSS VSS VSS VSS A4 A3 J NF2 NF2 VDD VDD VDD VDD BA0 CK K DK DK# VDD VDD VDD VDD BA1 CK# L REF# CS# VSS VSS VSS VSS A14 A13 M WE# A16 A17 VDD VDD A12 A11 A10 3 3 5 6 7 8 N A18 DNU DNU VSSQ VSSQ Q4 D4 A19 P A15 DNU3 DNU3 VDDQ VDDQ Q5 D5 DM VSS 3 3 VSSQ VSSQ Q6 D6 VSS 3 R DNU 3 DNU T VTT DNU DNU VDDQ VDDQ Q7 D7 VTT U VDD DNU3 DNU3 VSSQ VSSQ Q8 D8 VDD V VREF ZQ VEXT VSS VSS VEXT TDO TDI Symbol VDD VSS VDDQ VSSQ VEXT VREF VTT A* BA* D* Q* DK* QK* CK* DM CS#,WE#,REF# ZQ QVLD DNU,NF T* Total Description Supply voltage Ground DQ power supply DQ Ground Supply voltage Reference voltage Termination voltage Address - A0-22 Banks - BA0-2 Input data Output data Input data clock(Differential inputs) Output data clocks(outputs) Input clocks (CK, CK#) Input data mask Command control pins External impedance (25–60Ω) Data valid Do not use, No function JTAG - TCK,TMS,TDO,TDI Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 Ball count 16 16 8 12 4 2 4 23 3 9 9 2 2 2 1 3 1 1 22 4 144 Notes: NOTES: 1. Reserved forfor future use. This may optionally 1) Reserved future use. This may be connected to GND. optionally be connected to GND. 2. No function. This signal is internally connected and 2) for future of use. This signal is hasReserved parasitic characteristics a clock input signal. internally connected and has This may optionally be connected to parasitic GND. 3. Do not use. This of signal internallyinput connected and characteristics anisaddress signal. has parasitic characteristics a I/O. This may This may optionally beofconnected to optionally be connected to GND. Note that if ODT is GND. enabled, these pins are High-Z. 3) No function. This signal is internally connected and has parasitic characteristics of a clock input signal. This may optionally be connected to GND. 4) Do not use. This signal is internally connected and has parasitic characteristics of a I/O. This may optionally be connected to GND. Note that if ODT is enabled, these pins will be connected to VTT. 2 IS49NLS93200,IS49NLS18160 1.2 288Mb (16Mx18) Separate I/O BGA Ball-out (Top View) A B C D E F G H J K L M N P R T U V 1 VREF VDD VTT 1 A22 A212 A5 A8 BA2 NF3 DK REF# WE# A18 A15 VSS VTT VDD VREF Symbol VDD VSS VDDQ VSSQ VEXT VREF VTT A* BA* D* Q* DK* QK* CK* DM CS#,WE#,REF# ZQ QVLD NF T* Total 2 VSS D4 D5 D6 D7 D8 A6 A9 NF3 DK# CS# A16 D14 D15 QK1 D16 D17 ZQ 3 VEXT Q4 Q5 Q6 Q7 Q8 A7 VSS VDD VDD VSS A17 Q14 Q15 QK1# Q16 Q17 VEXT 4 VSS VSSQ VDDQ VSSQ VDDQ VSSQ VDD VSS VDD VDD VSS VDD VSSQ VDDQ VSSQ VDDQ VSSQ VSS Description Supply voltage Ground DQ power supply DQ Ground Supply voltage Reference voltage Termination voltage Address - A0-22 Banks - BA0-2 Input data Output data Input data clock(Differential inputs) Output data clocks(outputs) Input clocks (CK, CK#) Input data mask Command control pins External impedance (25–60Ω) Data valid Do not use, No function JTAG - TCK,TMS,TDO,TDI Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 5 6 7 8 Ball count 16 16 8 12 4 2 4 23 3 18 18 2 4 2 1 3 1 1 2 4 144 9 VSS VSSQ VDDQ VSSQ VDDQ VSSQ VDD VSS VDD VDD VSS VDD VSSQ VDDQ VSSQ VDDQ VSSQ VSS 10 VEXT Q0 Q1 QK0# Q2 Q3 A2 VSS VDD VDD VSS A12 Q9 Q10 Q11 Q12 Q13 VEXT 11 TMS D0 D1 QK0 D2 D3 A1 A4 BA0 BA1 A14 A11 D9 D10 D11 D12 D13 TDO 12 TCK VDD VTT VSS A202 QVLD A0 A3 CK CK# A13 A10 A19 DM VSS VTT VDD TDI Notes: NOTES: 1. for future use. This mayThis optionally 1)Reserved Reserved for future use. maybe connected to GND. optionally be connected to GND. 2. Reserved for future use. This signal is internally 2) Reserved forparasitic futurecharacteristics use. This signal is connected and has of an address internally connected and has parasitic input signal. This may optionally be connected to GND. 3. No function. This of signal internallyinput connected and has characteristics an isaddress signal. This parasitic characteristics of a clock input signal. This may optionally be connected to GND. may optionally be connected to GND. 3) No function. This signal is internally connected and has parasitic characteristics of a clock input signal. This may optionally be connected to GND. 4) Do not use. This signal is internally connected and has parasitic characteristics of a I/O. This may optionally be connected to GND. Note that if ODT is enabled, these pins will be connected to VTT. 3 IS49NLS93200,IS49NLS18160 1.3 Ball Descriptions Symbol Type Description A* Input Address inputs: Defines the row and column addresses for READ and WRITE operations. During a MODE REGISTER SET, the address inputs define the register settings. They are sampled at the rising edge of CK. BA* Input Bank address inputs: Selects to which internal bank a command is being applied to. CK, CK# Input Input clock: CK and CK# are differential input clocks. Addresses and commands are latched on the rising edge of CK. CK# is ideally 180 degrees out of phase with CK. CS# Input Chip select: CS# enables the command decoder when LOW and disables it when HIGH. When the command decoder is disabled, new commands are ignored, but internal operations continue. D* Input Data input: The D signals form the input data bus. During WRITE commands, the data is sampled at both edges of DK. DK, DK# Input Input data clock: DK* and DK*# are the differential input data clocks. All input data is referenced to both edges of DK*. DK*# is ideally 180 degrees out of phase with DK*. For both the x9 and x18 devices, all D signals are referenced to DK and DK#. DK and DK# pins must always be supplied to the device. DM Input Input data mask: The DM signal is the input mask signal for WRITE data. Input data is masked when DM is sampled HIGH. DM is sampled on both edges of DK. Tie signal to ground if not used. TCK Input IEEE 1149.1 clock input: This ball must be tied to VSS if the JTAG function is not used. TMS,TDI Input IEEE 1149.1 test inputs: These balls may be left as no connects if the JTAG function is not used. WE#, REF# Input Command inputs: Sampled at the positive edge of CK, WE# and REF# define (together with CS#) the command to be executed. VREF Input Input reference voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers. ZQ I/O Q* Output Data input: The Q signals form the output data bus. During READ commands, the data is referenced to both edges of QK* QK*, QK*# Output Output data clocks: QK* and QK*# are opposite polarity, output data clocks. They are free running, and during READs, are edge-aligned with data output from the memory. QK*# is ideally 180 degrees out of phase with QK*. For the x18 device, QK0 and QK0# are aligned with Q0-Q8, while QK1 and QK1# are aligned with Q9-Q17. For the x9 device, all Q signals are aligned with QK0 and QK0#. QVLD Output Data valid: The QVLD pin indicates valid output data. QVLD is edge-aligned with QK* and QK*#. TDO Output IEEE 1149.1 test output: JTAG output. This ball may be left as no connect if the JTAG function is not used. VDD Supply Power supply: Nominally, 1.8V. VDDQ Supply DQ power supply: Nominally, 1.5V or 1.8V. Isolated on the device for improved noise immunity. VEXT Supply Power supply: Nominally, 2.5V VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. VTT Supply Power supply: Isolated termination supply. Nominally, VDDQ/2. DNU - Do not use: These balls may be connected to ground. Note that if ODT is enabled, these pins are High-Z. NF - No function: These balls can be connected to ground External impedance (25–60Ω): This signal is used to tune the device outputs to the system data bus impedance. Q output impedance is set to 0.2 × RQ, where RQ is a resistor from this signal to ground. Connecting ZQ to GND invokes the minimum impedance mode. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 4 IS49NLS93200,IS49NLS18160 2 Electrical Specifications 2.1 Absolute Maximum Ratings Item I/O Voltage Voltage on VEXT supply relative to VSS Voltage on VDD supply relative to VSS Voltage on VDDQ supply relative to VSS Min 0.3 0.3 0.3 0.3 Max VDDQ + 0.3 2.8 2.1 2.1 Units V V V V Note: Stress greater than those listed in this table may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2.2 DC Electrical Characteristics and Operating Conditions Description Conditions Supply voltage Supply voltage Isolated output buffer supply Reference voltage Termination voltage Input high voltage Input low voltage Symbol Min Max Units VEXT VDD VDDQ VREF VTT VIH VIL 2.38 1.7 1.4 0.49 x VDDQ 0.95 x VREF VREF + 0.1 VSSQ 0.3 (VDDQ/2)/ (1.15 x RQ/5) (VDDQ/2)/ (1.15 x RQ/5) 5 5 5 5 2.63 1.9 VDD 0.51 x VDDQ 1.05 x VREF VDDQ + 0.3 VREF 0.1 (VDDQ/2)/ (0.85 x RQ/5) (VDDQ/2)/ (0.85 x RQ/5) 5 5 5 5 V V V V V V V Output high current VOH = VDDQ/2 IOH Output low current VOL = VDDQ/2 IOL 0V ≤ VIN ≤ VDD 0V ≤ VIN ≤ VDD 0V ≤ VIN ≤ VDDQ ILC ILI ILO IREF Clock input leakage current Input leakage current Output leakage current Reference voltage current A A Notes 2 2,3 4,5,6 7,8 2 2 9, 10, 11 9, 10, 11 µA µA µA µA Notes: 1. All voltages referenced to VSS (GND). 2. Overshoot: VIH (AC) ≤ VDD + 0.7V for t ≤ tCK/2. Undershoot: VIL (AC) ≥ –0.5V for t ≤ tCK/2. During normal operation, VDDQ must not exceed VDD. Control input signals may not have pulse widths less than tCK/2 or operate at frequencies exceeding tCK (MAX). 3. VDDQ can be set to a nominal 1.5V ± 0.1V or 1.8V ± 0.1V supply. 4. Typically the value of VREF is expected to be 0.5 x VDDQ of the transmitting device. VREF is expected to track variations in VDDQ. 5. Peak-to-peak AC noise on VREF must not exceed ±2 percent VREF (DC). 6. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on VREF may not exceed ±2 percent of the DC value. Thus, from VDDQ/2, VREF is allowed ±2 percent VDDQ/2 for DC error and an additional ±2 percent VDDQ/2 for AC noise. This measurement is to be taken at the nearest VREF bypass capacitor. 7. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF. 8. On-die termination may be selected using mode register A9 (for non-multiplexed address mode) or Ax9 (for multiplexed address mode). A resistance RTT from each data input signal to the nearest VTT can be enabled. RTT = 125–185Ω at 95°C TC. 9. IOH and IOL are defined as absolute values and are measured at VDDQ /2. IOH flows from the device, IOL flows into the device. 10. If MRS bit A8 or Ax8 is 0, use RQ = 250Ω in the equation in lieu of presence of an external impedance matched resistor. 2.3 Capacitance (TA = 25 °C, f = 1MHz) Parameter Address / Control Input capacitance I/O, Output, Other capacitance (D, Q, DM, QK, QVLD) Clock Input capacitance JTAG pins Symbol CIN CIO CCLK CJ Test Conditions VIN=0V VIO=0V VCLK=0V VJ=0V Min 1.5 3.5 2 2 Max 2.5 5 3 5 Units pF pF pF pF Note. These parameters are not 100% tested and capacitance is not tested on ZQ pin. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 5 IS49NLS93200,IS49NLS18160 2.4 Operating Conditions and Maximum Limits Description Condition Symbol -25E -25 -33 units ISB1(VDD) x9/x18 53 48 48 mA ISB1(VEXT) 5 5 5 mA ISB2(VDD) x9/x18 293 288 233 mA ISB2(VEXT) 5 5 5 mA IDD1(VDD) x9/x18 380 348 305 mA IDD1(VEXT) 15 15 13 mA IDD2(VDD) x9/x18 400 362 319 mA IDD2(VEXT) 15 15 13 mA IDD3 (VDD) x9/x18 430 408 368 mA IDD3(VEXT) 20 20 18 mA Eight-bank cyclic refresh; Continuous address/data; Command bus remains in refresh for all eight banks IREF1(VDD) x9/x18 790 785 615 mA IREF1(VEXT) 80 80 70 mA Single-bank refresh; Sequential bank access; Half address transitions once every tRC, continuous data IREF2(VDD) x9/x18 330 325 267 mA IREF2(VEXT) 20 20 18 mA BL=2; Cyclic bank access; Half of address bits change every clock cycle; Continuous data; measurement is taken during continuous WRITE IDD2W(VDD) x9/x18 980 970 819 mA IDD2W(VEXT) 50 50 40 mA BL=4; Cyclic bank access; Half of address bits change every 2 clock cycles; Continuous data; Measurement is taken during continuous WRITE IDD4W(VDD) x9/x18 785 779 609 mA IDD4W(VEXT) 30 30 25 mA BL=8; Cyclic bank access; Half of address bits change every 4 clock cycles; continuous data; Measurement is taken during continuous WRITE IDD8W(VDD) x9/x18 675 668 525 mA IDD8W(VEXT) 30 30 25 mA BL=2; Cyclic bank access; Half of address bits change every clock cycle; Measurement is taken during continuous READ IDD2R(VDD) x9/x18 865 860 735 mA IDD2R(VEXT) 50 50 40 mA BL=4; Cyclic bank access; Half of address bits change every clock cycle; Measurement is taken during continuous READ IDD4R(VDD) x9/x18 685 680 525 mA IDD4R(VEXT) 30 30 25 mA BL=8; Cyclic bank access; Half of address bits change every clock cycle; Measurement is taken during continuous READ IDD8R(VDD) x9/x18 575 570 450 mA IDD8R(VEXT) 30 30 25 mA Standby current tCK = idle; All banks idle; No inputs toggling Active standby current CS# =1; No commands; Bank address incremented and half address/data change once every 4 clock cycles Operational current BL=2; Sequential bank access; Bank transitions once every tRC; Half address transitions once every tRC; Read followed by write sequence; continuous data during WRITE commands BL = 4; Sequential bank access; Bank transitions once every tRC; Half address transitions once every tRC; Read followed by write sequence; Continuous data during WRITE commands BL = 8; Sequential bank access; Bank transitions once every tRC; half address transitions once every tRC; Read followed by write sequence; continuous data during WRITE commands Burst refresh current Distributed refresh current Operating burst write current Operating burst read current Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 6 IS49NLS93200,IS49NLS18160 Notes: 1) IDD specifications are tested after the device is properly initialized. +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, +2.38V ≤ VEXT ≤ +2.63V, +1.4V ≤ VDDQ ≤ VDD, VREF = VDDQ/2. 2) tCK = tDK = MIN, tRC = MIN. 3) Definitions for IDD conditions: a. LOW is defined as VIN ≤ VIL(AC) MAX. b. HIGH is defined as VIN ≥ VIH(AC) MIN. c. Stable is defined as inputs remaining at a HIGH or LOW level. d. Floating is defined as inputs at VREF = VDDQ/2. e. Continuous data is defined as half the D or Q signals changing between HIGH and LOW every half clock cycle (twice per clock). f. Continuous address is defined as half the address signals changing between HIGH and LOW every clock cycle (once per clock). g. Sequential bank access is defined as the bank address incrementing by one every tRC. h. Cyclic bank access is defined as the bank address incrementing by one for each command access. For BL = 2 this is every clock, for BL = 4 this is every other clock, and for BL = 8 this is every fourth clock. 4) CS# is HIGH unless a READ, WRITE, AREF, or MRS command is registered. CS# never transitions more than once per clock cycle. 5) IDD parameters are specified with ODT disabled. 6) Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operations are tested for the full voltage range specified. 7) IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#). Parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) and VIH(AC). 2.5 Recommended AC Operating Conditions (+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted.) Parameter Symbol Min Max Units Input HIGH voltage VIH(AC) VREF + 0.2 - V Input LOW voltage VIL(AC) - VREF – 0.2 V Notes: 1. Overshoot: VIH (AC) ≤ VDDQ + 0.7V for t ≤ tCK/2 2. Undershoot: VIL (AC) ≥ – 0.5V for t ≤ tCK/2 3. Control input signals may not have pulse widths less than tCKH(MIN) or operate at cycle rates less than tCK(MIN.). 2.6 Temperature and Thermal Impedance Temperature Limits Parameter Symbol Min Max Units Reliability junction temperature 1 TJ 0 110 °C Operating junction temperature 2 TJ 0 100 °C TC 0 95 °C Operating case temperature 3 Notes: 1. Temperatures greater than 110°C may cause permanent damage to the device. This is a stress rating only and functional operation of the device at or above this is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability of the part. 2. Junction temperature depends upon cycle time, loading, ambient temperature, and airflow. 3. MAX operating case temperature; TC is measured in the center of the package. Device functionality is not guaranteed if the device exceeds maximum TC during operation. Thermal Resistance Package Substrate 144-ball FBGA 4-layer Theta-ja (Airflow = 0m/s) 20.6 Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 Theta-ja (Airflow = 1m/s) 19.1 Theta-ja (Airflow = 2m/s) 17.2 Theta-jc 2.4 Unit C/W 7 IS49NLS93200,IS49NLS18160 2.7 AC Electrical Characteristics (1, 2, 3, 4) Description Symbol -25E (2.5ns @tRC=15ns) -25 (2.5ns @tRC=20ns) -33 (3.3ns @tRC=20ns) Units Min Max Min Max Min Max tCK 2.5 5.7 2.5 5.7 3.3 5.7 ns tDK tCK – tCK – tCK – ns tJITPER –150 150 –150 150 –200 200 ps tJITCC – 300 – 300 – 400 ps tCKH/tDKH 0.45 0.55 0.45 0.55 0.45 0.55 tCK tCKL/tDKL 0.45 0.55 0.45 0.55 0.45 0.55 tCK tCKDK –0.45 0.5 –0.3 0.5 –0.3 1.0 ns tMRSC 6 – 6 – 6 – tCK tAS/tCS 0.4 – 0.4 – 0.5 – ns tDS 0.25 – 0.25 – 0.3 – ns tAH/tCH 0.4 – 0.4 – 0.5 – ns tDH 0.25 – 0.25 – 0.3 – ns tQKH 0.9 1.1 0.9 1.1 0.9 1.1 tCKH tQKL 0.9 1.1 0.9 1.1 0.9 1.1 tCKL tQHP MIN(tQKH, tQKL) – MIN(tQKH, tQKL) – MIN(tQKH, tQKL) – tCKQK –0.25 0.25 –0.25 0.25 –0.3 0.3 ns tQKQ0, tQKQ1 –0.2 0.2 –0.2 0.2 –0.25 0.25 ns tQKQ –0.3 0.3 –0.3 0.3 –0.35 0.35 ns tQKVLD –0.3 0.3 –0.3 0.3 –0.35 0.35 ns Data valid window tDVW tQHP (tQKQx [MAX] + |tQKQx [MIN]|) – tQHP (tQKQx [MAX] + |tQKQx [MIN]|) – tQHP (tQKQx [MAX] + |tQKQx [MIN]|) – Average periodic refresh interval (9) tREFI – 0.49 – 0.49 – 0.49 Input clock cycle time Input data clock cycle time Clock jitter: period(5, 6) Clock jitter: cycle-tocycle Clock HIGH time Clock LOW time Clock to input data clock Mode register set cycle time to any command Address/command and input setup time Data-in and data mask to DK setup time Address/command and input hold time Data-in and data mask to DK hold time Output data clock HIGH time Output data clock LOW time Half-clock period QK edge to clock edge skew QK edge to output data edge (7) QK edge to any output data edge (8) QK edge to QVLD Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 μs 8 IS49NLS93200,IS49NLS18160 Notes: 1. All timing parameters are measured relative to the crossing point of CK/CK#, DK/DK# and to the crossing point with VREF of the command, address, and data signals. 2. Outputs measured with equivalent load: VTT 50 Ω Q Test Point 10 pF 3. 4. 5. 6. 7. 8. 9. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operations are tested for the full voltage range specified. AC timing may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) and VIH(AC). Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. Frequency drift is not allowed. For a x18 device, Q0–Q8 is referenced to tQKQ0 and Q9–Q17 is referenced to tQKQ1. For a x9 device, Q0–Q8 is referenced to tQKQ0. tQKQ takes into account the skew between any QKx and any Q. To improve efficiency, eight AREF commands (one for each bank) can be posted to the memory on consecutive cycles at periodic intervals of 3.90μs. 2.8 Clock Input Conditions Differential Input Clock Operating Conditions Parameter Clock Input Voltage Level Clock Input Differential Voltage Level Clock Input Differential Voltage Level Clock Input Crossing Point Voltage Level Symbol VIN(DC) VID(DC) VID(AC) VIX(AC) Min -0.3 0.2 0.4 VDDQ/2-0.15 Max VDDQ+0.3 VDDQ+0.6 VDDQ+0.6 VDDQ/2+0.15 Units V V V V Notes 8 8 9 Clock Input Example CK# VDDQ/2+0.15V, VIX(AC) MAX VDDQ/2 (10) VID(DC)(11) VID(AC)(12) VDDQ/2-0.15V, VIX(AC) MIN CK Notes: 1. DKx and DKx# have the same requirements as CK and CK#. 2. All voltages referenced to VSS. 3. Tests for AC timing, IDD and electrical AC and DC characteristics may be conducted at normal reference/supply voltage levels; but the related specifications and device operations are tested for the full voltage range specified. 4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or the crossing point for CK/CK#), and parameters specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2V/ns in the range between VIL(AC) and VIH(AC). Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 9 IS49NLS93200,IS49NLS18160 5. 7. 8. The AC and DC input level specifications are as defined in the HSTL Standard (i.e. the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above[below] the DC input LOW[HIGH] level). The CK/CK# input reference level (for timing referenced to CK/CK#) is the point at which CK and CK# cross. The input reference level for signal other than CK/CK# is VREF. CK and CK# input slew rate must be ≥ 2V/ns (≥ 4V/ns if measured differentially). VID is the magnitude of the difference between the input level on CK and input level on CK#. 9. 10. 11. 12. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the DC level of the same. CK and CK# must cross within the region. CK and CK# must meet at least VID(DC) (MIN.) when static and centered around VDDQ/2. Minimum peak-to-peak swing. 6. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 10 IS49NLS93200,IS49NLS18160 3 Functional Descriptions 3.1 Power-up and Initialization (1) The RLDRAM 2 Memory must be powered-up and initialized using the specific steps listed below: 1. Apply power by ramping up supply voltages VEXT, VDD, VDDQ, VREF, and VTT. Apply VDD and VEXT before or at the same time as VDDQ (2). Power-up sequence begins when both VDD and VEXT approach their nominal levels. Afterwards, apply VDDQ before or at the same time as VREF and VTT. Once the supply voltages are stable, clock inputs CK/CK# and DK/DK# can be applied. Register NOP commands to the control pins to avoid issuing unwanted commands to the device. 2. Keep applying stable conditions for a minimum of 200 µs. 3. Register at least three consecutive MRS commands consisting of two or more dummy MRS commands and one valid MRS command. Timing parameter tMRSC is not required to be met during these consecutive MRS commands but asserting a LOW logic to the address signals is recommended. 4. tMRSC timing delay after the valid MRS command, Auto Refresh commands to all 8 banks and 1,024 NOP commands must be issued prior to normal operation. The Auto Refresh commands to the 8 banks can be issued in any order with respect to the 1,024 NOP commands. Please note that the tRC timing parameter must be met between an Auto Refresh command and a valid command in the same bank. 5. The device is now ready for normal operation. Notes: 1. Operational procedure other than the one listed above may result in undefined operations and may permanently damage the device. 2. VDDQ can be applied before VDD but will result in all D and Q data pins, DM, and other pins with an output driver to go logic HIGH (instead of tri-state) and will remain HIGH until the VDD is the same level as VDDQ. This method is not recommended to avoid bus conflicts during the power-up. 3.2 Power-up and Initialization Flowchart VDD and VEXT ramp up (1) VDDQ ramp up (1) Issue dummy 2nd MRS command (2) VREF and VTT ramp up (1) Issue valid 3rd MRS command (2) Apply stable CK/CK# and DK/DK# Assert NOP for tMRS Wait 200µs minimum Issue AREF commands to all 8 banks (3) Issue dummy 1st MRS command (2) Issue 1,024 NOP commands (3) RLDRAM is now ready for normal operation Notes: 1. The supply voltages can be ramped up simultaneously. 2. The dummy and valid MRS commands must be issued in consecutive clock cycles. At least two dummy MRS commands are required. It is recommended to assert a LOW logic on the address signals during the dummy MRS commands. 3. The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing any valid command in a bank after an AREF command to the same bank has been issued. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 11 IS49NLS93200,IS49NLS18160 3.3 Power-up and Initialization Timing Diagram Non-multiplexed Address Mode VEXT, VDD, VDDQ, VREF, VTT tCKH tCKL tCK CK ~~ ~~ ~~ ~~ CK# Command NOP MRS1,2 NOP MRS1,2 MRS2 AREFBA0 NOP tMRSC 200us(Min) AREFBA7 Refresh all 8 banks Any5 1024 NOPs Don’t care Notes: 1. It is recommended that the address input signals be driven LOW during the dummy MRS commands. 2. A10–A17 must be LOW. 3. DLL must be reset if tCK or VDD are changed. 4. CK and CK# must be separated at all times to prevent invalid commands from being issued. 5. The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing any valid command in a bank after an AREF command to the same bank has been issued. Multiplexed Address Mode VEXT, VDD, VDDQ, VREF, VTT CK tCKH CK# Command tCKL tCK ~ ~ ~~ NOP NOP ADDRESS ~~ ~~ ~~ MRS MRS MRS MRS NOP AREF AREF Any A1,2 A1,2 A2,3 Ax2,4 Ay Bank0 Bank7 Any 200us(Min) tMRSC tMRSC Refresh all 8 banks 1024NOPs 6 Don’t care Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 12 IS49NLS93200,IS49NLS18160 Notes: 1. It is recommended that the address input signals be driven LOW during the dummy MRS commands. 2. A10–A18 must be LOW. 3. Set address A5 HIGH. This enables the part to enter multiplexed address mode when in non-multiplexed mode operation. Multiplexed address mode can also be entered at some later time by issuing an MRS command with A5 HIGH. Once address bit A5 is set HIGH, tMRSC must be satisfied before the two cycle multiplexed mode MRS command is issued. 4. Address A5 must be set HIGH. This and the following step set the desired mode register once the memory is in multiplexed address mode. 5. CK and CK# must be separated at all times to prevent invalid commands from being issued. 6. The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing any valid command (Any) in a bank after an AREF command to the same bank has been issued. 3.4 Mode Register Setting and Features. MRS - Non-Multiplexed Mode MRS - Multiplexed Mode CK CK# CS# Any Valid WE# Any Valid REF# ADD Valid Code Ax Valid Ay tMRSC tMRSC Don’t care Note: The MRS command can only be issued when all banks are idle and no bursts are in progress. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 13 IS49NLS93200,IS49NLS18160 The Mode Register Set command stores the data for controlling the various operating modes of the memory using address inputs A0-A17 as mode registers. During the MRS command, the cycle time and the read/write latency of the memory can be selected from different configurations. The MRS command also programs the memory to operate in either Multiplexed Address Mode or Nonmultiplexed Address Mode. In addition, several features can be enabled using the MRS command. These are the DLL, Drive Impedance Matching, and On-Die Termination (ODT). tMRSC must be met before any command can be issued. tMRSC is measured like the picture above in both Multiplexed and Non-multiplexed mode. Mode Register Diagram (Non-multiplexed Address Mode) Address Field Mode Register A10-17 M10-17 01 A9 M9 ODT A8 M8 IM A7 M7 DLL A6 M6 NA2 A5 M5 AM A4 M4 A3 M3 A2 M2 A1 M1 A0 M0 BL Config A9 0 1 On-Die Termination Off (Default) On A8 0 1 Drive Impedance Internal 50Ω 5 (Default) External(ZQ) A7 0 1 DLL reset4 (Default) DLL enable A5 0 1 Address MUX Non-multiplexed (Default) Multiplexed A4 0 0 1 1 A3 0 1 0 1 Burst Length(BL) 2 (Default) 4 8 Reserved Read/Write Latency and Cycle Time Configuration 6 A2 0 0 0 0 1 1 1 A1 0 0 1 1 0 0 1 A0 0 1 0 1 0 1 0 Configuration 1 3 (Default) 13 2 3 4 3,7 5 Reserved tRC(tCK) 4 4 6 8 3 5 n/a tRL(tCK) 4 4 6 8 3 5 n/a tWL(tCK) 5 5 7 9 4 6 n/a Valid Frequency Range (MHz) 266-175 266-175 400-175 533-175 8 200-175 333-175 n/a Notes: 1. A10-A17 must be set to zero; A18-An are "Don't cares." 2. A6 not used in MRS. 3. BL = 8 is not available. 4. DLL RESET turns the DLL off. 5. ±30 % temperature variation. 6. tRC < 20ns in any configuration is only available with -25E and speed grade. 7. The minimum tRC is typically 3 cycles, except in the case of a WRITE followed by a READ to the same bank. In this instance the minimum tRC is 4 cycles. 8. tCK must be met to use this configuration. For tCK values, please refer to AC Electrical Characteristics table. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 14 IS49NLS93200,IS49NLS18160 Mode Register Diagram (Multiplexed Address Mode) Ax Ay Mode Register A10-18 A10-18 M10-18 01 A9 M9 ODT A8 M8 IM A9 M7 DLL A8 M6 NA5 A5 M5 AM A4 M4 A3 M3 BL A4 M2 A3 M1 A0 A9 0 1 On-Die Termination Off (Default) On A8 0 1 Drive Impedance Internal 50Ω 6 (Default) External(ZQ) A7 0 1 DLL Reset DLL reset4 (Default) DLL enable A5 0 1 Address MUX Non-multiplexed (Default) Multiplexed A4 0 0 1 1 Config A3 0 1 0 1 Burst Length(BL) 2 (Default) 4 8 Reserved M0 Ay4 0 0 0 0 1 1 1 1 Ay3 0 0 1 1 0 0 1 1 Ax0 0 1 0 1 0 1 0 1 Read/Write Latency and Cycle Time Configuration8 Configuration tRC(tCK) tRL(tCK) tWL(tCK) 2 4 5 6 1 (Default) 2 4 5 6 1 2 6 7 8 3 8 9 10 3 4 5 4 2,9 5 5 6 7 Reserved n/a n/a n/a Reserved n/a n/a n/a Valid Frequency Range (MHz) 266-175 266-175 400-175 533-17510 200-175 333-175 n/a n/a Notes: 1. A10-A18 must be set to zero; A19-An are "Don't cares." 2. BL = 8 is not available. 3. ±30 % temperature variation. 4. DLL RESET turns the DLL off. 5. Ay = 8 is not used in MRS. 6. BA0-BA2 are "Don't care." 7. Addresses A0, A3, A4, A5, A8, and A9 must be set as shown in order to activate the mode register in the multiplexed address mode. 8. tRC < 20ns in any configuration is only available with -25E speed grade. 9. The minimum tRC is typically 3 cycles, except in the case of a WRITE followed by a READ to the same bank. In this instance the minimum tRC is 4 cycles. 10. tCK must be met to use this configuration. For tCK values, please refer to AC Electrical Characteristics table. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 15 IS49NLS93200,IS49NLS18160 3.5 Mode Register Bit Description Configuration The cycle time and read/write latency can be configured from the different options shown in the Mode Register Diagram. In order to maximize data bus utilization, the WRITE latency is equal to READ latency plus one. The read and write latencies are increased by one clock cycle during multiplexed address mode compared to non-multiplexed mode. Burst Length The burst length of the read and write accesses to memory can be selected from three different options: 2, 4, and 8. Changes in the burst length affect the width of the address bus and is shown in the Burst Length and Address Width Table. The data written during a prior burst length setting is not guaranteed to be accurate when the burst length of the device is changed. Burst Length and Address Width Table Burst Length 288Mb Address Bus x9 x18 2 4 A0-A20 A0-A19 A0-A19 A0-A18 8 A0-A18 A0-A17 DLL Reset The default setting for this option is LOW, whereby the DLL is disabled. Once the mode register for this feature is set HIGH, 1024 cycles (5μs at 200 MHz) are needed before a READ command can be issued. This time allows the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tCKQK parameter. A reset of the DLL is necessary if tCK or VDD is changed after the DLL has already been enabled. To reset the DLL, an MRS command must be issued where the DLL Reset Mode Register is set LOW. After waiting tMRSC, a subsequent MRS command should be issued whereby the DLL Reset Mode Register is set HIGH. 1024 clock cycles are then needed before a READ command is issued. Drive Impedance Matching The RLDRAM 2 Memory is equipped with programmable impedance output buffers. The purpose of the programmable impedance output buffers is to allow the user to match the driver impedance to the system. To adjust the impedance, an external precision resistor (RQ) is connected between the ZQ ball and VSS. The value of the resistor must be five times the desired impedance. For example, a 300Ω resistor is required for an output impedance of 60Ω. The range of RQ is 125–300Ω, which guarantees output impedance in the range of 25–60Ω (within 15 percent). Output impedance updates may be required because over time variations may occur in supply voltage and temperature. When the external drive impedance is enabled in the MRS, the device will periodically sample the value of RQ. An impedance update is transparent to the system and does not affect device operation. All data sheet timing and current specifications are met during an update. When the Drive Impedance Mode Register is set LOW during the MRS command, the memory provides an internal impedance at the output buffer of 50Ω (±30% with temperature variation). This impedance is also periodically sampled and adjusted to compensate for variation in supply voltage and temperature. Address Multiplexing Although the RLDRAM 2 Memory is capable of accepting all the addresses in a single rising clock edge, this memory can be programmed to operate in multiplexed address mode, which is very similar to a traditional DRAM. In multiplexed address mode, the address can be sent to the memory in two parts within two consecutive rising clock edges. This minimizes the number of address signal connections between the controller and the memory by reducing the address bus to a maximum of only 11 lines. Since the memory requires two clock cycles to read and write the data, data bus efficiency is affected when operating in continuous burst mode with a burst length of 2 setting. Bank addresses are provided to the memory at the same time as the WRITE and READ commands together with the first address part, Ax. The second address part, Ay, is then issued to the memory on the next rising clock edge. AREF commands only require the bank address. Since AREF commands do not need a second consecutive clock for address latching, they may be issued on consecutive clocks. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 16 IS49NLS93200,IS49NLS18160 Address Mapping in Multiplexed Address Mode Data Width Burst Length 2 X9 4 8 2 X18 4 8 Address Ball A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ax Ay Ax Ay Ax Ay A0 A20 A0 X A0 X A3 A1 A3 A1 A3 A1 A4 A2 A4 A2 A4 A2 A5 X A5 X A5 X A8 A6 A8 A6 A8 A6 A9 A7 A9 A7 A9 A7 A10 A19 A10 A19 A10 X A13 A11 A13 A11 A13 A11 A14 A12 A14 A12 A14 A12 A17 A16 A17 A16 A17 A16 A18 A15 A18 A15 A18 A15 Ax Ay Ax Ay Ax A0 X A0 X A0 A3 A1 A3 A1 A3 A4 A2 A4 A2 A4 A5 X A5 X A5 A8 A6 A8 A6 A8 A9 A7 A9 A7 A9 A10 A19 A10 X A10 A13 A11 A13 A11 A13 A14 A12 A14 A12 A14 A17 A16 A17 A16 A17 A18 A15 A18 A15 X Ay X A1 A2 X A6 A7 X A11 A12 A16 A15 Note: X = Don’t Care. On-Die Termination (ODT) If the ODT is enabled, the Ds, Qs and DM are terminated to VTT with a resistance RTT. The command, address, QVLD, and clock signals are not terminated. Figure 3.1 shows the equivalent circuit of a D receiver with ODT. The ODT function is dynamically switched off when a Q begins to drive after a READ command is issued. Similarly, ODT is designed to switch on at the Qs after the memory has issued the last piece of data. The D and DM pins will always be terminated. ODT DC Parameters Table Description Symbol Min Max Units Notes Termination Voltage VTT 0.95 x VREF 1.05 x VREF V 1, 2 On-die termination RTT 125 185 Ω 3 Notes: 1. All voltages referenced to VSS (GND). 2. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF. 3. The RTT value is measured at 95°C TC. VTT Switch RTT Receiver D Figure 3.1 ODT Equivalent Circuit Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 17 IS49NLS93200,IS49NLS18160 3.6 Deselect/No Operation (DESL/NOP) The Deselect command is used to prevent unwanted operations from being performed in the memory device during wait or idle states. Operations already registered to the memory prior to the assertion of the Deselect command will not be cancelled. 3.7 Read Operation (READ) The Read command performs burst-oriented data read accesses in a bank of the memory device. The Read command is initiated by registering the WE# and REF# signals logic HIGH while the CS# is in logic LOW state. In non-multiplexed address mode, both an address and a bank address must be provided to the memory during the assertion of the Read command. In multiplexed mode, the bank address and the first part of the address, Ax, must be supplied together with the Read command. The second part of the address, Ay, must be latched to the memory on the subsequent rising edge of the CK clock. Data being accessed will be available in the data bus a certain amount of clock cycles later depending on the Read Latency Configuration setting. Data driven in the Q signals are edge-aligned to the free-running output data clocks QKx and QKx#. A half clock cycle before the read data is available on the data bus, the data valid signal, QVLD, will transition from logic LOW to HIGH. The QVLD signal is also edgealigned to the data clock QKx and QKx#. If no other commands have been registered to the device when the burst read operation is finished, the Q signals will go to High-Z state. The QVLD signal transition from logic HIGH to logic LOW on the last bit of the READ burst. Please note that if CK/CK# violates the VID (DC) specification while a READ burst is occurring, QVLD will remain HIGH until a dummy READ command is registered. The QK clocks are free-running and will continue to cycle after the read burst is complete. Back-to-back READ commands are permitted which allows for a continuous flow of output data. CK# Non-Multiplexed Mode CK# CK CK CS# CS# WE# WE# REF# REF# Multiplexed Mode ADDRESS A ADDRESS Ax BANK ADDRESS BA* BANK ADDRESS BA* Ay Don’t care Read Command Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 18 IS49NLS93200,IS49NLS18160 0 tCKH 1 2 3 4 5 6 RD RD NOP NOP NOP NOP NOP BA2, A2 BA3, A3 tCKL tCK CK# CK Command Address Read Latency = 4 tQKVLD QVLD tQKVLD tQKQ Q Q2-1 tCKQK tQKH tQKQ Q2-2 Q3-1 Q3-2 tQKL QKx# QKx Don’t Care Undefined Basic Read Burst with QVLD: BL=2 & RL=4 Notes: 1. Minimum READ data valid window can be expressed as MIN(tQKH, tQKL) – 2 x MAX(tQKQx). 2. tCKH and tCKL are recommended to have 50% / 50% duty. 3. tQKQ0 is referenced to Q0–Q8 and tQKQ1 is referenced to Q9–Q17 in x18. 4. tQKQ takes into account the skew between any QKx and any Q. 5. tCKQK is specified as CK rising edge to QK rising edge. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 19 IS49NLS93200,IS49NLS18160 0 1 2 3 4 5 6 7 8 RD WR RD NOP NOP NOP NOP NOP NOP BA2, A2 BA3, A3 CK# CK Command Address BA1, A1 Write Latency = 5 Read Latency = 4 DK# DK D D2-1 Q Q1-1 Q1-2 Q1-3 Q1-4 D2-2 Q3-1 D2-3 Q3-2 D2-4 Q3-3 Q3-4 QVLD QK# QK Don’t care Undefined Read Followed by Write: BL = 4, RL =4 & WL = 5, Configuration 1 3.8 Write Operation (WRITE) The Write command performs burst-oriented data write accesses in a bank of the memory device. The Write command is initiated by registering the REF# signal logic HIGH while the CS# and WE# signals are in logic LOW state. In non-multiplexed address mode, both an address and a bank address must be provided to the memory during the assertion of the Write command. In multiplexed mode, the bank address and the first part of the address, Ax, must be supplied together with the Write command. The second part of the address, Ay, must be latched to the memory on the subsequent rising edge of the CK clock. Input data to be written to the device can be registered several clock cycles later depending on the Write Latency Configuration setting. The write latency is always one cycle longer than the programmed read latency. The DM signal can mask the input data by setting this signal logic HIGH. At least one NOP command in between a Read and Write commands is required in order to avoid data bus contention. The setup and hold times for DM and data signals are tDS and tDH, which are referenced to the DK clocks. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 20 IS49NLS93200,IS49NLS18160 CK# Non-Multiplexed Mode CK# CK CK CS# CS# WE# WE# REF# REF# Multiplexed Mode ADDRESS A ADDRESS Ax BANK ADDRESS BA* BANK ADDRESS BA* Ay Don’t care Write Command 0 1 2 3 4 5 6 7 NOP NOP NOP NOP NOP NOP NOP CK# CK tCKDK DKx# DKx Command Address WR BA1, A1 Write Latency = 5 DM tDS tDH D1-0 D Masked Data D1-2 D1-3 Don’t Care D1-4 Undefined Basic WRITE Burst with DM Timing: BL=4 & WL=5 Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 21 IS49NLS93200,IS49NLS18160 0 1 2 3 4 5 6 7 8 9 WR WR RD RD NOP NOP NOP NOP NOP NOP BA1,A1 BA2,A2 BA3, A3 BA4, A4 CK# CK Command Address Read Latency = 4 Read Latency = 4 Write Latency = 5 Write Latency = 5 DKx DKx# D D1-1 D1-2 Q D2-1 D2-2 Q3-1 Q3-2 Q4-1 Q4-2 QVLD QKx QKx# Don’t Care Undefined Write Followed by Read: BL=2, RL=4 & WL=5, Configuration 1 3.9 Auto Refresh Command (AREF) The Auto Refresh command performs a refresh cycle on one row of a specific bank of the memory. Only bank addresses are required together with the control the pins. Therefore, Auto Refresh commands can be issued on subsequent CK clock cycles on both multiplexed and non-multiplexed address mode. Any command following an Auto Refresh command must meet a t RC timing delay or later. CK# CK CS# WE# REF# ADDRESS BANK ADDRESS BA* Don’t care Auto Refresh Command Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 22 IS49NLS93200,IS49NLS18160 0 tCKH tCKL 2 1 3 4 5 6 NOP ANYCOMx ANYCOMy BAx BAy tCK CK# CK QKx# QKx Command tRC AREFx AREFy NOP NOP tRC Bank Address BAx BAy Don’t Care AREF example in tRC(tCK)=5 option: Configuration=5 Command Truth Table Operation Code CS# WE# REF# Ax BAx Device DESELECT/No Operation Mode Register Set Read Write Auto Refresh DESL/NOP MRS READ WRITE AREF H L L L L X L H L H X L H H L X OPCODE A A X X X BA BA BA Notes: 1. X = "Don't Care;" H = logic HIGH; L = logic LOW; A = Valid Address; BA = Valid Bank Address. 2. During MRS, only address inputs A0-A17 are used. 3. Address width changes with burst length. 4. All input states or sequences not shown are illegal or reserved. 5. All command and address inputs must meet setup and hold times around the rising edge of CK. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 23 IS49NLS93200,IS49NLS18160 3.11 On-Die Termination (ODT) Timing examples. Read Operation with ODT: RL=4, BL=4 0 1 2 3 4 5 6 RD NOP NOP NOP NOP NOP NOP 7 CK# CK Command Address NOP BA2, A2 Read Latency = 4 tQKVLD tQKVLD QVLD Q ODT Q ODT on Q ODT Off Q ODT on Q Q2-0 Q2-1 Q2-2 Q2-3 QKx# QKx Undefined Don’t Care Read to Write with ODT: RL=4, BL=2 0 1 2 3 RD WR NOP NOP BA2, A2 BA1, A1 4 5 6 NOP NOP NOP 7 CK# CK Command Address NOP Read Latency = 4 DKx# DKx Write Latency = 5 D D1-0 tQKVLD D1-1 tQKVLD QVLD Q ODT Q ODT on Q Q ODT Off Q2-0 Q ODT on Q2-1 QKx# QKx Don’t Care Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 Undefined 24 IS49NLS93200,IS49NLS18160 4 IEEE 1149.1 TAP and Boundary Scan RLDRAM 2 Memory devices have a serial boundary-scan test access port (TAP) that allow the use of a limited set of JTAG instructions to test the interconnection between the memory I/Os and printed circuit board traces or other components. In conformance with IEEE Standard 1149.1, the memory contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. The TAP operates in accordance with IEEE Standard 1149.1-2001 (JTAG) with the exception of the ZQ pin. To guarantee proper boundary-scan testing of the ZQ pin, MRS bit M8 needs to be set to 0 until the JTAG testing of the pin is complete. Note that on power up, the default state of MRS bit M8 is logic LOW. The TAP is compliant with IEEE 1149.1-2013 as far as all mandatory features (BYPASS, EXTEST, PRELOAD, and SAMPLE), and several optional features (CLAMP, HIGHZ, IDCODE, ECIDCODE). If the memory boundary scan register is to be used upon power up and prior to the initialization of the device, the CK and CK# pins meet VID(DC) or CS# be held HIGH from power up until testing. Not doing so could result in inadvertent MRS commands to be loaded, and subsequently cause unexpected results from address pins that are dependent upon the state of the mode register. If these measures cannot be taken, the part must be initialized prior to boundary scan testing. If a full initialization is not practical or feasible prior to boundary scan testing, a single MRS command with desired settings may be issued instead. After the single MRS command is issued, the tMRSC parameter must be satisfied prior to boundary scan testing. 4.1 Disabling the JTAG feature The RLDRAM 2 Memory can operate without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (V SS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be left disconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left disconnected. On power-up, the device will come up in a reset state, which will not interfere with device operation. 4.2 Test Access Port Signal List: Test Clock (TCK) This signal uses VDD as a power supply. The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) This signal uses VDD as a power supply. The TMS input is used to send commands to the TAP controller and is sampled on the rising edge of TCK. Test Data-In (TDI) This signal uses VDD as a power supply. The TDI input is used to serially input test instructions and information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. TDI is connected to the most significant bit (MSB) of any register. For more information regarding instruction register loading, please see the TAP Controller State Diagram. Test Data-Out (TDO) This signal uses VDDQ as a power supply. The TDO output ball is used to serially clock test instructions and data out from the registers. The TDO output driver is only active during the Shift-IR and Shift-DR TAP controller states. In all other states, the TDO pin is in a HighZ state. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. For more information, please see the TAP Controller State Diagram. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 25 IS49NLS93200,IS49NLS18160 4.3 TAP Controller State and Block Diagram 1 Test Logic Reset 0 1 1 Run Test Idle 1 Select DR 0 Select IR 0 0 1 1 Capture DR Capture IR 0 0 Shift DR 0 Shift IR 1 0 1 1 1 Exit1 DR Exit1 IR 0 0 Pause DR 0 Pause IR 1 0 1 Exit2 DR Exit2 IR 0 0 1 1 1 Update DR 0 Update IR 1 0 Note1 TDI Bypass Register (1 bit) Identification Register (32 bits) TDO Instruction Register (8 bits) Control Signals TMS TAP Controller TCK Note: 113 boundary scan registers in RLDRAM 2 Memory Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 26 IS49NLS93200,IS49NLS18160 4.4 Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. RESET may be performed while the SRAM is operating and does not affect its operation. At power-up, the TAP is internally reset to ensure that TDO comes up in a high-Z state. 4.5 TAP Registers Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK and output on the TDO pin on the falling edge of TCK. Instruction Register This register is loaded during the update-IR state of the TAP controller. At power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the capture-IR state, the two LSBs are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the memory device with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the device. Several balls are also included in the scan register to reserved balls. The boundary scan register is loaded with the contents of the memory Input and Output ring when the TAP controller is in the capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the shift-DR state. Each bit corresponds to one of the balls on the device package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the device and can be shifted out when the TAP controller is in the shift-DR state. 4.6 Scan Register Sizes Register Name Bit Size Instruction Register 8 Bypass Register 1 Boundary Scan Register 113 Identification (ID) Register 32 Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 27 IS49NLS93200,IS49NLS18160 4.7 TAP Instruction Set Many instructions are possible with an eight-bit instruction register and all valid combinations are listed in the TAP Instruction Code Table. All other instruction codes that are not listed on this table are reserved and should not be used. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted from the instruction register through the TDI and TDO pins. To execute an instruction once it is shifted in, the TAP controller must be moved into the Update-IR state. EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-scan register cells at output balls are used to apply a test vector, while those at input balls capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST, the output driver is turned on, and the PRELOAD data is driven onto the output balls. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the identification register. It also places the identification register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. High-Z The High-Z instruction causes the bypass register to be connected between the TDI and TDO. This places all RLDRAM 2 Memory outputs into a High-Z state. CLAMP When the CLAMP instruction is loaded into the instruction register, the data driven by the output balls are determined from the values held in the boundary scan register. SAMPLE/PRELOAD When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 50 MHz, while the memory clock operates significantly faster. Because there is a large difference between the clock frequencies, it is possible that during the capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To ensure that the boundary scan register will capture the correct value of a signal, the memory signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The memory clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/ PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK# captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the shift-DR state. This places the boundary scan register between the TDI and TDO balls. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a shift-DR state, the bypass register is placed between TDI and TDO. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 28 IS49NLS93200,IS49NLS18160 4.8 TAP DC Electrical Characteristics and Operating Conditions (+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted) Description Symbol Min Max Units Notes Input high (logic 1) voltage VIH VREF + 0.15 VDDQ + 0.3 V 1, 2 Input low (logic 0) voltage VIL VSSQ 0.3 VREF 0.15 V 1, 2 Input leakage current Conditions 0V ≤ VIN ≤ VDD ILI 5 5 µA Output Disabled, 0V ≤ VIN ≤ VDDQ ILO 5 5 µA Output low voltage IOLC =100 µA VOL1 - 0.2 V 1 Output low voltage IOLT = 2mA VOL2 - 0.4 V 1 Output high voltage |IOHC| =100 µA VOH1 VDDQ - 0.2 - V 1 Output high voltage |IOHT | = 2mA VOH2 VDDQ - 0.4 - V 1 Output leakage current Notes: 1. All voltages referenced to VSS (GND). 2. Overshoot = VIH(AC) ≤ VDD + 0.7V for t ≤ tCK/2; undershoot = VIL(AC) ≥ –0.5V for t ≤ tCK/2; during normal operation, VDDQ must not exceed VDD. 4.9 TAP AC Electrical Characteristics and Operating Conditions (+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V) Description Symbol Min tTHTH fTF tTHTL tTLTH 20 Max Units 50 MHz Clock Clock Cycle Time Clock Frequency Clock HIGH Time Clock LOW Time ns 10 ns 10 ns tTLOX tTLOV tDVTH tTHDX 0 ns TDI/TDO times TCK LOW to TDO unknown TCK LOW to TDO valid TDI valid to TCK High TCK HIGH to TDI invalid 10 ns 5 ns 5 ns tMVTH tCS 5 ns 5 ns tTMHX tCH 5 ns 5 ns Setup times TMS Setup Capture Setup Hold Times TMS hold Capture hold Note: tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 29 IS49NLS93200,IS49NLS18160 4.10 TAP Timing 0 1 tTHTL 2 tTLTH 3 4 5 6 7 tTHTH Test Mode Clock (CK) tMVTH tTHMX Test Mode Select (TMS) tDVTH tTHDX Test Data-In (TDI) tTLOV tTLOX Test Data-Out (TDO) Don’t Care Undefined 4.11 TAP Instruction Codes Instruction Code EXTEST 0000 0000 IDCODE 0010 0001 SAMPLE/PRELOAD 0000 0101 CLAMP 0000 0111 High-Z 0000 0011 BYPASS 1111 1111 Description Captures Input and Output ring contents. Places the boundary scan register between TDI and TDO. This operation does not affect device operations Loads the ID register with the vendor ID code and places the register between TDI and TDO; This operation does not affect device operations Captures I/O ring contents; Places the boundary scan register between TDI and TDO Selects the bypass register to be connected between TDI and TDO; Data driven by output balls are determined from values held in the boundary scan register Selects the bypass register to be connected between TDI and TDO; All outputs are forced into High-Z Places the bypass register between TDI and TDO; This operation does not affect device operations Note: All other remaining instruction codes not mentioned in the above table are reserved and should not be used. 4.12 Identification (ID) Register Definition Instruction Field All Devices Revision number (31:28) abcd Device ID (27:12) 00jkidef10100111 Vendor ID code (11:1) ID register presence indicator (0) 000 1101 0101 1 Description ab = die revision cd = 00 for x9, 01 for x18, 10 for x36 def = 000 for 288Mb, 001 for 576Mb i = 0 for common I/O, 1 for separate I/O jk = 01 for RLDRAM 2 Memory Allows unique identification of vendor Indicates the presence of an ID register 4.13 TAP Input AC Logic Levels (+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted) Description Input high (logic 1) voltage Input low (logic 0) voltage Symbol VIH VIL Min VREF + 0.3 - Max VREF - 0.3 Units V V Note: All voltages referenced to VSS (GND). Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 30 IS49NLS93200,IS49NLS18160 4.14 Boundary Scan Order Bit# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Signal name Bump x9 x18 ID DK DK K1 DK# DK# K2 CS# CS# L2 REF# REF# L1 WE# WE# M1 A17 A17 M3 A16 A16 M2 A18 A18 N1 A15 A15 P1 DNU Q14 N3 DNU Q14 N3 DNU D14 N2 DNU D14 N2 DNU Q15 P3 DNU Q15 P3 DNU D15 P2 DNU D15 P2 DNU QK1 R2 DNU QK1# R3 DNU D16 T2 DNU D16 T2 DNU Q16 T3 DNU Q16 T3 DNU D17 U2 DNU D17 U2 DNU Q17 U3 DNU Q17 U3 ZQ ZQ V2 Q8 Q13 U10 Q8 Q13 U10 D8 D13 U11 D8 D13 U11 Q7 Q12 T10 Q7 Q12 T10 D7 D12 T11 D7 D12 T11 Q6 Q11 R10 Q6 Q11 R10 Bit# 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 Signal name Bump x9 x18 ID D6 D11 R11 D6 D11 R11 D5 D10 P11 D5 D10 P11 Q5 Q10 P10 Q5 Q10 P10 D4 D9 N11 D4 D9 N11 Q4 Q9 N10 Q4 Q9 N10 DM DM P12 A19 A19 N12 A11 A11 M11 A12 A12 M10 A10 A10 M12 A13 A13 L12 A14 A14 L11 BA1 BA1 K11 CK# CK# K12 CK CK J12 BA0 BA0 J11 A4 A4 H11 A3 A3 H12 A0 A0 G12 A2 A2 G10 A1 A1 G11 A20 (A20) E12 QVLD QVLD F12 Q3 Q3 F10 Q3 Q3 F10 D3 D3 F11 D3 D3 F11 Q2 Q2 E10 Q2 Q2 E10 D2 D2 E11 D2 D2 E11 QK0 QK0 D11 QK0# QK0# D10 Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 Bit# 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 Signal name Bump x9 x18 ID D1 D1 C11 D1 D1 C11 Q1 Q1 C10 Q1 Q1 C10 D0 D0 B11 D0 D0 B11 Q0 Q0 B10 Q0 Q0 B10 DNU Q4 B3 DNU Q4 B3 DNU D4 B2 DNU D4 B2 DNU Q5 C3 DNU Q5 C3 DNU D5 C2 DNU D5 C2 DNU Q6 D3 DNU Q6 D3 DNU D6 D2 DNU D6 D2 DNU D7 E2 DNU D7 E2 DNU Q7 E3 DNU Q7 E3 DNU D8 F2 DNU D8 F2 DNU Q8 F3 DNU Q8 F3 (A21) (A21) E1 A5 A5 F1 A6 A6 G2 A7 A7 G3 A8 A8 G1 BA2 BA2 H1 A9 A9 H2 NF NF J2 NF NF J1 31 IS49NLS93200,IS49NLS18160 ORDERING INFORMATION Commercial Range: TC = 0° to +95°C; TA = 0°C to +70°C Frequency Speed Order Part No. Organization Package 400 MHz 2.5ns (tRC=15ns) IS49NLS93200-25EWBL 32M x 9 144 WBGA, Lead-free IS49NLS18160-25EWBL 16M x 18 144 WBGA, Lead-free IS49NLS93200-25WBL 32M x 9 144 WBGA, Lead-free IS49NLS18160-25WBL 16M x 18 144 WBGA, Lead-free IS49NLS93200-33WBL 32M x 9 144 WBGA, Lead-free IS49NLS18160-33WBL 16M x 18 144 WBGA, Lead-free 400 MHz 300 MHz 2.5ns (tRC=20ns) 3.3ns (tRC=20ns) Industrial Range: TC =  40°C to 95°C; TA =  40°C to +85°C Frequency Speed Order Part No. Organization Package 400 MHz 2.5ns (tRC=15ns) IS49NLS93200-25EWBLI 32M x 9 144 WBGA, Lead-free IS49NLS18160-25EWBLI 16M x 18 144 WBGA, Lead-free 400 MHz 2.5ns (tRC=20ns) IS49NLS93200-25WBLI 32M x 9 144 WBGA, Lead-free IS49NLS18160-25WBLI 16M x 18 144 WBGA, Lead-free IS49NLS93200-33WBLI 32M x 9 144 WBGA, Lead-free IS49NLS18160-33WBLI 16M x 18 144 WBGA, Lead-free 300 MHz 3.3ns (tRC=20ns) Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 32 IS49NLS93200,IS49NLS18160 Ball Grid Array Package Code: WB (144-ball WBGA) Integrated Silicon Solution, Inc. – www.issi.com – Rev. B, 01/22/2020 33