IS61C5128AL-10TLI

IS61C5128AL/AS IS64C5128AL/AS 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C5128AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS) • High-speed access time: 25ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 36-pin SOJ (400-mil), 32-pin sTSOP-I, 32-pin SOP, 44-pin TSOP-II and 32pin TSOP-II packages • Commercial, Industrial and Automotive temperature ranges available • Lead-free available MARCH 2008 DESCRIPTION The ISSI IS61C5128AL/AS and IS64C5128AL/AS are highspeed, 4,194,304-bit static RAMs organized as 524,288 words by 8 bits. They are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C5128AL/AS and IS64C5128AL/AS are packaged in the JEDEC standard 36-pin SOJ (400-mil), 32-pin sTSOPI, 32-pin SOP, 44-pin TSOP-II and 32-pin TSOP-II packages FUNCTIONAL BLOCK DIAGRAM A0-A18 DECODER 512K X 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE OE WE CONTROL CIRCUIT Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 1 IS61C5128AL/AS IS64C5128AL/AS HIGH SPEED (IS61/64C5128AL) PIN CONFIGURATION 36-Pin SOJ (400-mil) 44-Pin TSOP (Type II) A0 A1 A2 A3 A4 CE I/O0 I/O1 VDD GND I/O2 I/O3 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE I/O7 I/O6 GND VDD I/O5 I/O4 A14 A13 A12 A11 A10 NC NC NC A0 A1 A2 A3 A4 CE I/O0 I/O1 VDD GND I/O2 I/O3 WE A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC NC NC A18 A17 A16 A15 OE I/O7 I/O6 GND VDD I/O5 I/O4 A14 A13 A12 A11 A10 NC NC NC PIN DESCRIPTIONS A0-A18 CE OE WE I/O0-I/O7 VDD GND NC Address Inputs Chip Enable Input Output Enable Input Write Enable Input Bidirectional Ports Power Ground No Connection 2 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 IS61C5128AL/AS IS64C5128AL/AS LOW POWER (IS61/64C5128AS) PIN CONFIGURATION 32-pin sTSOP (TYPE I) 32-pin SOP 32-pin TSOP (TYPE II) A11 A9 A8 A13 WE A18 A15 VDD A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A15 A18 WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 PIN DESCRIPTIONS A0-A18 CE OE WE I/O0-I/O7 VDD GND Address Inputs Chip Enable 1 Input Output Enable Input Write Enable Input Input/Output Power Ground Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 3 IS61C5128AL/AS TRUTH TABLE Mode Not Selected Output Disabled Read Write WE X H H L IS64C5128AL/AS CE H L L L OE X H L X I/O0-I/O7 High-Z High-Z DOUT DIN I/O PIN VDD Current ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2 ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +7.0 –65 to +150 1.5 20 Unit V °C W mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 5 7 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter VOH VOL VIH VIL ILI Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage GND ≤ VIN ≤ VDD Com. Ind. Auto. Com. Ind. Auto. Test Conditions VDD = Min., IOH = –4.0 mA VDD = Min., IOL = 8.0 mA Min. 2.4 — 2.2 –0.3 –1 –2 –5 –1 –2 –5 Max. — 0.4 VDD + 0.5 0.8 1 2 5 1 2 5 Unit V V V V µA ILO Output Leakage GND ≤ VOUT ≤ VDD Outputs Disabled µA Note: 1. VIL = –3.0V for pulse width less than 10 ns. 4 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 IS61C5128AL/AS IS64C5128AL/AS OPERATING RANGE: HIGH SPEED OPTION (IS61/64C5128AL) Range Commercial Industrial Automotive Ambient Temperature 0°C to +70°C -40°C to +85°C -40°C to +125°C VDD 5V ± 10% 5V ± 10% 5V ± 10% Speed (ns) 10 10 12 OPERATING RANGE: LOW POWER OPTION (IS61/64C5128AS) Range Commercial Industrial Automotive Ambient Temperature 0°C to +70°C -40°C to +85°C -40°C to +125°C VDD 5V ± 10% 5V ± 10% 5V ± 10% Speed (ns) 25 25 25 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 5 IS61C5128AL/AS IS64C5128AL/AS HIGH SPEED OPTION (IS61/64C5128AL) POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC1 VDD Operating Supply Current VDD Dynamic Operating Supply Current Test Conditions VDD = VDD MAX., CE = VIL IOUT = 0 mA, f = 0 VDD = VDD MAX., CE = VIL IOUT = 0 mA, f = fMAX Com. Ind. Auto. Com. Ind. Auto. typ.(2) Com. Ind. Auto. Com. Ind. Auto. typ.(2) -10 ns Min. Max. — — — — — — 30 — — — — — — 2 15 20 30 8 12 20 — — — — — — 45 50 55 50 55 70 -12 ns Min. Max. — — — — — — 25 15 20 30 8 12 20 mA 45 50 55 45 50 60 Unit mA ICC2 mA ISB1 TTL Standby Current (TTL Inputs) VDD = VDD MAX., VIN = VIH or VIL CE ≥ VIH, f = 0 VDD = VDD MAX., CE ≤ VDD – 0.2V, VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 ISB2 CMOS Standby Current (CMOS Inputs) mA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 5V, TA = 25% and not 100% tested. LOW POWER OPTION (IS61/64C5128AS) POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC Average operating Current VDD Dynamic Operating Supply Current Test Conditions CE = VIL, VDD = Max. I OUT= 0 mA, f= 0 VDD = Max., CE = VIL IOUT = 0 mA, f = fMAX Com. Ind. Auto. Com. Ind. Auto. typ.(2) Com. Ind. Auto. Com. Ind. Auto. typ. -25 ns Min. Max. — — — — — — 15 — — — — — — 0.2 1 1.5 2 0.8 0.9 2 mA 10 15 20 25 30 40 Unit mA ICC1 mA ISB1 TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) VDD = Max., VIN = VIH or VIL, CE ≥ VIH, f=0 VDD = Max., CE ≥ VDD – 0.2V, VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V, f = 0 ISB2 mA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 5V, TA = 25% and not 100% tested. 6 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 IS61C5128AL/AS IS64C5128AL/AS READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time OE to High-Z Output OE to Low-Z Output CE to High-Z Output CE to Low-Z Output -10 Min. Max. 10 — — 3 — — 0 0 0 2 10 — 10 5 5 — 5 — -12 Min. Max. 12 — — 3 — — 0 0 0 2 12 — 12 6 6 — 6 — -25 Min. Max. 25 — — 3 — — 0 2 0 2 25 — 25 15 8 — 8 — Unit ns ns ns ns ns ns ns ns ns tRC tAA tOHA tACE tDOE tHZOE(2) tLZOE(2) tHZCE(2) tLZCE(2) Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 3 ns 1.5V See Figures 1 and 2 AC TEST LOADS 480 Ω 5V 5V 480 Ω OUTPUT 30 pF Including jig and scope 255 Ω OUTPUT 5 pF Including jig and scope 255 Ω Figure 1 Figure 2 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 7 IS61C5128AL/AS AC WAVEFORMS READ CYCLE NO. 1(1,2) IS64C5128AL/AS t RC ADDRESS t AA t OHA DOUT PREVIOUS DATA VALID t OHA DATA VALID READ1.eps READ CYCLE NO. 2(1,3) t RC ADDRESS t AA OE t OHA t DOE CE t HZOE t LZOE t ACS t LZCS t HZCS DATA VALID CE_RD2.eps DOUT HIGH-Z Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. 8 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 IS61C5128AL/AS IS64C5128AL/AS WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range) Symbol Parameter -10 Min. Max. 10 7 7 0 0 7 7 6 0 — 3 — — — — — — — — — 6 — -12 Min. Max. 12 9 9 0 0 9 9 6 0 — 3 — — — — — — — — — 6 — -25 Min. Max. 25 18 18 0 0 15 15 15 0 — 5 — — — — — — — — — 15 — Unit ns ns ns ns ns ns ns ns ns ns ns tWC tSCE tAW tHA tSA tPWE1 tPWE2 tSD tHD tHZWE (2) Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time WE Pulse Width (OE =High) WE Pulse Width (OE=Low) Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output tLZWE(2) WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 9 IS61C5128AL/AS IS64C5128AL/AS AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2) t WC ADDRESS VALID ADDRESS t SA CE t SCS t HA WE t AW t PWE1 t PWE2 t HZWE t LZWE HIGH-Z DOUT DATA UNDEFINED t SD DIN t HD DATAIN VALID CE_WR1.eps Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE ≥ VIH. 10 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 IS61C5128AL/AS IS64C5128AL/AS WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) (1,2) t WC ADDRESS VALID ADDRESS t HA OE CE LOW t AW t PWE1 WE t SA DOUT DATA UNDEFINED t HZWE HIGH-Z t LZWE t SD DIN t HD DATAIN VALID CE_WR2.eps WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) (1) t WC ADDRESS OE CE VALID ADDRESS LOW t HA LOW t AW t PWE2 WE t SA DOUT DATA UNDEFINED t HZWE HIGH-Z t LZWE t SD DIN t HD DATAIN VALID CE_WR3.eps Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE ≥ VIH. Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 11 IS61C5128AL/AS IS64C5128AL/AS DATA RETENTION SWITCHING CHARACTERISTICS (HIGH SPEED) (IS61/64C5128AL) Symbol Parameter VDD for Data Retention Data Retention Current Test Condition See Data Retention Waveform VDD = 2.9V, CE ≥ VDD – 0.2V VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V Com. Ind. Auto. typ. (1) Min. 2.9 — — — 1 0 — — ns ns Max. 5.5 8 10 15 Unit V mA VDR IDR tSDR tRDR Note: Data Retention Setup Time Recovery Time See Data Retention Waveform See Data Retention Waveform tRC 1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested. DATA RETENTION WAVEFORM (CE Controlled) tSDR VDD 4.5V Data Retention Mode tRDR VDR CE ≥ VDD - 0.2V CE GND 12 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 IS61C5128AL/AS IS64C5128AL/AS DATA RETENTION SWITCHING CHARACTERISTICS (LOW POWER) (IS61/64C5128AS) Symbol Parameter VDD for Data Retention Data Retention Current Test Condition See Data Retention Waveform VDD = 2.9V, CE ≥ VDD – 0.2V VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V Com. Ind. Auto. typ. (1) Min. 2.9 — — — 0.2 0 — — ns ns Max. 5.5 0.8 0.9 2 Unit V mA VDR IDR tSDR tRDR Note: Data Retention Setup Time Recovery Time See Data Retention Waveform See Data Retention Waveform tRC 1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested. DATA RETENTION WAVEFORM (CE Controlled) tSDR VDD 4.5V Data Retention Mode tRDR VDR CE ≥ VDD - 0.2V CE GND Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 13 IS61C5128AL/AS IS64C5128AL/AS HIGH SPEED (IS61/64C5128AL) ORDERING INFORMATION Industrial Range: –40°C to +85°C Speed (ns) 10 Order Part No. IS61C5128AL-10KI IS61C5128AL-10KLI IS61C5128AL-10TI IS61C5128AL-10TLI Package 400-mil Plastic SOJ 400-mil Plastic SOJ, Lead-free 44-pin TSOP-II 44-pin TSOP-II, Lead-free Automotive Range: –40°C to +125°C Speed (ns) 12 Order Part No. IS64C5128AL-12KA3 IS64C5128AL-12TA3 IS64C5128AL-12TLA3 Package 400-mil Plastic SOJ 44-pin TSOP-II 44-pin TSOP-II, Lead-free LOW POWER (IS61/64C5128AS) ORDERING INFORMATION Industrial Range: –40°C to +85°C Speed (ns) 25 Order Part No. IS61C5128AS-25QI IS61C5128AS-25QLI IS61C5128AS-25HI IS61C5128AS-25HLI IS61C5128AS-25TI IS61C5128AS-25TLI Package 450-mil Plastic SOP 450-mil Plastic SOP, Lead-free 32-pin STSOP-I 32-pin STSOP-I, Lead-free 32-pin TSOP-II 32-pin TSOP-II, Lead-free 14 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 PACKAGING INFORMATION 450-mil Plastic SOP Package Code: Q (32-pin) N E1 E 1 D SEATING PLANE S A e B L A1 α C MILLIMETERS Symbol No. Leads A A1 B C D E E1 e L α S Min. Max. 32 — 3.00 0.10 — 0.36 0.51 0.15 0.30 20.14 20.75 13.87 14.38 11.18 11.43 1.27 BSC 0.58 0.99 0° 10° — 0.86 INCHES Min. Max. — 0.118 0.004 — 0.014 0.020 0.006 0.012 0.793 0.817 0.546 0.566 0.440 0.450 0.050 BSC 0.023 0.039 0° 10° — 0.034 Notes: 1. Controlling dimension: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 06/13/03 PACKAGING INFORMATION 400-mil Plastic SOJ Package Code: K N N/2+1 E1 E Notes: 1. Controlling dimension: millimeters. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Reference document: JEDEC MS-027. 1 N/2 D A SEATING PLANE b C A2 e B A1 E2 Symbol No. Leads A A1 A2 B b C D E E1 E2 e Millimeters Inches Min Max Min Max (N) 28 3.25 3.75 0.128 0.148 0.64 — 0.025 — 2.08 — 0.082 — 0.38 0.51 0.015 0.020 0.66 0.81 0.026 0.032 0.18 0.33 0.007 0.013 18.29 18.54 0.720 0.730 11.05 11.30 0.435 0.445 10.03 10.29 0.395 0.405 9.40 BSC 0.370 BSC 1.27 BSC 0.050 BSC Millimeters Min Max 32 3.25 3.75 0.64 — 2.08 — 0.38 0.51 0.66 0.81 0.18 0.33 20.82 21.08 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 0.820 0.830 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Millimeters Min Max 36 3.25 3.75 0.64 — 2.08 — 0.38 0.51 0.66 0.81 0.18 0.33 23.37 23.62 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 0.920 0.930 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 10/29/03 PACKAGING INFORMATION Millimeters Inches Symbol Min Max Min Max No. Leads (N) 40 A 3.25 3.75 0.128 0.148 A1 0.64 — 0.025 — A2 2.08 — 0.082 — B 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 C 0.18 0.33 0.007 0.013 D 25.91 26.16 1.020 1.030 E 11.05 11.30 0.435 0.445 E1 10.03 10.29 0.395 0.405 E2 9.40 BSC 0.370 BSC e 1.27 BSC 0.050 BSC Millimeters Min Max 42 3.25 3.75 0.64 — 2.08 — 0.38 0.51 0.66 0.81 0.18 0.33 27.18 27.43 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 1.070 1.080 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Millimeters Min Max 44 3.25 3.75 0.64 — 2.08 — 0.38 0.51 0.66 0.81 0.18 0.33 28.45 28.70 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 1.120 1.130 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Inches Min Max Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 10/29/03 PACKAGING INFORMATION Plastic STSOP - 32 pins Package Code: H (Type I) A2 A A1 1 N E b e D1 D S SEATING PLANE L α C Plastic STSOP (H - Type I) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 32 A — 1.25 — 0.049 A1 0.05 — 0.002 — A2 0.95 1.05 0.037 0.041 b 0.17 0.23 0.007 0.009 C 0.14 0.16 0.0055 0.0063 D 13.20 13.60 0.520 0.535 D1 11.70 11.90 0.461 0.469 E 7.90 8.10 0.311 0.319 e 0.50 BSC 0.020 BSC L 0.30 0.70 0.012 0.028 S 0.28 Typ. 0.011 Typ. α 0° 5° 0° 5° Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. Integrated Silicon Solution, Inc. PK13197H32 Rev. B 04/21/03 PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II) N N/2+1 E1 E Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. 1 D N/2 SEATING PLANE ZD A . e b L A1 α C Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD α Millimeters Min Max Inches Min Max Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0° 5° 0° 5° Millimeters Min Max 50 — 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0° 5° Inches Min Max (N) 32 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0° 5° 0° 5° — 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0° 5° Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 06/18/03