IS61LF25636B-7.5TQLI

IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM MARCH 2020 FEATURES DESCRIPTION • Internal self-timed write cycle The 9Mb product family features  high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF/VF25636B is organized as 262,144 words by 36 bits. The IS61(64)LF/VF51218B is organized as 524,288 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and highdrive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs and data outputs • Auto Power-down during deselect • Single cycle deselect • Snooze MODE for reduced-power standby • JTAG Boundary Scan for BGA package • Power Supply LF: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%) VF: Vdd 2.5V (+ 5%), Vddq 2.5V (+ 5%) VVF: Vdd 1.8V (+ 5%), Vddq 1.8V (+ 5%) • JEDEC 100-Pin QFP, 119-pin BGA, and 165-pin BGA packages • Lead-free available FAST ACCESS TIME Symbol tkq tkc Parameter Clock Access Time Cycle Time Frequency Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. Byte write operation is performed by using byte write enable (BWE) input combined with one or more individual byte write signals (BWx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the byte write controls. Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally and controlled by the ADV (burst address advance) input pin. The mode pin is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating. -6.5 6.5 7.5 133 -7.5 7.5 8.5 117 Units ns ns MHz Copyright © 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B BLOCK DIAGRAM MODE CLK Q0 /CKE BINARY COUNTER /ADV /CE /ADSC /ADSP /CLR D A0-x x18: x=18 x36: x=17 Q1 A0 A1 A0` A1` 256Kx36; 512Kx18 Memory Array Q ADDRESS REGISTER /CE CLK /GW /BWE /BW(a-x) x18:x=b, x32,x36:x=d D Q DQ(a-d) BYTE WRITE REGISTERS CLK /CE CE2 D /CE2 ENABLE REGISTERS ZZ Power Down Q INPUT REGISTER CLK OUTPUT REGISTER CLK DQ(a-x) x18:x=b, x32,x36:x=d CLK /OE 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 165-PIN BGA 165-Ball, 13x15 mm BGA 119-PIN BGA 119-Ball, 14x22 mm BGA BOTTOM VIEW BOTTOM VIEW Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 3 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 119 BGA PACKAGE PIN CONFIGURATION-256K x 36 (TOP VIEW) A B C D E F G H J K L M N P R T U 1 VDDQ NC NC DQc DQc VDDQ DQc DQc VDDQ DQd DQd VDDQ DQd DQd NC NC VDDQ 2 A CE2 A DQPc DQc DQc DQc DQc VDD DQd DQd DQd DQd DQPd A NC TMS 3 A A A Vss Vss Vss 4 ADSP ADSC VDD NC CE OE ADV GW VDD CLK NC BWc Vss NC Vss BWd Vss Vss Vss MODE A TDI BWE A1* A0* VDD A TCK 5 A A A Vss Vss Vss BWb Vss NC Vss BWa Vss Vss Vss NC A TDO 6 A A A DQPb DQb DQb DQb DQb VDD DQa DQa DQa DQa DQPa A NC NC 7 VDDQ NC NC DQb DQb VDDQ DQb DQb VDDQ DQa DQa VDDQ DQa DQa NC ZZ VDDQ Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. PIN DESCRIPTIONS Symbol A Pin Name Address Inputs A0, A1 Synchronous Burst Address Inputs ADV Synchronous Burst Address Advance ADSP Address Status Processor ADSC GW Address Status Controller Global Write Enable CLK CE, CE2 Synchronous Clock Synchronous Chip Select BWx (x=a-d) Synchronous Byte Write Controls BWE 4 Byte Write Enable Symbol OE Pin Name Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO JTAG Pins TMS, TDI NC No Connect DQa-DQd Data Inputs/Outputs DQPa-Pd Parity Data Inputs/Outputs Vdd Power Supply Vddq I/O Power Supply Vss Ground Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 119 BGA PACKAGE PIN CONFIGURATION 512Kx18 (TOP VIEW) 1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQb NC VDDQ NC DQb VDDQ NC DQb VDDQ DQb NC NC NC VDDQ 2 A CE2 A NC DQb NC DQb NC VDD DQb NC DQb NC DQPb A A TMS 3 A A A Vss Vss Vss BWb Vss NC Vss Vss Vss Vss Vss MODE A TDI 4 ADSP ADSC VDD NC CE OE ADV GW VDD CLK NC BWE A1* A 0* VDD NC TCK 5 A A A Vss Vss Vss Vss Vss NC Vss 6 A A A DQPa NC DQa NC DQa VDD NC DQa NC DQa NC A A NC BWa Vss Vss Vss NC A TDO 7 VDDQ NC NC NC DQa VDDQ DQa NC VDDQ DQa NC VDDQ NC DQa NC ZZ VDDQ Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. PIN DESCRIPTIONS Symbol A Pin Name Address Inputs A0, A1 Synchronous Burst Address Inputs ADV Synchronous Burst Address Advance ADSP Address Status Processor ADSC GW Address Status Controller Global Write Enable CLK CE, CE2 Synchronous Clock Synchronous Chip Select BWx (x=a,b) Synchronous Byte Write Controls BWE Byte Write Enable Symbol OE Pin Name Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO JTAG Pins TMS, TDI NC No Connect DQa-DQb Data Inputs/Outputs DQPa-Pb Parity Data Inputs/Outputs Vdd Power Supply Vddq I/O Power Supply Vss Ground Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 165 BGA PACKAGE PIN CONFIGURATION 256K x 36 (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 11 A NC A CE BWc BWb CE2 BWE ADSC ADV A NC B NC A CE2 BWd BWa CLK GW OE ADSP A NC C DQPc NC Vddq Vss Vss Vss Vss Vss Vddq NC DQPb D DQc DQc Vddq Vdd Vss Vss Vss Vdd Vddq DQb DQb E DQc DQc Vddq Vdd Vss Vss Vss Vdd Vddq DQb DQb F DQc DQc Vddq Vdd Vss Vss Vss Vdd Vddq DQb DQb G DQc DQc Vddq Vdd Vss Vss Vss Vdd Vddq DQb DQb H NC Vss NC Vdd Vss Vss Vss Vdd NC NC ZZ J DQd DQd Vddq Vdd Vss Vss Vss Vdd Vddq DQa DQa K DQd DQd Vddq Vdd Vss Vss Vss Vdd Vddq DQa DQa L DQd DQd Vddq Vdd Vss Vss Vss Vdd Vddq DQa DQa M DQd DQd Vddq Vdd Vss Vss Vss Vdd Vddq DQa DQa N DQPd NC Vddq Vss NC NC NC Vss Vddq NC DQPa P NC NC A A TDI A1* TDO A A A A R MODE NC A A TMS A0* TCK A A A A Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. PIN DESCRIPTIONS Symbol A Pin Name Address Inputs A0, A1 Synchronous Burst Address Inputs ADV Synchronous Burst Address Advance ADSP Address Status Processor ADSC GW Address Status Controller Global Write Enable CLK CE, CE2, CE2 Synchronous Clock Synchronous Chip Select BWx (x=a,b,c,d) Synchronous Byte Write Controls Symbol Pin Name BWE Byte Write Enable OE Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO TMS, TDI NC DQx DQPx Vdd Vddq JTAG Pins No Connect Data Inputs/Outputs Parity Data Inputs/Outputs Power Supply I/O Power Supply Vss Ground 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 165 BGA PACKAGE PIN CONFIGURATION 512K x 18 (TOP VIEW) A 1 2 3 4 5 6 7 8 9 10 11 NC A CE BWb NC CE2 BWE ADSC ADV A A B NC A CE2 NC BWa CLK GW OE ADSP A NC C NC NC Vddq Vss Vss Vss Vss Vss Vddq NC DQPa D NC DQb Vddq Vdd Vss Vss Vss Vdd Vddq NC DQa E NC DQb Vddq Vdd Vss Vss Vss Vdd Vddq NC DQa F NC DQb Vddq Vdd Vss Vss Vss Vdd Vddq NC DQa G NC DQb Vddq Vdd Vss Vss Vss Vdd Vddq NC DQa H NC Vss NC Vdd Vss Vss Vss Vdd NC NC ZZ J DQb NC Vddq Vdd Vss Vss Vss Vdd Vddq DQa NC K DQb NC Vddq Vdd Vss Vss Vss Vdd Vddq DQa NC L DQb NC Vddq Vdd Vss Vss Vss Vdd Vddq DQa NC M DQb NC Vddq Vdd Vss Vss Vss Vdd Vddq DQa NC N DQPb NC Vddq Vss NC NC NC Vss Vddq NC NC P NC NC A A TDI A1* TDO A A A A R MODE NC A A TMS A0* TCK A A A A Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. PIN DESCRIPTIONS Symbol A Pin Name Address Inputs A0, A1 Synchronous Burst Address Inputs ADV Synchronous Burst Address Advance ADSP Address Status Processor ADSC GW Address Status Controller Global Write Enable CLK CE, CE2, CE2 Synchronous Clock Synchronous Chip Select BWx (x=a,b) Synchronous Byte Write Controls Symbol Pin Name BWE Byte Write Enable OE Output Enable ZZ Power Sleep Mode MODE Burst Sequence Selection TCK, TDO TMS, TDI NC DQx DQPx Vdd Vddq JTAG Pins No Connect Data Inputs/Outputs Data Inputs/Outputs Power Supply I/O Power Supply Vss Ground Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 7 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B PIN CONFIGURATION DQPc 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQPb DQb DQb VDDQ VSS DQb DQb DQb DQb VSS VDDQ DQb DQb VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa DQa DQa VSS VDDQ DQa DQa DQPa DQPc DQc DQc VDDQ VSS DQc DQc DQc DQc VSS VDDQ DQc DQc NC VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd DQPd 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQPb DQb DQb VDDQ VSS DQb DQb DQb DQb VSS VDDQ DQb DQb VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa DQa DQa VSS VDDQ DQa DQa DQPa MODE A A A A A1 A0 NC NC VSS VDD NC NC A A A A A A A MODE A A A A A1 A0 NC NC VSS VDD NC A A A A A A A A DQc DQc VDDQ VSS DQc DQc DQc DQc VSS VDDQ DQc DQc NC VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd DQPd A A CE CE2 BWd BWc BWb BWa A VDD VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE CE2 BWd BWc BWb BWa CE2 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A 100-PIN QFP (256K X 36) (2 Chip-Enable option) (3 Chip-Enable option) PIN DESCRIPTIONS A0, A1 A Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. Synchronous Address Inputs ADSC Synchronous Controller Address Status ADSP Synchronous Processor Address Status ADV Synchronous Burst Address Advance BWa-BWd Synchronous Byte Write Enable BWE Synchronous Byte Write Enable CE, CE2, CE2 Synchronous Chip Enable CLK 8 DQa-DQd Synchronous Data Input/Output DQPa-DQPd Parity Data Input/Output GW Synchronous Global Write Enable MODE Burst Sequence Mode Selection OE Output Enable Vdd Power Supply Vddq I/O Power Supply Vss Ground ZZ Snooze Enable Synchronous Clock Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B PIN CONFIGURATION A NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC NC NC NC VDDQ VSS NC NC DQb DQb VSS VDDQ DQb DQb NC VDD NC VSS DQb DQb VDDQ VSS DQb DQb DQPb NC VSS VDDQ NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC MODE A A A A A1 A0 NC NC VSS VDD NC NC A A A A A A A 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 MODE A A A A A1 A0 NC NC VSS VDD NC A A A A A A A A NC NC NC VDDQ VSS NC NC DQb DQb VSS VDDQ DQb DQb NC VDD NC VSS DQb DQb VDDQ VSS DQb DQb DQPb NC VSS VDDQ NC NC NC A A CE CE2 NC NC BWb BWa A VDD VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE CE2 NC NC BWb BWa CE2 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A 100-PIN QFP (512K X 18) (3 Chip-Enable Option) (2 Chip-Enable Option) PIN DESCRIPTIONS A0, A1 Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. A Synchronous Address Inputs ADSC Synchronous Controller Address Status ADSP Synchronous Processor Address Status ADV Synchronous Burst Address Advance BWa-BWb Synchronous Byte Write Enable BWE Synchronous Byte Write Enable CE, CE2, CE2 Synchronous Chip Enable CLK Synchronous Clock DQa-DQb Synchronous Data Input/Output DQPa-DQPb Parity Data I/O; DQPa is parity for DQa1-8; DQPb is parity for DQb1-8 GW MODE Synchronous Global Write Enable Burst Sequence Mode Selection OE Vdd Vddq Vss ZZ Output Enable Power Supply I/O Power Supply Ground Snooze Enable Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 9 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B TRUTH TABLE(1-8) OPERATION ADDRESS CE CE2 CE2 ZZ ADSP ADSC ADV WRITE OE CLK DQ Deselect Cycle, Power-Down None H X X L X L X X X L-H High-Z Deselect Cycle, Power-Down None L X L L L X X X X L-H High-Z Deselect Cycle, Power-Down None L H X L L X X X X L-H High-Z Deselect Cycle, Power-Down None L X L L H L X X X L-H High-Z Deselect Cycle, Power-Down None L H X L H L X X X L-H High-Z Snooze Mode, Power-Down None X X X H X X X X X X High-Z Read Cycle, Begin Burst External L L H L L X X X L L-H Q Read Cycle, Begin Burst External L L H L L X X X H L-H High-Z Write Cycle, Begin Burst External L L H L H L X L X L-H D Read Cycle, Begin Burst External L L H L H L X H L L-H Q Read Cycle, Begin Burst External L L H L H L X H H L-H High-Z Read Cycle, Continue Burst Next X X X L H H L H L L-H Q Read Cycle, Continue Burst Next X X X L H H L H H L-H High-Z Read Cycle, Continue Burst Next H X X L X H L H L L-H Q Read Cycle, Continue Burst Next H X X L X H L H H L-H High-Z Write Cycle, Continue Burst Next X X X L H H L L X L-H D Write Cycle, Continue Burst Next H X X L X H L L X L-H D Read Cycle, Suspend Burst Current X X X L H H H H L L-H Q Read Cycle, Suspend Burst Current X X X L H H H H H L-H High-Z Read Cycle, Suspend Burst Current H X X L X H H H L L-H Q Read Cycle, Suspend Burst Current H X X L X H H H H L-H High-Z Write Cycle, Suspend Burst Current X X X L H H H L X L-H D Write Cycle, Suspend Burst Current H X X L X H H L X L-H D NOTE: 1. X means “Don’t Care.” H means logic HIGH. L means logic LOW. 2. For WRITE, L means one or more byte write enable signals (BWa-d) and BWE are LOW or GW is LOW. WRITE = H for all BWx, BWE, GW HIGH. 3. BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s  and DQPc. BWd enables WRITEs to DQd’s and DQPd. DQPa and DQPb are available on the x18 version.  DQPa-DQPd are available on the x36 version. 4. All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK. 5. Wait states are inserted by suspending burst. 6. For a WRITE operation following a READ operation, OE must be HIGH before the input data setup time and held HIGH during the input data hold time. 7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up. 8. ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write enable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification. PARTIAL TRUTH TABLE Function GW BWE BWa BWb BWc BWd Read H H X X X X Read H L H H H H Write Byte 1 H L L H H H Write All Bytes H L L L L L Write All Bytes L X X X X X 10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B POWER UP SEQUENCE Vddq → Vdd1 → I/O Pins2 Notes: 1. Vdd can be applied at the same time as Vddq 2. Applying I/O inputs is recommended after Vddq is ready. The inputs of the I/O pins can be applied at the same time as Vddq provided Vih (level of I/O pins) is lower than Vddq. POWER-UP INITIALIZATION TIMING VDD power > 1ms VDD VDDQ Device Initialization Device ready for normal operation INTERLEAVED BURST ADDRESS TABLE (MODE = Vdd or No Connect) External Address 1st Burst Address 2nd Burst Address 3rd Burst Address A1 A0 A1 A0 A1 A0 A1 A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 LINEAR BURST ADDRESS TABLE (MODE = VSS) 0,0 A1', A0' = 1,1     0,1 1,0 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 11 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameter Tstg Storage Temperature Pd Power Dissipation Iout Output Current (per I/O) Vin, Vout Voltage Relative to Vss for I/O Pins Vin Voltage Relative to Vss for for Address and Control Inputs Vdd Voltage on Vdd Supply Relative to Vss LF Value –55 to +150 1.6 100 –0.5 to Vddq + 0.5 –0.5 to Vdd + 0.5 VF/VVF Value –55 to +150 1.6 100 –0.5 to Vddq + 0.3 –0.5 to Vdd + 0.3 Unit °C W mA V V –0.5 to Vdd + 0.5 –0.3 to Vdd + 0.3 V Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit. 3. This device contains circuitry that will ensure the output devices are in High-Z at power up. OPERATING RANGE (IS61/64LFxxxxx) Range Ambient Temperature Commercial 0°C to +70°C Industrial -40°C to +85°C Automotive(A3) -40°C to +125°C Vdd 3.3V ± 5% 3.3V ± 5% 3.3V ± 5% Vddq 3.3V/2.5V ± 5% 3.3V/2.5V ± 5% 3.3V/2.5V ± 5% Vdd 2.5V ± 5% 2.5V ± 5% Vddq 2.5V ± 5% 2.5V ± 5% Vdd 1.8V ± 5% 1.8V ± 5% Vddq 1.8V ± 5% 1.8V ± 5% OPERATING RANGE (IS61VFxxxxx) Range Commercial Industrial Ambient Temperature 0°C to +70°C -40°C to +85°C OPERATING RANGE (IS61VVFxxxxx) Range Commercial Industrial 12 Ambient Temperature 0°C to +70°C -40°C to +85°C Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B DC ELECTRICAL CHARACTERISTICS (Over Operating Range) 1, 2, 3 3.3V 2.5V 1.8V Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit Voh Output HIGH Voltage Ioh = –4.0 mA  (3.3V) 2.4 — 2.0 — Vddq - 0.4 — V Ioh = –1.0 mA  (2.5V, 1.8V) Vol Output LOW Voltage Iol = 8.0 mA  (3.3V) — 0.4 — 0.4 — 0.4 V Iol = 1.0 mA  (2.5V, 1.8V) Vih Input HIGH Voltage 2.0 Vdd + 0.3 1.7 Vdd + 0.3 0.6Vdd Vdd + 0.3 V Vil Input LOW Voltage –0.3 0.8 –0.3 0.7 –0.3 0.3Vdd V (1) Ili Input Leakage Current Vss ≤ Vin ≤ Vdd –5 5 –5 5 –5 5 µA Ilo Output Leakage Current Vss ≤ Vout ≤ Vddq, OE = Vih –5 5 –5 5 –5 5 µA Notes: 1. All voltages referenced to ground. 2. Overshoot: 3.3V and 2.5V: Vih (AC) ≤ Vdd + 1.5V (Pulse width less than tkc /2) 1.8V: Vih (AC) ≤ Vdd + 0.5V (Pulse width less than tkc /2) 3. Undershoot: 3.3V and 2.5V: Vil (AC) ≥ -1.5V (Pulse width less than tkc /2) 1.8V: Vil (AC) ≥ -0.5V (Pulse width less than tkc /2) POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Icc AC Operating Supply Current Isb Standby Current TTL Input Isbi Standby Current CMOS Input Test Conditions Temp. range Device Selected, Com. OE = Vih, ZZ ≤ Vil, Ind. All Inputs ≤ 0.2V or ≥ Vdd – 0.2V, Auto. Cycle Time ≥ tkc min. Device Deselected, Com. Vdd = Max., Ind. All Inputs ≤ Vil or ≥ Vih, Auto. ZZ ≤ Vil, f = Max. Device Deselected, Com. Vdd = Max., Ind. Vin ≤ Vss + 0.2V or ≥Vdd – 0.2V Auto. f = 0 6.5 7.5 MAX MAX x18 x36 x18 x36 120 120 110 110 130 130 120 120 - - 125 125 Unit mA 65 65 65 65 70 70 70 70 - - 75 75 mA 50 50 50 50 55 55 55 55 - - 60 60 mA Note: 1. MODE pin has an internal pullup and should be tied to Vdd or Vss. It exhibits ±100 µA maximum leakage current when tied to ≤ Vss + 0.2V or ≥ Vdd – 0.2V. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 13 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B CAPACITANCE(1,2) Symbol Parameter Cin Input Capacitance Cout Input/Output Capacitance Conditions Vin = 0V Vout = 0V Max. Unit 6 pF 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V. 3.3V I/O AC TEST CONDITIONS Parameter Unit Input Pulse Level 0V to 3.0V Input Rise and Fall Times 1.5 ns Input and Output Timing 1.5V and Reference Level Output Load See Figures 1 and 2 AC TEST LOADS 317 Ω 3.3V ZO = 50Ω OUTPUT 50Ω 1.5V Figure 1 14 OUTPUT 5 pF Including jig and scope 351 Ω Figure 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 2.5V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 2.5V 1.5 ns 1.25V See Figures 3 and 4 2.5V I/O OUTPUT LOAD EQUIVALENT 1,667 Ω +2.5V ZO = 50Ω OUTPUT OUTPUT 50Ω 5 pF Including jig and scope 1,538 Ω 1.25V Figure 3 Figure 4 1.8V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 1.8V 1.5 ns 0.9V See Figures 5 and 6 1.8V I/O OUTPUT LOAD EQUIVALENT 1K Ω +1.8V ZO = 50Ω OUTPUT OUTPUT 50Ω 5 pF Including jig and scope 1K Ω 0.9V Figure 5 Figure 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 15 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B READ/WRITE CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)   Symbol Parameter fmax Clock Frequency tkc Cycle Time tkh Clock High Time tkl Clock Low Time tkq Clock Access Time (2) tkqx Clock High to Output Invalid tkqlz(2,3) Clock High to Output Low-Z tkqhz(2,3) Clock High to Output High-Z toeq Output Enable to Output Valid (2,3) toelz Output Enable to Output Low-Z toehz(2,3) Output Disable to Output High-Z tas Address Setup Time tss Address Status Setup Time tws Read/Write Setup Time tces Chip Enable Setup Time tavs Address Advance Setup Time tds Data Setup Time tah Address Hold Time tsh Address Status Hold Time twh Write Hold Time tceh Chip Enable Hold Time tavh Address Advance Hold Time tdh Data Hold Time (4) tpower Vdd (typical) to First Access Notes: 6.5 Min. Max. — 133 7.5 — 2.2 — 2.2 — — 6.5 2.5 — 2.5 — — 3.8 — 3.2 0 — — 3.5 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 1 — 7.5 Min. Max. — 117 8.5 — 2.5 — 2.5 — — 7.5 2.5 — 2.5 — — 4.0 — 3.4 0 — — 3.5 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 1 — Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms 1.  Configuration signal MODE is static and must not change during normal operation. 2.  Guaranteed but not 100% tested. This parameter is periodically sampled. 3.  Tested with load in Figure 2. 4. tpower is the time that the power needs to be supplied above Vdd (min) initially before READ or WRITE operation can be initiated. 16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B READ/WRITE CYCLE TIMING tKC CLK tSS tSH tKH tKL ADSP is blocked by CE inactive ADSP tSS tSH ADSC ADV tAS Address tAH RD1 WR1 tWS tWH tWS tWH RD2 RD3 GW BWE tWS tWH WR1 BWd-BWa tCES tCEH tCES tCEH tCES tCEH CE Masks ADSP CE CE2 and CE2 only sampled with ADSP or ADSC CE2 Unselected with CE2 CE2 tOELZ tOEHZ tOEQ OE tKQX DATAOUT High-Z High-Z tKQLZ tKQ 1a tKQLZ tKQ DATAIN 2a 2c 2d tKQHZ 1a High-Z tDS Single Read Flow-through tDH Single Write Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 2b tKQX Burst Read Unselected 17 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B WRITE CYCLE TIMING tKC CLK tSS tSH tKH tKL ADSP is blocked by CE1 inactive ADSP ADSC initiate Write ADSC ADV must be inactive for ADSP Write tAVS tAVH ADV tAS Address tAH WR1 WR2 tWS tWH tWS tWH tWS tWH WR3 GW BWE BWd-BWa WR1 tCES tCEH tCES tCEH tCES tCEH tWS tWH WR2 WR3 CE1 Masks ADSP CE Unselected with CE2 CE2 and CE3 only sampled with ADSP or ADSC CE2 CE2 OE DATAOUT High-Z tDS DATAIN High-Z Single Write 18 tDH 1a BW4-BW1 only are applied to first cycle of WR2 2a 2b 2c 2d Burst Write 3a Write Unselected Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B SNOOZE MODE ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Temp. Range Isb2 Current during SNOOZE MODE ZZ ≥ Vih Com. Ind. Auto. tpds ZZ active to input ignored tpus ZZ inactive to input sampled tzzi ZZ active to SNOOZE current trzzi ZZ inactive to exit SNOOZE current Min. — — — — 2 — 0 Max. Unit 15 mA 20 30 2 cycle — cycle 2 cycle — ns SNOOZE MODE TIMING CLK tPDS ZZ setup cycle tPUS ZZ recovery cycle ZZ tZZI Isupply ISB2 tRZZI All Inputs (except ZZ) Deselect or Read Only Deselect or Read Only Normal operation cycle Outputs (Q) High-Z Don't Care Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 19 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG) TEST ACCESS PORT (TAP) - TEST CLOCK The serial boundary scan Test Access Port (TAP) is only available in the BGA package. This port operates in accordance with IEEE Standard 1149.1-1900, but does not include all functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because they place added delay in the critical speed path of the SRAM. The TAP controller operates in a manner that does not conflict with the performance of other devices using 1149.1 fully compliant TAPs. The test clock is only used with the TAP controller. All inputs are captured on the rising edge of TCK and outputs are driven from the falling edge of TCK. DISABLING THE JTAG FEATURE TEST DATA-IN (TDI) The SRAM can operate without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (Vss) to prevent clocking of the device. TDI and TMS are internally pulled up and may be disconnected. They may alternately be connected to Vdd through a pull-up resistor. TDO should be left disconnected. On power-up, the device will start in a reset state which will not interfere with the device operation. TEST MODE SELECT (TMS) The TMS input is used to send commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left disconnected if the TAP is not used. The pin is internally pulled up, resulting in a logic HIGH level. The TDI pin is used to serially input information to the registers and can be connected to the input of any register. The register between TDI and TDO is chosen by the instruction loaded into the TAP instruction register. For information on instruction register loading, see the TAP Controller State Diagram. TDI is internally pulled up and can be disconnected if the TAP is unused in an application. TDI is connected to the Most Significant Bit (MSB) on any register. TAP CONTROLLER BLOCK DIAGRAM 0 Bypass Register 2 1 0 Instruction Register TDI Selection Circuitry 31 30 29 . . . Selection Circuitry 2 1 0 2 1 0 TDO Identification Register x . . . . . Boundary Scan Register* TCK TMS 20 TAP CONTROLLER Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B TEST DATA OUT (TDO) The TDO output pin is used to serially clock data-out from the registers. The output is active depending on the current state of the TAP state machine (see TAP Controller State Diagram). The output changes on the falling edge of TCK and TDO is connected to the Least Significant Bit (LSB) of any register. PERFORMING A TAP RESET A Reset is performed by forcing TMS HIGH (Vdd) for five rising edges of TCK. RESET may be performed while the SRAM is operating and does not affect its operation. At power-up, the TAP is internally reset to ensure that TDO comes up in a high-Z state. TAP REGISTERS Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK and output on the TDO pin on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins. (See TAP Controller Block Diagram)  At power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as previously described. When the TAP controller is in the CaptureIR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain states. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This allows data to be shifted through the SRAM with minimal delay. The bypass reg- ister is set LOW (Vss) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all input and output pins on the SRAM. Several no connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The x36 configuration has a 75-bit-long register and the x18 configuration also has a 75-bit-long register. The boundary scan register is loaded with the contents of the RAM Input and Output ring when the TAP controller is in the Capture-DR state and then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE-Z instructions can be used to capture the contents of the Input and Output ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Scan Register Sizes Register Name Bit Size Bit Size (x18) (x36) Instruction 3 3 Bypass 1 1 ID 32 32 Boundary Scan 90 90 Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded to the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has vendor code and other information described in the Identification Register Definitions table. IDENTIFICATION REGISTER DEFINITIONS Instruction Field Revision Number  (31:28) Device Depth  (27:23) Device Width  (22:18) ISSI Device ID  (17:12) ISSI JEDEC ID  (11:1) ID Register Presence  (0) Description Reserved for version number. Defines depth of SRAM. 256K or 512K Defines with of the SRAM. x36 or x18 Reserved for future use. Allows unique identification of SRAM vendor. Indicate the presence of an ID register. 256K x 36 xxxx 00111 00100 xxxxx 00001010101 1 512K x 18 xxxx 01000 00011 xxxxx 00001010101 1 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 21 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B TAP INSTRUCTION SET SAMPLE/PRELOAD Eight instructions are possible with the three-bit instruction register and all combinations are listed in the Instruction Code table. Three instructions are listed as RESERVED and should not be used and the other five instructions are described below. The TAP controller used in this SRAM is not fully compliant with the 1149.1 convention because some mandatory instructions are not fully implemented. The TAP controller cannot be used to load address, data or control signals and cannot preload the Input or Output buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/ PRELOAD; instead it performs a capture of the Inputs and Output ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted from the instruction register through the TDI and TDO pins. To execute an instruction once it is shifted in, the TAP controller must be moved into the Update-IR state. SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the TAP controller is not fully 1149.1 compliant. When the SAMPLE/PRELOAD instruction is loaded to the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. It is important to realize that the TAP controller clock operates at a frequency up to 10 MHz, while the SRAM clock runs more than an order of magnitude faster. Because of the clock frequency differences, it is possible that during the Capture-DR state, an input or output will under-go a transition. The TAP may attempt a signal capture while in transition (metastable state). The device will not be harmed, but there is no guarantee of the value that will be captured or repeatable results. To guarantee that the boundary scan register will capture the correct signal value, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture set-up plus hold times (tcs and tch). To insure that the SRAM clock input is captured correctly, designs need a way to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is not an issue, it is possible to capture all other signals and simply ignore the value of the CLK and CLK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Note that since the PRELOAD part of the command is not implemented, putting the TAP into the Update to the UpdateDR state while performing a SAMPLE/PRELOAD instruction will have the same effect as the Pause-DR command. EXTEST EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. Because EXTEST is not implemented in the TAP controller, this device is not 1149.1 standard compliant. The TAP controller recognizes an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is a difference between the instructions, unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO pins and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE-Z The SAMPLE-Z instruction causes the boundary scan register to be connected between the TDI and TDO pins when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. 22 BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. RESERVED These instructions are not implemented but are reserved for future use. Do not use these instructions. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B INSTRUCTION CODES Code 000 001 010 011 100 101 110 111 Instruction Description EXTEST Captures the Input/Output ring contents. Places the boundary scan register between the TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant. IDCODE Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE-Z Captures the Input/Output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD Captures the Input/Output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. RESERVED Do Not Use: This instruction is reserved for future use. RESERVED Do Not Use: This instruction is reserved for future use. BYPASS Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. TAP CONTROLLER STATE DIAGRAM Test Logic Reset 1 0 Run Test/Idle 1 Select DR 0 0 1 1 1 Capture DR 0 Shift DR 1 Exit1 DR 0 Select IR 0 1 Exit1 IR 0 Pause DR 0 1 0 1 Exit2 DR 1 Update DR 0 Capture IR 0 Shift IR 1 0 Pause IR 1 0 1 1 0 1 0 Exit2 IR 1 Update IR 0 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 23 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B TAP Electrical Characteristics (2.5V and 3.3V Operating Range) Symbol Voh1 Voh2 Vol1 Vol2 Vih Vil Ix Parameter Test Conditions Min. Max. Units Output HIGH Voltage Ioh = –2.0 mA 1.7 — V Output HIGH Voltage Ioh = –100 µA 2.1 — V Output LOW Voltage Iol = 2.0 mA — 0.7 V Output LOW Voltage Iol = 100 µA — 0.2 V Input HIGH Voltage 1.7 Vdd +0.3 V Input LOW Voltage Iolt = 2mA –0.3 0.7 V Input Load Current Vss ≤ V I ≤ Vddq –5 5 mA TAP Electrical Characteristics (1.8V Operating Range) Symbol Voh1 Vol1 Vih Vil Ix Parameter Test Conditions Min. Max. Units Output HIGH Voltage Ioh = –2.0 mA Vdd -0.4 — V Output LOW Voltage Iol = 2.0 mA -0.3 0.5 V Input HIGH Voltage 1.3 Vdd +0.3 V Input LOW Voltage Iolt = 2mA –0.3 0.7 V Input Load Current Vss ≤ V I ≤ Vddq –5 5 mA TAP AC ELECTRICAL CHARACTERISTICS (OVER OPERATING RANGE) Parameter Symbol Min Max Units TCK cycle time tTHTH 100 – ns TCK high pulse width tTHTL 40 – ns TCK low pulse width tTLTH 40 – ns TMS Setup tMVTH 10 – ns TMS Hold tTHMX 10 – ns TDI Setup tDVTH 10 – ns TDI Hold tTHDX 10 – ns TCK Low to Valid Data tTLOV – 20 ns 24 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B TAP AC TEST CONDITIONS (1.8V/2.5V/3.3V) Input pulse levels Input rise and fall times Input timing reference levels Output reference levels Test load termination supply voltage 0 to 1.8V/0 to 2.5V/0 to 3.0V 1.5ns 0.9V/1.25V/1.5V 0.9V/1.25V/1.5V 0.9V/1.25V/1.5V TAP Output Load Equivalent 50Ω 1.25V/1.5V TDO 20 pF Z0 = 50Ω GND TAP TIMING 1 2 tTHTH 3 4 5 6 tTLTH TCK tTHTL tMVTH tTHMX TMS tDVTH tTHDX TDI tTLOV TDO tTLOX DON'T CARE UNDEFINED Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 25 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 119 BGA BOUNDARY SCAN ORDER TBD 26 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 165 BGA BOUNDARY SCAN ORDER Bit # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 x36 Bump ID N6 N7 N10 P11 P8 R8 R9 P9 P10 R10 R11 H11 N11 M11 L11 M10 L10 K11 J11 K10 J10 H9 H10 G11 F11 G10 E11 D11 F10 E10 D10 C11 A11 B11 A10 B10 A9 B9 C10 A8 165 BGA Signal NC NC NC A8 A18 A17 A16 A15 A14 A13 A12 ZZ DQa0 DQa1 DQa2 DQa3 DQa4 DQa5 DQa6 DQa7 DQa8 NC NC DQb8 DQb7 DQb6 DQb5 DQb4 DQb3 DQb2 DQb1 DQb0 NC NC A11 A10 /ADV /ADSP NC /ADSC x18 Bump ID Signal N6 NC N7 NC N10 NC P11 A8 P8 A18 R8 A17 R9 A16 P9 A15 P10 A14 R10 A13 R11 A12 H11 ZZ N11 NC M11 NC L11 NC M10 DQa8 L10 DQa7 K11 NC J11 NC K10 DQa6 J10 DQa5 H9 NC H10 NC G11 DQa4 F11 DQa3 G10 NC E11 DQa2 D11 DQa1 C11 DQa0 E10 NC D10 NC F10 NC A11 A19 B11 NC A10 A11 B10 A10 A9 /ADV B9 /ADSP C10 NC A8 /ADSC Bit # 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 x36 Bump ID B8 A7 B7 B6 A6 B5 A5 A4 B4 B3 A3 A2 B2 C2 B1 A1 C1 D1 E1 D2 E2 F1 G1 F2 G2 H1 H2 H3 J1 K1 J2 L1 M1 K2 L2 M2 N1 N2 P1 R1 165 BGA Signal /OE /BWE /GW CLK /CE2 /Bwa /Bwb /Bwc /Bwd CE2 /CE1 A7 A6 NC NC NC DQc0 DQc1 DQc2 DQc3 DQc4 DQc5 DQc6 DQc7 DQc8 NC NC NC DQd8 DQd7 DQd6 DQd5 DQd4 DQd3 DQd2 DQd1 DQd0 NC NC MODE x18 Bump ID Signal B8 /OE A7 /BWE B7 /GW B6 CLK A6 /CE2 B5 /Bwa A5 NC A4 /Bwb B4 NC B3 CE2 A3 /CE1 A2 A7 B2 A6 C2 NC B1 NC A1 NC C1 NC D1 NC E1 NC D2 DQb8 E2 DQb7 F1 NC G1 NC F2 DQb6 G2 DQb5 H1 NC H2 NC H3 NC J1 DQb4 K1 DQb3 J2 NC L1 DQb2 M1 DQb1 N1 DQb0 L2 NC M2 NC K2 NC N2 NC P1 NC R1 MODE Continued on next page Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 27 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 165 BGA BOUNDARY SCAN ORDER 165 BGA Bit # 81 82 83 84 85 86 87 88 89 90 28 x36 Bump ID Signal R2 NC P3 A5 R3 A4 P2 NC P4 A2 R4 A3 N5 NC P6 A1 R6 A0 * Int x18 Bump ID Signal R2 NC P3 A5 R3 A4 P2 NC P4 A2 R4 A3 N5 NC P6 A1 R6 A0 * Int Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B ORDERING INFORMATION (Vdd = 3.3V/Vddq = 2.5V/3.3V) Industrial Range: -40°C to +85°C Configuration Access Time 256Kx36 6.5 256Kx36 7.5 512Kx18 6.5 512Kx18 7.5 Order Part Number IS61LF25636B-6.5TQI IS61LF25636B-6.5B2I IS61LF25636B-6.5B3I IS61LF25636B-7.5TQI IS61LF25636B-7.5TQLI IS61LF25636B-7.5B2I IS61LF25636B-7.5B3I IS61LF51218B-6.5TQI IS61LF51218B-6.5B2I IS61LF51218B-6.5B3I IS61LF51218B-7.5TQI IS61LF51218B-7.5TQLI IS61LF51218B-7.5B2I IS61LF51218B-7.5B3I Package(1) 100 QFP, 3CE 119 BGA 165 BGA 100 QFP, 3CE 100 QFP, 3CE, Lead-free 119 BGA 165 BGA 100 QFP, 3CE 119 BGA 165 BGA 100 QFP, 3CE 100 QFP, 3CE, Lead-free 119 BGA 165 BGA Note: 1. For 100 QFP, 2CE option contact SRAM Marketing at sram@issi.com Automotive (A3) Range: -40°C to +125°C Configuration Access Time 256Kx36 7.5 512Kx18 7.5 Order Part Number IS64LF25636B-7.5TQA3 IS64LF25636B-7.5TQLA3 IS64LF25636B-7.5B2A3 IS64LF25636B-7.5B3A3 IS64LF25636B-7.5B3LA3 IS64LF51218B-7.5TQA3 IS64LF51218B-7.5TQLA3 IS64LF51218B-7.5B2A3 IS64LF51218B-7.5B3A3 Package(1) 100 QFP, 3CE 100 QFP, 3CE, Lead-free 119 BGA 165 BGA 165 BGA, Lead-free 100 QFP, 3CE 100 QFP, 3CE, Lead-free 119 BGA 165 BGA Note: 1. For 100 QFP, 2CE option contact SRAM Marketing at sram@issi.com Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 29 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B ORDERING INFORMATION (Vdd = 2.5V /Vddq = 2.5V) Industrial Range: -40°C to +85°C Configuration Access Time 256Kx36 6.5 256Kx36 7.5 512Kx18 6.5 512Kx18 7.5 Order Part Number Package(1) IS61VF25636B-6.5TQI 100 QFP, 3CE IS61VF25636B-6.5B2I 119 BGA IS61VF25636B-6.5B3I 165 BGA IS61VF25636B-7.5TQI 100 QFP, 3CE IS61VF25636B-7.5B2I 119 BGA IS61VF25636B-7.5B3I 165 BGA IS61VF51218B-6.5TQI 100 QFP, 3CE IS61VF51218B-6.5B2I 119 BGA IS61VF51218B-6.5B3I 165 BGA IS61VF51218B-7.5TQI 100 QFP, 3CE IS61VF51218B-7.5B2I 119 BGA IS61VF51218B-7.5B3I 165 BGA Note: 1. For 100 QFP, 2CE option contact SRAM Marketing at sram@issi.com Automotive (A3) Range: -40°C to +125°C Configuration Access Time 256Kx36 7.5 512Kx18 7.5 Order Part Number IS64VF25636B-7.5TQA3 IS64VF25636B-7.5TQLA3 IS64VF25636B-7.5B2A3 IS64VF25636B-7.5B3A3 IS64VF51218B-7.5TQA3 IS64VF51218B-7.5TQLA3 IS64VF51218B-7.5B2A3 IS64VF51218B-7.5B3A3 Package(1) 100 QFP, 3CE 100 QFP, 3CE, Lead-free 119 BGA 165 BGA 100 QFP, 3CE 100 QFP, 3CE, Lead-free 119 BGA 165 BGA Note: 1. For 100 QFP, 2CE option contact SRAM Marketing at sram@issi.com 30 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 31 Rev. B2 03/04/2020 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B 32 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B2 03/04/2020 Package Outline 1. CONTROLLING DIMENSION : MM . NOTE : 08/28/2008 IS61(64)LF25636B, IS61VF/VVF25636B IS61(64)LF51218B, IS61VF/VVF51218B Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 33 Rev. B2 03/04/2020