IS61LV3216L-15TI

IS61LV3216L 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 130 mW (typical) operating — 150 µW (typical) standby • TTL compatible interface levels • Single 3.3V + 10%, –5% power supply for 10 and 12 ns • Single 3.3V ± 10% power supply for 15 and 20 ns • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Available in 44-pin 400-mil SOJ package and 44-pin TSOP (Type II) ISSI ® DECEMBER 2000 DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 µW (typical) with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV3216L is packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II). FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 32K x 16 MEMORY ARRAY VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CE OE WE UB LB CONTROL CIRCUIT ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 12/19/00 1 IS61LV3216L PIN CONFIGURATIONS 44-Pin SOJ NC A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC ISSI 44-Pin TSOP (TYPE II) NC A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 ® A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC PIN DESCRIPTIONS A0-A14 I/O0-I/O15 CE OE WE Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input LB UB NC Vcc GND Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground TRUTH TABLE Mode Not Selected Output Disabled Read WE X H X H H H L L L CE H L L L L L L L L OE X H X L L L X X X LB X X H L H L L H L UB X X H H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Vcc Current ISB1, ISB2 ICC ICC Write ICC 2 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 12/19/00 IS61LV3216L ABSOLUTE MAXIMUM RATINGS(1) Symbol VCC VTERM TSTG PT IOUT Parameter Supply Voltage with Respect to GND Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +4.6 –0.5 to Vcc + 0.5 –65 to +150 1.0 20 Unit V V °C W mA ISSI ® 1 2 3 4 VCC 15 ns, 20 ns 3.3V ± 10% 3.3V ± 10% Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. OPERATING RANGE Range Commercial Industrial Ambient Temperature 0°C to + 70°C –40°C to + 85°C VCC 10 ns, 12 ns 3.3V +10%, –5% 3.3V +10%, –5% 5 Unit V V V V µA µA DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND - VIN - VCC GND - VOUT - VCC, Outputs Disabled Test Conditions VCC = Min., IOH = –4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 — 2 –0.3 –1 –2 Max. — 0.4 VCC + 0.3 0.8 1 2 6 7 8 9 Note: 1. VIL (min.) = –3.0V for pulse width less than 10 ns. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB1 Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL CE • VIH , f = 0 VCC = Max., CE • VCC – 0.2V, VIN • VCC – 0.2V, or VIN - 0.2V, f = 0 Com. Ind. Com. Ind. Com. Ind. -10 ns Min. Max. — — — — — — 130 — 10 — 1 — -12 ns Min. Max. — — — — — — 120 130 10 10 1 1 -15 ns Min. Max. — — — — — — 110 120 10 10 1 1 -20 ns Min. Max. — — — — — — 100 110 10 10 1 1 Unit mA mA 10 11 12 ISB2 mA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 12/19/00 3 IS61LV3216L CAPACITANCE(1) Symbol CIN COUT Parameter Input Capacitance Input/Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF ISSI ® Note: 1. Tested initially and after any design or process changes that may affect these parameters. READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time (2) (2 -10 Min. Max. 10 — 3 — — 0 0 0 3 — 0 5 — 10 — 10 5 5 — 5 — 5 5 — -12 Min. Max. 12 — 3 — — 0 0 0 3 — 0 5 — 12 — 12 6 6 — 6 — 6 6 — -15 Min. Max. 15 — 3 — — 0 0 0 3 — 0 5 — 15 — 15 7 7 — 7 — 7 7 — -20 Min. Max. 20 — 3 — — 0 0 0 3 — 0 5 — 20 — 20 8 8 — 8 — 8 8 — Unit ns ns ns ns ns ns ns ns ns ns ns ns tRC tAA tOHA tACE tDOE tLZOE tHZOE(2) OE to High-Z Output OE to Low-Z Output CE to High-Z Output LB, UB Access Time LB, UB to High-Z Output LB, UB to Low-Z Output tHZCE tBA tHZB tLZB tLZCE(2) CE to Low-Z Output Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 3 ns 1.5V See Figures 1a and 1b 319 Ω 3.3V 3.3V 319 Ω AC TEST LOADS OUTPUT 30 pF Including jig and scope OUTPUT 353 Ω 5 pF Including jig and scope 353 Ω Figure 1a. 4 Figure 1b. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 12/19/00 IS61LV3216L AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL) tRC ISSI ® 1 2 ADDRESS tAA tOHA tOHA DATA VALID DOUT PREVIOUS DATA VALID 3 4 READ CYCLE NO. 2(1,3) tRC 5 tOHA ADDRESS tAA OE tDOE tHZOE 6 7 CE tLZCE tLZOE tACE tHZCE LB, UB tBA tHZB DATA VALID 8 HIGH-Z tLZB DOUT 9 10 11 12 Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 12/19/00 5 IS61LV3216L WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range) Symbol Parameter Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time LB, UB Valid to End of Write WE Pulse Width Data Setup to Write End Data Hold from Write End (2) ISSI -10 Min. Max. 10 8 9 1 0 9 7 5 0 — 1 — — — — — — — — — 5 — -12 Min. Max. 12 9 10 1 0 10 8 6 0 — 1 — — — — — — — — — 6 — -15 Min. Max. 15 10 10 1 0 11 10 7 0 — 1 — — — — — — — — — 7 — -20 Min. Max. 20 12 12 1 0 12 11 — 0 — 1 — — — — — — — 8 — 8 — Unit ns ns ns ns ns ns ns ns ns ns ns ® tWC tSCE tAW tHA tSA tPWB tPWE tSD tHD tHZWE WE LOW to High-Z Output tLZWE(2) WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 6 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 12/19/00 IS61LV3216L AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2) ISSI tWC ® 1 ADDRESS tSCE tHA 2 3 tPWB tAW tPWE CE LB, UB 4 5 WE tSA WRITE(1) tSD tHD 6 7 tHZWE tLZWE UNDEFINED HIGH-Z UNDEFINED HIGH-Z DIN DOUT 8 9 10 11 12 Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = (CE) [ (LB) = (UB) ] (WE). Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 12/19/00 7 IS61LV3216L ISSI ORDERING INFORMATION Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 12 15 20 Package Package Plastic TSOP (Type II) 400-mil Plastic SOJ Plastic TSOP (Type II) 400-mil Plastic SOJ Plastic TSOP (Type II) 400-mil Plastic SOJ Plastic TSOP (Type II) 400-mil Plastic SOJ ® ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 10 12 15 20 IS61LV3216L-10T IS61LV3216L-10K IS61LV3216L-12T IS61LV3216L-12K IS61LV3216L-15T IS61LV3216L-15K IS61LV3216L-20T IS61LV3216L-20K IS61LV3216L-12TI Plastic TSOP (Type II) IS61LV3216L-12KI 400-mil Plastic SOJ IS61LV3216L-15TI Plastic TSOP (Type II) IS61LV3216L-15KI 400-mil Plastic SOJ IS61LV3216L-20TI Plastic TSOP (Type II) IS61LV3216L-20KI 400-mil Plastic SOJ ISSI ® Integrated Silicon Solution, Inc. 2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: sales@issi.com www.issi.com 8 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 12/19/00