IS61NVP409618B-250B3L

IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  2M x 36 and 4M x 18 72Mb, PIPELINE 'NO WAIT' STATE BUS SRAM JULY 2019 FEATURES DESCRIPTION • 100 percent bus utilization The 72 Meg product family features high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for networking and communications applications. They are organized as 2,096,952 words by 36 bits and 4,193,904 words by 18 bits, fabricated with ISSI's advanced CMOS technology. • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining • Power Down mode • Common data inputs and data outputs • CKE pin to enable clock and suspend operation • JEDEC 100-pin TQFP, 165-ball PBGA and 119ball PBGA packages • Power supply: NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%) NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%) NVVP: Vdd 1.8V (± 5%), Vddq 1.8V (± 5%) Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written. A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected. • JTAG Boundary Scan for PBGA packages • Industrial temperature available • Lead-free available FAST ACCESS TIME Symbol tkq tkc Parameter Clock Access Time Cycle Time Frequency 250 2.8 4 250 200 3.1 5 200 166 3.8 6 166 Units ns ns MHz Copyright © 2019 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  BLOCK DIAGRAM A0-20 ( A0-21) A0-20(A0-21) Address Registers MODE ADV 2Mx36; 4Mx18 Memory Array Burst Logic A0-A1 A'0-A'1 K K Address Registers CLK A0-20 ( A0-21) A2-20(A2-A21) Address Registers /CKE Data-In Register K /CE Control register CE2 /CE2 ADV /WE /BWx (X=a,b,c,d or a,b) Data-In Register Control Logic K /OE Output Buffers ZZ 36(18) DQx/DQPx 2 K Output Register K Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  119-pin BGA 165-pin BGA 119-Ball, 14x22 mm BGA 1.27 mm Ball Pitch, 7 x 17 Ball Array 165-Ball, 13x15 mm BGA 165-Ball, 15x17 mm BGA 1 mm Ball Pitch, 11 x 15 Ball Array Bottom View Bottom View Integrated Silicon Solution, Inc. — www.issi.com 3 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Pin Configuration — ­ 2M x 36, 165-Ball PBGA (Top View) 1 2 3 4 5 6 7 8 9 10 11 A NC A CE BWc BWb CE2 CKE ADV A A NC B NC A CE2 BWd BWa CLK WE OE A A NC C DQPc NC VDDQ VSS VSS VSS VSS VSS VDDQ NC DQPb D DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb E DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb F DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb G DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb H NC NC NC VDD VSS VSS VSS VDD NC NC ZZ J DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa K DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa L DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa M DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa N DQPd NC VDDQ VSS NC NC NC VSS VDDQ NC DQPa P NC A A A TDI A1* TDO A A A NC R MODE A A A TMS A0* TCK A A A A Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. PIN DESCRIPTIONS Symbol A A0, A1 ADV Pin Name Synchronous Address Inputs Synchronous Burst Address Inputs Synchronous Burst Address Advance/ Load WE Synchronous Read/Write Control Input CLK Synchronous Clock CKE Synchronous Clock Enable CE, CE2, CE2 Synchronous Chip Enable BWa-BWd Synchronous Byte Write Inputs OE Asynchronous Output Enable ZZ Asynchronous Power Sleep Mode 4 MODE TCK, TDI TDO, TMS VDD NC DQa-DQd Burst Sequence Selection JTAG Pins Power Supply No Connect Synchronous Data Inputs/Outputs DQPa-DQPd Synchronous Parity Data Inputs/Outputs VDDQ Vss I/O Power Supply Ground Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  119-PIN PBGA PACKAGE CONFIGURATION 2M x 36 (TOP VIEW) 1 2 3 4 5 6 7 A VDDQ A A A A A VDDQ B NC CE2 A ADV A CE2 NC C NC A A VDD A A NC D DQc DQPc VSS NC VSS DQPb DQb E DQc DQc VSS CE VSS DQb DQb F VDDQ DQc VSS OE VSS DQb VDDQ G DQc DQc BWc A BWb DQb DQb H DQc DQc VSS WE VSS DQb DQb J VDDQ VDD NC VDD NC VDD VDDQ K DQd DQd VSS CLK VSS DQa DQa L DQd DQd BWd NC BWa DQa DQa M VDDQ DQd VSS CKE VSS DQa VDDQ N DQd DQd VSS A1* VSS DQa DQa P DQd DQPd VSS A0* VSS DQPa DQa R NC A MODE VDD NC A NC T NC A A A A A ZZ U VDDQ TMS TDI TCK TDO NC VDDQ Note: A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired. PIN DESCRIPTIONS Symbol A A0, A1 ADV WE CLK CKE CE CE2 CE2 BWa-BWd Pin Name Synchronous Address Inputs Synchronous Burst Address Inputs Synchronous Burst Address Advance/ Load Synchronous Read/Write Control Input Synchronous Clock Synchronous Clock Enable Synchronous Chip Select Synchronous Chip Select Synchronous Chip Select Synchronous Byte Write Inputs Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019 OE ZZ MODE TCK, TDO TMS, TDI Vdd Vss NC DQa-DQd Asynchronous Output Enable Asynchronous Power Sleep Mode Burst Sequence Selection JTAG Pins Power Supply Ground No Connect Synchronous Data Inputs/Outputs DQPa-DQPd Synchronous Parity Data Inputs/Outputs Vddq I/O Power Supply 5   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  165-PIN PBGA PACKAGE CONFIGURATION 4M x 18 (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 11 A NC A CE BWb NC CE2 CKE ADV A A A B NC A CE2 NC BWa CLK WE OE A A NC C NC NC VDDQ VSS VSS VSS VSS VSS VDDQ NC DQPa D NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa E NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa F NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa G NC DQb VDDQ VDD VSS VSS VSS VDD VDDQ NC DQa H NC NC NC VDD VSS VSS VSS VDD NC NC ZZ J DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC K DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC L DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC M DQb NC VDDQ VDD VSS VSS VSS VDD VDDQ DQa NC N DQPb NC VDDQ VSS NC NC NC VSS VDDQ NC NC P NC A A A TDI A1* TDO A A A NC R MODE A A A TMS A0* TCK A A A A Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. PIN DESCRIPTIONS Symbol A A0, A1 ADV Pin Name Synchronous Address Inputs Synchronous Burst Address Inputs Synchronous Burst Address Advance/ Load WE Synchronous Read/Write Control Input CLK Synchronous Clock CKE Synchronous Clock Enable CE, CE2, CE2 Synchronous Chip Enable BWa-BWb Synchronous Byte Write Inputs OE Asynchronous Output Enable ZZ Asynchronous Power Sleep Mode 6 MODE TCK, TDI TDO, TMS VDD NC DQa-DQb Burst Sequence Selection JTAG Pins Power Supply No Connect Synchronous Data Inputs/Outputs DQPa-DQPb Synchronous Parity Data Inputs/Outputs VDDQ Vss I/O Power Supply Ground Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  119-PIN PBGA PACKAGE CONFIGURATION 4M x 18 (TOP VIEW) 1 2 3 4 5 6 7 A VDDQ A A A A A VDDQ B NC CE2 A ADV A CE2 NC C NC A A VDD A A NC D DQb NC VSS NC VSS DQPa NC E NC DQb VSS CE VSS NC DQa F VDDQ NC VSS OE VSS DQa VDDQ G NC DQb BWb A NC NC DQa H DQb NC VSS WE VSS DQa NC J VDDQ VDD NC VDD NC VDD VDDQ K NC DQb VSS CLK VSS NC DQa L DQb NC NC NC BWa DQa NC M VDDQ DQb VSS CKE VSS NC VDDQ N DQb NC VSS A1* VSS DQa NC P NC DQPb VSS A0* VSS NC DQa R NC A MODE VDD NC A NC T A A A A A A ZZ U VDDQ TMS TDI TCK TDO NC VDDQ Note: A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired. PIN DESCRIPTIONS Symbol A A0, A1 ADV WE CLK CKE CE CE2 CE2 BWa-BWb Pin Name Synchronous Address Inputs Synchronous Burst Address Inputs Synchronous Burst Address Advance/ Load Synchronous Read/Write Control Input Synchronous Clock Synchronous Clock Enable Synchronous Chip Select Synchronous Chip Select Synchronous Chip Select Synchronous Byte Write Inputs MODE TCK, TDO TMS, TDI Vdd Vss NC DQa-DQb OE ZZ Asynchronous Output Enable Asynchronous Power Sleep Mode Burst Sequence Selection JTAG Pins Power Supply Ground No Connect Synchronous Data Inputs/Outputs DQPa-DQPb Synchronous Parity Data Inputs/Outputs Vddq I/O Power Supply Integrated Silicon Solution, Inc. — www.issi.com 7 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  PIN CONFIGURATION DQd VDDQ Vss DQd DQd DQd DQd Vss VDDQ MODE DQd DQd DQPd A OE ADV A CKE CLK WE CE2 VDD Vss BWa BWc BWb BWd CE2 CE A A DQPb DQb DQb VDDQ Vss DQb DQb DQb DQb Vss VDDQ DQb DQb Vss NC VDD ZZ DQa DQa VDDQ Vss DQa DQa DQa DQa Vss VDDQ DQa DQa DQPa A A DQd A NC Vss A DQc NC VDD A DQc A A A VDDQ A Vss Vss DQc VDD DQc NC NC DQc DQc A1 A0 Vss A VDDQ A DQc A DQc 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A DQPc A A 100-Pin TQFP 2M x 36 PIN DESCRIPTIONS A0, A1 A CLK ADV BWa-BWd WE CKE Vss NC 8 Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. Synchronous Address Inputs Synchronous Clock Synchronous Burst Address Advance Synchronous Byte Write Enable Synchronous Write Enable Synchronous Clock Enable Ground for Core Not Connected CE, CE2, CE2 OE DQa-DQd Synchronous Chip Enable Asynchronous Output Enable Synchronous Data Inputs/Outputs DQPa-DQPd Synchronous Parity Data Inputs/Outputs MODE Vdd Vss Vddq ZZ Burst Sequence Selection Power Supply Ground for output Buffer I/O Power Supply Asynchronous Snooze Enable Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  PIN CONFIGURATION DQb DQPb NC Vss VDDQ MODE NC NC NC A ADV A OE CLK WE CKE CE2 VDD Vss BWa NC BWb NC CE2 CE A A A NC NC VDDQ Vss NC DQPa DQa DQa Vss VDDQ DQa DQa Vss NC VDD ZZ DQa DQa VDDQ Vss DQa DQa NC NC Vss VDDQ NC NC NC A A Vss DQb A DQb VDDQ A DQb A NC Vss A A A DQb NC VDD A DQb VDD VDDQ Vss DQb Vss NC NC DQb A1 A0 NC NC A VDDQ Vss A NC A NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A NC A A 100-Pin TQFP 4M x 18 PIN DESCRIPTIONS A0, A1 A CLK ADV BWa-BWb WE CKE Vss NC Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. Synchronous Address Inputs Synchronous Clock Synchronous Burst Address Advance Synchronous Byte Write Enable Synchronous Write Enable Synchronous Clock Enable Ground for Core Not Connected CE, CE2, CE2 OE DQa-DQb Synchronous Chip Enable Asynchronous Output Enable Synchronous Data Inputs/Outputs DQPa-DQPb Synchronous Parity Data Inputs/Outputs MODE Vdd Vss Vddq ZZ Burst Sequence Selection Power Supply Ground for output Buffer I/O Power Supply Asynchronous Snooze Enable Integrated Silicon Solution, Inc. — www.issi.com 9 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  STATE DIAGRAM READ READ READ BURST WRITE BEGIN READ DS DS READ WRITE DESELECT BURST BURST READ BEGIN WRITE BURST DS BURST DS DS WRITE READ BURST WRITE WRITE WRITE BURST SYNCHRONOUS TRUTH TABLE(1) Address Operation Used CE CE2 CE2 Not Selected N/A H X X Not Selected N/A X L X Not Selected N/A X X H Not Selected Continue N/A X X X Begin Burst Read External Address L H L Continue Burst Read Next Address X X X NOP/Dummy Read External Address L H L Dummy Read Next Address X X X Begin Burst Write External Address L H L Continue Burst Write Next Address X X X NOP/Write Abort N/A L H L Write Abort Next Address X X X Ignore Clock Current Address X X X Notes: ADV WE L X L X L X H X L H H X L H H X L L H X L L H X X X BWx X X X X X X X X L L H H X OE X X X X L L H H X X X X X CKE L L L L L L L L L L L L H CLK ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ ↑ 1. "X" means don't care. 2. The rising edge of clock is symbolized by ↑ 3. A continue deselect cycle can only be entered if a deselect cycle is executed first. 4. WE = L means Write operation in Write Truth Table. WE = H means Read operation in Write Truth Table. 5. Operation finally depends on status of asynchronous pins (ZZ and OE). 10 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  ASYNCHRONOUS TRUTH TABLE(1) Operation ZZ OE Sleep Mode H X Read L L L H Write L X Deselected L X Notes: I/O STATUS High-Z DQ High-Z Din, High-Z High-Z 1. X means "Don't Care". 2. For write cycles following read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur. 3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time. 4. Deselected means power Sleep Mode where stand-by current depends on cycle time. WRITE TRUTH TABLE (x18) Operation READ WRITE BYTE a WRITE BYTE b WRITE ALL BYTEs WRITE ABORT/NOP Notes: WE BWa BWb H X X L L H L H L L L L L H H 1. X means "Don't Care". 2. All inputs in this table must beet setup and hold time around the rising edge of CLK. Integrated Silicon Solution, Inc. — www.issi.com 11 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  WRITE TRUTH TABLE (x36) Operation READ WRITE BYTE a WRITE BYTE b WRITE BYTE c WRITE BYTE d WRITE ALL BYTEs WRITE ABORT/NOP Notes: WE BWa BWb BWc BWd H X X X X L L H H H L H L H H L H H L H L H H H L L L L L L L H H H H 1. X means "Don't Care". 2. All inputs in this table must beet setup and hold time around the rising edge of CLK. Power Up Sequence Vddq → Vdd1 → I/O Pins2 Notes: 1. Vdd can be applied at the same time as Vddq 2. Applying I/O inputs is recommended after Vddq is ready. The inputs of the I/O pins can be applied at the same time as Vddq provided Vih (level of I/O pins) is lower than Vddq. Power-UP INITIALIZATION TIMING VDD power > 1ms VDD VDDQ Device Initialization Device ready for normal operation INTERLEAVED BURST ADDRESS TABLE (MODE = Vdd or NC) External Address 1st Burst Address 2nd Burst Address 3rd Burst Address A1 A0 A1 A0 A1 A0 A1 A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 12 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  LINEAR BURST ADDRESS TABLE (MODE = Vss)   0,0 A1', A0' = 1,1 0,1 1,0 ABSOLUTE MAXIMUM RATINGS(1) Symbol Tstg Pd Iout Vin, Vout Vin Parameter Storage Temperature Power Dissipation Output Current (per I/O) Voltage Relative to Vss for I/O Pins Voltage Relative to Vss for for Address and Control Inputs NLP Value –65 to +150 1.6 100 –0.5 to Vddq + 0.3 –0.3 to Vdd+0.5 NVP/NVVP Value –65 to +150 1.6 100 –0.5 to Vddq + 0.3 –0.3 to Vdd+0.3 Unit °C W mA V V Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit. 3. This device contains circuitry that will ensure the output devices are in High-Z at power up. OPERATING RANGE (IS61NLPx) Range Commercial Industrial Ambient Temperature 0°C to +70°C -40°C to +85°C Vdd 3.3V ± 5% 3.3V ± 5% Vddq 3.3V / 2.5V ± 5% 3.3V / 2.5V ± 5% Vdd 2.5V ± 5% 2.5V ± 5% Vddq 2.5V ± 5% 2.5V ± 5% Vdd 1.8V ± 5% 1.8V ± 5% Vddq 1.8V ± 5% 1.8V ± 5% OPERATING RANGE (IS61NVPx) Range Commercial Industrial Ambient Temperature 0°C to +70°C -40°C to +85°C OPERATING RANGE (IS61NVVPx) Range Commercial Industrial Ambient Temperature 0°C to +70°C -40°C to +85°C Integrated Silicon Solution, Inc. — www.issi.com 13 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  DC ELECTRICAL CHARACTERISTICS (Over Operating Range) 1, 2, 3 3.3V 2.5V 1.8V Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit Voh Output HIGH Voltage Ioh = –4.0 mA  (3.3V) 2.4 — 2.0 — Vddq - 0.4 — V Ioh = –1.0 mA  (2.5V, 1.8V) Vol Output LOW Voltage Iol = 8.0 mA  (3.3V) — 0.4 — 0.4 — 0.4 V Iol = 1.0 mA  (2.5V, 1.8V) Vih Input HIGH Voltage 2.0 Vdd + 0.3 1.7 Vdd + 0.3 0.6Vdd Vdd + 0.3 V Vil Input LOW Voltage –0.3 0.8 –0.3 0.7 –0.3 0.3Vdd V (1,4) Ili Input Leakage Current Vss ≤ Vin ≤ Vdd –5 5 –5 5 –5 5 µA Input Current of MODE Vss ≤ Vin ≤ Vdd(5) –30 5 –30 5 –30 5 Input Current of ZZ Vss ≤ Vin ≤ Vdd(6) –5 30 –5 30 –5 30 Ilo Output Leakage Current Vss ≤ Vout ≤ Vddq, OE = Vih –5 5 –5 5 –5 5 µA Notes: 1. All voltages referenced to ground. 2. Overshoot: 3.3V and 2.5V: Vih (AC) ≤ Vdd + 1.5V (Pulse width less than tkc /2) 1.8V: Vih (AC) ≤ Vdd + 0.5V (Pulse width less than tkc /2) 3. Undershoot: 3.3V and 2.5V: Vil (AC) ≥ -1.5V (Pulse width less than tkc /2) 1.8V: Vil (AC) ≥ -0.5V (Pulse width less than tkc /2) 4. Except MODE and ZZ 5. MODE is connected to pull-up resister internally. 6. ZZ is connected to pull-down resister internally. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -250 -200 -166 MAX MAX MAX Symbol Parameter Test Conditions Temp. range x18 x36 x18 x36 x18 x36 Unit Icc AC Operating Device Selected, Com. 450 450 400 400 350 350 mA Supply Current OE = Vih, ZZ ≤ Vil, Ind. 500 500 450 450 400 400 All Inputs ≤ 0.2V or Auto. - - 550 550 500 500 ≥ Vdd – 0.2V, Cycle Time ≥ tkc min. Isb Standby Current Device Deselected, Com. 200 200 200 200 200 200 mA TTL Input Vdd = Max., Ind. 220 220 220 220 220 220 All Inputs ≤ Vil or ≥ Vih, Auto. - - 300 300 300 300 ZZ ≤ Vil, f = Max. Isbi Standby Current Device Deselected, Com. 180 180 180 180 180 180 mA CMOS Input Vdd = Max., Ind. 200 200 200 200 200 200 Vin ≤ Vss + 0.2V or Auto. - - 280 280 280 280 ≥Vdd – 0.2V, f = 0 14 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  CAPACITANCE(1,2) Symbol Cin Cout Parameter Input Capacitance Input/Output Capacitance Conditions Vin = 0V Vout = 0V Max. 6 8 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V. 3.3V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 1.5 ns 1.5V See Figures 1 and 2 3.3V I/O OUTPUT LOAD EQUIVALENT 317 Ω +3.3V Zo= 50Ω OUTPUT OUTPUT 50Ω 5 pF Including jig and scope 351 Ω 1.5V Figure 1 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019 Figure 2 15   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  2.5V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 2.5V 1.5 ns 1.25V See Figures 3 and 4 2.5V I/O OUTPUT LOAD EQUIVALENT 1,667 Ω +2.5V ZO = 50Ω OUTPUT OUTPUT 50Ω 5 pF Including jig and scope 1,538 Ω 1.25V Figure 3 Figure 4 1.8V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 1.8V 1.5 ns 0.9V See Figures 5 and 6 1.8V I/O OUTPUT LOAD EQUIVALENT 1K Ω +1.8V ZO = 50Ω OUTPUT OUTPUT 50Ω 5 pF Including jig and scope 1K Ω 0.9V Figure 5 16 Figure 6 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  READ/WRITE CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Parameter Clock Frequency Cycle Time Clock High Time Clock Low Time 1.7 Clock Access Time Clock High to Output Invalid Clock High to Output Low-Z Clock High to Output High-Z Output Enable to Output Valid Output Enable to Output Low-Z -250 -200 -166 Min. Max. Min. Max. Min. Max. Unit — 250 — 200 — 166 MHz 4.0 — 5 — 6 — ns 1.7 — 2 — 2.4 — ns 1.7 — — 2.3 — ns — 2.8 — 3.1 — 3.8 ns 0.8 — 1.5 — 1.5 — ns 0.8 — 1 — 1.5 — ns — 2.8 — 3.1 3.8 ns — 2.8 — 3.1 3.8 ns 0 — 0 — 0 — ns Output Disable to Output High-Z Address Setup Time Read/Write Setup Time Chip Enable Setup Time Clock Enable Setup Time Address Advance Setup Time Data Setup Time Address Hold Time Clock Enable Hold Time Write Hold Time Chip Enable Hold Time Address Advance Hold Time Data Hold Time Vdd (typical) to First Access — 1.4 1.4 1.4 1.4 1.4 1.4 0.4 0.4 0.4 0.4 0.4 0.4 1   Symbol fmax tkc tkh tkl tkq (2) tkqx tkqlz(2,3) tkqhz(2,3) toeq toelz(2,3) toehz(2,3) tas tws tces tse tadvs tds tah the twh tceh tadvh tdh (4) tpower Notes: 2.8 — — — — — — — — — — — — — — 1.4 1.4 1.4 1.4 1.4 1.4 0.4 0.4 0.4 0.4 0.4 0.4 1 3.1 — — — — — — — — — — — — — 1.5 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 0.5 1 3.8 — — — — — — — — — — — — — ns ns ns ns ns ns ns ns ns ns ns ns ns ms 1.  Configuration signal MODE is static and must not change during normal operation. 2.  Guaranteed but not 100% tested. This parameter is periodically sampled. 3.  Tested with load in Figure 2. 4. tpower is the time that the power needs to be supplied above Vdd (min) initially before READ or WRITE operation can be initiated. Integrated Silicon Solution, Inc. — www.issi.com 17 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  SNOOZE MODE ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Temperature Range Isb2 Current during SNOOZE MODE ZZ ≥ Vdd - 0.2V Com. Ind. Auto. tpds ZZ active to input ignored tpus ZZ inactive to input sampled tzzi ZZ active to SNOOZE current trzzi ZZ inactive to exit SNOOZE current Min. Max. — — — — 2 — 0 Unit 120 mA 130 250 2 cycle — cycle 2 cycle — ns SLEEP MODE TIMING CLK tPDS ZZ setup cycle tPUS ZZ recovery cycle ZZ tZZI Isupply ISB2 tRZZI All Inputs (except ZZ) Deselect or Read Only Deselect or Read Only Normal operation cycle Outputs (Q) High-Z Don't Care 18 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  READ CYCLE TIMING tKH tKL CLK tKC tADVS tADVH ADV tAS tAH Address A1 A3 A2 tWS tWH WRITE tSE tHE CKE tCES tCEH CE OE tOEQ tOELZ Data Out Q1-1 tOEHZ tKQX Q2-1 tKQ Q2-2 tKQHZ Q2-3 NOTES: WRITE = L means WE = L and BWx = L WE = L and BWX = L CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L Q2-4 Q3-1 Q3-2 Q3-3 Q3-4 Don't Care Undefined Integrated Silicon Solution, Inc. — www.issi.com 19 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  WRITE CYCLE TIMING tKH tKL CLK tKC ADV Address A1 A3 A2 WRITE tSE tHE CKE CE OE tDS Data In D1-1 D2-1 D2-2 D2-3 D2-4 D3-1 tDH D3-2 D3-3 D3-4 tOEHZ Data Out Q0-3 Q0-4 NOTES: WRITE = L means WE = L and BWx = L WE = L and BWX = L CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L 20 Don't Care Undefined Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  SINGLE READ/WRITE CYCLE TIMING tKH tKL CLK tSE tHE tKC CKE Address A1 A2 A3 A4 Q1 Q3 A5 A6 A7 A8 A9 WRITE CE ADV OE tOEQ Data Out tOELZ Q4 Q6 Q7 tDS tDH Data In D2 NOTES: WRITE = L means WE = L and BWx = L CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L D5 Don't Care Undefined Integrated Silicon Solution, Inc. — www.issi.com 21 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  CKE OPERATION TIMING tKH tKL CLK tSE tHE tKC CKE Address A1 A2 A3 A4 A5 A6 WRITE CE ADV OE tKQ Data Out tKQLZ tKQHZ Q1 Q3 Q4 tDS tDH Data In D2 NOTES: WRITE = L means WE = L and BWx = L CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L 22 Don't Care Undefined Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  CE OPERATION TIMING tKH tKL CLK tSE tHE tKC CKE Address A1 A2 A3 A4 A5 WRITE CE ADV OE tOEQ Data Out tOELZ tKQHZ Q1 tKQ tKQLZ Q2 Q4 tDS tDH Data In D3 NOTES: WRITE = L means WE = L and BWx = L CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L D5 Don't Care Undefined Integrated Silicon Solution, Inc. — www.issi.com 23 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  IEEE 1149.1 Serial Boundary Scan (JTAG) Test Access Port (TAP) - Test Clock The serial boundary scan Test Access Port (TAP) is only available in the PBGA package. (Not available in TQFP package.) This port operates in accordance with IEEE Standard 1149.1-1900, but does not include all functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because they place added delay in the critical speed path of the SRAM. The TAP controller operates in a manner that does not conflict with the performance of other devices using 1149.1 fully compliant TAP. The test clock is only used with the TAP controller. All inputs are captured on the rising edge of TCK and outputs are driven from the falling edge of TCK. Disabling the JTAG Feature The TDI pin is used to serially input information to the registers and can be connected to the input of any register. The register between TDI and TDO is chosen by the instruction loaded into the TAP instruction register. For information on instruction register loading, see the TAP Controller State Diagram. TDI is internally pulled up and can be disconnected if the TAP is unused in an application. TDI is connected to the Most Significant Bit (MSB) on any register. The SRAM can operate without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (Vss) to prevent clocking of the device. TDI and TMS are internally pulled up and may be disconnected. They may alternately be connected to Vdd through a pull-up resistor. TDO should be left disconnected. On power-up, the device will start in a reset state which will not interfere with the device operation. Test Mode Select (TMS) The TMS input is used to send commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left disconnected if the TAP is not used. The pin is internally pulled up, resulting in a logic HIGH level. Test Data-In (TDI) tap controller block diagram 0 Bypass Register 2 1 0 Instruction Register TDI Selection Circuitry 31 30 29 . . . Selection Circuitry 2 1 0 2 1 0 TDO Identification Register x . . . . . Boundary Scan Register* TCK TMS 24 TAP CONTROLLER Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Test Data Out (TDO) The TDO output pin is used to serially clock data-out from the registers. The output is active depending on the current state of the TAP state machine (see TAP Controller State Diagram). The output changes on the falling edge of TCK and TDO is connected to the Least Significant Bit (LSB) of any register. Performing a TAP Reset A Reset is performed by forcing TMS HIGH (Vdd) for five rising edges of TCK. RESET may be performed while the SRAM is operating and does not affect its operation. At power-up, the TAP is internally reset to ensure that TDO comes up in a high-Z state. TAP Registers Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK and output on the TDO pin on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins. (See TAP Controller Block Diagram)  At power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as previously described. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain states. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This allows data to be shifted through the SRAM with minimal delay. The bypass reg- ister is set LOW (Vss) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all input and output pins on the SRAM. Several no connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The x36 configuration has a 75-bit-long register and the x18 configuration also has a 75-bit-long register. The boundary scan register is loaded with the contents of the RAM Input and Output ring when the TAP controller is in the Capture-DR state and then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE-Z instructions can be used to capture the contents of the Input and Output ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Scan Register Sizes Register Name Instruction Bypass ID Boundary Scan Bit Size Bit Size (x18) (x36) 3 3 1 1 32 32 75 75 Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded to the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has vendor code and other information described in the Identification Register Definitions table. Identification Register Definitions Instruction Field Description Revision Number  (31:28) Reserved for version number. Device Depth  (27:23) Defines depth of SRAM. 2M or 4M Device Width  (22:18) Defines width of the SRAM. x36 or x18 ISSI Device ID  (17:12) Reserved for future use. ISSI JEDEC ID  (11:1) Allows unique identification of SRAM vendor. ID Register Presence  (0) Indicate the presence of an ID register. Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019 2M x 36 xxxx 01010 00100 xxxxx 00001010101 1 4M x 18 xxxx 01011 00011 xxxxx 00001010101 1 25   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  TAP Instruction Set SAMPLE/PRELOAD Eight instructions are possible with the three-bit instruction register and all combinations are listed in the Instruction Code table. Three instructions are listed as RESERVED and should not be used and the other five instructions are described below. The TAP controller used in this SRAM is not fully compliant with the 1149.1 convention because some mandatory instructions are not fully implemented. The TAP controller cannot be used to load address, data or control signals and cannot preload the Input or Output buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/ PRELOAD; instead it performs a capture of the Inputs and Output ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted from the instruction register through the TDI and TDO pins. To execute an instruction once it is shifted in, the TAP controller must be moved into the Update-IR state. SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the TAP controller is not fully 1149.1 compliant. When the SAMPLE/PRELOAD instruction is loaded to the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. It is important to realize that the TAP controller clock operates at a frequency up to 10 MHz, while the SRAM clock runs more than an order of magnitude faster. Because of the clock frequency differences, it is possible that during the Capture-DR state, an input or output will under-go a transition. The TAP may attempt a signal capture while in transition (metastable state). The device will not be harmed, but there is no guarantee of the value that will be captured or repeatable results. To guarantee that the boundary scan register will capture the correct signal value, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture set-up plus hold times (tcs and tch). To insure that the SRAM clock input is captured correctly, designs need a way to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is not an issue, it is possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Note that since the PRELOAD part of the command is not implemented, putting the TAP into the Update to the UpdateDR state while performing a SAMPLE/PRELOAD instruction will have the same effect as the Pause-DR command. EXTEST EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. Because EXTEST is not implemented in the TAP controller, this device is not 1149.1 standard compliant. The TAP controller recognizes an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is a difference between the instructions, unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO pins and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE-Z The SAMPLE-Z instruction causes the boundary scan register to be connected between the TDI and TDO pins when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. 26 Bypass When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Instruction Codes Code Instruction Description 000 EXTEST Captures the Input/Output ring contents. Places the boundary scan register between the TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant. 001 IDCODE Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. 010 SAMPLE-Z Captures the Input/Output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. 011 RESERVED Do Not Use: This instruction is reserved for future use. 100 SAMPLE/PRELOAD Captures the Input/Output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. 101 RESERVED Do Not Use: This instruction is reserved for future use. 110 RESERVED Do Not Use: This instruction is reserved for future use. 111 BYPASS Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. TAP CONTROLLER STATE DIAGRAM Test Logic Reset 1 0 Run Test/Idle 1 Select DR 0 0 1 1 1 Capture DR 0 Shift DR 1 Exit1 DR 0 Select IR 0 1 Exit1 IR 0 Pause DR 0 1 0 1 Exit2 DR 1 Update DR 0 Capture IR 0 Shift IR 1 0 Pause IR 1 0 1 1 0 1 0 Exit2 IR 1 Update IR 0 Integrated Silicon Solution, Inc. — www.issi.com 27 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  TAP Electrical Characteristics (Vddq = 3.3V Operating Range) Symbol Voh1 Voh2 Vol1 Vol2 Vih Vil Ix Parameter Test Conditions Min. Max. Units Output HIGH Voltage Ioh = -4 mA 2.4 — V Output HIGH Voltage Ioh = -100 µA 2.9 — V Output LOW Voltage Iol = 8 mA — 0.4 V Output LOW Voltage Iol = 100 µA — 0.2 V Input HIGH Voltage 2.0 Vdd+0.3 V Input LOW Voltage –0.3 0.8 V Input Load Current Vss ≤ Vin ≤ Vddq –30 30 mA TAP Electrical Characteristics (Vddq = 2.5V Operating Range) Symbol Voh1 Voh2 Vol1 Vol2 Vih Vil Ix Parameter Output HIGH Voltage Test Conditions Ioh = -1 mA Min. Max. Units 2.0 — V Output HIGH Voltage Ioh = -100 µA 2.1 — Output LOW Voltage Iol = 1 mA — 0.4 Output LOW Voltage Iol = 100 µA — 0.2 Input HIGH Voltage 1.7 Vdd+0.3 Input LOW Voltage -0.3 0.7 Input Load Current Vss ≤ Vin ≤ Vddq –30 30 V V V V V mA TAP Electrical Characteristics (Vddq = 1.8V Operating Range) Symbol Voh1 Vol1 Vih Vil Ix 28 Parameter Test Conditions Min. Max. Units Output HIGH Voltage Ioh = -1 mA Vdd -0.4 — V Output LOW Voltage Iol = 1 mA — 0.5 V Input HIGH Voltage 1.3 Vdd +0.3 V Input LOW Voltage -0.3 0.7 V Input Load Current Vss ≤ V I ≤ Vddq -30 30 mA Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  TAP AC ELECTRICAL CHARACTERISTICS (Over Operating Range) Parameter Symbol Min Max Units TCK cycle time tTHTH 100 – ns TCK high pulse width tTHTL 40 – ns TCK low pulse width tTLTH 40 – ns TMS Setup tMVTH 10 – ns TMS Hold tTHMX 10 – ns TDI Setup tDVTH 10 – ns TDI Hold tTHDX 10 – ns TCK Low to Valid Data tTLOV – 20 ns TAP TEST CONDITIONS (1.8V/2.5V/3.3V) Input pulse levels Input rise and fall times Input timing reference levels Output reference levels Test load termination supply voltage Vtrig 0 to 1.8V/0 to 2.5V/0 to 3.0V 1.5ns 0.9V/1.25V/1.5V 0.9V/1.25V/1.5V 0.9V/1.25V/1.5V 0.9V/1.25V/1.5V TAP Output Load Equivalent 50Ω Vtrig TDO Z0 = 50Ω 20 pF GND Tap timing 1 2 tTHTH 3 4 5 6 tTLTH TCK tTHTL tMVTH tTHMX TMS tDVTH tTHDX TDI tTLOV TDO tTLOX DON'T CARE UNDEFINED Integrated Silicon Solution, Inc. — www.issi.com 29 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Boundary Scan Order Bit # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 X36 Bump ID N6 N7 N10 P11 P8 R8 R9 P9 P10 R10 R11 H11 N11 M11 L11 K11 J11 M10 L10 K10 J10 H9 H10 G11 F11 E11 D11 G10 F10 E10 D10 C11 A11 B11 A10 B10 A9 B9 C10 A8 B8 A7 B7 B6 165 BGA Signal NC NC NC NC A18 A17 A16 A15 A14 A13 A12 ZZ DQa0 DQa1 DQa2 DQa6 DQa7 DQa3 DQa4 DQa5 DQa8 NC NC DQb8 DQb7 DQb5 DQb4 DQb6 DQb3 DQb2 DQb1 DQb0 NC NC A11 A10 A9 A8 NC ADV /OE /CKE /WE CLK X18 Bump ID Signal N6 NC N7 NC N10 NC P11 NC P8 A18 R8 A17 R9 A16 P9 A15 P10 A14 R10 A13 R11 A12 H11 ZZ N11 NC M11 NC L11 NC K11 NC J11 NC M10 DQa8 L10 DQa7 K10 DQa6 J10 DQa5 H9 NC H10 NC G11 DQa4 F11 DQa3 E11 DQa2 D11 DQa1 G10 NC F10 NC E10 NC D10 NC C11 DQa0 A11 A21 B11 NC A10 A11 B10 A10 A9 A9 B9 A8 C10 NC A8 ADV B8 /OE A7 /CKE B7 /WE B6 CLK 119 BGA Bit # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 X36 Bump ID Signal NC C7 NC R5 NC R7 NC U6 A18 B5 A17 C6 A16 T3 A15 T4 A14 T5 A13 T6 A12 R6 ZZ T7 DQa0 P6 DQa1 N7 DQa2 M6 DQa6 L7 DQa7 K6 DQa3 P7 DQa4 N6 DQa5 L6 DQa8 K7 NC NC DQb8 H6 DQb7 G7 DQb5 F6 DQb4 E7 DQb6 H7 DQb3 G6 DQb2 E6 DQb1 D7 DQb0 D6 NC T1 NC R1 A11 A6 A10 A5 A9 G4 A8 A4 B7 NC ADV B4 /OE F4 /CKE M4 /WE H4 CLK K4 X18 Bump ID Signal NC C7 NC R5 NC R7 NC U6 A18 B5 A17 C6 A16 T3 A15 T4 A14 T5 A13 T6 A12 R6 ZZ T7 NC P6 NC N7 NC M6 NC L7 NC K6 DQa8 P7 DQa7 N6 DQa6 L6 DQa5 K7 NC NC DQa4 H6 DQa3 G7 DQa2 F6 DQa1 E7 NC H7 NC G6 NC E6 NC D7 DQa0 D6 A21 T1 NC R1 A11 A6 A10 A5 A9 G4 A8 A4 B7 NC ADV B4 /OE F4 /CKE M4 /WE H4 CLK K4 Continued on next page 30 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Bit # 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 X36 Bump ID A6 B5 A5 A4 B4 B3 A3 A2 B2 C2 B1 A1 C1 D1 E1 F1 G1 D2 E2 F2 G2 H1 H2 H3 J1 K1 L1 M1 J2 K2 L2 M2 N1 N2 P1 R1 R2 P3 R3 P2 R4 P4 N5 P6 R6 * 165 BGA Signal /CE2 /Bwa /Bwb /Bwc /Bwd CE2 /CE1 A7 A6 NC NC NC DQc0 DQc1 DQc2 DQc6 DQc7 DQc3 DQc4 DQc5 DQc8 NC NC NC DQd8 DQd7 DQd5 DQd4 DQd6 DQd3 DQd2 DQd1 DQd0 NC NC MODE A4 A3 A2 A5 A19 A20 NC A1 A0 Int X18 Bump ID Signal A6 /CE2 B5 /Bwa A5 NC A4 /Bwb B4 NC B3 CE2 A3 /CE1 A2 A7 B2 A6 C2 NC B1 NC A1 NC C1 NC D1 NC E1 NC F1 NC G1 NC D2 DQb8 E2 DQb7 F2 DQb6 G2 DQb5 H1 NC H2 NC H3 NC J1 DQb4 K1 DQb3 L1 DQb2 M1 DQb1 J2 NC K2 NC L2 NC M2 NC N1 DQb0 N2 NC P1 NC R1 MODE R2 A4 P3 A3 R3 A2 P2 A5 R4 A19 P4 A20 N5 NC P6 A1 R6 A0 * Int Bit # 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 119 BGA X36 X18 Bump ID Signal Bump ID Signal B6 B6 /CE2 /CE2 L5 L5 /Bwa /Bwa G5 G5 /Bwb NC G3 G3 /Bwc /Bwb L3 L3 /Bwd NC B2 B2 CE2 CE2 E4 E4 /CE1 /CE1 A3 A3 A7 A7 A2 A2 A6 A6 B1 B1 NC NC C1 C1 NC NC D4 D4 NC NC D2 D2 DQc0 NC E1 E1 DQc1 NC F2 F2 DQc2 NC G1 G1 DQc6 NC H2 H2 DQc7 NC D1 D1 DQc3 DQb8 E2 E2 DQc4 DQb7 G2 G2 DQc5 DQb6 H1 H1 DQc8 DQb5 NC NC NC NC NC NC K2 K2 DQd8 DQb4 L1 L1 DQd7 DQb3 M2 M2 DQd5 DQb2 N1 N1 DQd4 DQb1 K1 K1 DQd6 NC L2 L2 DQd3 NC N2 N2 DQd2 NC P1 P1 DQd1 NC P2 P2 DQd0 DQb0 L4 L4 NC NC J5 J5 NC NC R3 MODE MODE R3 A4 A4 C2 C2 A3 A3 B3 B3 A2 A2 C3 C3 A5 A5 R2 R2 A19 A19 C5 C5 T2 A20 A20 T2 NC NC J3 J3 N4 A1 A1 N4 P4 A0 A0 P4 * Int Int * Integrated Silicon Solution, Inc. — www.issi.com 31 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  ORDERING INFORMATION Commercial Range: 0°C to 70°C (VDD = 3.3V / VDDQ = 2.5V/3.3V) Speed 250MHz 200MHz 166MHz x36 x18 Package IS61NLP204836B-250B3 IS61NLP409618B-250B3 165 PBGA,13x15mm IS61NLP204836B-250M3 IS61NLP409618B-250M3 165 PBGA,15x17mm IS61NLP204836B-250B2 IS61NLP409618B-250B2 119 PBGA IS61NLP204836B-250TQL IS61NLP409618B-250TQL 100 TQFP, Lead-free IS61NLP204836B-250B3L IS61NLP409618B-250B3L 165 PBGA,13x15mm, Lead-free IS61NLP204836B-250M3L IS61NLP409618B-250M3L 165 PBGA,15x17mm, Lead-free IS61NLP204836B-250B2L IS61NLP409618B-250B2L 119 PBGA, Lead-free IS61NLP204836B-200B3 IS61NLP409618B-200B3 165 PBGA,13x15mm IS61NLP204836B-200M3 IS61NLP409618B-200M3 165 PBGA,15x17mm IS61NLP204836B-200B2 IS61NLP409618B-200B2 119 PBGA IS61NLP204836B-200TQL IS61NLP409618B-200TQL 100 TQFP, Lead-free IS61NLP204836B-200B3L IS61NLP409618B-200B3L 165 PBGA,13x15mm, Lead-free IS61NLP204836B-200M3L IS61NLP409618B-200M3L 165 PBGA,15x17mm, Lead-free IS61NLP204836B-200B2L IS61NLP409618B-200B2L 119 PBGA, Lead-free IS61NLP204836B-166B3 IS61NLP409618B-166B3 165 PBGA,13x15mm IS61NLP204836B-166M3 IS61NLP409618B-166M3 165 PBGA,15x17mm IS61NLP204836B-166B2 IS61NLP409618B-166B2 119 PBGA IS61NLP204836B-166TQL IS61NLP409618B-166TQL 100 TQFP, Lead-free IS61NLP204836B-166B3L IS61NLP409618B-166B3L 165 PBGA,13x15mm, Lead-free IS61NLP204836B-166M3L IS61NLP409618B-166M3L 165 PBGA,15x17mm, Lead-free IS61NLP204836B-166B2L IS61NLP409618B-166B2L 119 PBGA, Lead-free Commercial Range: 0°C to 70°C (VDD = 2.5V / VDDQ = 2.5V) Speed 250MHz 32 x36 x18 Package IS61NVP204836B-250B3 IS61NVP409618B-250B3 165 PBGA,13x15mm IS61NVP204836B-250M3 IS61NVP409618B-250M3 165 PBGA,15x17mm IS61NVP204836B-250B2 IS61NVP409618B-250B2 119 PBGA IS61NVP204836B-250TQL IS61NVP409618B-250TQL 100 TQFP, Lead-free IS61NVP204836B-250B3L IS61NVP409618B-250B3L 165 PBGA,13x15mm, Lead-free IS61NVP204836B-250M3L IS61NVP409618B-250M3L 165 PBGA,15x17mm, Lead-free IS61NVP204836B-250B2L IS61NVP409618B-250B2L 119 PBGA, Lead-free Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Speed 200MHz 166MHz x36 x18 Package IS61NVP204836B-200B3 IS61NVP409618B-200B3 165 PBGA,13x15mm IS61NVP204836B-200M3 IS61NVP409618B-200M3 165 PBGA,15x17mm IS61NVP204836B-200B2 IS61NVP409618B-200B2 119 PBGA IS61NVP204836B-200TQL IS61NVP409618B-200TQL 100 TQFP, Lead-free IS61NVP204836B-200B3L IS61NVP409618B-200B3L 165 PBGA,13x15mm, Lead-free IS61NVP204836B-200M3L IS61NVP409618B-200M3L 165 PBGA,15x17mm, Lead-free IS61NVP204836B-200B2L IS61NVP409618B-200B2L 119 PBGA, Lead-free IS61NVP204836B-166B3 IS61NVP409618B-166B3 165 PBGA,13x15mm IS61NVP204836B-166M3 IS61NVP409618B-166M3 165 PBGA,15x17mm IS61NVP204836B-166B2 IS61NVP409618B-166B2 119 PBGA IS61NVP204836B-166TQL IS61NVP409618B-166TQL 100 TQFP, Lead-free IS61NVP204836B-166B3L IS61NVP409618B-166B3L 165 PBGA,13x15mm, Lead-free IS61NVP204836B-166M3L IS61NVP409618B-166M3L 165 PBGA,15x17mm, Lead-free IS61NVP204836B-166B2L IS61NVP409618B-166B2L 119 PBGA, Lead-free Commercial Range: 0°C to 70°C (VDD = 1.8V / VDDQ = 1.8V) Speed x36 200MHz Please contact ISSI (SRAM@issi.com) 166MHz x18 Package IS61NVVP204836B-166B3 IS61NVVP409618B-166B3 165 PBGA,13x15mm IS61NVVP204836B-166M3 IS61NVVP409618B-166M3 165 PBGA,15x17mm IS61NVVP204836B-166B2 IS61NVVP409618B-166B2 119 PBGA IS61NVVP204836B-166TQL IS61NVVP409618B-166TQL 100 TQFP, Lead-free IS61NVVP204836B-166B3L IS61NVVP409618B-166B3L 165 PBGA,13x15mm, Lead-free IS61NVVP204836B-166M3L IS61NVVP409618B-166M3L 165 PBGA,15x17mm, Lead-free IS61NVVP204836B-166B2L IS61NVVP409618B-166B2L 119 PBGA, Lead-free Integrated Silicon Solution, Inc. — www.issi.com 33 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Industrial Range: -40°C to +85°C(VDD = 3.3V / VDDQ = 2.5V/3.3V) Speed 250MHz 200MHz 166MHz x36 x18 Package IS61NLP204836B-250B3I IS61NLP409618B-250B3I 165 PBGA,13x15mm IS61NLP204836B-250M3I IS61NLP409618B-250M3I 165 PBGA,15x17mm IS61NLP204836B-250B2I IS61NLP409618B-250B2I 119 PBGA IS61NLP204836B-250TQLI IS61NLP409618B-250TQLI 100 TQFP, Lead-free IS61NLP204836B-250B3LI IS61NLP409618B-250B3LI 165 PBGA,13x15mm, Lead-free IS61NLP204836B-250M3LI IS61NLP409618B-250M3LI 165 PBGA,15x17mm, Lead-free IS61NLP204836B-250B2LI IS61NLP409618B-250B2LI 119 PBGA, Lead-free IS61NLP204836B-200B3I IS61NLP409618B-200B3I 165 PBGA,13x15mm IS61NLP204836B-200M3I IS61NLP409618B-200M3I 165 PBGA,15x17mm IS61NLP204836B-200B2I IS61NLP409618B-200B2I 119 PBGA IS61NLP204836B-200TQLI IS61NLP409618B-200TQLI 100 TQFP, Lead-free IS61NLP204836B-200B3LI IS61NLP409618B-200B3LI 165 PBGA,13x15mm, Lead-free IS61NLP204836B-200M3LI IS61NLP409618B-200M3LI 165 PBGA,15x17mm, Lead-free IS61NLP204836B-200B2LI IS61NLP409618B-200B2LI 119 PBGA, Lead-free IS61NLP204836B-166B3I IS61NLP409618B-166B3I 165 PBGA,13x15mm IS61NLP204836B-166M3I IS61NLP409618B-166M3I 165 PBGA,15x17mm IS61NLP204836B-166B2I IS61NLP409618B-166B2I 119 PBGA IS61NLP204836B-166TQLI IS61NLP409618B-166TQLI 100 TQFP, Lead-free IS61NLP204836B-166B3LI IS61NLP409618B-166B3LI 165 PBGA,13x15mm, Lead-free IS61NLP204836B-166M3LI IS61NLP409618B-166M3LI 165 PBGA,15x17mm, Lead-free IS61NLP204836B-166B2LI IS61NLP409618B-166B2LI 119 PBGA, Lead-free Industrial Range: -40°C to +85°C(VDD = 2.5V / VDDQ = 2.5V) Speed 250MHz 34 x36 x18 Package IS61NVP204836B-250B3I IS61NVP409618B-250B3I 165 PBGA,13x15mm IS61NVP204836B-250M3I IS61NVP409618B-250M3I 165 PBGA,15x17mm IS61NVP204836B-250B2I IS61NVP409618B-250B2I 119 PBGA IS61NVP204836B-250TQLI IS61NVP409618B-250TQLI 100 TQFP, Lead-free IS61NVP204836B-250B3LI IS61NVP409618B-250B3LI 165 PBGA,13x15mm, Lead-free IS61NVP204836B-250M3LI IS61NVP409618B-250M3LI 165 PBGA,15x17mm, Lead-free IS61NVP204836B-250B2LI IS61NVP409618B-250B2LI 119 PBGA, Lead-free Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Speed 200MHz 166MHz x36 x18 Package IS61NVP204836B-200B3I IS61NVP409618B-200B3I 165 PBGA,13x15mm IS61NVP204836B-200M3I IS61NVP409618B-200M3I 165 PBGA,15x17mm IS61NVP204836B-200B2I IS61NVP409618B-200B2I 119 PBGA IS61NVP204836B-200TQLI IS61NVP409618B-200TQLI 100 TQFP, Lead-free IS61NVP204836B-200B3LI IS61NVP409618B-200B3LI 165 PBGA,13x15mm, Lead-free IS61NVP204836B-200M3LI IS61NVP409618B-200M3LI 165 PBGA,15x17mm, Lead-free IS61NVP204836B-200B2LI IS61NVP409618B-200B2LI 119 PBGA, Lead-free IS61NVP204836B-166B3I IS61NVP409618B-166B3I 165 PBGA,13x15mm IS61NVP204836B-166M3I IS61NVP409618B-166M3I 165 PBGA,15x17mm IS61NVP204836B-166B2I IS61NVP409618B-166B2I 119 PBGA IS61NVP204836B-166TQLI IS61NVP409618B-166TQLI 100 TQFP, Lead-free IS61NVP204836B-166B3LI IS61NVP409618B-166B3LI 165 PBGA,13x15mm, Lead-free IS61NVP204836B-166M3LI IS61NVP409618B-166M3LI 165 PBGA,15x17mm, Lead-free IS61NVP204836B-166B2LI IS61NVP409618B-166B2LI 119 PBGA, Lead-free Industrial Range: -40°C to +85°C(VDD = 1.8V / VDDQ = 1.8V) Speed 200MHz 166MHz x36 x18 Package Contact: SRAM@issi.com IS61NVVP409618B-200B3LI 165 PBGA,13x15mm, Lead-free IS61NVVP409618B-200TQLI 100 TQFP, Lead-free IS61NVVP204836B-166B3I IS61NVVP409618B-166B3I 165 PBGA,13x15mm IS61NVVP204836B-166M3I IS61NVVP409618B-166M3I 165 PBGA,15x17mm IS61NVVP204836B-166B2I IS61NVVP409618B-166B2I 119 PBGA IS61NVVP204836B-166TQLI IS61NVVP409618B-166TQLI 100 TQFP, Lead-free IS61NVVP204836B-166B3LI IS61NVVP409618B-166B3LI 165 PBGA,13x15mm, Lead-free IS61NVVP204836B-166M3LI IS61NVVP409618B-166M3LI 165 PBGA,15x17mm, Lead-free IS61NVVP204836B-166B2LI IS61NVVP409618B-166B2LI 119 PBGA, Lead-free Automotive(A3) Range: -40°C to +125°C(VDD = 3.3V / VDDQ = 2.5V/3.3V) Speed x36 x18 Package Please contact ISSI (SRAM@issi.com) Automotive(A3) Range: -40°C to +125°C(VDD = 2.5V / VDDQ = 2.5V) Speed x36 x18 Package Please contact ISSI (SRAM@issi.com) Automotive(A3) Range: -40°C to +125°C(VDD = 1.8V / VDDQ = 1.8V) Speed x36 x18 Package Please contact ISSI (SRAM@issi.com) Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019 35   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  36 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Integrated Silicon Solution, Inc. — www.issi.com 37 Rev. B3 07/19/2019   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  38 Integrated Silicon Solution, Inc. — www.issi.com Rev. B3 07/19/2019 Package Outline 1. Controlling dimension : mm NOTE : 12/10/2007   IS61NLP204836B/IS61NVP/NVVP204836B IS61NLP409618B/IS61NVP/NVVP409618B  Integrated Silicon Solution, Inc. — www.issi.com 39 Rev. B3 07/19/2019