IS61WV20488ALL

IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL 2M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – VDD 1.65V to 2.2V (IS61WV20488ALL) speed = 20ns for Vcc = 1.65V to 2.2V – VDD 2.4V to 3.6V (IS61/64WV20488BLL) speed = 10ns for Vcc = 2.4V to 3.6V speed = 8ns for Vcc = 3.3V + 5% • Packages available: – 48-ball miniBGA (9mm x 11mm) – 44-pin TSOP (Type II) • Industrial and Automotive Temperature Support • Lead-free available ISSI DESCRIPTION ® PRELIMINARY INFORMATION JANUARY 2006 The ISSI IS61WV20488ALL/BLL and IS64WV20488BLL are very high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS61WV20488ALL/BLL and IS64WV20488BLL are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61WV20488ALL/BLL and IS64WV20488BLL operate from a single power supply and all inputs are TTL-compatible. The IS61WV20488ALL/BLL and IS64WV20488BLL are available in 48 ball mini BGA and 44-pin TSOP (Type II) packages. FUNCTIONAL BLOCK DIAGRAM A0-A20 DECODER 2M X 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE OE WE Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. CONTROL CIRCUIT Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 1 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL PIN CONFIGURATION 48-pin Mini BGA (M ) (9mm x 11mm) 1 2 3 4 5 6 NC NC A0 A1 A2 A3 A4 CE I/O0 I/O1 VDD GND I/O2 I/O3 WE A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 ISSI 44-pin TSOP (Type II ) ® A B C D E F G H NC NC NC GND VDD NC NC A18 OE NC NC NC NC NC A19 A8 A0 A3 A5 A17 NC A14 A12 A9 A1 A4 A6 A7 A16 A15 A13 A10 A2 CE NC I/O0 I/O2 VDD GND I/O6 I/O7 A20 I/O1 I/O3 I/O4 I/O5 WE A11 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC NC A20 A18 A17 A16 A15 OE I/O7 I/O6 GND VDD I/O5 I/O4 A14 A13 A12 A11 A10 A19 NC NC PIN DESCRIPTIONS A0-A20 CE OE WE I/O0-I/O7 VDD GND NC Address Inputs Chip Enable Input Output Enable Input Write Enable Input Data Input / Output Power Ground No Connection 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL TRUTH TABLE Mode WE X H H L CE H L L L OE X H L X I/O Operation High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ICC ICC ICC Not Selected (Power-down) Output Disabled Read Write ISSI ® ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM VDD TSTG PT Parameter Terminal Voltage with Respect to GND VDD Relates to GND Storage Temperature Power Dissipation Value –0.5 to VDD + 0.5 –0.3 to 4.0 –65 to +150 1.0 Unit V V °C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol CIN CI/O Parameter Input Capacitance Input/Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 3 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL OPERATING RANGE (VDD) (IS61WV20488ALL) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C VDD (20 nS) 1.65V-2.2V 1.65V-2.2V 1.65V-2.2V ISSI ® OPERATING RANGE (VDD) (IS61WV20488BLL)(1) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C VDD (8 nS) 3.3V + 5% 3.3V + 5% VDD (10 nS) 2.4V-3.6V 2.4V-3.6V Note: 1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of 3.3V + 5%, the device meets 8ns. OPERATING RANGE (VDD) (IS64WV20488BLL) Range Automotive Ambient Temperature –40°C to +125°C VDD (10 nS) 2.4V-3.6V 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 3.3V + 5% Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND ≤ VIN ≤ VDD GND ≤ VOUT ≤ VDD, Outputs Disabled Test Conditions VDD = Min., IOH = –4.0 mA VDD = Min., IOL = 8.0 mA Min. 2.4 — 2 –0.3 –1 –1 ISSI Max. — 0.4 VDD + 0.3 0.8 1 1 Unit V V V V µA µA ® Note: 1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 2.4V-3.6V Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND ≤ VIN ≤ VDD GND ≤ VOUT ≤ VDD, Outputs Disabled Test Conditions VDD = Min., IOH = –1.0 mA VDD = Min., IOL = 1.0 mA Min. 1.8 — 2.0 –0.3 –1 –1 Max. — 0.4 VDD + 0.3 0.8 1 1 Unit V V V V µA µA Note: 1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 1.65V-2.2V Symbol VOH VOL VIH VIL(1) ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage GND ≤ VIN ≤ VDD GND ≤ VOUT ≤ VDD, Outputs Disabled Test Conditions IOH = -0.1 mA IOL = 0.1 mA VDD 1.65-2.2V 1.65-2.2V 1.65-2.2V 1.65-2.2V Min. 1.4 — 1.4 –0.2 –1 –1 Max. — 0.2 VDD + 0.2 0.4 1 1 Unit V V V V µA µA Note: 1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 5 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL ISSI Unit (2.4V-3.6V) 0.4V to VDD-0.3V 1.5ns VDD/2 See Figures 1 and 2 Unit (3.3V + 5%) 0.4V to VDD-0.3V 1.5ns VDD/2 + 0.05 See Figures 1 and 2 Unit (1.65V-2.2V) 0.4V to VDD-0.2V 1.5ns VDD/2 See Figures 1 and 2 ® AC TEST CONDITIONS (HIGH SPEED) Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (VRef) Output Load AC TEST LOADS 319 Ω ZO = 50Ω OUTPUT 50Ω 1.5V 30 pF Including jig and scope 3.3V OUTPUT 5 pF Including jig and scope 353 Ω Figure 1. Figure 2. 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL ISSI -8 Test Conditions VDD = Max., IOUT = 0 mA, f = fMAX Com. Ind. Auto. typ.(2) Com. Ind. Auto. Com. Ind. Auto. Com. Ind. Auto. typ.(2) Min. — — — — — — — — — — — — Max. 120 125 — 35 35 — 30 35 — 20 25 — -10 Min. Max. — — — 60 — — — — — — — — — 4 30 40 60 30 35 70 20 25 70 — — — — — — — — — 30 40 70 30 35 70 15 20 70 mA 95 100 140 -20 Min. Max. — — — 90 100 140 Unit mA ® POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC VDD Dynamic Operating Supply Current ICC1 Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) VDD = Max., IOUT = 0 mA, f = 0 VDD = Max., VIN = VIH or VIL CE ≥ VIH, f = 0 VDD = Max., CE ≥ VDD – 0.2V, VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 ISB1 mA ISB2 mA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 7 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) -8 Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time OE to High-Z Output OE to Low-Z Output CE to High-Z Output CE to Low-Z Output Power Up Time Power Down Time Min. 8 — 2 — — — 0 0 3 0 — Max. — 8 — 8 5.5 3 — 3 — — 8 -10 Min. Max. 10 — 2 — — — 0 0 3 0 — — 10 — 10 6.5 4 — 4 — — 10 Unit ns ns ns ns ns ns ns ns ns ns ns ISSI ® tRC tAA tOHA tACE tDOE tHZOE(2) tLZOE(2) tHZCE(2 tLZCE(2) tPU tPD Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. 8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL ISSI -20 ns Min. Max. 20 — 2.5 — — 0 0 0 3 0 — — 20 — 20 8 8 — 8 — — 20 Unit ns ns ns ns ns ns ns ns ns ns ns ® READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time OE to High-Z Output OE to Low-Z Output CE to High-Z Output CE to Low-Z Output Power Up Time Power Down Time (2) tRC tAA tOHA tACE tDOE tHZOE(2) tLZOE tHZCE tLZCE tPU tPD (2 (2) Notes: 1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to VDD-0.3V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 9 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL) ISSI t RC ® ADDRESS t AA t OHA DOUT PREVIOUS DATA VALID t OHA DATA VALID READ1.eps READ CYCLE NO. 2(1,3) (CE and OE Controlled) t RC ADDRESS t AA OE t OHA t DOE CE t HZOE t LZOE t ACE t LZCE t HZCE DATA VALID CE_RD2.eps DOUT HIGH-Z Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. 10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range) -8 Symbol Parameter Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time WE Pulse Width (OE = HIGH) WE Pulse Width (OE = LOW) Data Setup to Write End Data Hold from Write End (2) ISSI -10 Max. — — — — — — — — — 3.5 — Min. 10 8 8 0 0 8 10 6 0 — 2 Max. — — — — — — — — — 5 — Unit ns ns ns ns ns ns ns ns ns ns ns Min. 8 6.5 6.5 0 0 6.5 8.0 5 0 — 2 ® tWC tSCE tAW tHA tSA tPWE1 tPWE2 tSD tHD tHZWE tLZWE (2) WE LOW to High-Z Output WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. Shaded area product in development Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 11 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) Symbol Parameter Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time WE Pulse Width (OE = HIGH) WE Pulse Width (OE = LOW) Data Setup to Write End Data Hold from Write End (3) ISSI -20 ns Min. Max. 20 12 12 0 0 12 17 9 0 — 3 — — — — — — — — — 9 — Unit ns ns ns ns ns ns ns ns ns ns ns ® tWC tSCE tAW tHA tSA tPWE1 tPWE2 tSD tHD tHZWE tLZWE(3) WE LOW to High-Z Output WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to VDD-0.3V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL AC WAVEFORMS WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW) ISSI t WC ® ADDRESS VALID ADDRESS t SA CE t SCE t AW t PWE1 t PWE2 t HZWE t HA WE t LZWE HIGH-Z DOUT DATA UNDEFINED t SD DIN t HD DATAIN VALID CE_WR1.eps Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 13 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL AC WAVEFORMS WRITE CYCLE NO. 2(1,2) (WE Controlled: OE is HIGH During Write Cycle) ISSI ® t WC ADDRESS VALID ADDRESS t HA OE CE LOW t AW WE t PWE1 t SA t HZWE DATA UNDEFINED HIGH-Z t LZWE DOUT t SD DIN t HD DATAIN VALID CE_WR2.eps Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE > VIH. 14 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL AC WAVEFORMS WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) ISSI ® t WC ADDRESS OE CE VALID ADDRESS LOW t HA LOW t AW WE t PWE2 t SA t HZWE HIGH-Z t LZWE DOUT DATA UNDEFINED t SD DIN t HD DATAIN VALID CE_WR3.eps Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 15 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter VDD for Data Retention Data Retention Current Test Condition See Data Retention Waveform VDD = 1.2V, CE ≥ VDD – 0.2V Ind. Auto. typ.(1) Min. 1.2 — — 0 Max. 3.6 25 60 3 — — ISSI Unit V mA ® VDR IDR tSDR tRDR Data Retention Setup Time Recovery Time See Data Retention Waveform See Data Retention Waveform ns ns tRC Note: 1. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested. DATA RETENTION WAVEFORM (CE Controlled) tSDR VDD 1.65V Data Retention Mode tRDR 1.4V VDR CE ≥ VDD - 0.2V CE GND 16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL ORDERING INFORMATION Industrial Range: -40°C to +85°C Voltage Range: 2.4V to 3.6V Speed (ns) 10 (8 ) 1 ISSI ® Order Part No. IS61WV20488BLL-10MI IS61WV20488BLL-10MLI IS61WV20488BLL-10TI IS61WV20488BLL-10TLI Package 48 mini BGA (9mm x 11mm) 48 mini BGA (9mm x 11mm), Lead-free TSOP (Type II) TSOP (Type II), Lead-free Note: 1. Speed = 8ns for VDD = 3.3V + 5%. Speed = 10ns for VDD = 2.4V to 3.3V. Industrial Range: -40°C to +85°C Voltage Range: 1.65V to 2.2V Speed (ns) 20 Order Part No. IS61WV20488ALL-20MI IS61WV20488ALL-20TI Package 48 mini BGA (9mm x 11mm) TSOP (Type II) Automotive Range: -40°C to +125°C Voltage Range: 2.4V to 3.6V Speed (ns) 10 Order Part No. Package IS64WV20488BLL-10MA3 48 mini BGA (9mm x 11mm) IS64WV20488BLL-10TA3 TSOP (Type II) Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00C 01/09/06 17 PACKAGING INFORMATION Mini Ball Grid Array Package Code: M (48-pin) ISSI Bottom View φ b (48x) ® Top View 1 2 3 4 56 6 5 4 3 2 1 A B C D D E F G H D1 e A B C D E F G H e E E1 A2 SEATING PLANE A1 A Notes: 1. Controlling dimensions are in millimeters. Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 01/15/03 PACKAGING INFORMATION Mini Ball Grid Array Package Code: M (48-pin) ISSI ® mBGA - 6mm x 8mm MILLIMETERS Sym. N0. Leads A A1 A2 D D1 E E1 e b — 0.25 0.60 INCHES Min. Typ. Max. Min. Typ. Max. 48 — — — 5.60BSC 5.90 6.00 6.10 4.00BSC 0.80BSC 0.40 0.45 0.50 1.20 0.40 — .— 0.010 0.024 — 0.047 — 0.016 — — 7.90 8.00 8.10 0.311 0.314 0.319 0.220BSC 0.232 0.236 0.240 0.157BSC 0.031BSC 0.016 0.018 0.020 mBGA - 7.2mm x 8.7mm MILLIMETERS Sym. N0. Leads A A1 A2 D D1 E E1 e b — 0 .24 0.60 mBGA - 9mm x 11mm INCHES Min. Typ. Max. Sym. N0. Leads MILLIMETERS Min. Typ. Max. 48 — 0.24 0.60 — — — 5.25BSC 8.90 9.00 9.10 3.75BSC 0.75BSC 0.30 0.35 0.40 1.20 0.30 — — INCHES Min. Typ. Max. Min. Typ. Max. 48 — — — 5.25BSC 7.10 7.20 7.30 3.75BSC 0.75BSC 0.30 0.35 0.40 1.20 0.30 — — 0.009 0.024 — — — 0.047 0.012 — A A1 A2 D D1 E E1 e b — — — 0.047 0.012 — 0.009 0.024 8.60 8.70 8.80 0.339 0.343 0.346 0.207BSC 0.280 0.283 0.287 0.148BSC 0.030BSC 0.012 0.014 0.016 10.90 11.00 11.10 0.429 0.433 0.437 0.207BSC 0.350 0.354 0.358 0.148BSC 0.030BSC 0.012 0.014 0.016 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 01/15/03 PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II) ISSI Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. ® N N/2+1 E1 E 1 D N/2 SEATING PLANE ZD A . e b L A1 α C Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD α Millimeters Min Max Inches Min Max Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0° 5° 0° 5° Millimeters Min Max 50 — 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0° 5° Inches Min Max (N) 32 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0° 5° 0° 5° — 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0° 5° Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 06/18/03