IS62C1024-35Q

IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW (typical) • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply ISSI ® JANUARY 2000 DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C1024 is available in 32-pin 525-mil plastic SOP and TSOP (type 1) packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 512 X 2048 MEMORY ARRAY VCC GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 1 IS62C1024 PIN CONFIGURATION 32-Pin SOP 32-Pin TSOP (Type 1) ISSI 32 31 30 29 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 ® NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 ISSI 28 62C1024 27 26 25 24 23 22 21 20 19 18 17 PIN DESCRIPTIONS A0-A16 CE1 CE2 OE WE I/O0-I/O7 Vcc GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground OPERATING RANGE Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VCC 5V ± 10% 5V ± 10% 2 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 IS62C1024 TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB1, ISB2 ISB1, ISB2 I CC I CC I CC ISSI ® ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +7.0 –10 to +85 –65 to +150 1.5 20 Unit V °C °C W mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions VCC = Min., IOH = –1.0 mA VCC = Min., IOL = 2.1 mA Min. 2.4 — 2.2 –0.3 –5 –10 –5 –10 Max. — 0.4 VCC + 0.5 0.8 5 10 5 10 Unit V V V V µA µA GND ≤ VIN ≤ VCC GND ≤ VOUT ≤ VCC Com. Ind. Com. Ind. Notes: 1. VIL = –3.0V for pulse width less than 10 ns. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 3 IS62C1024 POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB1 Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX Com. Ind. -35 Min. Max. — — — — — — 150 160 40 60 30 40 -45 Min. Max. — — — — — — 135 145 40 60 30 40 -55 Min. Max. — — — — — — 120 130 40 60 30 40 ISSI -70 Min. Max. — — — — — — 90 100 40 60 30 40 mA mA ® Unit VCC = Max., Com. VIN = VIH or VIL, CE1 ≥ VIH, Ind. or CE2 ≤ VIL, f = 0 VCC = Max., Com. CE1 ≤ VCC – 0.2V, Ind. CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V, or VIN ≤ 0.2V, f = 0 ISB2 mA Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 5 ns 1.5V See Figures 1a and 1b AC TEST LOADS 480 Ω 5V 480 Ω 5V OUTPUT 100 pF Including jig and scope 255 Ω OUTPUT 5 pF Including jig and scope 255 Ω Figure 1a. Figure 1b. 4 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 IS62C1024 READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE1 Access Time CE2 Access Time OE Access Time OE to Low-Z Output OE to High-Z Output CE1 to Low-Z Output CE2 to Low-Z Output CE1 or CE2 to High-Z Output -35 Min. Max. 35 — 3 — — — 0 0 3 3 0 — 35 — 35 35 10 — 10 — — 10 -45 Min. Max. 45 — 3 — — — 0 0 5 5 0 — 45 — 45 45 20 — 15 — — 15 -55 Min. Max. 55 — 3 — — — 0 0 7 7 0 — 55 — 55 55 25 — 20 — — 20 ISSI -70 Min. Max. 70 — 3 — — — 0 0 10 10 0 — 70 — 70 70 35 — 25 — — 25 ns ns ns ns ns ns ns ns ns ns ns ® Unit tRC tAA tOHA tACE1 tACE2 tDOE tLZOE (2) (2) tHZOE tLZCE1(2) tLZCE2(2) tHZCE (2) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS READ CYCLE NO. 1(1,2) tRC ADDRESS tAA tOHA tOHA DATA VALID DOUT Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 5 IS62C1024 READ CYCLE NO. 2(1,3) tRC ISSI ® ADDRESS tAA tOHA OE tDOE tHZOE CE1 tACE1/tACE2 tLZOE CE2 tLZCE1/ tLZCE2 HIGH-Z tHZCE DATA VALID DOUT Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power) -35 Symbol Parameter Write Cycle Time CE1 to Write End CE2 to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time WE Pulse Width Data Setup to Write End Data Hold from Write End (2) -45 Max. — — — — — — — — — 10 — Min. 45 35 35 35 0 0 35 25 0 — 5 Max. — — — — — — — — — 15 — Min. 55 50 50 45 0 0 40 25 0 — 5 -55 Max. — — — — — — — — — 20 — Min. 35 25 25 25 0 0 25 20 0 — 3 -70 Min. Max. 70 60 60 60 0 0 50 30 0 — 5 — — — — — — — — — 25 — Unit ns ns ns ns ns ns ns ns ns ns ns tWC tSCE1 tSCE2 tAW tHA tSA tPWE (4) tSD tHD tHZWE tLZWE (2) WE LOW to High-Z Output WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH. 6 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 IS62C1024 AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2) tWC ISSI ® ADDRESS tSCE1 tHA CE1 tSCE2 CE2 tAW tPWE(4) tSA tHZWE HIGH-Z WE tLZWE DOUT DATA UNDEFINED tSD tHD DIN DATA-IN VALID WRITE CYCLE NO. 2 (CE1, CE2 Controlled)(1,2) tWC ADDRESS tSA tSCE1 tHA CE1 tSCE2 CE2 tAW tPWE(4) WE tHZWE tLZWE HIGH-Z DOUT DATA UNDEFINED tSD tHD DIN DATA-IN VALID Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 7 IS62C1024 ISSI ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) 35 35 45 45 55 55 70 70 Order Part No. IS62C1024-35Q IS62C1024-35T IS62C1024-45Q IS62C1024-45T IS62C1024-55Q IS62C1024-55T IS62C1024-70Q IS62C1024-70T Package 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 ® Industrial Range: –40°C to +85°C Speed (ns) 35 35 45 45 55 55 70 70 Order Part No. IS62C1024-35QI IS62C1024-35TI IS62C1024-45QI IS62C1024-45TI IS62C1024-55QI IS62C1024-55TI IS62C1024-70QI IS62C1024-70TI Package 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 ISSI ® Integrated Silicon Solution, Inc. 2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: sales@issi.com www.issi.com 8 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00