IS62C25616BL-45TLI-TR

IS62C25616BL, IS65C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM MARCH 2013 FEATURES • High-speed access time: 45 ns • Low Active Power: 50 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Package: 44-pin TSOP (Type II) • Commercial, Industrial and Automotive temperature ranges available • Lead-free available DESCRIPTION The ISSI IS62C25616BL and IS65C25616BL are high- speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI's highperformance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62C25616BL and IS65C25616BL are packaged in the JEDEC standard 44-pin TSOP (Type II). FUNCTIONAL BLOCK DIAGRAM A0-A17 DECODER 256K x 16 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte CE OE WE UB LB CONTROL CIRCUIT Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev.  B 03/15/2013 1 IS62C25616BL, IS65C25616BL PIN CONFIGURATIONS* 44-Pin TSOP (Type II) A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 A17 *Please contact ISSI at SRAM@issi.com for availability of 48-pin BGA and 44-pin SOJ packages. PIN DESCRIPTIONS A0-A17 I/O0-I/O15 CE OE WE Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input LB UB NC Vdd GND Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev.  B 03/15/2013 IS62C25616BL, IS65C25616BL TRUTH TABLE I/O PIN Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 Not Selected X H X X X High-Z High-Z Output Disabled H L H X X High-Z High-Z X L X H H High-Z High-Z Read H L L L H Dout High-Z H L L H L High-Z Dout H L L L L Dout Dout Write L L X L H Din High-Z L L X H L High-Z Din L L X L L Din Din Vdd Current Isb1, Isb2 Icc1, Icc2 Icc1, Icc2 Icc1, Icc2 ABSOLUTE MAXIMUM RATINGS(1) Symbol Vterm Tstg Pt Iout Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +7.0 –65 to +150 1.5 20 Unit V °C W mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Cin Cout Parameter Input Capacitance Output Capacitance Conditions Vin = 0V Vout = 0V Max. 6 8 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Voh Vol Vih Vil Ili Ilo Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage(1) Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions Vdd = Min., Ioh = –1.0 mA Vdd = Min., Iol = 2.1 mA GND ≤ Vin ≤ Vdd Com. Ind. Auto. GND ≤ Vout ≤ Vdd Com. Outputs Disabled Ind. Auto. Min. 2.4 — 2.2 –0.3 –1 –2 –5 –1 –2 –5 Max. — 0.4 Vdd + 0.5 0.8 1 2 5 1 2 5 Unit V V V V µA µA Note: 1. Vill (min) = -2.0V AC (pulse width