IS62WV25616EALL-55TLI-TR

IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL 256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EBLL) – 3.3V +/-5% VDD (IS62/65WV25616ECLL)  Package : 44-pin TSOP (Type II) 48-pin mini BGA  Commercial, Industrial and Automotive temperature support  NOVEMBER 2018 DESCRIPTION The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access. The IS62/65WV25616EALL/EBLL/ECLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). Lead-free available FUNCTIONAL BLOCK DIAGRAM DECODER A0 – A17 256K x 16 MEMORY ARRAY VDD GND I/O0 – I/O7 Lower Byte I/O8 – I/O15 Upper Byte CS2 CS1# OE# WE# UB# LB# I/O DATA CIRCUIT COLUMN I/O CONTROL CIRCUIT Copyright © 2018 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 1 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL PIN CONFIGURATIONS 48-Pin mini BGA (6mm x 8mm) 48-Pin mini BGA (6mm x 8mm) 2 CS Option 1 2 3 4 5 6 LB# OE# A0 A1 A2 NC A B I/O8 UB# A3 A4 CS# I/O0 C I/O9 I/O10 A5 A6 I/O1 D GND I/O11 A17 A7 E VDD I/O12 NC F I/O14 I/O13 G I/O15 H NC A 1 2 3 4 5 6 LB# OE# A0 A1 A2 CS2 B I/O8 UB# A3 A4 CS1# I/O0 I/O2 C I/O9 I/O10 A5 A6 I/O1 I/O2 I/O3 VDD D GND I/O11 A17 A7 I/O3 VDD A16 I/O4 GND E VDD I/O12 NC A16 I/O4 GND A14 A15 I/O5 I/O6 F I/O14 I/O13 A14 A15 I/O5 I/O6 NC A12 A13 WE# I/O7 G I/O15 NC A12 A13 WE# I/O7 A8 A9 A10 A11 NC H NC A8 A9 A10 A11 NC PIN DESCRIPTIONS A0-A17 I/O0-I/O15 CS1#, CS2 CS# OE# Address Inputs Data Inputs/Outputs Chip Enable Input Chip Enable Input Output Enable Input WE# LB# Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground UB# NC VDD GND 44-Pin mini TSOP (Type II) A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE# A0 5 40 UB# CS# 6 39 LB# I/O0 7 8 9 38 37 I/O15 I/O1 I/O2 I/O14 I/O13 I/O3 10 35 I/O12 VDD 11 34 GND GND 12 I/O4 13 33 32 VDD I/O11 I/O5 14 I/O6 15 31 30 I/O10 I/O9 I/O7 16 29 I/O8 WE# 17 28 NC A16 18 27 A8 A15 A14 19 26 20 A9 A10 A13 21 25 24 22 23 A12 Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 36 A11 A17 2 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL FUNCTION DESCRIPTION SRAM is one of random access memories. Each byte or word has an address and can be accessed randomly. SRAM has three different modes supported. Each function is described below with Truth Table. Below description is based on the device with 2 CS inputs. STANDBY MODE Device enters standby mode when deselected (CS1# HIGH or CS2 LOW or both UB# and LB# are HIGH). The input and output pins (I/O0-15) are placed in a high impedance state. The current consumption in this mode will be ISB1 or ISB2. CMOS input in this mode will maximize saving power. WRITE MODE Write operation issues with Chip selected (CS1# LOW and CS2 HIGH) and Write Enable (WE#) input LOW. The input and output pins (I/O0-15) are in data input mode. Output buffers are closed during this time even if OE# is LOW. UB# and LB# enables a byte write feature. By enabling LB# LOW, data from I/O pins (I/O0 through I/O7) are written into the location specified on the address pins. And with UB# being LOW, data from I/O pins (I/O8 through I/O15) are written into the location. READ MODE Read operation issues with Chip selected (CS1# LOW and CS2 HIGH) and Write Enable (WE#) input HIGH. When OE# is LOW, output buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. UB# and LB# enables a byte read feature. By enabling LB# LOW, data from memory appears on I/O0-7. And with UB# being LOW, data from memory appears on I/O8-15. In the READ mode, output buffers can be turned off by pulling OE# HIGH. In this mode, internal device operates as READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used. TRUTH TABLE Mode Not Selected Output Disabled Read Write CS1# CS2 WE# OE# LB# UB# I/O0-I/O7 I/O8-I/O15 H X X L L L L L L L L X L X H H H H H H H H X X X H H H H H L L L X X X H H L L L X X X X X H L X L H L L H L X X H X L H L L H L L High-Z High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN VDD Current ISB2 ICC,ICC1 ICC,ICC1 ICC,ICC1 Note: 1. Truth table for the device with 1 CS input is the same with the above table without CS2 column. Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 3 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL ABSOLUTE MAXIMUM RATINGS AND OPERATING RANGE ABSOLUTE MAXIMUM RATINGS(1) Symbol Vt erm Parameter Terminal Voltage with Respect to GND Value –0.5 to VDD + 0.5V Unit V VDD V DD Related to GND –0.3 to 4.0 V tStg Storage Temperature –65 to +150 PT Power Dissipation 1.0 C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. OPERATING RANGE(1) Range Ambient Temperature Part Number SPEED (max) VDD(min) VDD(typ) VDD(max) 55 ns 1.65V 1.8V 2.2V 55 ns 1.65V 1.8V 2.2V Commercial 0C to +70C Industrial -40C to +85C Automotive -40C to +125C 55 ns 1.65V 1.8V 2.2V Commercial ~EALL 0C to +70C 45ns 2.2V 3.0V 3.6V Industrial -40C to +85C 45ns 2.2V 3.0V 3.6V Automotive -40C to +125C 55ns 2.2V 3.0V 3.6V Commercial 0C to +70C 35ns 3.135V 3.3V 3.465V Industrial -40C to +85C 35ns 3.135V 3.3V 3.465V 45ns 3.135V 3.3V 3.465V Automotive Note: 1. ~EBLL ~ECLL -40C to +125C Full device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after Vcc stabilization. PIN CAPACITANCE (1) Parameter Input capacitance DQ capacitance (IO0–IO15) Symbol CIN CI/O Test Condition TA = 25°C, f = 1 MHz, VDD = VDD(typ) Max Units 6 8 pF pF Note: 1. These parameters are guaranteed by design and tested by a sample basis only. THERMAL CHARACTERISTICS (1) Parameter Thermal resistance from junction to ambient (airflow = 1m/s) Thermal resistance from junction to pins Thermal resistance from junction to case Symbol RθJA RθJB RθJC Rating TBD TBD TBD Units °C/W °C/W °C/W Note: 2. These parameters are guaranteed by design and tested by a sample basis only. Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 4 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL AC TEST CONDITIONS (OVER THE OPERATING RANGE) Parameter Unit (1.65V~2.2V) 0V to VDD Input Pulse Level Input Rise and Fall Time Output Timing Reference Level R1 R2 VTM Output Load Conditions 1V/ns 0.9V 13500 10800 1.8V Unit (2.2V~3.6V) 0V to VDD Unit (3.3V +/-5%) 0V to VDD 1V/ns 1V/ns ½ VDD ½ VDD + 0.05V 1005 1213 820 1378 VDD VDD Refer to Figure 1 and 2 OUTPUT LOAD CONDITIONS FIGURES FIGURE 1 FIGURE 2 R1 R1 VTM VTM OUTPUT OUTPUT 30pF, Including jig and scope R2 Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 5pF, Including jig and scope R2 5 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL DC ELECTRICAL CHARACTERISTICS IS62(5)WV25616EALL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE) VDD = 1.65V ~ 2.2V Symbol VOH VOL VIH(1) VIL(1) ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage Test Conditions I OH = -0.1 mA IOL = 0.1 mA GND < VIN < VDD GND < VIN < VDD, Output Disabled Min 1.4 — 1.4 –0.2 –1 –1 Max — 0.2 VDD + 0.2 0.4 1 1 Unit V V V V µA µA Notes: 1. VILL(min) = -1.0V AC (pulse width < 10ns). Not 100% tested. VIHH (max) = VDD + 1.0V AC (pulse width < 10ns). Not 100% tested. IS62(5)WV25616EBLL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE) VDD = 2.2V ~ 3.6V Symbol VOH Parameter Output HIGH Voltage VOL Output LOW Voltage Max — — 0.4 0.4 VDD + 0.3 VDD + 0.3 0.6 0.8 1 1 Unit V V V V V V V V µA µA IS62(5)WV25616ECLL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE) VDD = 3.3V +/-5%(2) Symbol Parameter Test Conditions Min Max VOH Output HIGH Voltage I OH = -1.0 mA 2.4 — VOL Output LOW Voltage IOL = 2.1 mA — 0.4 VIH(1) Input HIGH Voltage 2.0 VDD + 0.3 (1) VIL Input LOW Voltage –0.3 0.8 ILI Input Leakage GND < VIN < VDD –1 1 ILO Output Leakage GND < VIN < VDD, Output Disabled –1 1 Unit V V V V µA µA VIH(1) Input HIGH Voltage VIL(1) Input LOW Voltage ILI ILO Input Leakage Output Leakage Test Conditions 2.2 ≤ V DD < 2.7, I OH = -0.1 mA 2.7 ≤ V DD ≤ 3.6, I OH = -1.0 mA 2.2 ≤ V DD < 2.7, IOL = 0.1 mA 2.7 ≤ V DD ≤ 3.6, IOL = 2.1 mA 2.2 ≤ V DD < 2.7 2.7 ≤ V DD ≤ 3.6 2.2 ≤ V DD < 2.7 2.7 ≤ V DD ≤ 3.6 GND < VIN < VDD GND < VIN < VDD, Output Disabled Min 2.0 2.4 — — 1.8 2.0 –0.3 –0.3 –1 –1 Notes: 1. VILL(min) = -2.0V AC (pulse width < 10ns). Not 100% tested. VIHH (max) = VDD + 2.0V AC (pulse width < 10ns). Not 100% tested. Notes: 1. VILL(min) = -2.0V AC (pulse width < 10ns). Not 100% tested. VIHH (max) = VDD + 2.0V AC (pulse width < 10ns). Not 100% tested. 2. VDD=3.3V +/-5% is for high speed of 35ns device (ECLL). Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 6 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL IS62(5)WV25616EALL DC ELECTRICAL CHARACTERISTICS-II FOR POWER (OVER THE OPERATING RANGE) Symbol Parameter Test Conditions ICC VDD Dynamic Operating Supply Current VDD=VDD(max), IOUT=0mA, f = fmax CS1# = VIL, CS2 = VIH ICC1 VDD Static Operating Supply Current VDD=VDD(max), IOUT = 0mA, f=0 CS1# = VIL, CS2 = VIH CMOS Standby Current (CMOS Inputs) VDD = VDD(max), f = 0, CS1# ≥ VDD - 0.2V or 0V ≤ CS2 ≤ 0.2V or LB# and UB# ≥ VDD - 0.2V VIN ≤ 0.2V or VIN ≥ VDD - 0.2V ISB2 Grade Ind. Auto. A3 Note: 1. Max 25°C 3.7 6 40°C 3.8 7 70°C 3.9 9 85°C 4.1 10 8.1 25 Com. Ind. Auto. A3 Com. Ind. Auto. A3 Com. 55ns Typ(1) - 125°C 20 22 22 5 5 5 Unit mA mA µA Typical values are measured at VDD = 1.8V, and not 100% tested. IS62(5)WV25616EBLL/ECLL DC ELECTRICAL CHARACTERISTICS-II FOR POWER (OVER THE OPERATING RANGE) Symbol Parameter Test Conditions ICC VDD Dynamic Operating Supply Current VDD=VDD(max), IOUT=0mA, f = fmax CS1# = VIL, CS2 = VIH ICC1 VDD Static Operating Supply Current VDD=VDD(max), IOUT = 0mA, f=0 CS1# = VIL, CS2 = VIH CMOS Standby Current (CMOS Inputs) VDD = VDD(max), f = 0, CS1# ≥ VDD - 0.2V or 0V ≤ CS2 ≤ 0.2V or LB# and UB# ≥ VDD - 0.2V VIN ≤ 0.2V or VIN ≥ VDD - 0.2V ISB2 Grade Ind. Auto. A3 45/55ns Max Max 22 25 5 5 - Typ(2) - 25°C 3.7 6 3.7 6 40°C 3.8 7 3.8 7 70°C 3.9 9 3.9 9 85°C 4.1 10 4.1 10 8.1 25 8.1 25 Com. Ind. Auto. A3 Com. Ind. Auto. A3 Com. 35ns(1) Typ(2) - 125°C Unit 20 22 22 5 5 5 mA mA µA Notes: 1. 35 ns speed bin is for ECLL (VDD=3.3V +/-5%) only. 2. Typical values are measured at VDD = 3.0V , and not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 7 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL AC CHARACTERISTICS(6) (OVER OPERATING RANGE) READ CYCLE AC CHARACTERISTICS 35ns(7) Min Max 45ns Min Max 55ns Min Max Parameter Symbol unit notes Read Cycle Time Address Access Time Output Hold Time tRC tAA tOHA 35 8 35 - 45 10 45 - 55 10 55 - ns ns ns 1,5 1 1 CS1#, CS2 Access Time UB#, LB# Access Time OE# Access Time OE# to High-Z Output OE# to Low-Z Output CS1#, CS2 to High-Z Output tACS1/ACS2 tBA tDOE tHZOE tLZOE tHZCS 4 - 35 35 18 12 12 5 - 45 45 20 15 15 5 - 55 55 25 20 20 ns ns ns ns ns ns 1 1 1 2 2 2 CS1#, CS2 to Low-Z Output UB#, LB# to High-Z Output UB#, LB# to Low-Z Output tLZCS tHZB tLZB 10 10 12 - 10 10 15 - 10 10 20 - ns ns ns 2 2 2 unit notes WRITE CYCLE AC CHARACTERISTICS Parameter Symbol Write Cycle Time CS1#, CS2 to Write End Address Setup Time to Write End UB#,LB# to Write End Address Hold from Write End Address Setup Time WE# Pulse Width Data Setup to Write End Data Hold from Write End WE# LOW to High-Z Output WE# HIGH to Low-Z Output 35ns(7) 45ns 55ns Min Max Min Max Min Min tWC tSCS tAW tPWB tHA 35 30 30 30 0 - 45 35 35 35 0 - 55 40 40 40 0 - ns ns ns ns ns 1,3,5 1,3 1,3 1,3 1,3 tSA tPWE tSD tHD tHZWE tLZWE 0 30 18 0 4 12 - 0 35 20 0 5 15 - 0 40 25 0 5 20 - ns ns ns ns ns ns 1,3 1,3,4 1,3 1,3 2,3 2,3 Notes: 1. Tested with the load in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. tHZOE, tHZCS, tHZB, and tHZWE transitions are measured when the output enters a high impedance state. Not 100% tested. 3. The internal write time is defined by the overlap of CS1# = LOW, CS2=HIGH, UB# or LB# = LOW, and WE# = LOW. All four conditions must be in valid states to initiate a Write, but any condition can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 4. tPWE > tHZWE + tSD when OE# is LOW. 5. Address inputs must meet VIH and VIL SPEC during this period. Any glitch or unknown inputs are not permitted. Unknown input with standby mode is acceptable. 6. Data retention characteristics are defined later in DATA RETENTION CHARACTERISTICS. 7. 35 ns speed bin is for ECLL (VDD=3.3V +/-5%) only . Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 8 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL Timing Diagram READ CYCLE NO. 1(1) (ADDRESS CONTROLLED, CS1# = OE# = UB# = LB# = LOW, CS2 = WE# = HIGH) tRC Address tAA tOHA tOHA DQ 0-15 PREVIOUS DATA VALID LOW-Z DATA VALID Notes: 1. The device is continuously selected. READ CYCLE NO. 2(1) (OE# CONTROLLED, WE# = HIGH) tRC ADDRESS tAA tOHA tDOE OE# tHZOE tLZOE CS1# tHZCS1/ tHZCS2 tACS1/tACS2 CS2 tLZCS1/ tLZCS2 UB#,LB# tHZB tBA tLZB DOUT HIGH-Z LOW-Z DATA VALID Notes: 1. Address is valid prior to or coincident with CS1# LOW or CS2 HIGH transition. Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 9 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL WRITE CYCLE NO. 1(1,2) (CS1# , CS2 CONTROLLED, OE# = HIGH OR LOW) tWC ADDRESS tSCS1 tSA CS1# tHA tSCS2 CS2 tAW tPWE WE# tPWB UB#, LB# tHZWE DATA UNDEFINED DOUT HIGH-Z (1) tSD DATA UNDEFINED DIN (2) tLZWE tHD DATA IN VALID Notes: 1. tHZWE is based on the assumption when tSA=0nS after READ operation. Actual DOUT for tHZWE may not appear if OE# goes high before Write Cycle. tHZOE is the time DOUT goes to High-Z after OE# goes high. 2. During this period the I/Os are in output state. Do not apply input signals. WRITE CYCLE NO. 2(1,2) (WE# CONTROLLED: OE# IS HIGH DURING WRITE CYCLE) tWC ADDRESS tSCS1 CS1# tSCS2 CS2 WE# tHA tAW tPWE tSA tPWB UB#, LB# OE# DOUT tHZOE DATA UNDEFINED HIGH-Z (1) tSD DIN DATA UNDEFINED (2) tHD DATA IN VALID Notes: 1. tHZOE is the time DOUT goes to High-Z after OE# goes high. 2. During this period the I/Os are in output state. Do not apply input signals. Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 10 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL WRITE CYCLE NO. 3 (WE# CONTROLLED: OE# IS LOW DURING WRITE CYCLE) tWC ADDRESS tSCS1 CS1# tHA tSCS2 CS2 tAW WE# tPWE tSA tPWB UB#, LB# tHZWE DOUT DATA UNDEFINED (1) HIGH-Z tSD DIN DATA UNDEFINED (2) tLZWE tHD DATA IN VALID Note: 1. If OE# is low during write cycle, tHZWE must be met in the application. Do not apply input signal during this period. Data output from the previous READ operation will drive IO BUS. Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 11 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL WRITE CYCLE NO. 4 (UB# & LB# Controlled, OE# = LOW) tWC tWC ADDRESS ADDRESS 1 ADDRESS 2 CS1#=LOW CS2=HIGH OE#=LOW tSA tHA tSA tHA WE# tPWB UB#, LB# tPWB WORD 1 WORD 2 tHZWE DOUT tLZWE HIGH-Z DATA UNDEFINED tHD tSD DIN DATA IN VALID DATA IN VALID Notes: 1. If OE# is low during write cycle, tHZWE must be met in the application. Do not apply input signal during this period. Data output from the previous READ operation will drive IO BUS. 2. Due to the restriction of note1, OE# is recommended to be HIGH during write period. 3. Note WE# stays LOW in this example. If WE# toggles, tPWE and tHZWE must be considered. Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 12 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL DATA RETENTION CHARACTERISTICS Symbol VDR Parameter VDD for Data Retention Test Condition OPTION See Data Retention Waveform IDR Data Retention Current tSDR Data Retention Setup Time Recovery Time tRDR VDD= VDR(min), CS1# ≥ VDD – 0.2V,(1) or 0V ≤ CS2 ≤ 0.2V, or LB# and UB# ≥ VDD -0.2V, VIN ≤ 0.2V or VIN ≥ VDD - 0.2V Min Typ 1.5 Max Unit 3.6 V Com. - - 9 Ind. - 10 Auto A3 - - typ.(2) 25 uA 3.6 See Data Retention Waveform 0 - See Data Retention Waveform tRC - - ns ns Note: 1. If CS1# >VDD–0.2V, all other inputs including CS2 and UB# and LB# must meet this condition. 2. Typical values are measured at VDD=1.8V or 3V, TA = 25C , and not 100% tested. 3. VDD power down slope must be longer than 100 us/volt when enter into Data Retention Mode. DATA RETENTION WAVEFORM (CS1# CONTROLLED) Data Retention Mode tSDR tRDR VDD VDR CS1# > VDD – 0.2V CS1# GND DATA RETENTION WAVEFORM (CS2 CONTROLLED) DATA RETENTION MODE VDD CS2 tSDR tRDR VDR CS2 < 0.2V GND Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 13 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL DATA RETENTION WAVEFORM (UB# AND LB# CONTROLLED) tSDR Data Retention Mode tRDR VDD VDR UB#/LB# UB# and LB# > VDD – 0.2V GND Note: 1. CS2 must satisfy either CS2 ≥ VDD - 0.2V or CS2 ≤ 0.2V 2. CS1# must satisfy either CS1# ≥ VDD - 0.2V or CS1# ≤ 0.2V Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 14 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL ORDERING INFORMATION IS62WV25616EALL (1.65V - 2.2V) Industrial Range: –40°C to +85°C Speed (ns) Order Part No. Package 55 IS62WV25616EALL-55TI TSOP (Type II) 55 IS62WV25616EALL-55TLI TSOP (Type II), Lead-free 55 IS62WV25616EALL-55BI mini BGA (6mm x 8mm) 55 IS62WV25616EALL-55B2I mini BGA (6mm x 8mm), 2 CS Option 55 IS62WV25616EALL-55BLI mini BGA (6mm x 8mm), Lead-free AUTOMOTIVE RANGE (A3): –40°C TO +125°C *PLEASE CONTACT ISSI MARKETING IS62WV25616EBLL (2.2V - 3.6V) Industrial Range: –40°C to +85°C Speed (ns) 45 55 Order Part No. Package IS62WV25616EBLL-45TI TSOP (Type II) IS62WV25616EBLL-45TLI TSOP (Type II), Lead-free IS62WV25616EBLL-45BI mini BGA (6mm x 8mm) IS62WV25616EBLL-45BLI mini BGA (6mm x 8mm), Lead-free IS62WV25616EBLL-45B2I mini BGA (6mm x 8mm), 2 CS Option IS62WV25616EBLL-45B2LI mini BGA (6mm x 8mm), 2 CS Option, Lead-free IS62WV25616EBLL-55TI TSOP (Type II) IS62WV25616EBLL-55TLI TSOP (Type II), Lead-free IS62WV25616EBLL-55BI mini BGA (6mm x 8mm) IS62WV25616EBLL-55BLI mini BGA (6mm x 8mm), Lead-free IS62WV25616EBLL-55B2I mini BGA (6mm x 8mm), 2 CS Option IS62WV25616EBLL-55B2LI mini BGA (6mm x 8mm), 2 CS Option, Lead-free Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 15 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL Automotive Range (A1): –40°C to +85°C Speed (ns) Order Part No. Package 45 IS65WV25616EBLL-45CTLA1 TSOP (Type II), Lead-free, Copper Lead-frame 45 IS65WV25616EBLL-45BA1 mini BGA (6mm x 8mm) 45 IS65WV25616EBLL-45BLA1 mini BGA (6mm x 8mm), Lead-free Automotive Range (A3): –40°C to +125°C Speed (ns) Order Part No. Package 55 IS65WV25616EBLL-55CTLA3 TSOP (Type II), Lead-free, Copper Lead-frame 55 IS65WV25616EBLL-55BA3 mini BGA (6mm x 8mm) 55 IS65WV25616EBLL-55BLA3 mini BGA (6mm x 8mm), Lead-free IS62WV25616ECLL (3.3V +/-5%) Industrial Range: –40°C to +85°C Speed (ns) Order Part No. Package 35 IS62WV25616ECLL-35TI TSOP (Type II) 35 IS62WV25616ECLL-35TLI TSOP (Type II), Lead-free 35 IS62WV25616ECLL-35BI mini BGA (6mm x 8mm) 35 IS62WV25616ECLL-35BLI mini BGA (6mm x 8mm), Lead-free 35 IS62WV25616ECLL-35B2I mini BGA (6mm x 8mm), 2 CS Option 35 IS62WV25616ECLL-35B2LI mini BGA (6mm x 8mm), 2 CS Option, Lead-free Automotive Range (A3): –40°C to +125°C Speed (ns) Order Part No. Package 45 IS65WV25616ECLL-45CTLA3 TSOP (Type II), Lead-free, Copper Lead-frame 45 IS65WV25616ECLL-45BA3 mini BGA (6mm x 8mm) 45 IS65WV25616ECLL-45BLA3 mini BGA (6mm x 8mm), Lead-free Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 16 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL PACKAGE INFORMATION Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 17 IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL Integrated Silicon Solution, Inc.- www.issi.com Rev. A3 11/27/2018 18