IS62WV51216EALL-55TLI

IS62/65WV51216EALL IS62/65WV51216EBLL MARCH 2016 512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES       High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW (typical) operating TTL compatible interface levels Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL) Data control for upper and lower bytes o o Automotive temperature (-40 C to +125 C) DESCRIPTION The IS62WV51216EALL/ IS62WV51216EBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using 's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When is HIGH (deselected) or when CS2 is low (deselected) or when is low , CS2 is high and both and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable controls both writing and reading of the memory. A data byte allows Upper Byte and Lower Byte ( access. The IS62WV51216EALL and IS62WV51216EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x8mm), 44-Pin TSOP (TYPE II) and 48-pin TSOP (TYPE l). BLOCK DIAGRAM Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 1 IS62/65WV51216EALL IS62/65WV51216EBLL PIN CONFIGURATIONS (512Kx16) 48-Pin mini BGA (6mm x 8mm) 44-Pin TSOP (Type II) 2 CS Option (Package Code T2) 48-pin TSOP-I (12mm x 20mm) PIN DESCRIPTIONS A0-A18 I/O0-I/O15 , CS2 Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) NC VDD GND No Connection Power Ground Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 2 IS62/65WV51216EALL IS62/65WV51216EBLL FUNCTION DESCRIPTION SRAM is one of random access memories. Each byte or word has an address and can be accessed randomly. SRAM has three different modes supported. Each function is described below with Truth Table. STANDBY MODE Device enters standby mode when deselected ( HIGH or CS2 LOW or both and are HIGH). The input and output pins (I/O0-15) are placed in a high impedance state. The current consumption in this mode will be either ISB1 or ISB2 depending on the input level. CMOS input in this mode will maximize saving power. WRITE MODE Write operation issues with Chip selected ( LOW and CS2 HIGH) and Write Enable ( ) input LOW. The input and output pins(I/O0-15) are in data input mode. Output buffers are closed during this time even if is LOW. and enables a byte write feature. By enabling LOW, data from I/O pins (I/O0 through I/O7) are written into the location specified on the address pins. And with being LOW, data from I/O pins (I/O8 through I/O15) are written into the location. READ MODE Read operation issues with Chip selected ( LOW and CS2 HIGH) and Write Enable ( ) input HIGH. When is LOW, output buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. and enables a byte read feature. By enabling LOW, data from memory appears on I/O0-7. And with being LOW, data from memory appears on I/O8-15. In the READ mode, output buffers can be turned off by pulling HIGH. In this mode, internal device operates as READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used. TRUTH TABLE Mode Not Selected Output Disabled Read Write CS2 H X X L L L L L L L L X L X H H H H H H H H X X X H H H H H L L L Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 X X X H H L L L X X X X X H L X L H L L H L X X H X L H L L H L L I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN VDD Current ISB1,ISB2 ICC ICC ICC 3 IS62/65WV51216EALL IS62/65WV51216EBLL ABSOLUTE MAXIMUM RATINGS AND OPERATING RANGE ABSOLUTE MAXIMUM RATINGS(1) Symbol Vt er m tBIAS Parameter Terminal Voltage with Respect to GND Temperature Under Bias Value –0.2 to +3.9(VDD+0.3V) –55 to +125 VDD V DD Related to GND –0.2 to +3.9(VDD+0.3V) tStg Storage Temperature –65 to +150 IOUT DC Output Current (LOW) 20 Unit V C V C mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. OPERATING RANGE(1) Range Device Marking Ambient Temperature VDD(min) VDD(typ) VDD(max) Commercial IS62WV51216EALL Industrial IS62WV51216EALL 0C to +70C 1.65V 1.8V 2.2V -40C to +85C 1.65V 1.8V 2.2V Automotive IS65WV51216EALL -40C to +125C 1.65V 1.8V 2.2V Commercial IS62WV51216EBLL 0C to +70C 2.2V 3.3V 3.6V Industrial IS62WV51216EBLL -40C to +85C 2.2V 3.3V 3.6V Automotive IS65WV51216EBLL -40C to +125C 2.2V 3.3V 3.6V Note: 1. Full device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after Vcc stabilization. PIN CAPACITANCE (1) Parameter Symbol Input capacitance DQ capacitance (IO0–IO15) CIN CI/O Test Condition TA = 25°C, f = 1 MHz, VDD = VDD(typ) Max Units 10 10 pF pF Note: 1. These parameters are guaranteed by design and tested by a sample basis only. THERMAL CHARACTERISTICS (1) Parameter Thermal resistance from junction to ambient (airflow = 0m/s) Thermal resistance from junction to case (airflow = 0m/s) Package 44-pin TSOP-II 48-ball VFBGA 44-pin TSOP-II 48-ball VFBGA Symbol RθJA RθJC Rating 51.8 48.05 9.6 13.35 Units °C/W °C/W Note: 1. These parameters are guaranteed by design and tested by a sample basis only. Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 4 IS62/65WV51216EALL IS62/65WV51216EBLL ELECTRICAL CHARACTERISTICS IS62(5)WV51216EALL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE) Symbol VOH VOL (1) VIH (1) VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage Test Conditions I OH = -0.1 mA IOL = 0.1 mA GND < VIN < VDD GND < VIN < VDD, Output Disabled Min. 1.4 — 1.4 –0.2 –1 –1 Max. — 0.2 VDD + 0.2 0.4 1 1 Unit V V V V µA µA Notes: 1. VILL(min) = -1.0V AC (pulse width < 10ns). Not 100% tested. VIHH (max) = VDD + 1.0V AC (pulse width < 10ns). Not 100% tested. IS62(5)WV51216EBLL DC ELECTRICAL CHARACTERISTICS-I (OVER THE OPERATING RANGE) Symbol VOH Parameter Output HIGH Voltage VOL Output LOW Voltage (1) Input HIGH Voltage (1) Input LOW Voltage VIH VIL ILI ILO Input Leakage Output Leakage Test Conditions 2.2 ≤ V DD < 2.7, I OH = -0.1 mA 2.7 ≤ V DD ≤ 3.6, I OH = -1.0 mA 2.2 ≤ V DD < 2.7, IOL = 0.1 mA 2.7 ≤ V DD ≤ 3.6, IOL = 2.1 mA 2.2 ≤ V DD < 2.7 2.7 ≤ V DD ≤ 3.6 2.2 ≤ V DD < 2.7 2.7 ≤ V DD ≤ 3.6 GND < VIN < VDD GND < VIN < VDD, Output Disabled Min. 2.0 2.4 — — 1.8 2.2 –0.3 –0.3 –1 –1 Max. — — 0.4 0.4 VDD + 0.3 VDD + 0.3 0.6 0.8 1 1 Unit V V V V V V V V µA µA Notes: 1. VILL(min) = -2.0V AC (pulse width < 10ns). Not 100% tested. VIHH (max) = VDD + 2.0V AC (pulse width < 10ns). Not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 5 IS62/65WV51216EALL IS62/65WV51216EBLL IS62(5)WV51216EALL DC ELECTRICAL CHARACTERISTICS-II FOR POWER (OVER THE OPERATING RANGE) Symbol ICC ICC1 ISB2 Parameter VDD Dynamic Operating Supply Current VDD Static Operating Supply Current CMOS Standby Current (CMOS Inputs) Test Conditions VDD=VDD(max), IOUT=0mA, f=fMAX VDD=VDD(max), IOUT = 0mA, f=0Hz VDD=VDD(max), (1) 0V ≤ CS2 ≤ 0.2V or (2) ≥ VDD - 0.2V, CS2 ≥ VDD - 0.2V or (3) and ≥ VDD- 0.2V ≤ 0.2V, CS2 ≥ VDD - 0.2V Grade Com. Ind. Auto. Com. Ind. Auto. o 25 C (1) Typ. 11.1 Max. 12 15 15 6 6 6 15 45 C o 11.4 17 o 70 C 13.6 20 Ind./Auto A1 15.1 25 Auto. A3 28.4 50 Com. Unit mA mA µA Note: 1. Typical values are measured at VDD = 1.8V and not 100% tested. IS62(5)WV51216EBLL DC ELECTRICAL CHARACTERISTICS-II FOR POWER (OVER THE OPERATING RANGE) Symbol ICC ICC1 ISB2 Parameter VDD Dynamic Operating Supply Current VDD Static Operating Supply Current CMOS Standby Current (CMOS Inputs) Test Conditions VDD=VDD(max), IOUT=0mA, f=fMAX VDD=VDD(max), IOUT = 0mA, f=0Hz VDD=VDD(max), (1) 0V ≤ CS2 ≤ 0.2V or (2) ≥ VDD - 0.2V, CS2 ≥ VDD - 0.2V or (3) and ≥ VDD- 0.2V ≤ 0.2V, CS2 ≥ VDD - 0.2V Grade Com. Ind. Auto. Com. Ind. Auto. o 25 C (1) Typ. 11.1 Max. 15 15 15 6 6 6 15 45 C o 11.4 17 o 70 C 13.6 20 Ind./Auto A1 15.1 25 Auto. A3 28.4 50 Com. Unit mA mA µA Note: 1. Typical values are measured at VDD = 3.0V, and not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 6 IS62/65WV51216EALL IS62/65WV51216EBLL AC CHARACTERISTICS(6) (OVER OPERATING RANGE) READ CYCLE AC CHARACTERISTICS Parameter Symbol Read Cycle Time Address Access Time Output Hold Time , CS2 Access Time Access Time to High-Z Output to Low-Z Output , CS2 to High-Z Output , CS2 to Low-Z Output , Access Time , to High-Z Output , to Low-Z Output 45ns 55ns unit notes 55 ns ns 1,5 1 8 5 - 55 25 18 18 ns ns ns ns ns ns 1 1 1 2 2 2 10 10 55 18 - ns ns ns ns 2 1 2 2 unit notes Min Max Min Max tRC tAA 45 - 45 55 - tOHA tACS1/tACS2 tDOE tHZOE tLZOE tHZCS//tHZCS2 8 5 - 45 22 18 18 tLZCS/tLZCS2 tBA tHZB tLZB 10 10 45 18 - WRITE CYCLE AC CHARACTERISTICS Parameter Symbol Write Cycle Time ,CS2 to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time ,/ Valid to End of Write Pulse Width Data Setup to Write End Data Hold from Write End LOW to High-Z Output HIGH to Low-Z Output 45ns 55ns Min Max Min Max tWC 45 - 55 - ns 1,3,5 tSCS1/tSCS2 tAW tHA tSA tPWB tPWE 35 35 0 0 35 35 - 40 40 0 0 40 40 - ns ns ns ns ns ns 1,3 1,3 1,3 1,3 1,3 1,3,4 tSD tHD tHZWE tLZWE 28 0 10 18 - 28 0 10 18 - ns ns ns ns 1,3 1,3 2,3 2,3 Notes: 1. Tested with the load in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. tHZOE, tHZCS, tHZB, and tHZWE transitions are measured when the output enters a high impedance state. Not 100% tested. 3. The internal write time is defined by the overlap of =LOW, CS2=HIGH, ( or )=LOW, and =LOW. All four conditions must be in valid states to initiate a Write, but any condition can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 4. tPWE > tHZWE + tSD when OE is LOW. 5. Address inputs must meet VIH and VIL SPEC during this period. Any glitch or unknown inputs are not permitted. Unknown input with standby mode is acceptable. 6. Data retention characteristics are defined later in DATA RETENTION CHARACTERISTICS. Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 7 IS62/65WV51216EALL IS62/65WV51216EBLL AC TEST CONDITIONS (OVER THE OPERATING RANGE) Parameter Input Rise Time Input Fall Time Output Timing Reference Level Output Load Conditions Symbol Conditions Units TR TF VREF 1.0 1.0 ½ VTM V/ns V/ns V Refer to Figure 1 and 2 OUTPUT LOAD CONDITIONS FIGURES Figure1 Figure2 R1 R1 VTM VTM OUTPUT OUTPUT 30pF, including jig and scope Parameters Input Pulse Level R1 R2 VTM R2 VDD=1.65~2.2V 0.4V to VDD-0.2V 13500Ω 10800Ω VDD Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 5pF, including jig and scope R2 VDD=2.2~2.7V VDD=2.7~3.6V 0.4V to VDD-0.3V 16667Ω 1103Ω 15385Ω 1554Ω VDD VDD 8 IS62/65WV51216EALL IS62/65WV51216EBLL TIMING DIAGRAM READ CYCLE NO. 1(1,2) (ADDRESS CONTROLLED) ( = =VIL, CS2= =VIH) tRC ADDRESS tAA tOHA tOHA I/O0-15 PREVIOUS DATA VALID READ CYCLE NO. 2(1,3) ( , CS2, Low-Z , AND & DATA VALID Low-Z CONTROLLED) tRC ADDRESS tAA tOHA tHZOE tDOE tLZOE tACS1/tACS2 CS2 tLZCS1/ tLZCS2 tHZCS1/ tHZCS2 , tBA tHZB tLZB I/O0-15 Notes: 1. is HIGH for Read Cycle. 2. The device is continuously selected. , 3. Address is valid prior to or coincident with HIGH-Z , , or =VIL.CS2= LOW transition. Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 DATA VALID LOW-Z =VIH. 9 IS62/65WV51216EALL IS62/65WV51216EBLL WRITE CYCLE NO. 1 ( CONTROLLED, = HIGH OR LOW) tWC ADDRESS tSCS1 tHA tSCS2 CS2 tAW tPWE tPWB , tHZWE tSA DOUT tLZWE DATA UNDEFINED(1) tSD DIN DATA UNDEFINED (2) tHD DATA VALID Notes: 1. tHZWE is based on the assumption when tSA=0nS after READ operation. Actual DOUT for tHZWE may not appear if Write Cycle. tHZOE is the time DOUT goes to High-Z after goes high. 2. During this period the I/Os are in output state. Do not apply input signals. WRITE CYCLE NO. 2 ( CONTROLLED: goes high before IS HIGH DURING WRITE CYCLE) tWC ADDRESS tSCS1 tHA tSCS2 CS2 tAW tPWE tPWB tSA DOUT DATA UNDEFINED(1) tHZWE tLZWE HIGH-Z tSD DIN DATA UNDEFINED(2) tHD DATA VALID Notes: 1. tHZWE is based on the assumption when tSA=0nS after READ operation. Actual DOUT for tHZWE may not appear if Write Cycle. tHZOE is the time DOUT goes to High-Z after goes high. 2. During this period the I/Os are in output state. Do not apply input signals. Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 goes high before 10 IS62/65WV51216EALL IS62/65WV51216EBLL WRITE CYCLE NO. 3 ( CONTROLLED: IS LOW DURING WRITE CYCLE) tWC ADDRESS LOW tHA tSCS1 tSCS2 CS2 tAW tPWE tPWB tSA DOUT tLZWE tHZWE DATA UNDEFINED(1) HIGH-Z tSD DIN DATA UNDEFINED(1) tHD DATA VALID Notes: 1. If is low during write cycle, tHZWE must be met in the application. Do not apply input signal during this period. Data output from the previous READ operation will drive IO BUS. Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 11 IS62/65WV51216EALL IS62/65WV51216EBLL WRITE CYCLE NO. 4 ( & CONTROLLED) tWC tWC ADDRESS tSA LOW HIGH CS2 tHA tHA tSA tPWB tPWB tLZWE tHZWE DOUT DATA UNDEFINED(1) tHD DIN tHD tSD tSD DATA VALID DATA VALID Notes: 1. If is low during write cycle, tHZWE must be met in the application. Do not apply input signal during this period. Data output from the previous READ operation will drive IO BUS. 2. Due to the restriction of note1, is recommended to be HIGH during write period. 3. Note stays LOW in this example. If toggles, tPWE and tHZWE must be considered. Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 12 IS62/65WV51216EALL IS62/65WV51216EBLL DATA RETENTION CHARACTERISTICS Symbol Parameter Test Condition OPTION VDR VDD for Data Retention See Data Retention Waveform IS62(5)WV51216EALL IS62(5)WV51216EBLL Data Retention Current VDD= VDR(min), (1) 0V ≤ CS2 ≤ 0.2V, or (2) ≥ VDD – 0.2V, CS2 ≥ VDD - 0.2V (3) and ≥ VDD -0.2V, ≤ 0.2V, CS2 ≥ VDD - 0.2V IDR Min. Typ. (2) Max. Unit 1.5 - V 1.5 - V uA Com. - - 20 Ind. - - 25 Auto - - 50 tSDR Data Retention Setup Time See Data Retention Waveform 0 - - ns tRDR Recovery Time See Data Retention Waveform tRC - - ns Note: 1. If >VDD–0.2V, all other inputs including CS2 and and must meet this condition. 2. Typical values are measured at VDD=VDR(min), TA = 25℃ and not 100% tested. DATA RETENTION WAVEFORM ( CONTROLLED) tSDR DATA RETENTION MODE tRDR VDD VDR > VDD-0.2V GND DATA RETENTION WAVEFORM (CS2 CONTROLLED) DATA RETENTION MODE VDD CS2 tSDR tRDR VDR CS2 < 0.2V GND Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 13 IS62/65WV51216EALL IS62/65WV51216EBLL DATA RETENTION WAVEFORM ( AND CONTROLLED) Note: 1. CS2 must satisfy either CS2 ≥ Vcc -0.2V or CS2 ≤ 0.2V 2. must satisfy either ≥ Vcc -0.2V or ≤ 0.2V Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 14 IS62/65WV51216EALL IS62/65WV51216EBLL ORDERING INFORMATION IS62/65WV51216EALL (1.65V - 2.2V) Industrial Range: –40°C to +85°C Speed (ns) 55 Order Part No. Package IS62WV51216EALL-55TI TSOP-II IS62WV51216EALL-55TLI TSOP-II, Lead-free IS62WV51216EALL-55BI mini BGA IS62WV51216EALL-55BLI mini BGA, Lead-free ORDERING INFORMATION IS62/65WV51216EBLL (2.2V - 3.6V) Industrial Range: –40°C to +85°C Speed (ns) 45 55 Order Part No. Package IS62WV51216EBLL-45TI TSOP-II IS62WV51216EBLL-45TLI TSOP-II, Lead-free IS62WV51216EBLL-45T2LI 2 CS option TSOP l, Lead-free IS62WV51216EBLL-45BI mini BGA IS62WV51216EBLL-45BLI mini BGA, Lead-free IS62WV51216EBLL-55TI TSOP-II IS62WV51216EBLL-55TLI TSOP-II, Lead-free IS62WV51216EBLL-55BI mini BGA IS62WV51216EBLL-55BLI mini BGA, Lead-free Automotive Range A3: –40°C to +125°C Speed (ns) 45 Order Part No. Package IS65WV51216EBLL-45BA3 mini BGA IS65WV51216EBLL-45BLA3 mini BGA, Lead-free IS65WV51216EBLL-45CTA3 TSOP ll, Copper Leadframe IS65WV51216EBLL-45CTLA3 TSOP ll, Lead-free, Copper Leadframe Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 15 IS62/65WV51216EALL IS62/65WV51216EBLL PACKAGE INFORMATION Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 16 IS62/65WV51216EALL IS62/65WV51216EBLL Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 17 IS62/65WV51216EALL IS62/65WV51216EBLL Integrated Silicon Solution, Inc.- www.issi.com Rev. D 03/25/2016 18