IS64C1024AL

IS61C1024AL IS64C1024AL 128K x 8 HIGH-SPEED CMOS STATIC RAM ISSI JANUARY 2005 ® FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW (typical) • Low standby power: 1000 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply • Commercial, industrial, and automotive temperature ranges available • Lead free available DESCRIPTION The ISSI IS61C1024AL/IS64C1024AL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C1024AL/IS64C1024AL is available in 32-pin 300mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20), and 32-pin sTSOP (Type I, 8 x 13.4) packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K x 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 1 IS61C1024AL, IS64C1024AL PIN CONFIGURATION 32-Pin SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 ISSI 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 ® PIN CONFIGURATION 32-Pin TSOP (Type 1) (T) and sTSOP (Type 1) (H) A11 A9 A8 A13 WE CE2 A15 VDD NC A16 A14 A12 A7 A6 A5 A4 PIN DESCRIPTIONS A0-A16 CE1 CE2 OE WE I/O0-I/O7 VDD GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground Range Commercial Industrial Ambient Temperature 0°C to +70°C -40°C to +85°C VDD 5V ± 10% 5V ± 10% OPERATING RANGE (IS61C1024AL) OPERATING RANGE (IS64C1024AL) Range Automotive Ambient Temperature -40°C to +125°C VDD 5V ± 10% TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 IS61C1024AL, IS64C1024AL ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +7.0 –65 to +150 1.5 20 Unit V °C W mA ISSI ® Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 5 7 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter VOH VOL VIH VIL ILI Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage GND ≤ VIN ≤ VDD Com. Ind. Auto. Com. Ind. Auto. Test Conditions VDD = Min., IOH = –4.0 mA VDD = Min., IOL = 8.0 mA Min. 2.4 — 2.2 –0.3 –1 –2 –5 –1 –2 –5 Max. — 0.4 VDD + 0.5 0.8 1 2 5 1 2 5 Unit V V V V µA ILO Output Leakage GND ≤ VOUT ≤ VDD Outputs Disabled µA Note: 1. VIL = –3.0V for pulse width less than 10 ns. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 3 IS61C1024AL, IS64C1024AL ISSI -12 ns Min. Max. Com. Ind. Auto. Com. Ind. Auto. typ.(2) Com. Ind. Auto. Com. Ind. Auto. typ.(2) — — — — — — — 35 40 — 45 50 — 32 1 1.5 — — — — 400 450 — 200 500 2 µA mA 55 45 mA -15 ns Min. Max. Unit mA ® IS61C1024AL/IS64C1024AL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC1 VDD Operating Supply Current VDD Dynamic Operating Supply Current Test Conditions VDD = VDD MAX., CE1 = VIL IOUT = 0 mA, f = 0 VDD = VDD MAX., CE1 = VIL IOUT = 0 mA, f = fMAX ICC2 ISB1 TTL Standby Current (TTL Inputs) VDD = VDD MAX., VIN = VIH or VIL CE1 ≥ VIH, f = 0 or CE2 ≤ VIL, f = 0 VDD = VDD MAX., CE1 ≥ VDD – 0.2V, CE2 ≤ 0.2V VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 ISB2 CMOS Standby Current (CMOS Inputs) Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested. 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 IS61C1024AL, IS64C1024AL READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE1 Access Time CE2 Access Time OE Access Time (2) ISSI -12 Min. Max. 12 — 3 — — — 0 0 2 2 0 0 — — 12 — 12 12 6 — 6 — — 7 — 12 -15 Min. Max. 15 — 3 — — — 0 0 2 2 0 0 — — 15 — 15 15 7 — 6 — — 8 — 12 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ® tRC tAA tOHA tACE1 tACE2 tDOE tLZOE tHZOE(2) tLZCE1 tLZCE2 tHZCE tPU(3) tPD (3) (2) (2) OE to Low-Z Output OE to High-Z Output CE1 to Low-Z Output CE2 to Low-Z Output CE1 or CE2 to High-Z Output CE1 or CE2 to Power-Up CE1 or CE2 to Power-Down (2) Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 3 ns 1.5V See Figures 1 and 2 AC TEST LOADS 480 Ω 5V 5V 480 Ω OUTPUT 30 pF Including jig and scope 255 Ω OUTPUT 5 pF Including jig and scope 255 Ω Figure 1 Figure 2 5 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 IS61C1024AL, IS64C1024AL ISSI ® AC WAVEFORMS READ CYCLE NO. 1(1,2) t RC ADDRESS t AA t OHA DOUT PREVIOUS DATA VALID t OHA DATA VALID READ1.eps READ CYCLE NO. 2(1,3) t RC ADDRESS t AA OE t OHA t DOE CE1 t HZOE t LZOE CE2 t LZCE1 t LZCE2 DOUT HIGH-Z t ACE1 t ACE2 DATA VALID t HZCE1 t HZCE2 CE2_RD2.eps Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 IS61C1024AL, IS64C1024AL ISSI -12 ns Min. Max. 12 10 10 10 0 0 10 7 0 — 2 — — — — — — — — — 7 — -15 ns Min. Max. 15 12 12 12 0 0 12 10 0 — 2 — — — — — — — — — 7 — Unit ns ns ns ns ns ns ns ns ns ns ns ® WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range, Standard and Low Power) Symbol Parameter Write Cycle Time CE1 to Write End CE2 to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time (3) tWC tSCE1 tSCE2 tAW tHA tSA tPWE tSD tHD tHZWE tLZWE (4) (4) WE Pulse Width Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 3. Tested with OE HIGH. 4. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 7 IS61C1024AL, IS64C1024AL AC WAVEFORMS WRITE CYCLE NO. 1 (CE1 Controlled, OE is HIGH or LOW) (1 ) t WC ADDRESS VALID ADDRESS ISSI ® t SA CE1 t SCE1 t SCE2 t HA CE2 WE t AW t PWE1 t PWE2 t HZWE t LZWE HIGH-Z DOUT DATA UNDEFINED t SD DIN t HD DATAIN VALID CE2_WR1.eps WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) (1,2) t WC ADDRESS VALID ADDRESS t HA OE CE1 CE2 WE LOW HIGH t AW t PWE1 t SA t HZWE DATA UNDEFINED HIGH-Z t LZWE DOUT t SD DIN t HD DATAIN VALID CE2_WR2.eps Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH. 8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 IS61C1024AL, IS64C1024AL WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) (1) t WC ADDRESS OE CE1 VALID ADDRESS ISSI ® LOW LOW HIGH t HA CE2 t AW t PWE2 WE t SA DOUT DATA UNDEFINED t HZWE HIGH-Z t LZWE t SD DIN t HD DATAIN VALID CE2_WR3.eps Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 9 IS61C1024AL, IS64C1024AL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter VDD for Data Retention Data Retention Current Test Condition See Data Retention Waveform VDD = 2.0V, CE1 ≥ VDD – 0.2V or CE2 ≤ 0.2V VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V See Data Retention Waveform See Data Retention Waveform Com. Ind. Auto. Min. 2.0 — — — 0 200 — — Typ.(1) ISSI Max. 5.5 400 450 500 — — Unit V µA ® VDR IDR tSDR tRDR Note: Data Retention Setup Time Recovery Time ns ns tRC 1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested. DATA RETENTION WAVEFORM (CE1 Controlled) tSDR VDD 4.5V Data Retention Mode tRDR 2.2V VDR CE1 ≥ VDD - 0.2V CE1 GND DATA RETENTION WAVEFORM (CE2 Controlled) Data Retention Mode VDD 4.5V CE2 2.2V VDR 0.4V GND CE2 ≤ 0.2V tSDR tRDR 10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 IS61C1024AL, IS64C1024AL ISSI Package 300-mil Plastic SOJ TSOP (Type I) ® ORDERING INFORMATION: IS61C1024AL Commercial Range: 0°C to +70°C Speed (ns) 12 Order Part No. IS61C1024AL-12J IS61C1024AL-12T ORDERING INFORMATION: IS61C1024AL Industrial Range: –40°C to +85°C Speed (ns) 12 Order Part No. IS61C1024AL-12JI IS61C1024AL-12JLI IS61C1024AL-12KI IS61C1024AL-12KLI IS61C1024AL-12HI IS61C1024AL-12TI IS61C1024AL-12TLI Package 300-mil Plastic SOJ 300-mil Plastic SOJ, Lead-free 400-mil Plastic SOJ 400-mil Plastic SOJ, Lead-free sTSOP (Type I) TSOP (Type I) TSOP (Type I), Lead-free ORDERING INFORMATION: IS64C1024AL Automotive Range: –40°C to +125°C Speed (ns) 15 Order Part No. IS64C1024AL-15KA3 IS64C1024AL-15TA3 Package 400-mil Plastic SOJ TSOP (Type I) Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 01/24/05 11 PACKAGING INFORMATION Plastic STSOP - 32 pins Package Code: H (Type I) A2 A ISSI A1 ® 1 N E b e D1 D S SEATING PLANE L α C Plastic STSOP (H - Type I) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 32 A — 1.25 — 0.049 A1 0.05 — 0.002 — A2 0.95 1.05 0.037 0.041 b 0.17 0.23 0.007 0.009 C 0.14 0.16 0.0055 0.0063 D 13.20 13.60 0.520 0.535 D1 11.70 11.90 0.461 0.469 E 7.90 8.10 0.311 0.319 e 0.50 BSC 0.020 BSC L 0.30 0.70 0.012 0.028 S 0.28 Typ. 0.011 Typ. α 0° 5° 0° 5° Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. Integrated Silicon Solution, Inc. PK13197H32 Rev. B 04/21/03 PACKAGING INFORMATION 400-mil Plastic SOJ Package Code: K ISSI Notes: 1. Controlling dimension: millimeters. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Reference document: JEDEC MS-027. ® N N/2+1 E1 E 1 N/2 D A SEATING PLANE b C A2 e B A1 E2 Symbol No. Leads A A1 A2 B b C D E E1 E2 e Millimeters Inches Min Max Min Max (N) 28 3.25 3.75 0.128 0.148 0.64 — 0.025 — 2.08 — 0.082 — 0.38 0.51 0.015 0.020 0.66 0.81 0.026 0.032 0.18 0.33 0.007 0.013 18.29 18.54 0.720 0.730 11.05 11.30 0.435 0.445 10.03 10.29 0.395 0.405 9.40 BSC 0.370 BSC 1.27 BSC 0.050 BSC Millimeters Min Max 32 3.25 3.75 0.64 — 2.08 — 0.38 0.51 0.66 0.81 0.18 0.33 20.82 21.08 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 0.820 0.830 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Millimeters Min Max 36 3.25 3.75 0.64 — 2.08 — 0.38 0.51 0.66 0.81 0.18 0.33 23.37 23.62 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 0.920 0.930 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 10/29/03 PACKAGING INFORMATION ISSI Millimeters Min Max 42 3.25 3.75 0.64 — 2.08 — 0.38 0.51 0.66 0.81 0.18 0.33 27.18 27.43 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 1.070 1.080 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Millimeters Min Max 44 3.25 3.75 0.64 — 2.08 — 0.38 0.51 0.66 0.81 0.18 0.33 28.45 28.70 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC 0.128 0.148 0.025 — 0.082 — 0.015 0.020 0.026 0.032 0.007 0.013 1.120 1.130 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Inches Min Max ® Millimeters Inches Symbol Min Max Min Max No. Leads (N) 40 A 3.25 3.75 0.128 0.148 A1 0.64 — 0.025 — A2 2.08 — 0.082 — B 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 C 0.18 0.33 0.007 0.013 D 25.91 26.16 1.020 1.030 E 11.05 11.30 0.435 0.445 E1 10.03 10.29 0.395 0.405 E2 9.40 BSC 0.370 BSC e 1.27 BSC 0.050 BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 10/29/03 PACKAGING INFORMATION 300-mil Plastic SOJ Package Code: J N ISSI ® E1 E 1 D A SEATING PLANE B A2 C e b A1 E2 MILLIMETERS Sym. N0. Leads A A1 A2 b B C D E E1 E2 e — 0.64 2.41 0.41 0.66 0.20 17.02 8.26 7.49 6.27 INCHES Min. Typ. Max. Min. Typ. Max. 24/26 — — — — — — — — — — 3.56 — 2.67 0.51 0.81 0.25 17.27 8.76 7.75 7.29 Notes: 1. Controlling dimension: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. — 0.025 0.095 0.016 0.026 0.008 0.670 0.325 0.295 0.247 — 0.140 — — — — — — — — — — 0.105 0.020 0.032 0.010 0.680 0.345 0.305 0.287 1.27 BSC 0.050 BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 02/25/03 PACKAGING INFORMATION 300-mil Plastic SOJ Package Code: J ISSI ® MILLIMETERS Sym. N0. Leads A A1 A2 b B C D E E1 E2 e — 0.64 2.41 0.41 0.66 0.20 18.29 8.26 7.49 6.27 INCHES Min. Typ. Max. Sym. N0. Leads MILLIMETERS Min. Typ. Max. 32 — 0.64 2.41 0.41 0.66 0.20 20.83 8.26 7.49 6.27 — — — — — — — — — — 3.56 — 2.67 0.51 0.81 0.25 21.08 8.76 7.75 7.29 — INCHES Min. Typ. Max. Min. Typ. Max. 28 — — — — — — — — — — 3.56 — 2.67 0.51 0.81 0.25 18.54 8.76 7.75 7.29 — 0.025 0.095 0.016 0.026 0.008 0.720 0.325 0.295 0.247 — — — — — — — — — — 0.140 — 0.105 0.020 0.032 0.010 0.730 0.345 0.305 0.287 A A1 A2 b B C D E E1 E2 e — — — — — — — — — — 0.140 — 0.105 0.020 0.032 0.010 0.830 0.345 0.305 0.287 0.025 0.095 0.016 0.026 0.008 0.820 0.325 0.295 0.247 1.27 BSC 0.050 BSC 1.27 BSC 0.050 BSC 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 02/25/03 PACKAGING INFORMATION Plastic TSOP-Type I Package Code: T (32-pin) 1 ISSI ® E H N D SEATING PLANE S A e B L A1 α C MILLIMETERS Symbol No. Leads A A1 B C D E H e L α S Min. Max. 32 — 1.20 0.05 0.25 0.17 0.23 0.12 0.17 7.90 8.10 18.30 18.50 19.80 20.20 0.50 BSC 0.40 0.60 0° 8° 0.25 REF INCHES Min. Max. — 0.047 0.002 0.010 0.007 0.009 0.005 0.007 0.311 0.319 0.720 0.728 0.780 0.795 0.020 BSC 0.016 0.024 0° 8° 0.010 REF Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 06/13/03