Pm25LQ512B
Pm25LQ010B
Pm25LQ020B
Pm25LQ040B
512K/1M/2M/4MBIT
3V QUAD SERIAL FLASH MEMORY WITH
MULTI-I/O SPI
DATA SHEET
Pm25LQ512/010/020/040B
512K/1M/2M/4MBIT
3V QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI
FEATURES
Industry Standard Serial Interface
- Pm25LQ040B: 4Mbit/512Kbyte
- Pm25LQ020B: 2Mbit/256Kbyte
- Pm25LQ010B: 1Mbit/128Kbyte
- Pm25LQ512B: 512Kbit/64Kbyte
- 256-bytes per Programmable Page Standard
- Standard SPI/Dual/Quad Multi-I/O SPI
- Supports Serial Flash Discoverable Parameters
(SFDP)
High Performance Serial Flash (SPI)
- 104 MHz SPI/Dual/Quad Multi-I/O SPI
- 416 MHz equivalent Quad SPI
- 52MB/S Continuous Data Throughput
- Supports SPI Modes 0 and 3
- More than 100,000 erase/program cycles
- More than 20-year data retention
Efficient Read and Program modes
- Low Instruction Overhead Operations
- Continuous data read with Byte Wrap around
- Allows XIP operations (execute in place)
- Outperforms X16 Parallel Flash
Low Power with Wide Temp. Ranges
- Single 2.3V to 3.6V Voltage Supply
- 10 mA Active Read Current
- 8 µA Standby Current
- Deep Power Down
- Temp Range:
-40°C to +85°C
Advanced Security Protection
- Software and Hardware Write Protection
- 4x256-Byte dedicated security area with
user-lockable bits, (OTP) One Time
Programmable Memory
- 128 bit Unique ID for each device
Industry Standard Pin-out & Pb-Free Packages1
- S = 8-pin SOIC 150mil
- D = 8-pin TSSOP 150mil
Note1: Pm25LQ040B (not available in D)
Flexible & Cost Efficient Memory Architecture
- Uniform 4 Kbyte Sectors or 32/64 Kbyte Blocks
- Flexible 4, 32, 64 Kbytes, or Chip Erase
- Standard Page Program 1 to 256 bytes
- Program/Erase Suspend and Resume
GENERAL DESCRIPTION
The Pm25LQ512/010/020/040B (512K/1M/2M/4Mbit) Serial Flash memory offers a storage solution with flexibility and
performance in a simplified pin count package. ISSI’s “Industry Standard Serial Interface” is for systems that have
limited space, pins, and power. The device is accessed through a 4-wire SPI Interface consisting of a Serial Data
Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which also serve as multifunction I/O pins in Dual and Quad modes (see pin descriptions). The Pm25xQ series of Flash is ideal for code
shadowing to RAM, execute in place (XIP) operations, and storing non-volatile data.
The memory array is organized into programmable pages of 256-bytes each. The device supports page program
mode where 1 to 256 bytes of data can be programmed into the memory with one command. Pages can be erased in
groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sectors and blocks
allow greater flexibility for a variety of applications requiring solid data retention.
The device supports the standard Serial Peripheral Interface (SPI), Dual/Quad output (SPI), and Dual/Quad I/O (SPI).
Clock frequencies of up to 104MHz for all read modes allow for equivalent clock rates of up to 416MHz (104MHz x 4)
which equates to 52Mbytes/S of throughput. These transfer rates can outperform 16-bit Parallel Flash memories
allowing for efficient memory access for a XIP (execute in place) operation. The device is manufactured using
industry leading non-volatile memory technology and offered in industry standard lead-free packages. See Ordering
Information for the density and package combinations available.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
2
Pm25LQ512/010/020/040B
TABLE OF CONTENTS
FEATURES .......................................................................................................................................................... 2
GENERAL DESCRIPTION .................................................................................................................................. 2
TABLE OF CONTENTS ....................................................................................................................................... 3
1.
PIN CONFIGURATION ................................................................................................................................ 5
2.
PIN DESCRIPTIONS ................................................................................................................................... 6
3.
BLOCK DIAGRAM ....................................................................................................................................... 7
4.
SPI MODES DESCRIPTION ........................................................................................................................ 8
5.
SYSTEM CONFIGURATION ..................................................................................................................... 10
5.1 BLOCK/SECTOR ADDRESSES .......................................................................................................... 10
6.
REGISTERS ............................................................................................................................................... 12
6.1. STATUS REGISTER ........................................................................................................................... 12
6.2. FUNCTION REGISTER ....................................................................................................................... 15
7.
PROTECTION MODE ................................................................................................................................ 16
7.1 HARDWARE WRITE PROTECTION.................................................................................................... 16
7.2 SOFTWARE WRITE PROTECTION .................................................................................................... 16
8.
DEVICE OPERATION ................................................................................................................................ 17
8.1 READ DATA OPERATION (RD, 03h) .................................................................................................. 18
8.2 FAST READ DATA OPERATION (FR, 0Bh) ........................................................................................ 20
8.3 HOLD OPERATION .............................................................................................................................. 21
8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh) ........................................................................... 21
8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh) .................................................................. 24
8.6 FAST READ QUAD OUTPUT (FRQO, 6Bh) ........................................................................................ 26
8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh) .......................................................................... 28
8.8 PAGE PROGRAM OPERATION (PP, 02h) .......................................................................................... 30
8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h) ........................................................ 31
8.10 ERASE OPERATION ......................................................................................................................... 32
8.11 SECTOR ERASE OPERATION (SER, D7h/20h) ............................................................................... 32
8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h) ............................................................ 33
8.13 CHIP ERASE OPERATION (CER, C7h/60h) ..................................................................................... 34
8.14 WRITE ENABLE OPERATION (WREN, 06h) .................................................................................... 35
8.15 WRITE DISABLE OPERATION (WRDI, 04h) ..................................................................................... 35
8.16 READ STATUS REGISTER OPERATION (RDSR, 05h) ................................................................... 36
8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h) ................................................................. 36
8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h) ............................................................... 37
8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)............................................................. 37
8.20 PROGRAM/ERASE SUSPEND & RESUME ...................................................................................... 38
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
3
Pm25LQ512/010/020/040B
8.21 DEEP POWER DOWN (DP, B9h) ...................................................................................................... 40
8.22 RELEASE DEEP POWER DOWN (RDPD, ABh) ............................................................................... 41
8.23 READ PRODUCT IDENTIFICATION (RDID, ABh) ............................................................................ 42
8.24 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh) ........................... 44
8.25 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h) ........................ 45
8.26 READ UNIQUE ID NUMBER (RDUID, 4Bh) ...................................................................................... 46
8.27 READ SFDP OPERATION (RDSFDP, 5Ah) ...................................................................................... 47
8.28 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h) ............................ 48
8.29 SECURITY INFORMATION ROW (OTP AREA) ................................................................................ 49
8.30 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) ............................................................. 49
8.31 INFORMATION ROW READ OPERATION (IRRD, 68h) ................................................................... 51
8.32 SECTOR LOCK/UNLOCK FUNCTIONS ............................................................................................ 52
9.
ELECTRICAL CHARACTERISTICS .......................................................................................................... 54
9.1 ABSOLUTE MAXIMUM RATINGS (1) ................................................................................................... 54
9.2 OPERATING RANGE ........................................................................................................................... 54
9.3 DC CHARACTERISTICS ...................................................................................................................... 54
9.4 AC MEASUREMENT CONDITIONS .................................................................................................... 55
9.5 AC CHARACTERISTICS ...................................................................................................................... 56
9.6 SERIAL INPUT/OUTPUT TIMING ........................................................................................................ 57
9.7 POWER-UP AND POWER-DOWN ...................................................................................................... 58
9.8 PROGRAM/ERASE PERFORMANCE ................................................................................................. 59
9.9 RELIABILITY CHARACTERISTICS ..................................................................................................... 59
10. PACKAGE TYPE INFORMATION ............................................................................................................. 60
10.1 8-Pin JEDEC 150mil Broad Small Outline Integrated Circuit (SOIC) Package (S) ............................ 60
10.2 8-Pin 150mil TSSOP Package (D)...................................................................................................... 61
11. ORDERING INFORMATION ...................................................................................................................... 62
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
4
Pm25LQ512/010/020/040B
1. PIN CONFIGURATION
CE#
1
8
Vcc
SO (IO1)
2
7
HOLD# (IO3)
WP# (IO2)
3
6
SCK
GND
4
5
SI (IO0)
8-pin SOIC 150mil (Package: S)
8-pin TSSOP 150mil (Package: D)
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
5
Pm25LQ512/010/020/040B
2. PIN DESCRIPTIONS
SYMBOL
TYPE
DESCRIPTION
Chip Enable: The Chip Enable (CE#) pin enables and disables the devices
operation. When CE# is high the device is deselected and output pins are in a high
impedance state. When deselected the devices non-critical internal circuitry power
down to allow minimal levels of power consumption while in a standby state.
CE#
INPUT
When CE# is pulled low the device will be selected and brought out of standby
mode. The device is considered active and instructions can be written to, data read,
and written to the device. After power-up, CE# must transition from high to low
before a new instruction will be accepted.
Keeping CE# in a high state deselects the device and switches it into its low power
state. Data will not be accepted when CE# is high.
Serial Data Input, Serial Output, and IOs (SI, SO, IO0, and IO1):
SI (IO0),
SO (IO1)
INPUT/OUTPUT
This device supports standard SPI, Dual SPI, and Quad SPI operation. Standard SPI
instructions use the unidirectional SI (Serial Input) pin to write instructions,
addresses, or data to the device on the rising edge of the Serial Clock (SCK).
Standard SPI also uses the unidirectional SO (Serial Output) to read data or status
from the device on the falling edge of the serial clock (SCK).
In Dual and Quad SPI mode, SI and SO become bidirectional IO pins to write
instructions, addresses or data to the device on the rising edge of the Serial Clock
(SCK) and read data or status from the device on the falling edge of SCK. Quad SPI
instructions use the WP# and HOLD# pins as IO2 and IO3 respectively.
WP# (IO2)
INPUT/OUTPUT
Write Protect/Serial Data IO (IO2): The WP# pin protects the Status Register from
being written in conjunction with the SRWD bit. When the SRWD is set to “1” and the
WP# is pulled low, the Status Register bits (SRWD, QE, BP3, BP2, BP1, BP0) are
write-protected and vice-versa for WP# high. When the SRWD is set to “0”, the
Status Register is not write-protected regardless of WP# state.
When the QE bit is set to “1”, the WP# pin (Write Protect) function is not available
since this pin is used for IO2.
Hold/Serial Data IO (IO3): Pauses serial communication by the master device
without resetting the serial sequence. When the QE bit of Status Register is set to
“1”, HOLD# pin is not available since it becomes IO3.
HOLD# (IO3)
INPUT/OUTPUT
The HOLD# pin allows the device to be paused while it is selected. The HOLD# pin
is active low. When HOLD# is in a low state, and CE# is low, the SO pin will be at
high impedance.
Device operation can resume when HOLD# pin is brought to a high state. When the
QE bit of Status Register is set for Quad I/O, the HOLD# pin function is not available
and becomes IO3 for Multi-I/O SPI mode.
SCK
INPUT
Vcc
POWER
GND
GROUND
NC
Unused
Serial Data Clock: Synchronized Clock for input and output timing operations.
Power: Device Core Power Supply
Ground: Connect to ground when referenced to Vcc
NC: Pins labeled “NC” stand for “No Connect” and should be left uncommitted.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
6
Pm25LQ512/010/020/040B
3. BLOCK DIAGRAM
Control Logic
High Voltage Generator
Status
Register
I/O Buffers and
Data Latches
256 Bytes
Page Buffer
SCK
WP#
(IO2)
SI
(IO0)
SO
(IO1)
Serial Peripheral Interface
CE#
X-Decoder
HOLD#
(IO3)
Y-Decoder
Memory Array
Address Latch &
Counter
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
7
Pm25LQ512/010/020/040B
4. SPI MODES DESCRIPTION
Multiple Pm25LQ512/010/020/040B devices can be connected on the SPI serial bus and controlled by a SPI
Master, i.e. microcontroller, as shown in Figure 4.1 the devices support either of two SPI modes:
Mode 0 (0, 0)
Mode 3 (1, 1)
The difference between these two modes is the clock polarity. When the SPI master is in stand-by mode, the
serial clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer
to Figure 4.2 for SPI mode. In SPI mode, the input data is latched on the rising edge of Serial Clock (SCK), and
the output data is available from the falling edge of SCK.
Figure 4.1 Connection Diagram among SPI Master and SPI Slaves (Memory Devices)
SDO
SPI interface with
(0,0) or (1,1)
SDI
SCK
SCK SO
SI
SCK SO
SI
SCK SO
SI
SPI Master
(i.e. Microcontroller)
CS3
CS2
SPI
Memory
Device
CS1
CE#
SPI
Memory
Device
CE#
WP# HOLD#
SPI
Memory
Device
CE#
WP# HOLD#
WP# HOLD#
Notes:
1. The Write Protect (WP#) and Hold (HOLD#) signals should be driven high or low as necessary.
2. SI and SO pins become bidirectional IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3 respectively
during Multi-IO mode.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
8
Pm25LQ512/010/020/040B
Figure 4.2 SPI Mode Support
SCK
Mode 0 (0,0)
SCK
Mode 3 (1,1)
MSB
SI
Input
mode
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
MSB
9
Pm25LQ512/010/020/040B
5. SYSTEM CONFIGURATION
The Pm25LQ512/010/020/040B is designed to interface directly with the synchronous Serial Peripheral Interface
(SPI) microcontrollers or any SPI interface-equipped system controllers.
The memory array of Pm25LQ512B is divided into uniform 4 Kbyte sectors or uniform 32 Kbyte blocks (a block
consists of eight adjacent sectors). The memory array of Pm25LQ010/020/040B is divided into uniform 4 Kbyte
sectors or uniform 32/64 Kbyte blocks (a block consists of eight/sixteen adjacent sectors respectively).
Table 5.1 and Table 5.2 illustrate the memory map of the device. The Status Register controls how the memory
is protected.
5.1 BLOCK/SECTOR ADDRESSES
Table 5.1 Block/Sector Addresses of Pm25LQ512B
Memory
Density
Block No.
(32Kbyte)
Block 0
512Kb
Block 1
Sector 0
Sector Size
(Kbyte)
4
000000h - 000FFFh
Sector 1
4
001000h - 001FFFh
:
:
:
Sector 7
4
007000h - 007FFFh
Sector 8
4
008000h - 008FFFh
Sector 9
4
009000h - 009FFFh
:
:
:
Sector 15
4
00F000h - 00FFFFh
Sector No.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Address Range
10
Pm25LQ512/010/020/040B
Table 5.2 Block/Sector Addresses of Pm25LQ010/020/040B
Memory Density
Block No.
(64Kbyte)
Block No.
(32Kbyte)
Sector No.
Sector Size
(Kbyte)
Address Range
Block 0
Sector 0
4
000000h - 000FFFh
:
:
:
:
:
:
Sector 15
4
00F000h - 00FFFFh
Sector 16
4
010000h - 010FFFh
:
:
:
:
:
:
Sector 31
4
01F000h - 01FFFFh
Sector 32
4
020000h - 020FFFh
:
:
:
:
:
:
Sector 47
4
02F000h - 02FFFFh
Sector 48
4
030000h - 030FFFh
:
:
:
Block 0
Block 1
1 Mb
Block 2
Block 1
Block 3
2 Mb
Block 4
Block 2
Block 5
Block 6
Block 3
Block 7
4 Mb
Block 8
Block 4
Block 9
Block 10
Block 5
Block 11
Block 12
Block 6
Block 13
Block 14
Block 7
Block 15
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
:
:
:
Sector 63
4
03F000h - 03FFFFh
Sector 64
4
040000h - 040FFFh
:
:
:
:
:
:
Sector 79
4
04F000h - 04FFFFh
Sector 80
4
050000h - 050FFFh
:
:
:
:
:
:
Sector 95
4
05F000h - 05FFFFh
Sector 96
4
060000h - 060FFFh
:
:
:
:
:
:
Sector 111
4
06F000h - 06FFFFh
Sector 112
4
070000h - 070FFFh
:
:
:
:
:
:
Sector 127
4
07F000h - 07FFFFh
11
Pm25LQ512/010/020/040B
6. REGISTERS
The Pm25LQ512/010/020/040B has two sets of Registers: Status, Function.
6.1. STATUS REGISTER
Status Register Format and Status Register Bit Definitions are described in Tables 6.1 & 6.2.
Table 6.1 Status Register Format
Default
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
SRWD
QE
BP3
BP2
BP1
BP0
WEL
WIP
0
0
0
0
0
0
0
0
Table 6.2 Status Register Bit Definition
Bit
Name
Bit 0
WIP
Bit 1
WEL
Bit 2
BP0
Bit 3
BP1
Bit 4
BP2
Bit 5
BP3
Bit 6
QE
Bit 7
SRWD
Definition
Write In Progress Bit:
"0" indicates the device is ready (default)
"1" indicates a write cycle is in progress and the device is busy
Write Enable Latch:
"0" indicates the device is not write enabled (default)
"1" indicates the device is write enabled
Block Protection Bit: (See Tables 6.4 for details)
"0" indicates the specific blocks are not write-protected (default)
"1" indicates the specific blocks are write-protected
Quad Enable bit:
“0” indicates the Quad output function disable (default)
“1” indicates the Quad output function enable
Status Register Write Disable: (See Table 7.1 for details)
"0" indicates the Status Register is not write-protected (default)
"1" indicates the Status Register is write-protected
Read/Write
Type
R
Volatile
R/W1
Volatile
R/W
Non-Volatile
R/W
Non-Volatile
R/W
Non-Volatile
Note1: WEL bit can be written by WREN and WRDI commands, but cannot by WRSR command.
The BP0, BP1, BP2, BP3, QE, and SRWD are non-volatile memory cells that can be written by a Write Status
Register (WRSR) instruction. The default value of the BP0, BP1, BP2, BP3, QE, and SRWD bits were set to “0”
at factory. The Status Register can be read by the Read Status Register (RDSR).
The function of Status Register bits are described as follows:
WIP bit: The Write In Progress (WIP) bit is read-only, and can be used to detect the progress or completion of a
program or erase operation. When the WIP bit is “0”, the device is ready for write Status or Function Register,
program or erase operation. When the WIP bit is “1”, the device is busy.
WEL bit: The Write Enable Latch (WEL) bit indicates the status of the internal write enable latch. When the
WEL is “0”, the write enable latch is disabled and all write operations described in Table 6.3 are inhibited. When
the WEL bit is “1”, write operations are allowed. The WEL bit is set by a Write Enable (WREN) instruction. Each
write register, program and erase instruction must be preceded by a WREN instruction. The WEL bit can be
reset by a Write Disable (WRDI) instruction. It will automatically be reset after the completion of any write
operation.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
12
Pm25LQ512/010/020/040B
Table 6.3 Instructions requiring WREN instruction ahead
Instructions must be preceded by the WREN instruction
Name
PP
Hex Code
Operation
02h
Serial Input Page Program
PPQ
32h/38h
Quad Input Page Program
SER
D7h/20h
Sector Erase 4KB
BER32 (32Kbyte)
52h
Block Erase 32KB
BER64 (64Kbyte)
D8h
Block Erase 64KB
BER32 (32Kbyte)
52h/D8h
Block Erase 32KB
BER64 (64Kbyte)
NA
Block Erase 64KB
CER
C7h/60h
Pm25LQ010/020/040B
Pm25LQ512B
Chip Erase
WRSR
01h
Write Status Register
WRFR
42h
Write Function Register
IRP
62h
Program Information Row
BP3, BP2, BP1, BP0 bits: The Block Protection (BP3, BP2, BP1 and BP0) bits are used to define the portion of
the memory area to be protected. Refer to Tables 6.4 for the Block Write Protection (BP) bit settings. When a
defined combination of BP3, BP2, BP1 and BP0 bits are set, the corresponding memory area is protected. Any
program or erase operation to that area will be inhibited.
Note: A Chip Erase (CER) instruction will be ignored unless all the Block Protection Bits are “0”s.
SRWD bit: The Status Register Write Disable (SRWD) bit operates in conjunction with the Write Protection
(WP#) signal to provide a Hardware Protection Mode. When the SRWD is set to “0”, the Status Register is not
write-protected. When the SRWD is set to “1” and the WP# is pulled low (VIL), the bits of Status Register
(SRWD, QE, BP3, BP2, BP1, BP0) become read-only, and a WRSR instruction will be ignored. If the SRWD is
set to “1” and WP# is pulled high (VIH), the Status Register can be changed by a WRSR instruction.
QE bit: The Quad Enable (QE) is a non-volatile bit in the Status Register that allows quad operation. When the
QE bit is set to “0”, the pin WP# and HOLD# are enabled. When the QE bit is set to “1”, the IO2 and IO3 pins
are enabled.
WARNING: The QE bit must be set to 0 if WP# or HOLD# pin is tied directly to the power supply.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
13
Pm25LQ512/010/020/040B
Table 6.4 Block (64Kbyte) assignment by Block Write Protect (BP) Bits.
Status Register Bits
Protected Memory Area
BP3
BP2
BP1
BP0
4Mb
2Mb
1Mb
512Kb
0
0
0
0
None
None
None
None
0
0
0
1
1 block : 7
1 block : 3
1 block : 1
0
0
1
0
2 blocks : 6 - 7
2 blocks : 2 - 3
0
0
1
1
4 blocks : 4 - 7
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
4 blocks 0 - 3
1
1
0
1
2 blocks : 0 - 1
2 blocks : 0 - 1
1
1
1
0
1 block : 0
1 block : 0
1 block : 0
1
1
1
1
None
None
None
All Blocks
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
All Blocks
All Blocks
All Blocks
None
14
Pm25LQ512/010/020/040B
6.2. FUNCTION REGISTER
Function Register Format and Bit definition are described in Table 6.5 and 6.6.
Table 6.5 Function Register Format
Default
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
IRL3
IRL2
IRL1
IRL0
ESUS
PSUS
Reserved
Reserved
0
0
0
0
0
0
0
0
Table 6.6 Function Register Bit Definition
Bit
Name
Definition
Bit 0
Reserved
Reserved
Bit 1
Reserved
Bit 2
PSUS
Bit 3
ESUS
Bit 4
IR Lock 0
Bit 5
IR Lock 1
Bit 6
IR Lock 2
Bit 7
IR Lock 3
Reserved
Program suspend bit:
“0” indicates program is not suspend
“1” indicates program is suspend
Erase suspend bit:
"0" indicates Erase is not suspend
"1" indicates Erase is suspend
Lock the Information Row 0:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 1:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 2:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Lock the Information Row 3:
“0” indicates the Information Row can be programmed
“1” indicates the Information Row cannot be programmed
Read/Write
R
Reserved
R
Reserved
R
Volatile
R
Volatile
R/W
Non-Volatile
R/W
Non-Volatile
R/W
Non-Volatile
R/W
Non-Volatile
Type
Note: Function Register bits are only One Time Programmable (OTP) and cannot be modified.
PSUS bit: The Program Suspend Status bit indicates when a Program operation has been suspended. The
PSUS changes to “1” after a suspend command is issued during the program operation. Once the suspended
Program resumes, the PSUS bit is reset to “0”.
ESUS bit: The Erase Suspend Status indicates when an Erase operation has been suspended. The ESUS bit is
“1” after a suspend command is issued during an Erase operation. Once the suspended Erase resumes, the
ESUS bit is reset to “0”.
IR Lock bit 0 ~ 3: The Information Row Lock bits are programmable. If the bit set to “1”, the Information Row
can’t be programmed.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
15
Pm25LQ512/010/020/040B
7. PROTECTION MODE
The Pm25LQ512/010/020/040B supports hardware and software write-protection mechanisms.
7.1 HARDWARE WRITE PROTECTION
The Write Protection (WP#) pin provides a hardware write protection method for BP3, BP2, BP1, BP0 and
SRWD in the Status Register. Refer to the section 6.1 STATUS REGISTER.
Write inhibit voltage (VWI) is specified in the section 9.7 POWER-UP AND POWER-DOWN. All write sequence
will be ignored when Vcc drops to VWI.
Table 7.1 Hardware Write Protection on Status Register
SRWD
WP#
Status Register
0
Low
Writable
1
Low
Protected
0
High
Writable
1
High
Writable
Note: Before the execution of any program, erase or write Status/Function Register instruction, the Write Enable
Latch (WEL) bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not
enabled, the program, erase or write register instruction will be ignored.
7.2 SOFTWARE WRITE PROTECTION
The Pm25LQ512/010/020/040B also provides a software write protection feature. The Block Protection (BP3,
BP2, BP1, and BP0) bits allow part or the whole memory area to be write-protected.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
16
Pm25LQ512/010/020/040B
8. DEVICE OPERATION
The Pm25LQ512/010/020/040B utilizes an 8-bit instruction register. Refer to Table 8.1. Instruction Set for details
on Instructions and Instruction Codes. All instructions, addresses, and data are shifted in with the most
significant bit (MSB) first on Serial Data Input (SI) or Serial Data IOs (IO0, IO1, IO2, IO3). The input data on SI
or IOs is latched on the rising edge of Serial Clock (SCK) after Chip Enable (CE#) is driven low (VIL). Every
instruction sequence starts with a one-byte instruction code and is followed by address bytes, data bytes, or
both address bytes and data bytes, depending on the type of instruction. CE# must be driven high (VIH) after the
last bit of the instruction sequence has been shifted in to end the operation.
Table 8.1 Instruction Set
Instruction Name
Hex Code
Operation
RD
03h
Read Data Bytes from Memory at Normal Read Mode
SPI
Maximum
Frequency
33MHz
FR
0Bh
Read Data Bytes from Memory at Fast Read Mode
SPI
104MHz
FRDIO
BBh
Fast Read Dual I/O
SPI
104MHz
FRDO
3Bh
Fast Read Dual Output
SPI
104MHz
FRQIO
EBh
Fast Read Quad I/O
SPI
104MHz
FRQO
6Bh
Fast Read Quad Output
SPI
104MHz
PP
02h
Page Program Data Bytes into Memory
SPI
104MHz
PPQ
32h/38h
Page Program Data Bytes into Memory with Quad Interface
SPI
104MHz
SER
D7h/20h
Sector Erase 4KB
SPI
104MHz
BER32 (32Kbyte)
52h
Block Erase 32KB
SPI
104MHz
BER64 (64Kbyte)
D8h
Block Erase 64KB
SPI
104MHz
BER32 (32Kbyte)
52h/D8h
Block Erase 32KB
SPI
104MHz
BER64 (64Kbyte)
NA
Block Erase 64KB
SPI
104MHz
CER
C7h/60h
Chip Erase
SPI
104MHz
WREN
06h
Write Enable
SPI
104MHz
WRDI
04h
Write Disable
SPI
104MHz
RDSR
05h
Read Status Register
SPI
104MHz
WRSR
01h
Write Status Register
SPI
104MHz
RDFR
48h
Read Function Register
SPI
104MHz
WRFR
42h
Write Function Register
SPI
104MHz
PERSUS
75h/B0h
Suspend during the Program/Erase
SPI
104MHz
PERRSM
7Ah/30h
Resume Program/Erase
SPI
104MHz
DP
B9h
Deep Power Down Mode
SPI
104MHz
RDID, RDPD
ABh
Read Manufacturer and Product ID/Release Deep Power Down
SPI
104MHz
RDUID
4Bh
Read Unique ID Number
SPI
104MHz
RDJDID
9Fh
Read Manufacturer and Product ID by JEDEC ID Command
SPI
104MHz
RDMDID
90h
Read Manufacturer and Device ID
SPI
104MHz
RDSFDP
5Ah
SFDP Read
SPI
104MHz
RSTEN
66h
Software Reset Enable
SPI
104MHz
RST
99h
Reset
SPI
104MHz
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Mode
Pm25LQ010/020/040B
Pm25LQ512B
17
Pm25LQ512/010/020/040B
Instruction Name
Hex Code
Operation
IRP
62h
Program Information Row
SPI
Maximum
Frequency
104MHz
IRRD
68h
Read Information Row
SPI
104MHz
SECUNLOCK
26h
Sector Unlock
SPI
104MHz
SECLOCK
24h
Sector Lock
SPI
104MHz
Mode
8.1 READ DATA OPERATION (RD, 03h)
The Read Data (RD) instruction is used to read memory contents of the Pm25LQ512/010/020/040B at a
maximum frequency of 33MHz.
The RD instruction code is transmitted via the Sl line, followed by three address bytes (A23 - A0) of the first
memory location to be read. A total of 24 address bits are shifted in, but only AMSB (Most Significant Bit) - A0 are
decoded. The remaining bits (A23 – AMSB+1) are ignored. The first byte address can be at any memory location.
Upon completion, any data on the Sl will be ignored. Refer to Table 8.2 for the related Address Key.
The first byte data (D7 - D0) address is shifted out on the SO line, MSB first. A single byte of data, or up to the
whole memory array, can be read out in one READ instruction. The address is automatically incremented after
each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH)
after the data comes out. When the highest address of the device is reached, the address counter will roll over
to the 000000h address, allowing the entire memory to be read in one continuous READ instruction.
If a Read Data instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction
is ignored and will not have any effects on the current cycle.
Table 8.2 Address Key
Address
AMSB–A0
Pm25LQ040B
A18-A0
(A23-A19=X)
Pm25LQ020B
A17-A0
(A23-A18=X)
Pm25LQ010B
A16-A0
(A23-A17=X)
Pm25LQ512B
A15-A0
(A23-A16=X)
Note: X=Don’t Care
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
18
Pm25LQ512/010/020/040B
Figure 8.1 Read Data Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
SCK
Mode 0
3-byte Address
SI
Instruction = 03h
23
22
41
42
21
...
3
2
1
0
44
45
46
47
48
High Impedance
SO
CE #
32
33
34
35
36
37
38
39
40
43
SCK
SI
Data Out 2
Data Out 1
SO
tV
7
6
5
4
3
2
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
1
0
7
6
5
4
3
2
1
0
19
Pm25LQ512/010/020/040B
8.2 FAST READ DATA OPERATION (FR, 0Bh)
The Fast Read instruction is used to read memory data at up to a 104MHZ clock.
The Fast Read instruction code is followed by three address bytes (A23 - A0) and a dummy byte (8 clocks),
transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte from
the address is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling
edge of SCK.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single Fast Read instruction. The Fast Read
instruction is terminated by driving CE# high (VIH).
If a Fast Read instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction
is ignored and will not have any effects on the current cycle.
Figure 8.2 Fast Read Data Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
SCK
Mode 0
3-byte Address
SI
Instruction = 0Bh
23
22
41
42
21
...
3
2
1
0
44
45
46
47
48
High Impedance
SO
CE #
32
33
34
35
36
37
38
39
40
43
SCK
SI
Dummy Byte
Data Out
tV
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
7
6
5
4
3
2
1
0
...
20
Pm25LQ512/010/020/040B
8.3 HOLD OPERATION
HOLD# is used in conjunction with CE# to select the Pm25LQ512/010/020/040B. When the device is selected
and a serial sequence is underway, HOLD# can be used to pause the serial communication with the master
device without resetting the serial sequence. To pause, HOLD# is brought low while the SCK signal is low. To
resume serial communication, HOLD# is brought high while the SCK signal is low (SCK may still toggle during
HOLD). Inputs to SI will be ignored while SO is in the high impedance state, during HOLD.
Timing graph can be referenced in AC Parameters Figure 9.3.
8.4 FAST READ DUAL I/O OPERATION (FRDIO, BBh)
The FRDIO instruction allows the address bits to be input two bits at a time. This may allow for code to be
executed directly from the SPI in some applications.
The FRDIO instruction code is followed by three address bytes (A23 – A0) and a mode byte, transmitted via the
IO1 and IO0 lines, with each pair of bits latched-in during the rising edge of SCK. The address MSB is input on
IO1, the next bit on IO0, and continue to shift in alternating on the two lines. If AXh (where X is don’t care) is
input for the mode byte, the device will enter AX read mode. In the AX read mode, the next instruction expected
from the device will be another FRDIO instruction and will not need the BBh instruction code so that it saves
cycles as described in Figure 8.4. If the following mode byte is not set to AXh, the device will exit AX read mode.
To avoid any I/O contention problem, X should be Hi-Z.
Once address and mode byte are input the device will read out data at the specified address. The first data byte
addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency fCT,
during the falling edge of SCK. The first bit (MSB) is output on IO1, while simultaneously the second bit is output
on IO0. Figure 8.3 illustrates the timing sequence.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRDIO instruction. FRDIO instruction is
terminated by driving CE# high (VIH).
If a FRDIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
21
Pm25LQ512/010/020/040B
Figure 8.3 Fast Read Dual I/O Sequence (with command decode cycles)
CE #
Mode 3
0
1
2
3
4
5
7
6
8
9
10
...
18
19
20
21
SCK
Mode 0
Mode Bits
3-byte Address
IO0
Instruction = BBh
22
20
18
...
2
0
6
4
23
21
19
...
3
1
7
5
34
35
36
37
38
High Impedance
IO1
CE #
22
23
24
25
26
27
29
28
30
31
32
33
SCK
tV
IO0
2
0
6
4
2
0
6
Data Out 1
IO1
3
1
7
5
3
4
2
0
6
Data Out 2
1
7
5
3
4
2
0
...
...
...
1
...
...
...
Data Out 3
1
7
5
3
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). Anything but
AXh in the mode byte cycle will keep the same sequence.
2. To avoid I/O contention, X should be Hi-Z.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
22
Pm25LQ512/010/020/040B
Figure 8.4 Fast Read Dual I/O Sequence (without command decode cycles)
CE #
Mode 3
0
1
2
3
...
11
12
13
14
15
16
17
18
19
20
22
21
SCK
Mode 0
Mode Bits
3-byte Address
tV
Data Out 2
Data Out 1
IO0
22
20
18
...
2
0
6
4
2
0
6
4
2
0
6
4
...
IO1
23
21
19
...
3
1
7
5
3
1
7
5
3
1
7
5
...
Notes:
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When
the mode bits are different from AXh, the device will exit the AX read operation.
2. To avoid I/O contention, X should be Hi-Z.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
23
Pm25LQ512/010/020/040B
8.5 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh)
The FRDO instruction is used to read memory data on two output pins each at up to a 104MHZ clock.
The FRDO instruction code is followed by three address bytes (A23 – A0) and a dummy byte (8 clocks),
transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte
addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum frequency fCT,
during the falling edge of SCK. The first bit (MSB) is output on IO1. Simultaneously the second bit is output on
IO0.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRDO instruction. FRDO instruction is
terminated by driving CE# high (VIH).
If a FRDO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
24
Pm25LQ512/010/020/040B
Figure 8.5 Fast Read Dual-Output Sequence
CE #
Mode 3
0
1
2
3
4
5
7
6
8
9
10
11
28
29
30
31
SCK
Mode 0
3-byte Address
IO0
Instruction = 3Bh
23
22
21
...
3
2
1
0
44
45
46
47
48
High Impedance
IO1
CE #
32
33
34
35
36
37
38
39
40
41
42
43
SCK
tV
IO0
6
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
2
0
6
Data Out 1
8 Dummy Cycles
IO1
4
7
5
3
4
2
0
...
1
...
Data Out 2
1
7
5
3
25
Pm25LQ512/010/020/040B
8.6 FAST READ QUAD OUTPUT (FRQO, 6Bh)
The FRQO instruction is used to read memory data on four output pins each at up to a 104 MHz clock.
The FRQO instruction code is followed by three address bytes (A23 – A0) and a dummy byte (8 clocks),
transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK. Then the first data byte
addressed is shifted out on the IO3, IO2, IO1, and IO0 lines, with each group of four bits shifted out at a
maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while
simultaneously the second bit is output on IO2, the third bit is output on IO1, etc.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRQO instruction. FRQO instruction is
terminated by driving CE# high (VIH).
If a FRQO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
26
Pm25LQ512/010/020/040B
Figure 8.6 Fast Read Quad-Output Sequence
CE #
Mode 3
0
1
2
3
4
5
7
6
8
9
10
11
28
29
30
31
SCK
Mode 0
3-byte Address
IO0
Instruction = 6Bh
23
22
21
...
3
2
1
0
44
45
46
47
48
High Impedance
IO1
High Impedance
IO2
High Impedance
IO3
CE #
32
33
34
35
36
37
38
39
40
41
42
43
SCK
tV
IO0
4
8 Dummy Cycles
0
4
0
4
0
4
0
...
Data Out 1 Data Out 2 Data Out 3 Data Out 4
IO1
5
1
5
1
5
1
5
1
...
IO2
6
2
6
2
6
2
6
2
...
IO3
7
3
7
3
7
3
7
3
...
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
27
Pm25LQ512/010/020/040B
8.7 FAST READ QUAD I/O OPERATION (FRQIO, EBh)
The FRQIO instruction allows the address bits to be input four bits at a time. This may allow for code to be
executed directly from the SPI in some applications.
The FRQIO instruction code is followed by three address bytes (A23 – A0), a mode byte, and 4 dummy cycles,
transmitted via the IO3, IO2, IO0 and IO1 lines, with each group of four bits latched-in during the rising edge of
SCK. The address of MSB inputs on IO3, the next bit on IO2, the next bit on IO1, the next bit on IO0, and
continue to shift in alternating on the four. The mode byte contains the value AXh (where X is don’t care). After
four dummy clocks, the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each
group of four bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is
output on IO3, while simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. Figure 8.7
illustrates the timing sequence.
If the mode byte is AXh, the AX read mode is enabled. In the mode, the device expects that the next operation
will be another FRQIO and subsequent FRQIO execution skips command code. It saves command cycles as
described in Figure 8.8. The device will remain in this mode until the mode byte is different from AXh.
The first byte addressed can be at any memory location. The address is automatically incremented after each
byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single FRQIO instruction. FRQIO instruction is
terminated by driving CE# high (VIH).
If a FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
28
Pm25LQ512/010/020/040B
Figure 8.7 Fast Read Quad I/O Sequence (with command decode cycles)
CE #
Mode 3
0
1
2
3
4
5
7
6
8
9
10
11
12
13
14
15
SCK
Mode 0
3-byte Address
IO0
Mode Bits
20
16
12
8
4
0
4
0
21
17
13
9
5
1
5
1
IO2
22
18
14
10
6
2
6
2
IO3
23
19
15
11
7
3
7
3
28
29
30
31
32
Instruction = EBh
High Impedance
IO1
CE #
16
17
18
19
20
21
23
22
24
25
26
27
SCK
4 Dummy Cycles
tV Data Out 1 Data Out 2 Data Out 3 Data Out 4 Data Out 5 Data Out 6
IO0
4
0
4
0
4
0
4
0
4
0
4
0
...
IO1
5
1
5
1
5
1
5
1
5
1
5
1
...
6
2
6
2
6
2
6
2
6
2
6
2
...
7
3
7
3
7
3
7
3
7
3
7
3
...
IO2
IO3
Note: If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). Anything
but AXh in the mode byte cycle will keep the same sequence.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
29
Pm25LQ512/010/020/040B
8.8 PAGE PROGRAM OPERATION (PP, 02h)
The Page Program (PP) instruction allows up to 256 bytes data to be programmed into memory in a single
operation. The destination of the memory to be programmed must be outside the protected memory area set by
the Block Protection (BP2, BP1, BP0) bits. The PP instruction which attempts to program into a page that is
write-protected will be ignored. Before the execution of PP instruction, the Write Enable Latch (WEL) must be
enabled through a Write Enable (WREN) instruction.
The PP instruction code, three address bytes and program data (1 to 256 bytes) are input via the SI line.
Program operation will start immediately after the CE# is brought high, otherwise the PP instruction will not be
executed. The internal control logic automatically handles the programming voltages and timing. During a
program operation, all instructions will be ignored except the RDSR instruction. The progress or completion of
the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If
the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has
completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the
previously latched data are discarded, and the last 256 bytes are kept to be programmed into the page. The
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap
around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all
other bytes on the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s.
A byte cannot be reprogrammed without first erasing the whole sector or block.
Figure 8.8 Page Program Sequence
0
1
...
7
8
9
...
31
32
33
...
39
...
...
2079
Mode 3
2072
CE #
SCK
Mode 0
SI
SO
3-byte Address
Instruction = 02h
23
22
...
Data In 1
0
7
6
...
Data In 256
0
...
7
...
0
High Impedance
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
30
Pm25LQ512/010/020/040B
8.9 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h)
The Quad Input Page Program instruction allows up to 256 bytes data to be programmed into memory in a
single operation with four pins (IO0, IO1, IO2 and IO3). The destination of the memory to be programmed must
be outside the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits. A Quad Input
Page Program instruction which attempts to program into a page that is write-protected will be ignored. Before
the execution of Quad Input Page Program instruction, the QE bit in the Status Register must be set to “1” and
the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction.
The Quad Input Page Program instruction code, three address bytes and program data (1 to 256 bytes) are
input via the four pins (IO0, IO1, IO2 and IO3). Program operation will start immediately after the CE# is brought
high, otherwise the Quad Input Page Program instruction will not be executed. The internal control logic
automatically handles the programming voltages and timing. During a program operation, all instructions will be
ignored except the RDSR instruction. The progress or completion of the program operation can be determined
by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is
still in progress. If WIP bit is “0”, the program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the
previously latched data are discarded, and the last 256 bytes data are kept to be programmed into the page.
The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap
around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all
other bytes on the same page will remain unchanged.
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s.
A byte cannot be reprogrammed without first erasing the whole sector or block.
Figure 8.9 Quad Input Page Program Operation
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
...
31
32
33
34
35
SCK
Mode 0
Data In 1
3-byte Address
Data In 2
4
0
4
0
...
5
1
5
1
...
IO2
6
2
6
2
...
IO3
7
3
7
3
...
IO0
IO1
Instruction = 32h/38h
High Impedance
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
23
22
...
0
31
Pm25LQ512/010/020/040B
8.10 ERASE OPERATION
The memory array of the Pm25LQ512B is organized into uniform 4Kbyte sectors or 32Kbyte uniform blocks (a
block consists of eight adjacent sectors). The memory array of the Pm25LQ010/020/040B is organized into
uniform 4Kbyte sectors or 32/64Kbyte uniform blocks (a block consists of eight/sixteen adjacent sectors
respectively).
Before a byte is reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to
“1”). In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase
(BER) and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without
affecting the data in other sectors. A block erase operation erases any individual block. A chip erase operation
erases the whole memory array of a device. A sector erase, block erase or chip erase operation can be
executed prior to any programming operation.
8.11 SECTOR ERASE OPERATION (SER, D7h/20h)
A Sector Erase (SER) instruction erases a 4Kbyte sector. Before the execution of a SER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is reset automatically after
the completion of Sector Erase operation.
A SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire
instruction sequence. The SER instruction code, and three address bytes are input via SI. Erase operation will
start immediately after CE# is pulled high. The internal control logic automatically handles the erase voltage and
timing.
During an erase operation, all instruction will be ignored except the Read Status Register (RDSR) instruction.
The progress or completion of the erase operation can be determined by reading the WIP bit in the Status
Register using a RDSR instruction.
If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been
completed.
Figure 8.10 Sector Erase Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
1
0
SCK
Mode 0
3-byte Address
SI
SO
Instruction = D7h/20h
23
22
21
...
3
2
High Impedance
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
32
Pm25LQ512/010/020/040B
8.12 BLOCK ERASE OPERATION (BER32K:52h, BER64K:D8h)
A Block Erase (BER) instruction erases a 32/64Kbyte block. Before the execution of a BER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after
the completion of a block erase operation.
The BER instruction code and three address bytes are input via SI. Erase operation will start immediately after
the CE# is pulled high, otherwise the BER instruction will not be executed. The internal control logic
automatically handles the erase voltage and timing.
Figure 8.11 Block Erase (64K) Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
SCK
Mode 0
3-byte Address
SI
Instruction = D8h
23
22
21
...
3
2
1
0
8
9
10
...
28
29
30
31
1
0
High Impedance
SO
Figure 8.12 Block Erase (32K) Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
SI
SO
3-byte Address
Instruction = 52h
23
22
21
...
3
2
High Impedance
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
33
Pm25LQ512/010/020/040B
8.13 CHIP ERASE OPERATION (CER, C7h/60h)
A Chip Erase (CER) instruction erases the entire memory array. Before the execution of CER instruction, the
Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically
after completion of a chip erase operation.
The CER instruction code is input via the SI. Erase operation will start immediately after CE# is pulled high,
otherwise the CER instruction will not be executed. The internal control logic automatically handles the erase
voltage and timing.
Figure 8.13 Chip Erase Sequence
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
SI
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Instruction = C7h/60h
High Impedance
34
Pm25LQ512/010/020/040B
8.14 WRITE ENABLE OPERATION (WREN, 06h)
The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit is reset to
the write-protected state after power-up. The WEL bit must be write enabled before any write operation,
including Sector Erase, Block Erase, Chip Erase, Page Program, Write Status Register, and Write Function
Register operations. The WEL bit will be reset to the write-protected state automatically upon completion of a
write operation. The WREN instruction is required before any above operation is executed.
Figure 8.14 Write Enable Sequence
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
Address
Instruction = 06h
SI
High Impedance
SO
8.15 WRITE DISABLE OPERATION (WRDI, 04h)
The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI
instruction is not required after the execution of a write instruction, since the WEL bit is automatically reset.
Figure 8.15 Write Disable Sequence
CE#
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
SI
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Instruction = 04h
High Impedance
35
Pm25LQ512/010/020/040B
8.16 READ STATUS REGISTER OPERATION (RDSR, 05h)
The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a
program, erase or write Status Register operation, all other instructions will be ignored except the RDSR
instruction, which can be used to check the progress or completion of an operation by reading the WIP bit of
Status Register.
Figure 8.16 Read Status Register Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Mode 0
SI
Instruction = 05h
tV
Data Out
SO
7
6
5
1
2
3
4
0
8.17 WRITE STATUS REGISTER OPERATION (WRSR, 01h)
The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and
Status Register write protection features by writing “0”s or “1”s into the non-volatile BP3, BP2, BP1, BP0, and
SRWD bits. Also WRSR instruction allows the user to disable or enable quad operation by writing “0” or “1” into
the non-volatile QE bit.
Figure 8.17 Write Status Register Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2
1
0
SCK
Mode 0
Data In
SI
SO
Instruction = 01h
7
6
5
4
3
High Impedence
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
36
Pm25LQ512/010/020/040B
8.18 READ FUNCTION REGISTER OPERATION (RDFR, 48h)
The Read Function Register (RDFR) instruction provides access to the Function Register. Refer to Table 6.6
Function Register Bit Definition for more detail.
Figure 8.18 Read Function Register Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Mode 0
SI
Instruction = 48h
tV
Data Out
SO
7
6
5
1
2
3
4
0
8.19 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)
The Write Function Register (WRFR) instruction allows the user to lock the Information Row by bit 0. (IR Lock)
Figure 8.19 Write Function Register Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2
1
0
SCK
Mode 0
Data In
SI
SO
Instruction = 42h
7
6
5
4
3
High Impedence
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
37
Pm25LQ512/010/020/040B
8.20 PROGRAM/ERASE SUSPEND & RESUME
The device allows the interruption of Sector-Erase, Block-Erase or Page-Program operations to conduct other
operations. 75h/B0h command for suspend and 7Ah/30h for resume will be used. Function Register bit2 (PSUS)
and bit3 (ESUS) are used to check whether or not the device is in suspend mode.
Suspend to read ready timing: 100µs.
Resume to another suspend timing: 400µs (recommendation).
PROGRAM/ERASE SUSPEND DURING SECTOR-ERASE OR BLOCK-Erase (PERSUS 75h/B0h)
The Program/Erase Suspend allows the interruption of Sector Erase and Block Erase operations. After the
Program/Erase Suspend, WEL bit will be disabled, therefore only read related, resume and reset commands
can be accepted (Refer to Table 8.3 for more detail).
To execute the Program/Erase Suspend operation, the host drives CE# low, sends the Program/Erase Suspend
command cycle (75h/B0h), then drives CE# high. The Function Register indicates that the erase has been
suspended by changing the ESUS bit from “0” to “1”, but the device will not accept another command until it is
ready. To determine when the device will accept a new command, poll the WIP bit in the Status Register or wait
the specified time tSUS. When ESUS bit is issued, the Write Enable Latch (WEL) bit will be reset.
PROGRAM/ERASE SUSPEND DURING PAGE PROGRAMMING (PERSUS 75h/B0h)
The Program/Erase Suspend allows the interruption of all program operations. After the Program/Erase
Suspend command, WEL bit will be disabled, therefore only read related, resume and reset commands can be
accepted (Refer to Table 8.3 for more detail).
To execute the Program/Erase Suspend operation, the host drives CE# low, sends the Program/Erase Suspend
command cycle (75h/B0h), then drives CE# high. The Function Register indicates that the programming has
been suspended by changing the PSUS bit from “0” to “1”, but the device will not accept another command until
it is ready. To determine when the device will accept a new command, poll the WIP bit in the Status Register or
wait the specified time tSUS.
PROGRAM/ERASE RESUME (PERRSM 7Ah/30h)
The Program/Erase Resume restarts a Program or Erase command that was suspended, and changes the
suspend status bit in the Function Register (ESUS or PSUS bits) back to “0”. To execute the Program/Erase
Resume operation, the host drives CE# low, sends the Program/Erase Resume command cycle (7Ah/30h), then
drives CE# high. A cycle is two nibbles long, most significant nibble first. To determine if the internal, self-timed
Write operation completed, poll the WIP bit in the Status Register, or wait the specified time tSE, tBE or tPP for
Sector Erase, Block Erase, or Page Programming, respectively. The total write time before suspend and after
resume will not exceed the uninterrupted write times tSE, tBE or tPP.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
38
Pm25LQ512/010/020/040B
Table 8.3 Instructions accepted during Suspend
Operation
Suspended
Instruction Allowed
Name
Program or Erase
RD
Program or Erase
Program or Erase
Hex Code
Operation
03h
Read Data Bytes from Memory at Normal Read Mode
FR
0Bh
Read Data Bytes from Memory at Fast Read Mode
FRDIO
BBh
Fast Read Dual I/O
Program or Erase
FRDO
3Bh
Fast Read Dual Output
Program or Erase
FRQIO
EBh
Fast Read Quad I/O
Program or Erase
FRQO
6Bh
Fast Read Quad Output
Program or Erase
RDSR
05h
Read Status Register
Program or Erase
RDFR
48h
Read Function Register
Program or Erase
PERRSM
7Ah/30h
Resume program/erase
Program or Erase
RDID
ABh
Read Manufacturer and Product ID
Program or Erase
RDUID
4Bh
Read Unique ID Number
Program or Erase
RDJDID
9Fh
Read Manufacturer and Product ID by JEDEC ID Command
Program or Erase
RDMDID
90h
Read Manufacturer and Device ID
Program or Erase
RDSFDP
5Ah
SFDP Read
Program or Erase
RSTEN
66h
Software reset enable
Program or Erase
RST
99h
Reset (Only along with 66h)
Program or Erase
IRRD
68h
Read Information Row
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
39
Pm25LQ512/010/020/040B
8.21 DEEP POWER DOWN (DP, B9h)
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (enter
into Power-down mode), and the standby current is reduced from Isb1 to Isb2. During the Power-down mode, the
device is not active and all Write/Program/Erase instructions are ignored. The instruction is initiated by driving
the CE# pin low and shifting the instruction code “B9h” as show in the figure 8.20. The CE# pin must be driven
high after the instruction has been latched. If this is not done the Power-Down will not be executed. After CE#
pin driven high, the power-down state will be entered within the time duration of tDP. While in the power-down
state only the Release from Power-down/RDID instruction, which restores the device to normal operation, will be
recognized. All other instructions are ignored. This includes the Read Status Register instruction, which is
always available during normal operation. Ignoring all but one instruction makes the Power Down state a useful
condition for securing maximum write protection. It can support in SPI and Multi-IO mode.
Figure 8.20 Enter Deep Power Down Mode Operation. (SPI)
tDP
CE #
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
SI
Instruction = B9h
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
...
40
Pm25LQ512/010/020/040B
8.22 RELEASE DEEP POWER DOWN (RDPD, ABh)
The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. To release the device
from the deep power-down mode, the instruction is issued by driving the CE# pin low, shifting the instruction
code “ABh” and driving CE# high as shown in Figure 8.21.
Release from power-down will take the time duration of tRES1 before the device will resume normal operation
and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration.
If the Release from Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in process
(when WIP equals 1) the instruction is ignored and will not have any effects on the current cycle.
Figure 8.21 Release Power Down Sequence (SPI)
tRES1
CE #
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
SI
Instruction = ABh
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
...
41
Pm25LQ512/010/020/040B
8.23 READ PRODUCT IDENTIFICATION (RDID, ABh)
The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. It can support both SPI
and Multi-IO mode. The Read Product Identification (RDID) instruction is for reading out the old style of 8-bit
Electronic Signature, whose values are shown as table of Product Identification.
For Pm25LQ512/010/020B:
The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SI during the rising
SCK edge. Then the Device ID1 is shifted out on SO with the MSB first, each bit been shifted out during the
falling edge of SCK. The RDID instruction is ended by CE# going high. The Device ID1 outputs repeatedly if
additional clock cycles are continuously sent on SCK while CE# is at low.
For Pm25LQ040B:
The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SIO during the rising
edge of SCK. Then the first byte Manufacturer ID (9Dh) is shifted out on SO with the MSB first, followed by the
Device ID1 (7Eh) and the second byte Manufacturer ID (7Fh), each bit been shifted out during the falling edge
of SCK. If the CE# stays low after the last bit of second byte Manufacturer ID is shifted out, the Manufacturer
IDs and Device ID1 will be looping until the pulled high of CE# signal.
Table 8.4 Product Identification
Instruction (ABh, 90h, 9Fh)
Manufacturer ID
ISSI Serial Flash First Byte
ISSI Serial Flash Second Byte
Device Density
4Mb
2Mb
1Mb
512K
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Data
9Dh
7Fh
Device ID1
7Eh
11h
10h
05h
Device ID2
7Eh
42h
21h
20h
42
Pm25LQ512/010/020/040B
Figure 8.22 Read Product Identification Sequence
For Pm25LQ512/010/020B:
CE #
Mode 3
0
1
...
7
8
9
...
31
32
...
39
40
...
47
48
...
55
SCK
Mode 0
SI
Instruction = ABh
3 Dummy Bytes
tV
SO
Device ID1
Device ID1
Device ID1
For Pm25LQ040B:
CE #
Mode 3
0
1
...
7
8
9
...
31
32
...
39
40
...
47
48
...
55
SCK
Mode 0
SI
Instruction = ABh
3 Dummy Bytes
tV
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Manufacturer ID1
Device ID1
Manufacturer ID2
43
Pm25LQ512/010/020/040B
8.24 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh)
The JEDEC ID READ instruction allows the user to read the Manufacturer and Product ID of devices. Refer to
Table 8.4 Product Identification for Manufacturer ID and Device ID. After the JEDEC ID READ command is
input, the second byte Manufacturer ID (Manufacturer ID2) is shifted out on SO with the MSB first, followed by
the first byte Manufacturer ID (Manufacturer ID1) and the Device ID2, each bit shifted out during the falling edge
of SCK. If CE# stays low after the last bit of the Device ID2 is shifted out, the Manufacturer IDs and Device ID2
will loop until CE# is pulled high.
Figure 8.23 Read Product Identification by JEDEC ID READ Sequence
CE #
Mode 3
0
1
...
7
8
9
...
15
16
17
...
23
24
25
...
31
SCK
Mode 0
SI
Instruction = 9Fh
tV
SO
Manufacturer ID2
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Manufacturer ID1
Device ID2
44
Pm25LQ512/010/020/040B
8.25 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h)
The Read Device Manufacturer and Device ID (RDMDID) instruction allows the user to read the Manufacturer
and product ID of devices. Refer to Table 8.4 Product Identification for Manufacturer ID and Device ID. The
RDMDID command is input, followed by a 24-bit address (A23~A0) pointing to an ID table, each bit being
latched-in on SI during the rising edge of SCK. The table contains the first byte Manufacturer ID (Manufacturer
ID1), the second byte Manufacturing ID (Manufacturer ID2) and Device ID1. If A0 = 0 (A23-A1 bits are don’t
care), then Manufacturer ID1 is shifted out on SO with the MSB first, followed by Device ID1 and Manufacturer
ID2, each bit shifted out during the falling edge of SCK. If A0 = 1 (A23-A1 bits are don’t care), then Device ID1
will be read first, followed by Manufacturer ID1 and Manufacturing ID2. If CE# stays low after the last bit of
Manufacturer ID2 is shifted out, the Manufacturer IDs and Device ID1 will loop as the sequence determined by
A0 until CE# is pulled high.
Figure 8.24 Read Product Identification by RDMDID READ Sequence
CE #
Mode 3
0
1
...
7
8
9
...
31
32
...
39
40
...
47
48
...
55
SCK
Mode 0
SI
Instruction = 90h
3 Byte Address
tV
SO
Manufacturer ID1
Device ID1
Manufacturer ID2
Notes:
1. ADDRESS A0 = 0, will output Manufacture ID1 first Device ID1 next Manufacture ID2 next
ADDRESS A0 = 1, will output Device ID1 first Manufacture ID1 next Manufacture ID2 next
2. The Manufacture IDs and Device ID1 can be read continuously and will alternate between the three until CE# pin
is pulled high.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
45
Pm25LQ512/010/020/040B
8.26 READ UNIQUE ID NUMBER (RDUID, 4Bh)
The Read Unique ID Number (RDUID) instruction accesses a factory-set read-only 16-byte number that is
unique to the device. The ID number can be used in conjunction with user software methods to help prevent
copying or cloning of a system. The RDUID instruction is instated by driving the CE# pin low and shifting the
instruction code (4Bh) followed by 3 address bytes and a dummy byte. After which, the 16-byte ID is shifted out
on the falling edge of SCK as shown below.
Note: 16-byte of data will repeat as long as CE# is low and SCK is toggling.
Figure 8.25 Read Product Identification Sequence
CE #
Mode 3
0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
SCK
Mode 0
SI
Instruction = 4Bh
3 Byte Address
Dummy Byte
tV
SO
Data Out
A[23:16]
A[15:9]
A[8:4]
A[3:0]
XXh
XXh
00h
0h Byte address
XXh
XXh
00h
1h Byte address
XXh
XXh
00h
2h Byte address
XXh
XXh
00h
…
Table 8.5 Unique ID Addressing
XXh
XXh
00h
Fh Byte address
Note: XX means “don’t care”.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
46
Pm25LQ512/010/020/040B
8.27 READ SFDP OPERATION (RDSFDP, 5Ah)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the
functional and feature capabilities of serial Flash devices in a standard set of internal parameter tables. These
parameter tables can be interrogated by host system software to enable adjustments needed to accommodate
divergent features from multiple vendors. For more details please refer to the JEDEC Standard JESD216A
(Serial Flash Discoverable Parameters).
The sequence of issuing RDSFDP instruction is same as Fast Read instruction: CE# goes low send RDSFDP
instruction (5Ah) send 3 address bytes on SI pin send 1 dummy byte on SI pin read SFDP code on SO
to end RDSFDP operation can use CE# high at any time during data out. Refer to ISSI’s Application note for
SFDP table. The data at the addresses that are not specified in SFDP table are undefined.
Figure 8.26 RDSFDP COMMAND (Read SFDP) OPERATION
CE #
Mode 3
0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
SCK
Mode 0
SI
Instruction = 5Ah
3 Byte Address
Dummy Byte
tV
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Data Out
47
Pm25LQ512/010/020/040B
8.28 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)
The Reset operation is used as a system (software) reset that puts the device in normal operating mode. This
operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST). The Reset operation requires
the Reset-Enable command followed by the Reset command. Any command other than the Reset command
after the Reset-Enable command will disable the Reset-Enable.
Execute the CE# pin low sends the Reset-Enable command (66h), and drives CE# high. Next, the host drives
CE# low again, sends the Reset command (99h), and drives CE# high.
The Software Reset during an active Program or Erase operation aborts the operation, which can result in
corrupting or losing the data of the targeted address range. Depending on the prior operation, the reset timing
may vary. Recovery from a Write operation requires more latency time than recovery from other operations.
Note: The Status and Function Registers remain unaffected.
Figure 8.27 SOFTWARE RESET ENABLE, SOFTWARE RESET OPERATIONS (RSTEN, 66h + RST, 99h)
CE#
Mode 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Mode 0
SI
Instruction = 66h
Instruction = 99h
High Impedance
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
48
Pm25LQ512/010/020/040B
8.29 SECURITY INFORMATION ROW (OTP AREA)
The security Information Row is comprised of an additional 4 x 256 bytes of programmable information. The
security bits can be reprogrammed by the user. Any program security instruction issued while program cycle is
in progress is rejected without having any effect on the cycle that is in progress.
Table 8.6 Information Row Valid Address Range
Address Assignment
IRL0 (Information Row Lock0)
IRL1
IRL2
IRL3
A[23:16]
00h
00h
00h
00h
A[15:8]
00h
10h
20h
30h
A[7:0]
Byte address
Byte address
Byte address
Byte address
Bit 7~4 of the Function Register is used to permanently lock the programmable memory array.
-When Function Register bit IRLx = “0”, the 256 bytes of the programmable memory array can be programmed.
-When Function Register bit IRLx = “1”, the 256 bytes of the programmable memory array function as read only.
8.30 INFORMATION ROW PROGRAM OPERATION (IRP, 62h)
The Information Row Program (IRP) instruction allows up to 256 bytes data to be programmed into the memory
in a single operation. Before the execution of IRP instruction, the Write Enable Latch (WEL) must be enabled
through a Write Enable (WREN) instruction.
The IRP instruction code, three address bytes and program data (1 to 256 bytes) should be sequentially input
via the SI line. Three address bytes has to be input as specified in the Table 8.6 Information Row Valid Address
Range. Program operation will start once the CE# goes high, otherwise the IRP instruction will not be executed.
The internal control logic automatically handles the programming voltages and timing. During a program
operation, all instructions will be ignored except the RDSR instruction. The progress or completion of the
program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the
WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed.
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page. The
previously latched data are discarded and the last 256 bytes data are kept to be programmed into the page. The
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap
around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all
other bytes on the same page will remain unchanged.
Note: Information Row is only One Time Programmable (OTP). Once an Information Row is programmed, the data
cannot be altered.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
49
Pm25LQ512/010/020/040B
Figure 8.28 IRP COMMAND (Information Row Program) OPERATION
0
1
...
7
8
9
...
31
32
33
...
39
...
...
2079
Mode 3
2072
CE #
SCK
Mode 0
SI
SO
3-byte Address
Instruction = 62h
23
22
...
Data In 1
0
7
6
...
Data In 256
0
...
7
...
0
High Impedance
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
50
Pm25LQ512/010/020/040B
8.31 INFORMATION ROW READ OPERATION (IRRD, 68h)
The IRRD instruction is used to read memory data at up to a 104MHZ clock.
The IRRD instruction code is followed by three address bytes (A23 - A0) and a dummy byte (8 clocks),
transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data byte
addressed is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling
edge of SCK.
The address is automatically incremented by one after each byte of data is shifted out. Once the address
reaches the last address of each 256 byte Information Row, the next address will not be valid and the data of
the address will be garbage data. It is recommended to repeat four times IRRD operation that reads 256 byte
with a valid starting address of each Information Row in order to read all data in the 4 x 256 byte Information
Row array. The IRRD instruction is terminated by driving CE# high (VIH).
If a IRRD instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is
ignored and will not have any effects on the current cycle
Figure 8.29 IRRD COMMAND (Information Row Read) OPERATION
CE #
Mode 3
0
1
...
7
8
9
...
31
32
33
...
39
40
41
...
47
SCK
Mode 0
SI
Instruction = 68h
3 Byte Address
Dummy Byte
tV
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Data Out
51
Pm25LQ512/010/020/040B
8.32 SECTOR LOCK/UNLOCK FUNCTIONS
SECTOR UNLOCK OPERATION (SECUNLOCK, 26h)
The Sector Unlock command allows the user to select a specific sector to allow program and erase operations.
This instruction is effective when the blocks are designated as write-protected through the BP0, BP1, BP2, and
BP3 bits in the Status Register. Only one sector can be enabled at any time. If many SECUNLOCK commands
are input, only the last sector designated by the last SECUNLOCK command will be unlocked. The instruction
code is followed by a 24-bit address specifying the target sector, but A0 through A11 are not decoded. The
remaining sectors within the same block remain as read-only.
Figure 8.59 Sector Unlock Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
1
0
SCK
Mode 0
3-byte Address
SI
SO
Instruction = 26h
23
22
21
...
3
2
High Impedance
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
52
Pm25LQ512/010/020/040B
SECTOR LOCK OPERATION (SECLOCK, 24h)
The Sector Lock command relocks a sector that was previously unlocked by the Sector Unlock command. The
instruction code does not require an address to be specified, as only one sector can be enabled at a time. The
remaining sectors within the same block remain in read-only mode.
Figure 8.60 Sector Lock Sequence
CE #
Mode 3
0
1
2
3
4
5
6
7
SCK
Mode 0
SI
SO
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Instruction = 24h
High Impedance
53
Pm25LQ512/010/020/040B
9. ELECTRICAL CHARACTERISTICS
9.1 ABSOLUTE MAXIMUM RATINGS (1)
o
Storage Temperature
o
-65 C to +150 C
Surface Mount Lead Soldering Temperature
Standard Package
240oC 3 Seconds
Lead-free Package
260oC 3 Seconds
Input Voltage with Respect to Ground on All Pins
-0.5V to VCC + 0.5V
All Output Voltage with Respect to Ground
-0.5V to VCC + 0.5V
VCC
-0.5V to +6.0V
Note:
1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
9.2 OPERATING RANGE
Part Number
Pm25LQ512/010/020/040B
Operating Temperature
-40°C to 85°C
VCC Power Supply
2.3V (VMIN) – 3.6V (VMAX); 3.3V (Typ)
9.3 DC CHARACTERISTICS
(Under operating range)
Symbol
Max
Units
VCC Active Read Current
VCC = VMAX at 33MHz, SO = Open
10
15
mA
ICC2
VCC Program/Erase Current
VCC = VMAX at 33MHz, SO = Open
15
30
mA
ISB1
VCC Standby Current CMOS
VCC = VMAX, CE# = VCC
8
50
µA
ISB2
Deep power down current
VCC = VMAX, CE# = VCC
5
20
µA
ILI
Input Leakage Current
VIN = 0V to VCC
1
µA
Output Leakage Current
VIN = 0V to VCC
1
µA
-0.5
0.3VCC
V
0.7VCC
VCC + 0.3
V
0.2
V
VIL
(1)
Input Low Voltage
VIH
(1)
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
Condition
VMIN < VCC < VMAX
Min
Typ(2)
ICC1
ILO
Parameter
IOL = 100 µA
IOH = -100 µA
VCC - 0.2
V
Notes:
1. Maximum DC voltage on input or I/O pins is VCC + 0.5V. During voltage transitions, input or I/O pins may
overshoot VCC by +2.0V for a period of time not to exceed 20ns. Minimum DC voltage on input or I/O pins is -0.5V.
During voltage transitions, input or I/O pins may undershoot GND by -2.0V for a period of time not to exceed 20ns.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at
VCC = VCC (Typ), TA=25°C.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
54
Pm25LQ512/010/020/040B
9.4 AC MEASUREMENT CONDITIONS
Symbol
Parameter
Min
Max
Units
CL
Load Capacitance
30
pF
TR,TF
Input Rise and Fall Times
5
ns
VIN
Input Pulse Voltages
0.2VCC to 0.8VCC
V
VREFI
Input Timing Reference Voltages
0.3VCC to 0.7VCC
V
VREFO
Output Timing Reference Voltages
0.5VCC
V
Figure9.1 Output test load & AC measurement I/O Waveform
0.8VCC
Input
1.8k
VCC/2
AC
Measurement
Level
0.2VCC
OUTPUT PIN
1.2k
30pf
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
55
Pm25LQ512/010/020/040B
9.5 AC CHARACTERISTICS
(Under operating range, refer to section 9.4 for AC measurement conditions)
Symbol
Parameter
fCT
fC
tRI
tFI
tCKH
tCKL
tCEH
tCS
tCH
tDS
tDH
tHS
tHD
tV
tOH
tDIS
tHLCH
tCHHH
tHHCH
tCHHL
tLZ
tHZ
Clock Frequency for fast read mode
Clock Frequency for read mode
Input Rise Time
Input Fall Time
SCK High Time
SCK Low Time
CE# High Time
CE# Setup Time
CE# Hold Time
Data In Setup Time
Data in Hold Time
Hold Setup Time
Hold Time
Output Valid
Output Hold Time
Output Disable Time
HOLD Active Setup Time relative to SCK
HOLD Active Hold Time relative to SCK
HOLD Not Active Setup Time relative to SCK
HOLD Not Active Hold Time relative to SCK
HOLD to Output Low Z
HOLD to Output High Z
Sector Erase Time (4Kbyte)
Block Erase Time (32Kbyte)
Block Erase time (64Kbyte)(1)
tEC
Chip Erase Time
tPP
tres1
tDP
tW
tSUS
tSRST
Min
512Kb
1Mb
2Mb
4Mb
Page Program Time
Release deep power down
Deep power down
Write Status Register time
Suspend to read ready
Software Reset cover time
Typ
0
0
Max
Units
104
33
8
8
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
4
4
7
10
5
2
2
15
15
8
2
8
5
5
5
5
70
130
200
0.25
0.4
0.75
1.5
0.5
2
12
12
300
500
1000
1
1.5
2
3
1
3
3
10
100
100
s
ms
µs
µs
ms
µs
µs
Note1: 64Kbyte Block Erase time is not applicable to Pm25LQ512B.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
56
Pm25LQ512/010/020/040B
9.6 SERIAL INPUT/OUTPUT TIMING
Figure 9.2 SERIAL INPUT/OUTPUT TIMING (1)
tCEH
CE#
tCH
tCS
tCKH
SCK
tDS
SI
tCKL
tDH
VALID IN
VALID IN
tV
SO
HI-Z
tOH
VALID OUTPUT
tDIS
HI-Z
Note1: For SPI Mode 0 (0,0)
Figure 9.3 HOLD TIMING
CE#
tHLCH
tCHHL
tHHCH
SCK
tCHHH
tHZ
tLZ
SO
SI
HOLD#
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
57
Pm25LQ512/010/020/040B
9.7 POWER-UP AND POWER-DOWN
At Power-up and Power-down, the device must be NOT SELECTED until Vcc reaches at the right level. (Adding
a simple pull-up resistor on CE# is recommended.)
Power up timing
VCC
VCC(max)
All Write Commands are Rejected
Chip Selection Not Allowed
VCC(min)
Reset State
tVCE
Read Access Allowed
V(write inhibit)
Device fully
accessible
tPUW
Symbol
Parameter
Min.
(1)
Vcc(min) to CE# Low
1
(1)
Power-up time delay to write instruction
1
tVCE
tPUW
VWI(1)
Write Inhibit Voltage
Max
Unit
ms
10
ms
2.1
V
Note1: These parameters are characterized and are not 100% tested.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
58
Pm25LQ512/010/020/040B
9.8 PROGRAM/ERASE PERFORMANCE
Typ
Max
Unit
Sector Erase Time (4KB)
70
300
ms
Block Erase Time (32KB)
130
500
ms
Block Erase Time (64KB)
200
1000
ms
0.25
1
1Mb
0.4
1.5
2Mb
0.75
2
4Mb
1.5
3
0.5
1
ms
8
25
µs
Parameter
512Kb
Chip Erase Time
Page Programming Time
Byte Program
Remarks
From writing erase command to erase
completion
s
From writing program command to
program completion
Note: These parameters are characterized and are not 100% tested.
9.9 RELIABILITY CHARACTERISTICS
Parameter
Min
Unit
Test Method
Endurance
100,000
Cycles
JEDEC Standard A117
Data Retention
20
Years
JEDEC Standard A103
ESD – Human Body Model
2,000
Volts
JEDEC Standard A114
ESD – Machine Model
200
Volts
JEDEC Standard A115
Latch-Up
100 + ICC1
mA
JEDEC Standard 78
Note: These parameters are characterized and are not 100% tested.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
59
Pm25LQ512/010/020/040B
10. PACKAGE TYPE INFORMATION
10.1 8-PIN JEDEC 150MIL BROAD SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) PACKAGE (S)
Note: All dimensions are in millimeters. Lead co-planarity is 0.08mm.
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
60
Pm25LQ512/010/020/040B
10.2 8-PIN 150MIL TSSOP PACKAGE (D)
Note: All dimensions are in millimeters. Lead co-planarity is 0.08mm
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
61
Pm25LQ512/010/020/040B
11. ORDERING INFORMATION
Pm25LQ040B
-
S
C
E
ENVIRONMENTAL ATTRIBUTE
E = Lead-free (Pb-free) and Halogen-free package
TEMPERATURE RANGE
C = -40°C to +85°C
PACKAGE TYPE
S = 8-pin SOIC 150mm
D = 8-pin TSSOP 150mil
DIE REVISION
B = Revision B
DENSITY
040 = 4 Mbit
020 = 2 Mbit
010 = 1 Mbit
512 = 512 Kbit
BASE PART NUMBER
Pm = pFLASH
25LQ = FLASH, 2.3V ~ 3.6V, Quad SPI
Density
Frequency (MHz)
4Mb
2Mb
104
1Mb
512K
Order Part Number
Package
Pm25LQ040B-SCE
8-pin SOIC 150mil
Pm25LQ020B-SCE
8-pin SOIC 150mil
Pm25LQ020B-DCE
8-pin TSSOP 150mil
Pm25LQ010B-SCE
8-pin SOIC 150mil
Pm25LQ010B-DCE
8-pin TSSOP 150mil
Pm25LQ512B-SCE
8-pin SOIC 150mil
Pm25LQ512B-DCE
8-pin TSSOP 150mil
Integrated Silicon Solution, Inc.- www.issi.com
Rev.A
02/12/2015
Temp Range
-40°C to +85°C
62
工商网监
湘ICP备2023018690号
