10N60C5M

Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge G D TO-220 ABFP G D S S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 3.4 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 5.4 3.7 225 0.3 50 V V A A mJ mJ V/ns Features • Fast CoolMOS power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) • Fully isolated package Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter CoolMOS is a trademark of Infineon Technologies AG. MOSFET dV/dt ruggedness VDS = 0...480 V Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. 350 2.5 TVJ = 25°C TVJ = 125°C 3 tbd 100 790 38 17 4 6 tbd tbd tbd tbd 3.95 22 max. 385 3.5 1 mΩ V µA µA nA pF pF nC nC nC ns ns ns ns K/W RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC VGS = 10 V; ID = 5.2 A VDS = VGS; ID = 0.34 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A VGS = 10 V; VDS = 400 V ID = 5.2 A; RG = 4.3 Ω IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1-4 0649 Advanced Technical Information IXKP 10N60C5M Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. IS VSD trr QRM IRM VGS = 0 V IF = 5.2 A; VGS = 0 V IF = 5.2 A; -diF/dt = 100 A/µs; VR = 400 V 0.9 260 21 24 typ. max. 5.2 1.2 A V ns µC A Component Symbol TVJ Tstg Md Symbol Conditions operating mounting torque Conditions Maximum Ratings -40...+150 -40...+150 0.4 ... 0.6 °C °C Nm Characteristic Values min. typ. 0.50 80 2 max. K/W K/W g RthCH RthJA Weight with heatsink compound thermal resistance junction - ambient IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 2-4 0649 Advanced Technical Information IXKP 10N60C5M TO-220 ABFP Outline ØP E A A1 H Q D L1 A2 L b1 e b c 35 25 16 TJ = 25°C 30 20 V 10 V 8V 7V TJ = 150°C 14 10 V 8V 7V 6V 5.5 V 20 25 VGS = 6V 12 VGS = 20 V 20 Ptot [ W] 15 10 I D [A ] I D [A ] 8 15 5.5 V 5V 10 6 5V 10 4.5 V 4 5 5 4.5 V 2 0 0 40 80 TC [°C] 120 160 0 0 5 10 15 20 0 0 5 10 15 20 V DS [V] V DS [V] Fig. 1 Power dissipation Fig. 2 Typ. output characteristics Fig. 3 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 3-4 0649 Advanced Technical Information IXKP 10N60C5M 40 1.6 6V 6.5 V 7V 1.2 VDS = 5V 5.5 V ID = 5.2 A VGS = 10 V 1 VDS > 2·RDS(on) max · ID 36 32 28 25 °C 1.2 TJV = 150°C 20 V 0.8 [Ω] [Ω] 24 0.6 98 % DS (on) 0.8 DS (on) I D [A ] 20 16 150 °C R R TJ = 0.4 typ 12 0.4 0.2 8 4 0 0 5 10 15 20 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 I D [A] T j [°C] V GS [V] Fig. 3 Typ. drain-source on-state resistance characteristics of IGBT 10 2 Fig. 4 Drain-source on-state resistance Fig. 5 Typ. transfer characteristics 10 10 5 ID = 5.2 A pulsed 9 8 10 4 VGS = 0 V f = 1 MHz 10 1 TJ = 150 °C 25 °C 150 °C, 98% VDS =120 V 7 6 400 V 10 3 Ciss [V ] V GS 5 4 C [pF ] 10 2 I F [A ] 10 0 Coss 25 °C, 98% 3 2 1 10 1 Crss 10 -1 0 0 0.5 1 1.5 2 10 0 0 5 10 15 20 0 50 100 150 200 V SD [V] Q gate [nC] V DS [V] Fig. 6 Forward characteristic of reverse diode 250 Fig. 7 Typ. gate charge Fig. 8 Typ. capacitances 700 ID = 3.4 A ID = 0.25 mA 200 660 [m J ] B R (DS S ) [V ] 620 150 E AS 100 V 580 540 20 60 100 140 180 50 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] Fig. 9 Avalanche energy Fig. 10 Drain-source breakdown voltage 0649 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 4-4