6N100F

Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS IXFT 6N100F ID25 RDS(on) = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 1000 1000 ± 20 ± 30 6 24 6 20 500 15 180 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ mJ V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) 1.13/10 Nm/lb.in. 6 4 g g Features ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications DC-DC converters ● Switched-mode and resonant-mode power supplies, >500kHz switching ● DC choppers ● 13.5 MHz industrial applications ● Pulse generation ● Laser drivers ● RF amplifiers ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±100 nA TJ = 125°C 50 µA 1 mA 1.9 Ω VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500uA VDS = VGS, ID = 2.5 mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 Note 1 Advantages ● Space savings ● High power density © 2002 IXYS All rights reserved 98732B (9/02) IXFH 6N100F IXFT 6N100F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 3 5.5 1770 VGS = 0 V, VDS = 25 V, f = 1 MHz 186 53 11 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2.0 Ω (External), 8.6 21 8.3 54 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 14 27 0.65 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 20 V; ID = 0.5 • ID25 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 24 1.5 250 A A V ns µC A TO-268 Outline IF = IS,-di/dt = 100 A/µs, VR = 100 V 0.6 4 Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Min Recommended Footprint Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFH 6N100F IXFT 6N100F Fig. 1. Output Characteristics at 25oC 12 TJ = 25OC VGS = 10V 9V 8V 7V 6V Fig. 2. Output Characteristics at 125oC 8 TJ = 125OC VGS = 10V 9V 8V 7V 6V 10 6 ID - Amperes 8 6 4 2 0 ID - Amperes 4 5V 2 5V 0 0 5 10 15 20 0 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 3. RDS(ON) vs. Drain Current 4 VGS = 10V Fig. 4. RDS(ON) vs. TJ 3.0 2.5 2.0 1.5 1.0 0.5 0.0 I D = 3A VGS = 10V RDS(ON) - Normalized 3 TJ = 125OC RDS(ON) - Normalized I D = 6A 2 T J = 25 C O 1 0 0 2 4 6 8 10 12 -25 0 25 50 75 100 125 150 ID - Amperes T J - Degrees C Fig. 5. Drain Current vs. Case Temperature 8 Fig. 6. Admittance Curves 6 6 ID - Amperes ID - Amperes 4 TJ = 125oC 4 2 2 TJ = 25oC TJ = -40oC 0 -50 -25 0 25 50 75 100 125 150 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 T C - Degrees C VGS - Volts © 2002 IXYS All rights reserved IXFH 6N100F IXFT 6N100F Fig. 7. Gate Charge Characteristic Curve 10 VDS = 500V Fig. 8. Capacitance Curves 2000 Ciss 8 ID = 3A IG = 10mA 6 Capacitance - pF VGE - Volts 1000 700 500 400 300 200 100 70 50 40 0 5 f = 1MHz Coss 4 2 Crss 0 0 10 20 30 40 50 10 15 20 25 30 35 40 Qg - nanocoulombs VDS - Volts Fig. 9. Source Current vs. Source to Drain Voltage 18 16 14 ID - Amperes 12 10 8 6 4 2 0 0.2 TJ = 125 C O TJ = 125oC TJ = 25oC TJ = 25OC 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig. 10. Thermal Impedance 1 D=0.5 D=0.2 ZthJC (K/W) 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1